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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF7301PBF Produktcode: 22639 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 20 Idd,A: 05.07.2015 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 660/20 Bem.: 2N JHGF: SMD |
auf Bestellung 65 Stück: Lieferzeit 21-28 Tag (e) |
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IRF7303PBF Produktcode: 113419 |
IR |
Transistoren > MOSFET N-CH Uds,V: 30 V Idd,A: 3,9 A Rds(on), Ohm: 0,05 Ohm Ciss, pF/Qg, nC: 520/25 Bem.: Два транзистори в одному корпусі JHGF: SMD |
auf Bestellung 185 Stück: Lieferzeit 21-28 Tag (e) |
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IRF7304 Produktcode: 34673 |
IR |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SO-8 Uds,V: 20 Id,A: 4.7 Rds(on),Om: 0.09 Ciss, pF/Qg, nC: 610/22 Gebr.: 2P /: SMD |
auf Bestellung 45 Stück: Lieferzeit 21-28 Tag (e) |
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IRF7306 Produktcode: 3760 |
IR |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SO-8 Uds,V: 30 Id,A: 4 Rds(on),Om: 0.1 Ciss, pF/Qg, nC: 440/25 Gebr.: 2P /: SMD |
verfügbar: 12 Stück
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IRF7307TRPBF Produktcode: 40384 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 20 Idd,A: 04.01.2015 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 660/20 Bem.: N/P Kanal JHGF: SMD |
auf Bestellung 65 Stück: Lieferzeit 21-28 Tag (e) |
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IRF7309PBF Produktcode: 36562 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 30 Idd,A: 4.7(3.5) Rds(on), Ohm: 0.05(0.1) Ciss, pF/Qg, nC: 520/25 Bem.: N+P JHGF: SMD |
verfügbar: 466 Stück
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IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 30 Idd,A: 4 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 520/25 Bem.: P/N Kanal 2 in 1 JHGF: SMD ZCODE: 8541290010 |
verfügbar: 12 Stück
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IRF730PBF Produktcode: 123226 |
SILI |
Transistoren > MOSFET N-CH Uds,V: 400 V Idd,A: 5,5 A Rds(on), Ohm: 1 Ohm Ciss, pF/Qg, nC: 700/38 JHGF: THT |
auf Bestellung 99 Stück: Lieferzeit 21-28 Tag (e) |
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RF7303SR | RFMD | QFN |
auf Bestellung 119 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF730 | Siliconix |
N-MOSFET 4.5A 400V 75W 1Ω IRF730 TIRF730 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 187 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF730 | Harris Corporation |
Description: N-CHANNEL, MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
auf Bestellung 24533 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7301PBF | International Rectifier/Infineon | 2N-канальний ПТ; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8 |
auf Bestellung 37 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7301PBF | IR | Транз. Пол. ММ 2N-HEXFET SO8 Udss=20V Id=5,2A P=2W Rds=0,05Ohm |
auf Bestellung 268 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7301TR | Infineon |
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 932 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7301TR | UMW |
Transistor 2xN-Channel MOSFET; 20V; 12V; 50mOhm; 5,2A; 2W; -55°C ~ 150°C; Equivalent: IRF7301; IRF7301TR; SP001571442; SP001561974; IRF7301TR UMW TIRF7301 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7301TR | Infineon |
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 155 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7303TR | Infineon |
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; IRF7303 TIRF7303 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 74 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7303TR | UMW |
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303TR UMW TIRF7303 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7303TRPBF | Infineon Technologies |
Description: MOSFET 2N-CH 30V 4.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 3932 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7303TRPBF | IR | Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=30V; Id=4,9A; Pdmax=2W; Rds=0,05 Ohm |
auf Bestellung 1486 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7303TRPBF | Infineon Technologies | Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7303TRPBF | International Rectifier/Infineon | 2N-канальний ПТ; Udss, В = 30; Id = 4,9 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 25; Qg, нКл = 25 @ 10 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7303TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 |
auf Bestellung 10775 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7303TRPBFXTMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PG-DSO-8-902 Part Status: Active |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7304 | International Rectifier |
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7304 | International Rectifier |
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7304PBF | International Rectifier/Infineon | 2P-канальний ПТ; Udss, В = 20; Id = 4,3 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; SOICN-8 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7304TR | UMW |
Transistor 2xP-Channel MOSFET; 20V; 12V; 140mOhm; 4,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7304; IRF7304TR; SP001561936; SP001565312; IRF7304TR UMW TIRF7304 UMW Anzahl je Verpackung: 25 Stücke |
auf Bestellung 175 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7304TRPBF | International Rectifier/Infineon | 2P-канальний ПТ; Udss, В = 20; Id = 4,3; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Ugs(th) = 0,7 В @ 250 мкА; ; Р, Вт = 2; Тексп, °C = -55...+155; Тип монт. = smd; SOICN-8 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7306PBF | International Rectifier/Infineon | 2P-канальний ПТ; Udss, В = 30; Id = 3,6 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 440 @ 25; Qg, нКл = 25 @ 10 В; Rds = 100 мОм @ 1,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8 |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7306TR | Infineon |
2xP-MOSFET -3,6A -30V 2W 0.1Ω IRF7306 TIRF7306 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 245 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7306TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 791 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7306TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 791 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7306TRPBF | Infineon Technologies | MOSFET MOSFT DUAL PCh -30V 3.6A |
auf Bestellung 7694 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7306TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 3.6A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 21485 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7306TRPBF | Infineon Technologies |
Description: MOSFET 2P-CH 30V 3.6A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.6A Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7307 | IR | Транз. Пол. ММ 1N-1P-HEXFET logik SO8 Udss=+-20V; Id=4,3A; Id=-3.6A Pdmax=1,4W; Rds=0,05 Ohm |
auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7307PBF | International Rectifier/Infineon | Транзистор польовий N+P; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; td(on)+tr = 9; td(off)+tf = 32; Id2 = 4, |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7307TRPBF | International Rectifier/Infineon | N-канальный и P-канальный ПТ; Udss, В = 20; Id = 5,2 А; Ciss, пФ @ Uds, В = 660 пФ @ 15 В; Qg, нКл = 20 @ 4.5 В; Rds = 50 мОм @ 2.6 A, 4.5 В; Ugs(th) = 700 мВ @ 250 мкА; Р, Вт = 2 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309 | Infineon |
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7309PBF | IR | Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Type of transistor: N/P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4/-3A Power dissipation: 1.4W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.05/0.1Ω Mounting: SMD Kind of package: reel Kind of channel: enhanced |
auf Bestellung 3831 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 4.0A |
auf Bestellung 593 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 20104 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF7309TRPBF | International Rectifier/Infineon | Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8 |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | Infineon Technologies | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730A | IR | Транз. Пол. БМ N-HEXFET TO220AB Udss=400V; Id=5,5A; Pdmax=74W; Rds=1 Ohm |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF730APBF | Vishay Semiconductors | MOSFET 400V N-CH HEXFET |
auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730APBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 587 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730APBF-BE3 | Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 994 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730APBF-BE3 | Vishay / Siliconix | MOSFET 400V N-CH HEXFET |
auf Bestellung 1717 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730ASPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730ASPBF | Vishay Semiconductors | MOSFET 400V N-CH HEXFET D2-PA |
auf Bestellung 864 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730ASTRLPBF | Vishay Semiconductors | MOSFET 400V N-CH HEXFET D2-PA |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730ASTRLPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 5.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V Power Dissipation (Max): 73W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 468249 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730BPBF | Vishay Siliconix |
Description: MOSFET N-CH 400V 6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V |
auf Bestellung 959 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730BPBF | Vishay Semiconductors | MOSFET 400V 1ohm@10V 5.5A N/Ch |
auf Bestellung 692 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF730PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 3.5A Power dissipation: 74W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 403 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7301PBF Produktcode: 22639 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 05.07.2015
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 660/20
Bem.: 2N
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 05.07.2015
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 660/20
Bem.: 2N
JHGF: SMD
auf Bestellung 65 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.4 EUR |
IRF7303PBF Produktcode: 113419 |
Hersteller: IR
Transistoren > MOSFET N-CH
Uds,V: 30 V
Idd,A: 3,9 A
Rds(on), Ohm: 0,05 Ohm
Ciss, pF/Qg, nC: 520/25
Bem.: Два транзистори в одному корпусі
JHGF: SMD
Transistoren > MOSFET N-CH
Uds,V: 30 V
Idd,A: 3,9 A
Rds(on), Ohm: 0,05 Ohm
Ciss, pF/Qg, nC: 520/25
Bem.: Два транзистори в одному корпусі
JHGF: SMD
auf Bestellung 185 Stück:
Lieferzeit 21-28 Tag (e)IRF7304 Produktcode: 34673 |
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 20
Id,A: 4.7
Rds(on),Om: 0.09
Ciss, pF/Qg, nC: 610/22
Gebr.: 2P
/: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 20
Id,A: 4.7
Rds(on),Om: 0.09
Ciss, pF/Qg, nC: 610/22
Gebr.: 2P
/: SMD
auf Bestellung 45 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.57 EUR |
10+ | 0.42 EUR |
IRF7306 Produktcode: 3760 |
Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 4
Rds(on),Om: 0.1
Ciss, pF/Qg, nC: 440/25
Gebr.: 2P
/: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 4
Rds(on),Om: 0.1
Ciss, pF/Qg, nC: 440/25
Gebr.: 2P
/: SMD
verfügbar: 12 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.7 EUR |
10+ | 0.67 EUR |
IRF7307TRPBF Produktcode: 40384 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 04.01.2015
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 660/20
Bem.: N/P Kanal
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 20
Idd,A: 04.01.2015
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 660/20
Bem.: N/P Kanal
JHGF: SMD
auf Bestellung 65 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.38 EUR |
10+ | 0.34 EUR |
IRF7309PBF Produktcode: 36562 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
verfügbar: 466 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.57 EUR |
10+ | 0.42 EUR |
IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.35 EUR |
IRF730PBF Produktcode: 123226 |
Hersteller: SILI
Transistoren > MOSFET N-CH
Uds,V: 400 V
Idd,A: 5,5 A
Rds(on), Ohm: 1 Ohm
Ciss, pF/Qg, nC: 700/38
JHGF: THT
Transistoren > MOSFET N-CH
Uds,V: 400 V
Idd,A: 5,5 A
Rds(on), Ohm: 1 Ohm
Ciss, pF/Qg, nC: 700/38
JHGF: THT
auf Bestellung 99 Stück:
Lieferzeit 21-28 Tag (e)IRF730 |
auf Bestellung 187 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.59 EUR |
IRF730 |
Hersteller: Harris Corporation
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 24533 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
243+ | 2.01 EUR |
IRF7301PBF |
Hersteller: International Rectifier/Infineon
2N-канальний ПТ; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
2N-канальний ПТ; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 1.74 EUR |
10+ | 1.5 EUR |
100+ | 1.32 EUR |
IRF7301PBF |
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET SO8 Udss=20V Id=5,2A P=2W Rds=0,05Ohm
Транз. Пол. ММ 2N-HEXFET SO8 Udss=20V Id=5,2A P=2W Rds=0,05Ohm
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.99 EUR |
10+ | 2.64 EUR |
IRF7301TR |
Hersteller: Infineon
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301
Anzahl je Verpackung: 10 Stücke
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301
Anzahl je Verpackung: 10 Stücke
auf Bestellung 932 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.13 EUR |
IRF7301TR |
Hersteller: UMW
Transistor 2xN-Channel MOSFET; 20V; 12V; 50mOhm; 5,2A; 2W; -55°C ~ 150°C; Equivalent: IRF7301; IRF7301TR; SP001571442; SP001561974; IRF7301TR UMW TIRF7301 UMW
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 20V; 12V; 50mOhm; 5,2A; 2W; -55°C ~ 150°C; Equivalent: IRF7301; IRF7301TR; SP001571442; SP001561974; IRF7301TR UMW TIRF7301 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.85 EUR |
IRF7301TR |
Hersteller: Infineon
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301
Anzahl je Verpackung: 10 Stücke
2xN-MOSFET 5.2A 20V 2W 0.05Ω IRF7301 smd TIRF7301
Anzahl je Verpackung: 10 Stücke
auf Bestellung 155 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.13 EUR |
IRF7303TR |
Hersteller: Infineon
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; IRF7303 TIRF7303
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; IRF7303 TIRF7303
Anzahl je Verpackung: 25 Stücke
auf Bestellung 74 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.1 EUR |
IRF7303TR |
Hersteller: UMW
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303TR UMW TIRF7303 UMW
Anzahl je Verpackung: 25 Stücke
Transistor 2xN-Channel MOSFET; 30V; 20V; 80mOhm; 4,9A; 2W; -55°C ~ 150°C; Equivalent: IRF7303; IRF7303TR; SP001577432; SP001563422; IRF7303TR UMW TIRF7303 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.82 EUR |
IRF7303TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 30V 4.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 3932 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
16+ | 1.14 EUR |
100+ | 0.89 EUR |
500+ | 0.75 EUR |
1000+ | 0.61 EUR |
2000+ | 0.58 EUR |
IRF7303TRPBF |
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=30V; Id=4,9A; Pdmax=2W; Rds=0,05 Ohm
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=30V; Id=4,9A; Pdmax=2W; Rds=0,05 Ohm
auf Bestellung 1486 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.99 EUR |
10+ | 2.64 EUR |
IRF7303TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
Trans MOSFET N-CH Si 30V 4.9A 8-Pin SOIC T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)IRF7303TRPBF |
Hersteller: International Rectifier/Infineon
2N-канальний ПТ; Udss, В = 30; Id = 4,9 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 25; Qg, нКл = 25 @ 10 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
2N-канальний ПТ; Udss, В = 30; Id = 4,9 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 25; Qg, нКл = 25 @ 10 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 1.55 EUR |
10+ | 1.34 EUR |
100+ | 1.18 EUR |
IRF7303TRPBFXTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
auf Bestellung 10775 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.39 EUR |
16+ | 1.14 EUR |
100+ | 0.89 EUR |
500+ | 0.75 EUR |
1000+ | 0.61 EUR |
2000+ | 0.58 EUR |
IRF7303TRPBFXTMA1 |
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Part Status: Active
Description: MOSFET 2N-CH 30V 4.9A 8DSO-902
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PG-DSO-8-902
Part Status: Active
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.58 EUR |
8000+ | 0.55 EUR |
IRF7304 |
Hersteller: International Rectifier
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304
Anzahl je Verpackung: 50 Stücke
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304
Anzahl je Verpackung: 50 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 3.17 EUR |
IRF7304 |
Hersteller: International Rectifier
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304
Anzahl je Verpackung: 50 Stücke
P-MOSFET 4.3A 20V 2,0W 0.09Ω IRF7304 TIRF7304
Anzahl je Verpackung: 50 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 3.52 EUR |
IRF7304PBF |
Hersteller: International Rectifier/Infineon
2P-канальний ПТ; Udss, В = 20; Id = 4,3 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; SOICN-8
2P-канальний ПТ; Udss, В = 20; Id = 4,3 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; SOICN-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.54 EUR |
10+ | 0.94 EUR |
100+ | 0.82 EUR |
IRF7304TR |
Hersteller: UMW
Transistor 2xP-Channel MOSFET; 20V; 12V; 140mOhm; 4,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7304; IRF7304TR; SP001561936; SP001565312; IRF7304TR UMW TIRF7304 UMW
Anzahl je Verpackung: 25 Stücke
Transistor 2xP-Channel MOSFET; 20V; 12V; 140mOhm; 4,3A; 2W; -55°C ~ 150°C; Equivalent: IRF7304; IRF7304TR; SP001561936; SP001565312; IRF7304TR UMW TIRF7304 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 175 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.75 EUR |
IRF7304TRPBF |
Hersteller: International Rectifier/Infineon
2P-канальний ПТ; Udss, В = 20; Id = 4,3; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Ugs(th) = 0,7 В @ 250 мкА; ; Р, Вт = 2; Тексп, °C = -55...+155; Тип монт. = smd; SOICN-8
2P-канальний ПТ; Udss, В = 20; Id = 4,3; Ciss, пФ @ Uds, В = 610 @ 15; Qg, нКл = 22 @ 4,5 В; Rds = 90 мОм @ 2,2 A; 4,5 В; Ugs(th) = 0,7 В @ 250 мкА; ; Р, Вт = 2; Тексп, °C = -55...+155; Тип монт. = smd; SOICN-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.54 EUR |
10+ | 0.81 EUR |
100+ | 0.71 EUR |
IRF7306PBF |
Hersteller: International Rectifier/Infineon
2P-канальний ПТ; Udss, В = 30; Id = 3,6 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 440 @ 25; Qg, нКл = 25 @ 10 В; Rds = 100 мОм @ 1,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
2P-канальний ПТ; Udss, В = 30; Id = 3,6 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 440 @ 25; Qg, нКл = 25 @ 10 В; Rds = 100 мОм @ 1,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 1.44 EUR |
10+ | 1.24 EUR |
100+ | 1.09 EUR |
IRF7306TR |
Hersteller: Infineon
2xP-MOSFET -3,6A -30V 2W 0.1Ω IRF7306 TIRF7306
Anzahl je Verpackung: 10 Stücke
2xP-MOSFET -3,6A -30V 2W 0.1Ω IRF7306 TIRF7306
Anzahl je Verpackung: 10 Stücke
auf Bestellung 245 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.76 EUR |
IRF7306TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 791 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
82+ | 0.88 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
500+ | 0.59 EUR |
IRF7306TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 791 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
82+ | 0.88 EUR |
112+ | 0.64 EUR |
118+ | 0.61 EUR |
500+ | 0.59 EUR |
IRF7306TRPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT DUAL PCh -30V 3.6A
MOSFET MOSFT DUAL PCh -30V 3.6A
auf Bestellung 7694 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.47 EUR |
10+ | 1.2 EUR |
100+ | 0.93 EUR |
500+ | 0.78 EUR |
1000+ | 0.64 EUR |
2000+ | 0.59 EUR |
4000+ | 0.58 EUR |
IRF7306TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 21485 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.46 EUR |
15+ | 1.19 EUR |
100+ | 0.93 EUR |
500+ | 0.79 EUR |
1000+ | 0.64 EUR |
2000+ | 0.6 EUR |
IRF7306TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 30V 3.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.6 EUR |
8000+ | 0.57 EUR |
12000+ | 0.55 EUR |
IRF7307 |
Hersteller: IR
Транз. Пол. ММ 1N-1P-HEXFET logik SO8 Udss=+-20V; Id=4,3A; Id=-3.6A Pdmax=1,4W; Rds=0,05 Ohm
Транз. Пол. ММ 1N-1P-HEXFET logik SO8 Udss=+-20V; Id=4,3A; Id=-3.6A Pdmax=1,4W; Rds=0,05 Ohm
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.73 EUR |
10+ | 2.42 EUR |
IRF7307PBF |
Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; td(on)+tr = 9; td(off)+tf = 32; Id2 = 4,
Транзистор польовий N+P; Udss, В = 20; Id = 5,2 А; Ptot, Вт = 2; Тип монт. = smd; Ciss, пФ @ Uds, В = 660 @ 15; Qg, нКл = 20 @ 4,5 В; Rds = 50 мОм @ 2,6 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 0,7 В @ 250 мкА; td(on)+tr = 9; td(off)+tf = 32; Id2 = 4,
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.89 EUR |
10+ | 0.76 EUR |
100+ | 0.67 EUR |
IRF7307TRPBF |
Hersteller: International Rectifier/Infineon
N-канальный и P-канальный ПТ; Udss, В = 20; Id = 5,2 А; Ciss, пФ @ Uds, В = 660 пФ @ 15 В; Qg, нКл = 20 @ 4.5 В; Rds = 50 мОм @ 2.6 A, 4.5 В; Ugs(th) = 700 мВ @ 250 мкА; Р, Вт = 2 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
N-канальный и P-канальный ПТ; Udss, В = 20; Id = 5,2 А; Ciss, пФ @ Uds, В = 660 пФ @ 15 В; Qg, нКл = 20 @ 4.5 В; Rds = 50 мОм @ 2.6 A, 4.5 В; Ugs(th) = 700 мВ @ 250 мкА; Р, Вт = 2 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 4.66 EUR |
10+ | 4.01 EUR |
100+ | 3.53 EUR |
IRF7309 |
Hersteller: Infineon
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.91 EUR |
IRF7309PBF |
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2 EUR |
10+ | 1.77 EUR |
IRF7309TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4/-3A
Power dissipation: 1.4W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.05/0.1Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
auf Bestellung 3831 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
73+ | 0.99 EUR |
96+ | 0.75 EUR |
148+ | 0.48 EUR |
157+ | 0.46 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.56 EUR |
8000+ | 0.54 EUR |
12000+ | 0.51 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT DUAL N/PCh 30V 4.0A
MOSFET MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 593 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.34 EUR |
10+ | 1.03 EUR |
100+ | 0.81 EUR |
500+ | 0.71 EUR |
1000+ | 0.6 EUR |
2000+ | 0.54 EUR |
4000+ | 0.53 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20104 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.37 EUR |
16+ | 1.11 EUR |
100+ | 0.86 EUR |
500+ | 0.73 EUR |
1000+ | 0.6 EUR |
2000+ | 0.56 EUR |
IRF7309TRPBF |
Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.89 EUR |
10+ | 0.77 EUR |
100+ | 0.68 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)IRF730A |
Hersteller: IR
Транз. Пол. БМ N-HEXFET TO220AB Udss=400V; Id=5,5A; Pdmax=74W; Rds=1 Ohm
Транз. Пол. БМ N-HEXFET TO220AB Udss=400V; Id=5,5A; Pdmax=74W; Rds=1 Ohm
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.67 EUR |
10+ | 2.36 EUR |
IRF730APBF |
Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET
MOSFET 400V N-CH HEXFET
auf Bestellung 1298 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.87 EUR |
10+ | 2.43 EUR |
100+ | 1.99 EUR |
250+ | 1.9 EUR |
500+ | 1.7 EUR |
1000+ | 1.46 EUR |
2000+ | 1.39 EUR |
IRF730APBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 587 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.99 EUR |
50+ | 2.41 EUR |
100+ | 1.98 EUR |
500+ | 1.68 EUR |
IRF730APBF-BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.99 EUR |
50+ | 2.41 EUR |
100+ | 1.98 EUR |
500+ | 1.68 EUR |
IRF730APBF-BE3 |
Hersteller: Vishay / Siliconix
MOSFET 400V N-CH HEXFET
MOSFET 400V N-CH HEXFET
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.01 EUR |
10+ | 2.09 EUR |
100+ | 1.78 EUR |
250+ | 1.74 EUR |
500+ | 1.56 EUR |
1000+ | 1.34 EUR |
2000+ | 1.32 EUR |
IRF730ASPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.52 EUR |
50+ | 2.02 EUR |
100+ | 1.66 EUR |
500+ | 1.5 EUR |
IRF730ASPBF |
Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET D2-PA
MOSFET 400V N-CH HEXFET D2-PA
auf Bestellung 864 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.59 EUR |
10+ | 2.97 EUR |
100+ | 2.38 EUR |
250+ | 2.2 EUR |
500+ | 1.99 EUR |
1000+ | 1.7 EUR |
2000+ | 1.62 EUR |
IRF730ASTRLPBF |
Hersteller: Vishay Semiconductors
MOSFET 400V N-CH HEXFET D2-PA
MOSFET 400V N-CH HEXFET D2-PA
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.61 EUR |
10+ | 2.99 EUR |
100+ | 2.39 EUR |
250+ | 2.22 EUR |
500+ | 1.8 EUR |
800+ | 1.62 EUR |
4800+ | 1.57 EUR |
IRF730ASTRLPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: MOSFET N-CH 400V 5.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.57 EUR |
10+ | 2.97 EUR |
100+ | 2.36 EUR |
IRF730B |
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.75A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 468249 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
952+ | 0.52 EUR |
IRF730BPBF |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
Description: MOSFET N-CH 400V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 311 pF @ 100 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
13+ | 1.45 EUR |
100+ | 1.13 EUR |
500+ | 0.96 EUR |
IRF730BPBF |
Hersteller: Vishay Semiconductors
MOSFET 400V 1ohm@10V 5.5A N/Ch
MOSFET 400V 1ohm@10V 5.5A N/Ch
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.78 EUR |
10+ | 1.46 EUR |
100+ | 1.14 EUR |
500+ | 0.96 EUR |
1000+ | 0.74 EUR |
5000+ | 0.7 EUR |
IRF730PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 3.5A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 3.5A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 403 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.24 EUR |
78+ | 0.92 EUR |
99+ | 0.73 EUR |
105+ | 0.68 EUR |
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