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IR2132SPBF IR2132SPBF Infineon Technologies ir2130.pdf?fileId=5546d462533600a4015355c8757d169a description Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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2+17.15 EUR
10+13.29 EUR
25+12.33 EUR
100+11.26 EUR
250+10.76 EUR
500+10.45 EUR
1000+10.2 EUR
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IR2135SPBF IR2135SPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2153SPBF IR2153SPBF Infineon Technologies IR2153_D_S_PbF_5-21-20.pdf description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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10+4.16 EUR
95+3.44 EUR
190+3.3 EUR
285+3.22 EUR
570+3.12 EUR
1045+3.03 EUR
2565+2.94 EUR
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IR2156SPBF IR2156SPBF Infineon Technologies ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 description Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IR2175SPBF IR2175SPBF Infineon Technologies IRSDS17958-1.pdf?t.download=true&u=5oefqw Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
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10+9.16 EUR
95+7.75 EUR
190+7.46 EUR
285+7.32 EUR
570+7.1 EUR
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IR21814SPBF IR21814SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2181SPBF IR2181SPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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190+6.16 EUR
285+6.03 EUR
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IR21834SPBF IR21834SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2183SPBF IR2183SPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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190+5.62 EUR
285+5.51 EUR
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IR2301SPBF IR2301SPBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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10+3.27 EUR
25+2.99 EUR
100+2.68 EUR
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IR3088AMTRPBF IR3088AMTRPBF Infineon Technologies IR3088APbF.pdf Description: IC XPHASE W/FAULT DET 20L-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
Produkt ist nicht verfügbar
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IR4427SPBF IR4427SPBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IRF1010ESTRLPBF IRF1010ESTRLPBF Infineon Technologies Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1010NSTRLPBF IRF1010NSTRLPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1010NSTRRPBF IRF1010NSTRRPBF Infineon Technologies Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638 Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
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IRF1310NSTRLPBF IRF1310NSTRLPBF Infineon Technologies irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0 Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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IRF1404STRLPBF IRF1404STRLPBF Infineon Technologies infineon-irf1404l-datasheet-en.pdf Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
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IRF2807STRLPBF IRF2807STRLPBF Infineon Technologies irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4 Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205STRRPBF IRF3205STRRPBF Infineon Technologies irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205ZSTRRPBF IRF3205ZSTRRPBF Infineon Technologies irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3415STRLPBF IRF3415STRLPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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IRF3415STRRPBF IRF3415STRRPBF Infineon Technologies irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3704STRLPBF IRF3704STRLPBF Infineon Technologies IRF3704%28S%2CL%29PbF.pdf Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3710STRLPBF IRF3710STRLPBF Infineon Technologies infineon-irf3710s-datasheet-en.pdf Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
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IRF3710STRRPBF IRF3710STRRPBF Infineon Technologies irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949 Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3711STRLPBF IRF3711STRLPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3711STRRPBF IRF3711STRRPBF Infineon Technologies irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954 Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3717PBF IRF3717PBF Infineon Technologies IRF3717PbF.pdf description Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
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IRF5305STRLPBF IRF5305STRLPBF Infineon Technologies infineon-irf5305s-datasheet-en.pdf description Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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2400+1.8 EUR
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IRF530NSTRLPBF IRF530NSTRLPBF Infineon Technologies infineon-irf530ns-datasheet-en.pdf description Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
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IRF530NSTRRPBF IRF530NSTRRPBF Infineon Technologies irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
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IRF540NSTRLPBF IRF540NSTRLPBF Infineon Technologies infineon-irf540ns-datasheet-en.pdf Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
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2400+1.69 EUR
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IRF540NSTRRPBF IRF540NSTRRPBF Infineon Technologies irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3 description Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6215STRRPBF IRF6215STRRPBF Infineon Technologies irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2 Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630NSTRLPBF IRF630NSTRLPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1600 Stücke
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IRF630NSTRRPBF IRF630NSTRRPBF Infineon Technologies irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6 Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
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IRF640NSTRLPBF IRF640NSTRLPBF Infineon Technologies infineon-irf640n-datasheet-en.pdf Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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800+1.33 EUR
2400+1.17 EUR
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IRF7101PBF IRF7101PBF Infineon Technologies infineon-irf7101-datasheet-en.pdf description Description: MOSFET 2N-CH 20V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7103PBF IRF7103PBF Infineon Technologies infineon-irf7103-datasheet-en.pdf Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7104PBF IRF7104PBF Infineon Technologies infineon-irf7104-datasheet-en.pdf?fileId=5546d462533600a4015355f111081ace description Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7105PBF IRF7105PBF Infineon Technologies infineon-irf7105-datasheet-en.pdf description Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7205PBF IRF7205PBF Infineon Technologies irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2 description Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7207PBF IRF7207PBF Infineon Technologies IR_PartNumberingSystem.pdf description Description: MOSFET P-CH 20V 5.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Produkt ist nicht verfügbar
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IRF7233PBF IRF7233PBF Infineon Technologies IRF7233PbF.pdf Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7241PBF IRF7241PBF Infineon Technologies irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4 Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7301PBF IRF7301PBF Infineon Technologies irf7301pbf.pdf?fileId=5546d462533600a4015355f1b66c1af8 description Description: MOSFET 2N-CH 20V 5.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7303PBF IRF7303PBF Infineon Technologies irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc description Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7316PBF IRF7316PBF Infineon Technologies irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34 description Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7317PBF IRF7317PBF Infineon Technologies irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d description Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319PBF IRF7319PBF Infineon Technologies irf7319pbf.pdf?fileId=5546d462533600a4015355f5c82f1b41 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7322D1PBF IRF7322D1PBF Infineon Technologies IRF7322D1PbF.pdf Description: MOSFET P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 2.9A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324D1PBF IRF7324D1PBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET P-CH 20V 2.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Produkt ist nicht verfügbar
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IRF7325PBF IRF7325PBF Infineon Technologies RF7325PBF.pdf Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF7326D2TRPBF IRF7326D2TRPBF Infineon Technologies IRF7326D2PBF-Datasheet.pdf Description: MOSFET P-CH 30V 3.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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IRF7329PBF IRF7329PBF Infineon Technologies irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Description: MOSFET 2P-CH 12V 9.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF7331PBF IRF7331PBF Infineon Technologies IRF7331PbF.pdf description Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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IRF7341PBF IRF7341PBF Infineon Technologies infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63 Description: MOSFET 2N-CH 55V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7342PBF IRF7342PBF Infineon Technologies irf7342pbf.pdf?fileId=5546d462533600a4015355f665771b69 Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7343PBF IRF7343PBF Infineon Technologies irf7343pbf.pdf?fileId=5546d462533600a4015355f68c1a1b73 Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3800 Stücke
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IRF7353D1PBF IRF7353D1PBF Infineon Technologies IRF7353D1PBF.pdf Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Produkt ist nicht verfügbar
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IR2132SPBF description ir2130.pdf?fileId=5546d462533600a4015355c8757d169a
IR2132SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1821 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.15 EUR
10+13.29 EUR
25+12.33 EUR
100+11.26 EUR
250+10.76 EUR
500+10.45 EUR
1000+10.2 EUR
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IR2135SPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2135SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IR2153SPBF description IR2153_D_S_PbF_5-21-20.pdf
IR2153SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 3800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+4.16 EUR
95+3.44 EUR
190+3.3 EUR
285+3.22 EUR
570+3.12 EUR
1045+3.03 EUR
2565+2.94 EUR
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IR2156SPBF description ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
IR2156SPBF
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Discontinued at Digi-Key
Current - Supply: 10 mA
Produkt ist nicht verfügbar
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IR2175SPBF IRSDS17958-1.pdf?t.download=true&u=5oefqw
IR2175SPBF
Hersteller: Infineon Technologies
Description: IC CURRENT SENSE 0.5% 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Function: Current Sense
Voltage - Input: 9.5V ~ 20V
Current - Output: 20mA
Accuracy: ±0.5%
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: 8-SOIC
auf Bestellung 1070 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.9 EUR
10+9.16 EUR
95+7.75 EUR
190+7.46 EUR
285+7.32 EUR
570+7.1 EUR
1045+6.96 EUR
Mindestbestellmenge: 2 Stücke
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IR21814SPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
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IR2181SPBF description ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 5606 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10 EUR
10+7.63 EUR
95+6.4 EUR
190+6.16 EUR
285+6.03 EUR
570+5.85 EUR
1045+5.72 EUR
2565+5.57 EUR
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IR21834SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1980 Stücke
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IR2183SPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1188 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.15 EUR
10+6.97 EUR
95+5.84 EUR
190+5.62 EUR
285+5.51 EUR
570+5.34 EUR
1045+5.22 EUR
Mindestbestellmenge: 3 Stücke
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IR2301SPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.41 EUR
10+3.27 EUR
25+2.99 EUR
100+2.68 EUR
Mindestbestellmenge: 5 Stücke
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IR3088AMTRPBF IR3088APbF.pdf
IR3088AMTRPBF
Hersteller: Infineon Technologies
Description: IC XPHASE W/FAULT DET 20L-MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 20-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 125°C
Voltage - Supply: 8.4V ~ 14V
Applications: Processor
Current - Supply: 10mA
Supplier Device Package: 20-MLPQ (4x4)
Produkt ist nicht verfügbar
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IR4427SPBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.38 EUR
10+5.57 EUR
Mindestbestellmenge: 3 Stücke
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IRF1010ESTRLPBF Infineon-IRF1010ES-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee35a00063b
IRF1010ESTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 84A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1010NSTRLPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF1010NSTRRPBF Infineon-IRF1010NS-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc10158fee33da90638
IRF1010NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 85A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 43A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF1310NSTRLPBF irf1310nspbf.pdf?fileId=5546d462533600a4015355dab12918a0
IRF1310NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.8 EUR
2400+1.61 EUR
Mindestbestellmenge: 800 Stücke
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IRF1404STRLPBF infineon-irf1404l-datasheet-en.pdf
IRF1404STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 162A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 162A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF2807STRLPBF irf2807spbf.pdf?fileId=5546d462533600a4015355deafc518f4
IRF2807STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 82A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 43A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3820 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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IRF3205STRRPBF irf3205spbf.pdf?fileId=5546d462533600a4015355defac9190c
IRF3205STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3205ZSTRRPBF irf3205zpbf.pdf?fileId=5546d462533600a4015355df030c190f
IRF3205ZSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3415STRLPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.58 EUR
2400+1.4 EUR
Mindestbestellmenge: 800 Stücke
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IRF3415STRRPBF irf3415spbf.pdf?fileId=5546d462533600a4015355df28f8191b
IRF3415STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 43A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 22A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3704STRLPBF IRF3704%28S%2CL%29PbF.pdf
IRF3704STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 77A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1996 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3710STRLPBF infineon-irf3710s-datasheet-en.pdf
IRF3710STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
auf Bestellung 14400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.59 EUR
2400+2.32 EUR
Mindestbestellmenge: 800 Stücke
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IRF3710STRRPBF irf3710spbf.pdf?fileId=5546d462533600a4015355df9dff1949
IRF3710STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 57A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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IRF3711STRLPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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IRF3711STRRPBF irf3711pbf.pdf?fileId=5546d462533600a4015355dfbc571954
IRF3711STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 10 V
Produkt ist nicht verfügbar
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IRF3717PBF description IRF3717PbF.pdf
IRF3717PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 20A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.45V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 10 V
Produkt ist nicht verfügbar
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IRF5305STRLPBF description infineon-irf5305s-datasheet-en.pdf
IRF5305STRLPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 24800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+2.01 EUR
2400+1.8 EUR
Mindestbestellmenge: 800 Stücke
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IRF530NSTRLPBF description infineon-irf530ns-datasheet-en.pdf
IRF530NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
auf Bestellung 8800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.71 EUR
2400+1.52 EUR
Mindestbestellmenge: 800 Stücke
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IRF530NSTRRPBF irf530nspbf.pdf?fileId=5546d462533600a4015355e38eb4199c
IRF530NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 25 V
Produkt ist nicht verfügbar
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IRF540NSTRLPBF infineon-irf540ns-datasheet-en.pdf
IRF540NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
auf Bestellung 42400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.9 EUR
2400+1.69 EUR
Mindestbestellmenge: 800 Stücke
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IRF540NSTRRPBF description irf540nspbf.pdf?fileId=5546d462533600a4015355e3a72819a3
IRF540NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 33A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 16A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 25 V
Produkt ist nicht verfügbar
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IRF6215STRRPBF irf6215spbf.pdf?fileId=5546d462533600a4015355e454d819d2
IRF6215STRRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 150V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 6.6A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRF630NSTRLPBF irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1600 Stücke
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IRF630NSTRRPBF irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 5.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 575 pF @ 25 V
Produkt ist nicht verfügbar
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IRF640NSTRLPBF infineon-irf640n-datasheet-en.pdf
IRF640NSTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 48800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+1.33 EUR
2400+1.17 EUR
Mindestbestellmenge: 800 Stücke
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IRF7101PBF description infineon-irf7101-datasheet-en.pdf
IRF7101PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 3.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7103PBF infineon-irf7103-datasheet-en.pdf
IRF7103PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 50V 3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 25V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7104PBF description infineon-irf7104-datasheet-en.pdf?fileId=5546d462533600a4015355f111081ace
IRF7104PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7105PBF description infineon-irf7105-datasheet-en.pdf
IRF7105PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7205PBF description irf7205pbf.pdf?fileId=5546d462533600a4015355f15e771ae2
IRF7205PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 4.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7207PBF description IR_PartNumberingSystem.pdf
IRF7207PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 5.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 5.4A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Produkt ist nicht verfügbar
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IRF7233PBF IRF7233PbF.pdf
IRF7233PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Produkt ist nicht verfügbar
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IRF7241PBF irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4
IRF7241PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7301PBF description irf7301pbf.pdf?fileId=5546d462533600a4015355f1b66c1af8
IRF7301PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 5.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.2A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7303PBF description irf7303pbf.pdf?fileId=5546d462533600a4015355f1c70a1afc
IRF7303PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7316PBF description irf7316pbf.pdf?fileId=5546d462533600a4015355f5994e1b34
IRF7316PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 4.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 25V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7317PBF description irf7317pbf.pdf?fileId=5546d462533600a4015355f5b8de1b3d
IRF7317PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 20V 6.6A/5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7319PBF description irf7319pbf.pdf?fileId=5546d462533600a4015355f5c82f1b41
IRF7319PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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IRF7322D1PBF IRF7322D1PbF.pdf
IRF7322D1PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 2.9A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 780 pF @ 15 V
Produkt ist nicht verfügbar
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IRF7324D1PBF IR_PartNumberingSystem.pdf
IRF7324D1PBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 2.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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IRF7325PBF RF7325PBF.pdf
IRF7325PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
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IRF7326D2TRPBF IRF7326D2PBF-Datasheet.pdf
IRF7326D2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 3.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Produkt ist nicht verfügbar
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IRF7329PBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
IRF7329PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 12V 9.2A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 9.2A
Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
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IRF7331PBF description IRF7331PbF.pdf
IRF7331PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-SO
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IRF7341PBF infineon-irf7341-datasheet-en.pdf?fileId=5546d462533600a4015355f64f031b63
IRF7341PBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 55V 4.7A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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IRF7342PBF irf7342pbf.pdf?fileId=5546d462533600a4015355f665771b69
IRF7342PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 55V 3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 25V
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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IRF7343PBF irf7343pbf.pdf?fileId=5546d462533600a4015355f68c1a1b73
IRF7343PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 55V 4.7A/3.4A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.4A
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Mindestbestellmenge: 3800 Stücke
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IRF7353D1PBF IRF7353D1PBF.pdf
IRF7353D1PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5.8A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
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