Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128360) > Seite 2065 nach 2140
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IRFZ24NPBF | INFINEON TECHNOLOGIES |
  Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 17A Power dissipation: 45W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Gate charge: 13.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1477 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2110PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2...2A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 2816 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 661 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2110STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 500V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 1082 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IHW20N135R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 144W Case: TO247-3 Mounting: THT Gate charge: 170nC Kind of package: tube Pulsed collector current: 60A Turn-off time: 440ns Gate-emitter voltage: ±20V Collector current: 20A Collector-emitter voltage: 1.35kV Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 541 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1EDN7512BXTSA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™ Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; low-side Technology: EiceDRIVER™ Case: PG-SOT23-5 Output current: -8...4A Number of channels: 1 Mounting: SMD Kind of package: reel; tape Supply voltage: 4.5...20V |
auf Bestellung 1345 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLML0040TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 25271 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLML0100TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 1.3W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLML6244TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BC848BE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
auf Bestellung 2680 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRF7342TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -3.4A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKD04N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 75W Case: DPAK Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 12A Turn-on time: 22ns Turn-off time: 317ns Gate-emitter voltage: ±20V Collector current: 4A Collector-emitter voltage: 600V |
auf Bestellung 2441 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKP04N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 42W Case: TO220-3 Mounting: THT Gate charge: 27nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 12A Turn-on time: 21ns Turn-off time: 207ns Gate-emitter voltage: ±20V Collector current: 4A Collector-emitter voltage: 600V |
auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK Mounting: SMD Type of transistor: IGBT Kind of package: tube Case: D2PAK Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 600V Power dissipation: 130W |
auf Bestellung 831 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 600V Power dissipation: 428W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IGW75N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 600V Power dissipation: 428W |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKA15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3 Mounting: THT Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 28ns Kind of package: tube Case: TO220-3 Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 10.6A Collector-emitter voltage: 600V Power dissipation: 35.7W Gate charge: 87nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKB15N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 28ns Kind of package: reel; tape Case: D2PAK Turn-off time: 238ns Gate-emitter voltage: ±20V Collector current: 23A Collector-emitter voltage: 600V Power dissipation: 130W Gate charge: 87nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 757 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKD15N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Mounting: SMD Pulsed collector current: 45A Type of transistor: IGBT Turn-on time: 26ns Kind of package: reel; tape Case: DPAK Turn-off time: 319ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 600V Power dissipation: 250W Gate charge: 90nC Technology: TRENCHSTOP™ RC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 1866 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKD15N60RFATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Pulsed collector current: 45A Turn-on time: 28ns Turn-off time: 177ns Gate-emitter voltage: ±20V Collector current: 15A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKP15N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 130W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 45A Mounting: THT Gate charge: 87nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Mounting: THT Pulsed collector current: 225A Type of transistor: IGBT Turn-on time: 85ns Kind of package: tube Case: TO247-3 Turn-off time: 332ns Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 600V Power dissipation: 428W Gate charge: 470nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFU9024NPBF | INFINEON TECHNOLOGIES |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -55V Drain current: -11A Power dissipation: 38W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.175Ω Mounting: THT Gate charge: 12.7nC Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Mounting: SMD Power dissipation: 0.5W Polarisation: unipolar Technology: SIPMOS™ Drain current: 21mA Kind of channel: depletion Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT23 On-state resistance: 700Ω |
auf Bestellung 1889 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2103STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 680ns Turn-off time: 150ns |
auf Bestellung 2007 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLZ44NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: TO220AB Gate-source voltage: ±16V On-state resistance: 22mΩ Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 3491 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLZ44NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 41A Power dissipation: 83W Case: D2PAK Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IGB30N60H3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: tube |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGB30N60TATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 39A Power dissipation: 187W Case: D2PAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Technology: TRENCHSTOP™ Pulsed collector current: 90A Turn-on time: 44ns Turn-off time: 0.3µs Gate charge: 167nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IGW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
auf Bestellung 180 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGW30N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 94W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ 3 Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 120A Manufacturer series: H3 Gate charge: 165nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKW30N60TFKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 39A; TO247-3 Collector current: 39A Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Turn-off time: 0.3µs Mounting: THT Collector-emitter voltage: 600V Gate charge: 167nC Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Type of transistor: IGBT Turn-on time: 44ns Kind of package: tube |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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AIKW30N60CTXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 30A Power dissipation: 187W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Technology: TRENCHSTOP™ Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 90A Turn-on time: 44ns Turn-off time: 0.3µs Gate charge: 167nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IR21064PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -0.35...0.2A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IR2106SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -0.35...0.2A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
auf Bestellung 56 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2106STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -0.35...0.2A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
auf Bestellung 418 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2102STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -270...130mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 160ns Turn-off time: 150ns |
auf Bestellung 1291 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR5305TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3355 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRFR5305TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -28A Power dissipation: 89W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3658 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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AUIRFR5305TR | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BFR193WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: SOT323 Mounting: SMD Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGP06N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 88W Case: TO220-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKD06N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 6A Power dissipation: 100W Case: DPAK Gate-emitter voltage: ±20V Mounting: SMD Kind of package: reel; tape Pulsed collector current: 18A Turn-on time: 19ns Turn-off time: 279ns Gate charge: 48nC Technology: TRENCHSTOP™ RC Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 431 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKP06N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 88W Case: TO220-3 Mounting: THT Gate charge: 42nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 15ns Turn-off time: 188ns Collector current: 6A Pulsed collector current: 18A Gate-emitter voltage: ±20V Collector-emitter voltage: 600V |
auf Bestellung 480 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSP149H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223 Mounting: SMD Technology: SIPMOS™ Drain current: 0.53A Kind of channel: depletion Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: SOT223 On-state resistance: 3.5Ω Pulsed drain current: 2.6A Power dissipation: 1.8W Polarisation: unipolar |
auf Bestellung 898 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3808PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 140A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of channel: enhancement Gate charge: 150nC Kind of package: tube |
auf Bestellung 197 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF3808STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 75A Pulsed drain current: 550A Power dissipation: 200W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 370 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
BTS5215L | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 3.7A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: BSOP12 On-state resistance: 70mΩ Supply voltage: 5.5...40V DC Technology: Classic PROFET |
auf Bestellung 756 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGB50N65S5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 63A Power dissipation: 135W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Turn-on time: 50ns Turn-off time: 199ns |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IGW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: F5 Technology: TRENCHSTOP™ 5 |
auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW50N65F5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Manufacturer series: F5 Technology: TRENCHSTOP™ 5 |
auf Bestellung 179 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IKW50N65H5FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 305W Case: TO247-3 Gate-emitter voltage: ±20V Mounting: THT Kind of package: tube Manufacturer series: H5 Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR3705ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 89A Power dissipation: 130W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1592 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLR3114ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 130A Power dissipation: 140W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IHW30N160R5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.6kV Collector current: 39A Power dissipation: 131.5W Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 90A Turn-off time: 411ns Gate-emitter voltage: ±20V Gate charge: 205nC Technology: TRENCHSTOP™ Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IR2113PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: DIP14 Output current: -2...2A Power: 1.6W Number of channels: 2 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 145ns Turn-off time: 111ns |
auf Bestellung 1400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMBT2222AE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 300MHz |
auf Bestellung 215 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSC040N10NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 100A Power dissipation: 104W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPB64N25S320ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A Type of transistor: N-MOSFET Technology: OptiMOS® -T Polarisation: unipolar Drain-source voltage: 250V Drain current: 46A Power dissipation: 300W Case: PG-TO263-3-2 Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 256A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IRFZ24NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 17A; 45W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 17A
Power dissipation: 45W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 13.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1477 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2110PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 2816 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2110SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 661 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2110STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 500V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 1082 Stücke:
Lieferzeit 14-21 Tag (e)
| IHW20N135R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Pulsed collector current: 60A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.35kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.35kV; 20A; 144W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 144W
Case: TO247-3
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Pulsed collector current: 60A
Turn-off time: 440ns
Gate-emitter voltage: ±20V
Collector current: 20A
Collector-emitter voltage: 1.35kV
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 541 Stücke:
Lieferzeit 14-21 Tag (e)
| 1EDN7512BXTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,gate driver; EiceDRIVER™
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; low-side
Technology: EiceDRIVER™
Case: PG-SOT23-5
Output current: -8...4A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 4.5...20V
auf Bestellung 1345 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLML0040TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 25271 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLML0100TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRLML6244TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC848BE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2680 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF7342TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -55V; -3.4A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -3.4A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2100 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD04N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 22ns
Turn-off time: 317ns
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
auf Bestellung 2441 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP04N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 42W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 42W
Case: TO220-3
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 12A
Turn-on time: 21ns
Turn-off time: 207ns
Gate-emitter voltage: ±20V
Collector current: 4A
Collector-emitter voltage: 600V
auf Bestellung 229 Stücke:
Lieferzeit 14-21 Tag (e)
| IGB15N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Mounting: SMD
Type of transistor: IGBT
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 130W
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; D2PAK
Mounting: SMD
Type of transistor: IGBT
Kind of package: tube
Case: D2PAK
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 130W
auf Bestellung 831 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW75N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGW75N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| IKA15N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Mounting: THT
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 10.6A
Collector-emitter voltage: 600V
Power dissipation: 35.7W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10.6A; 35.7W; TO220-3
Mounting: THT
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: tube
Case: TO220-3
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 10.6A
Collector-emitter voltage: 600V
Power dissipation: 35.7W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKB15N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; D2PAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 28ns
Kind of package: reel; tape
Case: D2PAK
Turn-off time: 238ns
Gate-emitter voltage: ±20V
Collector current: 23A
Collector-emitter voltage: 600V
Power dissipation: 130W
Gate charge: 87nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD15N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: reel; tape
Case: DPAK
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 250W
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Mounting: SMD
Pulsed collector current: 45A
Type of transistor: IGBT
Turn-on time: 26ns
Kind of package: reel; tape
Case: DPAK
Turn-off time: 319ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Power dissipation: 250W
Gate charge: 90nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 1866 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD15N60RFATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Pulsed collector current: 45A
Turn-on time: 28ns
Turn-off time: 177ns
Gate-emitter voltage: ±20V
Collector current: 15A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKP15N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 130W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 15A
Power dissipation: 130W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW75N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 85ns
Kind of package: tube
Case: TO247-3
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Gate charge: 470nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Pulsed collector current: 225A
Type of transistor: IGBT
Turn-on time: 85ns
Kind of package: tube
Case: TO247-3
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Gate charge: 470nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFU9024NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhancement
Technology: HEXFET®
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; IPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 12.7nC
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS126H6327XTSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 700Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23
Mounting: SMD
Power dissipation: 0.5W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: 21mA
Kind of channel: depletion
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT23
On-state resistance: 700Ω
auf Bestellung 1889 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2103STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 2007 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLZ44NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3491 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLZ44NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 41A; 83W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 41A
Power dissipation: 83W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGB30N60H3ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: tube
auf Bestellung 574 Stücke:
Lieferzeit 14-21 Tag (e)
| IGB30N60TATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate charge: 167nC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 39A; 187W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 39A
Power dissipation: 187W
Case: D2PAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Technology: TRENCHSTOP™
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate charge: 167nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IGW30N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW30N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW30N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Manufacturer series: H3
Gate charge: 165nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 94W; TO247-3; H3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 94W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™ 3
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Manufacturer series: H3
Gate charge: 165nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW30N60TFKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Turn-off time: 0.3µs
Mounting: THT
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 44ns
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 39A; TO247-3
Collector current: 39A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Turn-off time: 0.3µs
Mounting: THT
Collector-emitter voltage: 600V
Gate charge: 167nC
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Turn-on time: 44ns
Kind of package: tube
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| AIKW30N60CTXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate charge: 167nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Turn-on time: 44ns
Turn-off time: 0.3µs
Gate charge: 167nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR21064PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -0.35...0.2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR2106SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 56 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2106STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 418 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2102STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 160ns
Turn-off time: 150ns
auf Bestellung 1291 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR5305TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3355 Stücke:
Lieferzeit 14-21 Tag (e)
| IRFR5305TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3658 Stücke:
Lieferzeit 14-21 Tag (e)
| AUIRFR5305TR |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -31A; 110W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| BFR193WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: SOT323
Mounting: SMD
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)
| IGP06N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 88W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| IKD06N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate charge: 48nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 6A
Power dissipation: 100W
Case: DPAK
Gate-emitter voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate charge: 48nC
Technology: TRENCHSTOP™ RC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 431 Stücke:
Lieferzeit 14-21 Tag (e)
| IKP06N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 15ns
Turn-off time: 188ns
Collector current: 6A
Pulsed collector current: 18A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
| BSP149H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Drain current: 0.53A
Kind of channel: depletion
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 3.5Ω
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.53A; Idm: 2.6A; 1.8W; SOT223
Mounting: SMD
Technology: SIPMOS™
Drain current: 0.53A
Kind of channel: depletion
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: SOT223
On-state resistance: 3.5Ω
Pulsed drain current: 2.6A
Power dissipation: 1.8W
Polarisation: unipolar
auf Bestellung 898 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3808PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 150nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 140A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 140A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 150nC
Kind of package: tube
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF3808STRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 550A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 550A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
| BTS5215L |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3.7A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 70mΩ
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 756 Stücke:
Lieferzeit 14-21 Tag (e)
| IGB50N65S5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 63A; 135W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 63A
Power dissipation: 135W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Turn-on time: 50ns
Turn-off time: 199ns
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
| IGW50N65F5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 80A; 270W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 270W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65F5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; F5
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: F5
Technology: TRENCHSTOP™ 5
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
| IKW50N65H5FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 305W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 305W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR3705ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1592 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLR3114ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IHW30N160R5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Gate charge: 205nC
Technology: TRENCHSTOP™
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.6kV; 39A; 131.5W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.6kV
Collector current: 39A
Power dissipation: 131.5W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 90A
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Gate charge: 205nC
Technology: TRENCHSTOP™
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| IR2113PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP14
Output current: -2...2A
Power: 1.6W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 145ns
Turn-off time: 111ns
auf Bestellung 1400 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBT2222AE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.6A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 300MHz
auf Bestellung 215 Stücke:
Lieferzeit 14-21 Tag (e)
| BSC040N10NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 104W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 104W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IPB64N25S320ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 256A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T; unipolar; 250V; 46A; Idm: 256A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 300W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 256A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH