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CY62147EV30LL-45ZSXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: SP4T
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S25FL256LAGNFV010 S25FL256LAGNFV010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Operating temperature: -40...105°C
auf Bestellung 1512 Stücke:
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11+8.12 EUR
12+7.52 EUR
13+7.01 EUR
25+6.64 EUR
100+6.28 EUR
338+6.05 EUR
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S25FL127SABNFI101 S25FL127SABNFI101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Case: WSON8
Interface: SPI
Operating voltage: 2.7...3.6V
Part status: Not recommended for new designs
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
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12+7.29 EUR
13+6.77 EUR
14+6.52 EUR
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BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.33W
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SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BAT60BE6359HTMA1 INFINEON TECHNOLOGIES Infineon-BAT60BSERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 56 Stücke:
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13+6.91 EUR
14+6.46 EUR
18+4.94 EUR
20+4.28 EUR
30+3.95 EUR
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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 255W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
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9+9.82 EUR
11+8.5 EUR
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IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES IPP60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 255W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3-1
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10+9.19 EUR
15+6.02 EUR
25+5.95 EUR
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IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES IPP60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 46 Stücke:
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11+7.79 EUR
15+5.97 EUR
17+5.07 EUR
20+5 EUR
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IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES IPP60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 117W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 138 Stücke:
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14+6.38 EUR
15+5.74 EUR
16+5.43 EUR
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IPW60R099CPAFKSA1 IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 80nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Application: automotive industry
Case: TO247-3
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8+11.19 EUR
9+10.33 EUR
10+8.98 EUR
11+8 EUR
20+7.63 EUR
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES IPW60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
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IPB60R099P7ATMA1 IPB60R099P7ATMA1 INFINEON TECHNOLOGIES IPB60R099P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES IPW60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 110W
Polarisation: unipolar
Technology: CoolMOS™ C7
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES IPP60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 110W
Polarisation: unipolar
Technology: CoolMOS™ C7
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 INFINEON TECHNOLOGIES IPZA60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES IPA040N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.72 EUR
50+1.86 EUR
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IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.129Ω
Mounting: THT
Power dissipation: 156W
Gate charge: 67nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES IPW60R070P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 70mΩ
Mounting: THT
Power dissipation: 391W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 53.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 10mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
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FM25VN10-G FM25VN10-G INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
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FM25V20A-DGQTR FM25V20A-DGQTR INFINEON TECHNOLOGIES FM25V20A-DGQ-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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FM25V20A-DGTR FM25V20A-DGTR INFINEON TECHNOLOGIES FM25V20A-DG-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
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IPT010N08NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES IPW60R041C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Mounting: THT
Power dissipation: 481W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 77.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 23 Stücke:
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5+17.85 EUR
6+14.59 EUR
10+13.86 EUR
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IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 32.6nC
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 40nC
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IPB90N04S402ATMA1 IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 118nC
Produkt ist nicht verfügbar
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 60nC
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IPB90N04S402ATMA1 IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
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BSC0902NSIATMA1 BSC0902NSIATMA1 INFINEON TECHNOLOGIES BSC0902NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
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101+0.84 EUR
104+0.82 EUR
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BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES BSC0909NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
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84+1.02 EUR
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
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25+3.51 EUR
30+2.93 EUR
33+2.58 EUR
50+1.83 EUR
100+1.59 EUR
250+1.38 EUR
500+1.26 EUR
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BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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20+4.39 EUR
26+3.39 EUR
29+2.96 EUR
50+2.23 EUR
100+2.01 EUR
250+1.78 EUR
500+1.65 EUR
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BSC093N04LSGATMA1 BSC093N04LSGATMA1 INFINEON TECHNOLOGIES BSC093N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
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71+1.21 EUR
98+0.87 EUR
113+0.75 EUR
135+0.63 EUR
142+0.6 EUR
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BSC0502NSIATMA1 BSC0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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ISZ065N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
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ISZ019N03L5SATMA1 ISZ019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
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BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ040N06LS5ATMA1 BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ033NE2LS5ATMA1 BSZ033NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
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BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
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ISC230N10NM6ATMA1 ISC230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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ISC011N06LM5ATMA1 ISC011N06LM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
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ISC0805NLSATMA1 ISC0805NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC034N10LS5ATMA1 BSC034N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
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IPG20N06S4L26ATMA1 IPG20N06S4L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
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ISC011N03L5SATMA1 ISC011N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
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ISC017N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
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BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 INFINEON TECHNOLOGIES Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
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BSC025N08LS5ATMA1 BSC025N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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BSC0500NSIATMA1 BSC0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0500NSIATMA1 BSZ0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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CY62147EV30LL-45ZSXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Produkt ist nicht verfügbar
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IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Number of channels: 4
Mounting: SMD
Case: TSNP10
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Application: telecommunication
Output configuration: SP4T
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S25FL256LAGNFV010 S25FL.pdf
S25FL256LAGNFV010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Case: WSON8
Operating temperature: -40...105°C
auf Bestellung 1512 Stücke:
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11+8.12 EUR
12+7.52 EUR
13+7.01 EUR
25+6.64 EUR
100+6.28 EUR
338+6.05 EUR
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S25FL127SABNFI101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL127SABNFI101
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Operating temperature: -40...85°C
Memory: 128Mb FLASH
Operating frequency: 108MHz
Kind of interface: serial
Case: WSON8
Interface: SPI
Operating voltage: 2.7...3.6V
Part status: Not recommended for new designs
Kind of memory: NOR
Mounting: SMD
Type of integrated circuit: FLASH memory
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
12+7.29 EUR
13+6.77 EUR
14+6.52 EUR
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BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Kind of package: reel; tape
Power dissipation: 0.33W
Produkt ist nicht verfügbar
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SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.91 EUR
14+6.46 EUR
18+4.94 EUR
20+4.28 EUR
30+3.95 EUR
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IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 255W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.82 EUR
11+8.5 EUR
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IPP60R099CPXKSA1 IPP60R099CP-DTE.pdf
IPP60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 255W
Polarisation: unipolar
Technology: CoolMOS™ CP
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3-1
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+9.19 EUR
15+6.02 EUR
25+5.95 EUR
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IPP60R099C6XKSA1 IPP60R099C6-DTE.pdf
IPP60R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
11+7.79 EUR
15+5.97 EUR
17+5.07 EUR
20+5 EUR
Mindestbestellmenge: 11 Stücke
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IPP60R099P7 IPP60R099P7.pdf
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 117W
Polarisation: unipolar
Technology: CoolMOS™ P7
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
auf Bestellung 138 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.38 EUR
15+5.74 EUR
16+5.43 EUR
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IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
IPW60R099CPAFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 80nC
Polarisation: unipolar
Drain current: 31A
Kind of channel: enhancement
Drain-source voltage: 600V
Application: automotive industry
Case: TO247-3
auf Bestellung 25 Stücke:
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8+11.19 EUR
9+10.33 EUR
10+8.98 EUR
11+8 EUR
20+7.63 EUR
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IPW60R099C6FKSA1 IPW60R099C6-DTE.pdf
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.78 EUR
Mindestbestellmenge: 9 Stücke
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IPB60R099P7ATMA1 IPB60R099P7.pdf
IPB60R099P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R099C7XKSA1 IPW60R099C7-DTE.pdf
IPW60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 110W
Polarisation: unipolar
Technology: CoolMOS™ C7
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C7XKSA1 IPP60R099C7-DTE.pdf
IPP60R099C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 110W
Polarisation: unipolar
Technology: CoolMOS™ C7
Drain current: 22A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
On-state resistance: 99mΩ
Mounting: THT
Power dissipation: 278W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 37.9A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
Produkt ist nicht verfügbar
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IPZA60R099P7XKSA1 IPZA60R099P7.pdf
IPZA60R099P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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IPA040N06NXKSA1 IPA040N06N-DTE.pdf
IPA040N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 69A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
23+3.72 EUR
50+1.86 EUR
Mindestbestellmenge: 23 Stücke
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IPW60R070CFD7 IPW60R070CFD7.pdf
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 0.129Ω
Mounting: THT
Power dissipation: 156W
Gate charge: 67nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
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IPW60R070P6XKSA1 IPW60R070P6-DTE.pdf
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 70mΩ
Mounting: THT
Power dissipation: 391W
Polarisation: unipolar
Technology: CoolMOS™ P6
Drain current: 53.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
Produkt ist nicht verfügbar
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BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Mounting: SMD
Case: PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Kind of channel: enhancement
On-state resistance: 10mΩ
Drain current: 20A
Gate-source voltage: ±20V
Power dissipation: 50W
Drain-source voltage: 60V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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FM25VN10-G Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
Mindestbestellmenge: 485 Stücke
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FM25V20A-DGQTR FM25V20A-DGQ-DTE.pdf
FM25V20A-DGQTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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FM25V20A-DGTR FM25V20A-DG-DTE.pdf
FM25V20A-DGTR
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPT010N08NM5ATMA1 Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IPW60R041C6FKSA1 IPW60R041C6-DTE.pdf
IPW60R041C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 41mΩ
Mounting: THT
Power dissipation: 481W
Polarisation: unipolar
Technology: CoolMOS™ C6
Drain current: 77.5A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+17.85 EUR
6+14.59 EUR
10+13.86 EUR
Mindestbestellmenge: 5 Stücke
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IPC90N04S5-3R6
IPC90N04S5-3R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 63W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 32.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC90N04S5L-3R3
IPC90N04S5L-3R3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 40nC
Produkt ist nicht verfügbar
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPB90N04S402ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 118nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T
Polarisation: unipolar
Gate charge: 60nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
IPB90N04S402ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 150W
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+1.67 EUR
Mindestbestellmenge: 1000 Stücke
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BSC0902NSIATMA1 BSC0902NSI-DTE.pdf
BSC0902NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 4433 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
74+1.15 EUR
91+0.94 EUR
101+0.84 EUR
104+0.82 EUR
Mindestbestellmenge: 74 Stücke
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BSC0909NSATMA1 BSC0909NS-DTE.pdf
BSC0909NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
79+1.09 EUR
84+1.02 EUR
Mindestbestellmenge: 79 Stücke
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BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
auf Bestellung 873 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.51 EUR
30+2.93 EUR
33+2.58 EUR
50+1.83 EUR
100+1.59 EUR
250+1.38 EUR
500+1.26 EUR
Mindestbestellmenge: 25 Stücke
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BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 3700 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
29+3.01 EUR
Mindestbestellmenge: 29 Stücke
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BSC028N06NSATMA1 BSC028N06NS-DTE.pdf
BSC028N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 1650 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
20+4.39 EUR
26+3.39 EUR
29+2.96 EUR
50+2.23 EUR
100+2.01 EUR
250+1.78 EUR
500+1.65 EUR
Mindestbestellmenge: 20 Stücke
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BSC093N04LSGATMA1 BSC093N04LSG-DTE.pdf
BSC093N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
auf Bestellung 3069 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.21 EUR
98+0.87 EUR
113+0.75 EUR
135+0.63 EUR
142+0.6 EUR
Mindestbestellmenge: 71 Stücke
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BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
BSC0502NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8 FL
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
ISZ019N03L5SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Case: PG-TDSON-8
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
BSZ065N06LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
BSZ040N06LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 6.6nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ033NE2LS5ATMA1 Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820
BSZ033NE2LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
BSZ070N08LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC230N10NM6ATMA1 Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a
ISC230N10NM6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
BSC065N06LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC011N06LM5ATMA1 Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea
ISC011N06LM5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
ISC0805NLSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC034N10LS5ATMA1 Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7
BSC034N10LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
IPG20N06S4L26ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC011N03L5SATMA1 Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982
ISC011N03L5SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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ISC017N04NM5ATMA1 Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
BSC015NE2LS5IATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC025N08LS5ATMA1 Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4
BSC025N08LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC0500NSIATMA1 Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362
BSC0500NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSZ0500NSIATMA1 Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad
BSZ0500NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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