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IXFH26N65X2 IXFH26N65X2 IXYS K248734.pdf MOSFETs TO247 650V 26A N-CH X2CLASS
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.11 EUR
10+12.25 EUR
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IXFH26N65X2 IXFH26N65X2 IXYS K248734.pdf Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.25 EUR
30+11.84 EUR
120+11.33 EUR
510+11.15 EUR
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IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.76 EUR
Mindestbestellmenge: 10
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IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.76 EUR
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IXFH46N65X2 IXFH46N65X2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXFH46N65X2-Datasheet.PDF MOSFETs MOSFET 650V/46A Ultra Junction X2
auf Bestellung 403 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.46 EUR
10+9.86 EUR
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IXFH46N65X2 IXFH46N65X2 IXYS littelfuse-discrete-mosfets-ixfh46n65x2-datasheet?assetguid=ad91230a-7477-47d1-9aed-c4a5de3b76d9 Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.05 EUR
30+10.19 EUR
120+8.68 EUR
510+8.14 EUR
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IXFH46N65X2W IXYS ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8 Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.72 EUR
30+9.34 EUR
120+7.93 EUR
Mindestbestellmenge: 2
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IXFH46N65X2W IXFH46N65X2W IXYS Power_Semiconductor_Discrete_MOSFET_IXFH46N65X2W_Datasheet.pdf MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.51 EUR
10+12.13 EUR
120+10.1 EUR
510+8.99 EUR
1020+8.01 EUR
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IXFH46N65X3 IXFH46N65X3 IXYS littelfuse_discrete_mosfets_n_channel_ultra_junction_ixfh46n65x3_datasheet.pdf MOSFETs TO247 650V 46A N-CH X3CLASS
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.4 EUR
10+12.06 EUR
120+8.91 EUR
510+8.84 EUR
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IXFH46N65X3 IXFH46N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6 Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.66 EUR
10+11.77 EUR
300+8.22 EUR
Mindestbestellmenge: 2
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
8+9.01 EUR
10+8.34 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
8+9.01 EUR
10+8.34 EUR
50+7.19 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS 238_K248734.pdf Description: IXFP26N65X2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 237 Stücke:
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2+16 EUR
50+8.93 EUR
100+8.25 EUR
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KSM6----N6--5-- KSM6----N6--5-- Essentra Components Plastic_Knobs.pdf Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1698 Stücke:
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10+1.81 EUR
12+1.52 EUR
13+1.42 EUR
25+1.3 EUR
50+1.22 EUR
100+1.15 EUR
250+1.07 EUR
500+1.01 EUR
1000+0.97 EUR
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SIHA6N65E-GE3 SIHA6N65E-GE3 Vishay Siliconix siha6n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.19 EUR
10+2.71 EUR
100+1.86 EUR
500+1.5 EUR
Mindestbestellmenge: 5
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SIHA6N65E-GE3 SIHA6N65E-GE3 Vishay Siliconix siha6n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+1.39 EUR
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay / Siliconix sihd6n65e.pdf MOSFETs 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 5747 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.27 EUR
10+1.41 EUR
100+1.3 EUR
500+1.23 EUR
1000+1.14 EUR
3000+1.06 EUR
6000+1.02 EUR
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay Siliconix sihd6n65e.pdf Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
75+1.41 EUR
150+1.3 EUR
525+1.22 EUR
1050+1.13 EUR
2025+1.05 EUR
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SIHF6N65E-GE3 SIHF6N65E-GE3 Vishay / Siliconix sihf6n65e.pdf MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.95 EUR
10+3.2 EUR
100+2.36 EUR
500+1.99 EUR
1000+1.62 EUR
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SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 Vishay Semiconductors sihj6n65e.pdf MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5727 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.45 EUR
10+2.87 EUR
100+2.06 EUR
500+1.72 EUR
1000+1.68 EUR
3000+1.55 EUR
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SIHP6N65E-GE3 SIHP6N65E-GE3 Vishay / Siliconix sihp6n65e.pdf MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.38 EUR
10+2.85 EUR
100+2.09 EUR
500+1.76 EUR
1000+1.46 EUR
2000+1.45 EUR
5000+1.44 EUR
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SIHU6N65E-GE3 SIHU6N65E-GE3 Vishay / Siliconix sihu6n65e.pdf MOSFETs 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.78 EUR
10+2.43 EUR
100+1.65 EUR
500+1.37 EUR
1000+1.21 EUR
3000+1.08 EUR
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STB6N65K3 STB6N65K3 STMicroelectronics MOSFETs PTD HIGH VOLTAGE
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.08 EUR
10+1.99 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.97 EUR
2000+0.89 EUR
5000+0.84 EUR
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STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.31 EUR
Mindestbestellmenge: 2500
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STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.36 EUR
10+2.71 EUR
100+1.95 EUR
500+1.61 EUR
1000+1.54 EUR
2500+1.36 EUR
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STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2518 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.41 EUR
10+2.75 EUR
100+1.94 EUR
500+1.6 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A593DEAA40D2&compId=std16n65m5.pdf?ci_sign=f4c198efa440c3ee96d5804406f893b7d2a7e28f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.32 EUR
36+2 EUR
Mindestbestellmenge: 31
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STD16N65M5 STD16N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A593DEAA40D2&compId=std16n65m5.pdf?ci_sign=f4c198efa440c3ee96d5804406f893b7d2a7e28f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2343 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.32 EUR
36+2 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 4600 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.82 EUR
Mindestbestellmenge: 2500
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STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7576 Stücke:
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STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf MOSFETs N-Ch 650 Volt 12 Amp
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STD6N65M2 STD6N65M2 STMicroelectronics en.DM00127825.pdf MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 3217 Stücke:
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2+2.11 EUR
10+1.4 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
2500+0.61 EUR
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STD6N65M2 STD6N65M2 STMicroelectronics en.DM00127825.pdf Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 1020 Stücke:
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9+2.09 EUR
13+1.42 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
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30+2.46 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
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30+2.46 EUR
41+1.76 EUR
50+1.59 EUR
100+1.54 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 30 Stücke:
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13+1.44 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 957 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.29 EUR
10+1.2 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E9B355D08F4745&compId=STF16N65M5.pdf?ci_sign=4c97b280c8bbd87509bc814f608dbbebbb69218e Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.47 EUR
28+2.6 EUR
29+2.47 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E9B355D08F4745&compId=STF16N65M5.pdf?ci_sign=4c97b280c8bbd87509bc814f608dbbebbb69218e Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
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21+3.47 EUR
28+2.6 EUR
29+2.47 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics en.CD00218186.pdf MOSFETs N-CH 65V 12A MDMESH
auf Bestellung 9010 Stücke:
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1+5.14 EUR
10+2.62 EUR
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500+2.11 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics en.CD00218186.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1595 Stücke:
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4+5.12 EUR
50+2.6 EUR
100+2.36 EUR
500+2.03 EUR
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STF26N65DM2 STMicroelectronics stf26n65dm2.pdf MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 1 Stücke:
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1+6.51 EUR
10+4.35 EUR
100+3.34 EUR
500+2.97 EUR
1000+2.53 EUR
2000+2.41 EUR
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STF6N65K3 STF6N65K3 STMicroelectronics en.CD00297329.pdf MOSFETs N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 795 Stücke:
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1+4.93 EUR
10+1.56 EUR
1000+1.55 EUR
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STL16N65M2 STL16N65M2 STMicroelectronics en.DM00141948.pdf Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 1665 Stücke:
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4+4.49 EUR
10+2.97 EUR
100+2.05 EUR
500+1.71 EUR
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STL16N65M2 STL16N65M2 STMicroelectronics en.DM00141948.pdf MOSFETs N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
auf Bestellung 1440 Stücke:
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1+4.47 EUR
10+2.97 EUR
100+2.06 EUR
500+1.72 EUR
3000+1.46 EUR
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STP16N65M2 STP16N65M2 STMicroelectronics en.DM00140964.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 956 Stücke:
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1+4.52 EUR
10+1.64 EUR
100+1.54 EUR
500+1.49 EUR
1000+1.43 EUR
2000+1.42 EUR
5000+1.39 EUR
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STP16N65M5 ST en.CD00218186.pdf Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 20 Stücke:
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5+7.16 EUR
Mindestbestellmenge: 5
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STP16N65M5 STP16N65M5 STMicroelectronics en.CD00218186.pdf Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 990 Stücke:
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3+6 EUR
50+2.94 EUR
100+2.77 EUR
500+2.27 EUR
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STP16N65M5 STP16N65M5 STMicroelectronics en.CD00218186.pdf MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.02 EUR
10+2.96 EUR
100+2.78 EUR
500+2.29 EUR
1000+2.11 EUR
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STP26N65DM2 STP26N65DM2 STMicroelectronics stp26n65dm2.pdf Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
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3+6.28 EUR
10+4.14 EUR
100+2.92 EUR
500+2.4 EUR
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STU16N65M2 STU16N65M2 STMicroelectronics en.DM00140964.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 828 Stücke:
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1+3.8 EUR
10+1.76 EUR
100+1.61 EUR
500+1.38 EUR
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STU16N65M2 STU16N65M2 STMicroelectronics en.DM00140964.pdf Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
75+1.71 EUR
150+1.51 EUR
525+1.33 EUR
1050+1.32 EUR
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STU6N65M2 STU6N65M2 STMicroelectronics en.DM00128198.pdf MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2845 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.06 EUR
10+0.75 EUR
100+0.74 EUR
500+0.71 EUR
1000+0.66 EUR
3000+0.62 EUR
Mindestbestellmenge: 2
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STW56N65DM2 STW56N65DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65DM2 STW56N65DM2 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.77 EUR
30+9.25 EUR
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STW56N65DM2 STW56N65DM2 STMicroelectronics STW56N65DM2.pdf MOSFETs N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag
auf Bestellung 238 Stücke:
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1+15.88 EUR
10+9.59 EUR
100+9.19 EUR
600+8.82 EUR
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STW56N65M2 STW56N65M2 STMicroelectronics en.DM00151747.pdf Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 96 Stücke:
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2+14.59 EUR
30+8.61 EUR
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TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba 1C96D791A4A8C285719F555DBBF2CC464C3B4361BBF24DB6282E427A056B7D3E.pdf SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.09 EUR
10+8.27 EUR
120+6.42 EUR
510+5.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 WMK16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
34+2.13 EUR
42+1.72 EUR
56+1.29 EUR
100+1.16 EUR
250+1.07 EUR
Mindestbestellmenge: 28
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WMK16N65C2 WMK16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.56 EUR
34+2.13 EUR
42+1.72 EUR
56+1.29 EUR
100+1.16 EUR
250+1.07 EUR
500+1.03 EUR
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IXFH26N65X2 K248734.pdf
IXFH26N65X2
Hersteller: IXYS
MOSFETs TO247 650V 26A N-CH X2CLASS
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.11 EUR
10+12.25 EUR
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IXFH26N65X2 K248734.pdf
IXFH26N65X2
Hersteller: IXYS
Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.25 EUR
30+11.84 EUR
120+11.33 EUR
510+11.15 EUR
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IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 242 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.76 EUR
Mindestbestellmenge: 10
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IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 242 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.76 EUR
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IXFH46N65X2 Littelfuse-Discrete-MOSFETs-N-Channel-Ultra-Junction-IXFH46N65X2-Datasheet.PDF
IXFH46N65X2
Hersteller: IXYS
MOSFETs MOSFET 650V/46A Ultra Junction X2
auf Bestellung 403 Stücke:
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Anzahl Preis
1+13.46 EUR
10+9.86 EUR
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IXFH46N65X2 littelfuse-discrete-mosfets-ixfh46n65x2-datasheet?assetguid=ad91230a-7477-47d1-9aed-c4a5de3b76d9
IXFH46N65X2
Hersteller: IXYS
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 4257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.05 EUR
30+10.19 EUR
120+8.68 EUR
510+8.14 EUR
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IXFH46N65X2W ixfh64n65x2w-datasheet?assetguid=8f26fe38-2800-4147-8599-7c18fc4773c8
Hersteller: IXYS
Description: 650V 69m 46A X2-Class HiPerFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.72 EUR
30+9.34 EUR
120+7.93 EUR
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IXFH46N65X2W Power_Semiconductor_Discrete_MOSFET_IXFH46N65X2W_Datasheet.pdf
IXFH46N65X2W
Hersteller: IXYS
MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.51 EUR
10+12.13 EUR
120+10.1 EUR
510+8.99 EUR
1020+8.01 EUR
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IXFH46N65X3 littelfuse_discrete_mosfets_n_channel_ultra_junction_ixfh46n65x3_datasheet.pdf
IXFH46N65X3
Hersteller: IXYS
MOSFETs TO247 650V 46A N-CH X3CLASS
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.4 EUR
10+12.06 EUR
120+8.91 EUR
510+8.84 EUR
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IXFH46N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet?assetguid=516ae25a-80b7-429d-bae3-33030177c1a6
IXFH46N65X3
Hersteller: IXYS
Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.66 EUR
10+11.77 EUR
300+8.22 EUR
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+9.01 EUR
10+8.34 EUR
Mindestbestellmenge: 8
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
8+9.01 EUR
10+8.34 EUR
50+7.19 EUR
Mindestbestellmenge: 8
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IXFP26N65X2 238_K248734.pdf
IXFP26N65X2
Hersteller: IXYS
Description: IXFP26N65X2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16 EUR
50+8.93 EUR
100+8.25 EUR
Mindestbestellmenge: 2
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KSM6----N6--5-- Plastic_Knobs.pdf
KSM6----N6--5--
Hersteller: Essentra Components
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.52 EUR
13+1.42 EUR
25+1.3 EUR
50+1.22 EUR
100+1.15 EUR
250+1.07 EUR
500+1.01 EUR
1000+0.97 EUR
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SIHA6N65E-GE3 siha6n65e.pdf
SIHA6N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.19 EUR
10+2.71 EUR
100+1.86 EUR
500+1.5 EUR
Mindestbestellmenge: 5
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SIHA6N65E-GE3 siha6n65e.pdf
SIHA6N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.39 EUR
Mindestbestellmenge: 1000
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SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 5747 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.27 EUR
10+1.41 EUR
100+1.3 EUR
500+1.23 EUR
1000+1.14 EUR
3000+1.06 EUR
6000+1.02 EUR
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SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
75+1.41 EUR
150+1.3 EUR
525+1.22 EUR
1050+1.13 EUR
2025+1.05 EUR
Mindestbestellmenge: 8
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SIHF6N65E-GE3 sihf6n65e.pdf
SIHF6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 896 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.95 EUR
10+3.2 EUR
100+2.36 EUR
500+1.99 EUR
1000+1.62 EUR
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SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.45 EUR
10+2.87 EUR
100+2.06 EUR
500+1.72 EUR
1000+1.68 EUR
3000+1.55 EUR
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SIHP6N65E-GE3 sihp6n65e.pdf
SIHP6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.38 EUR
10+2.85 EUR
100+2.09 EUR
500+1.76 EUR
1000+1.46 EUR
2000+1.45 EUR
5000+1.44 EUR
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SIHU6N65E-GE3 sihu6n65e.pdf
SIHU6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.78 EUR
10+2.43 EUR
100+1.65 EUR
500+1.37 EUR
1000+1.21 EUR
3000+1.08 EUR
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STB6N65K3
STB6N65K3
Hersteller: STMicroelectronics
MOSFETs PTD HIGH VOLTAGE
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.08 EUR
10+1.99 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.97 EUR
2000+0.89 EUR
5000+0.84 EUR
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STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.31 EUR
Mindestbestellmenge: 2500
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STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.36 EUR
10+2.71 EUR
100+1.95 EUR
500+1.61 EUR
1000+1.54 EUR
2500+1.36 EUR
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STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2518 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.75 EUR
100+1.94 EUR
500+1.6 EUR
Mindestbestellmenge: 6
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STD16N65M5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A593DEAA40D2&compId=std16n65m5.pdf?ci_sign=f4c198efa440c3ee96d5804406f893b7d2a7e28f
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.32 EUR
36+2 EUR
Mindestbestellmenge: 31
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STD16N65M5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD80B9A593DEAA40D2&compId=std16n65m5.pdf?ci_sign=f4c198efa440c3ee96d5804406f893b7d2a7e28f
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2343 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.32 EUR
36+2 EUR
Mindestbestellmenge: 31
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STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 4600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.82 EUR
Mindestbestellmenge: 2500
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STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.79 EUR
100+2.4 EUR
500+2.2 EUR
Mindestbestellmenge: 6
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STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 954 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.43 EUR
10+2.73 EUR
100+2.36 EUR
500+2.18 EUR
2500+1.87 EUR
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STD6N65M2 en.DM00127825.pdf
STD6N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 3217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.4 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
2500+0.61 EUR
5000+0.55 EUR
Mindestbestellmenge: 2
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STD6N65M2 en.DM00127825.pdf
STD6N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 1020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
13+1.42 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 9
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
41+1.76 EUR
50+1.59 EUR
Mindestbestellmenge: 30
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.46 EUR
41+1.76 EUR
50+1.59 EUR
100+1.54 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
Mindestbestellmenge: 13
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 957 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.29 EUR
10+1.2 EUR
Mindestbestellmenge: 3
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STF16N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E9B355D08F4745&compId=STF16N65M5.pdf?ci_sign=4c97b280c8bbd87509bc814f608dbbebbb69218e
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.47 EUR
28+2.6 EUR
29+2.47 EUR
Mindestbestellmenge: 21
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STF16N65M5 pVersion=0046&contRep=ZT&docId=005056AB752F1EE787E9B355D08F4745&compId=STF16N65M5.pdf?ci_sign=4c97b280c8bbd87509bc814f608dbbebbb69218e
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.47 EUR
28+2.6 EUR
29+2.47 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
STF16N65M5 en.CD00218186.pdf
STF16N65M5
Hersteller: STMicroelectronics
MOSFETs N-CH 65V 12A MDMESH
auf Bestellung 9010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.14 EUR
10+2.62 EUR
100+2.38 EUR
500+2.11 EUR
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STF16N65M5 en.CD00218186.pdf
STF16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.12 EUR
50+2.6 EUR
100+2.36 EUR
500+2.03 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
STF26N65DM2 stf26n65dm2.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.156 Ohm typ., 20 A MDmesh DM2 Power MOSFET in a TO-220FP pack
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.51 EUR
10+4.35 EUR
100+3.34 EUR
500+2.97 EUR
1000+2.53 EUR
2000+2.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STF6N65K3 en.CD00297329.pdf
STF6N65K3
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.93 EUR
10+1.56 EUR
1000+1.55 EUR
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STL16N65M2 en.DM00141948.pdf
STL16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 1665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.49 EUR
10+2.97 EUR
100+2.05 EUR
500+1.71 EUR
Mindestbestellmenge: 4
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STL16N65M2 en.DM00141948.pdf
STL16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.325 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.47 EUR
10+2.97 EUR
100+2.06 EUR
500+1.72 EUR
3000+1.46 EUR
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STP16N65M2 en.DM00140964.pdf
STP16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.52 EUR
10+1.64 EUR
100+1.54 EUR
500+1.49 EUR
1000+1.43 EUR
2000+1.42 EUR
5000+1.39 EUR
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STP16N65M5 en.CD00218186.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+7.16 EUR
Mindestbestellmenge: 5
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STP16N65M5 en.CD00218186.pdf
STP16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6 EUR
50+2.94 EUR
100+2.77 EUR
500+2.27 EUR
Mindestbestellmenge: 3
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STP16N65M5 en.CD00218186.pdf
STP16N65M5
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.02 EUR
10+2.96 EUR
100+2.78 EUR
500+2.29 EUR
1000+2.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STP26N65DM2 stp26n65dm2.pdf
STP26N65DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.28 EUR
10+4.14 EUR
100+2.92 EUR
500+2.4 EUR
Mindestbestellmenge: 3
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STU16N65M2 en.DM00140964.pdf
STU16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 828 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.8 EUR
10+1.76 EUR
100+1.61 EUR
500+1.38 EUR
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STU16N65M2 en.DM00140964.pdf
STU16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
75+1.71 EUR
150+1.51 EUR
525+1.33 EUR
1050+1.32 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
STU6N65M2 en.DM00128198.pdf
STU6N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.06 EUR
10+0.75 EUR
100+0.74 EUR
500+0.71 EUR
1000+0.66 EUR
3000+0.62 EUR
Mindestbestellmenge: 2
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STW56N65DM2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8
STW56N65DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.77 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65DM2 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B796C1EF19FD5E28&compId=STW56N65DM2-DTE.pdf?ci_sign=014030dd2619b39ad0d4d3a44f5c254dbcac94b8
STW56N65DM2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 650V; 30A; 360W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 360W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 58mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+10.77 EUR
30+9.25 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65DM2 STW56N65DM2.pdf
STW56N65DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET in a TO-247 packag
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.88 EUR
10+9.59 EUR
100+9.19 EUR
600+8.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STW56N65M2 en.DM00151747.pdf
STW56N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.59 EUR
30+8.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TRS16N65FB,S1Q 1C96D791A4A8C285719F555DBBF2CC464C3B4361BBF24DB6282E427A056B7D3E.pdf
TRS16N65FB,S1Q
Hersteller: Toshiba
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.09 EUR
10+8.27 EUR
120+6.42 EUR
510+5.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
34+2.13 EUR
42+1.72 EUR
56+1.29 EUR
100+1.16 EUR
250+1.07 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
WMK16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 412 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.56 EUR
34+2.13 EUR
42+1.72 EUR
56+1.29 EUR
100+1.16 EUR
250+1.07 EUR
500+1.03 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
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