Suchergebnisse für "PSMN" : > 60

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PSMN004-60B,118 PSMN004-60B,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808143689850E259&compId=PSMN004-60B.pdf?ci_sign=cda35da8611d2137a5ec894d651d996635046dd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.58 EUR
11+6.69 EUR
25+6.03 EUR
Mindestbestellmenge: 10
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PSMN004-60B,118 PSMN004-60B,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808143689850E259&compId=PSMN004-60B.pdf?ci_sign=cda35da8611d2137a5ec894d651d996635046dd7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.58 EUR
11+6.69 EUR
25+6.03 EUR
Mindestbestellmenge: 10
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PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.46 EUR
11+6.58 EUR
Mindestbestellmenge: 10
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PSMN009-100P,127 PSMN009-100P,127 NEXPERIA PSMN009-100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 781 Stücke:
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10+7.46 EUR
11+6.58 EUR
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PSMN009-100P,127 NXP Semiconductors PSMN009-100P.pdf Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
129+4.23 EUR
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PSMN011-100YSFX PSMN011-100YSFX Nexperia psmn011-100ysf.pdf Trans MOSFET N-CH 100V 79.5A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 43500 Stücke:
Lieferzeit 14-21 Tag (e)
253+2.15 EUR
500+1.97 EUR
1000+1.78 EUR
10000+1.61 EUR
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PSMN011-60HLX PSMN011-60HLX Nexperia PSMN011-60HL.pdf MOSFETs SOT1205 2NCH 60V 35A
auf Bestellung 1771 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.12 EUR
10+2.13 EUR
100+1.78 EUR
1000+1.24 EUR
1500+1.11 EUR
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PSMN011-60MLX PSMN011-60MLX Nexperia USA Inc. PSMN011-60ML.pdf Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
13+1.46 EUR
50+1.08 EUR
100+0.96 EUR
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PSMN011-60MSX PSMN011-60MSX NEXPERIA PSMN011-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
44+1.64 EUR
52+1.4 EUR
Mindestbestellmenge: 34
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PSMN011-60MSX PSMN011-60MSX NEXPERIA PSMN011-60MS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1299 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.14 EUR
44+1.64 EUR
52+1.4 EUR
Mindestbestellmenge: 34
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PSMN011-80YS,115 PSMN011-80YS,115 Nexperia USA Inc. PSMN011-80YS.pdf Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 4500 Stücke:
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1500+1.02 EUR
3000+0.94 EUR
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PSMN011-80YS,115 PSMN011-80YS,115 Nexperia USA Inc. PSMN011-80YS.pdf Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 5154 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
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PSMN011-80YS,115 PSMN011-80YS,115 Nexperia PSMN011-80YS.pdf MOSFETs SOT669 N-CH 80V 67A
auf Bestellung 13042 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.39 EUR
10+1.66 EUR
100+1.25 EUR
500+1.04 EUR
1000+0.86 EUR
1500+0.81 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808167AEDA0DA259&compId=PSMN012-100YS.pdf?ci_sign=6cfca4751690a5844026e54e13f9643cb722a6e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.72 EUR
21+3.52 EUR
100+2.46 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808167AEDA0DA259&compId=PSMN012-100YS.pdf?ci_sign=6cfca4751690a5844026e54e13f9643cb722a6e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1370 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.72 EUR
21+3.52 EUR
100+2.46 EUR
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PSMN012-80BS,118 PSMN012-80BS,118 Nexperia PSMN012-80BS.pdf MOSFETs SOT404 N-CH 80V 74A
auf Bestellung 5671 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.54 EUR
10+2.92 EUR
50+2.22 EUR
100+2.01 EUR
500+1.5 EUR
800+1.39 EUR
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PSMN012-80PS,127 PSMN012-80PS,127 NEXPERIA PSMN012-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
Mindestbestellmenge: 44
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PSMN012-80PS,127 PSMN012-80PS,127 NEXPERIA PSMN012-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.63 EUR
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PSMN013-100BS,118 PSMN013-100BS,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808146A1BEE3E259&compId=PSMN013-100BS.pdf?ci_sign=1f0c2bc713900b33e56b048a7cf0da6713a9a3e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.83 EUR
21+3.46 EUR
25+3.2 EUR
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PSMN013-100BS,118 PSMN013-100BS,118 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808146A1BEE3E259&compId=PSMN013-100BS.pdf?ci_sign=1f0c2bc713900b33e56b048a7cf0da6713a9a3e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1394 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.83 EUR
21+3.46 EUR
25+3.2 EUR
Mindestbestellmenge: 19
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PSMN013-30MLC,115 PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1412 Stücke:
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61+1.17 EUR
68+1.05 EUR
74+0.98 EUR
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PSMN013-30MLC,115 PSMN013-30MLC,115 NEXPERIA PSMN013-30MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1412 Stücke:
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61+1.17 EUR
68+1.05 EUR
74+0.98 EUR
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PSMN013-30MLC,115 PSMN013-30MLC,115 Nexperia PSMN013-30MLC.pdf MOSFETs SOT1210 N-CH 30V 39A
auf Bestellung 13382 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.08 EUR
10+0.63 EUR
100+0.48 EUR
500+0.4 EUR
1000+0.29 EUR
1500+0.25 EUR
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PSMN013-30MLC,115 PSMN013-30MLC,115 Nexperia USA Inc. PSMN013-30MLC.pdf Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.87 EUR
50+0.63 EUR
100+0.56 EUR
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED780816B9D38EB6259&compId=PSMN013-30YLC.pdf?ci_sign=dc28ec1f13a845fe20f8ee80904e43ccff6023a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
51+1.42 EUR
56+1.29 EUR
Mindestbestellmenge: 44
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED780816B9D38EB6259&compId=PSMN013-30YLC.pdf?ci_sign=dc28ec1f13a845fe20f8ee80904e43ccff6023a3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 410 Stücke:
Lieferzeit 7-14 Tag (e)
44+1.66 EUR
51+1.42 EUR
56+1.29 EUR
Mindestbestellmenge: 44
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PSMN013-40VLDX PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.03 EUR
27+2.66 EUR
100+2.46 EUR
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PSMN013-40VLDX PSMN013-40VLDX NEXPERIA PSMN013-40VLD.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: NextPowerS3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.03 EUR
27+2.66 EUR
100+2.46 EUR
Mindestbestellmenge: 18
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1365 Stücke:
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1365 Stücke:
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27+2.72 EUR
36+2.03 EUR
100+1.83 EUR
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PSMN013-60YLX PSMN013-60YLX Nexperia PSMN013-60YL.pdf MOSFETs SOT669 N-CH 60V 53A
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2+1.59 EUR
10+1.02 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.55 EUR
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PSMN013-80YS,115 PSMN013-80YS,115 Nexperia USA Inc. PSMN013-80YS.pdf Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 295 Stücke:
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PSMN014-40YS,115 PSMN014-40YS,115 Nexperia PSMN014-40YS.pdf MOSFETs SOT669 N-CH 40V 46A
auf Bestellung 59096 Stücke:
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2+1.42 EUR
10+0.8 EUR
100+0.63 EUR
500+0.56 EUR
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1500+0.39 EUR
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PSMN014-80YLX PSMN014-80YLX Nexperia 4387077819768298psmn014-80yl.pdf Trans MOSFET N-CH 80V 62A 5-Pin(4+Tab) LFPAK T/R
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PSMN014-80YLX PSMN014-80YLX Nexperia 4387077819768298psmn014-80yl.pdf Trans MOSFET N-CH 80V 62A 5-Pin(4+Tab) LFPAK T/R
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PSMN015-100YSFX PSMN015-100YSFX Nexperia PSMN015-100YSF.pdf MOSFETs SOT669 100V 55A N-CH
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500+0.76 EUR
1000+0.69 EUR
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PSMN015-110P,127 NXP Semiconductors PSMN015-110P.pdf Trans MOSFET N-CH 110V 75A 3-Pin(3+Tab) TO-220AB Tube
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PSMN015-110P,127 NXP Semiconductors PSMN015-110P.pdf Trans MOSFET N-CH 110V 75A 3-Pin(3+Tab) TO-220AB Tube
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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 642 Stücke:
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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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PSMN015-60BS,118 PSMN015-60BS,118 Nexperia USA Inc. PSMN015-60BS.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 10400 Stücke:
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PSMN015-60BS,118 PSMN015-60BS,118 Nexperia USA Inc. PSMN015-60BS.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 11732 Stücke:
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PSMN015-60PS,127 PSMN015-60PS,127 NEXPERIA PSMN015-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 234 Stücke:
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11+7.12 EUR
14+5.35 EUR
100+4.8 EUR
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PSMN015-60PS,127 PSMN015-60PS,127 NEXPERIA PSMN015-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
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11+7.12 EUR
14+5.35 EUR
100+4.8 EUR
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PSMN016-100PS,127 PSMN016-100PS,127 NEXPERIA PSMN016-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 97 Stücke:
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PSMN016-100PS,127 PSMN016-100PS,127 NEXPERIA PSMN016-100PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
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16+4.49 EUR
50+3.86 EUR
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PSMN017-30EL,127 PSMN017-30EL,127 Nexperia 3012725411848701psmn017-30el.pdf Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 540 Stücke:
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500+1.09 EUR
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PSMN017-30LL,115 NXP Semiconductors Trans MOSFET N-CH 30V 15A 8-Pin QFN EP T/R
auf Bestellung 1077 Stücke:
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1000+0.7 EUR
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PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
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27+2.72 EUR
28+2.56 EUR
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PSMN017-30PL,127 NXP Semiconductors PSMN017-30PL.pdf Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 15800 Stücke:
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500+2.28 EUR
1000+2.01 EUR
10000+1.73 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED780817334C8B30259&compId=PSMN017-60YS.pdf?ci_sign=e16bb8c02a5d7c1fa26984fb94c590bcc6ff7b60 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1461 Stücke:
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35+2.06 EUR
41+1.76 EUR
50+1.43 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED780817334C8B30259&compId=PSMN017-60YS.pdf?ci_sign=e16bb8c02a5d7c1fa26984fb94c590bcc6ff7b60 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1461 Stücke:
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35+2.06 EUR
41+1.76 EUR
50+1.43 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 Nexperia USA Inc. PSMN017-60YS.pdf Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 3000 Stücke:
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1500+0.63 EUR
3000+0.58 EUR
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PSMN017-60YS,115 PSMN017-60YS,115 Nexperia USA Inc. PSMN017-60YS.pdf Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 6641 Stücke:
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7+2.68 EUR
11+1.68 EUR
50+1.26 EUR
100+1.12 EUR
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PSMN017-80PS,127 PSMN017-80PS,127 NEXPERIA PSMN017-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
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20+3.69 EUR
22+3.32 EUR
25+2.92 EUR
Mindestbestellmenge: 20
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PSMN018-100ESFQ NXP Semiconductors PSMN018-100ESF.pdf PSMN018-100ESFQ
auf Bestellung 4976 Stücke:
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366+1.48 EUR
500+1.29 EUR
1000+1.14 EUR
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PSMN018-80YS,115 PSMN018-80YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808175BDCBE28259&compId=PSMN018-80YS.pdf?ci_sign=a7b348567575ce8804f2dc4c84d0f0ae22534af5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4479 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
32+2.26 EUR
35+2.06 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PSMN018-80YS,115 PSMN018-80YS,115 NEXPERIA pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808175BDCBE28259&compId=PSMN018-80YS.pdf?ci_sign=a7b348567575ce8804f2dc4c84d0f0ae22534af5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4479 Stücke:
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19+3.95 EUR
32+2.26 EUR
35+2.06 EUR
Mindestbestellmenge: 19
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PSMN020-100YS,115 PSMN020-100YS,115 Nexperia USA Inc. PSMN020-100YS.pdf Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 112500 Stücke:
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1500+0.92 EUR
3000+0.85 EUR
Mindestbestellmenge: 1500
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PSMN020-100YS,115 PSMN020-100YS,115 Nexperia USA Inc. PSMN020-100YS.pdf Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 113826 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.19 EUR
10+2.01 EUR
50+1.51 EUR
100+1.35 EUR
Mindestbestellmenge: 6
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PSMN004-60B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808143689850E259&compId=PSMN004-60B.pdf?ci_sign=cda35da8611d2137a5ec894d651d996635046dd7
PSMN004-60B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.58 EUR
11+6.69 EUR
25+6.03 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN004-60B,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808143689850E259&compId=PSMN004-60B.pdf?ci_sign=cda35da8611d2137a5ec894d651d996635046dd7
PSMN004-60B,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 75A; 230W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 75A
Power dissipation: 230W
Case: D2PAK; SOT404
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 168nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 714 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.58 EUR
11+6.69 EUR
25+6.03 EUR
Mindestbestellmenge: 10
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PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 781 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.46 EUR
11+6.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P.pdf
PSMN009-100P,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 400A; 230W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 65A
Pulsed drain current: 400A
Power dissipation: 230W
Case: SOT78; TO220AB
On-state resistance: 23.8mΩ
Mounting: THT
Gate charge: 156nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 781 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.46 EUR
11+6.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN009-100P,127 PSMN009-100P.pdf
Hersteller: NXP Semiconductors
Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+4.23 EUR
Mindestbestellmenge: 129
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PSMN011-100YSFX psmn011-100ysf.pdf
PSMN011-100YSFX
Hersteller: Nexperia
Trans MOSFET N-CH 100V 79.5A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 43500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
253+2.15 EUR
500+1.97 EUR
1000+1.78 EUR
10000+1.61 EUR
Mindestbestellmenge: 253
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-60HLX PSMN011-60HL.pdf
PSMN011-60HLX
Hersteller: Nexperia
MOSFETs SOT1205 2NCH 60V 35A
auf Bestellung 1771 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.12 EUR
10+2.13 EUR
100+1.78 EUR
1000+1.24 EUR
1500+1.11 EUR
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PSMN011-60MLX PSMN011-60ML.pdf
PSMN011-60MLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 61A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.45V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 37.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2191 pF @ 30 V
auf Bestellung 911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
13+1.46 EUR
50+1.08 EUR
100+0.96 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-60MSX PSMN011-60MS.pdf
PSMN011-60MSX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
44+1.64 EUR
52+1.4 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-60MSX PSMN011-60MS.pdf
PSMN011-60MSX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1299 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
34+2.14 EUR
44+1.64 EUR
52+1.4 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-80YS,115 PSMN011-80YS.pdf
PSMN011-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.02 EUR
3000+0.94 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-80YS,115 PSMN011-80YS.pdf
PSMN011-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 67A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 117W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
auf Bestellung 5154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.2 EUR
50+1.65 EUR
100+1.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN011-80YS,115 PSMN011-80YS.pdf
PSMN011-80YS,115
Hersteller: Nexperia
MOSFETs SOT669 N-CH 80V 67A
auf Bestellung 13042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.39 EUR
10+1.66 EUR
100+1.25 EUR
500+1.04 EUR
1000+0.86 EUR
1500+0.81 EUR
Mindestbestellmenge: 2
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PSMN012-100YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808167AEDA0DA259&compId=PSMN012-100YS.pdf?ci_sign=6cfca4751690a5844026e54e13f9643cb722a6e4
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.72 EUR
21+3.52 EUR
100+2.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-100YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808167AEDA0DA259&compId=PSMN012-100YS.pdf?ci_sign=6cfca4751690a5844026e54e13f9643cb722a6e4
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1370 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.72 EUR
21+3.52 EUR
100+2.46 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-80BS,118 PSMN012-80BS.pdf
PSMN012-80BS,118
Hersteller: Nexperia
MOSFETs SOT404 N-CH 80V 74A
auf Bestellung 5671 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.54 EUR
10+2.92 EUR
50+2.22 EUR
100+2.01 EUR
500+1.5 EUR
800+1.39 EUR
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PSMN012-80PS,127 PSMN012-80PS.pdf
PSMN012-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
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PSMN012-80PS,127 PSMN012-80PS.pdf
PSMN012-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 52A; Idm: 295A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 52A
Pulsed drain current: 295A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 166 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.63 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-100BS,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808146A1BEE3E259&compId=PSMN013-100BS.pdf?ci_sign=1f0c2bc713900b33e56b048a7cf0da6713a9a3e4
PSMN013-100BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.46 EUR
25+3.2 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-100BS,118 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808146A1BEE3E259&compId=PSMN013-100BS.pdf?ci_sign=1f0c2bc713900b33e56b048a7cf0da6713a9a3e4
PSMN013-100BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 68A; 170W; D2PAK,SOT404
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 68A
Power dissipation: 170W
Case: D2PAK; SOT404
On-state resistance: 38.9mΩ
Mounting: SMD
Gate charge: 83nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1394 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.83 EUR
21+3.46 EUR
25+3.2 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1412 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
68+1.05 EUR
74+0.98 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 157A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 157A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1412 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.17 EUR
68+1.05 EUR
74+0.98 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: Nexperia
MOSFETs SOT1210 N-CH 30V 39A
auf Bestellung 13382 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.08 EUR
10+0.63 EUR
100+0.48 EUR
500+0.4 EUR
1000+0.29 EUR
1500+0.25 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30MLC,115 PSMN013-30MLC.pdf
PSMN013-30MLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 39A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 519 pF @ 15 V
auf Bestellung 1445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.87 EUR
50+0.63 EUR
100+0.56 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30YLC,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780816B9D38EB6259&compId=PSMN013-30YLC.pdf?ci_sign=dc28ec1f13a845fe20f8ee80904e43ccff6023a3
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
51+1.42 EUR
56+1.29 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-30YLC,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780816B9D38EB6259&compId=PSMN013-30YLC.pdf?ci_sign=dc28ec1f13a845fe20f8ee80904e43ccff6023a3
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 410 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
44+1.66 EUR
51+1.42 EUR
56+1.29 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-40VLDX PSMN013-40VLD.pdf
PSMN013-40VLDX
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: NextPowerS3
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.03 EUR
27+2.66 EUR
100+2.46 EUR
Mindestbestellmenge: 18
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PSMN013-40VLDX PSMN013-40VLD.pdf
PSMN013-40VLDX
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; NextPowerS3; unipolar; 40V; 30A; Idm: 169A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 169A
Power dissipation: 46W
Case: LFPAK56D; SOT1205
On-state resistance: 32.8mΩ
Mounting: SMD
Gate charge: 19.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: NextPowerS3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
18+4.03 EUR
27+2.66 EUR
100+2.46 EUR
Mindestbestellmenge: 18
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
36+2.03 EUR
100+1.83 EUR
Mindestbestellmenge: 27
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1365 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
27+2.72 EUR
36+2.03 EUR
100+1.83 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: Nexperia
MOSFETs SOT669 N-CH 60V 53A
auf Bestellung 35117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.59 EUR
10+1.02 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.55 EUR
1500+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-80YS,115 PSMN013-80YS.pdf
PSMN013-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.99 EUR
10+1.89 EUR
50+1.41 EUR
100+1.26 EUR
Mindestbestellmenge: 6
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PSMN014-40YS,115 PSMN014-40YS.pdf
PSMN014-40YS,115
Hersteller: Nexperia
MOSFETs SOT669 N-CH 40V 46A
auf Bestellung 59096 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.42 EUR
10+0.8 EUR
100+0.63 EUR
500+0.56 EUR
1000+0.42 EUR
1500+0.39 EUR
Mindestbestellmenge: 2
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PSMN014-80YLX 4387077819768298psmn014-80yl.pdf
PSMN014-80YLX
Hersteller: Nexperia
Trans MOSFET N-CH 80V 62A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
374+1.45 EUR
500+1.26 EUR
1000+1.12 EUR
Mindestbestellmenge: 374
Im Einkaufswagen  Stück im Wert von  UAH
PSMN014-80YLX 4387077819768298psmn014-80yl.pdf
PSMN014-80YLX
Hersteller: Nexperia
Trans MOSFET N-CH 80V 62A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
374+1.45 EUR
500+1.26 EUR
1000+1.12 EUR
Mindestbestellmenge: 374
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-100YSFX PSMN015-100YSF.pdf
PSMN015-100YSFX
Hersteller: Nexperia
MOSFETs SOT669 100V 55A N-CH
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.31 EUR
10+1.45 EUR
100+0.96 EUR
500+0.76 EUR
1000+0.69 EUR
1500+0.63 EUR
Mindestbestellmenge: 2
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PSMN015-110P,127 PSMN015-110P.pdf
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 110V 75A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
178+3.05 EUR
500+2.79 EUR
Mindestbestellmenge: 178
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-110P,127 PSMN015-110P.pdf
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 110V 75A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
178+3.05 EUR
500+2.79 EUR
Mindestbestellmenge: 178
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 642 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.5 EUR
26+2.76 EUR
50+2.22 EUR
Mindestbestellmenge: 21
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 642 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
21+3.5 EUR
26+2.76 EUR
50+2.22 EUR
Mindestbestellmenge: 21
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.25 EUR
1600+1.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 15A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 30 V
auf Bestellung 11732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.87 EUR
10+2.47 EUR
50+1.87 EUR
100+1.67 EUR
Mindestbestellmenge: 5
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PSMN015-60PS,127 PSMN015-60PS.pdf
PSMN015-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 234 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.12 EUR
14+5.35 EUR
100+4.8 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015-60PS,127 PSMN015-60PS.pdf
PSMN015-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 201A
Power dissipation: 86W
Case: SOT78; TO220AB
On-state resistance: 12.6mΩ
Mounting: THT
Gate charge: 20.9nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 234 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.12 EUR
14+5.35 EUR
100+4.8 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
PSMN016-100PS,127 PSMN016-100PS.pdf
PSMN016-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.69 EUR
16+4.49 EUR
50+3.86 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PSMN016-100PS,127 PSMN016-100PS.pdf
PSMN016-100PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 97 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.69 EUR
16+4.49 EUR
50+3.86 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-30EL,127 3012725411848701psmn017-30el.pdf
PSMN017-30EL,127
Hersteller: Nexperia
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
432+1.25 EUR
500+1.09 EUR
Mindestbestellmenge: 432
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PSMN017-30LL,115
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 30V 15A 8-Pin QFN EP T/R
auf Bestellung 1077 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
687+0.79 EUR
1000+0.7 EUR
Mindestbestellmenge: 687
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+3.09 EUR
27+2.72 EUR
28+2.56 EUR
Mindestbestellmenge: 24
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PSMN017-30PL,127 PSMN017-30PL.pdf
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 15800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
207+2.62 EUR
500+2.28 EUR
1000+2.01 EUR
10000+1.73 EUR
Mindestbestellmenge: 207
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780817334C8B30259&compId=PSMN017-60YS.pdf?ci_sign=e16bb8c02a5d7c1fa26984fb94c590bcc6ff7b60
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 1461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
41+1.76 EUR
50+1.43 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780817334C8B30259&compId=PSMN017-60YS.pdf?ci_sign=e16bb8c02a5d7c1fa26984fb94c590bcc6ff7b60
PSMN017-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 44A; 74W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 44A
Power dissipation: 74W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 36.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1461 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.06 EUR
41+1.76 EUR
50+1.43 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.63 EUR
3000+0.58 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-60YS,115 PSMN017-60YS.pdf
PSMN017-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 44A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 30 V
auf Bestellung 6641 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.68 EUR
50+1.26 EUR
100+1.12 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PSMN017-80PS,127 PSMN017-80PS.pdf
PSMN017-80PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 50A; Idm: 200A; 103W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 103W
Case: SOT78; TO220AB
On-state resistance: 15.2mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.69 EUR
22+3.32 EUR
25+2.92 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PSMN018-100ESFQ PSMN018-100ESF.pdf
Hersteller: NXP Semiconductors
PSMN018-100ESFQ
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
366+1.48 EUR
500+1.29 EUR
1000+1.14 EUR
Mindestbestellmenge: 366
Im Einkaufswagen  Stück im Wert von  UAH
PSMN018-80YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808175BDCBE28259&compId=PSMN018-80YS.pdf?ci_sign=a7b348567575ce8804f2dc4c84d0f0ae22534af5
PSMN018-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 4479 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
32+2.26 EUR
35+2.06 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PSMN018-80YS,115 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7808175BDCBE28259&compId=PSMN018-80YS.pdf?ci_sign=a7b348567575ce8804f2dc4c84d0f0ae22534af5
PSMN018-80YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 45A; 89W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 45A
Power dissipation: 89W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4479 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.95 EUR
32+2.26 EUR
35+2.06 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
PSMN020-100YS,115 PSMN020-100YS.pdf
PSMN020-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.92 EUR
3000+0.85 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN020-100YS,115 PSMN020-100YS.pdf
PSMN020-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 113826 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.01 EUR
50+1.51 EUR
100+1.35 EUR
Mindestbestellmenge: 6
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