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SPA17N80C3 SPA17N80C3
Produktcode: 29151
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Infineon datsdheet-spa17n80c3.pdf description Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 27 Stück:
Lieferzeit 21-28 Tag (e)
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SPB17N80C3 SPB17N80C3
Produktcode: 37324
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Infineon spb17n80c3_rev25_ratio-48451.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)
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167N80 167N80 Hammond Manufacturing 167-1390039.pdf Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+176.97 EUR
10+162.43 EUR
25+158.52 EUR
50+156.09 EUR
100+154.04 EUR
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FQA7N80 FQA7N80 Fairchild Semiconductor FAIRS24241-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 752 Stücke:
Lieferzeit 10-14 Tag (e)
211+2.39 EUR
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FQA7N80C FQA7N80C Fairchild Semiconductor FAIRS24235-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 21325 Stücke:
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FQA7N80C-F109 FQA7N80C-F109 onsemi FQA7N80C_F109-D.PDF Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 14140 Stücke:
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FQP7N80 FQP7N80 Fairchild Semiconductor FAIRS27698-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 6500 Stücke:
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FQPF7N80C FQPF7N80C Fairchild Semiconductor FAIRS46447-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
249+2.04 EUR
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IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
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IXFA7N80P IXFA7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
10+7.15 EUR
17+4.20 EUR
50+2.62 EUR
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IXFA7N80P IXFA7N80P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 257 Stücke:
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3+6.93 EUR
50+3.87 EUR
100+3.55 EUR
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IXFP7N80P IXFP7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.19 EUR
20+3.76 EUR
21+3.56 EUR
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IXFP7N80P IXFP7N80P IXYS IXFA7N80P_IXFP7N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.19 EUR
20+3.76 EUR
21+3.56 EUR
500+3.46 EUR
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IXFP7N80P IXFP7N80P IXYS media-3322436.pdf MOSFETs 7 Amps 800V 1.44 Rds
auf Bestellung 94 Stücke:
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1+7.36 EUR
10+7.34 EUR
50+4.35 EUR
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IXFP7N80P IXFP7N80P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.67 EUR
50+4.30 EUR
100+3.96 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
3+25.67 EUR
10+24.87 EUR
30+24.68 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
3+25.67 EUR
10+24.87 EUR
30+24.68 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
1+46.27 EUR
30+29.90 EUR
120+28.47 EUR
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MSJB17N80-TP MSJB17N80-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.10 EUR
10+6.06 EUR
100+4.34 EUR
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SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay Siliconix siha17n80ae.pdf Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+3.82 EUR
100+2.66 EUR
500+2.17 EUR
1000+2.01 EUR
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SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay / Siliconix siha17n80ae.pdf MOSFETs TO220 800V 7A N-CH MOSFET
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.12 EUR
10+2.48 EUR
100+2.20 EUR
250+2.15 EUR
500+2.01 EUR
1000+1.95 EUR
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SIHA17N80AEF-GE3 SIHA17N80AEF-GE3 Vishay Siliconix siha17n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
10+4.39 EUR
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SIHA17N80E-E3 SIHA17N80E-E3 Vishay Siliconix siha17n80e.pdf Description: MOSFET N-CHANNEL 800V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
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SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.68 EUR
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SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.61 EUR
10+6.42 EUR
100+4.61 EUR
500+3.84 EUR
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SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay / Siliconix siha17n80e.pdf MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.33 EUR
10+6.27 EUR
100+4.52 EUR
500+3.80 EUR
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SIHB17N80AE-GE3 SIHB17N80AE-GE3 Vishay Siliconix sihb17n80ae.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 983 Stücke:
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SIHB17N80AE-GE3 SIHB17N80AE-GE3 Vishay / Siliconix sihb17n80ae.pdf MOSFETs TO263 800V 15A N-CH MOSFET
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SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Semiconductors sihb17n80e.pdf MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
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1000+4.24 EUR
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SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 888 Stücke:
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay Siliconix sihg17n80ae.pdf Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 748 Stücke:
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay / Siliconix sihg17n80ae.pdf MOSFETs TO247 800V 15A N-CH MOSFET
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1000+2.45 EUR
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SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay Siliconix sihg17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 294 Stücke:
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SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay / Siliconix sihg17n80aef.pdf MOSFETs TO247 800V 15A N-CH MOSFET
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SIHG17N80E-GE3 SIHG17N80E-GE3 Vishay / Siliconix sihg17n80e.pdf MOSFETs 800V Vds 30V Vgs TO-247AC
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SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay / Siliconix sihp17n80ae.pdf MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.86 EUR
10+2.96 EUR
100+2.68 EUR
500+2.18 EUR
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SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay Siliconix sihp17n80ae.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 899 Stücke:
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SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay Siliconix sihp17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 928 Stücke:
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SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay / Siliconix sihp17n80aef.pdf MOSFETs TO220 800V 15A N-CH MOSFET
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SIHP17N80E-BE3 SIHP17N80E-BE3 Vishay / Siliconix sihp17n80e.pdf MOSFETs TO220 800V 15A N-CH MOSFET
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1000+4.08 EUR
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SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay / Siliconix sihp17n80e.pdf MOSFETs 800V Vds 30V Vgs TO-220AB
auf Bestellung 2432 Stücke:
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1+7.60 EUR
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SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay Siliconix sihp17n80e.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
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3+7.67 EUR
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SPA17N80C3 SPA17N80C3 Infineon Technologies Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf description MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 3626 Stücke:
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1+7.20 EUR
10+5.72 EUR
25+5.39 EUR
100+4.61 EUR
250+4.56 EUR
500+3.85 EUR
1000+3.52 EUR
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SPA17N80C3XK SPA17N80C3XK Infineon Technologies Infineon-SPA17N80C3-DS-v02_08-EN-1226622.pdf MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.87 EUR
10+5.95 EUR
25+5.28 EUR
100+4.61 EUR
250+4.22 EUR
500+3.91 EUR
1000+3.68 EUR
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SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 161 Stücke:
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3+8.40 EUR
50+4.37 EUR
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SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 514 Stücke:
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10+7.18 EUR
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250+3.89 EUR
500+3.52 EUR
1000+3.29 EUR
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES SPB17N80C3-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
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SPB17N80C3 Infineon Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
5+9.43 EUR
Mindestbestellmenge: 5
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SPB17N80C3 SPB17N80C3 Infineon Technologies Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 4166 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.57 EUR
10+6.02 EUR
25+5.67 EUR
100+4.86 EUR
250+4.59 EUR
500+4.33 EUR
1000+3.52 EUR
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SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
10+5.81 EUR
100+4.15 EUR
500+3.45 EUR
Mindestbestellmenge: 3
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SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.37 EUR
Mindestbestellmenge: 1000
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SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 4289 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.96 EUR
10+5.58 EUR
25+5.42 EUR
100+4.08 EUR
250+4.01 EUR
500+3.48 EUR
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
21+3.45 EUR
22+3.33 EUR
23+3.15 EUR
50+3.02 EUR
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.83 EUR
21+3.45 EUR
22+3.33 EUR
23+3.15 EUR
50+3.02 EUR
Mindestbestellmenge: 19
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SPP17N80C3 SPP17N80C3 Infineon Technologies Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf description MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.65 EUR
10+5.95 EUR
25+5.28 EUR
100+5.02 EUR
500+4.26 EUR
1000+4.24 EUR
2500+3.78 EUR
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SPP17N80C3XKSA1 SPP17N80C3XKSA1 Infineon Technologies Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.22 EUR
10+5.86 EUR
25+3.64 EUR
100+3.56 EUR
500+3.48 EUR
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SPP17N80C3XKSA1 SPP17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 1886 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.73 EUR
50+4.56 EUR
100+4.15 EUR
500+3.45 EUR
1000+3.37 EUR
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
30+5.66 EUR
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES SPW17N80C3.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
30+5.66 EUR
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SPA17N80C3
Produktcode: 29151
zu Favoriten hinzufügen Lieblingsprodukt

description datsdheet-spa17n80c3.pdf
SPA17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 27 Stück:
Lieferzeit 21-28 Tag (e)
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SPB17N80C3
Produktcode: 37324
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spb17n80c3_rev25_ratio-48451.pdf
SPB17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 18 Stück:
Lieferzeit 21-28 Tag (e)
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167N80 167-1390039.pdf
167N80
Hersteller: Hammond Manufacturing
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+176.97 EUR
10+162.43 EUR
25+158.52 EUR
50+156.09 EUR
100+154.04 EUR
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FQA7N80 FAIRS24241-1.pdf?t.download=true&u=5oefqw
FQA7N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 752 Stücke:
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Anzahl Preis
211+2.39 EUR
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FQA7N80C FAIRS24235-1.pdf?t.download=true&u=5oefqw
FQA7N80C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 21325 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
275+1.84 EUR
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FQA7N80C-F109 FQA7N80C_F109-D.PDF
FQA7N80C-F109
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 14140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
179+2.83 EUR
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FQP7N80 FAIRS27698-1.pdf?t.download=true&u=5oefqw
FQP7N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.3A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.56 EUR
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FQPF7N80C FAIRS46447-1.pdf?t.download=true&u=5oefqw
FQPF7N80C
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
249+2.04 EUR
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IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IXFA7N80P IXFA7N80P_IXFP7N80P.pdf
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
10+7.15 EUR
17+4.20 EUR
50+2.62 EUR
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IXFA7N80P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE
IXFA7N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.93 EUR
50+3.87 EUR
100+3.55 EUR
Mindestbestellmenge: 3
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IXFP7N80P IXFA7N80P_IXFP7N80P.pdf
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.19 EUR
20+3.76 EUR
21+3.56 EUR
Mindestbestellmenge: 14
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IXFP7N80P IXFA7N80P_IXFP7N80P.pdf
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 29 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.19 EUR
20+3.76 EUR
21+3.56 EUR
500+3.46 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IXFP7N80P media-3322436.pdf
IXFP7N80P
Hersteller: IXYS
MOSFETs 7 Amps 800V 1.44 Rds
auf Bestellung 94 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.36 EUR
10+7.34 EUR
50+4.35 EUR
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IXFP7N80P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE
IXFP7N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
50+4.30 EUR
100+3.96 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+25.67 EUR
10+24.87 EUR
30+24.68 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 119 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+25.67 EUR
10+24.87 EUR
30+24.68 EUR
Mindestbestellmenge: 3
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IXFX27N80Q Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C
IXFX27N80Q
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.27 EUR
30+29.90 EUR
120+28.47 EUR
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MSJB17N80-TP
MSJB17N80-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.10 EUR
10+6.06 EUR
100+4.34 EUR
Mindestbestellmenge: 2
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SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.86 EUR
10+3.82 EUR
100+2.66 EUR
500+2.17 EUR
1000+2.01 EUR
Mindestbestellmenge: 4
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SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 7A N-CH MOSFET
auf Bestellung 1561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+2.48 EUR
100+2.20 EUR
250+2.15 EUR
500+2.01 EUR
1000+1.95 EUR
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SIHA17N80AEF-GE3 siha17n80aef.pdf
SIHA17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
10+4.39 EUR
Mindestbestellmenge: 3
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SIHA17N80E-E3 siha17n80e.pdf
SIHA17N80E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 800V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
Mindestbestellmenge: 2
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SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.68 EUR
Mindestbestellmenge: 1000
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SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.61 EUR
10+6.42 EUR
100+4.61 EUR
500+3.84 EUR
Mindestbestellmenge: 2
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SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.33 EUR
10+6.27 EUR
100+4.52 EUR
500+3.80 EUR
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SIHB17N80AE-GE3 sihb17n80ae.pdf
SIHB17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
50+3.05 EUR
100+2.76 EUR
500+2.25 EUR
Mindestbestellmenge: 3
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SIHB17N80AE-GE3 sihb17n80ae.pdf
SIHB17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO263 800V 15A N-CH MOSFET
auf Bestellung 9878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.91 EUR
10+3.03 EUR
100+2.75 EUR
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SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 7349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.40 EUR
10+6.92 EUR
25+6.53 EUR
100+5.60 EUR
250+5.28 EUR
500+4.98 EUR
1000+4.24 EUR
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SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.99 EUR
10+5.35 EUR
100+3.88 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.90 EUR
25+3.92 EUR
100+3.20 EUR
500+2.63 EUR
Mindestbestellmenge: 3
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SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 15A N-CH MOSFET
auf Bestellung 1622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.65 EUR
10+4.22 EUR
25+3.89 EUR
100+3.19 EUR
500+2.59 EUR
1000+2.45 EUR
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SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
10+4.65 EUR
100+3.28 EUR
Mindestbestellmenge: 3
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SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 15A N-CH MOSFET
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.90 EUR
10+4.58 EUR
100+3.24 EUR
500+2.94 EUR
1000+2.66 EUR
2500+2.52 EUR
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SIHG17N80E-GE3 sihg17n80e.pdf
SIHG17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-247AC
auf Bestellung 673 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.75 EUR
10+7.32 EUR
50+5.95 EUR
100+5.37 EUR
250+5.33 EUR
500+4.82 EUR
1000+4.28 EUR
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SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.86 EUR
10+2.96 EUR
100+2.68 EUR
500+2.18 EUR
1000+1.97 EUR
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SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
50+2.98 EUR
100+2.70 EUR
500+2.20 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.07 EUR
10+3.97 EUR
100+2.77 EUR
500+2.26 EUR
Mindestbestellmenge: 3
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SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.37 EUR
10+3.66 EUR
100+2.60 EUR
500+2.16 EUR
1000+2.04 EUR
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SIHP17N80E-BE3 sihp17n80e.pdf
SIHP17N80E-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 3931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.03 EUR
10+6.55 EUR
25+5.67 EUR
100+5.09 EUR
250+5.02 EUR
500+4.72 EUR
1000+4.08 EUR
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SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-220AB
auf Bestellung 2432 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.60 EUR
10+5.09 EUR
100+4.44 EUR
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SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.67 EUR
10+5.12 EUR
100+3.68 EUR
500+3.67 EUR
Mindestbestellmenge: 3
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SPA17N80C3 description Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf
SPA17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 3626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.20 EUR
10+5.72 EUR
25+5.39 EUR
100+4.61 EUR
250+4.56 EUR
500+3.85 EUR
1000+3.52 EUR
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SPA17N80C3XK Infineon-SPA17N80C3-DS-v02_08-EN-1226622.pdf
SPA17N80C3XK
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.87 EUR
10+5.95 EUR
25+5.28 EUR
100+4.61 EUR
250+4.22 EUR
500+3.91 EUR
1000+3.68 EUR
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SPA17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.40 EUR
50+4.37 EUR
100+3.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3XKSA1 Infineon_SPA17N80C3_DS_v02_08_EN-1732133.pdf
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.62 EUR
10+7.18 EUR
25+4.22 EUR
100+3.92 EUR
250+3.89 EUR
500+3.52 EUR
1000+3.29 EUR
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SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
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SPB17N80C3 SPB17N80C3-DTE.pdf
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.72 EUR
14+5.15 EUR
15+4.88 EUR
250+4.69 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+9.43 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf
SPB17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 4166 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.57 EUR
10+6.02 EUR
25+5.67 EUR
100+4.86 EUR
250+4.59 EUR
500+4.33 EUR
1000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3ATMA1 SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1349 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
10+5.81 EUR
100+4.15 EUR
500+3.45 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3ATMA1 SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.37 EUR
Mindestbestellmenge: 1000
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SPB17N80C3ATMA1 Infineon_SPB17N80C3_DS_v02_05_en-1732134.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 4289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.96 EUR
10+5.58 EUR
25+5.42 EUR
100+4.08 EUR
250+4.01 EUR
500+3.48 EUR
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.45 EUR
22+3.33 EUR
23+3.15 EUR
50+3.02 EUR
Mindestbestellmenge: 19
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 58 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.45 EUR
22+3.33 EUR
23+3.15 EUR
50+3.02 EUR
Mindestbestellmenge: 19
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SPP17N80C3 description Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf
SPP17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.65 EUR
10+5.95 EUR
25+5.28 EUR
100+5.02 EUR
500+4.26 EUR
1000+4.24 EUR
2500+3.78 EUR
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SPP17N80C3XKSA1 Infineon_SPP17N80C3_DS_v02_91_en-3363668.pdf
SPP17N80C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 736 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.22 EUR
10+5.86 EUR
25+3.64 EUR
100+3.56 EUR
500+3.48 EUR
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SPP17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPP17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 1886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
50+4.56 EUR
100+4.15 EUR
500+3.45 EUR
1000+3.37 EUR
Mindestbestellmenge: 3
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SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
30+5.66 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SPW17N80C3 description SPW17N80C3.pdf
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+8.28 EUR
12+5.99 EUR
13+5.68 EUR
30+5.66 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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