Suchergebnisse für "40N10" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Im Einkaufswagen Stück im Wert von UAH
Mindestbestellmenge: 13
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5000
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 9
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 39
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 39
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 9
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 9
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 1000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 4
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 5000
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 8
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 580
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 10
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 1500
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 8
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 11
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 1500
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 1500
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 9
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 2
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 7
Im Einkaufswagen
Stück im Wert von UAH
Mindestbestellmenge: 3000
Im Einkaufswagen
Stück im Wert von UAH
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
40N10 | LITEON | 07+ |
auf Bestellung 100000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
![]() |
AM40N10-30D | Analog Power Inc. |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5 | Infineon Technologies |
![]() |
auf Bestellung 6005 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5ATMA1 | Infineon Technologies |
![]() |
auf Bestellung 11867 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-TDSON-8-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
auf Bestellung 30993 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5SCATMA1 | Infineon Technologies |
![]() |
auf Bestellung 6346 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5SCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC040N10NS5SCATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 95µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V |
auf Bestellung 4944 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSC440N10NS3 G | Infineon Technologies |
![]() |
auf Bestellung 21940 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
BSC440N10NS3G | Infineon |
Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
![]() |
BSC440N10NS3GATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V |
auf Bestellung 3059 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3 G | Infineon Technologies |
![]() |
auf Bestellung 84283 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PG-TSDSON-8 Mounting: SMD Kind of channel: enhancement Drain current: 18A On-state resistance: 44mΩ Power dissipation: 29W Technology: OptiMOS™ 3 Gate-source voltage: ±20V Drain-source voltage: 100V |
auf Bestellung 5911 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Case: PG-TSDSON-8 Mounting: SMD Kind of channel: enhancement Drain current: 18A On-state resistance: 44mΩ Power dissipation: 29W Technology: OptiMOS™ 3 Gate-source voltage: ±20V Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5911 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3GATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V |
auf Bestellung 18243 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3GATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 12µA Supplier Device Package: PG-TSDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BSZ440N10NS3GATMA1 | Infineon Technologies |
![]() |
auf Bestellung 57803 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BW-40N100W+ | Mini-Circuits |
![]() |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
BW-40N100W+ | Mini-Circuits |
![]() Packaging: Box Power (Watts): 100W Package / Case: N-Type In-Line Module Attenuation Value: 40dB Part Status: Active Impedance: 50 Ohms Frequency Range: 0 Hz ~ 4 GHz |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FDBL0240N100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V |
auf Bestellung 19334 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FDBL0240N100 | onsemi / Fairchild |
![]() |
auf Bestellung 3499 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FDBL0240N100 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V Power Dissipation (Max): 3.5W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQA140N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Case: TO3PN Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: 99A On-state resistance: 10mΩ Power dissipation: 375W Gate charge: 285nC Gate-source voltage: ±25V Pulsed drain current: 560A Drain-source voltage: 100V |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
FQA140N10 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN Type of transistor: N-MOSFET Polarisation: unipolar Case: TO3PN Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: 99A On-state resistance: 10mΩ Power dissipation: 375W Gate charge: 285nC Gate-source voltage: ±25V Pulsed drain current: 560A Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
FQA140N10 | onsemi / Fairchild |
![]() |
auf Bestellung 2183 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
FQA140N10 | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
GT040N10T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
GT040N10T | Goford Semiconductor |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IAUZ40N10S5L120ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tj) Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4228 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IAUZ40N10S5N130ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IAUZ40N10S5N130ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TSDSON-8-33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17996 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IAUZ40N10S5N130ATMA1 | Infineon Technologies |
![]() |
auf Bestellung 19536 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXFH140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: 140A On-state resistance: 11mΩ Power dissipation: 600W Gate charge: 155nC Technology: HiPerFET™; Polar™ Drain-source voltage: 100V |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IXFH140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO247-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Drain current: 140A On-state resistance: 11mΩ Power dissipation: 600W Gate charge: 155nC Technology: HiPerFET™; Polar™ Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 31 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
IXFH140N10P | IXYS |
![]() |
auf Bestellung 2018 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXFH140N10P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXFT140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhancement Drain current: 140A On-state resistance: 11mΩ Power dissipation: 600W Gate charge: 155nC Drain-source voltage: 100V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
IXFT140N10P | IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhancement Drain current: 140A On-state resistance: 11mΩ Power dissipation: 600W Gate charge: 155nC Drain-source voltage: 100V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
![]() |
IXFT140N10P | IXYS |
![]() |
auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXTT140N10P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
IXTT140N10P | IXYS |
![]() |
auf Bestellung 128 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MCG40N10YHE3-TP | Micro Commercial Co |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MCG40N10YHE3-TP | Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V Power Dissipation (Max): 43W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN3333 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9862 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
MCG40N10YHE3-TP | Micro Commercial Components (MCC) |
![]() |
auf Bestellung 4842 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
MCW240N10Y-BP | Micro Commercial Co |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V Power Dissipation (Max): 312.5W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V |
auf Bestellung 292 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NP40N10VDF-E1-AY | Renesas Electronics Corporation |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 1.2W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (MP-3ZP) Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1559 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVMFS040N10MCLT1G | onsemi |
![]() |
auf Bestellung 2138 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVMFS040N10MCLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 3765 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVMFS040N10MCLT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
NVMFWS040N10MCLT1G | onsemi |
![]() |
auf Bestellung 201 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
NVMFWS040N10MCLT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.5W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS040N10MCLTAG | onsemi |
![]() |
auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS040N10MCLTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFS040N10MCLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFWS040N10MCLTAG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
NVTFWS040N10MCLTAG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 3V @ 26µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 11769 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
NVTFWS040N10MCLTAG | onsemi |
![]() |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||
![]() |
NVTYS040N10MCLTWG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 27µA Supplier Device Package: 8-LFPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
![]() |
PSMQC040N10NS2_R2_00601 | Panjit International Inc. |
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM Packaging: Tape & Reel (TR) Part Status: Active |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
40N10 |
Hersteller: LITEON
07+
07+
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
AM40N10-30D |
![]() |
Hersteller: Analog Power Inc.
Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
Description: MOSFET N-CH 100V 26A TO-252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1216 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.41 EUR |
19+ | 0.94 EUR |
100+ | 0.85 EUR |
500+ | 0.66 EUR |
1000+ | 0.54 EUR |
2500+ | 0.47 EUR |
BSC040N10NS5 |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 100A TDSON-8
MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 6005 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 3.66 EUR |
10+ | 2.66 EUR |
100+ | 2.11 EUR |
250+ | 2.04 EUR |
5000+ | 1.81 EUR |
10000+ | 1.39 EUR |
BSC040N10NS5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 1.78 EUR |
BSC040N10NS5ATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 100A TDSON-8
MOSFETs N-Ch 100V 100A TDSON-8
auf Bestellung 11867 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.17 EUR |
10+ | 2.85 EUR |
100+ | 1.95 EUR |
500+ | 1.88 EUR |
1000+ | 1.81 EUR |
BSC040N10NS5ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: MOSFET N-CH 100V 100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 30993 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.44 EUR |
10+ | 2.86 EUR |
100+ | 1.97 EUR |
500+ | 1.58 EUR |
1000+ | 1.46 EUR |
2000+ | 1.36 EUR |
BSC040N10NS5SCATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 6346 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 6.41 EUR |
10+ | 4.44 EUR |
25+ | 4.19 EUR |
100+ | 3.22 EUR |
250+ | 3.15 EUR |
500+ | 2.66 EUR |
1000+ | 2.50 EUR |
BSC040N10NS5SCATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4000+ | 2.44 EUR |
BSC040N10NS5SCATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Description: MOSFET N-CH 100V 140A WSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 95µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4944 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.83 EUR |
10+ | 4.50 EUR |
100+ | 3.17 EUR |
500+ | 2.60 EUR |
1000+ | 2.42 EUR |
BSC440N10NS3 G |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TDSON-8 OptiMOS 3
MOSFETs N-Ch 100V 18A TDSON-8 OptiMOS 3
auf Bestellung 21940 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.62 EUR |
10+ | 1.17 EUR |
100+ | 0.79 EUR |
500+ | 0.62 EUR |
1000+ | 0.52 EUR |
5000+ | 0.48 EUR |
BSC440N10NS3G |
Hersteller: Infineon
Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 100V; +/-20V; 44mOhm; 5,3A; 29W; -55°C~150°C; BSC440N10NS3GATMA1 TBSC440n10ns3
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.21 EUR |
BSC440N10NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
auf Bestellung 3059 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.06 EUR |
14+ | 1.29 EUR |
100+ | 0.85 EUR |
500+ | 0.66 EUR |
1000+ | 0.60 EUR |
2000+ | 0.55 EUR |
BSZ440N10NS3 G |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 84283 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.50 EUR |
10+ | 1.12 EUR |
100+ | 0.76 EUR |
500+ | 0.64 EUR |
5000+ | 0.54 EUR |
25000+ | 0.52 EUR |
BSZ440N10NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
auf Bestellung 5911 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
68+ | 1.05 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
1000+ | 0.66 EUR |
BSZ440N10NS3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 29W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Drain current: 18A
On-state resistance: 44mΩ
Power dissipation: 29W
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5911 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
39+ | 1.84 EUR |
68+ | 1.05 EUR |
102+ | 0.71 EUR |
107+ | 0.67 EUR |
1000+ | 0.66 EUR |
BSZ440N10NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 18243 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.92 EUR |
15+ | 1.20 EUR |
100+ | 0.79 EUR |
500+ | 0.61 EUR |
1000+ | 0.56 EUR |
2000+ | 0.51 EUR |
BSZ440N10NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
Description: MOSFET N-CH 100V 5.3A/18A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 12µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.55 EUR |
BSZ440N10NS3GATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
MOSFETs N-Ch 100V 18A TSDSON-8 OptiMOS 3
auf Bestellung 57803 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.69 EUR |
10+ | 1.20 EUR |
100+ | 0.79 EUR |
500+ | 0.61 EUR |
1000+ | 0.51 EUR |
5000+ | 0.45 EUR |
10000+ | 0.44 EUR |
BW-40N100W+ |
![]() |
Hersteller: Mini-Circuits
Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
Attenuators - Interconnects FXD ATTEN /N/40dB 120W RoHS
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1277.00 EUR |
BW-40N100W+ |
![]() |
Hersteller: Mini-Circuits
Description: FXD ATTEN /N /40DB 100W ROHS
Packaging: Box
Power (Watts): 100W
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
Description: FXD ATTEN /N /40DB 100W ROHS
Packaging: Box
Power (Watts): 100W
Package / Case: N-Type In-Line Module
Attenuation Value: 40dB
Part Status: Active
Impedance: 50 Ohms
Frequency Range: 0 Hz ~ 4 GHz
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 1263.64 EUR |
FDBL0240N100 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 19334 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.25 EUR |
10+ | 7.58 EUR |
100+ | 5.51 EUR |
500+ | 4.72 EUR |
FDBL0240N100 |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs N-Channel Power Trench MOSFET
MOSFETs N-Channel Power Trench MOSFET
auf Bestellung 3499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 10.88 EUR |
10+ | 7.39 EUR |
100+ | 5.42 EUR |
500+ | 4.88 EUR |
FDBL0240N100 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
Description: MOSFET N-CH 100V 210A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 80A, 10V
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8755 pF @ 50 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 4.72 EUR |
FQA140N10 |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.07 EUR |
11+ | 6.61 EUR |
12+ | 6.25 EUR |
25+ | 6.23 EUR |
FQA140N10 |
![]() |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 99A; Idm: 560A; 375W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO3PN
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 99A
On-state resistance: 10mΩ
Power dissipation: 375W
Gate charge: 285nC
Gate-source voltage: ±25V
Pulsed drain current: 560A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.07 EUR |
11+ | 6.61 EUR |
12+ | 6.25 EUR |
25+ | 6.23 EUR |
30+ | 6.15 EUR |
120+ | 6.01 EUR |
FQA140N10 |
![]() |
Hersteller: onsemi / Fairchild
MOSFETs 100V N-Channel QFET
MOSFETs 100V N-Channel QFET
auf Bestellung 2183 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 12.67 EUR |
10+ | 12.58 EUR |
30+ | 7.46 EUR |
120+ | 6.48 EUR |
2520+ | 6.12 EUR |
FQA140N10 |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.34 EUR |
30+ | 7.76 EUR |
120+ | 6.54 EUR |
GT040N10T |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 140A 200W 4.5m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
Description: MOSFET N-CH 100V 140A 200W 4.5m
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1000+ | 1.33 EUR |
GT040N10T |
![]() |
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 140A 200W 4.5M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
Description: MOSFET N-CH 100V 140A 200W 4.5M
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5920 pF @ 50 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.03 EUR |
10+ | 3.27 EUR |
IAUZ40N10S5L120ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_(75V 120V( PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tj)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1589 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4228 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.90 EUR |
10+ | 1.84 EUR |
100+ | 1.24 EUR |
500+ | 0.98 EUR |
1000+ | 0.89 EUR |
2000+ | 0.82 EUR |
IAUZ40N10S5N130ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.74 EUR |
IAUZ40N10S5N130ATMA1 |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 40A 8TSDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TSDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1525 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17996 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.89 EUR |
10+ | 1.83 EUR |
100+ | 1.23 EUR |
500+ | 0.97 EUR |
1000+ | 0.89 EUR |
2000+ | 0.82 EUR |
IAUZ40N10S5N130ATMA1 |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFET_(75V 120V(
MOSFETs MOSFET_(75V 120V(
auf Bestellung 19536 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 1.07 EUR |
10+ | 1.06 EUR |
100+ | 0.97 EUR |
500+ | 0.85 EUR |
1000+ | 0.77 EUR |
IXFH140N10P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.04 EUR |
10+ | 7.48 EUR |
IXFH140N10P |
![]() |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Technology: HiPerFET™; Polar™
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 31 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.04 EUR |
10+ | 7.48 EUR |
IXFH140N10P |
![]() |
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 2018 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 14.24 EUR |
10+ | 13.78 EUR |
30+ | 9.15 EUR |
IXFH140N10P |
![]() |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 15.59 EUR |
30+ | 9.77 EUR |
IXFT140N10P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.17 EUR |
9+ | 8.41 EUR |
IXFT140N10P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO268
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Drain current: 140A
On-state resistance: 11mΩ
Power dissipation: 600W
Gate charge: 155nC
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.17 EUR |
9+ | 8.41 EUR |
30+ | 8.28 EUR |
IXFT140N10P |
![]() |
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 22.67 EUR |
10+ | 18.39 EUR |
30+ | 17.12 EUR |
60+ | 16.76 EUR |
IXTT140N10P |
![]() |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Description: MOSFET N-CH 100V 140A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 14.56 EUR |
30+ | 10.21 EUR |
IXTT140N10P |
![]() |
Hersteller: IXYS
MOSFETs 140 Amps 100V 0.011 Rds
MOSFETs 140 Amps 100V 0.011 Rds
auf Bestellung 128 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 16.46 EUR |
10+ | 14.75 EUR |
30+ | 12.18 EUR |
120+ | 11.40 EUR |
270+ | 10.54 EUR |
MCG40N10YHE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.52 EUR |
MCG40N10YHE3-TP |
![]() |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: N-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 20A, 10V
Power Dissipation (Max): 43W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9862 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.22 EUR |
13+ | 1.39 EUR |
100+ | 0.92 EUR |
500+ | 0.72 EUR |
1000+ | 0.65 EUR |
2000+ | 0.60 EUR |
MCG40N10YHE3-TP |
![]() |
Hersteller: Micro Commercial Components (MCC)
MOSFETs
MOSFETs
auf Bestellung 4842 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.49 EUR |
10+ | 1.31 EUR |
100+ | 0.89 EUR |
500+ | 0.75 EUR |
1000+ | 0.64 EUR |
2500+ | 0.60 EUR |
5000+ | 0.51 EUR |
MCW240N10Y-BP |
![]() |
Hersteller: Micro Commercial Co
Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 8.24 EUR |
10+ | 5.36 EUR |
25+ | 4.61 EUR |
100+ | 3.76 EUR |
250+ | 3.34 EUR |
NP40N10VDF-E1-AY |
![]() |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 40A TO252
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.2W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (MP-3ZP)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1559 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
580+ | 0.88 EUR |
NVMFS040N10MCLT1G |
![]() |
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 2138 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.76 EUR |
10+ | 1.10 EUR |
100+ | 0.72 EUR |
500+ | 0.56 EUR |
1000+ | 0.55 EUR |
1500+ | 0.47 EUR |
3000+ | 0.40 EUR |
NVMFS040N10MCLT1G |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 3765 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.78 EUR |
16+ | 1.12 EUR |
100+ | 0.73 EUR |
500+ | 0.57 EUR |
NVMFS040N10MCLT1G |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.49 EUR |
3000+ | 0.41 EUR |
NVMFWS040N10MCLT1G |
![]() |
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
MOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 201 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.04 EUR |
10+ | 1.37 EUR |
100+ | 0.92 EUR |
500+ | 0.73 EUR |
1000+ | 0.68 EUR |
1500+ | 0.60 EUR |
3000+ | 0.55 EUR |
NVMFWS040N10MCLT1G |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.25 EUR |
13+ | 1.43 EUR |
100+ | 0.94 EUR |
500+ | 0.74 EUR |
NVTFS040N10MCLTAG |
![]() |
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 552 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.61 EUR |
10+ | 1.02 EUR |
100+ | 0.68 EUR |
500+ | 0.53 EUR |
1000+ | 0.52 EUR |
1500+ | 0.45 EUR |
3000+ | 0.37 EUR |
NVTFS040N10MCLTAG |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1738 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.71 EUR |
17+ | 1.06 EUR |
100+ | 0.70 EUR |
500+ | 0.54 EUR |
NVTFS040N10MCLTAG |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.44 EUR |
NVTFWS040N10MCLTAG |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.58 EUR |
3000+ | 0.52 EUR |
7500+ | 0.51 EUR |
NVTFWS040N10MCLTAG |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V LL U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 11769 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.18 EUR |
13+ | 1.38 EUR |
100+ | 0.91 EUR |
500+ | 0.71 EUR |
NVTFWS040N10MCLTAG |
![]() |
Hersteller: onsemi
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
MOSFETs Single N-Channel Power MOSFET 100 V, 28 A, 26mohm
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 1.99 EUR |
10+ | 1.36 EUR |
100+ | 0.90 EUR |
500+ | 0.71 EUR |
1000+ | 0.67 EUR |
1500+ | 0.57 EUR |
3000+ | 0.53 EUR |
NVTYS040N10MCLTWG |
![]() |
Hersteller: onsemi
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V LL, SINGLE NCH, LFPAK3
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 40.9mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 3V @ 27µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 564 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.73 EUR |
11+ | 1.68 EUR |
25+ | 1.40 EUR |
100+ | 1.10 EUR |
250+ | 0.94 EUR |
500+ | 0.85 EUR |
1000+ | 0.77 EUR |
PSMQC040N10NS2_R2_00601 |
Hersteller: Panjit International Inc.
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Packaging: Tape & Reel (TR)
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.66 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]