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SSS6N60A SSS6N60A
Produktcode: 172151
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Fairchild Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 79 St.:
Lieferzeit 21-28 Tag (e)
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SSS6N60A SSS6N60A
Produktcode: 43341
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Samsung sss6n60a-samsung.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 6 St.
1+1.66 EUR
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STF6N60M2
Produktcode: 155644
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ST stf6n60m2.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 19 St.:
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6n60 to-220/f AAT
auf Bestellung 5000 Stücke:
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6N60C FAIRCHILD
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FCP16N60 FCP16N60 ONSEMI fcp16n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
auf Bestellung 28 Stücke:
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FCP16N60 FCP16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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FCP16N60 FCP16N60 onsemi fcp16n60-d.pdf MOSFETs 600V N-CH MOSFET SuperFET
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FCPF16N60 FCPF16N60 onsemi fcp16n60-d.pdf MOSFETs 600V N-CH SuperFET
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FCPF16N60 FCPF16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 998 Stücke:
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FQB6N60TM FQB6N60TM Fairchild Semiconductor FAIRS27664-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 19124 Stücke:
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FQI6N60CTU FQI6N60CTU Fairchild Semiconductor FAIRS25433-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
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FQPF6N60 FQPF6N60 Fairchild Semiconductor FAIRS07077-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
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FQPF6N60C FQPF6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
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IGD06N60TATMA1 Infineon INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies Infineon-IGD06N60T-DS-v02_02-EN.pdf IGBTs HOME APPLIANCES
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES IGP06N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
69+1.05 EUR
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94+0.77 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 146 Stücke:
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IKA06N60T IKA06N60T Infineon Technologies Infineon_IKA06N60T_DS_v02_05_EN.pdf description IGBTs LOW LOSS DuoPack 600V 6.2A
auf Bestellung 990 Stücke:
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IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
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IKB06N60T IKB06N60T Infineon Technologies Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf IGBTs LOW LOSS DuoPack 600V 6A
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IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf IGBTs LOW LOSS DuoPack 600V 6A
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES IKD06N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 19ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
auf Bestellung 537 Stücke:
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon_IKD06N60R_DS_v02_05_EN.pdf IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 57 Stücke:
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 902 Stücke:
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon_IKD06N60RC2_DataSheet_v02_01_EN.pdf IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4161 Stücke:
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IKD06N60RF Infineon Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
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IKD06N60RF IKD06N60RF Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf IGBTs IGBT PRODUCTS TrenchStop
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10+1.38 EUR
100+0.91 EUR
500+0.72 EUR
1000+0.67 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf IGBTs IGBT PRODUCTS
auf Bestellung 2087 Stücke:
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2+2.45 EUR
10+1.56 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
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7+2.59 EUR
11+1.64 EUR
100+1.1 EUR
500+0.86 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon_IKN06N60RC2_DataSheet_v01_10_EN.pdf IGBTs HOME APPLIANCES
auf Bestellung 1890 Stücke:
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2+1.99 EUR
10+1.24 EUR
100+0.81 EUR
500+0.62 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5615 Stücke:
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10+1.94 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES IKP06N60T.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 15ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
61+1.17 EUR
67+1.07 EUR
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IKU06N60R IKU06N60R Infineon Technologies INFNS19240-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
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383+1.18 EUR
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IRFIB6N60A Vishay sihfib6n.pdf N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.99 EUR
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IRFIB6N60APBF IRFIB6N60APBF VISHAY IRFIB6N60A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Gate charge: 49nC
Power dissipation: 60W
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
auf Bestellung 44 Stücke:
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22+3.4 EUR
25+2.9 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Semiconductors sihfib6n.pdf MOSFETs TO220 600V 5.5A N-CH MOSFET
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IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix sihfib6n.pdf Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.24 EUR
50+4.29 EUR
100+3.91 EUR
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IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
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IXFH26N60P IXFH26N60P IXYS IXFH26N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.37 EUR
8+9.01 EUR
10+8.01 EUR
15+7.38 EUR
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IXFH36N60P IXFH36N60P IXYS IXFH(K,T)36N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.64 EUR
7+10.24 EUR
10+9.67 EUR
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IXFH36N60P IXFH36N60P IXYS 99383.pdf Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.67 EUR
30+13.13 EUR
120+11.27 EUR
510+10.18 EUR
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IXFH36N60P IXFH36N60P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_36N60P_Datasheet.PDF MOSFETs 600V 36A
auf Bestellung 66 Stücke:
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1+20.43 EUR
10+14.77 EUR
120+12.43 EUR
510+11.62 EUR
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IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.34 EUR
50+3.98 EUR
100+3.68 EUR
Mindestbestellmenge: 10
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IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 223 Stücke:
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12+6.21 EUR
17+4.4 EUR
Mindestbestellmenge: 12
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IXGH36N60B3 IXGH36N60B3 IXYS Littelfuse_Discrete_IGBTs_PT_IXGH36N60B3_Datasheet.PDF IGBTs GenX3 600V IGBTs
auf Bestellung 549 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.1 EUR
10+5.16 EUR
120+4.28 EUR
1020+4.22 EUR
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IXGH36N60B3 IXGH36N60B3 IXYS littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8 Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.64 EUR
30+5.47 EUR
120+4.55 EUR
Mindestbestellmenge: 2
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IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+71.5 EUR
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IXTH26N60P IXTH26N60P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXTH26N60P_Datasheet.PDF MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
auf Bestellung 113 Stücke:
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1+15.96 EUR
10+10.86 EUR
120+9.2 EUR
510+8.17 EUR
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NTB6N60 NTB6N60 onsemi ONSMS32470-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 9939 Stücke:
Lieferzeit 10-14 Tag (e)
343+1.33 EUR
Mindestbestellmenge: 343
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NTB6N60T4 NTB6N60T4 Motorola ONSMS32470-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
auf Bestellung 6400 Stücke:
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PBES16N60R PBES16N60R TE Connectivity / Alcoswitch ENG_DS_9_2381880_9_C1.pdf Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
auf Bestellung 27 Stücke:
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1+71.91 EUR
10+67.76 EUR
25+62.66 EUR
50+61.49 EUR
100+52.34 EUR
250+52.27 EUR
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PBES16N60R PBES16N60R TE Connectivity ALCOSWITCH Switches DDEController?Action=srchrtrv&DocNm=9-2381880-9&DocType=DS&DocLang=English Description: SWITCH ESTOP TWIST RESET 3A 125V
Packaging: Tray
Features: Push Marking
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Reset Operation: Twist
Voltage Rating - DC: 125 V
auf Bestellung 40 Stücke:
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1+85.57 EUR
5+74.65 EUR
10+70.38 EUR
25+65.1 EUR
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SIHA186N60EF-GE3 SIHA186N60EF-GE3 Vishay / Siliconix siha186n60ef.pdf MOSFETs TO220 600V 8.4A N-CH MOSFET
auf Bestellung 1516 Stücke:
Lieferzeit 10-14 Tag (e)
1+6 EUR
10+3.92 EUR
100+3.08 EUR
500+2.57 EUR
1000+2.39 EUR
2000+2.36 EUR
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SIHB186N60EF-GE3 SIHB186N60EF-GE3 Vishay Siliconix sihb186n60ef.pdf Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3274 Stücke:
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3+6.39 EUR
50+3.25 EUR
100+2.95 EUR
500+2.42 EUR
1000+2.24 EUR
2000+2.1 EUR
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SIHB186N60EF-GE3 SIHB186N60EF-GE3 Vishay / Siliconix sihb186n60ef.pdf MOSFETs TO263 600V 8.4A N-CH MOSFET
auf Bestellung 936 Stücke:
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SSS6N60A
Produktcode: 172151
1 zu Favoriten hinzufügen Lieblingsprodukt
SSS6N60A
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 79 St.:
Lieferzeit 21-28 Tag (e)
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SSS6N60A
Produktcode: 43341
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sss6n60a-samsung.pdf
SSS6N60A
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 6 St.
Anzahl Preis
1+1.66 EUR
10+1.4 EUR
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STF6N60M2
Produktcode: 155644
zu Favoriten hinzufügen Lieblingsprodukt
stf6n60m2.pdf
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 19 St.:
Lieferzeit 21-28 Tag (e)
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6n60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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6N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 48A
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.78 EUR
17+4.35 EUR
20+3.62 EUR
Mindestbestellmenge: 15
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1722 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.57 EUR
50+3.94 EUR
100+3.59 EUR
500+2.97 EUR
1000+2.78 EUR
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi
MOSFETs 600V N-CH MOSFET SuperFET
auf Bestellung 973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.66 EUR
10+4 EUR
100+3.63 EUR
500+3.26 EUR
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: onsemi
MOSFETs 600V N-CH SuperFET
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.53 EUR
10+4.28 EUR
100+3.91 EUR
500+3.52 EUR
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.08 EUR
50+4.22 EUR
100+3.85 EUR
500+3.2 EUR
Mindestbestellmenge: 3
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FQB6N60TM FAIRS27664-1.pdf?t.download=true&u=5oefqw
FQB6N60TM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 19124 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.54 EUR
Mindestbestellmenge: 179
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FQI6N60CTU FAIRS25433-1.pdf?t.download=true&u=5oefqw
FQI6N60CTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
271+1.68 EUR
Mindestbestellmenge: 271
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FQPF6N60 FAIRS07077-1.pdf?t.download=true&u=5oefqw
FQPF6N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.26 EUR
Mindestbestellmenge: 202
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FQPF6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQPF6N60C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
288+1.58 EUR
Mindestbestellmenge: 288
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.92 EUR
Mindestbestellmenge: 20
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 4633 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
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IGD06N60TATMA1 Infineon-IGD06N60T-DS-v02_02-EN.pdf
IGD06N60TATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES
auf Bestellung 6645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.83 EUR
10+1.15 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.54 EUR
2500+0.51 EUR
Mindestbestellmenge: 2
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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IGP06N60TXKSA1 IGP06N60T-DTE.pdf
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 192 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
69+1.05 EUR
77+0.94 EUR
94+0.77 EUR
100+0.75 EUR
Mindestbestellmenge: 59
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IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
50+1.08 EUR
100+0.96 EUR
Mindestbestellmenge: 8
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IKA06N60T description Infineon_IKA06N60T_DS_v02_05_EN.pdf
IKA06N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6.2A
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+1.57 EUR
100+1.41 EUR
500+1.15 EUR
1000+1 EUR
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
50+1.67 EUR
100+1.5 EUR
Mindestbestellmenge: 6
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IKB06N60T Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf
IKB06N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.92 EUR
10+1.87 EUR
100+1.29 EUR
500+1.09 EUR
1000+0.97 EUR
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IKB06N60TATMA1 Infineon-IKB06N60T-DataSheet-v02_05-EN.pdf
IKB06N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.4 EUR
10+2.18 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.09 EUR
2000+1.06 EUR
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IKD06N60RATMA1 IKD06N60R.pdf
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 19ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
auf Bestellung 537 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
87+0.83 EUR
101+0.71 EUR
Mindestbestellmenge: 54
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IKD06N60RATMA1 Infineon_IKD06N60R_DS_v02_05_EN.pdf
IKD06N60RATMA1
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.24 EUR
10+1.42 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
2500+0.6 EUR
Mindestbestellmenge: 2
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IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.5 EUR
100+1 EUR
500+0.78 EUR
Mindestbestellmenge: 8
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IKD06N60RC2ATMA1 Infineon_IKD06N60RC2_DataSheet_v02_01_EN.pdf
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.85 EUR
10+1.16 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
2500+0.51 EUR
Mindestbestellmenge: 2
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IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.6 EUR
Mindestbestellmenge: 2500
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IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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IKD06N60RF
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.08 EUR
Mindestbestellmenge: 20
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IKD06N60RF Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf
IKD06N60RF
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop
auf Bestellung 802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.2 EUR
10+1.38 EUR
100+0.91 EUR
500+0.72 EUR
1000+0.67 EUR
2500+0.62 EUR
Mindestbestellmenge: 2
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IKD06N60RFATMA1 Infineon_IKD06N60RF_DataSheet_v02_04_EN.pdf
IKD06N60RFATMA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.45 EUR
10+1.56 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
2500+0.67 EUR
5000+0.62 EUR
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IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.1 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
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IKN06N60RC2ATMA1 Infineon_IKN06N60RC2_DataSheet_v01_10_EN.pdf
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES
auf Bestellung 1890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.24 EUR
100+0.81 EUR
500+0.62 EUR
1000+0.56 EUR
3000+0.51 EUR
6000+0.48 EUR
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IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.56 EUR
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IKP06N60TXKSA1 IKP06N60T.pdf
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 15ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
61+1.17 EUR
67+1.07 EUR
Mindestbestellmenge: 38
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IKU06N60R INFNS19240-1.pdf?t.download=true&u=5oefqw
IKU06N60R
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
383+1.18 EUR
Mindestbestellmenge: 383
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IRFIB6N60A sihfib6n.pdf
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.99 EUR
Mindestbestellmenge: 10
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IRFIB6N60APBF IRFIB6N60A.pdf
IRFIB6N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Gate charge: 49nC
Power dissipation: 60W
On-state resistance: 0.75Ω
Gate-source voltage: ±30V
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.4 EUR
25+2.9 EUR
Mindestbestellmenge: 22
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IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 5.5A N-CH MOSFET
auf Bestellung 5220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.32 EUR
10+3.89 EUR
100+3.61 EUR
500+3.08 EUR
1000+2.66 EUR
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IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.24 EUR
50+4.29 EUR
100+3.91 EUR
500+3.24 EUR
Mindestbestellmenge: 3
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IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
Mindestbestellmenge: 25
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IXFH26N60P IXFH26N60P.pdf
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.37 EUR
8+9.01 EUR
10+8.01 EUR
15+7.38 EUR
Mindestbestellmenge: 7
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IXFH36N60P IXFH(K,T)36N60P.pdf
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.64 EUR
7+10.24 EUR
10+9.67 EUR
Mindestbestellmenge: 6
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IXFH36N60P 99383.pdf
IXFH36N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.67 EUR
30+13.13 EUR
120+11.27 EUR
510+10.18 EUR
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IXFH36N60P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_36N60P_Datasheet.PDF
IXFH36N60P
Hersteller: IXYS
MOSFETs 600V 36A
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.43 EUR
10+14.77 EUR
120+12.43 EUR
510+11.62 EUR
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IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
50+3.98 EUR
100+3.68 EUR
Mindestbestellmenge: 10
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IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.21 EUR
17+4.4 EUR
Mindestbestellmenge: 12
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IXGH36N60B3 Littelfuse_Discrete_IGBTs_PT_IXGH36N60B3_Datasheet.PDF
IXGH36N60B3
Hersteller: IXYS
IGBTs GenX3 600V IGBTs
auf Bestellung 549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.1 EUR
10+5.16 EUR
120+4.28 EUR
1020+4.22 EUR
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IXGH36N60B3 littelfuse-discrete-igbts-ixgh36n60b3-datasheet?assetguid=b1803890-5b28-411c-a8c3-a6d8847339c8
IXGH36N60B3
Hersteller: IXYS
Description: IGBT PT 600V 92A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/125ns
Switching Energy: 540µJ (on), 800µJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 92 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 250 W
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.64 EUR
30+5.47 EUR
120+4.55 EUR
Mindestbestellmenge: 2
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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IXTH26N60P Littelfuse_Discrete_MOSFETs_N_Channel_Standard_IXTH26N60P_Datasheet.PDF
IXTH26N60P
Hersteller: IXYS
MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.96 EUR
10+10.86 EUR
120+9.2 EUR
510+8.17 EUR
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NTB6N60 ONSMS32470-1.pdf?t.download=true&u=5oefqw
NTB6N60
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 9939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
343+1.33 EUR
Mindestbestellmenge: 343
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NTB6N60T4 ONSMS32470-1.pdf?t.download=true&u=5oefqw
NTB6N60T4
Hersteller: Motorola
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
158+2.88 EUR
Mindestbestellmenge: 158
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PBES16N60R ENG_DS_9_2381880_9_C1.pdf
PBES16N60R
Hersteller: TE Connectivity / Alcoswitch
Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+71.91 EUR
10+67.76 EUR
25+62.66 EUR
50+61.49 EUR
100+52.34 EUR
250+52.27 EUR
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PBES16N60R DDEController?Action=srchrtrv&DocNm=9-2381880-9&DocType=DS&DocLang=English
PBES16N60R
Hersteller: TE Connectivity ALCOSWITCH Switches
Description: SWITCH ESTOP TWIST RESET 3A 125V
Packaging: Tray
Features: Push Marking
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Reset Operation: Twist
Voltage Rating - DC: 125 V
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+85.57 EUR
5+74.65 EUR
10+70.38 EUR
25+65.1 EUR
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SIHA186N60EF-GE3 siha186n60ef.pdf
SIHA186N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 8.4A N-CH MOSFET
auf Bestellung 1516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6 EUR
10+3.92 EUR
100+3.08 EUR
500+2.57 EUR
1000+2.39 EUR
2000+2.36 EUR
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SIHB186N60EF-GE3 sihb186n60ef.pdf
SIHB186N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.39 EUR
50+3.25 EUR
100+2.95 EUR
500+2.42 EUR
1000+2.24 EUR
2000+2.1 EUR
Mindestbestellmenge: 3
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SIHB186N60EF-GE3 sihb186n60ef.pdf
SIHB186N60EF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO263 600V 8.4A N-CH MOSFET
auf Bestellung 936 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.98 EUR
10+3.04 EUR
100+2.76 EUR
500+2.43 EUR
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