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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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ISC019N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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ISC058N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
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5000+0.46 EUR
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BSC019N06NSATMA1 INFINEON TECHNOLOGIES Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; Idm: 100A; 136W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 77nC
Kind of channel: enhancement
Application: automotive industry
Polarisation: N
Technology: MOSFET
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5000+1.26 EUR
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IPB320P10LMATMA1 INFINEON TECHNOLOGIES Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES IPB320N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES BSC032NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 INFINEON TECHNOLOGIES BSC320N20NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
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2500+2.02 EUR
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
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2ED21844S06JXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Power dissipation: 25.2W
Operating temperature: -40...125°C
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
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6+15.27 EUR
7+12.95 EUR
14+11.71 EUR
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES IKCM15L60GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
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TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...42V
Output current: 0.45A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO252-5
Number of channels: 1
auf Bestellung 2217 Stücke:
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45+1.9 EUR
59+1.45 EUR
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TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
40+2.14 EUR
44+1.94 EUR
48+1.81 EUR
100+1.67 EUR
250+1.54 EUR
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ50N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
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IKY50N120CH3XKSA1 INFINEON TECHNOLOGIES IKY50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
auf Bestellung 2416 Stücke:
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193+0.44 EUR
230+0.37 EUR
264+0.32 EUR
435+0.19 EUR
596+0.14 EUR
1000+0.13 EUR
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IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
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21+4.11 EUR
25+3.53 EUR
32+2.7 EUR
35+2.43 EUR
36+2.37 EUR
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IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES IPP200N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
auf Bestellung 44 Stücke:
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9+9.69 EUR
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES IPP320N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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21+4.07 EUR
24+3.65 EUR
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TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES TLE4207G.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.8A
Type of integrated circuit: driver
Integrated circuit features: fault detection
Application: universal
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: IMC; motor controller
Number of channels: 2
Topology: MOSFET half-bridge
auf Bestellung 2389 Stücke:
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52+1.65 EUR
54+1.58 EUR
57+1.5 EUR
100+1.43 EUR
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BTS3205NHUSA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 1.9Ω
Kind of package: 7 inch reel
Technology: HITFET®
Output voltage: 42V
Power dissipation: 0.78W
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BTS3205NHUMA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 1.9Ω
Kind of package: 13 inch reel
Technology: HITFET®
Output voltage: 42V
Power dissipation: 0.78W
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BCV61CE6327 BCV61CE6327 INFINEON TECHNOLOGIES bcv61.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 75 Stücke:
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75+1.14 EUR
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BCV62CE6327 BCV62CE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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91+0.94 EUR
125+0.68 EUR
180+0.48 EUR
211+0.4 EUR
250+0.37 EUR
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BSL316CH6327XTSA1 BSL316CH6327XTSA1 INFINEON TECHNOLOGIES BSL316CH6327XTSA1.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
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103+0.83 EUR
125+0.68 EUR
144+0.6 EUR
208+0.4 EUR
241+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
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IRF7329TRPBF INFINEON TECHNOLOGIES irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL512SAGMFI011 S25FL512SAGMFI011 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 160 Stücke:
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6+14.79 EUR
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S25FL512SAGMFIR10 S25FL512SAGMFIR10 INFINEON TECHNOLOGIES infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
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S25FL512SAGMFI010 S25FL512SAGMFI010 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S25FL512SAGBHA213 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHAC10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3380 Stücke
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S25FL512SAGBHAC13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Case: BGA24
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHB210 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 676 Stücke
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S25FL512SAGBHB213 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHBA10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHBA13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHI210 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHI213 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHI310 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHI313 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHIA10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHIA13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHIC10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHIC13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHID10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHID13 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHIS10 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 338 Stücke
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S25FL512SAGBHM210 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 676 Stücke
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S25FL512SAGBHM213 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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S25FL512SAGBHMA10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3380 Stücke
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1EDI30I12MFXUMA1 1EDIxxI12MF.pdf
1EDI30I12MFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
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ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+0.46 EUR
Mindestbestellmenge: 5000 Stücke
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BSC019N06NSATMA1 Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; Idm: 100A; 136W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 77nC
Kind of channel: enhancement
Application: automotive industry
Polarisation: N
Technology: MOSFET
auf Bestellung 25000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5000+1.26 EUR
Mindestbestellmenge: 5000 Stücke
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IPB320P10LMATMA1 Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3G-DTE.pdf
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032NE2LSATMA1 BSC032NE2LS-DTE.pdf
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSC320N20NS3GATMA1 BSC320N20NS3G-DTE.pdf
BSC320N20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
IAUC120N06S5L032ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 364A
Power dissipation: 94W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 51.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2500+2.02 EUR
Mindestbestellmenge: 2500 Stücke
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XMC4700E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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XMC4800E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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XMC4800E196K1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Produkt ist nicht verfügbar
Mindestbestellmenge: 160 Stücke
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2ED2184S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2184S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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2ED21844S06JXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRFR3607TRPBF irfr3607pbf.pdf
IRFR3607TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -15...15A
Mounting: THT
Power dissipation: 25.2W
Operating temperature: -40...125°C
Integrated circuit features: integrated bootstrap functionality
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Topology: IGBT three-phase bridge; thermistor
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.27 EUR
7+12.95 EUR
14+11.71 EUR
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IKCM15L60GDXKMA1 IKCM15L60GD.pdf
IKCM15L60GDXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
Produkt ist nicht verfügbar
Mindestbestellmenge: 14 Stücke
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TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...42V
Output current: 0.45A
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-TO252-5
Number of channels: 1
auf Bestellung 2217 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
45+1.9 EUR
59+1.45 EUR
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TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
40+2.14 EUR
44+1.94 EUR
48+1.81 EUR
100+1.67 EUR
250+1.54 EUR
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IKQ50N120CT2XKSA1 IKQ50N120CT2.pdf
IKQ50N120CT2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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IKY50N120CH3XKSA1 IKY50N120CH3.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Load current: 70mA
Semiconductor structure: single diode
Case: SOD323
Type of diode: Schottky switching
Mounting: SMD
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. off-state voltage: 70V
auf Bestellung 2416 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
230+0.37 EUR
264+0.32 EUR
435+0.19 EUR
596+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193 Stücke
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IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.11 EUR
25+3.53 EUR
32+2.7 EUR
35+2.43 EUR
36+2.37 EUR
Mindestbestellmenge: 21 Stücke
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IPP200N25N3GXKSA1 IPP200N25N3G-DTE.pdf
IPP200N25N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Mounting: THT
Power dissipation: 300W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 64A
Kind of channel: enhancement
Drain-source voltage: 250V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO220-3
On-state resistance: 20mΩ
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
9+9.69 EUR
Mindestbestellmenge: 9 Stücke
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IPP320N20N3GXKSA1 IPP320N20N3G-DTE.pdf
IPP320N20N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 105 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
21+4.07 EUR
24+3.65 EUR
Mindestbestellmenge: 21 Stücke
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TLE4207GXUMA2 TLE4207G.pdf
TLE4207GXUMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Output current: 0.8A
Type of integrated circuit: driver
Integrated circuit features: fault detection
Application: universal
Kind of package: reel; tape
Case: PG-DSO-14
Kind of integrated circuit: IMC; motor controller
Number of channels: 2
Topology: MOSFET half-bridge
auf Bestellung 2389 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.65 EUR
54+1.58 EUR
57+1.5 EUR
100+1.43 EUR
Mindestbestellmenge: 52 Stücke
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BTS3205NHUSA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 1.9Ω
Kind of package: 7 inch reel
Technology: HITFET®
Output voltage: 42V
Power dissipation: 0.78W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BTS3205NHUMA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 0.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-4
On-state resistance: 1.9Ω
Kind of package: 13 inch reel
Technology: HITFET®
Output voltage: 42V
Power dissipation: 0.78W
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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BCV61CE6327 bcv61.pdf
BCV61CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
75+1.14 EUR
Mindestbestellmenge: 75 Stücke
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BCV62CE6327 BCV62.pdf
BCV62CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 3849 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
91+0.94 EUR
125+0.68 EUR
180+0.48 EUR
211+0.4 EUR
250+0.37 EUR
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BSL316CH6327XTSA1 BSL316CH6327XTSA1.pdf
BSL316CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 1.4/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 1.4/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±20V
On-state resistance: 0.191/0.177Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2060 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
103+0.83 EUR
125+0.68 EUR
144+0.6 EUR
208+0.4 EUR
241+0.36 EUR
500+0.26 EUR
1000+0.24 EUR
Mindestbestellmenge: 103 Stücke
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IRF7329TRPBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFI011 001-98284%20Rev%20U.pdf
S25FL512SAGMFI011
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+14.79 EUR
Mindestbestellmenge: 6 Stücke
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S25FL512SAGMFIR10 infineon-s25fl512s-512-mb-64-mb-fl-s-flash-spi-multi-i-o-3-datasheet-cn.pdf
S25FL512SAGMFIR10
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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S25FL512SAGMFI010 001-98284%20Rev%20U.pdf
S25FL512SAGMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; SPI; 133MHz; 2.7÷3.6V; SO16; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 240 Stücke
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S25FL512SAGBHA213 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHAC10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHAC13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Case: BGA24
Mounting: SMD
Kind of package: reel; tape
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Interface: QUAD SPI
Kind of interface: serial
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Operating frequency: 133MHz
Memory: 512Mb FLASH
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHB210
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 676 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHB213 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHBA10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHBA13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHI210 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHI213 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHI310 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHI313 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHIA10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHIA13 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHIC10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHIC13 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHID10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHID13 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHIS10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 338 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHM210
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 676 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHM213
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGBHMA10
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3380 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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