Suchergebnisse für "nm50" : > 120

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STF19NM50N STF19NM50N STMicroelectronics 1513442964938983cd002.pdf Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 65495 Stücke:
Lieferzeit 14-21 Tag (e)
STF19NM50N STF19NM50N STMicroelectronics stf19nm50n-1850513.pdf MOSFET POWER MOSFET N-CH 500V
auf Bestellung 844 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.61 EUR
10+ 7.41 EUR
25+ 6.99 EUR
100+ 6.37 EUR
250+ 6.32 EUR
500+ 5.98 EUR
1000+ 5.41 EUR
Mindestbestellmenge: 5
STF19NM50N STF19NM50N STMicroelectronics en.CD00264734.pdf Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 982 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.53 EUR
50+ 8.35 EUR
100+ 7.16 EUR
500+ 6.36 EUR
Mindestbestellmenge: 3
STF23NM50N STF23NM50N STMicroelectronics stf23nm50n-1850567.pdf MOSFET N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
auf Bestellung 480 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.1 EUR
10+ 11.23 EUR
25+ 7.1 EUR
100+ 7.07 EUR
1000+ 6.73 EUR
2000+ 6.37 EUR
Mindestbestellmenge: 4
STF28NM50N STF28NM50N STMicroelectronics stf28nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 13A; Idm: 84A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 13A
Pulsed drain current: 84A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
STF28NM50N STF28NM50N STMicroelectronics stf28nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 13A; Idm: 84A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 13A
Pulsed drain current: 84A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
STF28NM50N STF28NM50N STMicroelectronics stb28nm50n-1850044.pdf MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO
auf Bestellung 1033 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.85 EUR
10+ 13.1 EUR
25+ 10.01 EUR
100+ 9.33 EUR
250+ 9.26 EUR
500+ 8.58 EUR
1000+ 8.06 EUR
Mindestbestellmenge: 4
STF28NM50N STF28NM50N STMicroelectronics en.CD00271786.pdf Description: MOSFET N-CH 500V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
auf Bestellung 823 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.74 EUR
50+ 11.76 EUR
100+ 10.52 EUR
500+ 9.29 EUR
Mindestbestellmenge: 2
STF8NM50N STF8NM50N STMicroelectronics en.DM00042596.pdf Description: MOSFET N-CH 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
auf Bestellung 994 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.11 EUR
50+ 3.3 EUR
100+ 2.71 EUR
500+ 2.29 EUR
Mindestbestellmenge: 7
STP11NM50N STP11NM50N STMicroelectronics STP11NM50N.pdf Description: MOSFET N-CH 500V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
auf Bestellung 524 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.29 EUR
50+ 3.19 EUR
100+ 3.03 EUR
500+ 2.67 EUR
Mindestbestellmenge: 7
STP12NM50 STP12NM50 STMicroelectronics STP12NM50.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.82 EUR
Mindestbestellmenge: 27
STP12NM50 STP12NM50 STMicroelectronics STP12NM50.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.72 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.82 EUR
250+ 1.8 EUR
Mindestbestellmenge: 27
STP12NM50 ST en.CD00002079.pdf description N-MOSFET 12A 500V 160W 0.35Ω STP12NM50 TSTP12NM50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.32 EUR
Mindestbestellmenge: 10
STP12NM50 STP12NM50 STMicroelectronics stb12nm50t4-2956181.pdf description MOSFET N-Ch 500 Volt 12 Amp
auf Bestellung 434 Stücke:
Lieferzeit 14-28 Tag (e)
6+8.79 EUR
10+ 8.53 EUR
25+ 6.73 EUR
100+ 6.08 EUR
500+ 5.8 EUR
1000+ 5.04 EUR
Mindestbestellmenge: 6
STP12NM50 STP12NM50 STMicroelectronics en.cd00002079.pdf description Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 21605 Stücke:
Lieferzeit 14-21 Tag (e)
STP12NM50 STP12NM50 STMicroelectronics en.CD00002079.pdf description Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.3 EUR
50+ 8.16 EUR
100+ 6.99 EUR
500+ 6.21 EUR
Mindestbestellmenge: 3
STP12NM50FP STP12NM50FP STMicroelectronics STP12NM50FP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.02 EUR
26+ 2.77 EUR
35+ 2.09 EUR
37+ 1.97 EUR
Mindestbestellmenge: 24
STP12NM50FP STP12NM50FP STMicroelectronics STP12NM50FP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.02 EUR
26+ 2.77 EUR
35+ 2.09 EUR
37+ 1.97 EUR
250+ 1.94 EUR
Mindestbestellmenge: 24
STP12NM50FP ST en.CD00002079.pdf N-MOSFET 12A 500V 35W STP12NM50FP TSTP12NM50FP
Anzahl je Verpackung: 10 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.36 EUR
Mindestbestellmenge: 10
STP12NM50FP STP12NM50FP STMicroelectronics en.cd00002079.pdf Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
STP12NM50FP STP12NM50FP STMicroelectronics stb12nm50t4-2956181.pdf MOSFET N-Ch 500 Volt 12 Amp
auf Bestellung 767 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.69 EUR
10+ 9.78 EUR
25+ 7.62 EUR
100+ 6.71 EUR
250+ 6.68 EUR
500+ 6.06 EUR
1000+ 5.3 EUR
Mindestbestellmenge: 5
STP12NM50FP STP12NM50FP STMicroelectronics en.CD00002079.pdf Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 895 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.61 EUR
50+ 8.41 EUR
100+ 7.21 EUR
500+ 6.41 EUR
Mindestbestellmenge: 3
STP14NM50N STP14NM50N STMicroelectronics STF14NM50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
40+ 1.82 EUR
42+ 1.7 EUR
Mindestbestellmenge: 36
STP14NM50N STP14NM50N STMicroelectronics STF14NM50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
40+ 1.82 EUR
42+ 1.7 EUR
Mindestbestellmenge: 36
STP14NM50N ST en.CD00257735.pdf Transistor N-Channel MOSFET; 500V; 25V; 320mOhm; 12A; 90W; -55°C ~ 150°C; STP14NM50N TSTP14NM50N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.95 EUR
Mindestbestellmenge: 20
STP14NM50N STP14NM50N STMicroelectronics 818112945102311cd00257735.pdf Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
STP14NM50N STP14NM50N STMicroelectronics stf14nm50n-1850742.pdf MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
auf Bestellung 86 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.31 EUR
10+ 9.18 EUR
25+ 7.41 EUR
100+ 6.34 EUR
500+ 5.64 EUR
1000+ 4.73 EUR
2000+ 4.52 EUR
Mindestbestellmenge: 6
STP14NM50N STP14NM50N STMicroelectronics en.CD00257735.pdf Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
auf Bestellung 817 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.26 EUR
50+ 7.33 EUR
100+ 6.28 EUR
500+ 5.59 EUR
Mindestbestellmenge: 3
STP19NM50N STP19NM50N STMicroelectronics STx19NM50N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 10A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.92 EUR
42+ 1.73 EUR
47+ 1.53 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
STP19NM50N STP19NM50N STMicroelectronics stf19nm50n-1850513.pdf MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power
auf Bestellung 905 Stücke:
Lieferzeit 14-28 Tag (e)
7+7.57 EUR
10+ 6.84 EUR
25+ 6.14 EUR
100+ 4.94 EUR
250+ 4.81 EUR
1000+ 4.71 EUR
2000+ 4.65 EUR
Mindestbestellmenge: 7
STP19NM50N STP19NM50N STMicroelectronics en.CD00264734.pdf Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 972 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.57 EUR
50+ 7.58 EUR
100+ 6.5 EUR
500+ 5.77 EUR
Mindestbestellmenge: 3
STP20NM50 STP20NM50 STMicroelectronics stp20nm50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.7 EUR
22+ 3.35 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 20
STP20NM50 STP20NM50 STMicroelectronics stp20nm50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.7 EUR
22+ 3.35 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 20
STP20NM50 STP20NM50 STMicroelectronics 7682.pdf Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2051 Stücke:
Lieferzeit 14-21 Tag (e)
STP20NM50 STP20NM50 STMicroelectronics stb20nm50-1850251.pdf MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 740 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.7 EUR
10+ 11.88 EUR
25+ 10.17 EUR
100+ 8.84 EUR
250+ 8.5 EUR
500+ 7.98 EUR
1000+ 6.81 EUR
Mindestbestellmenge: 4
STP20NM50 STP20NM50 STMicroelectronics en.CD00002374.pdf Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
auf Bestellung 930 Stücke:
Lieferzeit 21-28 Tag (e)
2+13.62 EUR
50+ 10.8 EUR
100+ 9.26 EUR
500+ 8.23 EUR
Mindestbestellmenge: 2
STP20NM50FD STP20NM50FD STMicroelectronics power-transistors.html Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.92 EUR
21+ 3.52 EUR
26+ 2.76 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
STP20NM50FD STP20NM50FD STMicroelectronics sgsts29971_1-2282276.pdf MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 990 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.22 EUR
10+ 13.91 EUR
25+ 12.61 EUR
100+ 11.57 EUR
250+ 10.89 EUR
500+ 10.22 EUR
1000+ 9.2 EUR
Mindestbestellmenge: 4
STP20NM50FD STP20NM50FD STMicroelectronics power-transistors.html Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
2+16.15 EUR
50+ 12.88 EUR
100+ 11.52 EUR
500+ 10.17 EUR
1000+ 9.15 EUR
Mindestbestellmenge: 2
STP23NM50N STP23NM50N STMicroelectronics 812299290764112cd00259533.pdf Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
STP23NM50N STP23NM50N STMicroelectronics stf23nm50n-1850567.pdf MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
auf Bestellung 921 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.25 EUR
10+ 6.76 EUR
25+ 5.95 EUR
Mindestbestellmenge: 5
STP28NM50N STP28NM50N STMicroelectronics stp28nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+3.98 EUR
Mindestbestellmenge: 18
STP28NM50N STP28NM50N STMicroelectronics stp28nm50n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
18+3.98 EUR
250+ 2.65 EUR
Mindestbestellmenge: 18
STP28NM50N STP28NM50N STMicroelectronics stb28nm50n-1850044.pdf MOSFET N-Ch 500V 0.135 21A MDmesh II
auf Bestellung 916 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.5 EUR
25+ 13.68 EUR
100+ 11.18 EUR
500+ 9.78 EUR
1000+ 8.61 EUR
2000+ 8.22 EUR
Mindestbestellmenge: 4
STP32NM50N STP32NM50N STMicroelectronics en.DM00060101.pdf Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
2+18.25 EUR
Mindestbestellmenge: 2
STP8NM50N STP8NM50N STMicroelectronics STD8NM50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
64+1.13 EUR
73+ 0.99 EUR
82+ 0.88 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 64
STP8NM50N STP8NM50N STMicroelectronics STD8NM50N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
64+1.13 EUR
73+ 0.99 EUR
82+ 0.88 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 64
STP8NM50N ST stp8nm50n.pdf Trans MOSFET N-CH 500V 5A STP8NM50N TSTP8NM50N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.84 EUR
Mindestbestellmenge: 20
STP8NM50N STP8NM50N STMicroelectronics std8nm50n-1850478.pdf MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
auf Bestellung 885 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.98 EUR
15+ 3.48 EUR
100+ 3.07 EUR
250+ 3.04 EUR
500+ 2.4 EUR
Mindestbestellmenge: 14
STP8NM50N STP8NM50N STMicroelectronics en.cd00271067.pdf Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
STP8NM50N STP8NM50N STMicroelectronics stp8nm50n.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
auf Bestellung 988 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.46 EUR
50+ 4.38 EUR
100+ 3.6 EUR
500+ 3.05 EUR
Mindestbestellmenge: 5
STW19NM50N STW19NM50N STMicroelectronics stf19nm50n-1850513.pdf MOSFET POWER MOSFET N-CH 500V 13A
auf Bestellung 476 Stücke:
Lieferzeit 14-28 Tag (e)
4+16.12 EUR
10+ 13.52 EUR
25+ 10.35 EUR
100+ 9.46 EUR
250+ 8.81 EUR
600+ 8.32 EUR
1200+ 7.85 EUR
Mindestbestellmenge: 4
STW20NM50FD ST STW20NM50FD_Jun2002.pdf Transistor N-Channel MOSFET; 500V; 500V; 30V; 250mOhm; 20A; 214W; -65°C ~ 150°C; STW20NM50FD TSTW20NM50FD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+8.86 EUR
Mindestbestellmenge: 5
STW20NM50FD STW20NM50FD STMicroelectronics cd0000247.pdf Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
STW20NM50FD STW20NM50FD STMicroelectronics sgsts26810_1-2282504.pdf MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 1128 Stücke:
Lieferzeit 14-28 Tag (e)
3+18.51 EUR
25+ 12.01 EUR
100+ 11.49 EUR
250+ 10.97 EUR
600+ 10.4 EUR
1200+ 10.04 EUR
Mindestbestellmenge: 3
STW26NM50 STW26NM50 STMicroelectronics STW26NM50-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.9A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.99 EUR
16+ 4.72 EUR
Mindestbestellmenge: 11
STW26NM50 STW26NM50 STMicroelectronics STW26NM50-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.9A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.14 EUR
12+ 6.42 EUR
15+ 4.99 EUR
16+ 4.72 EUR
Mindestbestellmenge: 11
STW26NM50 STW26NM50 STMicroelectronics 232701829016600cd00002680.pdf Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
STW26NM50 STW26NM50 STMicroelectronics stw26nm50-1851953.pdf MOSFET N-Ch 500 Volt 30 Amp
auf Bestellung 555 Stücke:
Lieferzeit 14-28 Tag (e)
2+26.1 EUR
10+ 25.17 EUR
25+ 18.56 EUR
50+ 18.51 EUR
100+ 17.81 EUR
250+ 16.87 EUR
600+ 16.43 EUR
Mindestbestellmenge: 2
STW26NM50 STW26NM50 STMicroelectronics en.CD00002680.pdf Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 328 Stücke:
Lieferzeit 21-28 Tag (e)
2+25.92 EUR
30+ 21 EUR
120+ 19.76 EUR
Mindestbestellmenge: 2
STF19NM50N 1513442964938983cd002.pdf
STF19NM50N
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 65495 Stücke:
Lieferzeit 14-21 Tag (e)
STF19NM50N stf19nm50n-1850513.pdf
STF19NM50N
Hersteller: STMicroelectronics
MOSFET POWER MOSFET N-CH 500V
auf Bestellung 844 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.61 EUR
10+ 7.41 EUR
25+ 6.99 EUR
100+ 6.37 EUR
250+ 6.32 EUR
500+ 5.98 EUR
1000+ 5.41 EUR
Mindestbestellmenge: 5
STF19NM50N en.CD00264734.pdf
STF19NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 982 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.53 EUR
50+ 8.35 EUR
100+ 7.16 EUR
500+ 6.36 EUR
Mindestbestellmenge: 3
STF23NM50N stf23nm50n-1850567.pdf
STF23NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.162 Ohm 17A MDmesh II PWR
auf Bestellung 480 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.1 EUR
10+ 11.23 EUR
25+ 7.1 EUR
100+ 7.07 EUR
1000+ 6.73 EUR
2000+ 6.37 EUR
Mindestbestellmenge: 4
STF28NM50N stf28nm50n.pdf
STF28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 13A; Idm: 84A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 13A
Pulsed drain current: 84A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
STF28NM50N stf28nm50n.pdf
STF28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 13A; Idm: 84A; 35W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 13A
Pulsed drain current: 84A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
STF28NM50N stb28nm50n-1850044.pdf
STF28NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.135 Ohm MDmesh II Power MO
auf Bestellung 1033 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.85 EUR
10+ 13.1 EUR
25+ 10.01 EUR
100+ 9.33 EUR
250+ 9.26 EUR
500+ 8.58 EUR
1000+ 8.06 EUR
Mindestbestellmenge: 4
STF28NM50N en.CD00271786.pdf
STF28NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 21A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 25 V
auf Bestellung 823 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+14.74 EUR
50+ 11.76 EUR
100+ 10.52 EUR
500+ 9.29 EUR
Mindestbestellmenge: 2
STF8NM50N en.DM00042596.pdf
STF8NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
auf Bestellung 994 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.11 EUR
50+ 3.3 EUR
100+ 2.71 EUR
500+ 2.29 EUR
Mindestbestellmenge: 7
STP11NM50N STP11NM50N.pdf
STP11NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 8.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 4.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 547 pF @ 50 V
auf Bestellung 524 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.29 EUR
50+ 3.19 EUR
100+ 3.03 EUR
500+ 2.67 EUR
Mindestbestellmenge: 7
STP12NM50 description STP12NM50.pdf
STP12NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
27+2.72 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.82 EUR
Mindestbestellmenge: 27
STP12NM50 description STP12NM50.pdf
STP12NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 7.5A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 7.5A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.72 EUR
30+ 2.45 EUR
38+ 1.93 EUR
40+ 1.82 EUR
250+ 1.8 EUR
Mindestbestellmenge: 27
STP12NM50 description en.CD00002079.pdf
Hersteller: ST
N-MOSFET 12A 500V 160W 0.35Ω STP12NM50 TSTP12NM50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+5.32 EUR
Mindestbestellmenge: 10
STP12NM50 description stb12nm50t4-2956181.pdf
STP12NM50
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 12 Amp
auf Bestellung 434 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+8.79 EUR
10+ 8.53 EUR
25+ 6.73 EUR
100+ 6.08 EUR
500+ 5.8 EUR
1000+ 5.04 EUR
Mindestbestellmenge: 6
STP12NM50 description en.cd00002079.pdf
STP12NM50
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 21605 Stücke:
Lieferzeit 14-21 Tag (e)
STP12NM50 description en.CD00002079.pdf
STP12NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 697 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.3 EUR
50+ 8.16 EUR
100+ 6.99 EUR
500+ 6.21 EUR
Mindestbestellmenge: 3
STP12NM50FP STP12NM50FP.pdf
STP12NM50FP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
24+3.02 EUR
26+ 2.77 EUR
35+ 2.09 EUR
37+ 1.97 EUR
Mindestbestellmenge: 24
STP12NM50FP STP12NM50FP.pdf
STP12NM50FP
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 7.5A; 35W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 7.5A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.02 EUR
26+ 2.77 EUR
35+ 2.09 EUR
37+ 1.97 EUR
250+ 1.94 EUR
Mindestbestellmenge: 24
STP12NM50FP en.CD00002079.pdf
Hersteller: ST
N-MOSFET 12A 500V 35W STP12NM50FP TSTP12NM50FP
Anzahl je Verpackung: 10 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+5.36 EUR
Mindestbestellmenge: 10
STP12NM50FP en.cd00002079.pdf
STP12NM50FP
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
STP12NM50FP stb12nm50t4-2956181.pdf
STP12NM50FP
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 12 Amp
auf Bestellung 767 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.69 EUR
10+ 9.78 EUR
25+ 7.62 EUR
100+ 6.71 EUR
250+ 6.68 EUR
500+ 6.06 EUR
1000+ 5.3 EUR
Mindestbestellmenge: 5
STP12NM50FP en.CD00002079.pdf
STP12NM50FP
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 895 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.61 EUR
50+ 8.41 EUR
100+ 7.21 EUR
500+ 6.41 EUR
Mindestbestellmenge: 3
STP14NM50N STF14NM50N.pdf
STP14NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
40+ 1.82 EUR
42+ 1.7 EUR
Mindestbestellmenge: 36
STP14NM50N STF14NM50N.pdf
STP14NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 90W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
36+2.03 EUR
40+ 1.82 EUR
42+ 1.7 EUR
Mindestbestellmenge: 36
STP14NM50N en.CD00257735.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 500V; 25V; 320mOhm; 12A; 90W; -55°C ~ 150°C; STP14NM50N TSTP14NM50N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.95 EUR
Mindestbestellmenge: 20
STP14NM50N 818112945102311cd00257735.pdf
STP14NM50N
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
STP14NM50N stf14nm50n-1850742.pdf
STP14NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
auf Bestellung 86 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.31 EUR
10+ 9.18 EUR
25+ 7.41 EUR
100+ 6.34 EUR
500+ 5.64 EUR
1000+ 4.73 EUR
2000+ 4.52 EUR
Mindestbestellmenge: 6
STP14NM50N en.CD00257735.pdf
STP14NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 816 pF @ 50 V
auf Bestellung 817 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.26 EUR
50+ 7.33 EUR
100+ 6.28 EUR
500+ 5.59 EUR
Mindestbestellmenge: 3
STP19NM50N STx19NM50N-DTE.pdf
STP19NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 10A; 110W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
38+1.92 EUR
42+ 1.73 EUR
47+ 1.53 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 38
STP19NM50N stf19nm50n-1850513.pdf
STP19NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power
auf Bestellung 905 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+7.57 EUR
10+ 6.84 EUR
25+ 6.14 EUR
100+ 4.94 EUR
250+ 4.81 EUR
1000+ 4.71 EUR
2000+ 4.65 EUR
Mindestbestellmenge: 7
STP19NM50N en.CD00264734.pdf
STP19NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 50 V
auf Bestellung 972 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.57 EUR
50+ 7.58 EUR
100+ 6.5 EUR
500+ 5.77 EUR
Mindestbestellmenge: 3
STP20NM50 stp20nm50.pdf
STP20NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
20+3.7 EUR
22+ 3.35 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 20
STP20NM50 stp20nm50.pdf
STP20NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 20A; 192W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 20A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 61 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.7 EUR
22+ 3.35 EUR
28+ 2.59 EUR
30+ 2.45 EUR
Mindestbestellmenge: 20
STP20NM50 7682.pdf
STP20NM50
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 2051 Stücke:
Lieferzeit 14-21 Tag (e)
STP20NM50 stb20nm50-1850251.pdf
STP20NM50
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 740 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.7 EUR
10+ 11.88 EUR
25+ 10.17 EUR
100+ 8.84 EUR
250+ 8.5 EUR
500+ 7.98 EUR
1000+ 6.81 EUR
Mindestbestellmenge: 4
STP20NM50 en.CD00002374.pdf
STP20NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
auf Bestellung 930 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+13.62 EUR
50+ 10.8 EUR
100+ 9.26 EUR
500+ 8.23 EUR
Mindestbestellmenge: 2
STP20NM50FD power-transistors.html
STP20NM50FD
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™; unipolar; 500V; 14A; Idm: 80A; 192W
Type of transistor: N-MOSFET
Technology: FDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 192W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.92 EUR
21+ 3.52 EUR
26+ 2.76 EUR
28+ 2.6 EUR
Mindestbestellmenge: 19
STP20NM50FD sgsts29971_1-2282276.pdf
STP20NM50FD
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 990 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.22 EUR
10+ 13.91 EUR
25+ 12.61 EUR
100+ 11.57 EUR
250+ 10.89 EUR
500+ 10.22 EUR
1000+ 9.2 EUR
Mindestbestellmenge: 4
STP20NM50FD power-transistors.html
STP20NM50FD
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+16.15 EUR
50+ 12.88 EUR
100+ 11.52 EUR
500+ 10.17 EUR
1000+ 9.15 EUR
Mindestbestellmenge: 2
STP23NM50N 812299290764112cd00259533.pdf
STP23NM50N
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 17A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
STP23NM50N stf23nm50n-1850567.pdf
STP23NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
auf Bestellung 921 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.25 EUR
10+ 6.76 EUR
25+ 5.95 EUR
Mindestbestellmenge: 5
STP28NM50N stp28nm50n.pdf
STP28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
Mindestbestellmenge: 18
STP28NM50N stp28nm50n.pdf
STP28NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 550V; 21A; 150W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 21A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 158mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 18 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+3.98 EUR
250+ 2.65 EUR
Mindestbestellmenge: 18
STP28NM50N stb28nm50n-1850044.pdf
STP28NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.135 21A MDmesh II
auf Bestellung 916 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.5 EUR
25+ 13.68 EUR
100+ 11.18 EUR
500+ 9.78 EUR
1000+ 8.61 EUR
2000+ 8.22 EUR
Mindestbestellmenge: 4
STP32NM50N en.DM00060101.pdf
STP32NM50N
Hersteller: STMicroelectronics
Description: MOSFET N CH 500V 22A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 11A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1973 pF @ 50 V
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+18.25 EUR
Mindestbestellmenge: 2
STP8NM50N STD8NM50N.pdf
STP8NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
73+ 0.99 EUR
82+ 0.88 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 64
STP8NM50N STD8NM50N.pdf
STP8NM50N
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 3A; 45W; TO220-3
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.79Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
73+ 0.99 EUR
82+ 0.88 EUR
94+ 0.77 EUR
99+ 0.73 EUR
Mindestbestellmenge: 64
STP8NM50N stp8nm50n.pdf
Hersteller: ST
Trans MOSFET N-CH 500V 5A STP8NM50N TSTP8NM50N
Anzahl je Verpackung: 10 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.84 EUR
Mindestbestellmenge: 20
STP8NM50N std8nm50n-1850478.pdf
STP8NM50N
Hersteller: STMicroelectronics
MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II PWR MO
auf Bestellung 885 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.98 EUR
15+ 3.48 EUR
100+ 3.07 EUR
250+ 3.04 EUR
500+ 2.4 EUR
Mindestbestellmenge: 14
STP8NM50N en.cd00271067.pdf
STP8NM50N
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
STP8NM50N stp8nm50n.pdf
STP8NM50N
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 50 V
auf Bestellung 988 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.46 EUR
50+ 4.38 EUR
100+ 3.6 EUR
500+ 3.05 EUR
Mindestbestellmenge: 5
STW19NM50N stf19nm50n-1850513.pdf
STW19NM50N
Hersteller: STMicroelectronics
MOSFET POWER MOSFET N-CH 500V 13A
auf Bestellung 476 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+16.12 EUR
10+ 13.52 EUR
25+ 10.35 EUR
100+ 9.46 EUR
250+ 8.81 EUR
600+ 8.32 EUR
1200+ 7.85 EUR
Mindestbestellmenge: 4
STW20NM50FD STW20NM50FD_Jun2002.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 500V; 500V; 30V; 250mOhm; 20A; 214W; -65°C ~ 150°C; STW20NM50FD TSTW20NM50FD
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+8.86 EUR
Mindestbestellmenge: 5
STW20NM50FD cd0000247.pdf
STW20NM50FD
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
STW20NM50FD sgsts26810_1-2282504.pdf
STW20NM50FD
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 20 Amp
auf Bestellung 1128 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+18.51 EUR
25+ 12.01 EUR
100+ 11.49 EUR
250+ 10.97 EUR
600+ 10.4 EUR
1200+ 10.04 EUR
Mindestbestellmenge: 3
STW26NM50 STW26NM50-DTE.pdf
STW26NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.9A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.99 EUR
16+ 4.72 EUR
Mindestbestellmenge: 11
STW26NM50 STW26NM50-DTE.pdf
STW26NM50
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 18.9A; 313W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18.9A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+7.14 EUR
12+ 6.42 EUR
15+ 4.99 EUR
16+ 4.72 EUR
Mindestbestellmenge: 11
STW26NM50 232701829016600cd00002680.pdf
STW26NM50
Hersteller: STMicroelectronics
Trans MOSFET N-CH 500V 30A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)
STW26NM50 stw26nm50-1851953.pdf
STW26NM50
Hersteller: STMicroelectronics
MOSFET N-Ch 500 Volt 30 Amp
auf Bestellung 555 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+26.1 EUR
10+ 25.17 EUR
25+ 18.56 EUR
50+ 18.51 EUR
100+ 17.81 EUR
250+ 16.87 EUR
600+ 16.43 EUR
Mindestbestellmenge: 2
STW26NM50 en.CD00002680.pdf
STW26NM50
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 13A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 328 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+25.92 EUR
30+ 21 EUR
120+ 19.76 EUR
Mindestbestellmenge: 2
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