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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES IPB65R110CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BTS70041EPPXUMA1 BTS70041EPPXUMA1 INFINEON TECHNOLOGIES BTS70041EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Turn-off time: 220µs
Turn-on time: 210µs
auf Bestellung 2742 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.81 EUR
41+2.07 EUR
44+1.94 EUR
Mindestbestellmenge: 31 Stücke
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES BTS5090-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.28 EUR
40+2.13 EUR
46+1.89 EUR
100+1.58 EUR
250+1.43 EUR
500+1.31 EUR
1000+1.27 EUR
Mindestbestellmenge: 26 Stücke
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES BTS3050EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2794 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.81 EUR
53+1.62 EUR
64+1.34 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 48 Stücke
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BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES BTS5012SDA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
Technology: High Current PROFET
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
33+2.58 EUR
Mindestbestellmenge: 26 Stücke
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.25 EUR
42+2.06 EUR
45+1.93 EUR
50+1.71 EUR
100+1.5 EUR
250+1.38 EUR
500+1.27 EUR
1000+1.24 EUR
Mindestbestellmenge: 38 Stücke
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
47+1.83 EUR
55+1.55 EUR
100+1.39 EUR
250+1.3 EUR
500+1.23 EUR
1000+1.11 EUR
Mindestbestellmenge: 42 Stücke
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES BSC010N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES BSC010N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
149+0.57 EUR
Mindestbestellmenge: 148 Stücke
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES SN7002NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
321+0.26 EUR
522+0.17 EUR
625+0.13 EUR
Mindestbestellmenge: 209 Stücke
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Mounting: THT
Power dissipation: 278W
Gate charge: 141nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
8+11.3 EUR
9+10.41 EUR
10+9.73 EUR
Mindestbestellmenge: 8 Stücke
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 121nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
7+12.2 EUR
8+11.45 EUR
9+9.92 EUR
11+8.5 EUR
20+8.31 EUR
Mindestbestellmenge: 7 Stücke
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 245W
Gate charge: 136nC
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of package: tube
Case: TO247-3
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327 INFINEON TECHNOLOGIES BCV46E6327.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 5706 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
336+0.25 EUR
455+0.19 EUR
512+0.17 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 250 Stücke
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BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
 BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.51 EUR
Mindestbestellmenge: 10 Stücke
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BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
248+0.35 EUR
334+0.25 EUR
379+0.23 EUR
500+0.2 EUR
Mindestbestellmenge: 148 Stücke
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
253+0.33 EUR
285+0.3 EUR
439+0.19 EUR
527+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 200 Stücke
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
906+0.094 EUR
1104+0.077 EUR
1115+0.076 EUR
Mindestbestellmenge: 625 Stücke
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10642 Stücke:
Lieferzeit 14-21 Tag (e)
947+0.09 EUR
1055+0.081 EUR
1194+0.071 EUR
1378+0.062 EUR
3000+0.061 EUR
Mindestbestellmenge: 947 Stücke
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BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+21.28 EUR
Mindestbestellmenge: 4 Stücke
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BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES BCR158.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
845+0.1 EUR
973+0.088 EUR
1035+0.082 EUR
Mindestbestellmenge: 845 Stücke
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BCX70HE6327 BCX70HE6327 INFINEON TECHNOLOGIES BCX70.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
993+0.086 EUR
1025+0.083 EUR
Mindestbestellmenge: 993 Stücke
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.14 EUR
1585+0.054 EUR
1765+0.049 EUR
1995+0.043 EUR
Mindestbestellmenge: 600 Stücke
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES BCR503.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
218+0.39 EUR
250+0.35 EUR
459+0.19 EUR
589+0.14 EUR
685+0.12 EUR
1000+0.11 EUR
1300+0.11 EUR
Mindestbestellmenge: 179 Stücke
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES BC847SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
544+0.15 EUR
715+0.12 EUR
807+0.11 EUR
944+0.09 EUR
Mindestbestellmenge: 313 Stücke
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BCX71GE6327 BCX71GE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
977+0.087 EUR
1085+0.079 EUR
1226+0.069 EUR
1413+0.061 EUR
Mindestbestellmenge: 977 Stücke
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BCW67CE6327 BCW67CE6327 INFINEON TECHNOLOGIES BCW67B.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.77 EUR
Mindestbestellmenge: 48 Stücke
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FM24V05-GTR FM24V05-GTR INFINEON TECHNOLOGIES FM24V05-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24V05-G FM24V05-G INFINEON TECHNOLOGIES FM24V05-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24VN10-GTR FM24VN10-GTR INFINEON TECHNOLOGIES FM24VN10-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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FM24W256-GTR FM24W256-GTR INFINEON TECHNOLOGIES FM24W256-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES BCX42E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 125V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 150MHz
auf Bestellung 881 Stücke:
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290+0.3 EUR
468+0.18 EUR
562+0.15 EUR
650+0.13 EUR
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IAUC100N08S5N031ATMA1 IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
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IAUC100N08S5N034ATMA1 IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
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IAUC100N08S5N043ATMA1 IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
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IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES irfr120n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.36 EUR
104+0.82 EUR
115+0.74 EUR
125+0.68 EUR
131+0.65 EUR
150+0.64 EUR
Mindestbestellmenge: 63 Stücke
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CY15B104Q-LHXIT CY15B104Q-LHXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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CY15B104Q-SXIT CY15B104Q-SXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM1808B-SGTR FM1808B-SGTR INFINEON TECHNOLOGIES FM1808B-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
232+0.37 EUR
255+0.35 EUR
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IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES IRFP4868PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Power dissipation: 517W
Gate charge: 180nC
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFP4868PBFAKMA1 IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
13+6.97 EUR
14+6.44 EUR
16+5.51 EUR
25+4.82 EUR
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IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES irfb4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1074 Stücke:
Lieferzeit 14-21 Tag (e)
20+4.43 EUR
26+3.3 EUR
32+2.68 EUR
35+2.46 EUR
50+2.25 EUR
100+2.07 EUR
200+1.93 EUR
500+1.81 EUR
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IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Kind of package: tube
Drain current: 316A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO247AC
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES IPB017N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES IPB017N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CY62177EV30LL-55BAXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV30LL-55ZXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 210 Stücke
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CY62146ELL-45ZSXI CY62146ELL-45ZSXI INFINEON TECHNOLOGIES CY62146ELL-45ZSXI.PDF Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
auf Bestellung 91 Stücke:
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5+21.13 EUR
Mindestbestellmenge: 5 Stücke
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CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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IPB65R110CFDATMA1 IPB65R110CFD-DTE.pdf
IPB65R110CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BTS70041EPPXUMA1 BTS70041EPP.pdf
BTS70041EPPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Turn-off time: 220µs
Turn-on time: 210µs
auf Bestellung 2742 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
31+2.81 EUR
41+2.07 EUR
44+1.94 EUR
Mindestbestellmenge: 31 Stücke
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BTS5090-1EJA BTS5090-1EJA.pdf
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.28 EUR
40+2.13 EUR
46+1.89 EUR
100+1.58 EUR
250+1.43 EUR
500+1.31 EUR
1000+1.27 EUR
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BTS3050EJ BTS3050EJ.pdf
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 0.1Ω
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2794 Stücke:
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48+1.81 EUR
53+1.62 EUR
64+1.34 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+0.98 EUR
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BTS5012SDA BTS5012SDA.pdf
BTS5012SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
Technology: High Current PROFET
auf Bestellung 958 Stücke:
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26+3.33 EUR
33+2.58 EUR
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BTS3035TF BTS3035TF.pdf
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1065 Stücke:
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38+2.25 EUR
42+2.06 EUR
45+1.93 EUR
50+1.71 EUR
100+1.5 EUR
250+1.38 EUR
500+1.27 EUR
1000+1.24 EUR
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BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
42+2.06 EUR
47+1.83 EUR
55+1.55 EUR
100+1.39 EUR
250+1.3 EUR
500+1.23 EUR
1000+1.11 EUR
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BSC010N04LSATMA1 BSC010N04LS-DTE.pdf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSI-DTE.pdf
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
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148+0.58 EUR
149+0.57 EUR
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SN7002NH6327XTSA2 SN7002NH6327XTSA2.pdf
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 625 Stücke:
Lieferzeit 14-21 Tag (e)
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209+0.4 EUR
321+0.26 EUR
522+0.17 EUR
625+0.13 EUR
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IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Mounting: THT
Power dissipation: 278W
Gate charge: 141nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
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8+11.3 EUR
9+10.41 EUR
10+9.73 EUR
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IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 121nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
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7+12.2 EUR
8+11.45 EUR
9+9.92 EUR
11+8.5 EUR
20+8.31 EUR
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IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 245W
Gate charge: 136nC
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of package: tube
Case: TO247-3
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327.pdf
BCV46E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 5706 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+0.35 EUR
336+0.25 EUR
455+0.19 EUR
512+0.17 EUR
1000+0.13 EUR
3000+0.12 EUR
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BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 10 Stücke:
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10+8.51 EUR
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BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
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148+0.58 EUR
248+0.35 EUR
334+0.25 EUR
379+0.23 EUR
500+0.2 EUR
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BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 6000 Stücke:
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200+0.43 EUR
253+0.33 EUR
285+0.3 EUR
439+0.19 EUR
527+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
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BCR185E6327 BCR185.pdf
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1115 Stücke:
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625+0.13 EUR
906+0.094 EUR
1104+0.077 EUR
1115+0.076 EUR
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BCX71KE6327 BCX71.pdf
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10642 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
947+0.09 EUR
1055+0.081 EUR
1194+0.071 EUR
1378+0.062 EUR
3000+0.061 EUR
Mindestbestellmenge: 947 Stücke
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BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
auf Bestellung 4 Stücke:
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4+21.28 EUR
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BCR158E6327 BCR158.pdf
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
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845+0.1 EUR
973+0.088 EUR
1035+0.082 EUR
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BCX70HE6327 BCX70.pdf
BCX70HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
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993+0.086 EUR
1025+0.083 EUR
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BCX71HE6327 BCX71.pdf
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
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600+0.14 EUR
1585+0.054 EUR
1765+0.049 EUR
1995+0.043 EUR
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BCR503E6327HTSA1 BCR503.pdf
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
218+0.39 EUR
250+0.35 EUR
459+0.19 EUR
589+0.14 EUR
685+0.12 EUR
1000+0.11 EUR
1300+0.11 EUR
Mindestbestellmenge: 179 Stücke
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BC847SH6327XTSA1 BC847SH6327.pdf
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
544+0.15 EUR
715+0.12 EUR
807+0.11 EUR
944+0.09 EUR
Mindestbestellmenge: 313 Stücke
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BCX71GE6327 BCX71.pdf
BCX71GE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2720 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
977+0.087 EUR
1085+0.079 EUR
1226+0.069 EUR
1413+0.061 EUR
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BCW67CE6327 BCW67B.pdf
BCW67CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
48+1.77 EUR
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FM24V05-GTR FM24V05-DTE.pdf
FM24V05-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24V05-G FM24V05-DTE.pdf
FM24V05-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM24VN10-GTR FM24VN10-DTE.pdf
FM24VN10-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FM24W256-GTR FM24W256-DTE.pdf
FM24W256-GTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: I2C
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BCX42E6327 BCX42E6327.pdf
BCX42E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Collector current: 0.8A
Mounting: SMD
Collector-emitter voltage: 125V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 150MHz
auf Bestellung 881 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
290+0.3 EUR
468+0.18 EUR
562+0.15 EUR
650+0.13 EUR
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
IAUC100N08S5N031ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 167W
Polarisation: unipolar
Produkt ist nicht verfügbar
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
IAUC100N08S5N034ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.8mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 136W
Gate charge: 66nC
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
IAUC100N08S5N043ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Technology: OptiMOS™ 5
Drain current: 76A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 4.3mΩ
Mounting: SMD
Pulsed drain current: 400A
Power dissipation: 120W
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFU120NPBF irfr120n.pdf
IRFU120NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
auf Bestellung 1380 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
63+1.36 EUR
104+0.82 EUR
115+0.74 EUR
125+0.68 EUR
131+0.65 EUR
150+0.64 EUR
Mindestbestellmenge: 63 Stücke
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CY15B104Q-LHXIT CY15B104Q-DTE.pdf
CY15B104Q-LHXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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CY15B104Q-SXIT CY15B104Q-DTE.pdf
CY15B104Q-SXIT
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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FM1808B-SGTR FM1808B-DTE.pdf
FM1808B-SGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
Produkt ist nicht verfügbar
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BCX41E6327 BCX41.pdf
BCX41E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
232+0.37 EUR
255+0.35 EUR
Mindestbestellmenge: 193 Stücke
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IRFP4868PBF IRFP4868PBF.pdf
IRFP4868PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Power dissipation: 517W
Gate charge: 180nC
Technology: HEXFET®
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IRFP4868PBFAKMA1
IRFP4868PBFAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.97 EUR
14+6.44 EUR
16+5.51 EUR
25+4.82 EUR
Mindestbestellmenge: 13 Stücke
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IRFB4229PBF irfb4229pbf.pdf
IRFB4229PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1074 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.43 EUR
26+3.3 EUR
32+2.68 EUR
35+2.46 EUR
50+2.25 EUR
100+2.07 EUR
200+1.93 EUR
500+1.81 EUR
Mindestbestellmenge: 20 Stücke
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IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Kind of package: tube
Drain current: 316A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: TO247AC
Mounting: THT
Polarisation: unipolar
Produkt ist nicht verfügbar
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IPB017N10N5ATMA1 IPB017N10N5-DTE.pdf
IPB017N10N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB017N06N3GATMA1 IPB017N06N3G-DTE.pdf
IPB017N06N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Topology: MOSFET half-bridge
Produkt ist nicht verfügbar
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62177EV30LL-55BAXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 210 Stücke
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CY62177EV30LL-55ZXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
Produkt ist nicht verfügbar
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CY62177EV18LL-70BAXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 210 Stücke
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CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY62146ELL-45ZSXI CY62146ELL-45ZSXI.PDF
CY62146ELL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+21.13 EUR
Mindestbestellmenge: 5 Stücke
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CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CY62147EV18LL-55BVXIT ?docID=45535
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62147EV30LL-45B2XIT ?docID=45537
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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