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AZV3002S-13 AZV3002S-13 Diodes Incorporated AZV3001.pdf Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AZV3002RL-7 AZV3002RL-7 Diodes Incorporated AZV3001.pdf Description: IC COMPAR 2 GEN PUR U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
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AZV3002S-13 AZV3002S-13 Diodes Incorporated AZV3001.pdf Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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ZXTR2112FQ-7 ZXTR2112FQ-7 Diodes Incorporated ZXTR2112FQ.pdf Description: IC REG LINEAR 12V 15MA SOT23-3
Part Status: Active
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
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AP9234LA-AO-HSB-7 AP9234LA-AO-HSB-7 Diodes Incorporated AP9234L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
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DDZX5V1BQ-7 DDZX5V1BQ-7 Diodes Incorporated DDZX5V1BQ.pdf Description: DIODE ZENER 5.1V 300MW SOT23
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DMP3008SFGQ-7 DMP3008SFGQ-7 Diodes Incorporated DMP3008SFGQ.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
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DMP3008SFGQ-13 DMP3008SFGQ-13 Diodes Incorporated DMP3008SFGQ.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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AZ1117IH-ADJTRG1 AZ1117IH-ADJTRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117IH-3.3TRG1 AZ1117IH-3.3TRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117IH-5.0TRG1 AZ1117IH-5.0TRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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ZXTR2112FQ-7 ZXTR2112FQ-7 Diodes Incorporated ZXTR2112FQ.pdf Description: IC REG LINEAR 12V 15MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 12V
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AP9234LA-AO-HSB-7 AP9234LA-AO-HSB-7 Diodes Incorporated AP9234L.pdf Description: IC BATT PROT LI-ION 1CELL 6UDFN
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DDZX5V1BQ-7 DDZX5V1BQ-7 Diodes Incorporated DDZX5V1BQ.pdf Description: DIODE ZENER 5.1V 300MW SOT23
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DMP3008SFGQ-7 DMP3008SFGQ-7 Diodes Incorporated DMP3008SFGQ.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
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AZ1117IH-ADJTRG1 AZ1117IH-ADJTRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117IH-3.3TRG1 AZ1117IH-3.3TRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AZ1117IH-5.0TRG1 AZ1117IH-5.0TRG1 Diodes Incorporated AZ1117I.pdf Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
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AH5775-P-B AH5775-P-B Diodes Incorporated AH5775.pdf Description: IC MOTOR DRIVER 2.5V-18V TO94
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TO-94
Voltage - Load: 2.5V ~ 18V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2.5V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 4-SSIP
Packaging: Bulk
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DMC2450UV-7 DMC2450UV-7 Diodes Incorporated DMC2450UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DML1005LDS-7 DML1005LDS-7 Diodes Incorporated DML1005LDS.pdf Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Supplier Device Package: V-DFN3030-8 (Type R)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Load: 0.8V ~ 4V
Rds On (Typ): 3.8mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMN63D8L-7 DMN63D8L-7 Diodes Incorporated DMN63D8L.pdf Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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DMNH10H028SK3-13 DMNH10H028SK3-13 Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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DMNH4006SK3-13 DMNH4006SK3-13 Diodes Incorporated DMNH4006SK3.pdf Description: MOSFET N-CH 40V 18A/90A TO252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
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DMP10H4D2S-7 DMP10H4D2S-7 Diodes Incorporated DMP10H4D2S.pdf Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
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DMP510DL-7 DMP510DL-7 Diodes Incorporated DMP510DL.pdf Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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6000+0.088 EUR
9000+0.086 EUR
30000+0.083 EUR
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DMT10H015LPS-13 DMT10H015LPS-13 Diodes Incorporated DMT10H015LPS.pdf Description: MOSFET N-CH 100V 7.3A PWRDI5060
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
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DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
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DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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D14V0S1U2WS-7 D14V0S1U2WS-7 Diodes Incorporated D14V0S1U2WS.pdf Description: TVS DIODE 14VWM 26VC SOD323
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 14.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 360pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1300W (1.3kW)
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DMC2450UV-7 DMC2450UV-7 Diodes Incorporated DMC2450UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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37+0.57 EUR
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500+0.27 EUR
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DMN63D8L-7 DMN63D8L-7 Diodes Incorporated DMN63D8L.pdf Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
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139+0.15 EUR
500+0.11 EUR
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DMNH10H028SK3-13 DMNH10H028SK3-13 Diodes Incorporated DMNH10H028SK3.pdf Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
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DMNH4006SK3-13 DMNH4006SK3-13 Diodes Incorporated DMNH4006SK3.pdf Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
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DMP10H4D2S-7 DMP10H4D2S-7 Diodes Incorporated DMP10H4D2S.pdf Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
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500+0.2 EUR
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DMP510DL-7 DMP510DL-7 Diodes Incorporated DMP510DL.pdf Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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60+0.36 EUR
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500+0.15 EUR
1000+0.14 EUR
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DMT10H015LPS-13 DMT10H015LPS-13 Diodes Incorporated DMT10H015LPS.pdf Description: MOSFET N-CH 100V 7.3A PWRDI5060
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
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DMT10H015LSS-13 DMT10H015LSS-13 Diodes Incorporated DMT10H015LSS.pdf Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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DMT6004LPS-13 DMT6004LPS-13 Diodes Incorporated DMT6004LPS.pdf Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
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DMTH6010LK3-13 DMTH6010LK3-13 Diodes Incorporated DMTH6010LK3.pdf Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
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500+1.05 EUR
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7 SBR5E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR8E45P5-7 SBR8E45P5-7 Diodes Incorporated SBR5E45P5.pdf Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
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DMTH6010LPS-13 DMTH6010LPS-13 Diodes Incorporated DMTH6010LPS.pdf Description: MOSFET N-CH 60V 13.5A
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SBR5E45P5-13 SBR5E45P5-13 Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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SBR5E45P5-7D SBR5E45P5-7D Diodes Incorporated SBR5E45P5.pdf Description: DIODE RECT SBR 45V 5A POWERDI5
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AL5801EV1 Diodes Incorporated AL5801.pdf Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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AL5802EV1 AL5802EV1 Diodes Incorporated AL5802.pdf Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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AL8400EV1 Diodes Incorporated AL8400EV1-User-Guide-Issue-1.pdf Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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AL8805EV1 Diodes Incorporated al8805ev1_20user_20guide_20issue_203.pdf Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AL8805EV2 Diodes Incorporated al8805ev2_20user_20guide_20issue_201.pdf Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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AZV3002S-13 AZV3001.pdf
AZV3002S-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+0.33 EUR
5000+0.32 EUR
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AZV3002RL-7 AZV3001.pdf
AZV3002RL-7
Hersteller: Diodes Incorporated
Description: IC COMPAR 2 GEN PUR U-FLGA1616-8
Packaging: Cut Tape (CT)
Package / Case: 8-UFLGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Supplier Device Package: U-FLGA1616-8
Propagation Delay (Max): 0.8µs
Current - Quiescent (Max): 6µA (Typ)
Voltage - Input Offset (Max): 30mV
Current - Input Bias (Max): 1pA
Current - Output (Typ): 68mA
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Hysteresis: 13mV
Part Status: Active
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AZV3002S-13 AZV3001.pdf
AZV3002S-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 GEN PUR 8SO
Hysteresis: 13mV
CMRR, PSRR (Typ): 70dB CMRR, 80dB PSRR
Current - Output (Typ): 68mA
Current - Input Bias (Max): 1pA
Voltage - Input Offset (Max): 30mV
Current - Quiescent (Max): 9µA (Typ)
Propagation Delay (Max): 0.8µs
Supplier Device Package: 8-SO
Voltage - Supply, Single/Dual (±): 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Standard (General Purpose)
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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28+0.75 EUR
40+0.54 EUR
45+0.48 EUR
100+0.42 EUR
250+0.38 EUR
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1000+0.35 EUR
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ZXTR2112FQ-7 ZXTR2112FQ.pdf
ZXTR2112FQ-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Part Status: Active
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
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3000+0.31 EUR
6000+0.3 EUR
21000+0.29 EUR
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AP9234LA-AO-HSB-7 AP9234L.pdf
AP9234LA-AO-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
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DDZX5V1BQ-7 DDZX5V1BQ.pdf
DDZX5V1BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
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3000+0.13 EUR
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DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
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2000+0.94 EUR
4000+0.93 EUR
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DMP3008SFGQ-13 DMP3008SFGQ.pdf
DMP3008SFGQ-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.95 EUR
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AZ1117IH-ADJTRG1 AZ1117I.pdf
AZ1117IH-ADJTRG1
Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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AZ1117IH-3.3TRG1 AZ1117I.pdf
AZ1117IH-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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AZ1117IH-5.0TRG1 AZ1117I.pdf
AZ1117IH-5.0TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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ZXTR2112FQ-7 ZXTR2112FQ.pdf
ZXTR2112FQ-7
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 12V 15MA SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-23-3
Number of Regulators: 1
Voltage - Input (Max): 60V
Current - Quiescent (Iq): 360 µA
Output Configuration: Positive
Operating Temperature: -65°C ~ 150°C
Current - Output: 15mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Supply (Max): 6 mA
PSRR: 50dB (100Hz)
Part Status: Active
Voltage - Output (Min/Fixed): 12V
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29+0.74 EUR
42+0.5 EUR
47+0.45 EUR
100+0.39 EUR
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AP9234LA-AO-HSB-7 AP9234L.pdf
AP9234LA-AO-HSB-7
Hersteller: Diodes Incorporated
Description: IC BATT PROT LI-ION 1CELL 6UDFN
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DDZX5V1BQ-7 DDZX5V1BQ.pdf
DDZX5V1BQ-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 5.1V 300MW SOT23
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29+0.74 EUR
36+0.58 EUR
100+0.31 EUR
500+0.2 EUR
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DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 50514 Stücke:
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8+2.92 EUR
11+2.05 EUR
100+1.51 EUR
500+1.19 EUR
1000+1.09 EUR
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AZ1117IH-ADJTRG1 AZ1117I.pdf
AZ1117IH-ADJTRG1
Hersteller: Diodes Incorporated
Description: IC REG LIN POS ADJ 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Max): 13.7V
Voltage - Output (Min/Fixed): 1.25V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 3767 Stücke:
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AnzahlPrivatkunde
44+0.48 EUR
63+0.33 EUR
72+0.3 EUR
100+0.25 EUR
250+0.23 EUR
500+0.21 EUR
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AZ1117IH-3.3TRG1 AZ1117I.pdf
AZ1117IH-3.3TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 3.3V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
Produkt ist nicht verfügbar
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AZ1117IH-5.0TRG1 AZ1117I.pdf
AZ1117IH-5.0TRG1
Hersteller: Diodes Incorporated
Description: IC REG LINEAR 5V 1A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: SOT-223-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 1.3V @ 800mA
Protection Features: Thermal Shutdown
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
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48+0.44 EUR
69+0.31 EUR
78+0.27 EUR
100+0.23 EUR
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AH5775-P-B AH5775.pdf
AH5775-P-B
Hersteller: Diodes Incorporated
Description: IC MOTOR DRIVER 2.5V-18V TO94
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: TO-94
Voltage - Load: 2.5V ~ 18V
Technology: Power MOSFET
Applications: Fan Motor Driver
Voltage - Supply: 2.5V ~ 18V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off
Current - Output: 300mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 4-SSIP
Packaging: Bulk
Produkt ist nicht verfügbar
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DMC2450UV-7 DMC2450UV.pdf
DMC2450UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
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DML1005LDS-7 DML1005LDS.pdf
DML1005LDS-7
Hersteller: Diodes Incorporated
Description: IC PWR SWITCH N-CHAN 1:1 8VDFN
Supplier Device Package: V-DFN3030-8 (Type R)
Ratio - Input:Output: 1:1
Current - Output (Max): 10A
Voltage - Load: 0.8V ~ 4V
Rds On (Typ): 3.8mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN63D8L-7 DMN63D8L.pdf
DMN63D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Produkt ist nicht verfügbar
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DMNH10H028SK3-13 DMNH10H028SK3.pdf
DMNH10H028SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.08 EUR
5000+1.04 EUR
12500+1.01 EUR
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DMNH4006SK3-13 DMNH4006SK3.pdf
DMNH4006SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
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2500+1.48 EUR
5000+1.42 EUR
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DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.14 EUR
6000+0.13 EUR
9000+0.12 EUR
15000+0.11 EUR
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DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.098 EUR
6000+0.088 EUR
9000+0.086 EUR
30000+0.083 EUR
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DMT10H015LPS-13 DMT10H015LPS.pdf
DMT10H015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.81 EUR
5000+0.8 EUR
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DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 57500 Stücke:
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AnzahlPrivatkunde
2500+0.84 EUR
5000+0.79 EUR
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DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.48 EUR
5000+1.38 EUR
7500+1.33 EUR
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DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.83 EUR
5000+0.79 EUR
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2500 Stücke
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SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1500 Stücke
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SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.38 EUR
3000+0.37 EUR
4500+0.36 EUR
7500+0.35 EUR
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D14V0S1U2WS-7 D14V0S1U2WS.pdf
D14V0S1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 26VC SOD323
Voltage - Clamping (Max) @ Ipp: 26V
Voltage - Breakdown (Min): 14.5V
Unidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 14V (Max)
Current - Peak Pulse (10/1000µs): 50A (8/20µs)
Capacitance @ Frequency: 360pF @ 1MHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 1300W (1.3kW)
auf Bestellung 9552 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
52+0.4 EUR
106+0.2 EUR
1000+0.19 EUR
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DMC2450UV-7 DMC2450UV.pdf
DMC2450UV-7
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
23+0.92 EUR
37+0.57 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
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DMN63D8L-7 DMN63D8L.pdf
DMN63D8L-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 350MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
auf Bestellung 1107 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
53+0.39 EUR
87+0.24 EUR
139+0.15 EUR
500+0.11 EUR
1000+0.098 EUR
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DMNH10H028SK3-13 DMNH10H028SK3.pdf
DMNH10H028SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 55A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
auf Bestellung 195000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.88 EUR
Mindestbestellmenge: 6 Stücke
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DMNH4006SK3-13 DMNH4006SK3.pdf
DMNH4006SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 18A/90A TO252
Rds On (Max) @ Id, Vgs: 6mOhm @ 86A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.2W (Ta)
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
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DMP10H4D2S-7 DMP10H4D2S.pdf
DMP10H4D2S-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 270MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 500mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 87 pF @ 25 V
auf Bestellung 17889 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
50+0.42 EUR
100+0.26 EUR
500+0.2 EUR
1000+0.18 EUR
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DMP510DL-7 DMP510DL.pdf
DMP510DL-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 50V 180MA SOT23
Input Capacitance (Ciss) (Max) @ Vds: 24.6 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 310mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 5V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 37118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
60+0.36 EUR
113+0.19 EUR
500+0.15 EUR
1000+0.14 EUR
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DMT10H015LPS-13 DMT10H015LPS.pdf
DMT10H015LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 7.3A PWRDI5060
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI5060-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 46W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
auf Bestellung 108220 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.43 EUR
13+1.71 EUR
100+1.21 EUR
500+1.02 EUR
1000+0.96 EUR
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DMT10H015LSS-13 DMT10H015LSS.pdf
DMT10H015LSS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 8.3A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 58894 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.96 EUR
100+1.29 EUR
500+1.04 EUR
1000+0.94 EUR
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DMT6004LPS-13 DMT6004LPS.pdf
DMT6004LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 2.1W (Ta), 105W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4515 pF @ 30 V
auf Bestellung 13522 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
10+3.21 EUR
100+2.2 EUR
500+1.76 EUR
1000+1.64 EUR
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DMTH6010LK3-13 DMTH6010LK3.pdf
DMTH6010LK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 14.8A/70A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
auf Bestellung 112494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.13 EUR
11+1.99 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
Mindestbestellmenge: 7 Stücke
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
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SBR8E45P5-7 SBR5E45P5.pdf
SBR8E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 45V 8A POWERDI5
Current - Reverse Leakage @ Vr: 350 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 45 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 8A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Cut Tape (CT)
auf Bestellung 13400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.3 EUR
25+0.86 EUR
100+0.68 EUR
500+0.51 EUR
Mindestbestellmenge: 17 Stücke
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DMTH6010LPS-13 DMTH6010LPS.pdf
DMTH6010LPS-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-13 SBR5E45P5.pdf
SBR5E45P5-13
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 4294967295 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7 SBR5E45P5.pdf
SBR5E45P5-7
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15004500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SBR5E45P5-7D SBR5E45P5.pdf
SBR5E45P5-7D
Hersteller: Diodes Incorporated
Description: DIODE RECT SBR 45V 5A POWERDI5
auf Bestellung 15006000 Stücke:
Lieferzeit 10-14 Tag (e)
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AL5801EV1 AL5801.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5801
Packaging: Box
Voltage - Input: 3.5V ~ 20V
Current - Output / Channel: 350mA
Utilized IC / Part: AL5801
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
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AL5802EV1 AL5802.pdf
AL5802EV1
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL5802
Packaging: Box
Voltage - Input: 4.5V ~ 30V
Contents: Board(s)
Current - Output / Channel: 120mA
Utilized IC / Part: AL5802
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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AL8400EV1 AL8400EV1-User-Guide-Issue-1.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8400
Packaging: Box
Voltage - Input: 4V ~ 18V
Current - Output / Channel: 150mA
Utilized IC / Part: AL8400
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Produkt ist nicht verfügbar
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AL8805EV1 al8805ev1_20user_20guide_20issue_203.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Features: Dimmable
Packaging: Box
Voltage - Input: 6V ~ 30V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AL8805EV2 al8805ev2_20user_20guide_20issue_201.pdf
Hersteller: Diodes Incorporated
Description: EVAL BOARD FOR AL8805
Packaging: Box
Voltage - Input: 12VAC, 12V ~ 20V
Contents: Board(s)
Current - Output / Channel: 680mA
Utilized IC / Part: AL8805
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Produkt ist nicht verfügbar
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