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2N3637UB 2N3637UB Microchip Technology 8968-lds-0156-datasheet Description: TRANS PNP 175V 1A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
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2N6193 2N6193 Microchip Technology 6106-2n6193-datasheet Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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2N6317 2N6317 Microchip Technology 125208-lds-0283-datasheet Description: TRANS PNP 60V 7A TO-213AA
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 90 W
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S3480 S3480 Microchip Technology 8542-coe-23-datasheet Description: DIODE GEN PURP 800V 45A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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SBR60100 SBR60100 Microchip Technology Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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SBR6030L SBR6030L Microchip Technology 10320-msc1520-datasheet Description: DIODE SCHOTTKY 30V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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UES1002 UES1002 Microchip Technology 11535-wt2-61-datasheet Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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UES1102SM UES1102SM Microchip Technology UES1102SM_Web.pdf Description: DIODE GEN PURP 100V 2.5A A-MELF
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UES1103 UES1103 Microchip Technology 11536-wt2-63-datasheet Description: DIODE STANDARD 150V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1103SM UES1103SM Microchip Technology Description: DIODE GEN PURP 150V 2.5A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
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UES1104 UES1104 Microchip Technology 11537-wt2-65-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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UES1106 UES1106 Microchip Technology 11537-wt2-65-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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UES1303 UES1303 Microchip Technology 11538-wt2-68-datasheet Description: DIODE GEN PURP 150V 6A AXIAL
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UES706HR2 UES706HR2 Microchip Technology 11292-ues704-6-datasheet Description: DIODE GEN PURP 400V 20A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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UFR3020 UFR3020 Microchip Technology Description: DIODE STANDARD 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
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CDLL5246BE3 Microchip Technology Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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CDLL5312 CDLL5312 Microchip Technology 5849-1n5283ur-1n5314ur-datasheet Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
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JAN1N3174 JAN1N3174 Microchip Technology 8953-lds-0140-pdf Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
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JAN1N3595-1 JAN1N3595-1 Microchip Technology 5794-1n3595-1-datasheet Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
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JAN1N4125-1 JAN1N4125-1 Microchip Technology 129734-lds-0245-2-datasheet Description: DIODE ZENER 47V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
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JAN1N4150UR-1 JAN1N4150UR-1 Microchip Technology 5808-1n4150ur-1-datasheet Description: DIODE STANDARD 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
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JAN1N4481 JAN1N4481 Microchip Technology 1N4460-1N4496.1N6485-1N6491.pdf Description: DIODE ZENER 47V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
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JAN1N5283-1 JAN1N5283-1 Microchip Technology 8970-lds-0159-pdf Description: DIODE CUR REG 100V 242UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 242µA
Voltage - Limiting (Max): 1V
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
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JAN1N5554US JAN1N5554US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 1KV 5A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
Produkt ist nicht verfügbar
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JAN1N5615US JAN1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5711-1 JAN1N5711-1 Microchip Technology 8865-lds-0040-datasheet Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JAN1N5711UR-1 JAN1N5711UR-1 Microchip Technology 131890-lds-0040-1-datasheet Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
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JAN1N5819UR-1 JAN1N5819UR-1 Microchip Technology 131895-lds-0301-1-datasheet Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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JAN1N5822 JAN1N5822 Microchip Technology 131997-lds-0303 Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
Produkt ist nicht verfügbar
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JAN1N6490 JAN1N6490 Microchip Technology 122691-lds-0183-datasheet Description: DIODE ZENER 5.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/406
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JAN1N750A-1 JAN1N750A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N751A-1 JAN1N751A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N752A-1 JAN1N752A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/127
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JAN1N754A-1 JAN1N754A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/127
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JAN1N758A-1 JAN1N758A-1 Microchip Technology 131821-lds-0288-datasheet Description: DIODE ZENER 10V 500MW DO35
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JAN1N758AUR-1 JAN1N758AUR-1 Microchip Technology 131822-lds-0288-1-datasheet Description: DIODE ZENER 10V 500MW DO213AA
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JAN1N759A-1 JAN1N759A-1 Microchip Technology 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
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JAN1N914 JAN1N914 Microchip Technology 125209-lds-0279-datasheet Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
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JAN1N944B-1 JAN1N944B-1 Microchip Technology 124507-lds-0222-datasheet Description: DIODE ZENER 11.7V 500MW DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Qualification: MIL-PRF-19500/157
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JAN1N965B-1 JAN1N965B-1 Microchip Technology 1N957B-1-1N992B-1%28e3%29.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Grade: Military
Qualification: MIL-PRF-19500/117
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JAN2N1893 JAN2N1893 Microchip Technology 6141-2n720a-datasheet Description: TRANS NPN 80V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/182
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JAN2N2945A JAN2N2945A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 20V 0.1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/382
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JAN2N6299 JAN2N6299 Microchip Technology 132306-lds-0310-datasheet Description: TRANS PNP DARL 80V 8A TO213AA
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JANS1N4109UR-1 JANS1N4109UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 15V 500MW DO213AA
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JANS1N4467US JANS1N4467US Microchip Technology 1N4460US-1N4496US.1N6485US-1NN6491US.pdf Description: DIODE ZENER 12V 1.5W D5A
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANS1N4618UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: MIL-PRF-19500/435
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JANS1N4627UR-1 JANS1N4627UR-1 Microchip Technology 5801-lds-0245-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
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JANS1N4962US JANS1N4962US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 15V 5W D5B
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JANS1N5418 JANS1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
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JANS1N5819-1 JANS1N5819-1 Microchip Technology 131894-lds-0301-datasheet Description: DIODE SCHOTTKY 45V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
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JANS1N6314US JANS1N6314US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 3.9V 5W MELF
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JANS1N6318US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 5.6V 500MW MELF
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JANS1N6320 JANS1N6320 Microchip Technology 10924-lds-0193-datasheet Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 6.8 V
Qualification: MIL-PRF-19500/533
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JANS1N6326US JANS1N6326US Microchip Technology 11083-lds-0193-1-datasheet Description: DIODE ZENER 12V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/533
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JANS2N2369AUB JANS2N2369AUB Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANS2N2907A JANS2N2907A Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANS2N5339U3 Microchip Technology Description: TRANS NPN 100V 5A SMD5
Packaging: Bulk
Package / Case: 5-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: SMD5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/560
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JANSR2N2222A JANSR2N2222A Microchip Technology 8868-lds-0042-pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
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JANSR2N2369AUB JANSR2N2369AUB Microchip Technology 2N2369AUB%2CUBC.pdf Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANTX1N1184 JANTX1N1184 Microchip Technology 8951-lds-0138-pdf Description: DIODE GEN PURP 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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2N3637UB 8968-lds-0156-datasheet
2N3637UB
Hersteller: Microchip Technology
Description: TRANS PNP 175V 1A UB
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 175 V
Power - Max: 1.5 W
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2N6193 6106-2n6193-datasheet
2N6193
Hersteller: Microchip Technology
Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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1+22.77 EUR
100+21.15 EUR
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2N6317 125208-lds-0283-datasheet
2N6317
Hersteller: Microchip Technology
Description: TRANS PNP 60V 7A TO-213AA
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.75A, 7A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 2.5A, 4V
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 90 W
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S3480 8542-coe-23-datasheet
S3480
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 45A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 45A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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SBR60100
SBR60100
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 100V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
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SBR6030L 10320-msc1520-datasheet
SBR6030L
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 30V 60A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Produkt ist nicht verfügbar
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UES1002 11535-wt2-61-datasheet
UES1002
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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Anzahl Preis
1+30.13 EUR
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UES1102SM UES1102SM_Web.pdf
UES1102SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2.5A A-MELF
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UES1103 11536-wt2-63-datasheet
UES1103
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 109 Stücke:
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1+33.37 EUR
100+30.98 EUR
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UES1103SM
UES1103SM
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A A-MELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A-MELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
auf Bestellung 131 Stücke:
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Anzahl Preis
1+33.14 EUR
100+30.81 EUR
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UES1104 11537-wt2-65-datasheet
UES1104
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 105 Stücke:
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Anzahl Preis
1+35.39 EUR
100+32.89 EUR
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UES1106 11537-wt2-65-datasheet
UES1106
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1+33.51 EUR
100+31.14 EUR
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UES1303 11538-wt2-68-datasheet
UES1303
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A AXIAL
auf Bestellung 38 Stücke:
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UES706HR2 11292-ues704-6-datasheet
UES706HR2
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 20A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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UFR3020
UFR3020
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 30A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 140pF @ 10V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 30 A
Current - Reverse Leakage @ Vr: 15 µA @ 200 V
Produkt ist nicht verfügbar
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CDLL5246BE3
Hersteller: Microchip Technology
Description: DIODE ZENER 16V DO-213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-213AA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Produkt ist nicht verfügbar
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CDLL5312 5849-1n5283ur-1n5314ur-datasheet
CDLL5312
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 4.29MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 4.29mA
Voltage - Limiting (Max): 2.6V
auf Bestellung 202 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.46 EUR
100+6.92 EUR
Mindestbestellmenge: 3
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JAN1N3174 8953-lds-0140-pdf
JAN1N3174
Hersteller: Microchip Technology
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 940 A
Current - Reverse Leakage @ Vr: 10 mA @ 1000 V
Qualification: MIL-PRF-19500/211
auf Bestellung 2 Stücke:
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Anzahl Preis
1+2315.83 EUR
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JAN1N3595-1 5794-1n3595-1-datasheet
JAN1N3595-1
Hersteller: Microchip Technology
Description: DIODE STD 125V 150MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
Grade: Military
Qualification: MIL-PRF-19500/241
Produkt ist nicht verfügbar
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JAN1N4125-1 129734-lds-0245-2-datasheet
JAN1N4125-1
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 35.8 V
auf Bestellung 45 Stücke:
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Anzahl Preis
3+7.29 EUR
Mindestbestellmenge: 3
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JAN1N4150UR-1 5808-1n4150ur-1-datasheet
JAN1N4150UR-1
Hersteller: Microchip Technology
Description: DIODE STANDARD 50V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/231
Produkt ist nicht verfügbar
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JAN1N4481 1N4460-1N4496.1N6485-1N6491.pdf
JAN1N4481
Hersteller: Microchip Technology
Description: DIODE ZENER 47V 1.5W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 50 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 50 nA @ 37.6 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
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JAN1N5283-1 8970-lds-0159-pdf
JAN1N5283-1
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 242UA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Grade: Military
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 242µA
Voltage - Limiting (Max): 1V
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
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JAN1N5554US 10966-sa7-43-datasheet
JAN1N5554US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 5A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
Produkt ist nicht verfügbar
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JAN1N5615US 11062-sd47a-datasheet
JAN1N5615US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/429
Produkt ist nicht verfügbar
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JAN1N5711-1 8865-lds-0040-datasheet
JAN1N5711-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 70 V
Grade: Military
Qualification: MIL-PRF-19500/444
Produkt ist nicht verfügbar
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JAN1N5711UR-1 131890-lds-0040-1-datasheet
JAN1N5711UR-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Produkt ist nicht verfügbar
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JAN1N5819UR-1 131895-lds-0301-1-datasheet
JAN1N5819UR-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.02 EUR
100+11.16 EUR
Mindestbestellmenge: 2
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JAN1N5822 131997-lds-0303
JAN1N5822
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 40V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Grade: Military
Qualification: MIL-PRF-19500/620
Produkt ist nicht verfügbar
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JAN1N6490 122691-lds-0183-datasheet
JAN1N6490
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1.5W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Grade: Military
Qualification: MIL-PRF-19500/406
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+112.83 EUR
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JAN1N750A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JAN1N750A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 4.7V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1.5 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N751A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JAN1N751A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N752A-1 131821-lds-0288-datasheet
JAN1N752A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N754A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JAN1N754A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: MIL-PRF-19500/127
auf Bestellung 355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
100+2.69 EUR
Mindestbestellmenge: 7
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JAN1N758A-1 131821-lds-0288-datasheet
JAN1N758A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO35
Produkt ist nicht verfügbar
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JAN1N758AUR-1 131822-lds-0288-1-datasheet
JAN1N758AUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AA
Produkt ist nicht verfügbar
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JAN1N759A-1 1N746A-1-1N759A-1%2C1N4370A-1-1N4372A-1.pdf
JAN1N759A-1
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/127
Produkt ist nicht verfügbar
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JAN1N914 125209-lds-0279-datasheet
JAN1N914
Hersteller: Microchip Technology
Description: DIODE STANDARD 75V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 2.8pF @ 1.5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Grade: Military
Qualification: MIL-PRF-19500/116
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
100+0.96 EUR
Mindestbestellmenge: 17
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JAN1N944B-1 124507-lds-0222-datasheet
JAN1N944B-1
Hersteller: Microchip Technology
Description: DIODE ZENER 11.7V 500MW DO35
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11.7 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 15 µA @ 8 V
Qualification: MIL-PRF-19500/157
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+276.14 EUR
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JAN1N965B-1 1N957B-1-1N992B-1%28e3%29.pdf
JAN1N965B-1
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Grade: Military
Qualification: MIL-PRF-19500/117
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
100+2.54 EUR
Mindestbestellmenge: 7
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JAN2N1893 6141-2n720a-datasheet
JAN2N1893
Hersteller: Microchip Technology
Description: TRANS NPN 80V 0.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/182
Produkt ist nicht verfügbar
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JAN2N2945A 124373-lds-0236-datasheet
JAN2N2945A
Hersteller: Microchip Technology
Description: TRANS PNP 20V 0.1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: TO-46
Grade: Military
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Qualification: MIL-PRF-19500/382
Produkt ist nicht verfügbar
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JAN2N6299 132306-lds-0310-datasheet
JAN2N6299
Hersteller: Microchip Technology
Description: TRANS PNP DARL 80V 8A TO213AA
Produkt ist nicht verfügbar
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JANS1N4109UR-1 5801-lds-0245-datasheet
JANS1N4109UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AA
Produkt ist nicht verfügbar
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JANS1N4467US 1N4460US-1N4496US.1N6485US-1NN6491US.pdf
JANS1N4467US
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 1.5W D5A
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 200 nA @ 9.6 V
Qualification: MIL-PRF-19500/406
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JANS1N4618UR-1 5801-lds-0245-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 2.7V 500MW DO213AA
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 1500 Ohms
Supplier Device Package: DO-213AA
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 1 V
Qualification: MIL-PRF-19500/435
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Anzahl Preis
1+194 EUR
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JANS1N4627UR-1 5801-lds-0245-datasheet
JANS1N4627UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Produkt ist nicht verfügbar
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JANS1N4962US 11059-sd44a-datasheet
JANS1N4962US
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 5W D5B
auf Bestellung 10 Stücke:
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JANS1N5418 124360-lds-0231-datasheet
JANS1N5418
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
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JANS1N5819-1 131894-lds-0301-datasheet
JANS1N5819-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 125°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: MIL-PRF-19500/586
Produkt ist nicht verfügbar
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JANS1N6314US 11083-lds-0193-1-datasheet
JANS1N6314US
Hersteller: Microchip Technology
Description: DIODE ZENER 3.9V 5W MELF
Produkt ist nicht verfügbar
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JANS1N6318US 11083-lds-0193-1-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW MELF
Produkt ist nicht verfügbar
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JANS1N6320 10924-lds-0193-datasheet
JANS1N6320
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 6.8 V
Qualification: MIL-PRF-19500/533
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Anzahl Preis
1+395.21 EUR
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JANS1N6326US 11083-lds-0193-1-datasheet
JANS1N6326US
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW MELF
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: B, SQ-MELF
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 9 V
Qualification: MIL-PRF-19500/533
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+203.81 EUR
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JANS2N2369AUB 8893-lds-0057-datasheet
JANS2N2369AUB
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANS2N2907A 8896-lds-0059-datasheet
JANS2N2907A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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JANS2N5339U3
Hersteller: Microchip Technology
Description: TRANS NPN 100V 5A SMD5
Packaging: Bulk
Package / Case: 5-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: SMD5
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/560
Produkt ist nicht verfügbar
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JANSR2N2222A 8868-lds-0042-pdf
JANSR2N2222A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANSR2N2369AUB 2N2369AUB%2CUBC.pdf
JANSR2N2369AUB
Hersteller: Microchip Technology
Description: TRANS NPN 15V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANTX1N1184 8951-lds-0138-pdf
JANTX1N1184
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 110 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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