Produkte > A5G
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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A5G07H800W19NR3 | NXP Semiconductors | RF Power GaN Transistor | Produkt ist nicht verfügbar | |||||||||||||||
A5G07H800W19NR3 | NXP USA Inc. | Description: IC Packaging: Bulk Package / Case: OM-780-4S4S Mounting Type: Surface Mount Power - Output: 112W Gain: 18.3dB Technology: GaN Supplier Device Package: OM-780-4S4S Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 350 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G08H800W19NR3 | NXP USA Inc. | Description: IC Packaging: Bulk Package / Case: OM-780-4S4S Mounting Type: Surface Mount Frequency: 865MHz ~ 960MHz Power - Output: 112W Gain: 18.2dB Technology: GaN Supplier Device Package: OM-780-4S4S Voltage - Rated: 125 V Voltage - Test: 50 V Current - Test: 350 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G18H610W19NR3 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 1805 1880 MHz, 85 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G18H610W19NR3 | NXP USA Inc. | Description: IC Packaging: Bulk Package / Case: OM-780-4S4S Mounting Type: Surface Mount Frequency: 1.805GHz ~ 1.88GHz Power - Output: 85W Gain: 16.6dB Technology: GaN Supplier Device Package: OM-780-4S4S Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 300 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G21H605W19NR3 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2110 2200 MHz, 85 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G23H065NT4 | NXP USA Inc. | Description: AIRFAST RF POWER GAN TRANSISTOR, Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.4GHz Power - Output: 8.8W Gain: 15.5dB Supplier Device Package: 6-PDFN (7x6.5) Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 30 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G23H065NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2300 2400 MHz, 8.8 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G23H110NT4 | NXP USA Inc. | Description: RF MOSFET 48V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz ~ 2.4GHz Power - Output: 13.8W Gain: 17.9dB Supplier Device Package: 6-PDFN (7x6.5) Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 60 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G23H110NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2300 2400 MHz, 13.8 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H110N-2496 | NXP Semiconductors | RF Development Tools A5G26H110N 2496-2690 MHz Reference Circuit | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H110N-2496 | NXP Semiconductors | Air Fast RF Power GaN Transistor | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H110N-2496 | NXP USA Inc. | Description: RF MOSFET 48V 6DFN Packaging: Bulk Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.496GHz ~ 2.69GHz Power - Output: 15W Gain: 17.7dB Supplier Device Package: 6-PDFN (7x6.5) Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 50 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H110NT4 | NXP USA Inc. | Description: RF MOSFET GAN 48V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.496GHz ~ 2.69GHz Power - Output: 15W Gain: 17.7dB Technology: GaN Supplier Device Package: 6-PDFN (7x6.5) Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 50 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H110NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496 2690 MHz, 15 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G26H605W19NR3 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2496 2690 MHz, 85 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G26S004NT6 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2300 2690 MHz, 24 dBm Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G26S004NT6 | NXP USA Inc. | Description: RF MOSFET DFN Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
A5G26S008NT6 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 2300 2690 MHz, 27 dBm Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G26S008NT6 | NXP USA Inc. | Description: RF MOSFET GAN 48V 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.496GHz ~ 2.69GHz Power - Output: 27dBm Gain: 18.4dB Technology: GaN Supplier Device Package: 6-PDFN (4x4.5) Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 17 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G35H055NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400 3600 MHz, 7.6 W Avg., 48 V | auf Bestellung 11 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35H110N-3400 | NXP Semiconductors | RF Development Tools A5G35H110N 3400-3600 MHz Reference Circuit | auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35H110NT4 | NXP USA Inc. | Description: AIRFAST RF POWER GAN TRANSISTOR, | Produkt ist nicht verfügbar | |||||||||||||||
A5G35H110NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3700 MHz, 15.1 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G35H120NT2 | NXP USA Inc. | Description: RF MOSFET GAN 48V 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-PowerLDFN Mounting Type: Surface Mount Frequency: 3.3GHz ~ 3.7GHz Power - Output: 18W Gain: 14.1dB Technology: GaN Supplier Device Package: 10-DFN (7x10) Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 70 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G35H120NT2 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 18 W Avg., 48 V | auf Bestellung 90 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35S004N-3400 | NXP USA Inc. | Description: A5G35S004N 3400-4300 MHZ REFEREN | Produkt ist nicht verfügbar | |||||||||||||||
A5G35S004N-3400 | NXP Semiconductors | RF Development Tools A5G35S004N 3400-4300 MHz Reference Circuit | auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35S004NT6 | NXP USA Inc. | Description: AIRFAST RF POWER GAN TRANSISTOR, Packaging: Tape & Reel (TR) Package / Case: 6-LDFN Exposed Pad Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.3GHz Power - Output: 24.5dBm Gain: 16.9dB Supplier Device Package: 6-PDFN (4x4.5) Part Status: Active Voltage - Rated: 125 V Voltage - Test: 48 V Current - Test: 12 mA | Produkt ist nicht verfügbar | |||||||||||||||
A5G35S004NT6 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 4300 MHz, 24.5 dBm Avg., 48 V | auf Bestellung 29 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35S008N-3400 | NXP Semiconductors | RF Development Tools A5G35S008N 3400-3600 MHz Reference Circuit | auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G35S008NT6 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3300 3800 MHz, 27 dBm Avg., 48 V | auf Bestellung 53 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G37H110NT4 | NXP USA Inc. | Description: AIRFAST RF POWER GAN TRANSISTOR, | Produkt ist nicht verfügbar | |||||||||||||||
A5G37H110NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3600 3800 MHz, 13.5 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G38H045N-3700 | NXP Semiconductors | RF Development Tools A5G38H045N 3700-3980 MHz Reference Circuit | auf Bestellung 2 Stücke: Lieferzeit 14-28 Tag (e) |
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A5G38H045NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3400 4000 MHz, 5.4 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5G38H055NT4 | NXP Semiconductors | RF MOSFET Transistors Airfast RF Power GaN Transistor, 3700 3980 MHz, 7.6 W Avg., 48 V | Produkt ist nicht verfügbar | |||||||||||||||
A5GA | SOT153 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
A5GF4Y01 | auf Bestellung 2200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
A5GS-2401PI | Allied Components International | Description: 5G POE+ Packaging: Tape & Reel (TR) Inductance: 160µH Size / Dimension: 0.728" L x 0.492" W (18.50mm x 12.50mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Transformer Type: LAN 5G Base-T, Power over Ethernet (PoE) Turns Ratio - Primary:Secondary: 1CT:1CT Height - Seated (Max): 0.270" (6.85mm) | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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