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IDH10G120C5XKSA1 IDH10G120C5XKSA1 Infineon Technologies Infineon-IDH10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f748a23416bc6 Description: DIODE SIC 1.2KV 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.13 EUR
50+4.62 EUR
100+4.17 EUR
Mindestbestellmenge: 3
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IDH12G65C5XKSA1 IDH12G65C5XKSA1 Infineon Technologies Infineon-IDH12G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a06bcacb10185 Description: DIODE SIL CARB 650V 12A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Produkt ist nicht verfügbar
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IDH16G120C5XKSA1 IDH16G120C5XKSA1 Infineon Technologies Infineon-IDH16G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f74aeda446e4a Description: DIODE SIC 1.2KV 16A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.28 EUR
50+5.49 EUR
100+5.03 EUR
Mindestbestellmenge: 2
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IDK02G65C5XTMA1 IDK02G65C5XTMA1 Infineon Technologies Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
Produkt ist nicht verfügbar
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IDK03G65C5XTMA1 IDK03G65C5XTMA1 Infineon Technologies Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089 Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
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IDK04G65C5XTMA1 Infineon Technologies Infineon-IDK04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb938e7500a4 Description: DIODE SCHOTTKY 650V 4A TO263-2
Produkt ist nicht verfügbar
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IDK05G65C5XTMA1 IDK05G65C5XTMA1 Infineon Technologies Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
Produkt ist nicht verfügbar
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IDK06G65C5XTMA1 IDK06G65C5XTMA1 Infineon Technologies Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a Description: DIODE SCHOTTKY 650V 6A TO263-2
Produkt ist nicht verfügbar
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IDK08G65C5XTMA1 IDK08G65C5XTMA1 Infineon Technologies Infineon-IDK08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fb993f814e2e Description: DIODE SIL CARB 650V 8A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 650 V
Produkt ist nicht verfügbar
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IDK09G65C5XTMA1 IDK09G65C5XTMA1 Infineon Technologies Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59 Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
Produkt ist nicht verfügbar
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IDK10G65C5XTMA1 IDK10G65C5XTMA1 Infineon Technologies Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3 Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 650 V
Produkt ist nicht verfügbar
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IDK12G65C5XTMA1 IDK12G65C5XTMA1 Infineon Technologies Infineon-IDK12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fc0b73ae4ef3 Description: DIODE SCHOTTKY 650V 12A TO263-2
Produkt ist nicht verfügbar
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IDL02G65C5XUMA1 IDL02G65C5XUMA1 Infineon Technologies Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d Description: DIODE SIL CARBIDE 650V 2A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Produkt ist nicht verfügbar
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IDL04G65C5XUMA1 IDL04G65C5XUMA1 Infineon Technologies Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Produkt ist nicht verfügbar
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IDL06G65C5XUMA1 IDL06G65C5XUMA1 Infineon Technologies Infineon-IDL06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304ea9ff45bcc Description: DIODE SCHOTTKY 650V 6A VSON-4
Produkt ist nicht verfügbar
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IDL08G65C5XUMA1 IDL08G65C5XUMA1 Infineon Technologies Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9 Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Produkt ist nicht verfügbar
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IDL10G65C5XUMA1 Infineon Technologies Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06 Description: DIODE SCHOTTKY 650V 10A VSON-4
Produkt ist nicht verfügbar
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IDL12G65C5XUMA1 Infineon Technologies Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28 Description: DIODE SCHOTTKY 650V 12A VSON-4
Produkt ist nicht verfügbar
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IDM02G120C5XTMA1 IDM02G120C5XTMA1 Infineon Technologies Infineon-IDM02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c3fa614236 Description: DIODE SIL CARB 1200V 2A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.08 EUR
5000+1.04 EUR
Mindestbestellmenge: 2500
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IDM05G120C5XTMA1 IDM05G120C5XTMA1 Infineon Technologies Infineon-IDM05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef201501340f8f84748 Description: DIODE SIL CARB 1200V 5A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Produkt ist nicht verfügbar
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IDM08G120C5XTMA1 IDM08G120C5XTMA1 Infineon Technologies Infineon-IDM08G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c4028b4239 Description: DIODE SIL CARB 1200V 8A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 2500 Stücke:
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2500+1.78 EUR
Mindestbestellmenge: 2500
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IDP1301GXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: DIODE GEN PURP DSO-19
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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IDP20E65D2XKSA1 IDP20E65D2XKSA1 Infineon Technologies Infineon-IDP20E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c45c5fe3eae Description: DIODE GP 650V 40A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.56 EUR
50+1.72 EUR
100+1.54 EUR
Mindestbestellmenge: 5
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IDP30E65D1XKSA1 IDP30E65D1XKSA1 Infineon Technologies Infineon-IDP30E65D1-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493816a4eb19a2 Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.98 EUR
50+2.47 EUR
100+2.23 EUR
500+1.8 EUR
Mindestbestellmenge: 4
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IDV20E65D1XKSA1 IDV20E65D1XKSA1 Infineon Technologies Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7 Description: DIODE STANDARD 650V 28A PGTO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
50+1.2 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8
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IDW20G65C5BXKSA1 IDW20G65C5BXKSA1 Infineon Technologies Infineon-IDW20G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44f2f29d49b0 Description: DIODE SCHOTTKY 650V 10A TO247-3
Produkt ist nicht verfügbar
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IDW24G65C5BXKSA1 IDW24G65C5BXKSA1 Infineon Technologies Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906 Description: DIODE ARR SIC 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Produkt ist nicht verfügbar
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IDW30E60FKSA1 IDW30E60FKSA1 Infineon Technologies Infineon-IDW30E60_1-DS-v01_01-en.pdf?fileId=db3a3043338c8ac80133abdec5bc2fe3 Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.96 EUR
10+4.45 EUR
100+3.57 EUR
Mindestbestellmenge: 4
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IDW32G65C5BXKSA1 IDW32G65C5BXKSA1 Infineon Technologies Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272 Description: DIODE SCHOTTKY 650V 16A TO247-3
Produkt ist nicht verfügbar
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IDW40G65C5BXKSA1 IDW40G65C5BXKSA1 Infineon Technologies Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1 Description: DIODE ARR SIC 650V 20A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
Produkt ist nicht verfügbar
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IFX1763LDV50XUMA1 IFX1763LDV50XUMA1 Infineon Technologies INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 5V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763LDVXUMA1 IFX1763LDVXUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763XEJV33XUMA1 IFX1763XEJV33XUMA1 Infineon Technologies INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763XEJV50XUMA1 IFX1763XEJV50XUMA1 Infineon Technologies INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR 5V 500MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV33XUMA1 IFX54441EJV33XUMA1 Infineon Technologies INFN-S-A0000606214-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 300MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX54441EJV50XUMA1 IFX54441EJV50XUMA1 Infineon Technologies INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX54441LDV33XUMA1 IFX54441LDV33XUMA1 Infineon Technologies Infineon-IFX54441-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bcac47a464f95 Description: IC REG LINEAR 3.3V 300MA TSON-10
Produkt ist nicht verfügbar
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IFX54441LDV50XUMA1 IFX54441LDV50XUMA1 Infineon Technologies INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 5V 300MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX81481ELVXUMA1 IFX81481ELVXUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC REG CTRLR BUCK 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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IGCM04B60GAXKMA1 IGCM04B60GAXKMA1 Infineon Technologies IGCM04B60GA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM04B60HAXKMA1 IGCM04B60HAXKMA1 Infineon Technologies IGCM04B60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
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IGCM04F60GAXKMA1 IGCM04F60GAXKMA1 Infineon Technologies INFN-S-A0003726087-1.pdf?t.download=true&u=5oefqw Description: MODULE IGBT 600V 4A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 4 A
Voltage: 600 V
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IGCM04F60HAXKMA1 IGCM04F60HAXKMA1 Infineon Technologies IGCM04F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM04G60GAXKMA1 IGCM04G60GAXKMA1 Infineon Technologies Infineon-IGCM04G60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcae7fc6177f0 Description: IGBT 600V 4A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 4 A
Voltage: 600 V
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IGCM06B60GAXKMA1 IGCM06B60GAXKMA1 Infineon Technologies IGCM06B60GA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM06B60HAXKMA1 IGCM06B60HAXKMA1 Infineon Technologies IGCM06B60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM06F60HAXKMA1 IGCM06F60HAXKMA1 Infineon Technologies IGCM06F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
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IGCM06G60HAXKMA1 IGCM06G60HAXKMA1 Infineon Technologies IGCM06G60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HAXKMA1 Infineon Technologies IGCM10F60HA.pdf Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM15F60HAXKMA1 IGCM15F60HAXKMA1 Infineon Technologies IGCM15F60HA.pdf Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
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IGCM20F60GAXKMA1 IGCM20F60GAXKMA1 Infineon Technologies Infineon-IGCM20F60GA-DS-v01_06-EN.pdf?fileId=5546d4624fb7fef2014fcb1efd587879 Description: IGBT 600V 20A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
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IGCM20F60HAXKMA1 IGCM20F60HAXKMA1 Infineon Technologies IGCM20F60HA.pdf Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGW40N65F5AXKSA1 IGW40N65F5AXKSA1 Infineon Technologies IGW40N65F5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW40N65H5AXKSA1 IGW40N65H5AXKSA1 Infineon Technologies IGW40N65H5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65F5AXKSA1 IGW50N65F5AXKSA1 Infineon Technologies IGW50N65F5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW50N65H5AXKSA1 IGW50N65H5AXKSA1 Infineon Technologies IGW50N65H5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
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IGW60N60H3FKSA1 IGW60N60H3FKSA1 Infineon Technologies Infineon-IGW60N60H3-DS-v01_01-en.pdf?fileId=db3a304339dcf4b10139dd4fd82c0023 Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
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120+4.41 EUR
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 Infineon Technologies Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713 Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/220ns
Switching Energy: 850µJ (on), 240µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
auf Bestellung 389 Stücke:
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4+4.54 EUR
30+2.44 EUR
120+1.98 EUR
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IJW120R100T1FKSA1 IJW120R100T1FKSA1 Infineon Technologies IJW120R100T1.pdf Description: JFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 26 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 190 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
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IKB20N60TAATMA1 IKB20N60TAATMA1 Infineon Technologies IKB20N60TA.pdf Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
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IDH10G120C5XKSA1 Infineon-IDH10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f748a23416bc6
IDH10G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 10A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 525pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
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Anzahl Preis
3+8.13 EUR
50+4.62 EUR
100+4.17 EUR
Mindestbestellmenge: 3
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IDH12G65C5XKSA1 Infineon-IDH12G65C5-DS-v02_02-en.pdf?fileId=db3a30433a047ba0013a06bcacb10185
IDH12G65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 12A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 360pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDH16G120C5XKSA1 Infineon-IDH16G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f74aeda446e4a
IDH16G120C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIC 1.2KV 16A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 730pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 16 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
auf Bestellung 471 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.28 EUR
50+5.49 EUR
100+5.03 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IDK02G65C5XTMA1 Infineon-IDK02G65C5-DS-v02_00-en.pdf?fileId=db3a304342c787030142e6f880f921bd
IDK02G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 2A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Current - Reverse Leakage @ Vr: 330 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK03G65C5XTMA1 Infineon-IDK03G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb7618470089
IDK03G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 3A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 100pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK04G65C5XTMA1 Infineon-IDK04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142eb938e7500a4
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 4A TO263-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK05G65C5XTMA1 Infineon-IDK05G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec794447014e
IDK05G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 5A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 160pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 830 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK06G65C5XTMA1 Infineon-IDK06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ec85d5a1016a
IDK06G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 6A TO263-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK08G65C5XTMA1 Infineon-IDK08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fb993f814e2e
IDK08G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 8A TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 8 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK09G65C5XTMA1 Infineon-IDK09G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbaec0384e59
IDK09G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 9A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 270pF @ 1V, 1MHz
Current - Average Rectified (Io): 9A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 9 A
Current - Reverse Leakage @ Vr: 1.6 mA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK10G65C5XTMA1 Infineon-IDK10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fbfb87cd4ed3
IDK10G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO2632
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 1.7 mA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDK12G65C5XTMA1 Infineon-IDK12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142fc0b73ae4ef3
IDK12G65C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 12A TO263-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL02G65C5XUMA1 Infineon-IDL02G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0142ffd4f05a141d
IDL02G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL04G65C5XUMA1 Infineon-IDL04G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143000fb94c146a
IDL04G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 4A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL06G65C5XUMA1 Infineon-IDL06G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304ea9ff45bcc
IDL06G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 6A VSON-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL08G65C5XUMA1 Infineon-IDL08G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014304f77a235be9
IDL08G65C5XUMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 8A VSON-4
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-VSON-4
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL10G65C5XUMA1 Infineon-IDL10G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c0143050c02185c06
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 10A VSON-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDL12G65C5XUMA1 Infineon-IDL12G65C5-DS-v02_00-en.pdf?fileId=db3a304342e8be2c014305242a5d5c28
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 12A VSON-4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDM02G120C5XTMA1 Infineon-IDM02G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c3fa614236
IDM02G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 2A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.08 EUR
5000+1.04 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDM05G120C5XTMA1 Infineon-IDM05G120C5-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef201501340f8f84748
IDM05G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 5A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 301pF @ 1V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 33 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDM08G120C5XTMA1 Infineon-IDM08G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c4028b4239
IDM08G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1200V 8A PGTO2522
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.78 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IDP1301GXUMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: DIODE GEN PURP DSO-19
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDP20E65D2XKSA1 Infineon-IDP20E65D2-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493c45c5fe3eae
IDP20E65D2XKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 40A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 32 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
50+1.72 EUR
100+1.54 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IDP30E65D1XKSA1 Infineon-IDP30E65D1-DS-v02_01-EN.pdf?fileId=5546d4624933b87501493816a4eb19a2
IDP30E65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 64 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 655 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.98 EUR
50+2.47 EUR
100+2.23 EUR
500+1.8 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IDV20E65D1XKSA1 Infineon-IDV20E65D1-DS-v02_01-EN.pdf?fileId=5546d4624923e78d0149329dc06a76e7
IDV20E65D1XKSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 650V 28A PGTO2202
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 28A
Supplier Device Package: PG-TO220-2 Full Pack
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
50+1.2 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G65C5BXKSA1 Infineon-IDW20G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44f2f29d49b0
IDW20G65C5BXKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 10A TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW24G65C5BXKSA1 Infineon-IDW24G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e44b312b44906
IDW24G65C5BXKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 650V 12A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 190 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW30E60FKSA1 Infineon-IDW30E60_1-DS-v01_01-en.pdf?fileId=db3a3043338c8ac80133abdec5bc2fe3
IDW30E60FKSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.96 EUR
10+4.45 EUR
100+3.57 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IDW32G65C5BXKSA1 Infineon-IDW32G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e43e016e41272
IDW32G65C5BXKSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 650V 16A TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW40G65C5BXKSA1 Infineon-IDW40G65C5B-DS-v02_00-EN.pdf?fileId=5546d4624e24005f014e451799b149e1
IDW40G65C5BXKSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SIC 650V 20A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
Produkt ist nicht verfügbar
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IFX1763LDV50XUMA1 INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw
IFX1763LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
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IFX1763LDVXUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763LDVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763XEJV33XUMA1 INFN-S-A0001171796-1.pdf?t.download=true&u=5oefqw
IFX1763XEJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 500MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX1763XEJV50XUMA1 INFN-S-A0001300355-1.pdf?t.download=true&u=5oefqw
IFX1763XEJV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 500MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.48V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Produkt ist nicht verfügbar
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IFX54441EJV33XUMA1 INFN-S-A0000606214-1.pdf?t.download=true&u=5oefqw
IFX54441EJV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 300MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.4V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX54441EJV50XUMA1 INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw
IFX54441EJV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA 8DSO E-PAD
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX54441LDV33XUMA1 Infineon-IFX54441-DS-v01_01-EN.pdf?fileId=5546d4624bbf60fb014bcac47a464f95
IFX54441LDV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 300MA TSON-10
Produkt ist nicht verfügbar
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IFX54441LDV50XUMA1 INFN-S-A0001300605-1.pdf?t.download=true&u=5oefqw
IFX54441LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 300MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.41V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 12 mA
Produkt ist nicht verfügbar
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IFX81481ELVXUMA1 Part_Number_Guide_Web.pdf
IFX81481ELVXUMA1
Hersteller: Infineon Technologies
Description: IC REG CTRLR BUCK 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 700kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.75V ~ 45V
Supplier Device Package: PG-SSOP-14-3
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Frequency Control
Output Phases: 1
Duty Cycle (Max): 99%
Clock Sync: Yes
Part Status: Obsolete
Number of Outputs: 1
Produkt ist nicht verfügbar
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IGCM04B60GAXKMA1 IGCM04B60GA.pdf
IGCM04B60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
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IGCM04B60HAXKMA1 IGCM04B60HA.pdf
IGCM04B60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
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IGCM04F60GAXKMA1 INFN-S-A0003726087-1.pdf?t.download=true&u=5oefqw
IGCM04F60GAXKMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 4A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 4 A
Voltage: 600 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.52 EUR
14+10.15 EUR
112+7.8 EUR
Mindestbestellmenge: 2
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IGCM04F60HAXKMA1 IGCM04F60HA.pdf
IGCM04F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM04G60GAXKMA1 Infineon-IGCM04G60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcae7fc6177f0
IGCM04G60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 4A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 4 A
Voltage: 600 V
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.8 EUR
14+8.36 EUR
112+7.24 EUR
Mindestbestellmenge: 2
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IGCM06B60GAXKMA1 IGCM06B60GA.pdf
IGCM06B60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM06B60HAXKMA1 IGCM06B60HA.pdf
IGCM06B60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM06F60HAXKMA1 IGCM06F60HA.pdf
IGCM06F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM06G60HAXKMA1 IGCM06G60HA.pdf
IGCM06G60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HA.pdf
IGCM10F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 10A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM15F60HAXKMA1 IGCM15F60HA.pdf
IGCM15F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGCM20F60GAXKMA1 Infineon-IGCM20F60GA-DS-v01_06-EN.pdf?fileId=5546d4624fb7fef2014fcb1efd587879
IGCM20F60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 20A 24PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.07 EUR
14+14.77 EUR
112+11.59 EUR
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IGCM20F60HAXKMA1 IGCM20F60HA.pdf
IGCM20F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IGW40N65F5AXKSA1 IGW40N65F5A.pdf
IGW40N65F5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGW40N65H5AXKSA1 IGW40N65H5A.pdf
IGW40N65H5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGW50N65F5AXKSA1 IGW50N65F5A.pdf
IGW50N65F5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/156ns
Switching Energy: 490µJ (on), 140µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 108 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGW50N65H5AXKSA1 IGW50N65H5A.pdf
IGW50N65H5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 21ns/173ns
Switching Energy: 450µJ (on), 160µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 270 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IGW60N60H3FKSA1 Infineon-IGW60N60H3-DS-v01_01-en.pdf?fileId=db3a304339dcf4b10139dd4fd82c0023
IGW60N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.29 EUR
30+5.29 EUR
120+4.41 EUR
Mindestbestellmenge: 2
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IHW30N65R5XKSA1 Infineon-IHW30N65R5-DS-v02_01-EN.pdf?fileId=5546d4624d6fc3d5014db954d0454713
IHW30N65R5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 29ns/220ns
Switching Energy: 850µJ (on), 240µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 153 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 176 W
auf Bestellung 389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
30+2.44 EUR
120+1.98 EUR
Mindestbestellmenge: 4
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IJW120R100T1FKSA1 IJW120R100T1.pdf
IJW120R100T1FKSA1
Hersteller: Infineon Technologies
Description: JFET N-CH 1.2KV 26A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 19.5V (VGS)
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 26 A
Supplier Device Package: PG-TO247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 190 W
Resistance - RDS(On): 100 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 1.5 µA @ 1200 V
Produkt ist nicht verfügbar
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IKB20N60TAATMA1 IKB20N60TA.pdf
IKB20N60TAATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 41 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 20A
Supplier Device Package: PG-TO263-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/199ns
Switching Energy: 310µJ (on), 460µJ (off)
Test Condition: 600V, 20A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 156 W
Produkt ist nicht verfügbar
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