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HGTG30N60A4 HGTG30N60A4
Produktcode: 42509
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FAIR HGTG30N60A4.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
1+3.40 EUR
10+3.20 EUR
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HGTG30N60A4D HGTG30N60A4D
Produktcode: 31842
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Intersil HGTG30N60A4D.pdf description Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 31 Stück:
Lieferzeit 21-28 Tag (e)
1+4.00 EUR
10+3.60 EUR
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IGW30N60T IGW30N60T
Produktcode: 101922
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INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Transistoren > Transistoren IGBT, Leistungsmodule
ZCODE: 8541290010
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30N60A
auf Bestellung 48 Stücke:
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30N60C3
auf Bestellung 1000 Stücke:
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AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.94 EUR
10+7.62 EUR
30+6.94 EUR
120+6.33 EUR
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APT30N60BC6 APT30N60BC6 MICROCHIP TECHNOLOGY 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Gate charge: 88nC
Technology: CoolMOS™
Pulsed drain current: 89A
auf Bestellung 15 Stücke:
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8+10.21 EUR
10+10.10 EUR
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APT30N60BC6 APT30N60BC6 MICROCHIP TECHNOLOGY 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Gate charge: 88nC
Technology: CoolMOS™
Pulsed drain current: 89A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
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8+10.21 EUR
10+10.10 EUR
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BIDNW30N60H3 BIDNW30N60H3 Bourns Inc. BIDNW30N60H3.pdf Description: IGBT TRENCH FS 600V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2740 Stücke:
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3+6.51 EUR
30+3.63 EUR
120+3.00 EUR
510+2.95 EUR
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BIDW30N60T BIDW30N60T Bourns Inc. BIDW30N60T.pdf Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 1873 Stücke:
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3+7.02 EUR
30+3.94 EUR
120+3.26 EUR
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DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.5mΩ
Mechanical mounting: screw
auf Bestellung 9 Stücke:
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2+37.35 EUR
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DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.5mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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10+35.92 EUR
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FCH130N60 FCH130N60 Fairchild Semiconductor FAIRS47137-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 119 Stücke:
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FCP130N60 FCP130N60 onsemi fcp130n60-d.pdf Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 5315 Stücke:
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2+10.33 EUR
10+6.93 EUR
100+5.01 EUR
800+4.25 EUR
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FGA30N60LSDTU FGA30N60LSDTU Fairchild Semiconductor FAIRS46107-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
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104+4.89 EUR
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HGT1N30N60A4D Fairchild Semiconductor FAIRS15402-1.pdf?t.download=true&u=5oefqw description Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 677 Stücke:
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16+33.28 EUR
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HGT4E30N60B3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
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63+8.09 EUR
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HGT4E30N60C3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
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59+8.66 EUR
Mindestbestellmenge: 59
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HGTG30N60A4D HGTG30N60A4D onsemi hgtg30n60a4d-d.pdf description Description: IGBT 600V 75A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 280µJ (on), 240µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
auf Bestellung 187 Stücke:
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2+13.97 EUR
10+9.52 EUR
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HGTG30N60A4D Fairchaild hgtg30n60a4d-d.pdf description IGBT транзистор - [TO-247-3]; 600 V; 75 A Low Conduction Loss
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
1+39.18 EUR
10+34.56 EUR
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HGTG30N60B3 HGTG30N60B3 Harris Corporation FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 10-14 Tag (e)
95+5.32 EUR
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HGTG30N60B3_NL HGTG30N60B3_NL Fairchild Semiconductor FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
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51+10.18 EUR
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HGTG30N60C3 HGTG30N60C3 Harris Corporation HRISS478-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
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124+4.08 EUR
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HGTG30N60C3D HGTG30N60C3D Fairchild Semiconductor FAIRS30031-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 7113 Stücke:
Lieferzeit 10-14 Tag (e)
44+11.73 EUR
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IGA30N60H3XKSA1 IGA30N60H3XKSA1 Infineon Technologies IGA30N60H3.pdf Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
169+3.00 EUR
Mindestbestellmenge: 169
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.09 EUR
10+3.97 EUR
100+2.77 EUR
500+2.26 EUR
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IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.10 EUR
Mindestbestellmenge: 1000
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IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.05 EUR
Mindestbestellmenge: 1000
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IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1960 Stücke:
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IGP30N60H3 Infineon INFNS30178-1.pdf?t.download=true&u=5oefqw Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
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5+7.27 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES IGP30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Manufacturer series: H3
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 Infineon Technologies IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6 Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 737 Stücke:
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES IGW30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 84 Stücke:
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES IGW30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
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IGW30N60H3FKSA1 IGW30N60H3FKSA1 Infineon Technologies INFNS30182-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 664 Stücke:
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IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 219 Stücke:
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22+3.32 EUR
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IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
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IGW30N60TFKSA1 Infineon INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
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5+8.07 EUR
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IGW30N60TFKSA1 IGW30N60TFKSA1 Infineon Technologies INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 12 Stücke:
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3+6.60 EUR
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IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 4280 Stücke:
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IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 3045 Stücke:
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30+3.48 EUR
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510+2.38 EUR
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IKW30N60H3 Infineon Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+7.11 EUR
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IKW30N60H3 Infineon Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
5+7.11 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.30 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES IKW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.30 EUR
7+10.21 EUR
17+4.20 EUR
30+2.66 EUR
120+2.57 EUR
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IKW30N60H3FKSA1 IKW30N60H3FKSA1 Infineon Technologies IKW30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc80c5f041c9 Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 268 Stücke:
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3+7.15 EUR
30+3.95 EUR
120+3.24 EUR
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IKW30N60TFKSA1 Infineon IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C;   IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
5+13.83 EUR
Mindestbestellmenge: 5
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IKW30N60TFKSA1 IKW30N60TFKSA1 Infineon Technologies IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 6321 Stücke:
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3+8.17 EUR
30+4.55 EUR
120+3.76 EUR
510+3.18 EUR
1020+2.96 EUR
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IXFH30N60P IXFH30N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 300 Stücke:
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2+16.33 EUR
30+10.29 EUR
120+9.19 EUR
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IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
auf Bestellung 7 Stücke:
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5+16.03 EUR
7+10.94 EUR
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IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
Anzahl je Verpackung: 1 Stücke
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5+16.03 EUR
7+10.94 EUR
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IXGH30N60C3 IXYS/Littelfuse littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf.pdf Транзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
auf Bestellung 27 Stücke:
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10+4.10 EUR
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IXGH30N60C3D1 IXGH30N60C3D1 IXYS littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.64 EUR
30+7.94 EUR
120+6.68 EUR
510+5.87 EUR
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IXTH30N60L2 IXTH30N60L2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 234 Stücke:
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1+33.62 EUR
30+21.38 EUR
120+19.28 EUR
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IXTH30N60P IXTH30N60P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 456 Stücke:
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1+19.10 EUR
30+11.41 EUR
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IXTT30N60L2 IXTT30N60L2 Littelfuse Inc. littelfuse-discrete-mosfets-ixt-30n60-datasheet?assetguid=fdf1a63b-46a2-4336-8b0e-3b71ce52437f Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1977 Stücke:
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1+33.25 EUR
30+22.59 EUR
120+20.54 EUR
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 78 Stücke:
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7+10.32 EUR
10+7.39 EUR
30+7.38 EUR
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
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7+10.32 EUR
10+7.39 EUR
30+7.38 EUR
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IXXH30N60B3D1 IXXH30N60B3D1 IXYS littelfuse_discrete_igbts_xpt_ixxh30n60b3d1_datasheet.pdf.pdf Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 1523 Stücke:
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2+10.05 EUR
30+5.79 EUR
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MGY30N60D onsemi ROCELEC_mgy30n60d.rev0.pdf?t.download=true&u=ovmfp3 Description: TRANS IGBT CHIP N-CH 600V 50A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 3094 Stücke:
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94+5.39 EUR
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HGTG30N60A4
Produktcode: 42509
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HGTG30N60A4.pdf
HGTG30N60A4
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+3.40 EUR
10+3.20 EUR
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HGTG30N60A4D
Produktcode: 31842
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description HGTG30N60A4D.pdf
HGTG30N60A4D
Hersteller: Intersil
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 31 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+4.00 EUR
10+3.60 EUR
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IGW30N60T
Produktcode: 101922
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INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60T
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30N60A
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
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30N60C3
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
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AIKW30N60CTXKSA1 Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f
AIKW30N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.94 EUR
10+7.62 EUR
30+6.94 EUR
120+6.33 EUR
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APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Gate charge: 88nC
Technology: CoolMOS™
Pulsed drain current: 89A
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.51 EUR
8+10.21 EUR
10+10.10 EUR
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APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Gate charge: 88nC
Technology: CoolMOS™
Pulsed drain current: 89A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.51 EUR
8+10.21 EUR
10+10.10 EUR
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BIDNW30N60H3 BIDNW30N60H3.pdf
BIDNW30N60H3
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2740 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.51 EUR
30+3.63 EUR
120+3.00 EUR
510+2.95 EUR
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BIDW30N60T BIDW30N60T.pdf
BIDW30N60T
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 1873 Stücke:
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Anzahl Preis
3+7.02 EUR
30+3.94 EUR
120+3.26 EUR
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DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.5mΩ
Mechanical mounting: screw
auf Bestellung 9 Stücke:
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Anzahl Preis
2+37.35 EUR
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DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 1.5mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+37.35 EUR
10+35.92 EUR
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FCH130N60 FAIRS47137-1.pdf?t.download=true&u=5oefqw
FCH130N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 119 Stücke:
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Anzahl Preis
119+4.33 EUR
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FCP130N60 fcp130n60-d.pdf
FCP130N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 5315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.33 EUR
10+6.93 EUR
100+5.01 EUR
800+4.25 EUR
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FGA30N60LSDTU FAIRS46107-1.pdf?t.download=true&u=5oefqw
FGA30N60LSDTU
Hersteller: Fairchild Semiconductor
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
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Anzahl Preis
104+4.89 EUR
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HGT1N30N60A4D description FAIRS15402-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 677 Stücke:
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Anzahl Preis
16+33.28 EUR
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HGT4E30N60B3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
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Anzahl Preis
63+8.09 EUR
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HGT4E30N60C3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
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Anzahl Preis
59+8.66 EUR
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HGTG30N60A4D description hgtg30n60a4d-d.pdf
HGTG30N60A4D
Hersteller: onsemi
Description: IGBT 600V 75A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/150ns
Switching Energy: 280µJ (on), 240µJ (off)
Test Condition: 390V, 30A, 3Ohm, 15V
Gate Charge: 225 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 463 W
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.97 EUR
10+9.52 EUR
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HGTG30N60A4D description hgtg30n60a4d-d.pdf
Hersteller: Fairchaild
IGBT транзистор - [TO-247-3]; 600 V; 75 A Low Conduction Loss
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+39.18 EUR
10+34.56 EUR
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HGTG30N60B3 FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3
Hersteller: Harris Corporation
Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
95+5.32 EUR
Mindestbestellmenge: 95
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HGTG30N60B3_NL FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3_NL
Hersteller: Fairchild Semiconductor
Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
51+10.18 EUR
Mindestbestellmenge: 51
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HGTG30N60C3 HRISS478-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
124+4.08 EUR
Mindestbestellmenge: 124
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HGTG30N60C3D FAIRS30031-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3D
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 7113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+11.73 EUR
Mindestbestellmenge: 44
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IGA30N60H3XKSA1 IGA30N60H3.pdf
IGA30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
169+3.00 EUR
Mindestbestellmenge: 169
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.09 EUR
10+3.97 EUR
100+2.77 EUR
500+2.26 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.10 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.05 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
10+3.89 EUR
100+2.72 EUR
500+2.21 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3 INFNS30178-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+7.27 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3-DTE.pdf
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Manufacturer series: H3
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6
IGP30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
50+3.09 EUR
100+2.79 EUR
500+2.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 IGW30N60H3-DTE.pdf
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.49 EUR
28+2.57 EUR
30+2.43 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 IGW30N60H3-DTE.pdf
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.49 EUR
28+2.57 EUR
30+2.43 EUR
120+2.35 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 INFNS30182-1.pdf?t.download=true&u=5oefqw
IGW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
30+3.59 EUR
120+2.93 EUR
510+2.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
22+3.32 EUR
29+2.53 EUR
30+2.40 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 187W
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 219 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.68 EUR
22+3.32 EUR
29+2.53 EUR
30+2.40 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+8.07 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.60 EUR
Mindestbestellmenge: 3
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IGW30N60TPXKSA1 Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 4280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
30+2.43 EUR
120+1.98 EUR
510+1.77 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60DTPXKSA1 Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 3045 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.35 EUR
30+3.48 EUR
120+2.84 EUR
510+2.38 EUR
1020+2.21 EUR
2010+2.11 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+7.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+7.11 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.30 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3.pdf
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 94W
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Manufacturer series: H3
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.30 EUR
7+10.21 EUR
17+4.20 EUR
30+2.66 EUR
120+2.57 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc80c5f041c9
IKW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 38 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
30+3.95 EUR
120+3.24 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60TFKSA1 IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C;   IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+13.83 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60TFKSA1 IKW30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42889a63e1d
IKW30N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 6321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.17 EUR
30+4.55 EUR
120+3.76 EUR
510+3.18 EUR
1020+2.96 EUR
Mindestbestellmenge: 3
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IXFH30N60P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_30n60p_datasheet.pdf.pdf
IXFH30N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.33 EUR
30+10.29 EUR
120+9.19 EUR
Mindestbestellmenge: 2
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IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.03 EUR
7+10.94 EUR
Mindestbestellmenge: 5
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IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.03 EUR
7+10.94 EUR
Mindestbestellmenge: 5
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IXGH30N60C3 littelfuse_discrete_igbts_pt_ixg_30n60c3_datasheet.pdf.pdf
Hersteller: IXYS/Littelfuse
Транзистор IGBT без зворотного діоду; Uceb, В = 600; Ic, А = 60; Pmax, Вт = 220; Uce(on), В = 3; Uge(th), В = 15; Тексп, °С = -40...+125; Тип монт = вивідний; td(on), нс = 26; td(off), нс = 42; TO-247AD
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+4.76 EUR
10+4.10 EUR
100+3.61 EUR
Mindestbestellmenge: 2
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IXGH30N60C3D1 littelfuse_discrete_igbts_pt_ixg_30n60c3d1_datasheet.pdf.pdf
IXGH30N60C3D1
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 1373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.64 EUR
30+7.94 EUR
120+6.68 EUR
510+5.87 EUR
Mindestbestellmenge: 2
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IXTH30N60L2 littelfuse_discrete_mosfets_n-channel_linear_ixt_30n60_datasheet.pdf.pdf
IXTH30N60L2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.62 EUR
30+21.38 EUR
120+19.28 EUR
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IXTH30N60P littelfuse_discrete_mosfets_n-channel_standard_ixt_30n60p_datasheet.pdf.pdf
IXTH30N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.10 EUR
30+11.41 EUR
120+9.73 EUR
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IXTT30N60L2 littelfuse-discrete-mosfets-ixt-30n60-datasheet?assetguid=fdf1a63b-46a2-4336-8b0e-3b71ce52437f
IXTT30N60L2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 30A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1977 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+33.25 EUR
30+22.59 EUR
120+20.54 EUR
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IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.32 EUR
10+7.39 EUR
30+7.38 EUR
Mindestbestellmenge: 7
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IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Case: TO247AD
Mounting: THT
Kind of package: tube
Power dissipation: 270W
Gate charge: 39nC
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Turn-on time: 23ns
Turn-off time: 125ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.32 EUR
10+7.39 EUR
30+7.38 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXXH30N60B3D1 littelfuse_discrete_igbts_xpt_ixxh30n60b3d1_datasheet.pdf.pdf
IXXH30N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/97ns
Switching Energy: 550µJ (on), 500µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 39 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 115 A
Power - Max: 270 W
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.05 EUR
30+5.79 EUR
120+5.25 EUR
Mindestbestellmenge: 2
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MGY30N60D ROCELEC_mgy30n60d.rev0.pdf?t.download=true&u=ovmfp3
Hersteller: onsemi
Description: TRANS IGBT CHIP N-CH 600V 50A 3P
Packaging: Bulk
Part Status: Active
auf Bestellung 3094 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+5.39 EUR
Mindestbestellmenge: 94
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