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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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HGTG30N60A4 Produktcode: 42509
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR/ON |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-247 Kollektor-Emitter-Spannung Vces, V: 600 V Sättigungsspannung Vce, V: 1,8 V Kollektorstrom Ic bei 25°C, A: 75 A Kollektorstrom Ic bei 100°C, A: 60 A Verlustleistung Pd bei 25°C, W: 463 W Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 25/150 |
auf Bestellung: 1 St.
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HGTG30N60A4D Produktcode: 31842
zu Favoriten hinzufügen
Lieblingsprodukt
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ON |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-247 Kollektor-Emitter-Spannung Vces, V: 600 V Sättigungsspannung Vce, V: 1,8 V Kollektorstrom Ic bei 25°C, A: 75 A Kollektorstrom Ic bei 100°C, A: 60 A Verlustleistung Pd bei 25°C, W: 463 W Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 24/180 |
auf Bestellung: 20 St.
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IGW30N60T Produktcode: 101922
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule Zolltarifnummer: 8541 29 00 10 |
auf Bestellung: 1 St.
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| 30N60A |
auf Bestellung 48 Stücke: Lieferzeit 21-28 Tag (e) |
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| 30N60C3 |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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AIKW30N60CTXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 690µJ (on), 770µJ (off) Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 188 Stücke: Lieferzeit 10-14 Tag (e) |
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AIKW30N60CTXKSA1 | Infineon Technologies |
IGBTs DISCRETES |
auf Bestellung 266 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDNW30N60H3 | Bourns |
IGBTs IGBT Discrete 600V, 30A in TO-247N |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDW30N60T | BOURNS |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3; Eoff: 0.45mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 60A Power dissipation: 230W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Technology: Field Stop; Trench Turn-on time: 30ns Turn-off switching energy: 0.45mJ Turn-on switching energy: 1.85mJ Gate charge: 76nC |
auf Bestellung 399 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 32 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BIDW30N60T | Bourns Inc. |
Description: IGBT TRENCH FS 600V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/67ns Switching Energy: 1.85mJ (on), 450µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 76 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 230 W |
auf Bestellung 779 Stücke: Lieferzeit 10-14 Tag (e) |
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BIDW30N60T | Bourns |
IGBTs IGBT Discrete 600V, 30A in TO-247 |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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CT15Z-30N600-4 | Challenge Electronics |
Description: BUZZER ELEMENT 6KHZ 15MM Packaging: Tray Size / Dimension: 0.591" Dia (15.00mm) Type: Standard Operating Temperature: -20°C ~ 60°C Capacitance @ Frequency: 14000pF @ 100Hz Voltage - Input (Max): 30V p-p Termination: None |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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DAMI330N60 | DACO Semiconductor |
Category: Transistor modules Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw Polarisation: unipolar Drain-source voltage: 60V Drain current: 300A Case: SOT227B On-state resistance: 1.5mΩ Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCH130N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 28A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V |
auf Bestellung 119 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP130N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 28A TO220-3 |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP130N60 | onsemi |
MOSFETs N-Channel SuperFET II MOSFET |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP130N60 | onsemi |
Description: MOSFET N-CH 600V 28A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA30N60LSDTU | Fairchild Semiconductor |
Description: IGBT TRENCH FS 600V 60A TO-3P Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/250ns Switching Energy: 1.1mJ (on), 21mJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 225 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 480 W |
auf Bestellung 551 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGT1N30N60A4D | Fairchild Semiconductor |
Description: IGBT MOD 600V 96A 255W SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A NTC Thermistor: No Supplier Device Package: SOT-227B Part Status: Obsolete Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 255 W Current - Collector Cutoff (Max): 250 µA |
auf Bestellung 902 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGT4E30N60B3S | Harris Corporation |
Description: IGBT 60A, 600V, N CHANNEL, TO 26 Packaging: Bulk Part Status: Active |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGT4E30N60C3S | Harris Corporation |
Description: IGBT 60A, 600V, N CHANNEL, TO 26 Packaging: Bulk Part Status: Active |
auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG30N60B3 | Harris Corporation |
Description: IGBT 600V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247 Td (on/off) @ 25°C: 36ns/137ns Switching Energy: 500µJ (on), 680µJ (off) Test Condition: 480V, 30A, 3Ohm, 15V Gate Charge: 170 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 220 A Power - Max: 208 W |
auf Bestellung 16153 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG30N60C3 | Harris Corporation |
Description: IGBT 600V 63A SUPER-247 Packaging: Bulk Package / Case: TO-274AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: SUPER-247 (TO-274AA) Td (on/off) @ 25°C: 40ns/320ns Switching Energy: 1.05mJ (on), 2.5mJ (off) Test Condition: 480V, 30A, 3Ohm, 15V Gate Charge: 250 nC Part Status: Active Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
auf Bestellung 1321 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTG30N60C3D | Fairchild Semiconductor |
Description: IGBT 600V 63A TO-247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: TO-247 Switching Energy: 1.05mJ (on), 2.5mJ (off) Gate Charge: 162 nC Part Status: Active Current - Collector (Ic) (Max): 63 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 252 A Power - Max: 208 W |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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IGA30N60H3XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO220-3-31 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/207ns Switching Energy: 1.17mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 43 W |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB30N60H3 | Infineon Technologies |
IGBTs 600v Hi-Speed SW IGBT |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB30N60H3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGB30N60H3ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/207ns Switching Energy: 1.17mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGB30N60H3ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO263-3 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO263-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/207ns Switching Energy: 1.17mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
auf Bestellung 4394 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP30N60H3XKSA1 | Infineon |
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW30N60H3 | Infineon Technologies |
IGBTs 600V HI SPEED SW IGBT |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW30N60H3FKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 21ns/207ns Switching Energy: 1.38mJ Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 165 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 187 W |
auf Bestellung 6475 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60T | Infineon Technologies |
IGBTs LOW LOSS IGBT TECH 600V 30A |
auf Bestellung 1547 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IGW30N60TFKSA1 | Infineon |
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t Anzahl je Verpackung: 5 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW30N60TFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 1.46mJ Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60TPXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 53A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/179ns Switching Energy: 710µJ (on), 420µJ (off) Test Condition: 400V, 30A, 10.5Ohm, 15V Gate Charge: 130 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 53 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 200 W |
auf Bestellung 1860 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW30N60TPXKSA1 | Infineon Technologies |
IGBTs INDUSTRY |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N60H3 | Infineon |
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N60H3 | Infineon |
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N60H3 | Infineon Technologies |
IGBTs 600V 30A 187W |
auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N60H3FKSA1 | Infineon Technologies |
IGBTs 600V 30A 187W |
auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
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| IKW30N60T | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 45A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Technology: Field Stop; Trench Pulsed collector current: 45A Turn-on time: 23ns Turn-off switching energy: 0.77mJ Turn-on switching energy: 0.69mJ Gate charge: 167nC |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 17 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IKW30N60T | Infineon Technologies |
IGBTs LOW LOSS DuoPack 600V 30A |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 39A; TO247-3 Collector current: 39A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Turn-off time: 0.3µs Mounting: THT Collector-emitter voltage: 600V Gate charge: 167nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Turn-on time: 44ns Kind of package: tube |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IKW30N60TFKSA1 | Infineon |
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IKW30N60T TIKW30n60t Anzahl je Verpackung: 5 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW30N60TFKSA1 | Infineon Technologies |
IGBTs LOW LOSS DuoPack 600V 30A |
auf Bestellung 3053 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW30N60TFKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 143 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A Supplier Device Package: PG-TO247-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 1.46mJ Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
auf Bestellung 1440 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH30N60P | IXYS |
Description: MOSFET N-CH 600V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V |
auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH30N60P | IXYS |
MOSFETs 600V 30A |
auf Bestellung 1709 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFR30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™ Type of transistor: N-MOSFET Power dissipation: 166W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 0.25Ω Gate charge: 85nC |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IXGH30N60C3D1 | IXYS |
Description: IGBT 600V 60A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 16ns/42ns Switching Energy: 270µJ (on), 90µJ (off) Test Condition: 300V, 20A, 5Ohm, 15V Gate Charge: 38 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 220 W |
auf Bestellung 541 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60L2 | IXYS |
MOSFETs 30 Amps 600V |
auf Bestellung 4520 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60L2 | IXYS |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
auf Bestellung 1063 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns Features of semiconductor devices: standard power mosfet Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Kind of package: tube Case: TO247-3 On-state resistance: 0.24Ω Reverse recovery time: 0.5µs Mounting: THT Power dissipation: 540W Gate charge: 82nC Polarisation: unipolar |
auf Bestellung 243 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IXTH30N60P | IXYS |
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH30N60P | IXYS |
Description: MOSFET N-CH 600V 30A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V |
auf Bestellung 290 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ30N60L2 | IXYS |
Description: MOSFET N-CH 600V 30A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-3P Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ30N60L2 | IXYS |
MOSFETs 30 Amps 600V |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTG30N60A4 Produktcode: 42509
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: FAIR/ON
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,8 V
Kollektorstrom Ic bei 25°C, A: 75 A
Kollektorstrom Ic bei 100°C, A: 60 A
Verlustleistung Pd bei 25°C, W: 463 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 25/150
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,8 V
Kollektorstrom Ic bei 25°C, A: 75 A
Kollektorstrom Ic bei 100°C, A: 60 A
Verlustleistung Pd bei 25°C, W: 463 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 25/150
auf Bestellung: 1 St.
- 1 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.9 EUR |
| 10+ | 3.81 EUR |
| HGTG30N60A4D Produktcode: 31842
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: ON
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,8 V
Kollektorstrom Ic bei 25°C, A: 75 A
Kollektorstrom Ic bei 100°C, A: 60 A
Verlustleistung Pd bei 25°C, W: 463 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 24/180
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Kollektor-Emitter-Spannung Vces, V: 600 V
Sättigungsspannung Vce, V: 1,8 V
Kollektorstrom Ic bei 25°C, A: 75 A
Kollektorstrom Ic bei 100°C, A: 60 A
Verlustleistung Pd bei 25°C, W: 463 W
Ein-/Ausschaltzeit td(on)/td(off) bei 100-150°C, ns: 24/180
auf Bestellung: 20 St.
- 20 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.28 EUR |
| 10+ | 4.28 EUR |
| IGW30N60T Produktcode: 101922
zu Favoriten hinzufügen
Lieblingsprodukt
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auf Bestellung: 1 St.
- 1 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.6 EUR |
| AIKW30N60CTXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRENCH FS 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.16 EUR |
| 30+ | 8.81 EUR |
| 120+ | 7.41 EUR |
| AIKW30N60CTXKSA1 |
|
Hersteller: Infineon Technologies
IGBTs DISCRETES
IGBTs DISCRETES
auf Bestellung 266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.1 EUR |
| 10+ | 8.85 EUR |
| 100+ | 7.46 EUR |
| 480+ | 7.02 EUR |
| BIDNW30N60H3 |
|
Hersteller: Bourns
IGBTs IGBT Discrete 600V, 30A in TO-247N
IGBTs IGBT Discrete 600V, 30A in TO-247N
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.17 EUR |
| 10+ | 6.2 EUR |
| 100+ | 4.96 EUR |
| 600+ | 3.72 EUR |
| BIDW30N60T |
|
Hersteller: BOURNS
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3; Eoff: 0.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Technology: Field Stop; Trench
Turn-on time: 30ns
Turn-off switching energy: 0.45mJ
Turn-on switching energy: 1.85mJ
Gate charge: 76nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 60A; 230W; TO247-3; Eoff: 0.45mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 60A
Power dissipation: 230W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Technology: Field Stop; Trench
Turn-on time: 30ns
Turn-off switching energy: 0.45mJ
Turn-on switching energy: 1.85mJ
Gate charge: 76nC
auf Bestellung 399 Stücke:
Lieferzeit 14-21 Tag (e)
| BIDW30N60T |
|
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
Description: IGBT TRENCH FS 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.52 EUR |
| 30+ | 5.89 EUR |
| 120+ | 4.88 EUR |
| 510+ | 4.13 EUR |
| BIDW30N60T |
|
Hersteller: Bourns
IGBTs IGBT Discrete 600V, 30A in TO-247
IGBTs IGBT Discrete 600V, 30A in TO-247
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.9 EUR |
| 10+ | 5.93 EUR |
| 100+ | 4.86 EUR |
| 600+ | 4.16 EUR |
| 1200+ | 4.02 EUR |
| CT15Z-30N600-4 |
|
Hersteller: Challenge Electronics
Description: BUZZER ELEMENT 6KHZ 15MM
Packaging: Tray
Size / Dimension: 0.591" Dia (15.00mm)
Type: Standard
Operating Temperature: -20°C ~ 60°C
Capacitance @ Frequency: 14000pF @ 100Hz
Voltage - Input (Max): 30V p-p
Termination: None
Description: BUZZER ELEMENT 6KHZ 15MM
Packaging: Tray
Size / Dimension: 0.591" Dia (15.00mm)
Type: Standard
Operating Temperature: -20°C ~ 60°C
Capacitance @ Frequency: 14000pF @ 100Hz
Voltage - Input (Max): 30V p-p
Termination: None
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.64 EUR |
| 11+ | 1.99 EUR |
| 25+ | 1.8 EUR |
| 50+ | 1.65 EUR |
| 100+ | 1.54 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.2 EUR |
| DAMI330N60 |
Hersteller: DACO Semiconductor
Category: Transistor modules
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| FCH130N60 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 119 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 5 EUR |
| FCP130N60 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO220-3
Description: MOSFET N-CH 600V 28A TO220-3
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 6.52 EUR |
| FCP130N60 |
|
Hersteller: onsemi
MOSFETs N-Channel SuperFET II MOSFET
MOSFETs N-Channel SuperFET II MOSFET
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.59 EUR |
| 10+ | 6.75 EUR |
| 100+ | 6.15 EUR |
| 500+ | 5.76 EUR |
| FCP130N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.52 EUR |
| 10+ | 8.45 EUR |
| 50+ | 6.7 EUR |
| 100+ | 6.13 EUR |
| FGA30N60LSDTU |
|
Hersteller: Fairchild Semiconductor
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 96+ | 5.63 EUR |
| HGT1N30N60A4D |
|
Hersteller: Fairchild Semiconductor
Description: IGBT MOD 600V 96A 255W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MOD 600V 96A 255W SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 40.22 EUR |
| HGT4E30N60B3S |
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 9.77 EUR |
| HGT4E30N60C3S |
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 51+ | 10.47 EUR |
| HGTG30N60B3 |
|
Hersteller: Harris Corporation
Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
Description: IGBT 600V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 84+ | 6.99 EUR |
| HGTG30N60C3 |
|
Hersteller: Harris Corporation
Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT 600V 63A SUPER-247
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 109+ | 5.37 EUR |
| HGTG30N60C3D |
|
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Description: IGBT 600V 63A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 40+ | 14.66 EUR |
| IGA30N60H3XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
Description: IGBT TRENCH FS 600V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 149+ | 3.61 EUR |
| IGB30N60H3 |
|
Hersteller: Infineon Technologies
IGBTs 600v Hi-Speed SW IGBT
IGBTs 600v Hi-Speed SW IGBT
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.59 EUR |
| 10+ | 3.64 EUR |
| 100+ | 2.51 EUR |
| 500+ | 2.07 EUR |
| 1000+ | 1.83 EUR |
| IGB30N60H3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
auf Bestellung 574 Stücke:
Lieferzeit 14-21 Tag (e)
| IGB30N60H3ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.84 EUR |
| 2000+ | 1.73 EUR |
| 3000+ | 1.65 EUR |
| IGB30N60H3ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 4394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 3.59 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2 EUR |
| IGP30N60H3XKSA1 |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 5.47 EUR |
| IGW30N60H3 |
|
Hersteller: Infineon Technologies
IGBTs 600V HI SPEED SW IGBT
IGBTs 600V HI SPEED SW IGBT
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.95 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.17 EUR |
| 480+ | 2.64 EUR |
| 1200+ | 2.45 EUR |
| 2640+ | 2.31 EUR |
| IGW30N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW30N60H3FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 6475 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.02 EUR |
| 30+ | 4.43 EUR |
| 120+ | 3.63 EUR |
| 510+ | 3.05 EUR |
| 1020+ | 2.83 EUR |
| 2010+ | 2.67 EUR |
| 5010+ | 2.61 EUR |
| IGW30N60T |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 30A
IGBTs LOW LOSS IGBT TECH 600V 30A
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.54 EUR |
| 10+ | 4.16 EUR |
| 100+ | 3.8 EUR |
| 480+ | 3.17 EUR |
| 1200+ | 2.93 EUR |
| 2640+ | 2.76 EUR |
| IGW30N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW30N60TFKSA1 |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.57 EUR |
| IGW30N60TFKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.52 EUR |
| 30+ | 4.13 EUR |
| IGW30N60TPXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 1860 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 30+ | 2.64 EUR |
| 120+ | 2.13 EUR |
| 510+ | 1.75 EUR |
| 1020+ | 1.67 EUR |
| IGW30N60TPXKSA1 |
|
Hersteller: Infineon Technologies
IGBTs INDUSTRY
IGBTs INDUSTRY
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.57 EUR |
| 10+ | 2.67 EUR |
| 100+ | 2.12 EUR |
| 480+ | 1.76 EUR |
| 1200+ | 1.67 EUR |
| 2640+ | 1.61 EUR |
| 5040+ | 1.58 EUR |
| IKW30N60H3 |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.69 EUR |
| IKW30N60H3 |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.69 EUR |
| IKW30N60H3 |
|
Hersteller: Infineon Technologies
IGBTs 600V 30A 187W
IGBTs 600V 30A 187W
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.34 EUR |
| 10+ | 6.12 EUR |
| 100+ | 4.57 EUR |
| 480+ | 3.81 EUR |
| 1200+ | 3.53 EUR |
| 2640+ | 3.36 EUR |
| IKW30N60H3FKSA1 |
|
Hersteller: Infineon Technologies
IGBTs 600V 30A 187W
IGBTs 600V 30A 187W
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.69 EUR |
| 10+ | 4.82 EUR |
| 100+ | 4.33 EUR |
| 480+ | 3.75 EUR |
| 1200+ | 3.36 EUR |
| IKW30N60T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 45A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Technology: Field Stop; Trench
Pulsed collector current: 45A
Turn-on time: 23ns
Turn-off switching energy: 0.77mJ
Turn-on switching energy: 0.69mJ
Gate charge: 167nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 45A; 187W; TO247-3; Eoff: 0.77mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 45A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Technology: Field Stop; Trench
Pulsed collector current: 45A
Turn-on time: 23ns
Turn-off switching energy: 0.77mJ
Turn-on switching energy: 0.69mJ
Gate charge: 167nC
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N60T |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 30A
IGBTs LOW LOSS DuoPack 600V 30A
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.82 EUR |
| 10+ | 6.43 EUR |
| 100+ | 4.8 EUR |
| 480+ | 4 EUR |
| 1200+ | 3.71 EUR |
| 2640+ | 3.52 EUR |
| IKW30N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Turn-off time: 0.3µs
Mounting: THT
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 44ns
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Turn-off time: 0.3µs
Mounting: THT
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 44ns
Kind of package: tube
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N60TFKSA1 |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IKW30N60T TIKW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.81 EUR |
| IKW30N60TFKSA1 |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 30A
IGBTs LOW LOSS DuoPack 600V 30A
auf Bestellung 3053 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.98 EUR |
| 10+ | 5.01 EUR |
| 100+ | 4.13 EUR |
| 480+ | 3.53 EUR |
| IKW30N60TFKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.48 EUR |
| 30+ | 5.27 EUR |
| 120+ | 4.36 EUR |
| 510+ | 3.67 EUR |
| 1020+ | 3.43 EUR |
| IXFH30N60P |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
auf Bestellung 252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.31 EUR |
| 30+ | 14.67 EUR |
| 60+ | 13.53 EUR |
| 120+ | 12.57 EUR |
| IXFH30N60P |
|
Hersteller: IXYS
MOSFETs 600V 30A
MOSFETs 600V 30A
auf Bestellung 1709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.42 EUR |
| 10+ | 13.64 EUR |
| IXFR30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 166W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.25Ω
Gate charge: 85nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Power dissipation: 166W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.25Ω
Gate charge: 85nC
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| IXGH30N60C3D1 |
|
Hersteller: IXYS
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
Description: IGBT 600V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 16ns/42ns
Switching Energy: 270µJ (on), 90µJ (off)
Test Condition: 300V, 20A, 5Ohm, 15V
Gate Charge: 38 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 220 W
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.22 EUR |
| 30+ | 13.32 EUR |
| 120+ | 11.36 EUR |
| 510+ | 10.12 EUR |
| IXTH30N60L2 |
|
Hersteller: IXYS
MOSFETs 30 Amps 600V
MOSFETs 30 Amps 600V
auf Bestellung 4520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.89 EUR |
| 10+ | 27.14 EUR |
| IXTH30N60L2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 1063 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.24 EUR |
| 30+ | 27.47 EUR |
| 60+ | 25.6 EUR |
| 120+ | 24.01 EUR |
| 510+ | 23.6 EUR |
| IXTH30N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Features of semiconductor devices: standard power mosfet
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 0.24Ω
Reverse recovery time: 0.5µs
Mounting: THT
Power dissipation: 540W
Gate charge: 82nC
Polarisation: unipolar
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
| IXTH30N60P |
|
Hersteller: IXYS
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.55 EUR |
| 10+ | 13.55 EUR |
| IXTH30N60P |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5050 pF @ 25 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.19 EUR |
| 30+ | 14.59 EUR |
| 60+ | 13.45 EUR |
| 120+ | 12.5 EUR |
| IXTQ30N60L2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
Description: MOSFET N-CH 600V 30A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 15A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 335 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 41.86 EUR |
| 30+ | 26.51 EUR |
| 60+ | 24.68 EUR |
| 120+ | 23.15 EUR |
| IXTQ30N60L2 |
|
Hersteller: IXYS
MOSFETs 30 Amps 600V
MOSFETs 30 Amps 600V
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 42.05 EUR |
| 10+ | 26.05 EUR |
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