Produkte > MSC
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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| MSCSM120HM50CT3AG | Microchip Technology | Description: PM-MOSFET-SIC-SBD~-SP3F | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120HM50CT3AG | Microchip Technology / Atmel | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM50CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HM50T3AG | Microchip Technology | Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120HM50T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120HRM052NG | Microchip Technology | Description: MOSFET 4N-CH 1200V/700V 472A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.846kW (Tc), 1.161kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 472A (Tc), 442A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V, 18000pF @ 700V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V, 4.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V, 860nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA, 2.4V @ 16mA | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HRM08NG | Microchip Technology | Description: MOSFET 4N-CH 1200V/700V 317A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1253W (Tc), 613W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 317A (Tc), 227A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V, 9000pF @ 700V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V, 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V, 430nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA, 2.4V @ 8mA | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HRM163AG | Microchip Technology | Description: MOSFET 4N-CH 1200V/700V 173A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc), 365W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 173A (Tc), 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V, 4500pF @ 700V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V, 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC, 215nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA, 2.4V @ 4mA | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120HRM311AG | Microchip Technology | Description: MOSFET 4N-CH 1200V/700V 89A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc), 365W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV), 700V Current - Continuous Drain (Id) @ 25°C: 89A (Tc), 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V, 4500pF @ 700V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V, 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V, 215nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA, 2.4V @ 4mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120SKM11CT3AG | Microchip Technology | Description: MOSFET IPM 1.2KV 254A MODULE Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: MOSFET Configuration: 1 Phase Voltage - Isolation: 4000Vrms Part Status: Active Current: 254 A Voltage: 1.2 kV | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120SKM11CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120SKM31CTBL1NG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-BL1 | auf Bestellung 44 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120SKM31CTBL1NG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-BL1 Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Power Dissipation (Max): 310W Vgs(th) (Max) @ Id: 2.8V @ 1mA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V | auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TAM11CTPAG | Microchip Technology | Description: SIC 6N-CH 1200V 251A SP6-P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP6-P Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TAM11CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM11TPAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM11TPAG | Microchip Technology | Description: PM-MOSFET-SIC-SP6P Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 9mA Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1.042kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM16CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM16CTPAG | Microchip Technology | Description: MOSFET 6N-CH 1200V 171A SP6-P Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 728W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP6-P Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM16TPAG | Microchip Technology | Description: SIC 6N-CH 1200V 171A Power - Max: 728W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM16TPAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6P | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM31CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TAM31CT3AG | Microchip Technology | Description: SIC 6N-CH 1200V 89A SP3F Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tube Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TAM31T3AG | Microchip Technology | Description: SIC 6N-CH 1200V 89A Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 6 N-Channel (3-Phase Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TLM08CAG | Microchip Technology | Description: SIC 4N-CH 1200V 333A SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1378W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 4mA Supplier Device Package: SP6C Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TLM08CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TLM11CAG | Microchip Technology | Description: SIC 4N-CH 1200V 251A SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1042W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Supplier Device Package: SP6C | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TLM16C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TLM16C3AG | Microchip Technology | Description: MOSFET 4N-CH 1200V 173A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Supplier Device Package: SP3F | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TLM31C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TLM31C3AG | Microchip Technology | Description: SIC 4N-CH 1200V 89A SP3F Supplier Device Package: SP3F Vgs(th) (Max) @ Id: 2.8V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 395W (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 4 N-Channel (Three Level Inverter) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120TLM50C3AG | Microchip Technology | Description: MOSFET 4N-CH 1200V 55A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 1mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM120TLM50C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M062CT6AG | Microchip Technology | Description: MOSFET 2N-CH 1200V 420A Rds On (Max) @ Id, Vgs: 6.2mOhm @ 200A, 20V Input Capacitance (Ciss) (Max) @ Vds: 15100pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Power - Max: 1.753kW (Tc) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N Channel (Phase Leg) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Part Status: Active Vgs(th) (Max) @ Id: 2.8V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1160nC @ 20V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M11CT6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M16CT3AG | Microchip Technology | Description: SIC 2N-CH 1200V 173A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M16CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M16CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M16CTPAG | Microchip Technology | Description: SIC 6N-CH 1200V 171A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 728W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 171A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120VR1M31C1AG | Microchip Technology | Description: SIC 2N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120X10CTYZBNMG | Microchip Technology | Description: PM-MOSFET-SIC-SBD-6HPD Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 116W (Tc), 196W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 838pF @ 1000V, 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 100mOhm @ 15A, 20V, 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 64nC @ 20V, 137nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 1mA, 2.7V @ 2mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120XM31CTYZBNMG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120XM31RTBL3NG | Microchip Technology | Description: PM-MOSFET-SIC-BL3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Operating Temperature: -55°C ~ 175°C (TJ) NTC Thermistor: Yes Current - Collector (Ic) (Max): 79 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 310 W Input Capacitance (Cies) @ Vce: 3020 pF @ 1 kV | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120XM50CTYZBNMG | Microchip Technology | Description: MOSFET 6N-CH 1200V 49A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 196W (Tc), 315W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 49A (Tc), 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V, 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V, 232nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA, 2.8V @ 3mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM120XM50CTYZBNMG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-6HPD | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM029CT6LIAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SBD-SP6LI | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170AM029CT6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1700V 676A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3000W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 676A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 39600pF @ 1000V Rds On (Max) @ Id, Vgs: 3.75mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2136nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 30mA | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM039CD3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 523A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2400W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM039CD3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM039CT6AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 523A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2400W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM058CD3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-D3 | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM058CD3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 353A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1642W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM058CT6AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 353A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1642W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170AM058CT6AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170AM058CT6LIAG | Microchip Technology | Description: MOSFET 2N-CH 1700V 353A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1642W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM11CT3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 240A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1140W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Part Status: Active | auf Bestellung 17 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM15CT3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 181A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 862W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM15CT3AG | Microchip Technology | Discrete Semiconductor Modules | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170AM23CT1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170AM23CT1AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 124A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Part Status: Active | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM45CT1AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 64A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170AM45CT1AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP1F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170DUM039AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170DUM039AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 523A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2400W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 523A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29700pF @ 1000V Rds On (Max) @ Id, Vgs: 5mOhm @ 270A, 20V Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 22.5mA Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170DUM058AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 353A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1642W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170DUM058AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170DUM11T3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 240A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1140W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170DUM15T3AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170DUM15T3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 181A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 862W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 181A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170DUM23T3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170DUM23T3AG | Microchip Technology | Description: MOSFET 2N-CH 1700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HM087CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HM087CAG | Microchip Technology | Description: MOSFET 4N-CH 1700V 238A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1114W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HM087CAG | Microchip Technology | Full Bridge SiC Power Module | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| MSCSM170HM12CAG | Microchip Technology | Discrete Semiconductor Modules | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HM12CAG | Microchip Technology | Description: MOSFET 4N-CH 1700V 179A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 843W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HM23CT3AG | Microchip Technology | Description: MOSFET 4N-CH 1700V 124A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HM45CT3AG | Microchip Technology | Description: MOSFET 4N-CH 1700V 64A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HM45CT3AG | Microchip Technology | Discrete Semiconductor Modules | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HRM075NG | Microchip Technology | Description: MOSFET 4N-CH 1700V/1200V 337A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1492W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc), 317A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V, 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V, 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V, 928nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 15mA, 2.8V @ 12mA Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HRM075NG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HRM11NG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HRM11NG | Microchip Technology | Description: MOSFET 4N-CH 1700V/1200V 226A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1012W (Tc), 662W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 226A (Tc), 163A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V, 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V, 464nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA, 2.8V @ 6mA | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HRM233AG | Microchip Technology | Description: MOSFET 4N-CH 1700V/1200V 124A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc), 395W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA | auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170HRM233AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HRM451AG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SP1F | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170HRM451AG | Microchip Technology | Description: MOSFET 4N-CH 1700V/1200V 64A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc), 395W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc), 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V, 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V, 232nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA, 2.8V @ 3mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TAM15CTPAG | Microchip Technology | Description: MOSFET 6N-CH 1700V 179A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 843W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170TAM15CTPAG | Microchip Technology | MOSFET Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TAM23CTPAG | Microchip Technology | Description: MOSFET 6N-CH 1700V 122A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 588W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 122A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170TAM23CTPAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6P | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TAM45CT3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TAM45CT3AG | Microchip Technology | Description: MOSFET 6N-CH 1700V 64A Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Part Status: Active | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TLM11CAG | Microchip Technology | Description: MOSFET 4N-CH 1700V 238A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1114W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 10mA Supplier Device Package: SP6C Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170TLM11CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TLM15CAG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP6C | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TLM15CAG | Microchip Technology | Description: MOSFET 4N-CH 1700V 179A SP6C Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 843W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 179A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 7.5mA Supplier Device Package: SP6C Part Status: Active | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170TLM23C3AG | Microchip Technology | Description: MOSFET 4N-CH 1700V 124A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 602W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA Supplier Device Package: SP3F | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| MSCSM170TLM23C3AG | Microchip Technology | Discrete Semiconductor Modules PM-MOSFET-SIC-SBD-SP3F | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
| MSCSM170TLM45C3AG | Microchip Technology | Description: MOSFET 4N-CH 1700V 64A SP3F Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Three Level Inverter) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 319W (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 1000V Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 20V Gate Charge (Qg) (Max) @ Vgs: 178nC @ 20V Vgs(th) (Max) @ Id: 3.2V @ 2.5mA Supplier Device Package: SP3F Part Status: Active | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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