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AON7810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 542pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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Lieferzeit 10-14 Tag (e)
5000+0.39 EUR
Mindestbestellmenge: 5000 Stücke
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AON7812Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6A
Produkt ist nicht verfügbar
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AON7820Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 8DFN
Produkt ist nicht verfügbar
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AON7826Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 10V
Rds On (Max) @ Id, Vgs: 23mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Produkt ist nicht verfügbar
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AON7900Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
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AON7900Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
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AON7902Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 8A/13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
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AON7932Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Produkt ist nicht verfügbar
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AON7932_101Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.6A, 8.1A
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
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AON7934ALPHA&OMEGATransistor 2xN-Channel MOSFET; 30V; 20V; 15,8mOhm/11,6mOhm; 16A/18A; 23W/25W; -55°C ~ 150°C; AON7934 TAON7934
Anzahl je Verpackung: 25 Stücke
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Lieferzeit 7-14 Tag (e)
25+1.36 EUR
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AON7934Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
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AON7934
Produktcode: 148857
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Transistoren > MOSFET N-CH
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AON7934Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 13A/15A 8-Pin DFN EP
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AON7934ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 12/14A; 9/10W; DFN3x3A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12/14A
Power dissipation: 9/10W
Case: DFN3x3A
Gate-source voltage: ±20V
On-state resistance: 10.2/7.7mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 3.9/6nC
Semiconductor structure: asymmetric
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AON7934Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A/15A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 15A
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
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AON7934_101Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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AON7934_102Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13A 8DFN
Packaging: Bulk
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 485pF @ 15V, 807pF @ 15V
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V, 17.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Obsolete
Produkt ist nicht verfügbar
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AONA66813Alpha & Omega Semiconductor Inc.Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
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AONA66813Alpha & Omega Semiconductor Inc.Description: 80V N-CHANNEL ALPHASGT2 TM
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 216A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 40 V
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10+4.83 EUR
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AONA66916Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
auf Bestellung 4690 Stücke:
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3+9.59 EUR
10+6.34 EUR
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1000+3.47 EUR
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AONA66916Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 30A
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AONA66916Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 50 V
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AOND32324Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOND32324ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 16/-16A
Power dissipation: 5/12W
Case: DFN5x6
Gate-source voltage: ±20V; ±25V
On-state resistance: 14/12mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Kind of transistor: complementary pair
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AOND32324Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 13A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 12.5W (Tc), 4.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 16A (Tc), 15A (Ta), 16A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V, 1995pF @ 15V
Rds On (Max) @ Id, Vgs: 14mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AOND62930ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 7A; Idm: 25A; 2.9W
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 7A
Pulsed drain current: 25A
Power dissipation: 2.9W
Case: DFN5x6 EP2
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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AOND62930Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 100V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.5W (Ta), 7.3W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 415pF @ 50V
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
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AONH36328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 13.8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 15V
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
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AONH36328ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 18A; Idm: 40A; 9.2W; DFN3x3A
Power dissipation: 9.2W
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 11.5mΩ
Gate-source voltage: 16V
Drain current: 18A
Drain-source voltage: 30V
Pulsed drain current: 40A
Kind of channel: enhancement
Case: DFN3x3A
Type of transistor: N-MOSFET x2
Semiconductor structure: asymmetric
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AONH36334Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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AONL32328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Packaging: Cut Tape (CT)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package: 12-DFN-EP (4x3)
auf Bestellung 3561 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.59 EUR
13+1.63 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 9 Stücke
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AONL32328Alpha & Omega Semiconductor Inc.Description: MOSFET 2N/2P-CH 30V 8A 12DFN
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 395pF @ 15V, 730pF @ 15V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V, 27mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 24nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.6V @ 250µA
Supplier Device Package: 12-DFN-EP (4x3)
Produkt ist nicht verfügbar
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AONP36320Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 26A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.3W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc), 27A (Ta), 103A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 15V, 1650pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V, 3mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
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AONP36332Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Produkt ist nicht verfügbar
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AONP36332Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 50A (Tc), 20A (Ta), 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 15V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V, 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, 30nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
auf Bestellung 2347 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.61 EUR
10+2.3 EUR
100+1.55 EUR
500+1.23 EUR
1000+1.12 EUR
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AONP36336Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
auf Bestellung 6008 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
10+2.17 EUR
50+1.63 EUR
100+1.45 EUR
500+1.14 EUR
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AONP36336ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 50A; 13/12W; asymmetric
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 13/12W
Gate-source voltage: ±12V
On-state resistance: 4.7/5.8mΩ
Mounting: SMD
Gate charge: 19/14nC
Kind of package: reel; tape
Kind of channel: enhancement
Semiconductor structure: asymmetric
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONP36336Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.4W (Ta), 33W (Tc), 3.1W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1330pF @ 15V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.93 EUR
Mindestbestellmenge: 3000 Stücke
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AONR20485Alpha & Omega SemiconductorMedium Voltage MOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR20485Alpha & Omega Semiconductor Inc.Description: SINGLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 13A, 10V
Power Dissipation (Max): 5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V
Produkt ist nicht verfügbar
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AONR21117Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 34A 8-Pin DFN-A EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.65 EUR
Mindestbestellmenge: 5000 Stücke
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AONR21117Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.76 EUR
15000+0.69 EUR
Mindestbestellmenge: 5000 Stücke
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AONR21117Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 26.5A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6560 pF @ 10 V
auf Bestellung 58711 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
11+1.93 EUR
50+1.44 EUR
100+1.29 EUR
500+1.01 EUR
Mindestbestellmenge: 7 Stücke
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AONR21305CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR21305CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -34A; Idm: -210A; 16W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -34A
Power dissipation: 16W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -210A
Produkt ist nicht verfügbar
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AONR21305CAlpha & Omega SemiconductorP-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR21307Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 17A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
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AONR21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
15000+0.49 EUR
Mindestbestellmenge: 5000 Stücke
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AONR21307ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 11W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -24A
Power dissipation: 11W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AONR21307Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 17A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
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AONR21307Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 17A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
auf Bestellung 48228 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.28 EUR
15+1.44 EUR
50+1.06 EUR
100+0.94 EUR
500+0.73 EUR
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AONR21307AOSMOSFET P-CH 30V 24A 8DFN Транзистори
auf Bestellung 725 Stücke:
Lieferzeit 14-21 Tag (e)
5+1.51 EUR
Mindestbestellmenge: 5 Stücke
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AONR21311CAlpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 7A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar
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AONR21311CALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -48A; 4.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -48A
Produkt ist nicht verfügbar
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AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 155072 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
23+0.93 EUR
50+0.68 EUR
100+0.6 EUR
500+0.45 EUR
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AONR21321AOSMOSFET P-CH 30V 24A 8DFN Транзистори
Produkt ist nicht verfügbar
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AONR21321ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.6W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.6W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
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AONR21321Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 13A 8-Pin DFN EP T/R
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 44 Stücke
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AONR21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 12A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 155000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.33 EUR
15000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
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AONR21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR21357
Produktcode: 215468
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > Transistoren P-Kanal-Feld
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AONR21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 17000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.54 EUR
15000+0.48 EUR
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AONR21357AOSMOSFET P-CH 30V 21A/34A 8DFN Транзистори
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AONR21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
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AONR21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
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AONR21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 18859 Stücke:
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AONR21357HAlpha & Omega Semiconductor Inc.Description: LV MOSFET DFN3X3A_8L_EP1_P
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AONR21357_201Alpha & Omega Semiconductor30V P-Channel Mosfet
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AONR26309AAlpha & Omega Semiconductor30V Complementary MOSFET
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AONR26309AAlpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 6.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain (Complementary)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W (Ta), 7W (Tc), 1.5W (Ta), 20.8W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 14A (Tc), 5.7A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 15V, 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 10V, 32mOhm @ 5.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA, 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
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AONR32308CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
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AONR32314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 17A/30A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 17A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
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AONR32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.5A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 8.7mΩ
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhancement
Dimensions: 3x3mm
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AONR32314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 17A 8-Pin DFN EP T/R
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AONR32318Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6360 pF @ 15 V
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100+1.21 EUR
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AONR32318ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 22W
Kind of package: reel; tape
Case: DFN3.3x3.3 EP
On-state resistance: 2.2mΩ
Mounting: SMD
Pulsed drain current: 200A
Power dissipation: 22W
Gate charge: 105nC
Polarisation: unipolar
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
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AONR32318Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6360 pF @ 15 V
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AONR32318AOSN-Channel 30 V 50A (Tc) 56W (Tc) Surface Mount 8-DFN-EP (3.3x3.3) Транзистори
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AONR32320Alpha & Omega Semiconductor Inc.Description: MOSFET
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
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AONR32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
auf Bestellung 9772 Stücke:
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AONR32320CAlpha & Omega Semiconductor30V N-Channel MOSFET
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AONR32320CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 9.5A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 11W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
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AONR32320C
Produktcode: 180701
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Transistoren > MOSFET N-CH
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AONR32320CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 36A; 4.5W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 4.5W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 36A
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AONR32340C
Produktcode: 188231
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Transistoren > MOSFET N-CH
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AONR34332CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 400A; 22W
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 78nC
On-state resistance: 1.6mΩ
Gate-source voltage: ±12V
Power dissipation: 22W
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 400A
Case: DFN3.3x3.3 EP
Kind of channel: enhancement
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AONR34332CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 48A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4175 pF @ 15 V
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AONR36326CAlpha & Omega SemiconductorN-Channel MOSFET
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AONR36326CALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 48A; 8W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 8W
Case: DFN3x3 EP
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 9nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 48A
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AONR36326CAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 12A/12A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V
Power Dissipation (Max): 3.1W (Ta), 20.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
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AONR36328ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 70A; 9.6W; DFN3x3 EP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 9.6W
Case: DFN3x3 EP
Gate-source voltage: ±16V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 70A
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AONR36328Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
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AONR36366Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30A/34A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
auf Bestellung 15000 Stücke:
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5000+0.44 EUR
10000+0.4 EUR
15000+0.39 EUR
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AONR36366Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
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AONR36366Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 30A/34A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
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AONR36368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
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AONR36368Alpha & Omega SemiconductorN-Channel MOSFET
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AONR36368Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 23A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 4.1W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 15 V
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5000+0.3 EUR
Mindestbestellmenge: 5000 Stücke
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