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SSS6N60A SSS6N60A
Produktcode: 43341
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Samsung sss6n60a-samsung.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 6 Stück
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SSS6N60A SSS6N60A
Produktcode: 172151
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Fairchild Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 11 Stück:
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STF6N60M2
Produktcode: 155644
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ST stf6n60m2.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 32 Stück:
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6n60 to-220/f AAT
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6N60C FAIRCHILD
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APT106N60LC6 APT106N60LC6 Microchip Technology APT47N60B_SC3_G__F-3444503.pdf MOSFETs MOSFET COOLMOS 600 V 106 A TO-264
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D4C0206N-60 D4C0206N-60 Electroswitch d4-2308958.pdf Rotary Switches 2Poles 02-06Pos 1Sec Non-Shorting
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FCP16N60 FCP16N60 onsemi / Fairchild fcp16n60-d.pdf MOSFETs 600V N-CH MOSFET SuperFET
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FCP16N60 FCP16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
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FCPF16N60 FCPF16N60 onsemi fcp16n60-d.pdf Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1000 Stücke:
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FCPF16N60 FCPF16N60 onsemi / Fairchild fcp16n60-d.pdf MOSFETs 600V N-CH SuperFET
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FQPF6N60C FQPF6N60C Fairchild Semiconductor FAIRS27209-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
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HI1206N601R-10 HI1206N601R-10 Laird Technologies hi1206n601r-10-datasheet Ferrite Beads High-Freq Solid Ferrite Cable Cores
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IGD06N60TATMA1 Infineon INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies Infineon_IGD06N60T_DS_v02_02_EN-1731501.pdf IGBTs HOME APPLIANCES 14
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IGD06N60TATMA1 IGD06N60TATMA1 Infineon Technologies INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
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IGP06N60T IGP06N60T Infineon Technologies Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 1906 Stücke:
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 154 Stücke:
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41+1.74 EUR
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75+0.96 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 440 Stücke:
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100+1.17 EUR
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf IGBTs LOW LOSS DuoPack 600V 6A
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IKA06N60TXKSA1 IKA06N60TXKSA1 Infineon Technologies IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 253 Stücke:
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IKB06N60T IKB06N60T Infineon Technologies Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf IGBTs LOW LOSS DuoPack 600V 6A
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IKB06N60TATMA1 IKB06N60TATMA1 Infineon Technologies Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf IGBTs LOW LOSS DuoPack 600V 6A
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 818 Stücke:
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500+0.71 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 818 Stücke:
Lieferzeit 7-14 Tag (e)
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98+0.74 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon_IKD06N60R_DS_v02_05_EN-1226890.pdf IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 2097 Stücke:
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2+2.38 EUR
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100+1.01 EUR
500+0.79 EUR
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IKD06N60RATMA1 IKD06N60RATMA1 Infineon Technologies Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1461 Stücke:
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8+2.34 EUR
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100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
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2+2.27 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
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2500+0.6 EUR
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IKD06N60RC2ATMA1 IKD06N60RC2ATMA1 Infineon Technologies Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20 Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4447 Stücke:
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8+2.24 EUR
13+1.41 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
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IKD06N60RF Infineon Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
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20+2.01 EUR
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IKD06N60RF IKD06N60RF Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf IGBTs IGBT PRODUCTS TrenchStop
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.15 EUR
10+1.52 EUR
100+1.18 EUR
500+1 EUR
1000+0.81 EUR
2500+0.77 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507 Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
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IKD06N60RFATMA1 IKD06N60RFATMA1 Infineon Technologies Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf IGBTs IGBT PRODUCTS
auf Bestellung 2087 Stücke:
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2+1.74 EUR
10+1.25 EUR
100+0.98 EUR
250+0.97 EUR
500+0.84 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5625 Stücke:
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10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
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IKN06N60RC2ATMA1 IKN06N60RC2ATMA1 Infineon Technologies Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769 IGBTs HOME APPLIANCES 14
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.76 EUR
10+1.2 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.57 EUR
3000+0.5 EUR
6000+0.46 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
42+1.73 EUR
46+1.56 EUR
Mindestbestellmenge: 37
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IKP06N60TXKSA1 IKP06N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
42+1.73 EUR
46+1.56 EUR
500+1.07 EUR
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IKP06N60TXKSA1 IKP06N60TXKSA1 Infineon Technologies IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
50+1.56 EUR
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500+1.11 EUR
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IKU06N60R IKU06N60R Infineon Technologies INFNS19240-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
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461+1 EUR
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IRFIB6N60A Vishay sihfib6n.pdf N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
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10+2.89 EUR
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IRFIB6N60APBF IRFIB6N60APBF VISHAY pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD8FA496F2EB0143&compId=IRFIB6N60A.pdf?ci_sign=be77c75cc5a3bff9e60c6ac5fe6476ffcb756bee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 74 Stücke:
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17+4.38 EUR
35+2.07 EUR
45+1.62 EUR
47+1.53 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Semiconductors sihfib6n.pdf MOSFETs TO220 600V 5.5A N-CH MOSFET
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.86 EUR
10+4.36 EUR
25+2.64 EUR
1000+2.53 EUR
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IRFIB6N60APBF IRFIB6N60APBF Vishay Siliconix sihfib6n.pdf Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.81 EUR
50+2.95 EUR
Mindestbestellmenge: 4
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IXFA16N60P3 IXFA16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 IXFA16N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
Mindestbestellmenge: 25
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IXFA36N60X3 IXFA36N60X3 IXYS media-3321973.pdf MOSFETs TO263 600V 36A N-CH X3CLASS
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.02 EUR
10+9.24 EUR
50+7.78 EUR
100+6.79 EUR
250+6.6 EUR
500+6.05 EUR
1000+5.93 EUR
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IXFA36N60X3 IXFA36N60X3 Littelfuse Inc. littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61 Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.93 EUR
50+7.58 EUR
100+6.62 EUR
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IXFH26N60P IXFH26N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.33 EUR
9+8.11 EUR
10+7.66 EUR
Mindestbestellmenge: 7
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IXFH26N60P IXFH26N60P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3 Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.36 EUR
30+8.76 EUR
120+7.86 EUR
510+7.23 EUR
Mindestbestellmenge: 2
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IXFH26N60P IXFH26N60P IXYS media-3321580.pdf MOSFETs 600V 26A
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.29 EUR
10+13.39 EUR
30+9.61 EUR
510+9.42 EUR
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IXFH36N60P IXFH36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.17 EUR
7+10.62 EUR
8+10.04 EUR
Mindestbestellmenge: 6
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IXFH36N60P IXFH36N60P IXYS media-3323767.pdf MOSFETs 600V 36A
auf Bestellung 273 Stücke:
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1+11.93 EUR
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IXFH36N60P IXFH36N60P Littelfuse Inc. 99383.pdf Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.94 EUR
30+11.65 EUR
120+10.72 EUR
510+10.36 EUR
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IXFH36N60X3 IXFH36N60X3 IXYS media-3320246.pdf MOSFETs TO247 600V 36A N-CH X3CLASS
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.01 EUR
10+11.14 EUR
30+8.48 EUR
120+7.3 EUR
270+7.11 EUR
510+7.02 EUR
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IXFH36N60X3 IXFH36N60X3 Littelfuse Inc. littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.9 EUR
30+8.44 EUR
120+7.25 EUR
Mindestbestellmenge: 2
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IXFK36N60P IXFK36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK36N60P IXFK36N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
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SSS6N60A
Produktcode: 43341
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sss6n60a-samsung.pdf
SSS6N60A
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600
Idd,A: 03.02.2015
Rds(on), Ohm: 01.08.2015
Ciss, pF/Qg, nC: 03.09.350
Bem.: Ізольований корпус
JHGF: THT
verfügbar: 6 Stück
Anzahl Preis
1+1.66 EUR
10+1.4 EUR
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SSS6N60A
Produktcode: 172151
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SSS6N60A
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Uds,V: 600 V
Idd,A: 3,2 A
Rds(on), Ohm: 1,8 Ohm
Ciss, pF/Qg, nC: 350/9,3
Bem.: Ізольований корпус
JHGF: THT
auf Bestellung 11 Stück:
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STF6N60M2
Produktcode: 155644
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stf6n60m2.pdf
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Uds,V: 650 V
Idd,A: 4,5 A
Rds(on), Ohm: 1,2 Ohm
Ciss, pF/Qg, nC: 232/8
auf Bestellung 32 Stück:
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6n60
Hersteller: to-220/f
AAT
auf Bestellung 5000 Stücke:
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6N60C
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
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APT106N60LC6 APT47N60B_SC3_G__F-3444503.pdf
APT106N60LC6
Hersteller: Microchip Technology
MOSFETs MOSFET COOLMOS 600 V 106 A TO-264
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D4C0206N-60 d4-2308958.pdf
D4C0206N-60
Hersteller: Electroswitch
Rotary Switches 2Poles 02-06Pos 1Sec Non-Shorting
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi / Fairchild
MOSFETs 600V N-CH MOSFET SuperFET
auf Bestellung 875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.06 EUR
50+3.78 EUR
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FCP16N60 fcp16n60-d.pdf
FCP16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 4838 Stücke:
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Anzahl Preis
3+7 EUR
50+3.76 EUR
100+3.43 EUR
500+3.01 EUR
1000+2.87 EUR
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1000 Stücke:
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Anzahl Preis
3+8.24 EUR
50+4.02 EUR
100+3.79 EUR
500+3.3 EUR
1000+3.13 EUR
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FCPF16N60 fcp16n60-d.pdf
FCPF16N60
Hersteller: onsemi / Fairchild
MOSFETs 600V N-CH SuperFET
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.31 EUR
50+3.92 EUR
100+3.82 EUR
250+3.8 EUR
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FQPF6N60C FAIRS27209-1.pdf?t.download=true&u=5oefqw
FQPF6N60C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
347+1.34 EUR
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HI1206N601R-10 hi1206n601r-10-datasheet
HI1206N601R-10
Hersteller: Laird Technologies
Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 8470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+0.46 EUR
10+0.37 EUR
25+0.34 EUR
50+0.31 EUR
100+0.28 EUR
3000+0.12 EUR
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C   IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
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Anzahl Preis
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 4756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.29 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
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IGD06N60TATMA1 Infineon_IGD06N60T_DS_v02_02_EN-1731501.pdf
IGD06N60TATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES 14
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.26 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.61 EUR
2500+0.56 EUR
5000+0.53 EUR
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IGD06N60TATMA1 INFN-S-A0004165858-1.pdf?t.download=true&u=5oefqw
IGD06N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.54 EUR
Mindestbestellmenge: 2500
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IGP06N60T Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf
IGP06N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 1906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.2 EUR
10+1.55 EUR
100+1.21 EUR
500+1.02 EUR
1000+0.83 EUR
2500+0.78 EUR
5000+0.75 EUR
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IGP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
50+1.46 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 41
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IGP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B3171D35FF4FA8&compId=IGP06N60T-DTE.pdf?ci_sign=9ac35b215c56b00cc17deb3e21b51f59f54290eb
IGP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 154 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.74 EUR
50+1.46 EUR
71+1.02 EUR
75+0.96 EUR
500+0.94 EUR
1000+0.93 EUR
Mindestbestellmenge: 41
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IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
50+1.31 EUR
100+1.17 EUR
Mindestbestellmenge: 7
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IGP06N60TXKSA1 Infineon_IGP06N60T_DS_v02_03_en-1731555.pdf
IGP06N60TXKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.9 EUR
10+2.8 EUR
25+1.38 EUR
100+1.23 EUR
500+1.02 EUR
1000+0.78 EUR
2500+0.77 EUR
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IKA06N60TXKSA1 IKA06N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42868603dee
IKA06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
50+1.64 EUR
100+1.47 EUR
Mindestbestellmenge: 6
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IKB06N60T Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf
IKB06N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+1.99 EUR
100+1.58 EUR
500+1.33 EUR
1000+1.14 EUR
2000+1.08 EUR
5000+1.05 EUR
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IKB06N60TATMA1 Infineon_IKB06N60T_DataSheet_v02_05_EN-3362625.pdf
IKB06N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.64 EUR
10+2.34 EUR
100+1.6 EUR
500+1.27 EUR
1000+1.15 EUR
2000+1.05 EUR
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IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 818 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
59+1.23 EUR
92+0.78 EUR
98+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 37
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IKD06N60RATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDDD3F1CDA1D820&compId=IKD06N60R.pdf?ci_sign=c4b8048f27233912a33abdef90e7ecad642b9369
IKD06N60RATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 279ns
Turn-on time: 19ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 818 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.94 EUR
59+1.23 EUR
92+0.78 EUR
98+0.74 EUR
500+0.71 EUR
Mindestbestellmenge: 37
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IKD06N60RATMA1 Infineon_IKD06N60R_DS_v02_05_EN-1226890.pdf
IKD06N60RATMA1
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 2097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+1.5 EUR
100+1.01 EUR
500+0.79 EUR
1000+0.72 EUR
2500+0.65 EUR
5000+0.59 EUR
Mindestbestellmenge: 2
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IKD06N60RATMA1 Infineon-IKD06N60R-DS-v02_05-en.pdf?fileId=db3a30433c5c92fb013c5dd406a402d6
IKD06N60RATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 110µJ (on), 220µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
12+1.48 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
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IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs 600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
auf Bestellung 3469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.27 EUR
10+1.43 EUR
25+1.4 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 2
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IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.6 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RC2ATMA1 Infineon-IKD06N60RC2-DataSheet-v02_01-EN.pdf?fileId=5546d4627645f877017652234ae34d20
IKD06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 11.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 98 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 6ns/129ns
Switching Energy: 170µJ (on), 80µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 11.7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 51.7 W
auf Bestellung 4447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.41 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RF
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C;   IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.01 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RF Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf
IKD06N60RF
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.15 EUR
10+1.52 EUR
100+1.18 EUR
500+1 EUR
1000+0.81 EUR
2500+0.77 EUR
5000+0.73 EUR
Mindestbestellmenge: 2
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IKD06N60RFATMA1 Infineon-EiceDRIVER_Gate_Driver_ICs-ProductSelectionGuide-v02_00-EN.pdf?fileId=8ac78c8c80027ecd018094fa56806ee1&redirId=195507
IKD06N60RFATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
11+1.72 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IKD06N60RFATMA1 Infineon_IKD06N60RF_DataSheet_v02_04_EN-3361920.pdf
IKD06N60RFATMA1
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.74 EUR
10+1.25 EUR
100+0.98 EUR
250+0.97 EUR
500+0.84 EUR
1000+0.78 EUR
Mindestbestellmenge: 2
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IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 5625 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
1000+0.55 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKN06N60RC2ATMA1 Infineon-IKN06N60RC2-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c7c9758f2017c991a73d90769
IKN06N60RC2ATMA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES 14
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.76 EUR
10+1.2 EUR
100+0.8 EUR
500+0.63 EUR
1000+0.57 EUR
3000+0.5 EUR
6000+0.46 EUR
Mindestbestellmenge: 2
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IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
46+1.56 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE2747C5EC7820&compId=IKP06N60T.pdf?ci_sign=fe7eb39bc96303d3dfea9fcce07ee1c6ee3290c4
IKP06N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 188ns
Turn-on time: 15ns
Pulsed collector current: 18A
Collector-emitter voltage: 600V
Collector current: 6A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
37+1.96 EUR
42+1.73 EUR
46+1.56 EUR
500+1.07 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IKP06N60TXKSA1 IKP06N60T+Rev2_3G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a304323b87bc20123bcc72f95356d
IKP06N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.24 EUR
50+1.56 EUR
100+1.4 EUR
500+1.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKU06N60R INFNS19240-1.pdf?t.download=true&u=5oefqw
IKU06N60R
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
461+1 EUR
Mindestbestellmenge: 461
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60A sihfib6n.pdf
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.89 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60APBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BD8FA496F2EB0143&compId=IRFIB6N60A.pdf?ci_sign=be77c75cc5a3bff9e60c6ac5fe6476ffcb756bee
IRFIB6N60APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Case: TO220FP
Mounting: THT
Kind of package: tube
Drain-source voltage: 600V
Drain current: 3.5A
On-state resistance: 0.75Ω
Type of transistor: N-MOSFET
Power dissipation: 60W
Polarisation: unipolar
Gate charge: 49nC
Kind of channel: enhancement
Gate-source voltage: ±30V
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.38 EUR
35+2.07 EUR
45+1.62 EUR
47+1.53 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 5.5A N-CH MOSFET
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.86 EUR
10+4.36 EUR
25+2.64 EUR
1000+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFIB6N60APBF sihfib6n.pdf
IRFIB6N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 773 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.81 EUR
50+2.95 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFA16N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D52E81740A5820&compId=IXFA(H%2CP)16N60P3.pdf?ci_sign=5bf62970bec965613ad22cf903e4c096360d3162
IXFA16N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IXFA36N60X3 media-3321973.pdf
IXFA36N60X3
Hersteller: IXYS
MOSFETs TO263 600V 36A N-CH X3CLASS
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.02 EUR
10+9.24 EUR
50+7.78 EUR
100+6.79 EUR
250+6.6 EUR
500+6.05 EUR
1000+5.93 EUR
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IXFA36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfa36n60x3-datasheet?assetguid=9c561014-ffa0-419b-994f-22f5fa914d61
IXFA36N60X3
Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.93 EUR
50+7.58 EUR
100+6.62 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60P pVersion=0046&contRep=ZT&docId=005056AB752F1ED783F9DF33DFBB2259&compId=IXFH26N60P.pdf?ci_sign=9bba2217361a08c9c0640ecbde1a01f412fcd492
IXFH26N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
9+8.11 EUR
10+7.66 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFH26N60P-Datasheet.PDF?assetguid=7F279F9D-6FA3-416E-88EF-49FFF079F4B3
IXFH26N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 26A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
auf Bestellung 7784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.36 EUR
30+8.76 EUR
120+7.86 EUR
510+7.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH26N60P media-3321580.pdf
IXFH26N60P
Hersteller: IXYS
MOSFETs 600V 26A
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.29 EUR
10+13.39 EUR
30+9.61 EUR
510+9.42 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFH36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 296 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.17 EUR
7+10.62 EUR
8+10.04 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P media-3323767.pdf
IXFH36N60P
Hersteller: IXYS
MOSFETs 600V 36A
auf Bestellung 273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60P 99383.pdf
IXFH36N60P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 36A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 18A, 10V
Power Dissipation (Max): 650W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
auf Bestellung 746 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.94 EUR
30+11.65 EUR
120+10.72 EUR
510+10.36 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60X3 media-3320246.pdf
IXFH36N60X3
Hersteller: IXYS
MOSFETs TO247 600V 36A N-CH X3CLASS
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.01 EUR
10+11.14 EUR
30+8.48 EUR
120+7.3 EUR
270+7.11 EUR
510+7.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH36N60X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh36n60x3-datasheet?assetguid=38271253-e2cd-4f1f-b434-c9ed8035371e
IXFH36N60X3
Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 36A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 18A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
auf Bestellung 123 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.9 EUR
30+8.44 EUR
120+7.25 EUR
Mindestbestellmenge: 2
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IXFK36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFK36N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC1E5B4133F820&compId=IXFH(K%2CT)36N60P.pdf?ci_sign=f303cae51d0f22faf44d1bff5e4ef775e61b58ec
IXFK36N60P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+23.84 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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