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IXFH26N65X2 IXFH26N65X2 IXYS media-3323918.pdf MOSFETs TO247 650V 26A N-CH X2CLASS
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.24 EUR
10+18.62 EUR
30+12.41 EUR
120+12.25 EUR
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IXFH26N65X2 IXFH26N65X2 Littelfuse Inc. media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.62 EUR
30+12.51 EUR
120+11.29 EUR
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.93 EUR
9+8.08 EUR
Mindestbestellmenge: 6
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IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.93 EUR
9+8.08 EUR
Mindestbestellmenge: 6
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IXFH46N65X2 IXFH46N65X2 IXYS media-3322517.pdf MOSFETs MOSFET 650V/46A Ultra Junction X2
auf Bestellung 214 Stücke:
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1+11.49 EUR
30+9.86 EUR
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IXFH46N65X2 IXFH46N65X2 Littelfuse Inc. littelfuse-discrete-mosfets-ixfh46n65x2-datasheet?assetguid=ad91230a-7477-47d1-9aed-c4a5de3b76d9 Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.58 EUR
30+9.09 EUR
Mindestbestellmenge: 2
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IXFH46N65X3 IXFH46N65X3 Littelfuse Inc. media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.15 EUR
10+10.85 EUR
300+8.14 EUR
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IXFH46N65X3 IXFH46N65X3 IXYS media-3320569.pdf MOSFETs TO247 650V 46A N-CH X3CLASS
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.96 EUR
10+12.06 EUR
30+10.89 EUR
120+9.66 EUR
270+9.49 EUR
510+9.05 EUR
1020+8.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFP26N65X2 IXFP26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.33 EUR
10+7.16 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
7+11.33 EUR
10+7.16 EUR
1000+6.88 EUR
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IXFP26N65X2 Littelfuse Inc. media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Description: IXFP26N65X2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.49 EUR
50+9.17 EUR
100+8.54 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS media-3323918.pdf MOSFETs TO220 650V 26A N-CH X2CLASS
auf Bestellung 100 Stücke:
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1+15.36 EUR
10+13.85 EUR
50+9.10 EUR
100+9.08 EUR
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KSM6----N6--5-- KSM6----N6--5-- Essentra Components Plastic_Knobs.pdf Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.04 EUR
7+2.56 EUR
10+2.39 EUR
25+2.19 EUR
50+2.06 EUR
100+1.94 EUR
250+1.81 EUR
500+1.72 EUR
1000+1.64 EUR
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SIHA6N65E-GE3 SIHA6N65E-GE3 Vishay Siliconix siha6n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
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1000+1.55 EUR
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SIHA6N65E-GE3 SIHA6N65E-GE3 Vishay Siliconix siha6n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+3.03 EUR
100+2.08 EUR
500+1.68 EUR
Mindestbestellmenge: 4
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay / Siliconix sihd6n65e.pdf MOSFETs 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 8990 Stücke:
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2+2.18 EUR
10+1.60 EUR
100+1.46 EUR
250+1.45 EUR
500+1.36 EUR
1000+1.27 EUR
3000+1.20 EUR
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay Siliconix sihd6n65e.pdf Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 3000 Stücke:
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5+3.94 EUR
75+1.80 EUR
150+1.62 EUR
525+1.37 EUR
1050+1.26 EUR
2025+1.17 EUR
Mindestbestellmenge: 5
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SIHF6N65E-GE3 SIHF6N65E-GE3 Vishay / Siliconix sihf6n65e.pdf MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.42 EUR
10+3.27 EUR
100+2.60 EUR
250+2.41 EUR
500+2.18 EUR
1000+1.88 EUR
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SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 Vishay Semiconductors sihj6n65e.pdf MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5737 Stücke:
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1+3.94 EUR
10+2.85 EUR
100+2.20 EUR
500+1.83 EUR
1000+1.61 EUR
3000+1.55 EUR
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SIHP6N65E-GE3 SIHP6N65E-GE3 Vishay / Siliconix sihp6n65e.pdf MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.91 EUR
10+2.82 EUR
100+2.13 EUR
250+1.85 EUR
500+1.78 EUR
1000+1.56 EUR
2000+1.52 EUR
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SIHU6N65E-GE3 SIHU6N65E-GE3 Vishay / Siliconix sihu6n65e.pdf MOSFETs 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2701 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.29 EUR
10+2.29 EUR
75+1.81 EUR
300+1.67 EUR
525+1.52 EUR
1050+1.30 EUR
2550+1.23 EUR
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STB6N65K3 STB6N65K3 STMicroelectronics MOSFETs PTD HIGH VOLTAGE
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.36 EUR
10+1.94 EUR
100+1.51 EUR
500+1.28 EUR
1000+1.04 EUR
2000+0.98 EUR
5000+0.93 EUR
Mindestbestellmenge: 2
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STD16N65M2 STD16N65M2 STMicroelectronics std16n65m2-1850321.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 5454 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.43 EUR
10+2.71 EUR
100+1.94 EUR
500+1.59 EUR
1000+1.50 EUR
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STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2318 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.86 EUR
10+3.14 EUR
100+2.16 EUR
500+1.75 EUR
1000+1.61 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
23+3.12 EUR
27+2.75 EUR
28+2.60 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2416 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.55 EUR
23+3.12 EUR
27+2.75 EUR
28+2.60 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 5000 Stücke:
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2500+2.23 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7816 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.62 EUR
10+4.34 EUR
100+3.05 EUR
500+2.50 EUR
1000+2.32 EUR
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STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5-1850551.pdf MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 4151 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.54 EUR
10+3.96 EUR
25+3.94 EUR
100+2.87 EUR
500+2.46 EUR
1000+2.31 EUR
2500+2.29 EUR
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STD6N65M2 STD6N65M2 STMicroelectronics en.DM00127825.pdf Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 1792 Stücke:
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STD6N65M2 STD6N65M2 STMicroelectronics stb6n65m2-1850048.pdf MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
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2+2.11 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 78 Stücke:
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28+2.65 EUR
43+1.70 EUR
45+1.62 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
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43+1.70 EUR
45+1.62 EUR
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STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 998 Stücke:
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STF16N65M2 STF16N65M2 STMicroelectronics stf16n65m2-1850541.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
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1+3.73 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics STF16N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 30 Stücke:
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19+3.93 EUR
21+3.55 EUR
27+2.72 EUR
28+2.56 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics STF16N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
21+3.55 EUR
27+2.72 EUR
28+2.56 EUR
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STF16N65M5 STF16N65M5 STMicroelectronics stf16n65m5-1850542.pdf MOSFETs N-CH 65V 12A MDMESH
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STF16N65M5 STF16N65M5 STMicroelectronics en.CD00218186.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1610 Stücke:
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3+6.97 EUR
50+3.56 EUR
100+3.23 EUR
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STF26N65DM2 STMicroelectronics stf26n65dm2-1850822.pdf MOSFETs N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
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1+5.93 EUR
10+4.98 EUR
25+3.54 EUR
100+3.27 EUR
250+3.19 EUR
500+3.08 EUR
1000+2.89 EUR
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STF6N65K3 STF6N65K3 STMicroelectronics stf6n65k3-1850651.pdf MOSFETs N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 816 Stücke:
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1+3.91 EUR
10+1.85 EUR
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STF6N65M2 STF6N65M2 STMicroelectronics stf6n65m2-1379793.pdf MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
auf Bestellung 1596 Stücke:
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2+2.18 EUR
10+1.33 EUR
100+1.25 EUR
500+1.02 EUR
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STL16N65M2 STL16N65M2 STMicroelectronics en.DM00141948.pdf Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2515 Stücke:
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4+5.10 EUR
10+3.31 EUR
100+2.29 EUR
500+1.85 EUR
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STL16N65M2 STL16N65M2 STMicroelectronics stl16n65m2-1851064.pdf MOSFETs N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
auf Bestellung 1500 Stücke:
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1+5.07 EUR
10+3.29 EUR
100+2.27 EUR
500+1.85 EUR
1000+1.66 EUR
3000+1.61 EUR
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STP16N65M2 STP16N65M2 STMicroelectronics stp16n65m2-1851504.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 976 Stücke:
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1+3.47 EUR
10+1.52 EUR
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STP26N65DM2 STP26N65DM2 STMicroelectronics stp26n65dm2.pdf Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
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3+7.30 EUR
10+4.81 EUR
100+3.40 EUR
500+2.79 EUR
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STU16N65M2 STU16N65M2 STMicroelectronics en.DM00140964.pdf MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 958 Stücke:
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1+4.68 EUR
10+2.29 EUR
100+2.09 EUR
500+1.80 EUR
1000+1.60 EUR
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STU16N65M2 STU16N65M2 STMicroelectronics en.DM00140964.pdf Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 10477 Stücke:
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4+5.07 EUR
75+2.37 EUR
150+2.15 EUR
525+1.83 EUR
1050+1.69 EUR
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5025+1.55 EUR
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STU6N65M2 STU6N65M2 STMicroelectronics stf6n65m2-1379793.pdf MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2900 Stücke:
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2+2.69 EUR
10+1.19 EUR
100+1.06 EUR
500+0.89 EUR
1000+0.79 EUR
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STW56N65DM2 STW56N65DM2 STMicroelectronics stw56n65dm2-1852254.pdf MOSFETs N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 267 Stücke:
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1+17.20 EUR
10+15.59 EUR
25+11.42 EUR
100+10.17 EUR
250+10.16 EUR
600+10.03 EUR
1200+9.82 EUR
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STW56N65M2 STW56N65M2 STMicroelectronics en.DM00151747.pdf Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 114 Stücke:
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2+16.30 EUR
30+9.61 EUR
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TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba Semiconductor and Storage datasheet_en_20200703.pdf?did=69235 Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 137 Stücke:
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2+11.19 EUR
30+6.41 EUR
120+5.36 EUR
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TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba TRS16N65FB_datasheet_en_20200703-1891865.pdf SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.39 EUR
10+9.54 EUR
120+7.96 EUR
510+7.02 EUR
1020+6.32 EUR
2520+6.04 EUR
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WMJ26N65C2 WMJ26N65C2 WAYON WMx26N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
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WMK16N65C2 WMK16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 437 Stücke:
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23+3.12 EUR
28+2.59 EUR
35+2.07 EUR
64+1.13 EUR
68+1.06 EUR
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WMK36N65C4 WMK36N65C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.23 EUR
19+3.82 EUR
24+3.00 EUR
26+2.83 EUR
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WML26N65C4 WML26N65C4 WAYON WMx26N65C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
33+2.17 EUR
43+1.67 EUR
46+1.59 EUR
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WMN16N65C2 WMN16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
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48+1.49 EUR
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WMO16N65C2 WMO16N65C2 WAYON WMx16N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.23 EUR
66+1.09 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 59
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MPF06N65
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
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IXFH26N65X2 media-3323918.pdf
IXFH26N65X2
Hersteller: IXYS
MOSFETs TO247 650V 26A N-CH X2CLASS
auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.24 EUR
10+18.62 EUR
30+12.41 EUR
120+12.25 EUR
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IXFH26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFH26N65X2
Hersteller: Littelfuse Inc.
Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.62 EUR
30+12.51 EUR
120+11.29 EUR
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.93 EUR
9+8.08 EUR
Mindestbestellmenge: 6
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IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 293 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.93 EUR
9+8.08 EUR
Mindestbestellmenge: 6
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IXFH46N65X2 media-3322517.pdf
IXFH46N65X2
Hersteller: IXYS
MOSFETs MOSFET 650V/46A Ultra Junction X2
auf Bestellung 214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.49 EUR
30+9.86 EUR
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IXFH46N65X2 littelfuse-discrete-mosfets-ixfh46n65x2-datasheet?assetguid=ad91230a-7477-47d1-9aed-c4a5de3b76d9
IXFH46N65X2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.58 EUR
30+9.09 EUR
Mindestbestellmenge: 2
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IXFH46N65X3 media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet
IXFH46N65X3
Hersteller: Littelfuse Inc.
Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.15 EUR
10+10.85 EUR
300+8.14 EUR
Mindestbestellmenge: 2
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IXFH46N65X3 media-3320569.pdf
IXFH46N65X3
Hersteller: IXYS
MOSFETs TO247 650V 46A N-CH X3CLASS
auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.96 EUR
10+12.06 EUR
30+10.89 EUR
120+9.66 EUR
270+9.49 EUR
510+9.05 EUR
1020+8.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFP26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.33 EUR
10+7.16 EUR
Mindestbestellmenge: 7
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IXFP26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+11.33 EUR
10+7.16 EUR
1000+6.88 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFP26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
Hersteller: Littelfuse Inc.
Description: IXFP26N65X2
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.49 EUR
50+9.17 EUR
100+8.54 EUR
Mindestbestellmenge: 2
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IXFP26N65X2 media-3323918.pdf
IXFP26N65X2
Hersteller: IXYS
MOSFETs TO220 650V 26A N-CH X2CLASS
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.36 EUR
10+13.85 EUR
50+9.10 EUR
100+9.08 EUR
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KSM6----N6--5-- Plastic_Knobs.pdf
KSM6----N6--5--
Hersteller: Essentra Components
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
7+2.56 EUR
10+2.39 EUR
25+2.19 EUR
50+2.06 EUR
100+1.94 EUR
250+1.81 EUR
500+1.72 EUR
1000+1.64 EUR
Mindestbestellmenge: 6
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SIHA6N65E-GE3 siha6n65e.pdf
SIHA6N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.55 EUR
Mindestbestellmenge: 1000
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SIHA6N65E-GE3 siha6n65e.pdf
SIHA6N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.03 EUR
100+2.08 EUR
500+1.68 EUR
Mindestbestellmenge: 4
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SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.60 EUR
100+1.46 EUR
250+1.45 EUR
500+1.36 EUR
1000+1.27 EUR
3000+1.20 EUR
Mindestbestellmenge: 2
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SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
75+1.80 EUR
150+1.62 EUR
525+1.37 EUR
1050+1.26 EUR
2025+1.17 EUR
Mindestbestellmenge: 5
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SIHF6N65E-GE3 sihf6n65e.pdf
SIHF6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.42 EUR
10+3.27 EUR
100+2.60 EUR
250+2.41 EUR
500+2.18 EUR
1000+1.88 EUR
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SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.94 EUR
10+2.85 EUR
100+2.20 EUR
500+1.83 EUR
1000+1.61 EUR
3000+1.55 EUR
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SIHP6N65E-GE3 sihp6n65e.pdf
SIHP6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.91 EUR
10+2.82 EUR
100+2.13 EUR
250+1.85 EUR
500+1.78 EUR
1000+1.56 EUR
2000+1.52 EUR
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SIHU6N65E-GE3 sihu6n65e.pdf
SIHU6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.29 EUR
10+2.29 EUR
75+1.81 EUR
300+1.67 EUR
525+1.52 EUR
1050+1.30 EUR
2550+1.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STB6N65K3
STB6N65K3
Hersteller: STMicroelectronics
MOSFETs PTD HIGH VOLTAGE
auf Bestellung 1992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+1.94 EUR
100+1.51 EUR
500+1.28 EUR
1000+1.04 EUR
2000+0.98 EUR
5000+0.93 EUR
Mindestbestellmenge: 2
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STD16N65M2 std16n65m2-1850321.pdf
STD16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 5454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.43 EUR
10+2.71 EUR
100+1.94 EUR
500+1.59 EUR
1000+1.50 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.14 EUR
100+2.16 EUR
500+1.75 EUR
1000+1.61 EUR
Mindestbestellmenge: 4
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STD16N65M5 std16n65m5.pdf
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.55 EUR
23+3.12 EUR
27+2.75 EUR
28+2.60 EUR
Mindestbestellmenge: 21
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STD16N65M5 std16n65m5.pdf
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2416 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.55 EUR
23+3.12 EUR
27+2.75 EUR
28+2.60 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.23 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.62 EUR
10+4.34 EUR
100+3.05 EUR
500+2.50 EUR
1000+2.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STD16N65M5 std16n65m5-1850551.pdf
STD16N65M5
Hersteller: STMicroelectronics
MOSFETs N-Ch 650 Volt 12 Amp
auf Bestellung 4151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.54 EUR
10+3.96 EUR
25+3.94 EUR
100+2.87 EUR
500+2.46 EUR
1000+2.31 EUR
2500+2.29 EUR
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STD6N65M2 en.DM00127825.pdf
STD6N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 1792 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.65 EUR
100+1.10 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STD6N65M2 stb6n65m2-1850048.pdf
STD6N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.11 EUR
10+1.49 EUR
100+1.02 EUR
500+0.81 EUR
1000+0.74 EUR
2500+0.67 EUR
5000+0.64 EUR
Mindestbestellmenge: 2
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
43+1.70 EUR
45+1.62 EUR
Mindestbestellmenge: 28
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
28+2.65 EUR
43+1.70 EUR
45+1.62 EUR
250+1.60 EUR
500+1.56 EUR
Mindestbestellmenge: 28
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STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
50+2.31 EUR
100+2.08 EUR
500+1.68 EUR
Mindestbestellmenge: 4
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STF16N65M2 stf16n65m2-1850541.pdf
STF16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.73 EUR
10+1.50 EUR
100+1.43 EUR
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STF16N65M5 STF16N65M5.pdf
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
21+3.55 EUR
27+2.72 EUR
28+2.56 EUR
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STF16N65M5 STF16N65M5.pdf
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 279mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.93 EUR
21+3.55 EUR
27+2.72 EUR
28+2.56 EUR
Mindestbestellmenge: 19
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STF16N65M5 stf16n65m5-1850542.pdf
STF16N65M5
Hersteller: STMicroelectronics
MOSFETs N-CH 65V 12A MDMESH
auf Bestellung 11602 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.82 EUR
25+2.46 EUR
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STF16N65M5 en.CD00218186.pdf
STF16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.97 EUR
50+3.56 EUR
100+3.23 EUR
500+2.65 EUR
1000+2.46 EUR
Mindestbestellmenge: 3
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STF26N65DM2 stf26n65dm2-1850822.pdf
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.93 EUR
10+4.98 EUR
25+3.54 EUR
100+3.27 EUR
250+3.19 EUR
500+3.08 EUR
1000+2.89 EUR
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STF6N65K3 stf6n65k3-1850651.pdf
STF6N65K3
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.91 EUR
10+1.85 EUR
100+1.74 EUR
250+1.71 EUR
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STF6N65M2 stf6n65m2-1379793.pdf
STF6N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
auf Bestellung 1596 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.33 EUR
100+1.25 EUR
500+1.02 EUR
1000+1.01 EUR
Mindestbestellmenge: 2
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STL16N65M2 en.DM00141948.pdf
STL16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2515 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.10 EUR
10+3.31 EUR
100+2.29 EUR
500+1.85 EUR
1000+1.71 EUR
Mindestbestellmenge: 4
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STL16N65M2 stl16n65m2-1851064.pdf
STL16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.07 EUR
10+3.29 EUR
100+2.27 EUR
500+1.85 EUR
1000+1.66 EUR
3000+1.61 EUR
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STP16N65M2 stp16n65m2-1851504.pdf
STP16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.47 EUR
10+1.52 EUR
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STP26N65DM2 stp26n65dm2.pdf
STP26N65DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.30 EUR
10+4.81 EUR
100+3.40 EUR
500+2.79 EUR
Mindestbestellmenge: 3
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STU16N65M2 en.DM00140964.pdf
STU16N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.68 EUR
10+2.29 EUR
100+2.09 EUR
500+1.80 EUR
1000+1.60 EUR
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STU16N65M2 en.DM00140964.pdf
STU16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 10477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.07 EUR
75+2.37 EUR
150+2.15 EUR
525+1.83 EUR
1050+1.69 EUR
2025+1.58 EUR
5025+1.55 EUR
Mindestbestellmenge: 4
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STU6N65M2 stf6n65m2-1379793.pdf
STU6N65M2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.69 EUR
10+1.19 EUR
100+1.06 EUR
500+0.89 EUR
1000+0.79 EUR
3000+0.69 EUR
Mindestbestellmenge: 2
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STW56N65DM2 stw56n65dm2-1852254.pdf
STW56N65DM2
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.20 EUR
10+15.59 EUR
25+11.42 EUR
100+10.17 EUR
250+10.16 EUR
600+10.03 EUR
1200+9.82 EUR
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STW56N65M2 en.DM00151747.pdf
STW56N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.30 EUR
30+9.61 EUR
Mindestbestellmenge: 2
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TRS16N65FB,S1Q datasheet_en_20200703.pdf?did=69235
TRS16N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY SIC 650V 8A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.19 EUR
30+6.41 EUR
120+5.36 EUR
Mindestbestellmenge: 2
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TRS16N65FB,S1Q TRS16N65FB_datasheet_en_20200703-1891865.pdf
TRS16N65FB,S1Q
Hersteller: Toshiba
SiC Schottky Diodes SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.39 EUR
10+9.54 EUR
120+7.96 EUR
510+7.02 EUR
1020+6.32 EUR
2520+6.04 EUR
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WMJ26N65C2 WMx26N65C2.pdf
WMJ26N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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WMK16N65C2 WMx16N65C2.pdf
WMK16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
28+2.59 EUR
35+2.07 EUR
64+1.13 EUR
68+1.06 EUR
Mindestbestellmenge: 23
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WMK36N65C4
WMK36N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 481 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.23 EUR
19+3.82 EUR
24+3.00 EUR
26+2.83 EUR
Mindestbestellmenge: 17
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WML26N65C4 WMx26N65C4.pdf
WML26N65C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
33+2.17 EUR
43+1.67 EUR
46+1.59 EUR
Mindestbestellmenge: 30
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WMN16N65C2 WMx16N65C2.pdf
WMN16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.49 EUR
Mindestbestellmenge: 48
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WMO16N65C2 WMx16N65C2.pdf
WMO16N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.23 EUR
66+1.09 EUR
76+0.94 EUR
81+0.89 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
MPF06N65
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
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