Suchergebnisse für "6n60" : > 60

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SSS6N60A SSS6N60A
Produktcode: 172151
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Fairchild Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 В
Drain-Strom Idd, A: 3,2 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
auf Bestellung: 64 St.
  • 64 St. - Lieferzeit 21-28 Tag (e)
1+1.37 EUR
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SSS6N60A SSS6N60A
Produktcode: 43341
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Samsung sss6n60a-samsung.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 3,2 A
Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
  • 6 St. - stock Köln
1+1.98 EUR
10+1.67 EUR
100+1.04 EUR
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STF6N60M2
Produktcode: 155644
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ST stf6n60m2.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 4,5 А
Durchlasswiderstand Rds(on), Ohm: 1,2 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 232/8
auf Bestellung: 18 St.
  • 18 St. - Lieferzeit 21-28 Tag (e)
1+1.69 EUR
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6n60 AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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6N60C FAIRCHILD
auf Bestellung 88800 Stücke:
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FCA76N60N FCA76N60N onsemi FCA76N60N-D.PDF Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.55 EUR
30+26.29 EUR
60+24.48 EUR
120+22.96 EUR
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FCP16N60 FCP16N60 ONSEMI FCP16N60-D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 167W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 48A
Gate charge: 70nC
Polarisation: unipolar
auf Bestellung 11 Stücke:
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FCP16N60 FCP16N60 onsemi FCP16N60-D.pdf Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1722 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.34 EUR
10+6.21 EUR
50+4.88 EUR
100+4.45 EUR
500+3.7 EUR
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FCP16N60 FCP16N60 onsemi FCP16N60-D.pdf MOSFETs 600V N-CH MOSFET SuperFET
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.17 EUR
10+4.8 EUR
100+4.36 EUR
500+4.13 EUR
1000+4.06 EUR
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FCP16N60N FCP16N60N Fairchild Semiconductor fcpf16n60nt-d.pdf Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
auf Bestellung 2653 Stücke:
Lieferzeit 10-14 Tag (e)
85+6.89 EUR
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FCPF16N60 FCPF16N60 onsemi FCP16N60-D.pdf MOSFETs 600V N-CH SuperFET
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.78 EUR
10+5.13 EUR
100+4.66 EUR
500+4.44 EUR
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FCPF16N60 FCPF16N60 onsemi FCP16N60-D.pdf Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.95 EUR
10+6.65 EUR
50+5.24 EUR
100+4.77 EUR
500+3.97 EUR
Mindestbestellmenge: 3 Stücke
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FQB6N60TM FQB6N60TM Fairchild Semiconductor FAIRS27664-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 19124 Stücke:
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179+3.27 EUR
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FQP6N60C FQP6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 5
auf Bestellung 20356 Stücke:
Lieferzeit 10-14 Tag (e)
370+1.57 EUR
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FQPF6N60C FQPF6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
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288+2.02 EUR
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HI1206N601R-10 HI1206N601R-10 Laird 232C939125EDDCA541C4316B82AF3318D5452D08305A2DD92D9330C625570F12.pdf Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 11334 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.63 EUR
10+0.44 EUR
25+0.39 EUR
50+0.35 EUR
100+0.31 EUR
250+0.26 EUR
500+0.24 EUR
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon TIGD06n60t_0001.pdf IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.32 EUR
Mindestbestellmenge: 20 Stücke
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.92 EUR
5000+0.86 EUR
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 7131 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.31 EUR
10+2.11 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.02 EUR
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies infineon_igd06n60t_ds_en.pdf IGBTs HOME APPLIANCES
auf Bestellung 5590 Stücke:
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2+3.27 EUR
10+1.96 EUR
100+1.3 EUR
500+1.08 EUR
1000+0.98 EUR
2500+0.9 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.87 EUR
50+1.36 EUR
100+1.2 EUR
Mindestbestellmenge: 8 Stücke
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IKA06N60T IKA06N60T Infineon Technologies Infineon_IKA06N60T_DS_v02_05_EN.pdf description IGBTs LOW LOSS DuoPack 600V 6.2A
auf Bestellung 960 Stücke:
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1+5.01 EUR
10+2.48 EUR
100+2.23 EUR
500+1.59 EUR
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IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 162 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
50+2.45 EUR
100+2.2 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate charge: 48nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
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2500+0.84 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies infineon_ikd06n60r_ds_en.pdf IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.42 EUR
10+2.26 EUR
100+1.39 EUR
500+1.09 EUR
1000+0.96 EUR
2500+0.81 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon_IKD06N60RC2_DataSheet_v02_01_EN.pdf IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 4995 Stücke:
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2+2.84 EUR
10+1.8 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.71 EUR
5000+0.67 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.83 EUR
12+1.78 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.84 EUR
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IKD06N60RF IKD06N60RF Infineon info-tikd06n60rf.pdf Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.11 EUR
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IKD06N60RF IKD06N60RF Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf IGBTs IGBT PRODUCTS TrenchStop
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 IGBTs IGBT PRODUCTS
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10+2.12 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
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IKU06N60R IKU06N60R Infineon Technologies INFNS19240-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
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IRFIB6N60A Vishay sihfib6n.pdf N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 2 Stücke
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IRFIB6N60APBF IRFIB6N60APBF VISHAY IRFIB6N60A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Gate charge: 49nC
Polarisation: unipolar
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IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix sihfib6n.pdf Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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50+5.08 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Semiconductors sihfib6n.pdf MOSFETs TO220 600V 5.5A N-CH MOSFET
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Reverse recovery time: 200ns
Gate charge: 72nC
Polarisation: unipolar
Technology: PolarHV™
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IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
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IXFH36N60P IXFH36N60P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_36N60P_Datasheet.PDF MOSFETs 600V 36A
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 258 Stücke:
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
auf Bestellung 204 Stücke:
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IXGH36N60B3 IXGH36N60B3 IXYS littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8 Description: IGBT PT 600V 92A TO-247AD
auf Bestellung 880 Stücke:
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2+13.42 EUR
30+7.69 EUR
120+6.43 EUR
510+5.5 EUR
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
auf Bestellung 1 Stücke:
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IXTH26N60P IXTH26N60P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXTH26N60P_Datasheet.PDF MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
auf Bestellung 317 Stücke:
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1+22.41 EUR
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IXTH26N60P IXTH26N60P IXYS media?resourcetype=datasheets&itemid=C57E78F4-B7FB-4218-9DF9-D683FAEDB385&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH26N60P-Datasheet.PDF Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 298 Stücke:
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30+13.64 EUR
60+12.54 EUR
120+11.61 EUR
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PBES16N60R PBES16N60R TE Connectivity ALCOSWITCH Switches DDEController?Action=srchrtrv&DocNm=9-2381880-9&DocType=DS&DocLang=English Description: SWITCH ESTOP TWIST RESET 3A 125V
Features: Push Marking
Packaging: Tray
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Voltage Rating - DC: 125 V
Reset Operation: Twist
auf Bestellung 32 Stücke:
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1+110.37 EUR
5+96.28 EUR
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PBES16N60R PBES16N60R TE Connectivity / Alcoswitch ENG_DS_9_2381880_9_C1.pdf Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
auf Bestellung 57 Stücke:
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1+96.74 EUR
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SIHA186N60EF-GE3 SIHA186N60EF-GE3 Vishay / Siliconix siha186n60ef.pdf MOSFETs TO220 600V 8.4A N-CH MOSFET
auf Bestellung 1516 Stücke:
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SIHB186N60EF-GE3 SIHB186N60EF-GE3 Vishay Siliconix sihb186n60ef.pdf Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 2659 Stücke:
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3+8.04 EUR
10+5.27 EUR
50+4.08 EUR
100+3.7 EUR
500+3.03 EUR
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SIHD186N60EF-GE3 SIHD186N60EF-GE3 Vishay Siliconix sihd186n60ef.pdf Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
auf Bestellung 4205 Stücke:
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3+8.29 EUR
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SIHD186N60EF-GE3 SIHD186N60EF-GE3 Vishay Semiconductors sihd186n60ef.pdf MOSFETs TO252 600V 19A N-CH MOSFET
auf Bestellung 3137 Stücke:
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SIHG026N60EF-GE3 SIHG026N60EF-GE3 Vishay sihg026n60ef.pdf MOSFETs TO247 600V 95A N-CH MOSFET
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SIHG026N60EF-GE3 SIHG026N60EF-GE3 Vishay Siliconix sihg026n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
auf Bestellung 500 Stücke:
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1+31.39 EUR
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SIHG186N60EF-GE3 SIHG186N60EF-GE3 Vishay / Siliconix sihg186n60ef.pdf MOSFETs TO247 600V 8.4A N-CH MOSFET
auf Bestellung 332 Stücke:
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SIHH186N60EF-T1FE3 SIHH186N60EF-T1FE3 Vishay Siliconix sihh186n60ef-fe3.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
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3+8.54 EUR
10+5.63 EUR
50+4.38 EUR
100+3.99 EUR
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SSS6N60A
Produktcode: 172151
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SSS6N60A
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 В
Drain-Strom Idd, A: 3,2 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
auf Bestellung: 64 St.
  • 64 St. - Lieferzeit 21-28 Tag (e)
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1+1.37 EUR
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SSS6N60A
Produktcode: 43341
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sss6n60a-samsung.pdf
SSS6N60A
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 3,2 A
Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
  • 6 St. - stock Köln
AnzahlPrivatkunde
1+1.98 EUR
10+1.67 EUR
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STF6N60M2
Produktcode: 155644
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stf6n60m2.pdf
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 4,5 А
Durchlasswiderstand Rds(on), Ohm: 1,2 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 232/8
auf Bestellung: 18 St.
  • 18 St. - Lieferzeit 21-28 Tag (e)
AnzahlPrivatkunde
1+1.69 EUR
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6n60
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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6N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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FCA76N60N FCA76N60N-D.PDF
FCA76N60N
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+41.55 EUR
30+26.29 EUR
60+24.48 EUR
120+22.96 EUR
510+22.42 EUR
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FCP16N60 FCP16N60-D.pdf
FCP16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 167W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 10.1A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Pulsed drain current: 48A
Gate charge: 70nC
Polarisation: unipolar
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
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FCP16N60 FCP16N60-D.pdf
FCP16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.34 EUR
10+6.21 EUR
50+4.88 EUR
100+4.45 EUR
500+3.7 EUR
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FCP16N60 FCP16N60-D.pdf
FCP16N60
Hersteller: onsemi
MOSFETs 600V N-CH MOSFET SuperFET
auf Bestellung 925 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.17 EUR
10+4.8 EUR
100+4.36 EUR
500+4.13 EUR
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FCP16N60N fcpf16n60nt-d.pdf
FCP16N60N
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
auf Bestellung 2653 Stücke:
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AnzahlPrivatkunde
85+6.89 EUR
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FCPF16N60 FCP16N60-D.pdf
FCPF16N60
Hersteller: onsemi
MOSFETs 600V N-CH SuperFET
auf Bestellung 335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+9.78 EUR
10+5.13 EUR
100+4.66 EUR
500+4.44 EUR
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FCPF16N60 FCP16N60-D.pdf
FCPF16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.95 EUR
10+6.65 EUR
50+5.24 EUR
100+4.77 EUR
500+3.97 EUR
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FQB6N60TM FAIRS27664-1.pdf?t.download=true&u=5oefqw
FQB6N60TM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 19124 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
179+3.27 EUR
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FQP6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQP6N60C
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 5
auf Bestellung 20356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
370+1.57 EUR
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FQPF6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQPF6N60C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
288+2.02 EUR
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HI1206N601R-10 232C939125EDDCA541C4316B82AF3318D5452D08305A2DD92D9330C625570F12.pdf
HI1206N601R-10
Hersteller: Laird
Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 11334 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+0.63 EUR
10+0.44 EUR
25+0.39 EUR
50+0.35 EUR
100+0.31 EUR
250+0.26 EUR
500+0.24 EUR
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IGD06N60TATMA1 TIGD06n60t_0001.pdf
IGD06N60TATMA1
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.32 EUR
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.92 EUR
5000+0.86 EUR
Mindestbestellmenge: 2500 Stücke
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 7131 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.11 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.02 EUR
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IGD06N60TATMA1 infineon_igd06n60t_ds_en.pdf
IGD06N60TATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES
auf Bestellung 5590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+3.27 EUR
10+1.96 EUR
100+1.3 EUR
500+1.08 EUR
1000+0.98 EUR
2500+0.9 EUR
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IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
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IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.87 EUR
50+1.36 EUR
100+1.2 EUR
Mindestbestellmenge: 8 Stücke
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IKA06N60T description Infineon_IKA06N60T_DS_v02_05_EN.pdf
IKA06N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6.2A
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.01 EUR
10+2.48 EUR
100+2.23 EUR
500+1.59 EUR
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 162 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
50+2.45 EUR
100+2.2 EUR
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate charge: 48nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
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IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.84 EUR
Mindestbestellmenge: 2500 Stücke
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IKD06N60RATMA1 infineon_ikd06n60r_ds_en.pdf
IKD06N60RATMA1
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.42 EUR
10+2.26 EUR
100+1.39 EUR
500+1.09 EUR
1000+0.96 EUR
2500+0.81 EUR
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IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2502 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.95 EUR
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IKD06N60RC2ATMA1 Infineon_IKD06N60RC2_DataSheet_v02_01_EN.pdf
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+2.84 EUR
10+1.8 EUR
100+1.19 EUR
500+0.93 EUR
1000+0.84 EUR
2500+0.71 EUR
5000+0.67 EUR
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IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
12+1.78 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.84 EUR
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IKD06N60RF info-tikd06n60rf.pdf
IKD06N60RF
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
20+2.11 EUR
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IKD06N60RF Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf
IKD06N60RF
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+3.61 EUR
10+2.26 EUR
100+1.49 EUR
500+1.18 EUR
1000+1.05 EUR
2500+0.96 EUR
5000+0.92 EUR
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IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
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IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 2045 Stücke:
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AnzahlPrivatkunde
2+3.31 EUR
10+2.12 EUR
100+1.42 EUR
500+1.12 EUR
1000+1.02 EUR
2500+0.92 EUR
5000+0.9 EUR
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IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 2930 Stücke:
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AnzahlPrivatkunde
9+2.49 EUR
14+1.56 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
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IKU06N60R INFNS19240-1.pdf?t.download=true&u=5oefqw
IKU06N60R
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
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AnzahlPrivatkunde
383+1.52 EUR
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IRFIB6N60A sihfib6n.pdf
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
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AnzahlPrivatkunde
6+5.65 EUR
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IRFIB6N60APBF IRFIB6N60A.pdf
IRFIB6N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Power dissipation: 60W
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain current: 3.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Gate charge: 49nC
Polarisation: unipolar
auf Bestellung 44 Stücke:
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IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 754 Stücke:
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3+9.76 EUR
10+6.49 EUR
50+5.08 EUR
100+4.63 EUR
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IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 5.5A N-CH MOSFET
auf Bestellung 5099 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.72 EUR
10+4.93 EUR
100+4.25 EUR
500+3.67 EUR
1000+3.39 EUR
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IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO263
Mounting: SMD
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 76 Stücke:
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 460W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Reverse recovery time: 200ns
Gate charge: 72nC
Polarisation: unipolar
Technology: PolarHV™
auf Bestellung 247 Stücke:
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IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Power dissipation: 650W
Case: TO247-3
Mounting: THT
Kind of package: tube
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 0.19Ω
Gate charge: 102nC
Polarisation: unipolar
auf Bestellung 266 Stücke:
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IXFH36N60P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_36N60P_Datasheet.PDF
IXFH36N60P
Hersteller: IXYS
MOSFETs 600V 36A
auf Bestellung 76 Stücke:
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1+30.12 EUR
10+19.5 EUR
120+18.14 EUR
510+15.93 EUR
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IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 258 Stücke:
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
auf Bestellung 204 Stücke:
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IXGH36N60B3 littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8
IXGH36N60B3
Hersteller: IXYS
Description: IGBT PT 600V 92A TO-247AD
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.42 EUR
30+7.69 EUR
120+6.43 EUR
510+5.5 EUR
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 36A
Power dissipation: 250W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate charge: 80nC
Technology: GenX3™; PT
auf Bestellung 1 Stücke:
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IXTH26N60P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXTH26N60P_Datasheet.PDF
IXTH26N60P
Hersteller: IXYS
MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
auf Bestellung 317 Stücke:
Lieferzeit 10-14 Tag (e)
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1+22.41 EUR
10+12.61 EUR
120+11.65 EUR
510+11.19 EUR
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IXTH26N60P media?resourcetype=datasheets&itemid=C57E78F4-B7FB-4218-9DF9-D683FAEDB385&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTH26N60P-Datasheet.PDF
IXTH26N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 26A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 298 Stücke:
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AnzahlPrivatkunde
1+22.82 EUR
30+13.64 EUR
60+12.54 EUR
120+11.61 EUR
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PBES16N60R DDEController?Action=srchrtrv&DocNm=9-2381880-9&DocType=DS&DocLang=English
PBES16N60R
Hersteller: TE Connectivity ALCOSWITCH Switches
Description: SWITCH ESTOP TWIST RESET 3A 125V
Features: Push Marking
Packaging: Tray
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Voltage Rating - DC: 125 V
Reset Operation: Twist
auf Bestellung 32 Stücke:
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1+110.37 EUR
5+96.28 EUR
10+90.77 EUR
25+83.97 EUR
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PBES16N60R ENG_DS_9_2381880_9_C1.pdf
PBES16N60R
Hersteller: TE Connectivity / Alcoswitch
Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
auf Bestellung 57 Stücke:
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AnzahlPrivatkunde
1+96.74 EUR
10+90.37 EUR
25+84.35 EUR
50+74.68 EUR
100+71.15 EUR
250+69.62 EUR
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SIHA186N60EF-GE3 siha186n60ef.pdf
SIHA186N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 8.4A N-CH MOSFET
auf Bestellung 1516 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.54 EUR
10+4.9 EUR
100+3.67 EUR
500+3.06 EUR
1000+2.84 EUR
2000+2.81 EUR
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SIHB186N60EF-GE3 sihb186n60ef.pdf
SIHB186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 2659 Stücke:
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AnzahlPrivatkunde
3+8.04 EUR
10+5.27 EUR
50+4.08 EUR
100+3.7 EUR
500+3.03 EUR
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SIHD186N60EF-GE3 sihd186n60ef.pdf
SIHD186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
auf Bestellung 4205 Stücke:
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3+8.29 EUR
10+5.44 EUR
50+4.22 EUR
100+3.83 EUR
500+3.14 EUR
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SIHD186N60EF-GE3 sihd186n60ef.pdf
SIHD186N60EF-GE3
Hersteller: Vishay Semiconductors
MOSFETs TO252 600V 19A N-CH MOSFET
auf Bestellung 3137 Stücke:
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1+6.83 EUR
10+4.25 EUR
100+3.08 EUR
500+2.57 EUR
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3000+2.24 EUR
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SIHG026N60EF-GE3 sihg026n60ef.pdf
SIHG026N60EF-GE3
Hersteller: Vishay
MOSFETs TO247 600V 95A N-CH MOSFET
auf Bestellung 1000 Stücke:
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1+29.76 EUR
10+17.26 EUR
100+16.71 EUR
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SIHG026N60EF-GE3 sihg026n60ef.pdf
SIHG026N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7926 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.39 EUR
25+19.71 EUR
50+18.21 EUR
100+16.93 EUR
500+15.4 EUR
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SIHG186N60EF-GE3 sihg186n60ef.pdf
SIHG186N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 600V 8.4A N-CH MOSFET
auf Bestellung 332 Stücke:
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AnzahlPrivatkunde
1+8.57 EUR
10+4.41 EUR
500+3.42 EUR
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SIHH186N60EF-T1FE3 sihh186n60ef-fe3.pdf
SIHH186N60EF-T1FE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.54 EUR
10+5.63 EUR
50+4.38 EUR
100+3.99 EUR
500+3.43 EUR
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