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IKD10N60RFAATMA1 IKD10N60RFAATMA1 Infineon Technologies IKD10N60RFA.pdf Description: IGBT TRENCH 600V 20A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 64 nC
Test Condition: 400V, 10A, 26Ohm, 15V
Switching Energy: 190µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 12ns/168ns
IGBT Type: Trench
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IKD15N60RFAATMA1 IKD15N60RFAATMA1 Infineon Technologies IKD15N60RFA.pdf Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Grade: Automotive
Qualification: AEC-Q101
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IKQ100N60TAXKSA1 IKQ100N60TAXKSA1 Infineon Technologies IKQ100N60TA.pdf Description: IGBT 600V TO247-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 714 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 160 A
Part Status: Not For New Designs
Gate Charge: 610 nC
Test Condition: 400V, 100A, 3.6Ohm, 15V
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 30ns/290ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Reverse Recovery Time (trr): 225 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IKQ100N60TXKSA1 IKQ100N60TXKSA1 Infineon Technologies Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2 Description: IGBT TRENCH/FS 600V 160A TO247-3
Power - Max: 714 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 160 A
Gate Charge: 610 nC
Test Condition: 400V, 100A, 3.6Ohm, 15V
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 30ns/290ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Reverse Recovery Time (trr): 230 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IKQ120N60TAXKSA1 IKQ120N60TAXKSA1 Infineon Technologies IKQ120N60TA.pdf Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 280 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Grade: Automotive
Qualification: AEC-Q101
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 Infineon Technologies IKW30N65WR5_DS.pdf Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
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IKW40N65F5AXKSA1 IKW40N65F5AXKSA1 Infineon Technologies IKW40N65F5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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IKW40N65H5AXKSA1 IKW40N65H5AXKSA1 Infineon Technologies IKW40N65H5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 380µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 20ns/153ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 75 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Obsolete
Gate Charge: 92 nC
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IKW50N65F5AXKSA1 IKW50N65F5AXKSA1 Infineon Technologies IKW50N65F5A.pdf Description: IGBT TRENCH 650V 80A TO247-3
Power - Max: 270 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 108 nC
Test Condition: 400V, 25A, 12Ohm, 15V
Switching Energy: 490µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 21ns/156ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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IKW50N65WR5XKSA1 IKW50N65WR5XKSA1 Infineon Technologies Infineon-IKW50N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c7099770661b8 Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/417ns
Switching Energy: 840µJ (on), 220µJ (off)
Test Condition: 400V, 25A, 16Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
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IKW60N60H3FKSA1 IKW60N60H3FKSA1 Infineon Technologies Infineon-IKW60N60H3-DS-v01_02-en.pdf?fileId=db3a304339dcf4b10139dd87e517004f Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
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ILD1150XUMA1 ILD1150XUMA1 Infineon Technologies Infineon-ILD1150-DS-v01_01-en.pdf?fileId=db3a30433784a0400138049268c94c20 Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
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ILD4071XUMA1 ILD4071XUMA1 Infineon Technologies ILD4071.pdf Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 300kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 40V
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IPA041N04NGXKSA1 IPA041N04NGXKSA1 Infineon Technologies Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c Description: MOSFET N-CH 40V 70A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 70A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
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IPA060N06NXKSA1 IPA060N06NXKSA1 Infineon Technologies DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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IPA60R099C7XKSA1 IPA60R099C7XKSA1 Infineon Technologies Infineon-IPA60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd68760b06999 Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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10+7.93 EUR
50+6.26 EUR
100+5.72 EUR
500+4.78 EUR
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IPA60R180C7XKSA1 IPA60R180C7XKSA1 Infineon Technologies Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d Description: MOSFET N-CH 600V 9A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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IPA65R045C7XKSA1 IPA65R045C7XKSA1 Infineon Technologies INFNS29944-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 18A TO220-FP
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IPA65R065C7XKSA1 IPA65R065C7XKSA1 Infineon Technologies Infineon-IPA65R065C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be66fa89001a Description: MOSFET N-CH 650V 15A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+8.28 EUR
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IPA65R095C7XKSA1 IPA65R095C7XKSA1 Infineon Technologies Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b Description: MOSFET N-CH 650V 12A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+5 EUR
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IPA65R125C7XKSA1 IPA65R125C7XKSA1 Infineon Technologies Infineon-IPA65R125C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be863f5d005b Description: MOSFET N-CH 650V 10A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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50+4.31 EUR
100+4.08 EUR
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IPA65R225C7XKSA1 IPA65R225C7XKSA1 Infineon Technologies Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63 Description: MOSFET N-CH 650V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 Infineon Technologies Infineon-IPA80R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b Description: MOSFET N-CH 800V 5.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 IPB015N08N5ATMA1 Infineon Technologies Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96 Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 2000 Stücke:
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1000+5.63 EUR
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IPB020N08N5ATMA1 IPB020N08N5ATMA1 Infineon Technologies Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
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1000+3.02 EUR
3000+2.75 EUR
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IPB031N08N5ATMA1 IPB031N08N5ATMA1 Infineon Technologies Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81 Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.27 EUR
3000+2.05 EUR
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IPB065N10N3GATMA1 IPB065N10N3GATMA1 Infineon Technologies Infineon-IPB065N10N3+G-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014b7983a7000f6f Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Produkt ist nicht verfügbar
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IPB120N03S4L03ATMA1 IPB120N03S4L03ATMA1 Infineon Technologies Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466 Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB120N04S404ATMA1 IPB120N04S404ATMA1 Infineon Technologies Infineon-IPB120N04S4-04-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3ce545c062f Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB140N08S404ATMA1 IPB140N08S404ATMA1 Infineon Technologies IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b Description: MOSFET N-CH 80V 140A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 161W (Tc)
Produkt ist nicht verfügbar
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IPB160N08S403ATMA1 IPB160N08S403ATMA1 Infineon Technologies IPB160N08S4-03.pdf Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180N04S4LH0ATMA1 IPB180N04S4LH0ATMA1 Infineon Technologies Infineon-IPB180N04S4LH010-DS-v01_00-en.pdf?fileId=5546d461464245d3014670cf90ea6434 Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB180N08S402ATMA1 IPB180N08S402ATMA1 Infineon Technologies IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 7000 Stücke
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IPB180N10S402ATMA1 IPB180N10S402ATMA1 Infineon Technologies Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB240N03S4LR9ATMA1 IPB240N03S4LR9ATMA1 Infineon Technologies Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479 Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB60R199CPAATMA1 IPB60R199CPAATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB60R330P6ATMA1 IPB60R330P6ATMA1 Infineon Technologies INFNS28173-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600P6ATMA1 IPB60R600P6ATMA1 Infineon Technologies Infineon-IPB60R600P6-DS-v02_02-EN.pdf?fileId=5546d4624e765da5014edfa8aa5852d5 Description: MOSFET N-CH 600V 7.3A D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Produkt ist nicht verfügbar
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IPB65R065C7ATMA1 IPB65R065C7ATMA1 Infineon Technologies Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788 Description: MOSFET N-CH 600V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB65R095C7ATMA1 IPB65R095C7ATMA1 Infineon Technologies Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6 Description: MOSFET N-CH 650V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 IPB65R110CFDAATMA1 Infineon Technologies Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.03 EUR
Mindestbestellmenge: 1000 Stücke
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IPB65R125C7ATMA1 IPB65R125C7ATMA1 Infineon Technologies Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5 Description: MOSFET N-CH 650V 18A D2PAK
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 440µA
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IPB65R190C7ATMA1 IPB65R190C7ATMA1 Infineon Technologies Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1 Description: MOSFET N-CH 650V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
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IPB65R280E6ATMA1 IPB65R280E6ATMA1 Infineon Technologies Infineon-IPB65R280E6-DS-v02_00-en.pdf?fileId=db3a30432ea425a4012ede130fa67128 Description: MOSFET N-CH 650V 13.8A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
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IPB80N08S406ATMA1 IPB80N08S406ATMA1 Infineon Technologies IPx80N08S4-06.pdf Description: MOSFET N-CH 80V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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IPB80P04P405ATMA1 Infineon Technologies Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a Description: MOSFET P-CH TO263-3
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IPB80P04P4L04ATMA1 IPB80P04P4L04ATMA1 Infineon Technologies Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a Description: MOSFET P-CH 40V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB80P04P4L06ATMA1 IPB80P04P4L06ATMA1 Infineon Technologies Infineon-IPP_B_I80P04P4L-DS-06-v01_00-en.pdf?fileId=db3a30432f69f146012f782f18402e14 Description: MOSFET P-CH 40V 80A TO263-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IPB80R290C3AATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET P-CH TO263-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPC100N04S402ATMA1 Infineon Technologies IPC100N04S4-02.pdf Description: MOSFET N-CH 40V 100A 8TDSON
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 150W (Tc)
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IPC60N04S406ATMA1 Infineon Technologies IPC60N04S4-06.pdf Description: MOSFET N-CH 40V 60A TDSON-8-23
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
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IPC60N04S4L06ATMA1 Infineon Technologies IPC60N04S4L-06.pdf Description: MOSFET N-CH 40V 60A TDSON-8-23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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IPC80N04S403ATMA1 Infineon Technologies IPC80N04S4-03.pdf Description: MOSFET N-CH 40V 80A TDSON-8-23
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
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IPD40N03S4L08ATMA1 IPD40N03S4L08ATMA1 Infineon Technologies Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78 Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies INFNS15258-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD60N10S4L12ATMA1 IPD60N10S4L12ATMA1 Infineon Technologies Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505 Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD65R650CEATMA1 IPD65R650CEATMA1 Infineon Technologies dgdl?folderId=5546d4624c9e0f0e014c9e8dfd1515f0&fileId=5546d4624d6fc3d5014d7220d45a1844 Description: MOSFET N-CH 650V 10.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IPD65R950C6ATMA1 IPD65R950C6ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 650V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IPD70P04P409ATMA1 IPD70P04P409ATMA1 Infineon Technologies Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51 Description: MOSFET P-CH 40V 73A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IPD80R1K0CEATMA1 IPD80R1K0CEATMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO252-3
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
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IKD10N60RFAATMA1 IKD10N60RFA.pdf
IKD10N60RFAATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 20A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 150 W
Current - Collector Pulsed (Icm): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
Gate Charge: 64 nC
Test Condition: 400V, 10A, 26Ohm, 15V
Switching Energy: 190µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 12ns/168ns
IGBT Type: Trench
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IKD15N60RFAATMA1 IKD15N60RFA.pdf
IKD15N60RFAATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 240 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKQ100N60TAXKSA1 IKQ100N60TA.pdf
IKQ100N60TAXKSA1
Hersteller: Infineon Technologies
Description: IGBT 600V TO247-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 714 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 160 A
Part Status: Not For New Designs
Gate Charge: 610 nC
Test Condition: 400V, 100A, 3.6Ohm, 15V
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 30ns/290ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Reverse Recovery Time (trr): 225 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IKQ100N60TXKSA1 Infineon-IKQ100N60T-DS-v02_02-EN.pdf?fileId=5546d46249cd10140149d2278ce24df2
IKQ100N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 160A TO247-3
Power - Max: 714 W
Current - Collector Pulsed (Icm): 400 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 160 A
Gate Charge: 610 nC
Test Condition: 400V, 100A, 3.6Ohm, 15V
Switching Energy: 3.1mJ (on), 2.5mJ (off)
Td (on/off) @ 25°C: 30ns/290ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Reverse Recovery Time (trr): 230 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IKQ120N60TAXKSA1 IKQ120N60TA.pdf
IKQ120N60TAXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 160A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 280 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/310ns
Switching Energy: 4.1mJ (on), 2.8mJ (off)
Test Condition: 400V, 120A, 3Ohm, 15V
Gate Charge: 772 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 833 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKW30N65WR5XKSA1 IKW30N65WR5_DS.pdf
IKW30N65WR5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 95 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 39ns/367ns
Switching Energy: 990µJ (on), 330µJ (off)
Test Condition: 400V, 15A, 26Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 185 W
auf Bestellung 319 Stücke:
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AnzahlPrivatkunde
4+6.34 EUR
30+3.44 EUR
120+2.8 EUR
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IKW40N65F5AXKSA1 IKW40N65F5A.pdf
IKW40N65F5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 73 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 19ns/165ns
Switching Energy: 350µJ (on), 100µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IKW40N65H5AXKSA1 IKW40N65H5A.pdf
IKW40N65H5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 380µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 20ns/153ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Reverse Recovery Time (trr): 75 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Obsolete
Gate Charge: 92 nC
Produkt ist nicht verfügbar
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IKW50N65F5AXKSA1 IKW50N65F5A.pdf
IKW50N65F5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Power - Max: 270 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 108 nC
Test Condition: 400V, 25A, 12Ohm, 15V
Switching Energy: 490µJ (on), 140µJ (off)
Td (on/off) @ 25°C: 21ns/156ns
IGBT Type: Trench
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 77 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IKW50N65WR5XKSA1 Infineon-IKW50N65WR5-DS-v02_01-EN.pdf?fileId=5546d4624c330ffd014c7099770661b8
IKW50N65WR5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 45ns/417ns
Switching Energy: 840µJ (on), 220µJ (off)
Test Condition: 400V, 25A, 16Ohm, 15V
Gate Charge: 230 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 282 W
auf Bestellung 314 Stücke:
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3+7.75 EUR
30+4.24 EUR
120+3.47 EUR
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IKW60N60H3FKSA1 Infineon-IKW60N60H3-DS-v01_02-en.pdf?fileId=db3a304339dcf4b10139dd87e517004f
IKW60N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
auf Bestellung 59 Stücke:
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2+14.49 EUR
30+8.38 EUR
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ILD1150XUMA1 Infineon-ILD1150-DS-v01_01-en.pdf?fileId=db3a30433784a0400138049268c94c20
ILD1150XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: PWM
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 45V
Produkt ist nicht verfügbar
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ILD4071XUMA1 ILD4071.pdf
ILD4071XUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR PWM 700MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 50kHz ~ 300kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Current - Output / Channel: 700mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8
Dimming: PWM
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 40V
Produkt ist nicht verfügbar
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IPA041N04NGXKSA1 Infineon-IPA041N04N_G-DS-v02_00-en.pdf?fileId=5546d46145460399014560aaf8193f1c
IPA041N04NGXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 70A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
auf Bestellung 280 Stücke:
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7+3.37 EUR
50+1.62 EUR
100+1.45 EUR
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IPA060N06NXKSA1 DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf
IPA060N06NXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Produkt ist nicht verfügbar
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IPA60R099C7XKSA1 Infineon-IPA60R099C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd68760b06999
IPA60R099C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
auf Bestellung 540 Stücke:
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AnzahlPrivatkunde
2+11.82 EUR
10+7.93 EUR
50+6.26 EUR
100+5.72 EUR
500+4.78 EUR
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IPA60R180C7XKSA1 Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d
IPA60R180C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO220-FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 149 Stücke:
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AnzahlPrivatkunde
4+5.51 EUR
50+2.94 EUR
100+2.82 EUR
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IPA65R045C7XKSA1 INFNS29944-1.pdf?t.download=true&u=5oefqw
IPA65R045C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 18A TO220-FP
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 8 Stücke:
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AnzahlPrivatkunde
1+22.91 EUR
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IPA65R065C7XKSA1 Infineon-IPA65R065C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be66fa89001a
IPA65R065C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 850µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.27 EUR
50+8.28 EUR
100+7.6 EUR
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IPA65R095C7XKSA1 Infineon-IPA65R095C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be754266003b
IPA65R095C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 12A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.82 EUR
50+5 EUR
100+4.69 EUR
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IPA65R125C7XKSA1 Infineon-IPA65R125C7-DS-v02_00-en.pdf?fileId=db3a304343be53c50143be863f5d005b
IPA65R125C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 440µA
Power Dissipation (Max): 32W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.35 EUR
50+4.31 EUR
100+4.08 EUR
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IPA65R225C7XKSA1 Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63
IPA65R225C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO220-FP
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 4V @ 240µA
Power Dissipation (Max): 29W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 Infineon-IPA80R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c776020e1e3b
IPA80R1K0CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Produkt ist nicht verfügbar
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IPB015N08N5ATMA1 Infineon-IPB015N08N5-DS-v02_01-EN.pdf?fileId=5546d4624a75e5f1014aca3499a41e96
IPB015N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 279µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.63 EUR
Mindestbestellmenge: 1000 Stücke
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IPB020N08N5ATMA1 Infineon-IPB020N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac98fb6291b4d
IPB020N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 208µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.02 EUR
3000+2.75 EUR
Mindestbestellmenge: 1000 Stücke
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IPB031N08N5ATMA1 Infineon-IPB031N08N5-DS-v02_00-EN.pdf?fileId=5546d4624a75e5f1014ac9cfdf5b1b81
IPB031N08N5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.27 EUR
3000+2.05 EUR
Mindestbestellmenge: 1000 Stücke
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IPB065N10N3GATMA1 Infineon-IPB065N10N3+G-DS-v02_00-EN.pdf?fileId=5546d4624b0b249c014b7983a7000f6f
IPB065N10N3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Produkt ist nicht verfügbar
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IPB120N03S4L03ATMA1 Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466
IPB120N03S4L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB120N04S404ATMA1 Infineon-IPB120N04S4-04-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3ce545c062f
IPB120N04S404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB140N08S404ATMA1 IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b
IPB140N08S404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 140A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 161W (Tc)
Produkt ist nicht verfügbar
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IPB160N08S403ATMA1 IPB160N08S4-03.pdf
IPB160N08S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 160A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB180N04S4LH0ATMA1 Infineon-IPB180N04S4LH010-DS-v01_00-en.pdf?fileId=5546d461464245d3014670cf90ea6434
IPB180N04S4LH0ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24440 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB180N08S402ATMA1 IPB180N08S4-02-Data-Sheet-10-Infineon.pdf?fileId=5546d4614755559a01475d701b54019c
IPB180N08S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 100A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 4V @ 220µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11550 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
IPB180N10S402ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB240N03S4LR9ATMA1 Infineon-IPB240N03S4L-R9-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a36984b60479
IPB240N03S4LR9ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB60R199CPAATMA1 fundamentals-of-power-semiconductors
IPB60R199CPAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 9.9A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPB60R330P6ATMA1 INFNS28173-1.pdf?t.download=true&u=5oefqw
IPB60R330P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 4.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 370µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600P6ATMA1 Infineon-IPB60R600P6-DS-v02_02-EN.pdf?fileId=5546d4624e765da5014edfa8aa5852d5
IPB60R600P6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Produkt ist nicht verfügbar
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IPB65R065C7ATMA1 Infineon-IPB65R065C7-DS-v02_00-en.pdf?fileId=db3a304341e0aed001420483e2ab1788
IPB65R065C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Power Dissipation (Max): 171W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB65R095C7ATMA1 Infineon-IPB65R095C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142092311ad00e6
IPB65R095C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPB65R110CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Power Dissipation (Max): 277.8W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+5.03 EUR
Mindestbestellmenge: 1000 Stücke
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IPB65R125C7ATMA1 Infineon-IPB65R125C7-DS-v02_00-en.pdf?fileId=db3a30434208e5fd0142094d378001a5
IPB65R125C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 18A D2PAK
Power Dissipation (Max): 101W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 440µA
Produkt ist nicht verfügbar
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IPB65R190C7ATMA1 Infineon-IPB65R190C7-DS-v02_01-en.pdf?fileId=db3a30434208e5fd0142095ff92801d1
IPB65R190C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.7A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 290µA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 400 V
Produkt ist nicht verfügbar
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IPB65R280E6ATMA1 Infineon-IPB65R280E6-DS-v02_00-en.pdf?fileId=db3a30432ea425a4012ede130fa67128
IPB65R280E6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 13.8A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Produkt ist nicht verfügbar
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IPB80N08S406ATMA1 IPx80N08S4-06.pdf
IPB80N08S406ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IPB80P04P405ATMA1 Infineon-IPP_B_I80P04P4_05-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f7833bcf12e3a
Hersteller: Infineon Technologies
Description: MOSFET P-CH TO263-3
Produkt ist nicht verfügbar
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IPB80P04P4L04ATMA1 Infineon-IPP_B_I80P04P4L_04-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f783241fb2e2a
IPB80P04P4L04ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB80P04P4L06ATMA1 Infineon-IPP_B_I80P04P4L-DS-06-v01_00-en.pdf?fileId=db3a30432f69f146012f782f18402e14
IPB80P04P4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 80A TO263-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 150µA
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPB80R290C3AATMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MOSFET P-CH TO263-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPC100N04S402ATMA1 IPC100N04S4-02.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A 8TDSON
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 150W (Tc)
Produkt ist nicht verfügbar
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IPC60N04S406ATMA1 IPC60N04S4-06.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 60A TDSON-8-23
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 30µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IPC60N04S4L06ATMA1 IPC60N04S4L-06.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 60A TDSON-8-23
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Power Dissipation (Max): 63W (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPC80N04S403ATMA1 IPC80N04S4-03.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TDSON-8-23
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TDSON-8-23
Vgs(th) (Max) @ Id: 4V @ 60µA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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IPD40N03S4L08ATMA1 Infineon-IPD40N03S4L_08-DS-v01_01-en.pdf?fileId=db3a30431ddc9372011e2b3ad6c04d78
IPD40N03S4L08ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.67 EUR
Mindestbestellmenge: 2500 Stücke
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IPD60N10S4L12ATMA1 Infineon-IPD60N10S4L_12-DS-v01_00-en.pdf?fileId=db3a3043372d5cc801374ffd51cd0505
IPD60N10S4L12ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 60A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 46µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3170 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD65R650CEATMA1 dgdl?folderId=5546d4624c9e0f0e014c9e8dfd1515f0&fileId=5546d4624d6fc3d5014d7220d45a1844
IPD65R650CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IPD65R950C6ATMA1 fundamentals-of-power-semiconductors
IPD65R950C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
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IPD70P04P409ATMA1 Infineon-IPD70P04P4_09-DS-v01_00-en.pdf?fileId=db3a304329a0f6ee0129db9c0b0b5c51
IPD70P04P409ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 73A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-313
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD80R1K0CEATMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPD80R1K0CEATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO252-3
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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