Suchergebnisse für "30n60" : > 120

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IKW30N60H3FKSA1 IKW30N60H3FKSA1 Infineon Technologies Infineon_IKW30N60H3_DataSheet_v02_02_EN-3362119.pdf IGBT Transistors 600V 30A 187W
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.98 EUR
10+ 7.2 EUR
25+ 5.8 EUR
100+ 5.15 EUR
240+ 5.12 EUR
480+ 4.55 EUR
1200+ 4.19 EUR
Mindestbestellmenge: 7
IKW30N60H3FKSA1 IKW30N60H3FKSA1 Infineon Technologies infineon-ikw30n60h3-datasheet-v02_02-en.pdf Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60H3FKSA1 IKW30N60H3FKSA1 Infineon Technologies IKW30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc80c5f041c9 Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 247 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.03 EUR
30+ 6.36 EUR
120+ 5.45 EUR
Mindestbestellmenge: 4
IKW30N60T IKW30N60T Infineon Technologies Infineon_IKW30N60T_DataSheet_v02_06_EN-3362343.pdf IGBT Transistors LOW LOSS DuoPack 600V 30A
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.63 EUR
10+ 8.94 EUR
25+ 8.45 EUR
100+ 7.23 EUR
240+ 6.79 EUR
480+ 6.4 EUR
1200+ 5.49 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 IKW30N60TFKSA1 INFINEON TECHNOLOGIES IKW30N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IKW30N60TFKSA1 Infineon IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d 45A; 600V; 187W; IGBT w/ Diode   IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
5+13.2 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 IKW30N60TFKSA1 Infineon Technologies infineon-ikw30n60t-datasheet-v02_06-en.pdf Trans IGBT Chip N-CH 600V 45A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60TFKSA1 IKW30N60TFKSA1 Infineon Technologies Infineon_IKW30N60T_DataSheet_v02_06_EN-3362343.pdf IGBT Transistors LOW LOSS DuoPack 600V 30A
auf Bestellung 1374 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.63 EUR
10+ 10.14 EUR
25+ 8.14 EUR
100+ 7.07 EUR
480+ 5.49 EUR
1200+ 5.17 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 IKW30N60TFKSA1 Infineon Technologies IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 2094 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.71 EUR
30+ 8.48 EUR
120+ 7.27 EUR
510+ 6.46 EUR
1020+ 5.53 EUR
2010+ 5.21 EUR
Mindestbestellmenge: 3
IXFH30N60P IXFH30N60P IXYS media-3323679.pdf MOSFET 600V 30A
auf Bestellung 1800 Stücke:
Lieferzeit 336-350 Tag (e)
3+25.4 EUR
30+ 20.25 EUR
Mindestbestellmenge: 3
IXFH30N60X IXFH30N60X IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n60x_1of2_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.86 EUR
30+ 15.86 EUR
Mindestbestellmenge: 2
IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.03 EUR
7+ 10.94 EUR
Mindestbestellmenge: 5
IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.03 EUR
7+ 10.94 EUR
Mindestbestellmenge: 5
IXGH30N60C3 IXYS/Littelfuse littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf.pdf Транзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
2+4.9 EUR
10+ 4.22 EUR
100+ 3.71 EUR
Mindestbestellmenge: 2
IXGH30N60C3D1 IXGH30N60C3D1 IXYS media-3322335.pdf IGBT Modules High Frequency Range 40khz C-IGBT w/Diod
auf Bestellung 489 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.11 EUR
10+ 14.09 EUR
30+ 13.65 EUR
Mindestbestellmenge: 4
IXGH30N60C3D1 IXGH30N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 2329 Stücke:
Lieferzeit 21-28 Tag (e)
2+19.84 EUR
30+ 15.83 EUR
120+ 14.17 EUR
510+ 12.5 EUR
1020+ 11.25 EUR
2010+ 10.54 EUR
Mindestbestellmenge: 2
IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTH30N60L2 IXTH30N60L2 IXYS media-3323906.pdf MOSFET 30 Amps 600V
auf Bestellung 1016 Stücke:
Lieferzeit 14-28 Tag (e)
2+47.89 EUR
30+ 40.25 EUR
60+ 38.79 EUR
120+ 36.5 EUR
270+ 34.84 EUR
Mindestbestellmenge: 2
IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.98 EUR
9+ 8.18 EUR
Mindestbestellmenge: 6
IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.98 EUR
9+ 8.18 EUR
Mindestbestellmenge: 6
IXTH30N60P IXTH30N60P IXYS media-3323016.pdf MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 655 Stücke:
Lieferzeit 14-28 Tag (e)
3+25.19 EUR
10+ 23.92 EUR
30+ 19.94 EUR
120+ 17.97 EUR
270+ 17.68 EUR
510+ 15.86 EUR
1020+ 14.64 EUR
Mindestbestellmenge: 3
IXTH30N60P IXTH30N60P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.38 EUR
30+ 20.24 EUR
120+ 18.11 EUR
510+ 15.98 EUR
Mindestbestellmenge: 2
IXTQ30N60L2 IXTQ30N60L2 IXYS media-3323906.pdf MOSFET 30 Amps 600V
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
2+45.06 EUR
10+ 39.7 EUR
30+ 35.85 EUR
60+ 34.61 EUR
120+ 32.66 EUR
270+ 32.55 EUR
Mindestbestellmenge: 2
IXTQ30N60L2 IXTQ30N60L2 IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 260 Stücke:
Lieferzeit 21-28 Tag (e)
1+45.34 EUR
30+ 36.72 EUR
120+ 34.56 EUR
IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.41 EUR
9+ 8.18 EUR
10+ 7.74 EUR
Mindestbestellmenge: 7
IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.41 EUR
9+ 8.18 EUR
10+ 7.74 EUR
Mindestbestellmenge: 7
IXTQ30N60P IXTQ30N60P IXYS media-3323016.pdf MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 260 Stücke:
Lieferzeit 14-28 Tag (e)
3+23.89 EUR
10+ 20.49 EUR
30+ 18.56 EUR
120+ 17.06 EUR
270+ 15.03 EUR
510+ 14.64 EUR
1020+ 13.86 EUR
Mindestbestellmenge: 3
IXTT30N60L2 IXTT30N60L2 IXYS media-3323906.pdf MOSFET 30 Amps 600V
auf Bestellung 525 Stücke:
Lieferzeit 336-350 Tag (e)
2+50.05 EUR
10+ 50.02 EUR
30+ 50 EUR
Mindestbestellmenge: 2
IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.32 EUR
10+ 7.55 EUR
11+ 7.14 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.32 EUR
10+ 7.55 EUR
11+ 7.14 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1 IXXH30N60B3D1 IXYS media-3321928.pdf IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 194 Stücke:
Lieferzeit 14-28 Tag (e)
3+21.76 EUR
10+ 20.2 EUR
30+ 17.13 EUR
120+ 15.55 EUR
270+ 15.08 EUR
510+ 13.23 EUR
1020+ 11.75 EUR
Mindestbestellmenge: 3
IXXH30N60B3D1 IXXH30N60B3D1 IXYS littelfuse_discrete_igbts_xpt_ixxh30n60b3d1_datasheet.pdf.pdf Description: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 1372 Stücke:
Lieferzeit 21-28 Tag (e)
2+21.92 EUR
30+ 17.5 EUR
120+ 15.66 EUR
510+ 13.81 EUR
1020+ 12.43 EUR
Mindestbestellmenge: 2
IXXH30N60C3D1 IXXH30N60C3D1 IXYS media-3320805.pdf IGBT Transistors XPT 600V IGBT 30A
auf Bestellung 181 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.17 EUR
10+ 14.92 EUR
30+ 13.52 EUR
120+ 12.4 EUR
270+ 11.67 EUR
510+ 10.43 EUR
1020+ 9.91 EUR
Mindestbestellmenge: 4
IXXH30N60C3D1 IXXH30N60C3D1 IXYS littelfuse_discrete_igbts_xpt_ixxh30n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
2+17.5 EUR
30+ 13.97 EUR
120+ 12.5 EUR
Mindestbestellmenge: 2
IXXQ30N60B3M IXXQ30N60B3M IXYS littelfuse_discrete_igbts_xpt_ixxq30n60b3m_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
auf Bestellung 960 Stücke:
Lieferzeit 21-28 Tag (e)
2+13 EUR
10+ 10.91 EUR
100+ 8.82 EUR
500+ 7.84 EUR
Mindestbestellmenge: 2
MGY30N60D onsemi ROCELEC_mgy30n60d.rev0.pdf?t.download=true&u=ovmfp3 Description: TRANS IGBT CHIP N-CH 600V 50A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 3094 Stücke:
Lieferzeit 21-28 Tag (e)
94+7.79 EUR
Mindestbestellmenge: 94
NGTB30N60FWG NGTB30N60FWG onsemi NGTB30N60FWG.pdf Description: IGBT 600V 60A 167W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 81ns/190ns
Switching Energy: 650µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 167 W
auf Bestellung 7834 Stücke:
Lieferzeit 21-28 Tag (e)
113+6.5 EUR
Mindestbestellmenge: 113
NGTB30N60IHLWG NGTB30N60IHLWG onsemi ngtb30n60ihlw-d.pdf Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
auf Bestellung 5700 Stücke:
Lieferzeit 21-28 Tag (e)
129+5.7 EUR
Mindestbestellmenge: 129
NGTB30N60L2WG NGTB30N60L2WG onsemi ngtb30n60l2wg-d.pdf Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
auf Bestellung 46 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.28 EUR
10+ 9.46 EUR
Mindestbestellmenge: 3
NGTB30N60SWG NGTB30N60SWG onsemi NGTB30N60SWG.pdf Description: IGBT 600V 60A 189W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 57ns/109ns
Switching Energy: 750µJ (on), 540µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 189 W
auf Bestellung 1873 Stücke:
Lieferzeit 21-28 Tag (e)
127+5.77 EUR
Mindestbestellmenge: 127
NGTG30N60FLWG NGTG30N60FLWG onsemi ngtg30n60flw-d.pdf Description: IGBT 600V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 83ns/170ns
Switching Energy: 700µJ (on), 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
auf Bestellung 8660 Stücke:
Lieferzeit 21-28 Tag (e)
143+5.14 EUR
Mindestbestellmenge: 143
SGW30N60FKSA1 SGW30N60FKSA1 Infineon Technologies SGx30N60.pdf Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
auf Bestellung 332 Stücke:
Lieferzeit 21-28 Tag (e)
77+9.54 EUR
Mindestbestellmenge: 77
SIHB30N60E-GE3 SIHB30N60E-GE3 Vishay Semiconductors sihb30n60e.pdf MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1289 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.09 EUR
10+ 12.22 EUR
25+ 11.15 EUR
100+ 9.54 EUR
250+ 9.23 EUR
500+ 8.48 EUR
1000+ 7.33 EUR
Mindestbestellmenge: 4
SIHB30N60E-GE3 SIHB30N60E-GE3 Vishay Siliconix sihb30n60e.pdf Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1108 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.2 EUR
50+ 11.26 EUR
100+ 9.65 EUR
500+ 8.58 EUR
1000+ 7.34 EUR
Mindestbestellmenge: 2
SIHB30N60ET1-GE3 SIHB30N60ET1-GE3 Vishay Siliconix sihb30n60e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1182 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.2 EUR
10+ 11.93 EUR
100+ 9.65 EUR
Mindestbestellmenge: 2
SIHB30N60ET5-GE3 SIHB30N60ET5-GE3 Vishay Siliconix sihb30n60e.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+8.58 EUR
Mindestbestellmenge: 800
SIHB30N60ET5-GE3 SIHB30N60ET5-GE3 Vishay Siliconix sihb30n60e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.2 EUR
10+ 11.93 EUR
100+ 9.65 EUR
Mindestbestellmenge: 2
SIHF30N60E-GE3 SIHF30N60E-GE3 Vishay Semiconductors sihf30n60e.pdf MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 1380 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.25 EUR
10+ 11.96 EUR
25+ 9.72 EUR
100+ 8.68 EUR
250+ 8.61 EUR
1000+ 7.51 EUR
Mindestbestellmenge: 4
SIHF30N60E-GE3 SIHF30N60E-GE3 Vishay Siliconix sihf30n60e.pdf Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 2973 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.33 EUR
10+ 12.04 EUR
100+ 9.74 EUR
500+ 8.65 EUR
1000+ 7.41 EUR
2000+ 6.98 EUR
Mindestbestellmenge: 2
SIHG30N60E-GE3 SIHG30N60E-GE3 Vishay / Siliconix sihg30n60e.pdf MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 1380 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.25 EUR
10+ 10.5 EUR
25+ 10.06 EUR
100+ 8.81 EUR
250+ 8.63 EUR
500+ 8.14 EUR
1000+ 7.88 EUR
Mindestbestellmenge: 5
SIHG30N60E-GE3 SIHG30N60E-GE3 Vishay Siliconix sihg30n60e.pdf Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 477 Stücke:
Lieferzeit 21-28 Tag (e)
2+15 EUR
10+ 12.58 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
SiHP30N60E-E3 SiHP30N60E-E3 Vishay / Siliconix sihp30n60e.pdf MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 3992 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.94 EUR
10+ 11.7 EUR
50+ 11 EUR
100+ 9.44 EUR
250+ 8.92 EUR
500+ 8.4 EUR
1000+ 6.79 EUR
Mindestbestellmenge: 4
SIHP30N60E-GE3 SIHP30N60E-GE3 Vishay / Siliconix sihp30n60e.pdf MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 961 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.94 EUR
10+ 11.7 EUR
25+ 9.13 EUR
100+ 8.53 EUR
250+ 8.29 EUR
500+ 8.03 EUR
1000+ 7.54 EUR
Mindestbestellmenge: 4
SIHW30N60E-GE3 SIHW30N60E-GE3 Vishay Siliconix SiHW30N60E.pdf Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
2+15 EUR
10+ 12.58 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
SKW30N60FKSA1 SKW30N60FKSA1 Infineon Technologies 669skw30n60_rev2_3g.pdffolderiddb3a304412b407950112b408e8c90004filei.pdf Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
26+ 2.75 EUR
Mindestbestellmenge: 23
WMI30N60D1 WMI30N60D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.25 EUR
26+ 2.75 EUR
33+ 2.17 EUR
Mindestbestellmenge: 23
AIKW30N60CT Infineon
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
FGH30N60LSDTU ON Semiconductor fgh30n60lsd-d.pdf
auf Bestellung 390 Stücke:
Lieferzeit 21-28 Tag (e)
G30N60A4D FAIRCHILD
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
IKW30N60H3FKSA1 Infineon_IKW30N60H3_DataSheet_v02_02_EN-3362119.pdf
IKW30N60H3FKSA1
Hersteller: Infineon Technologies
IGBT Transistors 600V 30A 187W
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.98 EUR
10+ 7.2 EUR
25+ 5.8 EUR
100+ 5.15 EUR
240+ 5.12 EUR
480+ 4.55 EUR
1200+ 4.19 EUR
Mindestbestellmenge: 7
IKW30N60H3FKSA1 infineon-ikw30n60h3-datasheet-v02_02-en.pdf
IKW30N60H3FKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 60A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 616 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60H3FKSA1 IKW30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc80c5f041c9
IKW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 247 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.03 EUR
30+ 6.36 EUR
120+ 5.45 EUR
Mindestbestellmenge: 4
IKW30N60T Infineon_IKW30N60T_DataSheet_v02_06_EN-3362343.pdf
IKW30N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 30A
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.63 EUR
10+ 8.94 EUR
25+ 8.45 EUR
100+ 7.23 EUR
240+ 6.79 EUR
480+ 6.4 EUR
1200+ 5.49 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 IKW30N60T.pdf
IKW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 167nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 0.3µs
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IKW30N60TFKSA1 IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d
Hersteller: Infineon
45A; 600V; 187W; IGBT w/ Diode   IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+13.2 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 infineon-ikw30n60t-datasheet-v02_06-en.pdf
IKW30N60TFKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 45A 187000mW Automotive 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60TFKSA1 Infineon_IKW30N60T_DataSheet_v02_06_EN-3362343.pdf
IKW30N60TFKSA1
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS DuoPack 600V 30A
auf Bestellung 1374 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.63 EUR
10+ 10.14 EUR
25+ 8.14 EUR
100+ 7.07 EUR
480+ 5.49 EUR
1200+ 5.17 EUR
Mindestbestellmenge: 5
IKW30N60TFKSA1 IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d
IKW30N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 2094 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.71 EUR
30+ 8.48 EUR
120+ 7.27 EUR
510+ 6.46 EUR
1020+ 5.53 EUR
2010+ 5.21 EUR
Mindestbestellmenge: 3
IXFH30N60P media-3323679.pdf
IXFH30N60P
Hersteller: IXYS
MOSFET 600V 30A
auf Bestellung 1800 Stücke:
Lieferzeit 336-350 Tag (e)
Anzahl Preis ohne MwSt
3+25.4 EUR
30+ 20.25 EUR
Mindestbestellmenge: 3
IXFH30N60X littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_30n60x_1of2_datasheet.pdf.pdf
IXFH30N60X
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 25 V
auf Bestellung 107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.86 EUR
30+ 15.86 EUR
Mindestbestellmenge: 2
IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.03 EUR
7+ 10.94 EUR
Mindestbestellmenge: 5
IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 166W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+16.03 EUR
7+ 10.94 EUR
Mindestbestellmenge: 5
IXGH30N60C3 littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf.pdf
Hersteller: IXYS/Littelfuse
Транзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+4.9 EUR
10+ 4.22 EUR
100+ 3.71 EUR
Mindestbestellmenge: 2
IXGH30N60C3D1 media-3322335.pdf
IXGH30N60C3D1
Hersteller: IXYS
IGBT Modules High Frequency Range 40khz C-IGBT w/Diod
auf Bestellung 489 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.11 EUR
10+ 14.09 EUR
30+ 13.65 EUR
Mindestbestellmenge: 4
IXGH30N60C3D1 littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf
IXGH30N60C3D1
Hersteller: IXYS
Description: IGBT 600V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 2329 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+19.84 EUR
30+ 15.83 EUR
120+ 14.17 EUR
510+ 12.5 EUR
1020+ 11.25 EUR
2010+ 10.54 EUR
Mindestbestellmenge: 2
IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 335nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXTH30N60L2 media-3323906.pdf
IXTH30N60L2
Hersteller: IXYS
MOSFET 30 Amps 600V
auf Bestellung 1016 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+47.89 EUR
30+ 40.25 EUR
60+ 38.79 EUR
120+ 36.5 EUR
270+ 34.84 EUR
Mindestbestellmenge: 2
IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+11.98 EUR
9+ 8.18 EUR
Mindestbestellmenge: 6
IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 282 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+11.98 EUR
9+ 8.18 EUR
Mindestbestellmenge: 6
IXTH30N60P media-3323016.pdf
IXTH30N60P
Hersteller: IXYS
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 655 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+25.19 EUR
10+ 23.92 EUR
30+ 19.94 EUR
120+ 17.97 EUR
270+ 17.68 EUR
510+ 15.86 EUR
1020+ 14.64 EUR
Mindestbestellmenge: 3
IXTH30N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
IXTH30N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 601 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.38 EUR
30+ 20.24 EUR
120+ 18.11 EUR
510+ 15.98 EUR
Mindestbestellmenge: 2
IXTQ30N60L2 media-3323906.pdf
IXTQ30N60L2
Hersteller: IXYS
MOSFET 30 Amps 600V
auf Bestellung 300 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+45.06 EUR
10+ 39.7 EUR
30+ 35.85 EUR
60+ 34.61 EUR
120+ 32.66 EUR
270+ 32.55 EUR
Mindestbestellmenge: 2
IXTQ30N60L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf
IXTQ30N60L2
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 260 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+45.34 EUR
30+ 36.72 EUR
120+ 34.56 EUR
IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+11.41 EUR
9+ 8.18 EUR
10+ 7.74 EUR
Mindestbestellmenge: 7
IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 540W
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 0.5µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11.41 EUR
9+ 8.18 EUR
10+ 7.74 EUR
Mindestbestellmenge: 7
IXTQ30N60P media-3323016.pdf
IXTQ30N60P
Hersteller: IXYS
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 260 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+23.89 EUR
10+ 20.49 EUR
30+ 18.56 EUR
120+ 17.06 EUR
270+ 15.03 EUR
510+ 14.64 EUR
1020+ 13.86 EUR
Mindestbestellmenge: 3
IXTT30N60L2 media-3323906.pdf
IXTT30N60L2
Hersteller: IXYS
MOSFET 30 Amps 600V
auf Bestellung 525 Stücke:
Lieferzeit 336-350 Tag (e)
Anzahl Preis ohne MwSt
2+50.05 EUR
10+ 50.02 EUR
30+ 50 EUR
Mindestbestellmenge: 2
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.32 EUR
10+ 7.55 EUR
11+ 7.14 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 270W
Case: TO247AD
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.32 EUR
10+ 7.55 EUR
11+ 7.14 EUR
Mindestbestellmenge: 7
IXXH30N60B3D1 media-3321928.pdf
IXXH30N60B3D1
Hersteller: IXYS
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 194 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+21.76 EUR
10+ 20.2 EUR
30+ 17.13 EUR
120+ 15.55 EUR
270+ 15.08 EUR
510+ 13.23 EUR
1020+ 11.75 EUR
Mindestbestellmenge: 3
IXXH30N60B3D1 littelfuse_discrete_igbts_xpt_ixxh30n60b3d1_datasheet.pdf.pdf
IXXH30N60B3D1
Hersteller: IXYS
Description: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 1372 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+21.92 EUR
30+ 17.5 EUR
120+ 15.66 EUR
510+ 13.81 EUR
1020+ 12.43 EUR
Mindestbestellmenge: 2
IXXH30N60C3D1 media-3320805.pdf
IXXH30N60C3D1
Hersteller: IXYS
IGBT Transistors XPT 600V IGBT 30A
auf Bestellung 181 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.17 EUR
10+ 14.92 EUR
30+ 13.52 EUR
120+ 12.4 EUR
270+ 11.67 EUR
510+ 10.43 EUR
1020+ 9.91 EUR
Mindestbestellmenge: 4
IXXH30N60C3D1 littelfuse_discrete_igbts_xpt_ixxh30n60c3d1_datasheet.pdf.pdf
IXXH30N60C3D1
Hersteller: IXYS
Description: IGBT 600V 60A 270W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/77ns
Switching Energy: 500µJ (on), 270µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 37 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 270 W
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+17.5 EUR
30+ 13.97 EUR
120+ 12.5 EUR
Mindestbestellmenge: 2
IXXQ30N60B3M littelfuse_discrete_igbts_xpt_ixxq30n60b3m_datasheet.pdf.pdf
IXXQ30N60B3M
Hersteller: IXYS
Description: IGBT
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 23ns/150ns
Switching Energy: 550µJ (on), 800µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 140 A
Power - Max: 90 W
auf Bestellung 960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13 EUR
10+ 10.91 EUR
100+ 8.82 EUR
500+ 7.84 EUR
Mindestbestellmenge: 2
MGY30N60D ROCELEC_mgy30n60d.rev0.pdf?t.download=true&u=ovmfp3
Hersteller: onsemi
Description: TRANS IGBT CHIP N-CH 600V 50A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 3094 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
94+7.79 EUR
Mindestbestellmenge: 94
NGTB30N60FWG NGTB30N60FWG.pdf
NGTB30N60FWG
Hersteller: onsemi
Description: IGBT 600V 60A 167W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 81ns/190ns
Switching Energy: 650µJ (on), 650µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 167 W
auf Bestellung 7834 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
113+6.5 EUR
Mindestbestellmenge: 113
NGTB30N60IHLWG ngtb30n60ihlw-d.pdf
NGTB30N60IHLWG
Hersteller: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 400 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/140ns
Switching Energy: 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 130 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 250 W
auf Bestellung 5700 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
129+5.7 EUR
Mindestbestellmenge: 129
NGTB30N60L2WG ngtb30n60l2wg-d.pdf
NGTB30N60L2WG
Hersteller: onsemi
Description: IGBT 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 100ns/390ns
Switching Energy: 310µJ (on), 1.14mJ (off)
Test Condition: 300V, 30A, 30Ohm, 15V
Gate Charge: 166 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 225 W
auf Bestellung 46 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.28 EUR
10+ 9.46 EUR
Mindestbestellmenge: 3
NGTB30N60SWG NGTB30N60SWG.pdf
NGTB30N60SWG
Hersteller: onsemi
Description: IGBT 600V 60A 189W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 57ns/109ns
Switching Energy: 750µJ (on), 540µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 90 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 189 W
auf Bestellung 1873 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
127+5.77 EUR
Mindestbestellmenge: 127
NGTG30N60FLWG ngtg30n60flw-d.pdf
NGTG30N60FLWG
Hersteller: onsemi
Description: IGBT 600V 60A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 83ns/170ns
Switching Energy: 700µJ (on), 280µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
auf Bestellung 8660 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
143+5.14 EUR
Mindestbestellmenge: 143
SGW30N60FKSA1 SGx30N60.pdf
SGW30N60FKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
auf Bestellung 332 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
77+9.54 EUR
Mindestbestellmenge: 77
SIHB30N60E-GE3 sihb30n60e.pdf
SIHB30N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 1289 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.09 EUR
10+ 12.22 EUR
25+ 11.15 EUR
100+ 9.54 EUR
250+ 9.23 EUR
500+ 8.48 EUR
1000+ 7.33 EUR
Mindestbestellmenge: 4
SIHB30N60E-GE3 sihb30n60e.pdf
SIHB30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1108 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.2 EUR
50+ 11.26 EUR
100+ 9.65 EUR
500+ 8.58 EUR
1000+ 7.34 EUR
Mindestbestellmenge: 2
SIHB30N60ET1-GE3 sihb30n60e.pdf
SIHB30N60ET1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 1182 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.2 EUR
10+ 11.93 EUR
100+ 9.65 EUR
Mindestbestellmenge: 2
SIHB30N60ET5-GE3 sihb30n60e.pdf
SIHB30N60ET5-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+8.58 EUR
Mindestbestellmenge: 800
SIHB30N60ET5-GE3 sihb30n60e.pdf
SIHB30N60ET5-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.2 EUR
10+ 11.93 EUR
100+ 9.65 EUR
Mindestbestellmenge: 2
SIHF30N60E-GE3 sihf30n60e.pdf
SIHF30N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 1380 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.25 EUR
10+ 11.96 EUR
25+ 9.72 EUR
100+ 8.68 EUR
250+ 8.61 EUR
1000+ 7.51 EUR
Mindestbestellmenge: 4
SIHF30N60E-GE3 sihf30n60e.pdf
SIHF30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 2973 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.33 EUR
10+ 12.04 EUR
100+ 9.74 EUR
500+ 8.65 EUR
1000+ 7.41 EUR
2000+ 6.98 EUR
Mindestbestellmenge: 2
SIHG30N60E-GE3 sihg30n60e.pdf
SIHG30N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-247AC
auf Bestellung 1380 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.25 EUR
10+ 10.5 EUR
25+ 10.06 EUR
100+ 8.81 EUR
250+ 8.63 EUR
500+ 8.14 EUR
1000+ 7.88 EUR
Mindestbestellmenge: 5
SIHG30N60E-GE3 sihg30n60e.pdf
SIHG30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 477 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15 EUR
10+ 12.58 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
SiHP30N60E-E3 sihp30n60e.pdf
SiHP30N60E-E3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 3992 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.94 EUR
10+ 11.7 EUR
50+ 11 EUR
100+ 9.44 EUR
250+ 8.92 EUR
500+ 8.4 EUR
1000+ 6.79 EUR
Mindestbestellmenge: 4
SIHP30N60E-GE3 sihp30n60e.pdf
SIHP30N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 600V Vds 30V Vgs TO-220AB
auf Bestellung 961 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.94 EUR
10+ 11.7 EUR
25+ 9.13 EUR
100+ 8.53 EUR
250+ 8.29 EUR
500+ 8.03 EUR
1000+ 7.54 EUR
Mindestbestellmenge: 4
SIHW30N60E-GE3 SiHW30N60E.pdf
SIHW30N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO247AD
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 159 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15 EUR
10+ 12.58 EUR
100+ 10.18 EUR
Mindestbestellmenge: 2
SKW30N60FKSA1 669skw30n60_rev2_3g.pdffolderiddb3a304412b407950112b408e8c90004filei.pdf
SKW30N60FKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 41A 250000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.25 EUR
26+ 2.75 EUR
Mindestbestellmenge: 23
WMI30N60D1
WMI30N60D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.25 EUR
26+ 2.75 EUR
33+ 2.17 EUR
Mindestbestellmenge: 23
AIKW30N60CT
Hersteller: Infineon
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
FGH30N60LSDTU fgh30n60lsd-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 390 Stücke:
Lieferzeit 21-28 Tag (e)
G30N60A4D
Hersteller: FAIRCHILD
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
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