Suchergebnisse für "40N10" : > 60

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40N10 40N10 GOODWORK 1779680931417944.pdf Description: 100V40A20m@10V23m@4.5V TO-252
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.31 EUR
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AM40N10-30D AM40N10-30D Analog Power Inc. datasheet.php?part=AM40N10-30D Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
11+2.03 EUR
100+1.83 EUR
500+1.43 EUR
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BSC040N10NS5 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100A; Idm: 400A; automotive industry
Type of transistor: N-MOSFET
Drain current: 100A
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 58nC
Application: automotive industry
auf Bestellung 4635 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 21 Stücke
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38 Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.65 EUR
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies infineon_bsc040n10ns5_datasheet_en.pdf MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 39719 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.11 EUR
10+3.28 EUR
100+2.39 EUR
500+2.07 EUR
1000+1.95 EUR
2500+1.92 EUR
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BSC040N10NS5ATMA1 BSC040N10NS5ATMA1 Infineon Technologies Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38 Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.78 EUR
10+3.74 EUR
50+2.87 EUR
100+2.58 EUR
500+2.09 EUR
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BSC440N10NS3G BSC440N10NS3G Infineon TBSC440n10ns3_INFINEON_0001.pdf Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.32 EUR
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BSZ440N10NS3 G INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 72A; 29W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 72A
Power dissipation: 29W
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 9.1nC
Kind of channel: enhancement
Technology: OptiMOS™
Application: automotive industry
auf Bestellung 7700 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 112 Stücke
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 INFINEON TECHNOLOGIES BSZ440N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 67 Stücke:
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BSZ440N10NS3GATMA1 BSZ440N10NS3GATMA1 Infineon Technologies infineon_bsz440n10ns3_g_ds_en.pdf MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.83 EUR
10+1.57 EUR
100+1.17 EUR
500+0.9 EUR
1000+0.84 EUR
5000+0.63 EUR
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BW-40N100W+ BW-40N100W+ Mini-Circuits BW_40N100W.pdf Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+1806.34 EUR
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BW-40N100W+ BW-40N100W+ Mini-Circuits BW-40N100W+.pdf Description: FXD ATTEN /N /40DB 100W ROHS
Power (Watts): 100W
Packaging: Box
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+1728.99 EUR
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DI040N10D1-AQ DI040N10D1-AQ Diotec Semiconductor di040n10d1-aq.pdf Description: MOSFET, DPAK, N, 100V, 40A, 17M,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.34 EUR
15+1.48 EUR
50+1.09 EUR
100+0.98 EUR
500+0.76 EUR
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DI040N10D1-AQ DI040N10D1-AQ Diotec Semiconductor di040n10d1-aq.pdf MOSFETs MOSFET, DPAK, N, 100V, 40A, 17m, 175C, AEC-Q101
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.18 EUR
10+1.11 EUR
100+0.96 EUR
500+0.76 EUR
2500+0.62 EUR
5000+0.55 EUR
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FDBL0240N100 FDBL0240N100 onsemi FDBL0240N100-D.pdf Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 8743 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.04 EUR
10+10.19 EUR
50+8.1 EUR
100+7.44 EUR
500+6.78 EUR
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FDBL0240N100 FDBL0240N100 onsemi FDBL0240N100-D.pdf Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+5.55 EUR
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FDBL0240N100 FDBL0240N100 onsemi FDBL0240N100-D.pdf MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 1582 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.05 EUR
10+8.16 EUR
100+7.47 EUR
500+6.83 EUR
1000+6.45 EUR
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FQA140N10 FQA140N10 ONSEMI fqa140n10-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
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FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf MOSFETs 100V N-Channel QFET
auf Bestellung 3091 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.37 EUR
10+8.23 EUR
120+8.1 EUR
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FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 1062 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.29 EUR
30+8.95 EUR
60+8.19 EUR
120+7.56 EUR
510+6.96 EUR
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GT040N10M GT040N10M Goford Semiconductor GT040N10M.pdf Description: MOSFET N-CH 100V 140A 200W TO-26
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.95 EUR
10+3.87 EUR
50+2.96 EUR
100+2.68 EUR
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies infineon_iauz40n10s5l120_datasheet_en.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 9745 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.33 EUR
10+1.58 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.07 EUR
2500+0.99 EUR
5000+0.92 EUR
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IAUZ40N10S5L120ATMA1 IAUZ40N10S5L120ATMA1 Infineon Technologies Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217 Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.11 EUR
50+1.58 EUR
100+1.4 EUR
500+1.11 EUR
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.84 EUR
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies infineon_iauz40n10s5n130_datasheet_en.pdf MOSFETs MOSFET_(75V 120V(
auf Bestellung 7517 Stücke:
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2+3.33 EUR
10+1.58 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.05 EUR
2500+0.95 EUR
5000+0.89 EUR
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IAUZ40N10S5N130ATMA1 IAUZ40N10S5N130ATMA1 Infineon Technologies Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10873 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.11 EUR
50+1.58 EUR
100+1.4 EUR
500+1.11 EUR
Mindestbestellmenge: 7 Stücke
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.63 EUR
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon_isc040n10nm7_datasheet_en.pdf MOSFETs OptiMOS 7 PowerTransistor, 100 V
auf Bestellung 5316 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.65 EUR
10+2.87 EUR
100+2.51 EUR
500+2.03 EUR
1000+1.96 EUR
2500+1.93 EUR
5000+1.76 EUR
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 9723 Stücke:
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IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXFH140N10P IXFH140N10P IXYS littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321 Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXFH140N10P IXFH140N10P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_140N10P_Datasheet.PDF MOSFETs 140 Amps 100V 0.011 Rds
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IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
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IXFT140N10P IXFT140N10P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_140N10P_Datasheet.PDF MOSFETs 140 Amps 100V 0.011 Rds
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IXTT140N10P IXTT140N10P IXYS littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXTT140N10P IXTT140N10P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_140N10P_Datasheet.PDF MOSFETs 140 Amps 100V 0.011 Rds
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NP40N10VDF-E1-AY NP40N10VDF-E1-AY Renesas Electronics Corporation RNCCS16975-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
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NVMFD040N10MCLT1G NVMFD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL DUAL
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NVMFS040N10MCLT1G NVMFS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL
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NVMFWD040N10MCLT1G NVMFWD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFWD040N10MCLT1G NVMFWD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL DUAL
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NVMFWD040N10MCLT1G NVMFWD040N10MCLT1G onsemi nvmfd040n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
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NVMFWS040N10MCLT1G onsemi nvmfs040n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL
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NVTFS040N10MCLTAG NVTFS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf MOSFETs PTNG 100V LL U8FL
auf Bestellung 5903 Stücke:
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NVTFWS040N10MCLTAG NVTFWS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 333 Stücke:
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NVTFWS040N10MCLTAG onsemi nvtfs040n10mcl-d.pdf MOSFETs PTNG 100V LL U8FL
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 Panjit International Inc. Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+1.58 EUR
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 Panjit International Inc. Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 5287 Stücke:
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 Panjit PSMQC040N10NS2.pdf MOSFETs 100V 4.4mohm Excellect low FOM MOSFET
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RBA40N10EANS-5UA11#HB0 RBA40N10EANS-5UA11#HB0 Renesas Electronics Corporation rba40n10eans-5ua11-datasheet?queryID=e137a6bb33157840ba6d77f1dfebc5ed Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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3000+0.86 EUR
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RBA40N10EANS-5UA11#HB0 RBA40N10EANS-5UA11#HB0 Renesas Electronics r07ds1622ej0101_rba40n10eans_5ua11.pdf MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg
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RBA40N10EANS-5UA11#HB0 RBA40N10EANS-5UA11#HB0 Renesas Electronics Corporation rba40n10eans-5ua11-datasheet?queryID=e137a6bb33157840ba6d77f1dfebc5ed Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
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RF1S40N10LE RF1S40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 1368 Stücke:
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RF1S40N10SM Harris Corporation HRISC016-2.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
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RFG40N10 RFG40N10 Harris Corporation HRISS995-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 752 Stücke:
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RFG40N10 RFG40N10 Fairchild Semiconductor HRISS995-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 1387 Stücke:
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RFG40N10LE RFG40N10LE Harris Corporation Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
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RFIS40N10LE RFIS40N10LE Harris Corporation Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
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178+3.03 EUR
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SQD40N10-25_GE3 SQD40N10-25_GE3 Vishay / Siliconix sqd40n10-25.pdf MOSFETs RECOMMENDED ALT SQD7
auf Bestellung 1881 Stücke:
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SQD40N10-25_GE3 SQD40N10-25_GE3 Vishay Siliconix sqd40n10-25.pdf Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1868 Stücke:
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10+9.04 EUR
50+7.18 EUR
100+6.57 EUR
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40N10 1779680931417944.pdf
40N10
Hersteller: GOODWORK
Description: 100V40A20m@10V23m@4.5V TO-252
auf Bestellung 30000 Stücke:
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AnzahlPrivatkunde
2500+0.31 EUR
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AM40N10-30D datasheet.php?part=AM40N10-30D
AM40N10-30D
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+2.03 EUR
100+1.83 EUR
500+1.43 EUR
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BSC040N10NS5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100A; Idm: 400A; automotive industry
Type of transistor: N-MOSFET
Drain current: 100A
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 400A
Gate charge: 58nC
Application: automotive industry
auf Bestellung 4635 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 21 Stücke
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BSC040N10NS5ATMA1 Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.65 EUR
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BSC040N10NS5ATMA1 infineon_bsc040n10ns5_datasheet_en.pdf
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 39719 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.11 EUR
10+3.28 EUR
100+2.39 EUR
500+2.07 EUR
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2500+1.92 EUR
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BSC040N10NS5ATMA1 Infineon-BSC040N10NS5-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a0fbcee2e6b38
BSC040N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.78 EUR
10+3.74 EUR
50+2.87 EUR
100+2.58 EUR
500+2.09 EUR
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BSC440N10NS3G TBSC440n10ns3_INFINEON_0001.pdf
BSC440N10NS3G
Hersteller: Infineon
Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+3.32 EUR
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BSZ440N10NS3 G
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 72A; 29W; automotive industry
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Pulsed drain current: 72A
Power dissipation: 29W
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 9.1nC
Kind of channel: enhancement
Technology: OptiMOS™
Application: automotive industry
auf Bestellung 7700 Stücke:
Lieferzeit 14-21 Tag (e)
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BSZ440N10NS3GATMA1 BSZ440N10NS3G-DTE.pdf
BSZ440N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 29W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
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BSZ440N10NS3GATMA1 infineon_bsz440n10ns3_g_ds_en.pdf
BSZ440N10NS3GATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.83 EUR
10+1.57 EUR
100+1.17 EUR
500+0.9 EUR
1000+0.84 EUR
5000+0.63 EUR
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BW-40N100W+ BW_40N100W.pdf
BW-40N100W+
Hersteller: Mini-Circuits
Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1806.34 EUR
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BW-40N100W+ BW-40N100W+.pdf
BW-40N100W+
Hersteller: Mini-Circuits
Description: FXD ATTEN /N /40DB 100W ROHS
Power (Watts): 100W
Packaging: Box
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+1728.99 EUR
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DI040N10D1-AQ di040n10d1-aq.pdf
DI040N10D1-AQ
Hersteller: Diotec Semiconductor
Description: MOSFET, DPAK, N, 100V, 40A, 17M,
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 28A, 10V
Power Dissipation (Max): 37.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1192 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2163 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.34 EUR
15+1.48 EUR
50+1.09 EUR
100+0.98 EUR
500+0.76 EUR
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DI040N10D1-AQ di040n10d1-aq.pdf
DI040N10D1-AQ
Hersteller: Diotec Semiconductor
MOSFETs MOSFET, DPAK, N, 100V, 40A, 17m, 175C, AEC-Q101
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.18 EUR
10+1.11 EUR
100+0.96 EUR
500+0.76 EUR
2500+0.62 EUR
5000+0.55 EUR
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FDBL0240N100 FDBL0240N100-D.pdf
FDBL0240N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 8743 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.04 EUR
10+10.19 EUR
50+8.1 EUR
100+7.44 EUR
500+6.78 EUR
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FDBL0240N100 FDBL0240N100-D.pdf
FDBL0240N100
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+5.55 EUR
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FDBL0240N100 FDBL0240N100-D.pdf
FDBL0240N100
Hersteller: onsemi
MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 1582 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+15.05 EUR
10+8.16 EUR
100+7.47 EUR
500+6.83 EUR
1000+6.45 EUR
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 99A
Pulsed drain current: 560A
Power dissipation: 375W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 285nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
MOSFETs 100V N-Channel QFET
auf Bestellung 3091 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+15.37 EUR
10+8.23 EUR
120+8.1 EUR
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 1062 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.29 EUR
30+8.95 EUR
60+8.19 EUR
120+7.56 EUR
510+6.96 EUR
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GT040N10M GT040N10M.pdf
GT040N10M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 140A 200W TO-26
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.95 EUR
10+3.87 EUR
50+2.96 EUR
100+2.68 EUR
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IAUZ40N10S5L120ATMA1 infineon_iauz40n10s5l120_datasheet_en.pdf
IAUZ40N10S5L120ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 9745 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.33 EUR
10+1.58 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.07 EUR
2500+0.99 EUR
5000+0.92 EUR
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IAUZ40N10S5L120ATMA1 Infineon-IAUZ40N10S5L120-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd443ce0217
IAUZ40N10S5L120ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 4993 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.11 EUR
50+1.58 EUR
100+1.4 EUR
500+1.11 EUR
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.84 EUR
Mindestbestellmenge: 5000 Stücke
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IAUZ40N10S5N130ATMA1 infineon_iauz40n10s5n130_datasheet_en.pdf
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
auf Bestellung 7517 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.33 EUR
10+1.58 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.05 EUR
2500+0.95 EUR
5000+0.89 EUR
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IAUZ40N10S5N130ATMA1 Infineon-IAUZ40N10S5N130-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a62b6cf0ddb
IAUZ40N10S5N130ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 10873 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.11 EUR
50+1.58 EUR
100+1.4 EUR
500+1.11 EUR
Mindestbestellmenge: 7 Stücke
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Hersteller: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.63 EUR
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ISC040N10NM7ATMA1 infineon_isc040n10nm7_datasheet_en.pdf
ISC040N10NM7ATMA1
Hersteller: Infineon Technologies
MOSFETs OptiMOS 7 PowerTransistor, 100 V
auf Bestellung 5316 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.65 EUR
10+2.87 EUR
100+2.51 EUR
500+2.03 EUR
1000+1.96 EUR
2500+1.93 EUR
5000+1.76 EUR
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Hersteller: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
auf Bestellung 9723 Stücke:
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4+5.74 EUR
10+3.71 EUR
50+2.84 EUR
100+2.56 EUR
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IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Technology: HiPerFET™; Polar™
Kind of package: tube
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IXFH140N10P littelfuse-discrete-mosfets-ixf-140n10p-datasheet?assetguid=97925773-3f21-4a1c-bdc7-735f6c5e0321
IXFH140N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 2893 Stücke:
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30+13.67 EUR
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IXFH140N10P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_140N10P_Datasheet.PDF
IXFH140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
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IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Polarisation: unipolar
Kind of package: tube
auf Bestellung 10 Stücke:
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IXFT140N10P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_140N10P_Datasheet.PDF
IXFT140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
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IXTT140N10P littelfuse-discrete-mosfets-ixt-140n10p-datasheet?assetguid=02b85593-79a6-4f7b-9534-ebf8febab82d
IXTT140N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 600 Stücke:
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IXTT140N10P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXT_140N10P_Datasheet.PDF
IXTT140N10P
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 308 Stücke:
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1+26.49 EUR
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NP40N10VDF-E1-AY RNCCS16975-1.pdf?t.download=true&u=5oefqw
NP40N10VDF-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Grade: Automotive
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
395+1.37 EUR
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NVMFD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFD040N10MCLT1G
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 6000 Stücke:
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1+4.24 EUR
10+2.4 EUR
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NVMFS040N10MCLT1G nvmfs040n10mcl-d.pdf
NVMFS040N10MCLT1G
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL
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2+2.53 EUR
10+1.27 EUR
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NVMFWD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFWD040N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
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6+3.77 EUR
10+2.4 EUR
50+1.81 EUR
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NVMFWD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFWD040N10MCLT1G
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL DUAL
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1+3.8 EUR
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NVMFWD040N10MCLT1G nvmfd040n10mcl-d.pdf
NVMFWD040N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
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1500+1.12 EUR
3000+1.05 EUR
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NVMFWS040N10MCLT1G nvmfs040n10mcl-d.pdf
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL
auf Bestellung 57 Stücke:
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2+3.17 EUR
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NVTFS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFS040N10MCLTAG
Hersteller: onsemi
MOSFETs PTNG 100V LL U8FL
auf Bestellung 5903 Stücke:
Lieferzeit 375-379 Tag (e)
AnzahlPrivatkunde
2+2.15 EUR
10+1.19 EUR
100+0.86 EUR
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NVTFWS040N10MCLTAG nvtfs040n10mcl-d.pdf
NVTFWS040N10MCLTAG
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 333 Stücke:
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8+2.68 EUR
13+1.68 EUR
50+1.25 EUR
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NVTFWS040N10MCLTAG nvtfs040n10mcl-d.pdf
Hersteller: onsemi
MOSFETs PTNG 100V LL U8FL
auf Bestellung 203 Stücke:
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2+2.68 EUR
10+1.26 EUR
100+1.12 EUR
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1500+0.67 EUR
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PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: Panjit International Inc.
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 3000 Stücke:
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3000+1.58 EUR
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PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: Panjit International Inc.
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 5287 Stücke:
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5+4.82 EUR
10+3.09 EUR
50+2.36 EUR
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PSMQC040N10NS2_R2_00601 PSMQC040N10NS2.pdf
PSMQC040N10NS2_R2_00601
Hersteller: Panjit
MOSFETs 100V 4.4mohm Excellect low FOM MOSFET
auf Bestellung 5863 Stücke:
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1+4.84 EUR
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RBA40N10EANS-5UA11#HB0 rba40n10eans-5ua11-datasheet?queryID=e137a6bb33157840ba6d77f1dfebc5ed
RBA40N10EANS-5UA11#HB0
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
3000+0.86 EUR
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RBA40N10EANS-5UA11#HB0 r07ds1622ej0101_rba40n10eans_5ua11.pdf
RBA40N10EANS-5UA11#HB0
Hersteller: Renesas Electronics
MOSFETs Auto. MOS REXFET-1 100V 11.1mohm 3x3pkg
auf Bestellung 1940 Stücke:
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1+3.42 EUR
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RBA40N10EANS-5UA11#HB0 rba40n10eans-5ua11-datasheet?queryID=e137a6bb33157840ba6d77f1dfebc5ed
RBA40N10EANS-5UA11#HB0
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A SO8-FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 28µA
Supplier Device Package: μSO8-FL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
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50+1.52 EUR
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RF1S40N10LE
RF1S40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 1368 Stücke:
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186+2.89 EUR
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RF1S40N10SM HRISC016-2.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A
Supplier Device Package: TO-263AB
Part Status: Active
Drain to Source Voltage (Vdss): 100 V
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185+2.93 EUR
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RFG40N10 HRISS995-1.pdf?t.download=true&u=5oefqw
RFG40N10
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 752 Stücke:
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AnzahlPrivatkunde
174+3.11 EUR
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RFG40N10 HRISS995-1.pdf?t.download=true&u=5oefqw
RFG40N10
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 40A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 20 V
auf Bestellung 1387 Stücke:
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AnzahlPrivatkunde
174+3.11 EUR
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RFG40N10LE
RFG40N10LE
Hersteller: Harris Corporation
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 489 Stücke:
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AnzahlPrivatkunde
168+3.21 EUR
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RFIS40N10LE
RFIS40N10LE
Hersteller: Harris Corporation
Description: MOSFET N-CH 100V 40A
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
178+3.03 EUR
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SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SQD7
auf Bestellung 1881 Stücke:
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AnzahlPrivatkunde
1+13.45 EUR
10+7.22 EUR
100+6.62 EUR
500+6.33 EUR
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SQD40N10-25_GE3 sqd40n10-25.pdf
SQD40N10-25_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1868 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.4 EUR
10+9.04 EUR
50+7.18 EUR
100+6.57 EUR
500+6.27 EUR
Mindestbestellmenge: 2 Stücke
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