Produkte > AON

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14  [ Nächste Seite >> ]
BezeichnungHerstellerBeschreibungVerfügbarkeitPrivatkunde
AON7804Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 426333 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.57 EUR
22+0.99 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
2000+0.39 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7804Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 9A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7804
Produktcode: 168958
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7804_101Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 9A/22A 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.1W (Ta), 17W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7804_102Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 9A 8DFN
Packaging: Bulk
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 888pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 19081 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.76 EUR
20+1.09 EUR
100+0.71 EUR
500+0.55 EUR
1000+0.49 EUR
2000+0.45 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.4 EUR
10000+0.37 EUR
15000+0.36 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7810Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 6A 8-Pin DFN EP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7810ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5A; 8W; DFN3x3 DUAL
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5A
Power dissipation: 8W
Case: DFN3x3 DUAL
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7812Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7820Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 8DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7826Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 9A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 20V
Power - Max: 3.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7900Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7900Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7902Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.8W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7932Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7932_101Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7934Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 13A/15A 8-Pin DFN EP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7934ALPHA&OMEGATransistor 2xN-Channel MOSFET; 30V; 20V; 15,8mOhm/11,6mOhm; 16A/18A; 23W/25W; -55°C ~ 150°C; AON7934 TAON7934
Anzahl je Verpackung: 25 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.32 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7934ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 9/10W; DFN3x3A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/14A
Power dissipation: 9/10W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 10.2/7.7mΩ
Mounting: SMD
Gate charge: 3.9/6nC
Kind of channel: enhancement
Semiconductor structure: asymmetric
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
178+0.48 EUR
204+0.42 EUR
219+0.39 EUR
500+0.36 EUR
Mindestbestellmenge: 81 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7934Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.19 EUR
11+2.01 EUR
100+1.34 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7934
Produktcode: 148857
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7934Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON7934_101Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON7934_102Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONA66813Alpha & Omega Semiconductor Inc.Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.19 EUR
10+4.7 EUR
100+3.3 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONA66813Alpha & Omega Semiconductor Inc.Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONA66916Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4690 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.59 EUR
10+6.34 EUR
100+4.51 EUR
500+3.72 EUR
1000+3.47 EUR
2000+3.45 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONA66916Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 30A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONA66916Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOND32324Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOND32324Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
auf Bestellung 2978 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOND32324ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 16/-16A
Power dissipation: 5/12W
Case: DFN5x6
Gate-source voltage: ±20V; ±25V
On-state resistance: 14/12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOND62930Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 100V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 7.3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AOND62930ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 7A; Idm: 25A; 2.9W
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 2.9W
Case: DFN5x6 EP2
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONH36328ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Power dissipation: 9.2W
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 11.5mΩ
Gate-source voltage: 16V
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of channel: enhancement
Case: DFN3x3A
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONH36328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONH36334Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONL32328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.61 EUR
6000+0.56 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONL32328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Supplier Device Package: 12-DFN-EP (4x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.6W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N and 2 P-Channel
Mounting Type: Surface Mount
Package / Case: 12-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 9592 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.34 EUR
15+1.48 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36320Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36332Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
auf Bestellung 2347 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.61 EUR
10+2.3 EUR
100+1.55 EUR
500+1.23 EUR
1000+1.12 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36332Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36336Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 50A 8DFN
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.93 EUR
6000+0.86 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36336ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 50A; 13/12W; asymmetric
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 13/12W
Gate-source voltage: ±12V
On-state resistance: 4.7/5.8mΩ
Mounting: SMD
Gate charge: 19/14nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONP36336Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 50A 8DFN
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
auf Bestellung 8927 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
10+2.17 EUR
100+1.45 EUR
500+1.14 EUR
1000+1.05 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR20485Alpha & Omega SemiconductorMedium Voltage MOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR20485Alpha & Omega Semiconductor Inc.Description: SINGLE
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21117Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 59764 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.09 EUR
11+1.96 EUR
100+1.31 EUR
500+1.04 EUR
1000+0.94 EUR
2000+0.87 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21117Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.63 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21117Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.79 EUR
10000+0.74 EUR
15000+0.7 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21305CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21305CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21307Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 17A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 125510 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.28 EUR
15+1.43 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
2000+0.61 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
10000+0.5 EUR
15000+0.49 EUR
25000+0.46 EUR
35000+0.45 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21307Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 17A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21307AOSMOSFET P-CH 30V 24A 8DFN Транзистори
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AONR21311CAlpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 28691 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
23+0.93 EUR
100+0.6 EUR
500+0.45 EUR
1000+0.42 EUR
2000+0.37 EUR
Mindestbestellmenge: 14 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.33 EUR
10000+0.31 EUR
15000+0.29 EUR
25000+0.27 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321AOSMOSFET P-CH 30V 24A 8DFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357AOSMOSFET P-CH 30V 21A/34A 8DFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357
Produktcode: 215468
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > Transistoren P-Kanal-Feld
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 28968 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.26 EUR
15+1.42 EUR
100+0.93 EUR
500+0.73 EUR
1000+0.65 EUR
2000+0.6 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.54 EUR
10000+0.5 EUR
15000+0.48 EUR
25000+0.46 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR21357_201Alpha & Omega Semiconductor30V P-Channel Mosfet
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR26309AAlpha & Omega Semiconductor30V Complementary MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR26309AAlpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 6.5A 8DFN
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel, Common Drain (Complementary)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32308CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 17A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
Dimensions: 3x3mm
On-state resistance: 8.7mΩ
Power dissipation: 9.6W
Drain current: 25.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32318Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 6360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
15+1.45 EUR
25+1.37 EUR
100+1.13 EUR
250+1.06 EUR
500+0.93 EUR
1000+0.74 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32318Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 6360 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 56W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32320Alpha & Omega Semiconductor Inc.Description: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.21 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32320C
Produktcode: 180701
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 9772 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
34+0.63 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.24 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32320CAlpha & Omega Semiconductor30V N-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR32340C
Produktcode: 188231
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONR34332CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±12V
Power dissipation: 22W
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Case: DFN3.3x3.3 EP
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR34332CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 48A/50A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A/12A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36326CAlpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36326CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 48A; 8W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 8W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36328Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36366Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36366Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.44 EUR
10000+0.4 EUR
15000+0.39 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36366Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 19810 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.9 EUR
18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.54 EUR
2000+0.49 EUR
Mindestbestellmenge: 11 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/32A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 6760 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.36 EUR
25+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
2000+0.33 EUR
Mindestbestellmenge: 16 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR36368Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14  [ Nächste Seite >> ]