Produkte > MMF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMFTN123 | Diotec Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN123 | Diotec Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN123 | Diotec Semiconductor | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | auf Bestellung 5470 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN123K | Diotec Semiconductor | MOSFETs SOT-23, N, 100V, 0.17A, 6?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN123K-AQ | Diotec Semiconductor | MOSFETs SOT-23, N, 100V, 0.17A, 6?, 150C, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN138 | DIOTEC | Transistor: N-MOSFET ; unipolar ; 50V ; 0,22A ; 0,36W ; SOT23 MMFTN138-DIO MMFTN138 TMMFTN138 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Semiconductor | Description: MOSFET, SOT-23, 50V, 0.22A, N, 0 Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.6V @ 1mA Power Dissipation (Max): 360mW (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Strip | auf Bestellung 333000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN138 | Diotec Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN138 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 50V, 0.22A, 150C, N | auf Bestellung 13358 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; Idm: 0.88A; 0.36W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Pulsed drain current: 0.88A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 3642 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3420 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138 | Diotec Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN138K | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 60V, 0.36A, 150C, N | auf Bestellung 14947 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Gate charge: 1.3nC Power dissipation: 0.35W Drain current: 0.36A Pulsed drain current: 1.2A On-state resistance: 6.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET | auf Bestellung 3064 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138K-AQ | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 60V, 0.36A, 150C, N, AEC-Q101 | auf Bestellung 3752 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138K-AQ | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 360mA; Idm: 1.2A; 0.35W; SOT23 Kind of package: reel; tape Mounting: SMD Case: SOT23 Gate charge: 1.3nC Power dissipation: 0.35W Drain current: 0.36A Pulsed drain current: 1.2A On-state resistance: 6.5Ω Gate-source voltage: ±20V Drain-source voltage: 60V Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET | auf Bestellung 1743 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN138W | Diotec Semiconductor | MOSFETs MOSFET, SOT-323, 50V, 0.22A, 150C, N | auf Bestellung 7720 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN138W | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 0.88A; 0.2W; SOT323 Kind of package: reel; tape Mounting: SMD Case: SOT323 Gate charge: 1.1nC Power dissipation: 0.2W Drain current: 0.22A Pulsed drain current: 0.88A On-state resistance: 6Ω Gate-source voltage: ±20V Drain-source voltage: 60V Polarisation: unipolar Kind of channel: enhancement Type of transistor: N-MOSFET | auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | Description: MOSFET N-CH 60V 500MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 60V, 0.5A, 150C, N | auf Bestellung 11211 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Electronics | Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | Description: MOSFET N-CH 60V 500MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V | auf Bestellung 3322 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | DIOTEC | Transistor N-Channel MOSFET; 60V; 10V; 5Ohm; 500mA; 300mW; -55°C~150°C; MMFTN170-DIO; MMFTN170 TMMFTN170 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||||||
| MMFTN170 | Diotec Semiconductor | Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN170 | Diotec Electronics | Trans MOSFET N-CH 60V 0.5A 3-Pin SOT-23 T/R | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN20 | Diotec Semiconductor | N-Channel Enhancement Mode | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN20 | Diotec Semiconductor | Description: MOSFET, SOT-23, 50V, 0.1A, N, 0. Packaging: Strip Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN20 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 50V, 0.1A, 150C, N | auf Bestellung 8245 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN20 | Diotec Semiconductor | N-Channel Enhancement Mode | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN20 | Diotec Semiconductor | Description: MOSFET N-CH 50V 100MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 15Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN210A | Diotec Semiconductor | Description: MOSFET SOT23 N 100V 0.32OHM 150C Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 1785 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN210A | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 7.2A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Pulsed drain current: 7.2A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 3.5nC | auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN210A | Diotec Semiconductor | Description: MOSFET SOT23 N 100V 0.32OHM 150C Input Capacitance (Ciss) (Max) @ Vds: 362 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN2316K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; Idm: 25A; 1.5W; SOT23; ESD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Mounting: SMD Type of transistor: N-MOSFET Case: SOT23 Gate charge: 6.5nC On-state resistance: 34mΩ Power dissipation: 1.5W Drain current: 6.2A Gate-source voltage: ±12V Pulsed drain current: 25A Drain-source voltage: 30V Polarisation: unipolar | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN2362 | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 0.08OHM 150C Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 1.25W Current - Continuous Drain (Id) @ 25°C: 3A FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN2362 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 60V, 3A, 150C, N | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN2362 | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 0.08OHM 150C Supplier Device Package: SOT-23-3 (TO-236) Power Dissipation (Max): 1.25W Current - Continuous Drain (Id) @ 25°C: 3A FET Type: N-Channel Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN2362-AQ | Diotec Semiconductor | Description: MOSFET SOT-23 N 60V 3A Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN2362-AQ | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 60V, 3A, 150C, N, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3018W | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.1A; 0.2W; SOT323 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Case: SOT323 On-state resistance: 8Ω Drain current: 0.1A Power dissipation: 0.2W Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: reel; tape | auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3018W | Diotec Semiconductor | Silicon N-Channel MOS Field Effect Transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3018W | Diotec Semiconductor AG | Description: MOSFET, SOT-323, N, 30V, 0.1A Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 10mA, 4V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13 pF @ 5 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3018W | Diotec Semiconductor | Silicon N-Channel MOS Field Effect Transistor | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3402 | Diotec Semiconductor | Description: MOSFET N-CH 30V 1.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3402 | Diotec Semiconductor | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3402 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 30V, 4A, 150C, N | auf Bestellung 29980 Stücke: Lieferzeit 38-42 Tag (e) |
| ||||||||||||||||||
| MMFTN3402 | Diotec Semiconductor | Trans MOSFET N-CH 30V 4A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3402 | Diotec Semiconductor | Description: MOSFET N-CH 30V 1.9A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V | auf Bestellung 1695 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3402 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; Idm: 15A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Pulsed drain current: 15A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 2682 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 30V, 5.6A, 150C, N | auf Bestellung 8502 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A | Diotec Semiconductor | Description: MOSFET SOT-23 N 30V 5.6A 0.023? Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 0 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3404A | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Pulsed drain current: 22A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 1207 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A | Diotec Semiconductor | MOSFETs (Field Effect Transistors) | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A | Diotec Semiconductor | Description: MOSFET SOT-23 N 30V 5.6A 0.023? Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 0 V | auf Bestellung 2120 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A-AQ | Diotec Semiconductor | Description: MOSFET SOT-23 N 30V 5.6A Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.6A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 0 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3404A-AQ | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 30V, 5.6A, 150C, N, AEC-Q101 | auf Bestellung 2882 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3404A-AQ | Diotec Semiconductor | Description: MOSFET, SOT-23, 30V, 5.6A, 0, 1. Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 744 pF @ 0 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 5.6A, 10V Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3422ASK | Diotec Semiconductor | Description: MOSFET SOT-23 N 30V 4.2A Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 505 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN3422K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.2A; Idm: 20A; 1.25W; SOT23 Mounting: SMD Polarisation: unipolar Drain current: 4.2A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT23 On-state resistance: 42mΩ Pulsed drain current: 20A Power dissipation: 1.25W | auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3422K | Diotec Semiconductor | Description: MOSFET, SOT-23, 30V, 4.2A, 0, 1. Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tj) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 387 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3422K | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, 30V, 4.2A, 150C, N | auf Bestellung 7250 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN3422K | Diotec Semiconductor | MOSFETs (Field Effect Transistors) | auf Bestellung 2540 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN3479KW | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.5A; Idm: 14A; 0.9W; SOT323 Mounting: SMD Power dissipation: 0.9W Gate charge: 2.8nC Polarisation: unipolar Drain current: 3.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: SOT323 On-state resistance: 95mΩ Pulsed drain current: 14A | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN4520 | Diotec Semiconductor | Description: MOSFET, SOT-23, 150V, 0.425A, 15 Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) | auf Bestellung 2932 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN4520 | Diotec Semiconductor | Description: MOSFET, SOT-23, 150V, 0.425A, 15 Input Capacitance (Ciss) (Max) @ Vds: 164 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 960mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 2932 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 2932 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN6001 | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 440mA; Idm: 1A; 530mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.44A Pulsed drain current: 1A Power dissipation: 0.53W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement | auf Bestellung 44943 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN6001 | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V | auf Bestellung 6845 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN6001 | Diotec Semiconductor | MOSFET MOSFET, SOT-23, 60V, 0.44A, 150C, N | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN6001 | Diotec Semiconductor | MOSFETs (Field Effect Transistor), SOT-23, 60V, 0.440A, N, 0.530W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN6001 | Diotec Semiconductor | Description: MOSFET SOT23 N 60V 2OHM 150C Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Power Dissipation (Max): 530mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 23.3 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN6190KDW | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN6190KDW | Diotec Semiconductor | MOSFET MOSFET, SOT-363, 30V, 1A, 150C, N | Produkt ist nicht verfügbar | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN620KD | DIOTEC SEMICONDUCTOR | Description: DIOTEC SEMICONDUCTOR - MMFTN620KD - Dual-MOSFET, Zweifach n-Kanal, 60 V, 350 mA, 1.5 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: - Dauer-Drainstrom Id, n-Kanal: 350mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-26 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.5ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 500mW Betriebstemperatur, max.: 150°C | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTN620KD | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN620KD-AQ | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA Input Capacitance (Ciss) (Max) @ Vds: 35pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-26 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN620KDW | Diotec Semiconductor | MOSFET MOSFET, SOT-363, 60V, 0.35A, 150C, N | auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||||||
| MMFTN620KDW-AQ | Diotec Semiconductor | Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTN620KDW-AQ | Diotec Semiconductor | Description: MOSFET, SOT-363, 60V, 0.35A, 0, Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 30V Rds On (Max) @ Id, Vgs: 2Ohm @ 100mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301 | Diotec Semiconductor | Description: MOSFET P-CH 20V 2.8A TO-236-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301 | DIOTEC | Description: DIOTEC - MMFTP2301 - Leistungs-MOSFET, p-Kanal, 20 V, 2.8 A, 0.1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTP2301 | Diotec Semiconductor | MOSFETs SOT-23, P, -20V, -2.8A, 0.1?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301 | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301-AQ | Diotec Semiconductor | MOSFETs SOT-23, P, -20V, -2.8A, 0.1?, 150C, AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301-AQ | Diotec Semiconductor | Description: MOSFET P-CH 20V 2.8A TO-236-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301-AQ | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.8A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.8A Pulsed drain current: -10A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301-AQ | Diotec Semiconductor | Description: MOSFET P-CH 20V 2.8A TO-236-3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 358 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2301-AQ | DIOTEC | Description: DIOTEC - MMFTP2301-AQ - Leistungs-MOSFET, p-Kanal, 20 V, 2.8 A, 0.1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2.8A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.25W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTP2307A | DIOTEC SEMICONDUCTOR | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -24A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -24A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 28.5nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2307A | Diotec Semiconductor | MOSFETs SOT-23, P, -20V, -6A, 29m?, 150C | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2307A | Diotec Semiconductor | Description: MOSFET P-CH 20V 6A TO-236-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2319 | Diotec Semiconductor | Trans MOSFET P-CH 40V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||||||
| MMFTP2319 | Diotec Semiconductor | Description: MOSFET P-CH 4.2A TO-236-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Power Dissipation (Max): 750mW Supplier Device Package: SOT-23-3 (TO-236) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2319 | Diotec Semiconductor | MOSFETs MOSFET, SOT-23, -40V, -4.2A, 150C, P | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MMFTP2319 | Diotec Semiconductor | Trans MOSFET P-CH 40V 2.4A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|