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MIC45212-1YMP-EV MIC45212-1YMP-EV Microchip Technology MIC45212_EB.pdf Description: EVAL BOARD BUCK REG MIC45212-1
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2N7000-G 2N7000-G Microchip Technology 2N7000-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005695A.pdf Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1689 Stücke:
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24+0.76 EUR
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100+0.56 EUR
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2N7008-G 2N7008-G Microchip Technology 2N7008-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005800A.pdf Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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18+1.02 EUR
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CL25N3-G CL25N3-G Microchip Technology CL25-90V-25-mA-Simple-Temperature-Compensated-Constant-Current-LED-Driver%20-IC-Data%20Sheet-20005804A.pdf Description: IC LED DRIVER LINEAR 25MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 25mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
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CL2N3-G CL2N3-G Microchip Technology 20005448A.pdf Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Signage
Current - Output / Channel: 20mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
auf Bestellung 2766 Stücke:
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CL520N3-G CL520N3-G Microchip Technology CL520_CL525-Fixed-Constant-Current-Linear-LED-Driver-Data-Sheet-20005805A.pdf Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 1V ~ 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 20mA
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 90V
Part Status: Active
auf Bestellung 848 Stücke:
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CL525N3-G CL525N3-G Microchip Technology CL520_CL525-Fixed-Constant-Current-Linear-LED-Driver-Data-Sheet-20005805A.pdf Description: IC LED DRIVER LINEAR 25MA TO92-3
Produkt ist nicht verfügbar
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DN2530N3-G DN2530N3-G Microchip Technology 20005451A.pdf Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 11953 Stücke:
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DN2535N3-G DN2535N3-G Microchip Technology DN2535-Vertical-DMOS-FET-Data-Sheet-DS20005541.pdf Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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DN2540N3-G DN2540N3-G Microchip Technology DN2540%20B060313.pdf Description: MOSFET N-CH 400V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
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DN3545N3-G DN3545N3-G Microchip Technology DN3545-N-Channel-Depletion-Mode-Vertical-DMOS-FET-Data-Sheet-20005438A.pdf Description: MOSFET N-CH 450V 136MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 136mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 4515 Stücke:
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HV9921N3-G HV9921N3-G Microchip Technology 20005311A.pdf Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
auf Bestellung 1053 Stücke:
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HV9922N3-G HV9922N3-G Microchip Technology 20005311A.pdf Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Produkt ist nicht verfügbar
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HV9923N3-G HV9923N3-G Microchip Technology 20005311A.pdf Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
Produkt ist nicht verfügbar
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LND150N3-G LND150N3-G Microchip Technology LND150%20C041114.pdf Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 8048 Stücke:
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20+0.92 EUR
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100+0.7 EUR
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LP0701N3-G LP0701N3-G Microchip Technology LP0701-P-Channel-Enhancement-Mode-Lateral-MOSFET-Data-Sheet-20005447A.pdf Description: MOSFET P-CH 16.5V 500MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
auf Bestellung 709 Stücke:
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LR12N3-G LR12N3-G Microchip Technology LR12%20C080113.pdf Description: IC REG LINEAR POS ADJ 50MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Max): 88V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature
auf Bestellung 528 Stücke:
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25+2.16 EUR
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LR645N3-G LR645N3-G Microchip Technology 20005384A.pdf Description: IC REG LINEAR 10V 3MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3mA
Operating Temperature: -55°C ~ 155°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 10V
Part Status: Active
PSRR: 60dB (120Hz)
auf Bestellung 803 Stücke:
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LR745N3-G LR745N3-G Microchip Technology 20005394A.pdf Description: IC CTRLR PWM SMPS TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Supply: 35V ~ 450V
Applications: SMPS Start-Up
Current - Supply: 500µA
Supplier Device Package: TO-92-3
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LR8N3-G LR8N3-G Microchip Technology 20005399B.pdf Description: IC REG LIN POS ADJ 10MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 438V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 60dB (120Hz)
Protection Features: Over Current, Over Temperature
auf Bestellung 1817 Stücke:
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25+0.99 EUR
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TN0104N3-G TN0104N3-G Microchip Technology TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
auf Bestellung 997 Stücke:
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TN0106N3-G TN0106N3-G Microchip Technology TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 631 Stücke:
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TN0110N3-G TN0110N3-G Microchip Technology TN0110%20C080813.pdf Description: MOSFET N-CH 100V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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TN0604N3-G TN0604N3-G Microchip Technology TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 2026 Stücke:
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TN0606N3-G TN0606N3-G Microchip Technology TN0606-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005935A.pdf Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 762 Stücke:
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TN0610N3-G TN0610N3-G Microchip Technology TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1657 Stücke:
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TN0620N3-G TN0620N3-G Microchip Technology TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 417 Stücke:
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7+2.55 EUR
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TN0702N3-G TN0702N3-G Microchip Technology TN0702%20C080813.pdf Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
auf Bestellung 1628 Stücke:
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TN2106N3-G TN2106N3-G Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 943 Stücke:
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16+1.11 EUR
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TN2540N3-G TN2540N3-G Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 68 Stücke:
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TN2640N3-G TN2640N3-G Microchip Technology TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 167 Stücke:
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TN5325N3-G TN5325N3-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1443 Stücke:
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16+1.13 EUR
25+0.92 EUR
100+0.85 EUR
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TP0604N3-G TP0604N3-G Microchip Technology TP0604-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005956A.pdf Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
auf Bestellung 684 Stücke:
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7+2.9 EUR
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100+2.21 EUR
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TP0606N3-G TP0606N3-G Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1221 Stücke:
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10+1.87 EUR
25+1.53 EUR
100+1.39 EUR
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TP0620N3-G TP0620N3-G Microchip Technology TP0620-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005957A.pdf Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 775 Stücke:
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6+3.19 EUR
25+2.63 EUR
100+2.42 EUR
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TP2104N3-G TP2104N3-G Microchip Technology TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1130 Stücke:
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14+1.27 EUR
25+1.04 EUR
100+0.96 EUR
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TP2535N3-G TP2535N3-G Microchip Technology TP2535-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005971A.pdf Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 678 Stücke:
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6+3.04 EUR
25+2.55 EUR
100+2.3 EUR
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TP2540N3-G TP2540N3-G Microchip Technology TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 980 Stücke:
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6+2.99 EUR
25+2.5 EUR
100+2.27 EUR
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TP2635N3-G TP2635N3-G Microchip Technology TP2635-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005796A.pdf Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 344 Stücke:
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6+3.34 EUR
25+2.78 EUR
100+2.53 EUR
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TP2640N3-G TP2640N3-G Microchip Technology TP2640-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006372A.pdf Description: MOSFET P-CH 400V 180MA TO92-3
Produkt ist nicht verfügbar
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VN0104N3-G VN0104N3-G Microchip Technology VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2573 Stücke:
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15+1.18 EUR
25+0.97 EUR
100+0.89 EUR
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VN0106N3-G VN0106N3-G Microchip Technology VN0106%20C081913.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 15190 Stücke:
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15+1.23 EUR
25+1.04 EUR
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VN0109N3-G VN0109N3-G Microchip Technology VN0109-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005976A.pdf Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2844 Stücke:
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13+1.36 EUR
25+1.15 EUR
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VN0300L-G VN0300L-G Microchip Technology VN0300-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005977A.pdf Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 1704 Stücke:
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8+2.25 EUR
25+1.85 EUR
100+1.72 EUR
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VN0550N3-G VN0550N3-G Microchip Technology VN0550-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005978A.pdf Description: MOSFET N-CH 500V 50MA TO92-3
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
25+2.42 EUR
100+2.19 EUR
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VN0606L-G VN0606L-G Microchip Technology VN0606%20B081913.pdf Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 302 Stücke:
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25+2.1 EUR
100+1.9 EUR
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VN0808L-G VN0808L-G Microchip Technology VN0808%20B081913.pdf Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 416 Stücke:
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8+2.38 EUR
25+1.98 EUR
100+1.79 EUR
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VN10KN3-G VN10KN3-G Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 6246 Stücke:
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20+0.92 EUR
25+0.76 EUR
100+0.7 EUR
Mindestbestellmenge: 20
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VN1206L-G VN1206L-G Microchip Technology VN1206%20B081913.pdf Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 862 Stücke:
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VN2106N3-G VN2106N3-G Microchip Technology vn2106.pdf Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2686 Stücke:
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VN2210N2 VN2210N2 Microchip Technology 20005559A.pdf Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 605 Stücke:
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VN2210N3-G VN2210N3-G Microchip Technology 20005559A.pdf Description: MOSFET N-CH 100V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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VN2222LL-G VN2222LL-G Microchip Technology VN2222LL%20B082013.pdf Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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VN2224N3-G VN2224N3-G Microchip Technology VN2224-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005988A.pdf Description: MOSFET N-CH 240V 540MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Tj)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 5mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 964 Stücke:
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VN2406L-G VN2406L-G Microchip Technology VN2406-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005990A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1114 Stücke:
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VN2410L-G VN2410L-G Microchip Technology VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 3075 Stücke:
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VN2450N3-G VN2450N3-G Microchip Technology VN2450_2009.pdf Description: MOSFET N-CH 500V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 460 Stücke:
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VN2460N3-G VN2460N3-G Microchip Technology VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 359 Stücke:
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VN3205N3-G VN3205N3-G Microchip Technology VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf Description: MOSFET N-CH 50V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 834 Stücke:
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VN4012L-G VN4012L-G Microchip Technology VN4012-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005997A.pdf Description: MOSFET N-CH 400V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 521 Stücke:
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MIC45212-1YMP-EV MIC45212_EB.pdf
MIC45212-1YMP-EV
Hersteller: Microchip Technology
Description: EVAL BOARD BUCK REG MIC45212-1
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2N7000-G 2N7000-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005695A.pdf
2N7000-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1689 Stücke:
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Anzahl Preis
24+0.76 EUR
28+0.64 EUR
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2N7008-G 2N7008-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005800A.pdf
2N7008-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 1253 Stücke:
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CL25N3-G CL25-90V-25-mA-Simple-Temperature-Compensated-Constant-Current-LED-Driver%20-IC-Data%20Sheet-20005804A.pdf
CL25N3-G
Hersteller: Microchip Technology
Description: IC LED DRIVER LINEAR 25MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 25mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
auf Bestellung 1331 Stücke:
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CL2N3-G 20005448A.pdf
CL2N3-G
Hersteller: Microchip Technology
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Signage
Current - Output / Channel: 20mA
Topology: Constant Current
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 5V
Voltage - Supply (Max): 90V
Part Status: Active
auf Bestellung 2766 Stücke:
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24+0.76 EUR
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CL520N3-G CL520_CL525-Fixed-Constant-Current-Linear-LED-Driver-Data-Sheet-20005805A.pdf
CL520N3-G
Hersteller: Microchip Technology
Description: IC LED DRIVER LINEAR 20MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Voltage - Output: 1V ~ 90V
Mounting Type: Through Hole
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 20mA
Supplier Device Package: TO-92-3
Voltage - Supply (Min): 4.75V
Voltage - Supply (Max): 90V
Part Status: Active
auf Bestellung 848 Stücke:
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CL525N3-G CL520_CL525-Fixed-Constant-Current-Linear-LED-Driver-Data-Sheet-20005805A.pdf
CL525N3-G
Hersteller: Microchip Technology
Description: IC LED DRIVER LINEAR 25MA TO92-3
Produkt ist nicht verfügbar
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DN2530N3-G 20005451A.pdf
DN2530N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 300V 175MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 150mA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 11953 Stücke:
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Anzahl Preis
15+1.2 EUR
25+0.98 EUR
100+0.91 EUR
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DN2535N3-G DN2535-Vertical-DMOS-FET-Data-Sheet-DS20005541.pdf
DN2535N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 350V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 1023 Stücke:
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Anzahl Preis
12+1.53 EUR
25+1.29 EUR
100+1.19 EUR
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DN2540N3-G DN2540%20B060313.pdf
DN2540N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 120MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 0V
Power Dissipation (Max): 1W (Tc)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 910 Stücke:
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Anzahl Preis
13+1.46 EUR
25+1.2 EUR
100+1.1 EUR
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DN3545N3-G DN3545-N-Channel-Depletion-Mode-Vertical-DMOS-FET-Data-Sheet-20005438A.pdf
DN3545N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 450V 136MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 136mA (Ta)
Rds On (Max) @ Id, Vgs: 20Ohm @ 150mA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92 (TO-226)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 450 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 4515 Stücke:
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Anzahl Preis
13+1.46 EUR
25+1.23 EUR
100+1.12 EUR
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HV9921N3-G 20005311A.pdf
HV9921N3-G
Hersteller: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 20mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
auf Bestellung 1053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
25+1.09 EUR
100+0.97 EUR
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HV9922N3-G 20005311A.pdf
HV9922N3-G
Hersteller: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 50mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Produkt ist nicht verfügbar
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HV9923N3-G 20005311A.pdf
HV9923N3-G
Hersteller: Microchip Technology
Description: IC LED DRV OFFL TRIAC TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: TO-92-3
Dimming: Triac
Voltage - Supply (Min): 20V
Voltage - Supply (Max): 400V
Part Status: Active
Produkt ist nicht verfügbar
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LND150N3-G LND150%20C041114.pdf
LND150N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 30MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 30mA (Tj)
Rds On (Max) @ Id, Vgs: 1000Ohm @ 500µA, 0V
Power Dissipation (Max): 740mW (Ta)
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 25 V
auf Bestellung 8048 Stücke:
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20+0.92 EUR
25+0.79 EUR
100+0.7 EUR
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LP0701N3-G LP0701-P-Channel-Enhancement-Mode-Lateral-MOSFET-Data-Sheet-20005447A.pdf
LP0701N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 16.5V 500MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
auf Bestellung 709 Stücke:
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6+3.29 EUR
25+2.73 EUR
100+2.51 EUR
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LR12N3-G LR12%20C080113.pdf
LR12N3-G
Hersteller: Microchip Technology
Description: IC REG LINEAR POS ADJ 50MA TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 50mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 100V
Number of Regulators: 1
Supplier Device Package: TO-92
Voltage - Output (Max): 88V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 60dB (120Hz)
Protection Features: Over Temperature
auf Bestellung 528 Stücke:
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Anzahl Preis
7+2.57 EUR
25+2.16 EUR
100+1.94 EUR
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LR645N3-G 20005384A.pdf
LR645N3-G
Hersteller: Microchip Technology
Description: IC REG LINEAR 10V 3MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3mA
Operating Temperature: -55°C ~ 155°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 10V
Part Status: Active
PSRR: 60dB (120Hz)
auf Bestellung 803 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
25+0.81 EUR
100+0.75 EUR
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LR745N3-G 20005394A.pdf
LR745N3-G
Hersteller: Microchip Technology
Description: IC CTRLR PWM SMPS TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Voltage - Supply: 35V ~ 450V
Applications: SMPS Start-Up
Current - Supply: 500µA
Supplier Device Package: TO-92-3
auf Bestellung 1659 Stücke:
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Anzahl Preis
16+1.16 EUR
25+0.98 EUR
100+0.89 EUR
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LR8N3-G 20005399B.pdf
LR8N3-G
Hersteller: Microchip Technology
Description: IC REG LIN POS ADJ 10MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: TO-92-3
Voltage - Output (Max): 438V
Voltage - Output (Min/Fixed): 1.2V
Part Status: Active
PSRR: 60dB (120Hz)
Protection Features: Over Current, Over Temperature
auf Bestellung 1817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
25+0.99 EUR
100+0.91 EUR
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TN0104N3-G TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf
TN0104N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
auf Bestellung 997 Stücke:
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10+1.76 EUR
25+1.49 EUR
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TN0106N3-G TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf
TN0106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
25+1.35 EUR
100+1.21 EUR
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TN0110N3-G TN0110%20C080813.pdf
TN0110N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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TN0604N3-G TN0604-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005934A.pdf
TN0604N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 2026 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.34 EUR
25+1.94 EUR
100+1.79 EUR
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TN0606N3-G TN0606-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005935A.pdf
TN0606N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
25+1.35 EUR
100+1.21 EUR
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TN0610N3-G TN0610-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006418A.pdf
TN0610N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1657 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
25+1.78 EUR
100+1.64 EUR
Mindestbestellmenge: 9
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TN0620N3-G TN0620-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005936A.pdf
TN0620N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 200V 250MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 417 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
25+2.13 EUR
100+1.96 EUR
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TN0702N3-G TN0702%20C080813.pdf
TN0702N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 20V 530MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 20 V
auf Bestellung 1628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
25+2.14 EUR
100+1.92 EUR
Mindestbestellmenge: 7
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TN2106N3-G TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf
TN2106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.11 EUR
25+0.91 EUR
100+0.84 EUR
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TN2540N3-G TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
25+1.99 EUR
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TN2640N3-G TN2640-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005795A.pdf
TN2640N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 220MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
auf Bestellung 167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
25+2.53 EUR
100+2.28 EUR
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TN5325N3-G 20005709A.pdf
TN5325N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 1443 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
25+0.92 EUR
100+0.85 EUR
Mindestbestellmenge: 16
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TP0604N3-G TP0604-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005956A.pdf
TP0604N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 430MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 430mA (Tj)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 20 V
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
25+2.43 EUR
100+2.21 EUR
Mindestbestellmenge: 7
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TP0606N3-G TP0606.pdf
TP0606N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 1221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
25+1.53 EUR
100+1.39 EUR
Mindestbestellmenge: 10
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TP0620N3-G TP0620-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005957A.pdf
TP0620N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 200V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 200mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
25+2.63 EUR
100+2.42 EUR
Mindestbestellmenge: 6
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TP2104N3-G TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf
TP2104N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 175MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
25+1.04 EUR
100+0.96 EUR
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TP2535N3-G TP2535-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005971A.pdf
TP2535N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 678 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.04 EUR
25+2.55 EUR
100+2.3 EUR
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TP2540N3-G TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf
TP2540N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 86MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 86mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
25+2.5 EUR
100+2.27 EUR
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TP2635N3-G TP2635-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005796A.pdf
TP2635N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 180MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 180mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 300mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.34 EUR
25+2.78 EUR
100+2.53 EUR
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TP2640N3-G TP2640-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006372A.pdf
TP2640N3-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 180MA TO92-3
Produkt ist nicht verfügbar
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VN0104N3-G VN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005975A.pdf
VN0104N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.97 EUR
100+0.89 EUR
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VN0106N3-G VN0106%20C081913.pdf
VN0106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 15190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
25+1.04 EUR
100+0.92 EUR
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VN0109N3-G VN0109-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005976A.pdf
VN0109N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 90V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
auf Bestellung 2844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
25+1.15 EUR
100+1.04 EUR
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VN0300L-G VN0300-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005977A.pdf
VN0300L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 30V 640MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
auf Bestellung 1704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
25+1.85 EUR
100+1.72 EUR
Mindestbestellmenge: 8
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VN0550N3-G VN0550-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005978A.pdf
VN0550N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 50MA TO92-3
auf Bestellung 294 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
25+2.42 EUR
100+2.19 EUR
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VN0606L-G VN0606%20B081913.pdf
VN0606L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
25+2.1 EUR
100+1.9 EUR
Mindestbestellmenge: 7
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VN0808L-G VN0808%20B081913.pdf
VN0808L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 80V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
25+1.98 EUR
100+1.79 EUR
Mindestbestellmenge: 8
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VN10KN3-G VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 6246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
25+0.76 EUR
100+0.7 EUR
Mindestbestellmenge: 20
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VN1206L-G VN1206%20B081913.pdf
VN1206L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 120V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 120 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
25+2.82 EUR
100+2.56 EUR
Mindestbestellmenge: 6
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VN2106N3-G vn2106.pdf
VN2106N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 300MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.63 EUR
100+0.56 EUR
Mindestbestellmenge: 24
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VN2210N2 20005559A.pdf
VN2210N2
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.7A TO39
Packaging: Bag
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+25.64 EUR
25+23.52 EUR
100+21.3 EUR
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VN2210N3-G 20005559A.pdf
VN2210N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V
Power Dissipation (Max): 740mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
auf Bestellung 3212 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
25+3.47 EUR
100+3.17 EUR
Mindestbestellmenge: 5
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VN2222LL-G VN2222LL%20B082013.pdf
VN2222LL-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 230MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 400mW (Ta), 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 10970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
26+0.68 EUR
100+0.62 EUR
Mindestbestellmenge: 22
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VN2224N3-G VN2224-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005988A.pdf
VN2224N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 540MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 540mA (Tj)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 3V @ 5mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.95 EUR
25+5.77 EUR
100+5.27 EUR
Mindestbestellmenge: 3
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VN2406L-G VN2406-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005990A.pdf
VN2406L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 1114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
25+2.59 EUR
100+2.34 EUR
Mindestbestellmenge: 6
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VN2410L-G VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf
VN2410L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 3075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
25+1.49 EUR
100+1.34 EUR
Mindestbestellmenge: 10
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VN2450N3-G VN2450_2009.pdf
VN2450N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 200MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
25+2.06 EUR
100+1.87 EUR
Mindestbestellmenge: 8
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VN2460N3-G VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf
VN2460N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
25+1.87 EUR
100+1.7 EUR
Mindestbestellmenge: 8
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VN3205N3-G VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf
VN3205N3-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
25+2.1 EUR
100+1.93 EUR
Mindestbestellmenge: 7
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VN4012L-G VN4012-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005997A.pdf
VN4012L-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 160MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 100mA, 4.5V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.22 EUR
25+2.67 EUR
100+2.43 EUR
Mindestbestellmenge: 6
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