Suchergebnisse für "30n60" : > 60

Wählen Sie Seite:   1 2  [ Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
HGTG30N60A4 HGTG30N60A4
Produktcode: 42509
zu Favoriten hinzufügen Lieblingsprodukt

FAIR HGTG30N60A4.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
1+3.4 EUR
10+3.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60A4D HGTG30N60A4D
Produktcode: 31842
zu Favoriten hinzufügen Lieblingsprodukt

Intersil HGTG30N60A4D.pdf description Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 10 Stück:
1+4 EUR
10+3.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60T IGW30N60T
Produktcode: 101922
zu Favoriten hinzufügen Lieblingsprodukt

INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Transistoren > Transistoren IGBT, Leistungsmodule
ZCODE: 8541290010
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
30N60A
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
30N60C3
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.91 EUR
10+6.83 EUR
30+6.22 EUR
120+5.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon_AIKW30N60CT_DS_v02_01_EN.pdf IGBTs DISCRETES
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.92 EUR
10+6.23 EUR
100+5.46 EUR
480+5.3 EUR
1200+5.16 EUR
2640+5.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
APT30N60BC6 APT30N60BC6 MICROCHIP TECHNOLOGY 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Pulsed drain current: 89A
Technology: CoolMOS™
Gate charge: 88nC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
APT30N60BC6 APT30N60BC6 MICROCHIP TECHNOLOGY 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Pulsed drain current: 89A
Technology: CoolMOS™
Gate charge: 88nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 BIDNW30N60H3 BOURNS BIDNW30N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 230W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: Field Stop
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
34+3.3 EUR
200+2.9 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 BIDNW30N60H3 Bourns Bourns_7-25-2022_BIDNW30N60H3_datasheet.pdf IGBTs IGBT Discrete 600V, 30A in TO-247N
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.86 EUR
10+3.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 BIDNW30N60H3 Bourns Inc. BIDNW30N60H3.pdf Description: IGBT TRENCH FS 600V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
30+3.26 EUR
120+2.69 EUR
510+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T BIDW30N60T BOURNS BIDW30N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 230W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: Field Stop
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
30+3.65 EUR
150+3.22 EUR
300+3.16 EUR
600+3.1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T BIDW30N60T Bourns Bourns_7-25-2022_BIDW30N60T_datasheet.pdf IGBTs IGBT Discrete 600V, 30A in TO-247
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.7 EUR
10+3.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T BIDW30N60T Bourns Inc. BIDW30N60T.pdf Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.3 EUR
30+3.53 EUR
120+2.93 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
2+36.62 EUR
3+35.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
2+36.62 EUR
3+35.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH130N60 FCH130N60 Fairchild Semiconductor FAIRS47137-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
119+3.8 EUR
Mindestbestellmenge: 119
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 FCP130N60 Fairchild Semiconductor ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
102+4.44 EUR
Mindestbestellmenge: 102
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 FCP130N60 onsemi fcp130n60-d.pdf Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.89 EUR
10+6.4 EUR
100+4.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 FCP130N60 onsemi / Fairchild FCP130N60-D.pdf MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.73 EUR
10+6.41 EUR
100+4.59 EUR
500+4.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FGA30N60LSDTU FGA30N60LSDTU Fairchild Semiconductor FAIRS46107-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
110+4.15 EUR
Mindestbestellmenge: 110
Im Einkaufswagen  Stück im Wert von  UAH
HGT1N30N60A4D Fairchild Semiconductor FAIRS15402-1.pdf?t.download=true&u=5oefqw description Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
17+28.17 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
HGT4E30N60B3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
67+6.84 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
HGT4E30N60C3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
62+7.34 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60B3 HGTG30N60B3 Harris Corporation FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 10-14 Tag (e)
101+4.5 EUR
Mindestbestellmenge: 101
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60B3_NL HGTG30N60B3_NL Fairchild Semiconductor FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
51+8.88 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60C3 HGTG30N60C3 Harris Corporation HRISS478-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
131+3.47 EUR
Mindestbestellmenge: 131
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60C3D HGTG30N60C3D Fairchild Semiconductor FAIRS30031-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)
46+9.9 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IGA30N60H3XKSA1 IGA30N60H3XKSA1 Infineon Technologies IGA30N60H3.pdf Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
180+2.52 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3 IGB30N60H3 Infineon Technologies Infineon-IGB30N60H3-DS-v02_03-en.pdf IGBTs 600v Hi-Speed SW IGBT
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.4 EUR
10+2.87 EUR
100+2.11 EUR
500+1.76 EUR
1000+1.64 EUR
5000+1.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.4 EUR
10+2.85 EUR
100+1.97 EUR
500+1.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.47 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60T IGB30N60T Infineon Technologies Infineon-IGB30N60T-DataSheet-v02_05-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 30A
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.33 EUR
10+2.82 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.3 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.31 EUR
10+2.8 EUR
100+1.93 EUR
500+1.59 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3 Infineon INFNS30178-1.pdf?t.download=true&u=5oefqw Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3 IGP30N60H3 Infineon Technologies Infineon_IGP30N60H3_DataSheet_v02_02_EN.pdf IGBTs 600V 30A 187W
auf Bestellung 617 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.22 EUR
100+2.46 EUR
500+2.06 EUR
1000+1.78 EUR
2500+1.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.03 EUR
40+1.8 EUR
43+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 Infineon IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6 Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.03 EUR
40+1.8 EUR
43+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3XKSA1 Infineon Technologies IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6 Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
50+2.49 EUR
100+2.25 EUR
500+1.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3 IGW30N60H3 Infineon Technologies Infineon-IGW30N60H3-DataSheet-v02_02-EN.pdf IGBTs 600V HI SPEED SW IGBT
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.24 EUR
10+2.87 EUR
100+2.32 EUR
480+1.94 EUR
1200+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
23+3.17 EUR
28+2.59 EUR
30+2.45 EUR
31+2.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 IGW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.23 EUR
23+3.17 EUR
28+2.59 EUR
30+2.45 EUR
31+2.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 IGW30N60H3FKSA1 Infineon Technologies INFNS30182-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 4013 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
30+2.85 EUR
120+2.32 EUR
510+1.93 EUR
1020+1.79 EUR
2010+1.68 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60T IGW30N60T Infineon Technologies Infineon-IGW30N60T-DataSheet-v02_08-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 30A
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.98 EUR
10+3.29 EUR
100+2.69 EUR
480+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.29 EUR
19+3.93 EUR
29+2.55 EUR
30+2.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 Infineon INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
5+7.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.29 EUR
19+3.93 EUR
29+2.55 EUR
30+2.4 EUR
120+2.36 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 IGW30N60TFKSA1 Infineon Technologies INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.97 EUR
30+3.28 EUR
120+2.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 3080 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.34 EUR
30+1.78 EUR
120+1.44 EUR
510+1.18 EUR
1020+1.14 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies Infineon-IGW30N60TP-DataSheet-v02_01-EN.pdf IGBTs INDUSTRY 14
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+1.74 EUR
100+1.44 EUR
480+1.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.47 EUR
30+2.4 EUR
120+1.95 EUR
510+1.61 EUR
1020+1.49 EUR
2010+1.39 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies Infineon_IKW30N60DTP_DataSheet_v02_01_EN.pdf IGBTs INDUSTRY 14
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.49 EUR
10+2.43 EUR
100+2.01 EUR
480+1.53 EUR
1200+1.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3 Infineon Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3 Infineon Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3 IKW30N60H3 Infineon Technologies Infineon-IKW30N60H3-DataSheet-v02_02-EN.pdf IGBTs 600V 30A 187W
auf Bestellung 3203 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.14 EUR
10+3.34 EUR
100+2.55 EUR
480+2.15 EUR
1200+1.83 EUR
2640+1.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.73 EUR
25+2.86 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 IKW30N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.73 EUR
25+2.86 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60A4
Produktcode: 42509
zu Favoriten hinzufügen Lieblingsprodukt

HGTG30N60A4.pdf
HGTG30N60A4
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis
1+3.4 EUR
10+3.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60A4D
Produktcode: 31842
zu Favoriten hinzufügen Lieblingsprodukt

description HGTG30N60A4D.pdf
HGTG30N60A4D
Hersteller: Intersil
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 10 Stück:
Anzahl Preis
1+4 EUR
10+3.6 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60T
Produktcode: 101922
zu Favoriten hinzufügen Lieblingsprodukt

INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60T
Transistoren > Transistoren IGBT, Leistungsmodule
ZCODE: 8541290010
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
30N60A
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
30N60C3
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIKW30N60CTXKSA1 Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f
AIKW30N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.91 EUR
10+6.83 EUR
30+6.22 EUR
120+5.67 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIKW30N60CTXKSA1 Infineon_AIKW30N60CT_DS_v02_01_EN.pdf
AIKW30N60CTXKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.92 EUR
10+6.23 EUR
100+5.46 EUR
480+5.3 EUR
1200+5.16 EUR
2640+5.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Pulsed drain current: 89A
Technology: CoolMOS™
Gate charge: 88nC
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 219W
Pulsed drain current: 89A
Technology: CoolMOS™
Gate charge: 88nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 BIDNW30N60H3.pdf
BIDNW30N60H3
Hersteller: BOURNS
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 230W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: Field Stop
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+3.3 EUR
200+2.9 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 Bourns_7-25-2022_BIDNW30N60H3_datasheet.pdf
BIDNW30N60H3
Hersteller: Bourns
IGBTs IGBT Discrete 600V, 30A in TO-247N
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.86 EUR
10+3.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BIDNW30N60H3 BIDNW30N60H3.pdf
BIDNW30N60H3
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO-247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.84 EUR
30+3.26 EUR
120+2.69 EUR
510+2.64 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T BIDW30N60T.pdf
BIDW30N60T
Hersteller: BOURNS
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Collector current: 60A
Gate-emitter voltage: ±20V
Power dissipation: 230W
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Technology: Field Stop
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.65 EUR
150+3.22 EUR
300+3.16 EUR
600+3.1 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T Bourns_7-25-2022_BIDW30N60T_datasheet.pdf
BIDW30N60T
Hersteller: Bourns
IGBTs IGBT Discrete 600V, 30A in TO-247
auf Bestellung 3781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.7 EUR
10+3.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BIDW30N60T BIDW30N60T.pdf
BIDW30N60T
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.3 EUR
30+3.53 EUR
120+2.93 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+36.62 EUR
3+35.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+36.62 EUR
3+35.22 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCH130N60 FAIRS47137-1.pdf?t.download=true&u=5oefqw
FCH130N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
119+3.8 EUR
Mindestbestellmenge: 119
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw
FCP130N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
102+4.44 EUR
Mindestbestellmenge: 102
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 fcp130n60-d.pdf
FCP130N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.89 EUR
10+6.4 EUR
100+4.63 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FCP130N60 FCP130N60-D.pdf
FCP130N60
Hersteller: onsemi / Fairchild
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.73 EUR
10+6.41 EUR
100+4.59 EUR
500+4.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FGA30N60LSDTU FAIRS46107-1.pdf?t.download=true&u=5oefqw
FGA30N60LSDTU
Hersteller: Fairchild Semiconductor
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.15 EUR
Mindestbestellmenge: 110
Im Einkaufswagen  Stück im Wert von  UAH
HGT1N30N60A4D description FAIRS15402-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+28.17 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
HGT4E30N60B3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+6.84 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
HGT4E30N60C3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
62+7.34 EUR
Mindestbestellmenge: 62
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60B3 FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3
Hersteller: Harris Corporation
Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
101+4.5 EUR
Mindestbestellmenge: 101
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60B3_NL FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3_NL
Hersteller: Fairchild Semiconductor
Description: IGBT NPT 600V 60A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
51+8.88 EUR
Mindestbestellmenge: 51
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60C3 HRISS478-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
131+3.47 EUR
Mindestbestellmenge: 131
Im Einkaufswagen  Stück im Wert von  UAH
HGTG30N60C3D FAIRS30031-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3D
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+9.9 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IGA30N60H3XKSA1 IGA30N60H3.pdf
IGA30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
180+2.52 EUR
Mindestbestellmenge: 180
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3 Infineon-IGB30N60H3-DS-v02_03-en.pdf
IGB30N60H3
Hersteller: Infineon Technologies
IGBTs 600v Hi-Speed SW IGBT
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.4 EUR
10+2.87 EUR
100+2.11 EUR
500+1.76 EUR
1000+1.64 EUR
5000+1.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1060 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
10+2.85 EUR
100+1.97 EUR
500+1.63 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.47 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60T Infineon-IGB30N60T-DataSheet-v02_05-EN.pdf
IGB30N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 30A
auf Bestellung 972 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.33 EUR
10+2.82 EUR
100+1.94 EUR
500+1.61 EUR
1000+1.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.3 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.31 EUR
10+2.8 EUR
100+1.93 EUR
500+1.59 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3 INFNS30178-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3 Infineon_IGP30N60H3_DataSheet_v02_02_EN.pdf
IGP30N60H3
Hersteller: Infineon Technologies
IGBTs 600V 30A 187W
auf Bestellung 617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.96 EUR
10+3.22 EUR
100+2.46 EUR
500+2.06 EUR
1000+1.78 EUR
2500+1.68 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
40+1.8 EUR
43+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+4.48 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B332CC64E08FA8&compId=IGP30N60H3-DTE.pdf?ci_sign=58814dcd16264ce65d7c642553669d3049471ee2
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 5
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.03 EUR
40+1.8 EUR
43+1.69 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N60H3XKSA1 IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6
IGP30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 562 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
50+2.49 EUR
100+2.25 EUR
500+1.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3 Infineon-IGW30N60H3-DataSheet-v02_02-EN.pdf
IGW30N60H3
Hersteller: Infineon Technologies
IGBTs 600V HI SPEED SW IGBT
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.24 EUR
10+2.87 EUR
100+2.32 EUR
480+1.94 EUR
1200+1.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.17 EUR
28+2.59 EUR
30+2.45 EUR
31+2.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36955C3EDAFA8&compId=IGW30N60H3-DTE.pdf?ci_sign=67638d2c2709d4fbf274df53d140b550492f47b6
IGW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.23 EUR
23+3.17 EUR
28+2.59 EUR
30+2.45 EUR
31+2.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60H3FKSA1 INFNS30182-1.pdf?t.download=true&u=5oefqw
IGW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 4013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
30+2.85 EUR
120+2.32 EUR
510+1.93 EUR
1020+1.79 EUR
2010+1.68 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60T Infineon-IGW30N60T-DataSheet-v02_08-EN.pdf
IGW30N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 30A
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.98 EUR
10+3.29 EUR
100+2.69 EUR
480+2.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
19+3.93 EUR
29+2.55 EUR
30+2.4 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+7.63 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B36BD911164FA8&compId=IGW30N60TFKSA1-DTE.pdf?ci_sign=b018b9d13f27961b38a7cb999c2ec06c3206561e
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 187W
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.29 EUR
19+3.93 EUR
29+2.55 EUR
30+2.4 EUR
120+2.36 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.97 EUR
30+3.28 EUR
120+2.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TPXKSA1 Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 3080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
30+1.78 EUR
120+1.44 EUR
510+1.18 EUR
1020+1.14 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IGW30N60TPXKSA1 Infineon-IGW30N60TP-DataSheet-v02_01-EN.pdf
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 126 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.96 EUR
10+1.74 EUR
100+1.44 EUR
480+1.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60DTPXKSA1 Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 2411 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.47 EUR
30+2.4 EUR
120+1.95 EUR
510+1.61 EUR
1020+1.49 EUR
2010+1.39 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60DTPXKSA1 Infineon_IKW30N60DTP_DataSheet_v02_01_EN.pdf
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+2.43 EUR
100+2.01 EUR
480+1.53 EUR
1200+1.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+6.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+6.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3 Infineon-IKW30N60H3-DataSheet-v02_02-EN.pdf
IKW30N60H3
Hersteller: Infineon Technologies
IGBTs 600V 30A 187W
auf Bestellung 3203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.14 EUR
10+3.34 EUR
100+2.55 EUR
480+2.15 EUR
1200+1.83 EUR
2640+1.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.73 EUR
25+2.86 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0D0E718220745&compId=IKW30N60H3.pdf?ci_sign=a1c79d86c62d9b0a8b38302b25c49b78756d1a41
IKW30N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 94W
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Technology: TRENCHSTOP™ 3
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 165nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 142 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.73 EUR
25+2.86 EUR
30+2.4 EUR
33+2.19 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  [ Nächste Seite >> ]