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TN0604N3-G TN0604N3-G Microchip Technology TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 2026 Stücke:
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8+2.34 EUR
25+1.94 EUR
100+1.79 EUR
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TN0606N3-G TN0606N3-G Microchip Technology TN0606-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005935A.pdf Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 762 Stücke:
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11+1.6 EUR
25+1.35 EUR
100+1.21 EUR
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TN0610N3-G TN0610N3-G Microchip Technology TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1657 Stücke:
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9+2.15 EUR
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100+1.64 EUR
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TN0620N3-G TN0620N3-G Microchip Technology TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 417 Stücke:
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7+2.55 EUR
25+2.13 EUR
100+1.96 EUR
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TN0702N3-G TN0702N3-G Microchip Technology TN0702%20C080813.pdf Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
auf Bestellung 1260 Stücke:
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8+2.27 EUR
25+1.9 EUR
100+1.7 EUR
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TN2106N3-G TN2106N3-G Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 943 Stücke:
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16+1.11 EUR
25+0.91 EUR
100+0.84 EUR
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TN2540N3-G TN2540N3-G Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 68 Stücke:
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8+2.38 EUR
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TN2640N3-G TN2640N3-G Microchip Technology TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 167 Stücke:
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6+3.01 EUR
25+2.53 EUR
100+2.28 EUR
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TN5325N3-G TN5325N3-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1443 Stücke:
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16+1.13 EUR
25+0.92 EUR
100+0.85 EUR
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TP0604N3-G TP0604N3-G Microchip Technology TP0604-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005956A.pdf Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
auf Bestellung 684 Stücke:
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7+2.9 EUR
25+2.43 EUR
100+2.21 EUR
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TP0606N3-G TP0606N3-G Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1221 Stücke:
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10+1.87 EUR
25+1.53 EUR
100+1.39 EUR
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TP0620N3-G TP0620N3-G Microchip Technology TP0620-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005957A.pdf Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 775 Stücke:
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6+3.19 EUR
25+2.63 EUR
100+2.42 EUR
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TP2104N3-G TP2104N3-G Microchip Technology TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1130 Stücke:
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14+1.27 EUR
25+1.04 EUR
100+0.96 EUR
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TP2535N3-G TP2535N3-G Microchip Technology TP2535-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005971A.pdf Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 678 Stücke:
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6+3.04 EUR
25+2.55 EUR
100+2.3 EUR
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TP2540N3-G TP2540N3-G Microchip Technology TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 980 Stücke:
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6+2.99 EUR
25+2.5 EUR
100+2.27 EUR
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TP2635N3-G TP2635N3-G Microchip Technology TP2635-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005796A.pdf Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 344 Stücke:
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6+3.34 EUR
25+2.78 EUR
100+2.53 EUR
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TP2640N3-G TP2640N3-G Microchip Technology TP2640-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006372A.pdf Description: MOSFET P-CH 400V 180MA TO92-3
Produkt ist nicht verfügbar
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VN0104N3-G VN0104N3-G Microchip Technology VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2573 Stücke:
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15+1.18 EUR
25+0.97 EUR
100+0.89 EUR
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VN0106N3-G VN0106N3-G Microchip Technology VN0106%20C081913.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 15190 Stücke:
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15+1.23 EUR
25+1.04 EUR
100+0.92 EUR
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VN0109N3-G VN0109N3-G Microchip Technology VN0109-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005976A.pdf Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2844 Stücke:
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13+1.36 EUR
25+1.15 EUR
100+1.04 EUR
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VN0300L-G VN0300L-G Microchip Technology VN0300-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005977A.pdf Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 1704 Stücke:
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8+2.25 EUR
25+1.85 EUR
100+1.72 EUR
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VN0550N3-G VN0550N3-G Microchip Technology VN0550-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005978A.pdf Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
auf Bestellung 365 Stücke:
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VN0606L-G VN0606L-G Microchip Technology VN0606%20B081913.pdf Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 302 Stücke:
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VN0808L-G VN0808L-G Microchip Technology VN0808%20B081913.pdf Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 416 Stücke:
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VN10KN3-G VN10KN3-G Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 5658 Stücke:
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VN1206L-G VN1206L-G Microchip Technology VN1206%20B081913.pdf Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 862 Stücke:
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VN2106N3-G VN2106N3-G Microchip Technology vn2106.pdf Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2686 Stücke:
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VN2210N2 VN2210N2 Microchip Technology 20005559A.pdf Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 605 Stücke:
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VN2210N3-G VN2210N3-G Microchip Technology 20005559A.pdf Description: MOSFET N-CH 100V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 3212 Stücke:
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VN2222LL-G VN2222LL-G Microchip Technology VN2222LL%20B082013.pdf Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 6273 Stücke:
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VN2224N3-G VN2224N3-G Microchip Technology VN2224-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005988A.pdf Description: MOSFET N-CH 240V 540MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Tj)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 5mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 964 Stücke:
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VN2406L-G VN2406L-G Microchip Technology VN2406-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005990A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1114 Stücke:
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VN2410L-G VN2410L-G Microchip Technology VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 3075 Stücke:
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10+1.76 EUR
25+1.49 EUR
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VN2450N3-G VN2450N3-G Microchip Technology VN2450_2009.pdf Description: MOSFET N-CH 500V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 460 Stücke:
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8+2.45 EUR
25+2.06 EUR
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VN2460N3-G VN2460N3-G Microchip Technology VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 189 Stücke:
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8+2.24 EUR
25+1.87 EUR
100+1.69 EUR
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VN3205N3-G VN3205N3-G Microchip Technology VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf Description: MOSFET N-CH 50V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 834 Stücke:
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7+2.53 EUR
25+2.1 EUR
100+1.93 EUR
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VN4012L-G VN4012L-G Microchip Technology VN4012-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005997A.pdf Description: MOSFET N-CH 400V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 521 Stücke:
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6+3.22 EUR
25+2.67 EUR
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VP0104N3-G VP0104N3-G Microchip Technology VP0104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005999A.pdf Description: MOSFET P-CH 40V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1903 Stücke:
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11+1.71 EUR
25+1.44 EUR
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VP0106N3-G VP0106N3-G Microchip Technology VP0106-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006658A.pdf Description: MOSFET P-CH 60V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 105 Stücke:
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10+1.78 EUR
25+1.49 EUR
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VP0109N3-G VP0109N3-G Microchip Technology VP0109-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006001A.pdf Description: MOSFET P-CH 90V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1063 Stücke:
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10+1.76 EUR
25+1.48 EUR
100+1.35 EUR
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VP0550N3-G VP0550N3-G Microchip Technology VP0550-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006003A.pdf Description: MOSFET P-CH 500V 54MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
auf Bestellung 863 Stücke:
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6+3.4 EUR
25+2.85 EUR
100+2.58 EUR
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VP0808L-G VP0808L-G Microchip Technology VP0808-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006004A.pdf Description: MOSFET P-CH 80V 280MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
25+2.7 EUR
100+2.43 EUR
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VP2106N3-G VP2106N3-G Microchip Technology VP2106%20B082313.pdf Description: MOSFET P-CH 60V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
25+0.84 EUR
100+0.76 EUR
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VP2206N2 VP2206N2 Microchip Technology VP2206%20E082313.pdf Description: MOSFET P-CH 60V 750MA TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-39
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
1+26.84 EUR
25+24.61 EUR
100+22.28 EUR
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VP2206N3-G VP2206N3-G Microchip Technology VP2206%20E082313.pdf Description: MOSFET P-CH 60V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 888 Stücke:
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5+3.84 EUR
25+3.18 EUR
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VP2450N3-G VP2450N3-G Microchip Technology 20005569A.pdf Description: MOSFET P-CH 500V 100MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
25+2.54 EUR
100+2.32 EUR
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VP3203N3-G VP3203N3-G Microchip Technology VP3203%20B082613.pdf Description: MOSFET P-CH 30V 650MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 999 Stücke:
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6+3.1 EUR
25+2.58 EUR
100+2.33 EUR
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AC164379 AC164379 Microchip Technology 41687A.pdf Description: MODULE SOCKET PM3 UNIV 100QFP
Packaging: Bulk
For Use With/Related Products: MPLAB® PM3
Module/Board Type: Socket Module - QFP
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+790.28 EUR
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AC244061 AC244061 Microchip Technology AC244051_52_61.pdf Description: EXTENSION PAK PIC16F527
Packaging: Bulk
For Use With/Related Products: PIC16F527
Accessory Type: Debug Interface Module
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+127.04 EUR
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AC244062 AC244062 Microchip Technology AC244062.pdf Description: EXTENSION PAK PIC16F570
Packaging: Bulk
For Use With/Related Products: PIC16F570
Accessory Type: Debug Interface Module
Part Status: Obsolete
Utilized IC / Part: PIC16F570
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DM160215 DM160215 Microchip Technology Description: BOARD DEMO USB TO DALI INTERFACE
Packaging: Bag
Function: Communications
Type: Opto/Lighting
Supplied Contents: Board(s)
Contents: Board(s)
Produkt ist nicht verfügbar
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DM164127-2 DM164127-2 Microchip Technology 40001356C.pdf Description: EVAL BOARD FOR PIC16F1459
Packaging: Bag
Function: USB 2.0 Slave
Type: Interface
Utilized IC / Part: PIC16F1459, PIC18F13K50, PIC18F14K50
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Full Speed (12Mbps), MCU Based
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s)
Produkt ist nicht verfügbar
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DM320016 DM320016 Microchip Technology 40001739A.pdf Description: EVAL BOARD PCAP TOUCH MTCH6301
Produkt ist nicht verfügbar
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DV164139-2 DV164139-2 Microchip Technology 40001356C.pdf Description: EVAL BOARD FOR PIC16F1459
Packaging: Bag
Function: USB 2.0 Slave
Type: Interface
Utilized IC / Part: PIC16F1459, PIC18F13K50, PIC18F14K50
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: Full Speed (12Mbps), MCU Based
Embedded: Yes, MCU, 8-Bit
Part Status: Obsolete
Contents: Board(s), Cable(s), Accessories
Produkt ist nicht verfügbar
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HV20220FG-G-M931 HV20220FG-G-M931 Microchip Technology HV20220%20C071613.pdf Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
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HV20822FG-G-M931 HV20822FG-G-M931 Microchip Technology HV20822%20C071613.pdf Description: IC SWITCH SPST 32 OHM 48LQFP
Produkt ist nicht verfügbar
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HV2201FG-G-M931 HV2201FG-G-M931 Microchip Technology HV2201.pdf Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+18.81 EUR
Mindestbestellmenge: 1000
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HV2201PJ-G-M904 HV2201PJ-G-M904 Microchip Technology HV2201.pdf Description: IC ULTRASOUND SWITCH 1:1 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 28-PLCC (11.5x11.5)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
Produkt ist nicht verfügbar
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HV2301FG-G-M931 HV2301FG-G-M931 Microchip Technology HV2301.pdf Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HV430WG-G HV430WG-G Microchip Technology filehandler.aspx?ddocname=en570609 Description: IC RING GENERATOR 20SOIC
Produkt ist nicht verfügbar
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TN0604N3-G TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf
TN0604N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 2026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
25+1.94 EUR
100+1.79 EUR
Mindestbestellmenge: 8
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TN0606N3-G TN0606-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005935A.pdf
TN0606N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
25+1.35 EUR
100+1.21 EUR
Mindestbestellmenge: 11
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TN0610N3-G TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf
TN0610N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
25+1.78 EUR
100+1.64 EUR
Mindestbestellmenge: 9
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TN0620N3-G TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf
TN0620N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
25+2.13 EUR
100+1.96 EUR
Mindestbestellmenge: 7
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TN0702N3-G TN0702%20C080813.pdf
TN0702N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
auf Bestellung 1260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
25+1.9 EUR
100+1.7 EUR
Mindestbestellmenge: 8
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TN2106N3-G TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf
TN2106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
25+0.91 EUR
100+0.84 EUR
Mindestbestellmenge: 16
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TN2540N3-G TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
25+1.99 EUR
Mindestbestellmenge: 8
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TN2640N3-G TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf
TN2640N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
25+2.53 EUR
100+2.28 EUR
Mindestbestellmenge: 6
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TN5325N3-G 20005709A.pdf
TN5325N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
25+0.92 EUR
100+0.85 EUR
Mindestbestellmenge: 16
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TP0604N3-G TP0604-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005956A.pdf
TP0604N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
25+2.43 EUR
100+2.21 EUR
Mindestbestellmenge: 7
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TP0606N3-G TP0606.pdf
TP0606N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
25+1.53 EUR
100+1.39 EUR
Mindestbestellmenge: 10
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TP0620N3-G TP0620-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005957A.pdf
TP0620N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
25+2.63 EUR
100+2.42 EUR
Mindestbestellmenge: 6
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TP2104N3-G TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf
TP2104N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
25+1.04 EUR
100+0.96 EUR
Mindestbestellmenge: 14
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TP2535N3-G TP2535-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005971A.pdf
TP2535N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
25+2.55 EUR
100+2.3 EUR
Mindestbestellmenge: 6
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TP2540N3-G TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf
TP2540N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
25+2.5 EUR
100+2.27 EUR
Mindestbestellmenge: 6
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TP2635N3-G TP2635-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005796A.pdf
TP2635N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
25+2.78 EUR
100+2.53 EUR
Mindestbestellmenge: 6
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TP2640N3-G TP2640-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006372A.pdf
TP2640N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 180MA TO92-3
Produkt ist nicht verfügbar
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VN0104N3-G VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf
VN0104N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.97 EUR
100+0.89 EUR
Mindestbestellmenge: 15
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VN0106N3-G VN0106%20C081913.pdf
VN0106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 15190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
25+1.04 EUR
100+0.92 EUR
Mindestbestellmenge: 15
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VN0109N3-G VN0109-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005976A.pdf
VN0109N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
25+1.15 EUR
100+1.04 EUR
Mindestbestellmenge: 13
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VN0300L-G VN0300-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005977A.pdf
VN0300L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 1704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
25+1.85 EUR
100+1.72 EUR
Mindestbestellmenge: 8
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VN0550N3-G VN0550-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005978A.pdf
VN0550N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 50MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50mA (Tj)
Rds On (Max) @ Id, Vgs: 60Ohm @ 50mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
25+2.3 EUR
100+2.07 EUR
Mindestbestellmenge: 7
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VN0606L-G VN0606%20B081913.pdf
VN0606L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
25+2.1 EUR
100+1.9 EUR
Mindestbestellmenge: 7
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VN0808L-G VN0808%20B081913.pdf
VN0808L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
25+1.98 EUR
100+1.79 EUR
Mindestbestellmenge: 8
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VN10KN3-G VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 5658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
25+0.74 EUR
100+0.68 EUR
Mindestbestellmenge: 20
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VN1206L-G VN1206%20B081913.pdf
VN1206L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
25+2.82 EUR
100+2.56 EUR
Mindestbestellmenge: 6
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VN2106N3-G vn2106.pdf
VN2106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.63 EUR
100+0.56 EUR
Mindestbestellmenge: 24
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VN2210N2 20005559A.pdf
VN2210N2
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.64 EUR
25+23.52 EUR
100+21.3 EUR
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VN2210N3-G 20005559A.pdf
VN2210N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 3212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
25+3.47 EUR
100+3.17 EUR
Mindestbestellmenge: 5
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VN2222LL-G VN2222LL%20B082013.pdf
VN2222LL-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 6273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
27+0.67 EUR
100+0.61 EUR
Mindestbestellmenge: 22
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VN2224N3-G VN2224-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005988A.pdf
VN2224N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 540MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Tj)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 5mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
25+5.77 EUR
100+5.27 EUR
Mindestbestellmenge: 3
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VN2406L-G VN2406-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005990A.pdf
VN2406L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
25+2.59 EUR
100+2.34 EUR
Mindestbestellmenge: 6
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VN2410L-G VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf
VN2410L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 3075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
25+1.49 EUR
100+1.34 EUR
Mindestbestellmenge: 10
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VN2450N3-G VN2450_2009.pdf
VN2450N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
25+2.06 EUR
100+1.87 EUR
Mindestbestellmenge: 8
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VN2460N3-G VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf
VN2460N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
25+1.87 EUR
100+1.69 EUR
Mindestbestellmenge: 8
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VN3205N3-G VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf
VN3205N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
25+2.1 EUR
100+1.93 EUR
Mindestbestellmenge: 7
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VN4012L-G VN4012-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005997A.pdf
VN4012L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
25+2.67 EUR
100+2.43 EUR
Mindestbestellmenge: 6
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VP0104N3-G VP0104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005999A.pdf
VP0104N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1903 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
25+1.44 EUR
100+1.31 EUR
Mindestbestellmenge: 11
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VP0106N3-G VP0106-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006658A.pdf
VP0106N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
25+1.49 EUR
100+1.34 EUR
Mindestbestellmenge: 10
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VP0109N3-G VP0109-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006001A.pdf
VP0109N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 90V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 8Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1063 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
25+1.48 EUR
100+1.35 EUR
Mindestbestellmenge: 10
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VP0550N3-G VP0550-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006003A.pdf
VP0550N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 500V 54MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
auf Bestellung 863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
25+2.85 EUR
100+2.58 EUR
Mindestbestellmenge: 6
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VP0808L-G VP0808-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006004A.pdf
VP0808L-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 80V 280MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
25+2.7 EUR
100+2.43 EUR
Mindestbestellmenge: 6
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VP2106N3-G VP2106%20B082313.pdf
VP2106N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
25+0.84 EUR
100+0.76 EUR
Mindestbestellmenge: 18
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VP2206N2 VP2206%20E082313.pdf
VP2206N2
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 750MA TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-39
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.84 EUR
25+24.61 EUR
100+22.28 EUR
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VP2206N3-G VP2206%20E082313.pdf
VP2206N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
25+3.18 EUR
100+2.88 EUR
Mindestbestellmenge: 5
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VP2450N3-G 20005569A.pdf
VP2450N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 500V 100MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
auf Bestellung 811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
25+2.54 EUR
100+2.32 EUR
Mindestbestellmenge: 6
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VP3203N3-G VP3203%20B082613.pdf
VP3203N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 30V 650MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 10mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
25+2.58 EUR
100+2.33 EUR
Mindestbestellmenge: 6
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AC164379 41687A.pdf
AC164379
Hersteller: Microchip Technology
Description: MODULE SOCKET PM3 UNIV 100QFP
Packaging: Bulk
For Use With/Related Products: MPLAB® PM3
Module/Board Type: Socket Module - QFP
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+790.28 EUR
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AC244061 AC244051_52_61.pdf
AC244061
Hersteller: Microchip Technology
Description: EXTENSION PAK PIC16F527
Packaging: Bulk
For Use With/Related Products: PIC16F527
Accessory Type: Debug Interface Module
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+127.04 EUR
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AC244062 AC244062.pdf
AC244062
Hersteller: Microchip Technology
Description: EXTENSION PAK PIC16F570
Packaging: Bulk
For Use With/Related Products: PIC16F570
Accessory Type: Debug Interface Module
Part Status: Obsolete
Utilized IC / Part: PIC16F570
Produkt ist nicht verfügbar
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DM160215
DM160215
Hersteller: Microchip Technology
Description: BOARD DEMO USB TO DALI INTERFACE
Packaging: Bag
Function: Communications
Type: Opto/Lighting
Supplied Contents: Board(s)
Contents: Board(s)
Produkt ist nicht verfügbar
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DM164127-2 40001356C.pdf
DM164127-2
Hersteller: Microchip Technology
Description: EVAL BOARD FOR PIC16F1459
Packaging: Bag
Function: USB 2.0 Slave
Type: Interface
Utilized IC / Part: PIC16F1459, PIC18F13K50, PIC18F14K50
Supplied Contents: Board(s), Cable(s)
Primary Attributes: Full Speed (12Mbps), MCU Based
Embedded: Yes, MCU, 8-Bit
Part Status: Active
Contents: Board(s), Cable(s)
Produkt ist nicht verfügbar
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DM320016 40001739A.pdf
DM320016
Hersteller: Microchip Technology
Description: EVAL BOARD PCAP TOUCH MTCH6301
Produkt ist nicht verfügbar
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DV164139-2 40001356C.pdf
DV164139-2
Hersteller: Microchip Technology
Description: EVAL BOARD FOR PIC16F1459
Packaging: Bag
Function: USB 2.0 Slave
Type: Interface
Utilized IC / Part: PIC16F1459, PIC18F13K50, PIC18F14K50
Supplied Contents: Board(s), Cable(s), Accessories
Primary Attributes: Full Speed (12Mbps), MCU Based
Embedded: Yes, MCU, 8-Bit
Part Status: Obsolete
Contents: Board(s), Cable(s), Accessories
Produkt ist nicht verfügbar
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HV20220FG-G-M931 HV20220%20C071613.pdf
HV20220FG-G-M931
Hersteller: Microchip Technology
Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
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HV20822FG-G-M931 HV20822%20C071613.pdf
HV20822FG-G-M931
Hersteller: Microchip Technology
Description: IC SWITCH SPST 32 OHM 48LQFP
Produkt ist nicht verfügbar
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HV2201FG-G-M931 HV2201.pdf
HV2201FG-G-M931
Hersteller: Microchip Technology
Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+18.81 EUR
Mindestbestellmenge: 1000
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HV2201PJ-G-M904 HV2201.pdf
HV2201PJ-G-M904
Hersteller: Microchip Technology
Description: IC ULTRASOUND SWITCH 1:1 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 19Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 28-PLCC (11.5x11.5)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 8
Produkt ist nicht verfügbar
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HV2301FG-G-M931 HV2301.pdf
HV2301FG-G-M931
Hersteller: Microchip Technology
Description: IC ULTRASOUND SWITCH 1:1 48LQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Applications: Ultrasound
On-State Resistance (Max): 38Ohm
-3db Bandwidth: 50MHz
Supplier Device Package: 48-LQFP (7x7)
Voltage - Supply, Single (V+): 40V ~ 200V
Voltage - Supply, Dual (V±): ±40V ~ 160V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Part Status: Active
Number of Channels: 8
Produkt ist nicht verfügbar
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HV430WG-G filehandler.aspx?ddocname=en570609
HV430WG-G
Hersteller: Microchip Technology
Description: IC RING GENERATOR 20SOIC
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