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40N10 LITEON 07+
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AM40N10-30D AM40N10-30D Analog Power Inc. datasheet.php?data1=DS_AM40N10-30D_1B_3 Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
19+0.94 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.54 EUR
2500+0.47 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5 BSC040N10NS5 Infineon Technologies Infineon_BSC040N10NS5_DataSheet_v02_04_EN-3360802.pdf MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 6005 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.66 EUR
10+2.66 EUR
100+2.11 EUR
250+2.04 EUR
5000+1.81 EUR
10000+1.39 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38 Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.78 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon_BSC040N10NS5_DataSheet_v02_04_EN-3360802.pdf MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 11867 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.17 EUR
10+2.85 EUR
100+1.95 EUR
500+1.88 EUR
1000+1.81 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38 Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30993 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.44 EUR
10+2.86 EUR
100+1.97 EUR
500+1.58 EUR
1000+1.46 EUR
2000+1.36 EUR
Mindestbestellmenge: 4
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BSC040N10NS5SCATMA1 BSC040N10NS5SCATMA1 Infineon Technologies Infineon_BSC040N10NS5SC_DataSheet_v02_01_EN-3360603.pdf MOSFETs TRENCH >=100V
auf Bestellung 6346 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.41 EUR
10+4.44 EUR
25+4.19 EUR
100+3.22 EUR
250+3.15 EUR
500+2.66 EUR
1000+2.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5SCATMA1 BSC040N10NS5SCATMA1 Infineon Technologies Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+2.44 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5SCATMA1 BSC040N10NS5SCATMA1 Infineon Technologies Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083 Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4944 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.83 EUR
10+4.50 EUR
100+3.17 EUR
500+2.60 EUR
1000+2.42 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3 G BSC440N10NS3 G Infineon Technologies Infineon_BSC440N10NS3_DS_v02_04_en-3360074.pdf MOSFETs N-Ch 100V 18A TDSON-8 OptiMOS 3
auf Bestellung 21940 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.62 EUR
10+1.17 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.52 EUR
5000+0.48 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3G Infineon Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3GATMA1 BSC440N10NS3GATMA1 Infineon Technologies BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56 Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
auf Bestellung 3059 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3 G BSZ440N10NS3 G Infineon Technologies Infineon_BSZ440N10NS3_G_DS_v02_01_EN-3360838.pdf MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 84283 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.50 EUR
10+1.12 EUR
100+0.76 EUR
500+0.64 EUR
5000+0.54 EUR
25000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 5911 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5911 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354 Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 18243 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354 Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies Infineon_BSZ440N10NS3_G_DS_v02_01_EN-3360838.pdf MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 57803 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.69 EUR
10+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.51 EUR
5000+0.45 EUR
10000+0.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BW-40N100W+ BW-40N100W+ Mini-Circuits BW-40N100W_2b-1700488.pdf Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
1+1277.00 EUR
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BW-40N100W+ BW-40N100W+ Mini-Circuits BW-40N100W+.pdf Description: FXD ATTEN /N /40DB 100W ROHS
Packaging: Box
Power (Watts): 100W
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
1+1263.64 EUR
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FDBL0240N100 FDBL0240N100 onsemi fdbl0240n100-d.pdf Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 19334 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.25 EUR
10+7.58 EUR
100+5.51 EUR
500+4.72 EUR
Mindestbestellmenge: 2
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FDBL0240N100 FDBL0240N100 onsemi / Fairchild fdbl0240n100-d.pdf MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 3499 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.88 EUR
10+7.39 EUR
100+5.42 EUR
500+4.88 EUR
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FDBL0240N100 FDBL0240N100 onsemi fdbl0240n100-d.pdf Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+4.72 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
FQA140N10 FQA140N10 ONSEMI fqa140n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.07 EUR
11+6.61 EUR
12+6.25 EUR
25+6.23 EUR
Mindestbestellmenge: 9
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FQA140N10 FQA140N10 ONSEMI fqa140n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.07 EUR
11+6.61 EUR
12+6.25 EUR
25+6.23 EUR
30+6.15 EUR
120+6.01 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQA140N10 FQA140N10 onsemi / Fairchild fqa140n10-d.pdf MOSFETs 100V N-Channel QFET
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.67 EUR
10+12.58 EUR
30+7.46 EUR
120+6.48 EUR
2520+6.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.34 EUR
30+7.76 EUR
120+6.54 EUR
Mindestbestellmenge: 2
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GT040N10T GT040N10T Goford Semiconductor GT040N10T.pdf Description: MOSFET N-CH 100V 140A 200W 4.5m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
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GT040N10T GT040N10T Goford Semiconductor GT040N10T.pdf Description: MOSFET N-CH 100V 140A 200W 4.5M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon_IAUZ40N10S5N130_DataSheet_v01_00_EN-1840552.pdf MOSFETs MOSFET_(75V 120V(
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IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
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IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
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IXFH140N10P IXFH140N10P IXYS media-3322022.pdf MOSFETs 140 Amps 100V 0.011 Rds
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IXFH140N10P IXFH140N10P Littelfuse Inc. littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321 Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
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IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
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IXFT140N10P IXFT140N10P IXYS media-3322022.pdf MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 157 Stücke:
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IXTT140N10P IXTT140N10P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXTT140N10P IXTT140N10P IXYS media-3319143.pdf MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 128 Stücke:
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MCG40N10YHE3-TP MCG40N10YHE3-TP Micro Commercial Co MCG40N10YHE3(DFN3333).pdf Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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MCG40N10YHE3-TP MCG40N10YHE3-TP Micro Commercial Co MCG40N10YHE3(DFN3333).pdf Description: N-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9862 Stücke:
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1000+0.65 EUR
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MCG40N10YHE3-TP MCG40N10YHE3-TP Micro Commercial Components (MCC) MCG40N10YHE3_DFN3333_-3132367.pdf MOSFETs
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MCW240N10Y-BP MCW240N10Y-BP Micro Commercial Co MCW240N10Y(TO-247).pdf Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
auf Bestellung 292 Stücke:
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NP40N10VDF-E1-AY NP40N10VDF-E1-AY Renesas Electronics Corporation RNCCS16975-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
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NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3765 Stücke:
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NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFWS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 201 Stücke:
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10+1.37 EUR
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NVMFWS040N10MCLT1G NVMFWS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 680 Stücke:
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8+2.25 EUR
13+1.43 EUR
100+0.94 EUR
500+0.74 EUR
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NVTFS040N10MCLTAG NVTFS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 552 Stücke:
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2+1.61 EUR
10+1.02 EUR
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NVTFS040N10MCLTAG NVTFS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1738 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
NVTFS040N10MCLTAG NVTFS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.44 EUR
Mindestbestellmenge: 1500
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NVTFWS040N10MCLTAG NVTFWS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.58 EUR
3000+0.52 EUR
7500+0.51 EUR
Mindestbestellmenge: 1500
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NVTFWS040N10MCLTAG NVTFWS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11769 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.18 EUR
13+1.38 EUR
100+0.91 EUR
500+0.71 EUR
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NVTFWS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.99 EUR
10+1.36 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.67 EUR
1500+0.57 EUR
3000+0.53 EUR
Mindestbestellmenge: 2
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NVTYS040N10MCLTWG NVTYS040N10MCLTWG onsemi nvtys040n10mcl-d.pdf Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+1.68 EUR
25+1.40 EUR
100+1.10 EUR
250+0.94 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 Panjit International Inc. Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
40N10
Hersteller: LITEON
07+
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
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AM40N10-30D datasheet.php?data1=DS_AM40N10-30D_1B_3
AM40N10-30D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
19+0.94 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.54 EUR
2500+0.47 EUR
Mindestbestellmenge: 13
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BSC040N10NS5 Infineon_BSC040N10NS5_DataSheet_v02_04_EN-3360802.pdf
BSC040N10NS5
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 6005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.66 EUR
10+2.66 EUR
100+2.11 EUR
250+2.04 EUR
5000+1.81 EUR
10000+1.39 EUR
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BSC040N10NS5ATMA1 Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.78 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5ATMA1 Infineon_BSC040N10NS5_DataSheet_v02_04_EN-3360802.pdf
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 11867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.17 EUR
10+2.85 EUR
100+1.95 EUR
500+1.88 EUR
1000+1.81 EUR
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BSC040N10NS5ATMA1 Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30993 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+2.86 EUR
100+1.97 EUR
500+1.58 EUR
1000+1.46 EUR
2000+1.36 EUR
Mindestbestellmenge: 4
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BSC040N10NS5SCATMA1 Infineon_BSC040N10NS5SC_DataSheet_v02_01_EN-3360603.pdf
BSC040N10NS5SCATMA1
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
auf Bestellung 6346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.41 EUR
10+4.44 EUR
25+4.19 EUR
100+3.22 EUR
250+3.15 EUR
500+2.66 EUR
1000+2.50 EUR
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BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
BSC040N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+2.44 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
BSC040N10NS5SCATMA1 Infineon-BSC040N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7dd8030083
BSC040N10NS5SCATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4944 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
10+4.50 EUR
100+3.17 EUR
500+2.60 EUR
1000+2.42 EUR
Mindestbestellmenge: 3
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BSC440N10NS3 G Infineon_BSC440N10NS3_DS_v02_04_en-3360074.pdf
BSC440N10NS3 G
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TDSON-8 OptiMOS 3
auf Bestellung 21940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.62 EUR
10+1.17 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.52 EUR
5000+0.48 EUR
Mindestbestellmenge: 2
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BSC440N10NS3G
Hersteller: Infineon
Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSC440N10NS3GATMA1 BSC440N10NS3+Rev2.3.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432239cccd0122604520d47f56
BSC440N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
auf Bestellung 3059 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
14+1.29 EUR
100+0.85 EUR
500+0.66 EUR
1000+0.60 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
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BSZ440N10NS3 G Infineon_BSZ440N10NS3_G_DS_v02_01_EN-3360838.pdf
BSZ440N10NS3 G
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 84283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.50 EUR
10+1.12 EUR
100+0.76 EUR
500+0.64 EUR
5000+0.54 EUR
25000+0.52 EUR
Mindestbestellmenge: 2
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BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 5911 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
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BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5911 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
39+1.84 EUR
68+1.05 EUR
102+0.71 EUR
107+0.67 EUR
1000+0.66 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354
BSZ440N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 18243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BSZ440N10NS3GATMA1 BSZ440N10NS3+Rev1.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304320896aa20120c32dbf312354
BSZ440N10NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
Mindestbestellmenge: 5000
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BSZ440N10NS3GATMA1 Infineon_BSZ440N10NS3_G_DS_v02_01_EN-3360838.pdf
BSZ440N10NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 57803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.69 EUR
10+1.20 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.51 EUR
5000+0.45 EUR
10000+0.44 EUR
Mindestbestellmenge: 2
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BW-40N100W+ BW-40N100W_2b-1700488.pdf
BW-40N100W+
Hersteller: Mini-Circuits
Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1277.00 EUR
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BW-40N100W+ BW-40N100W+.pdf
BW-40N100W+
Hersteller: Mini-Circuits
Description: FXD ATTEN /N /40DB 100W ROHS
Packaging: Box
Power (Watts): 100W
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1263.64 EUR
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FDBL0240N100 fdbl0240n100-d.pdf
FDBL0240N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 19334 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.25 EUR
10+7.58 EUR
100+5.51 EUR
500+4.72 EUR
Mindestbestellmenge: 2
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FDBL0240N100 fdbl0240n100-d.pdf
FDBL0240N100
Hersteller: onsemi / Fairchild
MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 3499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.88 EUR
10+7.39 EUR
100+5.42 EUR
500+4.88 EUR
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FDBL0240N100 fdbl0240n100-d.pdf
FDBL0240N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.72 EUR
Mindestbestellmenge: 2000
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.07 EUR
11+6.61 EUR
12+6.25 EUR
25+6.23 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.07 EUR
11+6.61 EUR
12+6.25 EUR
25+6.23 EUR
30+6.15 EUR
120+6.01 EUR
Mindestbestellmenge: 9
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.67 EUR
10+12.58 EUR
30+7.46 EUR
120+6.48 EUR
2520+6.12 EUR
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.34 EUR
30+7.76 EUR
120+6.54 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
GT040N10T GT040N10T.pdf
GT040N10T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 140A 200W 4.5m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.33 EUR
Mindestbestellmenge: 1000
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GT040N10T GT040N10T.pdf
GT040N10T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 140A 200W 4.5M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.03 EUR
10+3.27 EUR
Mindestbestellmenge: 4
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
IAUZ40N10S5L120ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.90 EUR
10+1.84 EUR
100+1.24 EUR
500+0.98 EUR
1000+0.89 EUR
2000+0.82 EUR
Mindestbestellmenge: 7
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.74 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
2000+0.82 EUR
Mindestbestellmenge: 7
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IAUZ40N10S5N130ATMA1 Infineon_IAUZ40N10S5N130_DataSheet_v01_00_EN-1840552.pdf
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 19536 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.07 EUR
10+1.06 EUR
100+0.97 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.04 EUR
10+7.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.04 EUR
10+7.48 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH140N10P media-3322022.pdf
IXFH140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 2018 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.24 EUR
10+13.78 EUR
30+9.15 EUR
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IXFH140N10P littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321
IXFH140N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.59 EUR
30+9.77 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.17 EUR
9+8.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.17 EUR
9+8.41 EUR
30+8.28 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFT140N10P media-3322022.pdf
IXFT140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.67 EUR
10+18.39 EUR
30+17.12 EUR
60+16.76 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTT140N10P littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d
IXTT140N10P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.56 EUR
30+10.21 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXTT140N10P media-3319143.pdf
IXTT140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.46 EUR
10+14.75 EUR
30+12.18 EUR
120+11.40 EUR
270+10.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MCG40N10YHE3-TP MCG40N10YHE3(DFN3333).pdf
MCG40N10YHE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.52 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
MCG40N10YHE3-TP MCG40N10YHE3(DFN3333).pdf
MCG40N10YHE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
13+1.39 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
2000+0.60 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MCG40N10YHE3-TP MCG40N10YHE3_DFN3333_-3132367.pdf
MCG40N10YHE3-TP
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.49 EUR
10+1.31 EUR
100+0.89 EUR
500+0.75 EUR
1000+0.64 EUR
2500+0.60 EUR
5000+0.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MCW240N10Y-BP MCW240N10Y(TO-247).pdf
MCW240N10Y-BP
Hersteller: Micro Commercial Co
Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
10+5.36 EUR
25+4.61 EUR
100+3.76 EUR
250+3.34 EUR
Mindestbestellmenge: 3
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NP40N10VDF-E1-AY RNCCS16975-1.pdf?t.download=true&u=5oefqw
NP40N10VDF-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
580+0.88 EUR
Mindestbestellmenge: 580
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 2138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.76 EUR
10+1.10 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.55 EUR
1500+0.47 EUR
3000+0.40 EUR
Mindestbestellmenge: 2
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.12 EUR
100+0.73 EUR
500+0.57 EUR
Mindestbestellmenge: 10
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.49 EUR
3000+0.41 EUR
Mindestbestellmenge: 1500
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NVMFWS040N10MCLT1G nvmfs040n10mcl-d.pdf
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.04 EUR
10+1.37 EUR
100+0.92 EUR
500+0.73 EUR
1000+0.68 EUR
1500+0.60 EUR
3000+0.55 EUR
Mindestbestellmenge: 2
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NVMFWS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFWS040N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
13+1.43 EUR
100+0.94 EUR
500+0.74 EUR
Mindestbestellmenge: 8
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFS040N10MCLTAG
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 552 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.61 EUR
10+1.02 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.52 EUR
1500+0.45 EUR
3000+0.37 EUR
Mindestbestellmenge: 2
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFS040N10MCLTAG
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.06 EUR
100+0.70 EUR
500+0.54 EUR
Mindestbestellmenge: 11
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFS040N10MCLTAG
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.44 EUR
Mindestbestellmenge: 1500
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NVTFWS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFWS040N10MCLTAG
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.58 EUR
3000+0.52 EUR
7500+0.51 EUR
Mindestbestellmenge: 1500
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NVTFWS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFWS040N10MCLTAG
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.38 EUR
100+0.91 EUR
500+0.71 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
NVTFWS040N10MCLTAG nvtfs040n10mcl-d.pdf
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.36 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.67 EUR
1500+0.57 EUR
3000+0.53 EUR
Mindestbestellmenge: 2
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NVTYS040N10MCLTWG nvtys040n10mcl-d.pdf
NVTYS040N10MCLTWG
Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.73 EUR
11+1.68 EUR
25+1.40 EUR
100+1.10 EUR
250+0.94 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: Panjit International Inc.
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.66 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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