Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149718) > Seite 48 nach 2496

Wählen Sie Seite:   [  << Vorherige Seite ]  1 43 44 45 46 47 48 49 50 51 52 53 249 498 747 996 1245 1494 1743 1992 2241 2490 2496  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRF7465TRPBF IRF7465TRPBF Infineon Technologies irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08 Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 1873 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
28+0.64 EUR
100+0.58 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1205TRPBF IRFR1205TRPBF Infineon Technologies irfr1205pbf.pdf?fileId=5546d462533600a40153562d17792047 Description: MOSFET N-CH 55V 44A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 9426 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.55 EUR
15+1.21 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5410TRPBF IRFR5410TRPBF Infineon Technologies irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107 description Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 21014 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
11+1.65 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807VD2TRPBF IRF7807VD2TRPBF Infineon Technologies IRF7807VD2PbF.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBF IRF7413ZTRPBF Infineon Technologies irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 description Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
22+0.81 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRF7422D2TRPBF IRF7422D2TRPBF Infineon Technologies IRF7422D2PbF.pdf Description: MOSFET P-CH 20V 4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7469TRPBF IRF7469TRPBF Infineon Technologies IRF7469TRPBF.PDF Description: MOSFET N-CH 40V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 1387 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
18+1 EUR
100+0.84 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807D2TRPBF IRF7807D2TRPBF Infineon Technologies IRF7807D2PbF.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807D1TRPBF IRF7807D1TRPBF Infineon Technologies IRF7807D1PbF.pdf Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRPBF IRFR3504ZTRPBF Infineon Technologies irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b Description: MOSFET N-CH 40V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.94 EUR
10+1.87 EUR
100+1.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF7809AVTRPBF IRF7809AVTRPBF Infineon Technologies irf7809avpbf.pdf?fileId=5546d462533600a40153560871781cec description Description: MOSFET N-CH 30V 13.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3707TRPBF IRFR3707TRPBF Infineon Technologies IRFR%28U%293707PbF.pdf Description: MOSFET N-CH 30V 61A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR13N20DTRPBF IRFR13N20DTRPBF Infineon Technologies irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f Description: MOSFET N-CH 200V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF IRF7424TRPBF Infineon Technologies irf7424pbf.pdf?fileId=5546d462533600a4015355fb0dab1bd8 Description: MOSFET P-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
auf Bestellung 10988 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.88 EUR
14+1.28 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
2000+0.67 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF IRF7473TRPBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 description Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.33 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2905ZTRPBF IRFR2905ZTRPBF Infineon Technologies irfr2905zpbf.pdf?fileId=5546d462533600a401535630e7222088 Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3852 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7833TRPBF IRLR7833TRPBF Infineon Technologies irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3 Description: MOSFET N-CH 30V 140A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805ATRPBF IRF7805ATRPBF Infineon Technologies irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0 Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3303TRPBF IRLR3303TRPBF Infineon Technologies IRLR,U3303PbF.pdf Description: MOSFET N-CH 30V 35A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF IRF7104TRPBF Infineon Technologies infineon-irf7104-datasheet-en.pdf description Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.01 EUR
14+1.26 EUR
100+0.77 EUR
500+0.65 EUR
1000+0.59 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRF7901D1TRPBF IRF7901D1TRPBF Infineon Technologies IRF7901D1PbF.pdf Description: MOSFET 2N-CH 30V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7493TRPBF IRF7493TRPBF Infineon Technologies irf7493pbf.pdf?fileId=5546d462533600a4015355ffcce21c40 description Description: MOSFET N-CH 80V 9.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
auf Bestellung 6615 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9953TRPBF IRF9953TRPBF Infineon Technologies irf9953pbf.pdf?fileId=5546d462533600a40153561208041dd7 Description: MOSFET 2P-CH 30V 2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7325TRPBF IRF7325TRPBF Infineon Technologies RF7325PBF.pdf Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRPBF IRFR2405TRPBF Infineon Technologies irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079 description Description: MOSFET N-CH 55V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
auf Bestellung 54208 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
12+1.57 EUR
100+1.13 EUR
500+1.01 EUR
1000+1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF IRFR2407TRPBF Infineon Technologies irfr2407.pdf Description: MOSFET N-CH 75V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 3913 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.6 EUR
10+1.85 EUR
100+1.3 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7471TRPBF IRF7471TRPBF Infineon Technologies IRF7471PbF.pdf Description: MOSFET N-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF IRF7451TRPBF Infineon Technologies IRSDS17406-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 150V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
auf Bestellung 8333 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.31 EUR
100+0.94 EUR
500+0.9 EUR
1000+0.87 EUR
2000+0.82 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRF7466TRPBF IRF7466TRPBF Infineon Technologies IRF7466PbF.pdf Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF IRFR4104TRPBF Infineon Technologies irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6 Description: MOSFET N-CH 40V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
auf Bestellung 3768 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
14+1.26 EUR
100+1.08 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF7458TRPBF IRF7458TRPBF Infineon Technologies irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
auf Bestellung 8021 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.78 EUR
13+1.37 EUR
100+1.11 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF7457TRPBF IRF7457TRPBF Infineon Technologies irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8 Description: MOSFET N-CH 20V 15A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF IRF7241TRPBF Infineon Technologies irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4 description Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
19+0.96 EUR
100+0.68 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IR4428STRPBF IR4428STRPBF Infineon Technologies 501457.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Driven Configuration: Low-Side
Number of Drivers: 2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7403TRPBF IRF7403TRPBF Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF IR4427STRPBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 127214 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+1.96 EUR
25+1.78 EUR
100+1.59 EUR
250+1.49 EUR
500+1.44 EUR
1000+1.39 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7822TRPBF IRF7822TRPBF Infineon Technologies IRF7822PbF.pdf Description: MOSFET N-CH 30V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF IRF7389TRPBF Infineon Technologies irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15231 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.71 EUR
1000+0.64 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2301STRPBF IR2301STRPBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3131 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SI4410DYTRPBF SI4410DYTRPBF Infineon Technologies si4410dypbf.pdf?fileId=5546d462533600a4015356846a03297f Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7233TRPBF IRF7233TRPBF Infineon Technologies IRF7233PbF.pdf Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324TRPBF IRF7324TRPBF Infineon Technologies irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 6351 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
11+1.69 EUR
100+1.14 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8503TRPBF IRLR8503TRPBF Infineon Technologies irlr8503pbf.pdf Description: MOSFET N-CH 30V 44A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF IRF7319TRPBF Infineon Technologies irf7319pbf.pdf?fileId=5546d462533600a4015355f5c82f1b41 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 9604 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
11+1.65 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7379TRPBF IRF7379TRPBF Infineon Technologies irf7379pbf.pdf?fileId=5546d462533600a4015355f9cbf21b85 Description: MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2156STRPBF IR2156STRPBF Infineon Technologies ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8 Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Active
Current - Supply: 10 mA
auf Bestellung 8344 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.27 EUR
10+2.42 EUR
25+2.21 EUR
100+1.97 EUR
250+1.86 EUR
500+1.79 EUR
1000+1.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SI4420DYTRPBF SI4420DYTRPBF Infineon Technologies si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981 Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21531STRPBF IR21531STRPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12688 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
10+1.99 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2117STRPBF IR2117STRPBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2022 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.99 EUR
10+2.21 EUR
25+2.01 EUR
100+1.8 EUR
250+1.69 EUR
500+1.63 EUR
1000+1.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2011STRPBF IR2011STRPBF Infineon Technologies ir2011.pdf?fileId=5546d462533600a4015355c49b831663 description Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1751 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
10+2.03 EUR
25+1.85 EUR
100+1.64 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2103STRPBF IR2103STRPBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5269 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF IR2101STRPBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8525 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2108STRPBF IR2108STRPBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 description Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5046 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR21064STRPBF IR21064STRPBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10927 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+2.19 EUR
25+2 EUR
100+1.78 EUR
250+1.68 EUR
500+1.62 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2181STRPBF IR2181STRPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7393 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.5 EUR
25+2.29 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2183STRPBF IR2183STRPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9837 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.38 EUR
10+2.5 EUR
25+2.29 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2112STRPBF IR2112STRPBF Infineon Technologies ir2112.pdf?fileId=5546d462533600a4015355c81cb71685 Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1159 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.28 EUR
10+3.18 EUR
25+2.91 EUR
100+2.61 EUR
250+2.47 EUR
500+2.39 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR21834STRPBF IR21834STRPBF Infineon Technologies ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1 Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8674 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR21271STRPBF IR21271STRPBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 22203 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2113STRPBF IR2113STRPBF Infineon Technologies Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10577 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRF7465TRPBF irf7465pbf.pdf?fileId=5546d462533600a4015355fef2681c08
IRF7465TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 1.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
auf Bestellung 1873 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
28+0.64 EUR
100+0.58 EUR
500+0.57 EUR
1000+0.52 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRFR1205TRPBF irfr1205pbf.pdf?fileId=5546d462533600a40153562d17792047
IRFR1205TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 26A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 9426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
15+1.21 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.7 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFR5410TRPBF description irfr5410pbf.pdf?fileId=5546d462533600a4015356356f622107
IRFR5410TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 205mOhm @ 7.8A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 25 V
auf Bestellung 21014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
11+1.65 EUR
100+1.12 EUR
500+0.89 EUR
1000+0.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807VD2TRPBF IRF7807VD2PbF.pdf
IRF7807VD2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7413ZTRPBF description irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
IRF7413ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
auf Bestellung 902 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
22+0.81 EUR
100+0.55 EUR
500+0.42 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRF7422D2TRPBF IRF7422D2PbF.pdf
IRF7422D2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7469TRPBF IRF7469TRPBF.PDF
IRF7469TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 1387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
18+1 EUR
100+0.84 EUR
500+0.78 EUR
1000+0.71 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807D2TRPBF IRF7807D2PbF.pdf
IRF7807D2TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7807D1TRPBF IRF7807D1PbF.pdf
IRF7807D1TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3504ZTRPBF irfr3504zpbf.pdf?fileId=5546d462533600a4015356311d09209b
IRFR3504ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 42A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
auf Bestellung 108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+1.87 EUR
100+1.27 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IRF7809AVTRPBF description irf7809avpbf.pdf?fileId=5546d462533600a40153560871781cec
IRF7809AVTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3780 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR3707TRPBF IRFR%28U%293707PbF.pdf
IRFR3707TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 61A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 87W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR13N20DTRPBF irfr13n20dpbf.pdf?fileId=5546d462533600a40153562d59d9205f
IRFR13N20DTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 13A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7424TRPBF irf7424pbf.pdf?fileId=5546d462533600a4015355fb0dab1bd8
IRF7424TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 25 V
auf Bestellung 10988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.88 EUR
14+1.28 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
2000+0.67 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF7473TRPBF description irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.33 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2905ZTRPBF irfr2905zpbf.pdf?fileId=5546d462533600a401535630e7222088
IRFR2905ZTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.59 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRLR7833TRPBF irlr7833pbf.pdf?fileId=5546d462533600a40153566dd6b626d3
IRLR7833TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 140A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7805ATRPBF irf7805pbf.pdf?fileId=5546d462533600a401535607ccc41cc0
IRF7805ATRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 7A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLR3303TRPBF IRLR,U3303PbF.pdf
IRLR3303TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 35A DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7104TRPBF description infineon-irf7104-datasheet-en.pdf
IRF7104TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
auf Bestellung 4806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.26 EUR
100+0.77 EUR
500+0.65 EUR
1000+0.59 EUR
2000+0.55 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IRF7901D1TRPBF IRF7901D1PbF.pdf
IRF7901D1TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7493TRPBF description irf7493pbf.pdf?fileId=5546d462533600a4015355ffcce21c40
IRF7493TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 9.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5.6A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
auf Bestellung 6615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRF9953TRPBF irf9953pbf.pdf?fileId=5546d462533600a40153561208041dd7
IRF9953TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 2.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7325TRPBF RF7325PBF.pdf
IRF7325TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 12V 7.8A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 7.8A
Input Capacitance (Ciss) (Max) @ Vds: 2020pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2405TRPBF description irfr2405pbf.pdf?fileId=5546d462533600a40153562da91b2079
IRFR2405TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 56A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 34A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 25 V
auf Bestellung 54208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.57 EUR
100+1.13 EUR
500+1.01 EUR
1000+1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRFR2407TRPBF irfr2407.pdf
IRFR2407TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 25A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 3913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.6 EUR
10+1.85 EUR
100+1.3 EUR
500+1.07 EUR
1000+1.01 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7471TRPBF IRF7471PbF.pdf
IRF7471TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2820 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7451TRPBF IRSDS17406-1.pdf?t.download=true&u=5oefqw
IRF7451TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
auf Bestellung 8333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.31 EUR
100+0.94 EUR
500+0.9 EUR
1000+0.87 EUR
2000+0.82 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRF7466TRPBF IRF7466PbF.pdf
IRF7466TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 11A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRPBF irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6
IRFR4104TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
auf Bestellung 3768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
14+1.26 EUR
100+1.08 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IRF7458TRPBF irf7458pbf.pdf?fileId=5546d462533600a4015355fecb231bfe
IRF7458TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14A, 16V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V, 16V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
auf Bestellung 8021 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
13+1.37 EUR
100+1.11 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF7457TRPBF irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8
IRF7457TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 15A 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7241TRPBF description irf7241pbf.pdf?fileId=5546d462533600a4015355f1a5de1af4
IRF7241TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 6.2A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 6.2A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.96 EUR
100+0.68 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IR4428STRPBF 501457.pdf
IR4428STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Voltage - Supply: 6V ~ 20V
Input Type: Inverting, Non-Inverting
Supplier Device Package: 8-SOIC
Driven Configuration: Low-Side
Number of Drivers: 2
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7403TRPBF irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IR4427STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 127214 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.96 EUR
25+1.78 EUR
100+1.59 EUR
250+1.49 EUR
500+1.44 EUR
1000+1.39 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7822TRPBF IRF7822PbF.pdf
IRF7822TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7389TRPBF description irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90
IRF7389TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 15231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.71 EUR
1000+0.64 EUR
2000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2301STRPBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SI4410DYTRPBF si4410dypbf.pdf?fileId=5546d462533600a4015356846a03297f
SI4410DYTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7233TRPBF IRF7233PbF.pdf
IRF7233TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 9.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7324TRPBF irf7324pbf.pdf?fileId=5546d462533600a4015355f5f0861b4b
IRF7324TRPBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 6351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.69 EUR
100+1.14 EUR
500+0.9 EUR
1000+0.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRLR8503TRPBF irlr8503pbf.pdf
IRLR8503TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 44A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7319TRPBF description irf7319pbf.pdf?fileId=5546d462533600a4015355f5c82f1b41
IRF7319TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 9604 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.65 EUR
100+1.1 EUR
500+0.87 EUR
1000+0.8 EUR
2000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IRF7379TRPBF irf7379pbf.pdf?fileId=5546d462533600a4015355f9cbf21b85
IRF7379TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 5.8A/4.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2156STRPBF ir2156.pdf?fileId=5546d462533600a4015355c8eb7116b8
IR2156STRPBF
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 44KHZ 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 36kHz ~ 44kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 14-SOIC
Dimming: No
Part Status: Active
Current - Supply: 10 mA
auf Bestellung 8344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.42 EUR
25+2.21 EUR
100+1.97 EUR
250+1.86 EUR
500+1.79 EUR
1000+1.74 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SI4420DYTRPBF si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981
SI4420DYTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
10+1.99 EUR
25+1.81 EUR
100+1.61 EUR
250+1.52 EUR
500+1.46 EUR
1000+1.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2117STRPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2117STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+2.21 EUR
25+2.01 EUR
100+1.8 EUR
250+1.69 EUR
500+1.63 EUR
1000+1.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2011STRPBF description ir2011.pdf?fileId=5546d462533600a4015355c49b831663
IR2011STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 35ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.7V, 2.2V
Current - Peak Output (Source, Sink): 1A, 1A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+2.03 EUR
25+1.85 EUR
100+1.64 EUR
250+1.55 EUR
500+1.49 EUR
1000+1.44 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IR2103STRPBF description ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2101STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR2108STRPBF description ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR2108STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5046 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
12+1.52 EUR
25+1.38 EUR
100+1.22 EUR
250+1.15 EUR
500+1.1 EUR
1000+1.07 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
IR21064STRPBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10927 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.19 EUR
25+2 EUR
100+1.78 EUR
250+1.68 EUR
500+1.62 EUR
1000+1.57 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7393 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.5 EUR
25+2.29 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2183STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR2183STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 9837 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.38 EUR
10+2.5 EUR
25+2.29 EUR
100+2.04 EUR
250+1.93 EUR
500+1.86 EUR
1000+1.8 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR2112STRPBF ir2112.pdf?fileId=5546d462533600a4015355c81cb71685
IR2112STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1159 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
10+3.18 EUR
25+2.91 EUR
100+2.61 EUR
250+2.47 EUR
500+2.39 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR21834STRPBF ir2183.pdf?fileId=5546d462533600a4015355c9490e16d1
IR21834STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 8674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR21271STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 9V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 22203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.76 EUR
25+2.52 EUR
100+2.26 EUR
250+2.13 EUR
500+2.06 EUR
1000+2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IR2113STRPBF Infineon-IR2110-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a4015355c80333167e&redirId=119801
IR2113STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-SOIC
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 10577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.47 EUR
25+3.18 EUR
100+2.86 EUR
250+2.71 EUR
500+2.61 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 43 44 45 46 47 48 49 50 51 52 53 249 498 747 996 1245 1494 1743 1992 2241 2490 2496  [ Nächste Seite >> ]