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Foto | Bezeichnung | Hersteller | Beschreibung |
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FGH60N60SFDTU Produktcode: 204981
zu Favoriten hinzufügen
Lieblingsprodukt
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Китай |
![]() Gehäuse: TO-247 Vces: 600 V Vce: 2,5 V Ic 25: 120 A Ic 100: 60 A Pd 25: 378 W |
auf Bestellung 38 Stück: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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FGH60N60SFDTU Produktcode: 71883
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR/ON |
![]() Gehäuse: TO-247 Vces: 600 V Vce: 2,5 V Ic 25: 120 A Ic 100: 60 A Pd 25: 378 W |
auf Bestellung 2 Stück: Lieferzeit 21-28 Tag (e) |
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FGH60N60SMD Produktcode: 60291
zu Favoriten hinzufügen
Lieblingsprodukt
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FAIR |
![]() Gehäuse: TO-247 Vces: 600 Vce: 1,9 Ic 25: 120 Ic 100: 60 Pd 25: 300 td(on)/td(off) 100-150 Grad: 18/115 |
verfügbar: 69 Stück
1 Stück - stock Köln
68 Stück - lieferbar in 3-4 Wochen |
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IXGH60N60C2 Produktcode: 30178
zu Favoriten hinzufügen
Lieblingsprodukt
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![]() Gehäuse: TO-247 Vces: 600 Vce: 2,5 Ic 25: 75 Ic 100: 60 Pd 25: 480 |
verfügbar: 1 Stück
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APT60N60BCSG | Microchip Technology |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Power Dissipation (Max): 431W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 3mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 132 Stücke: Lieferzeit 10-14 Tag (e) |
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DAMI660N60 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 60V Drain current: 500A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.9mΩ Mechanical mounting: screw |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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DAMI660N60 | DACO Semiconductor |
Category: Transistor modules MOSFET Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 60V Drain current: 500A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.9mΩ Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FCP260N60E | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP260N60E | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF260N60E | onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
auf Bestellung 4867 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF260N60E | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA60N60UFDTU | ON-Semicoductor |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH60N60SFTU | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
auf Bestellung 6350 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60N60SMD | ONSEMI |
![]() Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3 Type of transistor: IGBT Power dissipation: 300W Case: TO247-3 Mounting: THT Gate charge: 284nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 180A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FGH60N60SMD | ON-Semicoductor |
![]() Anzahl je Verpackung: 2 Stücke |
auf Bestellung 22 Stücke: Lieferzeit 7-14 Tag (e) |
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FGH60N60SMD | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 39 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 18ns/104ns Switching Energy: 1.26mJ (on), 450µJ (off) Test Condition: 400V, 60A, 3Ohm, 15V Gate Charge: 189 nC Part Status: Active Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 600 W |
auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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IGW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 180A Collector-emitter voltage: 600V |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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IGW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Kind of package: tube Manufacturer series: H3 Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 180A Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
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IGW60N60H3FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 27ns/252ns Switching Energy: 2.1mJ (on), 1.13mJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 375 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W |
auf Bestellung 279 Stücke: Lieferzeit 10-14 Tag (e) |
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IKFW60N60EH3XKSA1 | Infineon Technologies |
![]() Packaging: Tube Part Status: Active |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 375nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 180A Turn-on time: 64ns Turn-off time: 314ns Collector-emitter voltage: 600V |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW60N60H3FKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Power dissipation: 416W Case: TO247-3 Mounting: THT Gate charge: 375nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: H3 Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 180A Turn-on time: 64ns Turn-off time: 314ns Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW60N60H3FKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 143 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/252ns Switching Energy: 2.1mJ (on), 1.13mJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 375 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 416 W |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH60N60X3 | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT60N60X3HV | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V |
auf Bestellung 187 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH60N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 115nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 198ns Collector-emitter voltage: 600V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH60N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO247-3 Mounting: THT Gate charge: 115nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 198ns Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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IXGT60N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO268 Mounting: SMD Gate charge: 115nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 198ns Collector-emitter voltage: 600V |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGT60N60C3D1 | IXYS |
![]() Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 380W Case: TO268 Mounting: SMD Gate charge: 115nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 60A Pulsed collector current: 300A Turn-on time: 54ns Turn-off time: 198ns Collector-emitter voltage: 600V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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NGTB60N60SWG | onsemi |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 76 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 87ns/180ns Switching Energy: 1.41mJ (on), 600µJ (off) Test Condition: 400V, 60A, 10Ohm, 15V Gate Charge: 173 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 298 W |
auf Bestellung 260 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD360N60EC_L2_00001 | Panjit International Inc. |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V |
auf Bestellung 5985 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMD360N60EC_L2_00001 | Panjit International Inc. |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMF360N60EC_T0_00001 | Panjit International Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB-F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJMP360N60EC_T0_00001 | Panjit International Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB-L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V |
auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
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WMJ60N60EM | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 240A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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DT60N600KOC | AEG | 05+ |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FCPF260N60E | ON Semiconductor |
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auf Bestellung 49650 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FGH60N60SFDTU |
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auf Bestellung 108 Stücke: Lieferzeit 7-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
FGH60N60SFTU | fairchild |
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auf Bestellung 24 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
FGH60N60UFDTU | fairchild |
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auf Bestellung 32 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
G160N60 | FAIRCHIL | 09+ QSOP20 |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IKFW60N60DH3E | Infineon technologies |
auf Bestellung 60 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXFN60N60 | IXYS |
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auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXFN60N60 | IXYS |
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auf Bestellung 188 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGK60N60B2D1 | IXYS | TO-264 09+ |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGK60N60B2D1 | IXYS |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXGK60N60C2D1 | IXYS |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGN60N60 | ABB | 07+; |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGN60N60 | IXYS |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
IXGN60N60C2 | IXYS | 60A/600V/IGBT/1U |
auf Bestellung 58 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGN60N60C2D1 | IXYS | SOP8 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGN60N60C2D1 | IXYS | 60A/600V/IGBT/1U |
auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGR60N60U1 | IXYS | 00+ |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IXGX60N60C2D1 | IXYS |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
MT60N60 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SGL160N60 | FSC |
auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SGL160N60FD |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SGL160N60UF |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
SGL160N60UFD | FAIRCHILD |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
SGL160N60UFD(G160N |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
FGH60N60SFDTU Produktcode: 204981
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: Китай
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
auf Bestellung 38 Stück:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGH60N60SFDTU Produktcode: 71883
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: FAIR/ON
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,5 V
Ic 25: 120 A
Ic 100: 60 A
Pd 25: 378 W
auf Bestellung 2 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis |
---|---|
1+ | 2.70 EUR |
FGH60N60SMD Produktcode: 60291
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,9
Ic 25: 120
Ic 100: 60
Pd 25: 300
td(on)/td(off) 100-150 Grad: 18/115
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,9
Ic 25: 120
Ic 100: 60
Pd 25: 300
td(on)/td(off) 100-150 Grad: 18/115
verfügbar: 69 Stück
1 Stück - stock Köln
68 Stück - lieferbar in 3-4 Wochen
68 Stück - lieferbar in 3-4 Wochen
Anzahl | Preis |
---|---|
1+ | 3.00 EUR |
IXGH60N60C2 Produktcode: 30178
zu Favoriten hinzufügen
Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 2,5
Ic 25: 75
Ic 100: 60
Pd 25: 480
Gehäuse: TO-247
Vces: 600
Vce: 2,5
Ic 25: 75
Ic 100: 60
Pd 25: 480
verfügbar: 1 Stück
Anzahl | Preis |
---|---|
1+ | 3.92 EUR |
10+ | 3.60 EUR |
APT60N60BCSG |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Description: MOSFET N-CH 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 34.14 EUR |
100+ | 27.74 EUR |
DAMI660N60 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 500A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9mΩ
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 500A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9mΩ
Mechanical mounting: screw
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2+ | 54.33 EUR |
DAMI660N60 |
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 500A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 500A; SOT227B; screw; screw
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 60V
Drain current: 500A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.9mΩ
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 54.33 EUR |
10+ | 52.25 EUR |
FCP260N60E |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
181+ | 2.80 EUR |
FCP260N60E |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 600V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.85 EUR |
50+ | 3.49 EUR |
100+ | 3.17 EUR |
FCPF260N60E |
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Hersteller: onsemi
Description: MOSFET N CH 600V 15A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N CH 600V 15A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 4867 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.82 EUR |
10+ | 3.68 EUR |
100+ | 3.02 EUR |
500+ | 2.83 EUR |
1000+ | 2.70 EUR |
FCPF260N60E |
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Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, N
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
190+ | 3.12 EUR |
FGA60N60UFDTU |
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Hersteller: ON-Semicoductor
IGBT 600V 120A 298W FGA60N60UFDTU TFGA60N60ufdtu
Anzahl je Verpackung: 2 Stücke
IGBT 600V 120A 298W FGA60N60UFDTU TFGA60N60ufdtu
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 21.40 EUR |
FGH60N60SFTU |
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Hersteller: Fairchild Semiconductor
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
auf Bestellung 6350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
81+ | 6.25 EUR |
FGH60N60SMD |
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Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 300W; TO247-3
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Gate charge: 284nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FGH60N60SMD |
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Hersteller: ON-Semicoductor
IGBT 600V 120A 600 FGH60N60SMD TFGH60N60smd
Anzahl je Verpackung: 2 Stücke
IGBT 600V 120A 600 FGH60N60SMD TFGH60N60smd
Anzahl je Verpackung: 2 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 18.29 EUR |
FGH60N60SMD |
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Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 39 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 18ns/104ns
Switching Energy: 1.26mJ (on), 450µJ (off)
Test Condition: 400V, 60A, 3Ohm, 15V
Gate Charge: 189 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 600 W
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.14 EUR |
30+ | 6.99 EUR |
120+ | 5.86 EUR |
510+ | 5.03 EUR |
IGW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.22 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
IGW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.22 EUR |
12+ | 6.29 EUR |
13+ | 5.95 EUR |
IGW60N60H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
Description: IGBT TRENCH 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.09 EUR |
30+ | 7.59 EUR |
120+ | 6.37 EUR |
IKFW60N60EH3XKSA1 |
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auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.08 EUR |
30+ | 10.75 EUR |
120+ | 9.15 EUR |
IKW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Collector-emitter voltage: 600V
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.27 EUR |
10+ | 7.15 EUR |
IKW60N60H3FKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Turn-on time: 64ns
Turn-off time: 314ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 10.27 EUR |
10+ | 7.15 EUR |
IKW60N60H3FKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/252ns
Switching Energy: 2.1mJ (on), 1.13mJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 375 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 416 W
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.46 EUR |
30+ | 6.68 EUR |
120+ | 6.26 EUR |
IXFH60N60X3 |
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Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Description: MOSFET ULTRA JCT 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.30 EUR |
IXFT60N60X3HV |
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Hersteller: Littelfuse Inc.
Description: MOSFET ULTRA 600V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Description: MOSFET ULTRA 600V 60A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 30A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 18.94 EUR |
30+ | 12.03 EUR |
120+ | 10.72 EUR |
IXGH60N60C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.27 EUR |
6+ | 12.03 EUR |
7+ | 11.37 EUR |
IXGH60N60C3D1 |
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Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 16.27 EUR |
6+ | 12.03 EUR |
7+ | 11.37 EUR |
510+ | 10.93 EUR |
IXGT60N60C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.05 EUR |
12+ | 6.06 EUR |
IXGT60N60C3D1 |
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Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 60A; 380W; TO268
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO268
Mounting: SMD
Gate charge: 115nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 300A
Turn-on time: 54ns
Turn-off time: 198ns
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 8.05 EUR |
12+ | 6.06 EUR |
30+ | 5.98 EUR |
NGTB60N60SWG |
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Hersteller: onsemi
Description: IGBT TRENCH FS 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/180ns
Switching Energy: 1.41mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 173 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 298 W
Description: IGBT TRENCH FS 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 87ns/180ns
Switching Energy: 1.41mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 173 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 298 W
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
87+ | 5.85 EUR |
PJMD360N60EC_L2_00001 |
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Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
Description: 600V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.67 EUR |
10+ | 4.38 EUR |
100+ | 3.07 EUR |
500+ | 2.52 EUR |
1000+ | 2.34 EUR |
PJMD360N60EC_L2_00001 |
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Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.28 EUR |
PJMF360N60EC_T0_00001 |
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Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.45 EUR |
10+ | 9.14 EUR |
100+ | 6.70 EUR |
500+ | 5.75 EUR |
PJMP360N60EC_T0_00001 |
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Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.33 EUR |
50+ | 2.71 EUR |
100+ | 2.46 EUR |
500+ | 2.25 EUR |
WMJ60N60EM |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.92 EUR |
7+ | 10.28 EUR |
8+ | 9.72 EUR |
DT60N600KOC |
Hersteller: AEG
05+
05+
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FCPF260N60E |
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Hersteller: ON Semiconductor
auf Bestellung 49650 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGH60N60SFDTU |
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FGH60N60SFDTU Транзисторы IGB-transistors
auf Bestellung 108 Stücke:
Lieferzeit 7-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGH60N60SFTU |
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Hersteller: fairchild
2011+
2011+
auf Bestellung 24 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FGH60N60UFDTU |
![]() |
Hersteller: fairchild
2011+
2011+
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
G160N60 |
Hersteller: FAIRCHIL
09+ QSOP20
09+ QSOP20
auf Bestellung 900 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IKFW60N60DH3E |
Hersteller: Infineon technologies
auf Bestellung 60 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXFN60N60 | ![]() |
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Hersteller: IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXFN60N60 | ![]() |
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Hersteller: IXYS
MODULE
MODULE
auf Bestellung 188 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGK60N60B2D1 |
Hersteller: IXYS
TO-264 09+
TO-264 09+
auf Bestellung 400 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGK60N60B2D1 |
Hersteller: IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGK60N60C2D1 |
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Hersteller: IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGN60N60 |
Hersteller: ABB
07+;
07+;
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGN60N60 |
Hersteller: IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGN60N60C2 |
Hersteller: IXYS
60A/600V/IGBT/1U
60A/600V/IGBT/1U
auf Bestellung 58 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGN60N60C2D1 |
Hersteller: IXYS
SOP8
SOP8
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGN60N60C2D1 |
Hersteller: IXYS
60A/600V/IGBT/1U
60A/600V/IGBT/1U
auf Bestellung 59 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGR60N60U1 |
Hersteller: IXYS
00+
00+
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
IXGX60N60C2D1 |
![]() |
Hersteller: IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SGL160N60 |
Hersteller: FSC
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SGL160N60FD |
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SGL160N60UF |
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SGL160N60UFD |
Hersteller: FAIRCHILD
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SGL160N60UFD(G160N |
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
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