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SI4800BDY-T1-E3 SI4800BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7AE4786FA469&compId=SI4800BDY-E3.pdf?ci_sign=ef227de5271d149492adc5fd67359e1457b08a4a description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1845 Stücke:
Lieferzeit 7-14 Tag (e)
95+0.76 EUR
118+0.61 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
SI4800BDY-T1-GE3 VISHAY si4800bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4804CDY-T1-GE3 VISHAY si4804cdy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Polarisation: unipolar
Drain current: 8A
Drain-source voltage: 30V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4816BDY-T1-E3 SI4816BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA992BCCC437B40C7&compId=SI4816BDY.pdf?ci_sign=8bc200295f4cfee228b5eaa8cc6e5d29270ab90a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Power dissipation: 0.64/0.8W
Case: SO8
Kind of package: reel; tape
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA992BCCC437B40C7&compId=SI4816BDY.pdf?ci_sign=8bc200295f4cfee228b5eaa8cc6e5d29270ab90a Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Power dissipation: 0.64/0.8W
Case: SO8
Kind of package: reel; tape
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4825DDY-T1-GE3 VISHAY si4825ddy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SI4835DDY-T1-E3 SI4835DDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7FA5A9380469&compId=SI4835DDY-T1-E3.pdf?ci_sign=6582884098186cc6279293267068a76a5b99aeb9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Polarisation: unipolar
Drain current: -7.7A
Drain-source voltage: -30V
Power dissipation: 3.6W
Case: SO8
Kind of package: reel; tape
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
62+1.17 EUR
107+0.67 EUR
113+0.63 EUR
5000+0.61 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
SI4835DDY-T1-GE3 SI4835DDY-T1-GE3 VISHAY si4835ddy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Polarisation: unipolar
Drain current: -7.7A
Drain-source voltage: -30V
Power dissipation: 3.6W
Case: SO8
Kind of package: reel; tape
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 584 Stücke:
Lieferzeit 7-14 Tag (e)
80+0.90 EUR
101+0.71 EUR
125+0.57 EUR
133+0.54 EUR
500+0.52 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
SI4838BDY-T1-GE3 VISHAY si4838bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 34A; Idm: 70A; 5.7W
Polarisation: unipolar
Drain current: 34A
Drain-source voltage: 12V
Power dissipation: 5.7W
Case: SO8
Kind of package: reel; tape
Gate charge: 84nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 70A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4838DY-T1-E3 VISHAY si4838dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 12V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4840BDY-T1-E3 SI4840BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DA89548B67860DE&compId=si4840bdy.pdf?ci_sign=284ed8913af3f51a5180396dcb920ddc35417f1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Polarisation: unipolar
Drain current: 9.9A
Drain-source voltage: 40V
Power dissipation: 3.8W
Case: SO8
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3027 Stücke:
Lieferzeit 7-14 Tag (e)
48+1.52 EUR
63+1.15 EUR
96+0.75 EUR
102+0.70 EUR
1000+0.68 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
SI4840BDY-T1-GE3 SI4840BDY-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DA89548B67860DE&compId=si4840bdy.pdf?ci_sign=284ed8913af3f51a5180396dcb920ddc35417f1e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Polarisation: unipolar
Drain current: 9.9A
Drain-source voltage: 40V
Power dissipation: 3.8W
Case: SO8
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4842BDY-T1-E3 VISHAY si4842bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 28A; Idm: 60A; SO8
Polarisation: unipolar
Drain current: 28A
Drain-source voltage: 30V
Power dissipation: 6.25W
Case: SO8
Kind of package: reel; tape
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4848ADY-T1-GE3 VISHAY si4848ady.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 5.5A; Idm: 20A; 5W
Polarisation: unipolar
Drain current: 5.5A
Drain-source voltage: 150V
Power dissipation: 5W
Case: SO8
Kind of package: reel; tape
Gate charge: 9.5nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 20A
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4848DY-T1-E3 SI4848DY-T1-E3 VISHAY si4848dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Polarisation: unipolar
Drain current: 3.7A
Drain-source voltage: 150V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 25A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2172 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
72+1.00 EUR
76+0.94 EUR
500+0.93 EUR
1000+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
SI4848DY-T1-GE3 VISHAY si4848dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Polarisation: unipolar
Drain current: 3.7A
Drain-source voltage: 150V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 25A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SI4850BDY-T1-GE3 VISHAY si4850bdy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Drain current: 11.3A
Drain-source voltage: 60V
Power dissipation: 4.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4850EY-E3 SI4850EY-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C85083ED3A469&compId=SI4850EY-E3.pdf?ci_sign=c7427b873f0c2aaa0d235feef8f4560d3754ed86 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 994 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
80+0.90 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
SI4850EY-T1-E3 SI4850EY-T1-E3 VISHAY 71146.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1134 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.36 EUR
40+1.81 EUR
109+0.66 EUR
116+0.62 EUR
Mindestbestellmenge: 31
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SI4850EY-T1-GE3 SI4850EY-T1-GE3 VISHAY 71146.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4862DY-T1-E3 VISHAY si4862dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 16V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Si4864DY-T1-E3 VISHAY 71449.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 20V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Si4874BDY-T1-E3 VISHAY Si4874BDY.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Polarisation: unipolar
Drain current: 16A
Drain-source voltage: 30V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4890DY-T1-E3 VISHAY si4890dy.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4894BDY-T1-E3 SI4894BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C884B12280469&compId=SI4894BDY-T1-E3.pdf?ci_sign=d8083397ddd23514ccb8c6017cdd4c6614203a39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4894BDY-T1-GE3 VISHAY si4894bd.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4896DY-T1-E3 VISHAY 71300.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4896DY-T1-GE3 VISHAY 71300.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4900DY-T1-E3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4900DY-T1-GE3 VISHAY si4900dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si4904DY-T1-E3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4904DY-T1-GE3 VISHAY si4904dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4909DY-T1-GE3 SI4909DY-T1-GE3 VISHAY si4909dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -40V
Drain current: -6.4A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si4922BDY-T1-E3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4922BDY-T1-GE3 VISHAY si4922bd.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4925BDY-T1-E3 SI4925BDY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C92E232A5C469&compId=SI4925BDY-T1-E3.pdf?ci_sign=eb641e9b7f8dcef9e6fee4fa9bb8c5c0be01552d Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4925DDY-T1-GE3 SI4925DDY-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C99448EA20469&compId=SI4925DDY-T1-GE3.pdf?ci_sign=247ad2cca8e568a9e5989b1e2e4f6f77ff7828b1 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.9A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.87 EUR
56+1.29 EUR
68+1.07 EUR
135+0.53 EUR
143+0.50 EUR
7500+0.49 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
SI4931DY-T1-E3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4931DY-T1-GE3 VISHAY si4931dy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 VISHAY si4932dy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4936BDY-T1-E3 VISHAY Si4936BDY.PDF Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.9A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4936CDY-T1-GE3 SI4936CDY-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB90B41EDABB85D37AA64F60C7&compId=si4936cdy-t1-e3.pdf?ci_sign=90fd2b1e62740aefc82a1551863ac9c65766bedb Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 30V
Drain current: 4.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 531 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
92+0.78 EUR
155+0.46 EUR
164+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SI4943BDY-T1-E3 VISHAY si4943bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4943CDY-T1-E3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4943CDY-T1-GE3 VISHAY si4943cdy.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4946BEY-T1-E3 SI4946BEY-T1-E3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F399C181EC411C&compId=SI4946BEY-DTE.pdf?ci_sign=a655ba4d38ffd184a0bcddc24a06cf6b804ecf59 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2753 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
52+1.39 EUR
104+0.69 EUR
111+0.65 EUR
5000+0.64 EUR
10000+0.62 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
SI4946BEY-T1-GE3 SI4946BEY-T1-GE3 VISHAY pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F399C181EC411C&compId=SI4946BEY-DTE.pdf?ci_sign=a655ba4d38ffd184a0bcddc24a06cf6b804ecf59 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 644 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
97+0.74 EUR
103+0.70 EUR
2500+0.67 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SI4946CDY-T1-GE3 VISHAY si4946cdy.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 51.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4948BEY-T1-E3 VISHAY si4948be.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4948BEY-T1-GE3 SI4948BEY-T1-GE3 VISHAY si4948be.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2604 Stücke:
Lieferzeit 7-14 Tag (e)
65+1.12 EUR
76+0.94 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
SI4963BDY-T1-E3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4963BDY-T1-GE3 VISHAY si4963bd.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI5403DC-T1-GE3 VISHAY si5403dc.pdf SI5403DC-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
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SI5418DU-T1-GE3 VISHAY si5418du.pdf SI5418DU-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
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SI5419DU-T1-GE3 VISHAY si5419du.pdf SI5419DU-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
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SI5424DC-T1-GE3 VISHAY si5424dc.pdf SI5424DC-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
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SI5429DU-T1-GE3 VISHAY si5429du.pdf SI5429DU.pdf SI5429DU-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
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SI5441BDC-T1-E3 VISHAY 73207.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: PowerPAK® ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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SI5441BDC-T1-GE3 VISHAY 73207.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: PowerPAK® ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
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SI5442DU-T1-GE3 VISHAY si5442du.pdf SI5442DU-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
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SI4800BDY-T1-E3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7AE4786FA469&compId=SI4800BDY-E3.pdf?ci_sign=ef227de5271d149492adc5fd67359e1457b08a4a
SI4800BDY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
95+0.76 EUR
118+0.61 EUR
194+0.37 EUR
205+0.35 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
SI4800BDY-T1-GE3 si4800bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 7A; Idm: 40A; 2.5W
Polarisation: unipolar
Drain current: 7A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 13nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4804CDY-T1-GE3 si4804cdy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Polarisation: unipolar
Drain current: 8A
Drain-source voltage: 30V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 27mΩ
Type of transistor: N-MOSFET x2
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4816BDY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA992BCCC437B40C7&compId=SI4816BDY.pdf?ci_sign=8bc200295f4cfee228b5eaa8cc6e5d29270ab90a
SI4816BDY-T1-E3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Power dissipation: 0.64/0.8W
Case: SO8
Kind of package: reel; tape
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4816BDY-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA992BCCC437B40C7&compId=SI4816BDY.pdf?ci_sign=8bc200295f4cfee228b5eaa8cc6e5d29270ab90a
SI4816BDY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2 + Schottky; LITTLE FOOT®; unipolar; 30V
Polarisation: unipolar
Drain current: 4.6/6.5A
Drain-source voltage: 30V
Power dissipation: 0.64/0.8W
Case: SO8
Kind of package: reel; tape
Features of semiconductor devices: Half-Bridge Power MOSFET
Gate charge: 10/18nC
Technology: LITTLE FOOT®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 18.5/11.5mΩ
Type of transistor: N-MOSFET x2 + Schottky
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4825DDY-T1-GE3 si4825ddy.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -14.9A; Idm: -60A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14.9A
Pulsed drain current: -60A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SI4835DDY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C7FA5A9380469&compId=SI4835DDY-T1-E3.pdf?ci_sign=6582884098186cc6279293267068a76a5b99aeb9
SI4835DDY-T1-E3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Polarisation: unipolar
Drain current: -7.7A
Drain-source voltage: -30V
Power dissipation: 3.6W
Case: SO8
Kind of package: reel; tape
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.76 EUR
62+1.17 EUR
107+0.67 EUR
113+0.63 EUR
5000+0.61 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
SI4835DDY-T1-GE3 si4835ddy.pdf
SI4835DDY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Polarisation: unipolar
Drain current: -7.7A
Drain-source voltage: -30V
Power dissipation: 3.6W
Case: SO8
Kind of package: reel; tape
Gate charge: 65nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: -50A
On-state resistance: 18mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 584 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
80+0.90 EUR
101+0.71 EUR
125+0.57 EUR
133+0.54 EUR
500+0.52 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
SI4838BDY-T1-GE3 si4838bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 34A; Idm: 70A; 5.7W
Polarisation: unipolar
Drain current: 34A
Drain-source voltage: 12V
Power dissipation: 5.7W
Case: SO8
Kind of package: reel; tape
Gate charge: 84nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 70A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4838DY-T1-E3 si4838dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 12V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 60nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4840BDY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DA89548B67860DE&compId=si4840bdy.pdf?ci_sign=284ed8913af3f51a5180396dcb920ddc35417f1e
SI4840BDY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Polarisation: unipolar
Drain current: 9.9A
Drain-source voltage: 40V
Power dissipation: 3.8W
Case: SO8
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3027 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
48+1.52 EUR
63+1.15 EUR
96+0.75 EUR
102+0.70 EUR
1000+0.68 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
SI4840BDY-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB281E1FD08DA89548B67860DE&compId=si4840bdy.pdf?ci_sign=284ed8913af3f51a5180396dcb920ddc35417f1e
SI4840BDY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 9.9A; Idm: 50A
Polarisation: unipolar
Drain current: 9.9A
Drain-source voltage: 40V
Power dissipation: 3.8W
Case: SO8
Kind of package: reel; tape
Gate charge: 50nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4842BDY-T1-E3 si4842bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 28A; Idm: 60A; SO8
Polarisation: unipolar
Drain current: 28A
Drain-source voltage: 30V
Power dissipation: 6.25W
Case: SO8
Kind of package: reel; tape
Gate charge: 0.1µC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 60A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4848ADY-T1-GE3 si4848ady.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 5.5A; Idm: 20A; 5W
Polarisation: unipolar
Drain current: 5.5A
Drain-source voltage: 150V
Power dissipation: 5W
Case: SO8
Kind of package: reel; tape
Gate charge: 9.5nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 20A
On-state resistance: 0.133Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4848DY-T1-E3 si4848dy.pdf
SI4848DY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Polarisation: unipolar
Drain current: 3.7A
Drain-source voltage: 150V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 25A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2172 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.43 EUR
72+1.00 EUR
76+0.94 EUR
500+0.93 EUR
1000+0.92 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
SI4848DY-T1-GE3 si4848dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 3.7A; Idm: 25A; 3W
Polarisation: unipolar
Drain current: 3.7A
Drain-source voltage: 150V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 21nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 25A
On-state resistance: 95mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SI4850BDY-T1-GE3 si4850bdy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 11.3A; Idm: 40A
Polarisation: unipolar
Drain current: 11.3A
Drain-source voltage: 60V
Power dissipation: 4.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4850EY-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C85083ED3A469&compId=SI4850EY-E3.pdf?ci_sign=c7427b873f0c2aaa0d235feef8f4560d3754ed86
SI4850EY-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 1.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 994 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
70+1.03 EUR
80+0.90 EUR
106+0.68 EUR
112+0.64 EUR
Mindestbestellmenge: 70
Im Einkaufswagen  Stück im Wert von  UAH
SI4850EY-T1-E3 71146.pdf
SI4850EY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1134 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.36 EUR
40+1.81 EUR
109+0.66 EUR
116+0.62 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SI4850EY-T1-GE3 71146.pdf
SI4850EY-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 6A; Idm: 40A; 1.2W
Polarisation: unipolar
Drain current: 6A
Drain-source voltage: 60V
Power dissipation: 1.2W
Case: SO8
Kind of package: reel; tape
Gate charge: 27nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4862DY-T1-E3 si4862dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 16V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 5.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Si4864DY-T1-E3 71449.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 25A; Idm: 60A; 3.5W
Polarisation: unipolar
Drain current: 25A
Drain-source voltage: 20V
Power dissipation: 3.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 70nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±8V
Pulsed drain current: 60A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Si4874BDY-T1-E3 Si4874BDY.PDF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W
Polarisation: unipolar
Drain current: 16A
Drain-source voltage: 30V
Power dissipation: 3W
Case: SO8
Kind of package: reel; tape
Gate charge: 25nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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SI4890DY-T1-E3 si4890dy.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 11A; Idm: 50A; 2.5W
Polarisation: unipolar
Drain current: 11A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 20nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±25V
Pulsed drain current: 50A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4894BDY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C884B12280469&compId=SI4894BDY-T1-E3.pdf?ci_sign=d8083397ddd23514ccb8c6017cdd4c6614203a39
SI4894BDY-T1-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4894BDY-T1-GE3 si4894bd.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 9.5A; Idm: 40A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 30V
Power dissipation: 2.5W
Case: SO8
Kind of package: reel; tape
Gate charge: 38nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 40A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4896DY-T1-E3 71300.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4896DY-T1-GE3 71300.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 9.5A; Idm: 50A
Polarisation: unipolar
Drain current: 9.5A
Drain-source voltage: 80V
Power dissipation: 3.1W
Case: SO8
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhancement
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 50A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4900DY-T1-E3 si4900dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4900DY-T1-GE3 si4900dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 5.3A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 72mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Si4904DY-T1-E3 si4904dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4904DY-T1-GE3 si4904dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 8A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 85nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4909DY-T1-GE3 si4909dy.pdf
SI4909DY-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.4A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -40V
Drain current: -6.4A
On-state resistance: 27mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
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Si4922BDY-T1-E3 si4922bd.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4922BDY-T1-GE3 si4922bd.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 35A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 24mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4925BDY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C92E232A5C469&compId=SI4925BDY-T1-E3.pdf?ci_sign=eb641e9b7f8dcef9e6fee4fa9bb8c5c0be01552d
SI4925BDY-T1-E3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.7A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4925DDY-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8C99448EA20469&compId=SI4925DDY-T1-GE3.pdf?ci_sign=247ad2cca8e568a9e5989b1e2e4f6f77ff7828b1
SI4925DDY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.9A; 5W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: -30V
Drain current: -5.9A
On-state resistance: 41mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 50nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
39+1.87 EUR
56+1.29 EUR
68+1.07 EUR
135+0.53 EUR
143+0.50 EUR
7500+0.49 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
SI4931DY-T1-E3 si4931dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4931DY-T1-GE3 si4931dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -12V; -8.9A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -12V
Drain current: -8.9A
On-state resistance: 28mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 52nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4932DY-T1-GE3 si4932dy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 8A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 48nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4936BDY-T1-E3 Si4936BDY.PDF
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.9A; Idm: 30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 30V
Drain current: 6.9A
On-state resistance: 51mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 15nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4936CDY-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDABB85D37AA64F60C7&compId=si4936cdy-t1-e3.pdf?ci_sign=90fd2b1e62740aefc82a1551863ac9c65766bedb
SI4936CDY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.6A; Idm: 20A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 20A
Case: SO8
Drain-source voltage: 30V
Drain current: 4.6A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 9nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 531 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.22 EUR
92+0.78 EUR
155+0.46 EUR
164+0.44 EUR
500+0.42 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SI4943BDY-T1-E3 si4943bd.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8.4A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8.4A
On-state resistance: 31mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4943CDY-T1-E3 si4943cdy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4943CDY-T1-GE3 si4943cdy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -8A; Idm: -30A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -30A
Case: SO8
Drain-source voltage: -20V
Drain current: -8A
On-state resistance: 33mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 62nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4946BEY-T1-E3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F399C181EC411C&compId=SI4946BEY-DTE.pdf?ci_sign=a655ba4d38ffd184a0bcddc24a06cf6b804ecf59
SI4946BEY-T1-E3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2753 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
43+1.69 EUR
52+1.39 EUR
104+0.69 EUR
111+0.65 EUR
5000+0.64 EUR
10000+0.62 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
SI4946BEY-T1-GE3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F399C181EC411C&compId=SI4946BEY-DTE.pdf?ci_sign=a655ba4d38ffd184a0bcddc24a06cf6b804ecf59
SI4946BEY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 4.4A; 3.7W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 60V
Drain current: 4.4A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 3.7W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 25nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 644 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.14 EUR
97+0.74 EUR
103+0.70 EUR
2500+0.67 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
SI4946CDY-T1-GE3 si4946cdy.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 25A
Case: SO8
Drain-source voltage: 60V
Drain current: 6.1A
On-state resistance: 51.6mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 2.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4948BEY-T1-E3 si4948be.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4948BEY-T1-GE3 si4948be.pdf
SI4948BEY-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -2.4A; 0.95W
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -25A
Case: SO8
Drain-source voltage: -60V
Drain current: -2.4A
On-state resistance: 0.15Ω
Type of transistor: P-MOSFET x2
Power dissipation: 0.95W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 22nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2604 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
65+1.12 EUR
76+0.94 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
SI4963BDY-T1-E3 si4963bd.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4963BDY-T1-GE3 si4963bd.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -6.5A; 2W; SO8
Mounting: SMD
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: -40A
Case: SO8
Drain-source voltage: -20V
Drain current: -6.5A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21nC
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5403DC-T1-GE3 si5403dc.pdf
Hersteller: VISHAY
SI5403DC-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5418DU-T1-GE3 si5418du.pdf
Hersteller: VISHAY
SI5418DU-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5419DU-T1-GE3 si5419du.pdf
Hersteller: VISHAY
SI5419DU-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5424DC-T1-GE3 si5424dc.pdf
Hersteller: VISHAY
SI5424DC-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
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SI5429DU-T1-GE3 si5429du.pdf SI5429DU.pdf
Hersteller: VISHAY
SI5429DU-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5441BDC-T1-E3 73207.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: PowerPAK® ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5441BDC-T1-GE3 73207.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.1A; Idm: -20A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.1A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: PowerPAK® ChipFET
Gate-source voltage: ±12V
On-state resistance: 80mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 22nC
Technology: TrenchFET®
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI5442DU-T1-GE3 si5442du.pdf
Hersteller: VISHAY
SI5442DU-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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