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TZ500N18KOF TZ500N18KOF INFINEON TECHNOLOGIES TZ500N18KOF.pdf Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS23364DJPBF IRS23364DJPBF INFINEON TECHNOLOGIES irs2336.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 655ns
Power: 2W
Kind of package: tube
Turn-off time: 580ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 11.5...20V DC
Output current: -0.35...0.2A
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES BSP322PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.8Ω
auf Bestellung 762 Stücke:
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71+1.21 EUR
118+0.73 EUR
131+0.65 EUR
148+0.57 EUR
250+0.51 EUR
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DD180N22SHPSA1 INFINEON TECHNOLOGIES DD180N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
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CY62157EV30LL-45ZSXI CY62157EV30LL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Access time: 45ns
Type of integrated circuit: SRAM memory
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Operating voltage: 2.2...3.6V
Kind of memory: SRAM
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8+11.27 EUR
10+10.5 EUR
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IR2117STRPBF INFINEON TECHNOLOGIES ir2117.pdf?fileId=5546d462533600a4015355c84331168d description Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Mounting: SMD
Input voltage: 10...20V
Output current: 0.2A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 1
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IRFL024ZTRPBF IRFL024ZTRPBF INFINEON TECHNOLOGIES IRFL024ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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CY8C27443-24PVXI INFINEON TECHNOLOGIES download description Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
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CY8C28403-24PVXI CY8C28403-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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CY8C28445-24PVXI CY8C28445-24PVXI INFINEON TECHNOLOGIES CY8C28243-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
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BSZ100N03MSGATMA1 BSZ100N03MSGATMA1 INFINEON TECHNOLOGIES BSZ100N03MSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Case: PG-TSDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BDP 947 H6327 TR INFINEON TECHNOLOGIES Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
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2000+0.36 EUR
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IR2117SPBF IR2117SPBF INFINEON TECHNOLOGIES ir2117.pdf description Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
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34+2.53 EUR
40+2.14 EUR
45+1.9 EUR
54+1.59 EUR
57+1.5 EUR
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IR2117PBF IR2117PBF INFINEON TECHNOLOGIES ir2117.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
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31+2.77 EUR
50+2.57 EUR
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IPP110N20NAAKSA1 IPP110N20NAAKSA1 INFINEON TECHNOLOGIES IPP110N20NA-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IAUC100N04S6N022ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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IAUC100N04S6N028ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1 INFINEON TECHNOLOGIES BSS806NEH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Drain current: 2.3A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±8V
On-state resistance: 82mΩ
auf Bestellung 112 Stücke:
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112+0.76 EUR
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BSS806NH6327XTSA1 BSS806NH6327XTSA1 INFINEON TECHNOLOGIES BSS806NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10845 Stücke:
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179+0.48 EUR
261+0.32 EUR
370+0.23 EUR
432+0.2 EUR
621+0.14 EUR
1000+0.12 EUR
3000+0.092 EUR
6000+0.082 EUR
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BC858BE6327 BC858BE6327 INFINEON TECHNOLOGIES BC858CE6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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PVD1352NPBF PVD1352NPBF INFINEON TECHNOLOGIES pvd13n.pdf?fileId=5546d462533600a401535683b097292f Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 491 Stücke:
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50+4.22 EUR
150+3.8 EUR
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BCR108SH6327 BCR108SH6327 INFINEON TECHNOLOGIES BCR108WH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 1101 Stücke:
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358+0.24 EUR
463+0.18 EUR
532+0.15 EUR
589+0.14 EUR
715+0.12 EUR
725+0.12 EUR
1000+0.11 EUR
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IRFU5305PBF IRFU5305PBF INFINEON TECHNOLOGIES irfr5305pbf.pdf description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.65 EUR
89+0.96 EUR
123+0.69 EUR
150+0.68 EUR
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IGCM10F60GAXKMA1 IGCM10F60GAXKMA1 INFINEON TECHNOLOGIES IGCM10F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
6+15.66 EUR
7+12.46 EUR
10+10.13 EUR
14+9.77 EUR
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TLE4264GHTSA1 INFINEON TECHNOLOGIES TLE4264.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.16A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Tolerance: ±2%
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IPP011N04NF2SAKMA1 IPP011N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
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IDH10G65C6XKSA1 IDH10G65C6XKSA1 INFINEON TECHNOLOGIES IDH10G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
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19+4.68 EUR
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BTS70302EPAXUMA1 BTS70302EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
On-state resistance: 25mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 4.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 2959 Stücke:
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40+2.13 EUR
45+1.93 EUR
46+1.89 EUR
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 INFINEON TECHNOLOGIES BSO220N03MDG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Power dissipation: 1.56W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 7.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-DSO-8
On-state resistance: 22mΩ
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
57+1.51 EUR
74+1.15 EUR
90+0.95 EUR
118+0.73 EUR
143+0.6 EUR
168+0.51 EUR
250+0.48 EUR
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S29GL064S80BHV030 INFINEON TECHNOLOGIES infineon-s29gl064s-64-mbit8-mbyte3-datasheet-en.pdf CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
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BFR380L3E6327 BFR380L3E6327 INFINEON TECHNOLOGIES BFR380L3E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Case: TSLP-3-1
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
auf Bestellung 11825 Stücke:
Lieferzeit 14-21 Tag (e)
834+0.1 EUR
962+0.088 EUR
1009+0.084 EUR
1060+0.08 EUR
1097+0.077 EUR
2500+0.074 EUR
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BFR193L3E6327 BFR193L3E6327 INFINEON TECHNOLOGIES BFR193L3E6327-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
334+0.25 EUR
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BTS500851TMBAKSA1 INFINEON TECHNOLOGIES Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 50 Stücke
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IPB65R110CFDAATMA1 IPB65R110CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPB65R110CFDATMA1 IPB65R110CFDATMA1 INFINEON TECHNOLOGIES IPB65R110CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BTS70041EPPXUMA1 BTS70041EPPXUMA1 INFINEON TECHNOLOGIES BTS70041EPP.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Turn-off time: 220µs
Turn-on time: 210µs
auf Bestellung 2742 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.81 EUR
41+2.07 EUR
44+1.94 EUR
Mindestbestellmenge: 31 Stücke
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BTS5090-1EJA BTS5090-1EJA INFINEON TECHNOLOGIES BTS5090-1EJA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 1731 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.28 EUR
40+2.13 EUR
46+1.89 EUR
100+1.58 EUR
250+1.43 EUR
500+1.31 EUR
1000+1.27 EUR
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BTS3050EJ BTS3050EJ INFINEON TECHNOLOGIES BTS3050EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
auf Bestellung 2794 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.81 EUR
53+1.62 EUR
64+1.34 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+0.98 EUR
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BTS5012SDA BTS5012SDA INFINEON TECHNOLOGIES BTS5012SDA.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
Technology: High Current PROFET
auf Bestellung 958 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
33+2.58 EUR
Mindestbestellmenge: 26 Stücke
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BTS3035TF BTS3035TF INFINEON TECHNOLOGIES BTS3035TF.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
38+2.25 EUR
42+2.06 EUR
45+1.93 EUR
50+1.71 EUR
100+1.5 EUR
250+1.38 EUR
500+1.27 EUR
1000+1.24 EUR
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BTS3035EJ BTS3035EJ INFINEON TECHNOLOGIES BTS3035EJ.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
42+2.06 EUR
47+1.83 EUR
55+1.55 EUR
100+1.39 EUR
250+1.3 EUR
500+1.23 EUR
1000+1.11 EUR
Mindestbestellmenge: 42 Stücke
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BSC010N04LSATMA1 BSC010N04LSATMA1 INFINEON TECHNOLOGIES BSC010N04LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BSC010N04LSIATMA1 BSC010N04LSIATMA1 INFINEON TECHNOLOGIES BSC010N04LSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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BCR320UE6327HTSA1 BCR320UE6327HTSA1 INFINEON TECHNOLOGIES BCR320UE6327.pdf Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
auf Bestellung 759 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
149+0.57 EUR
Mindestbestellmenge: 148 Stücke
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SN7002NH6327XTSA2 SN7002NH6327XTSA2 INFINEON TECHNOLOGIES SN7002NH6327XTSA2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
115+0.73 EUR
Mindestbestellmenge: 115 Stücke
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IPW60R031CFD7 IPW60R031CFD7 INFINEON TECHNOLOGIES IPW60R031CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Mounting: THT
Power dissipation: 278W
Gate charge: 141nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
8+11.3 EUR
9+10.41 EUR
10+9.73 EUR
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IPW60R037P7XKSA1 IPW60R037P7XKSA1 INFINEON TECHNOLOGIES IPW60R037P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 121nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
7+12.2 EUR
8+11.45 EUR
9+9.92 EUR
11+8.5 EUR
20+8.31 EUR
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IPW60R037CSFDXKSA1 INFINEON TECHNOLOGIES IPW60R037CSFDXKSA1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 245W
Gate charge: 136nC
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of package: tube
Case: TO247-3
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327 INFINEON TECHNOLOGIES BCV46E6327.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 5706 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.35 EUR
336+0.25 EUR
455+0.19 EUR
512+0.17 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 250 Stücke
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BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
 BCR112E6327HTSA1 INFINEON TECHNOLOGIES bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.51 EUR
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BCV61BE6327 BCV61BE6327 INFINEON TECHNOLOGIES BCV61BE6327-DTE.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 903 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
248+0.35 EUR
334+0.25 EUR
379+0.23 EUR
500+0.2 EUR
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES BCR505.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
253+0.33 EUR
285+0.3 EUR
439+0.19 EUR
527+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 200 Stücke
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BCR185E6327 BCR185E6327 INFINEON TECHNOLOGIES BCR185.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.13 EUR
906+0.094 EUR
1104+0.077 EUR
1115+0.076 EUR
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BCX71KE6327 BCX71KE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10642 Stücke:
Lieferzeit 14-21 Tag (e)
947+0.09 EUR
1055+0.081 EUR
1194+0.071 EUR
1378+0.062 EUR
3000+0.061 EUR
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BCR533E6327HTSA1 BCR533E6327HTSA1 INFINEON TECHNOLOGIES bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
auf Bestellung 4 Stücke:
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4+21.28 EUR
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BCR158E6327 BCR158E6327 INFINEON TECHNOLOGIES BCR158.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
845+0.1 EUR
973+0.088 EUR
1035+0.082 EUR
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BCX70HE6327 BCX70HE6327 INFINEON TECHNOLOGIES BCX70.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 250MHz
auf Bestellung 1025 Stücke:
Lieferzeit 14-21 Tag (e)
993+0.086 EUR
1025+0.083 EUR
Mindestbestellmenge: 993 Stücke
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES BCX71.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.14 EUR
1585+0.054 EUR
1765+0.049 EUR
1995+0.043 EUR
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES BCR503.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
218+0.39 EUR
250+0.35 EUR
459+0.19 EUR
589+0.14 EUR
685+0.12 EUR
1000+0.11 EUR
1300+0.11 EUR
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES BC847SH6327.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
544+0.15 EUR
715+0.12 EUR
807+0.11 EUR
944+0.09 EUR
Mindestbestellmenge: 313 Stücke
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TZ500N18KOF TZ500N18KOF.pdf
TZ500N18KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.8kV; 500A; BG-PB501-1
Type of semiconductor module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 1.8kV
Load current: 500A
Case: BG-PB501-1
Max. forward voltage: 1.53V
Max. forward impulse current: 17kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRS23364DJPBF irs2336.pdf
IRS23364DJPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Mounting: SMD
Case: PLCC44
Type of integrated circuit: driver
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 655ns
Power: 2W
Kind of package: tube
Turn-off time: 580ns
Kind of integrated circuit: gate driver; high-/low-side
Number of channels: 6
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Supply voltage: 11.5...20V DC
Output current: -0.35...0.2A
Produkt ist nicht verfügbar
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BSP322PH6327XTSA1 BSP322PH6327XTSA1-dte.pdf
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Mounting: SMD
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Drain current: -1A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: PG-SOT223
On-state resistance: 0.8Ω
auf Bestellung 762 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.21 EUR
118+0.73 EUR
131+0.65 EUR
148+0.57 EUR
250+0.51 EUR
Mindestbestellmenge: 71 Stücke
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DD180N22SHPSA1 DD180N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Max. forward voltage: 1.39V
Case: BG-PB34SB-1
Mechanical mounting: screw
Load current: 226A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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CY62157EV30LL-45ZSXI Infineon-CY62157EV30_MoBL_8-Mbit_(512_K_16)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe669131ef&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_4_0
CY62157EV30LL-45ZSXI
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; TSOP44 II
Mounting: SMD
Access time: 45ns
Type of integrated circuit: SRAM memory
Memory: 8Mb SRAM
Kind of interface: parallel
Memory organisation: 512kx16bit
Case: TSOP44 II
Operating voltage: 2.2...3.6V
Kind of memory: SRAM
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
8+11.27 EUR
10+10.5 EUR
Mindestbestellmenge: 8 Stücke
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IR2117STRPBF description ir2117.pdf?fileId=5546d462533600a4015355c84331168d
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 200mA; Ch: 1; MOSFET; U: 600V
Mounting: SMD
Input voltage: 10...20V
Output current: 0.2A
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: MOSFET
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IRFL024ZTRPBF IRFL024ZTRPBF.pdf
IRFL024ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5.1A; 2.8W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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CY8C27443-24PVXI description download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SO28; 256BSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 256B SRAM; 16kB FLASH
Clock frequency: 24MHz
Integrated circuit features: watchdog
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 47 Stücke
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CY8C28403-24PVXI CY8C28243-24PVXI.pdf
CY8C28403-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
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CY8C28445-24PVXI CY8C28243-24PVXI.pdf
CY8C28445-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 1kBSRAM,16kBFLASH
Interface: GPIO; I2C; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 24
Memory: 1kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Type of integrated circuit: PSoC microcontroller
Produkt ist nicht verfügbar
Mindestbestellmenge: 2350 Stücke
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BSZ100N03MSGATMA1 BSZ100N03MSG-DTE.pdf
BSZ100N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; 30W; PG-TSDSON-8
Case: PG-TSDSON-8
On-state resistance: 10mΩ
Mounting: SMD
Power dissipation: 30W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BDP 947 H6327 TR
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: BDP 947 H6327 TR
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
2000+0.36 EUR
Mindestbestellmenge: 2000 Stücke
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IR2117SPBF description ir2117.pdf
IR2117SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SO8; 625mW
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SO8
Output current: -420...200mA
Power: 625mW
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
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34+2.53 EUR
40+2.14 EUR
45+1.9 EUR
54+1.59 EUR
57+1.5 EUR
Mindestbestellmenge: 34 Stücke
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IR2117PBF ir2117.pdf
IR2117PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -420...200mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 125ns
Turn-off time: 105ns
auf Bestellung 110 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
31+2.77 EUR
50+2.57 EUR
Mindestbestellmenge: 31 Stücke
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IPP110N20NAAKSA1 IPP110N20NA-DTE.pdf
IPP110N20NAAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 88A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 88A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IAUC100N04S6N022ATMA1 Infineon-IAUC100N04S6N022-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c3edae10df3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 96A; Idm: 400A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 96A
Pulsed drain current: 400A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6N028ATMA1 Infineon-IAUC100N04S6N028-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c7f0ef50ff8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 77A; Idm: 400A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 400A
Power dissipation: 62W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BSS806NEH6327XTSA1 BSS806NEH6327XTSA1.pdf
BSS806NEH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Technology: OptiMOS™ 2
Drain current: 2.3A
Kind of channel: enhancement
Drain-source voltage: 20V
Gate-source voltage: ±8V
On-state resistance: 82mΩ
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
112+0.76 EUR
Mindestbestellmenge: 112 Stücke
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BSS806NH6327XTSA1 BSS806NH6327XTSA1.pdf
BSS806NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.5W; SOT23
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.3A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 82mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 10845 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
261+0.32 EUR
370+0.23 EUR
432+0.2 EUR
621+0.14 EUR
1000+0.12 EUR
3000+0.092 EUR
6000+0.082 EUR
Mindestbestellmenge: 179 Stücke
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BC858BE6327 BC858CE6327.pdf
BC858BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 20 Stücke
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PVD1352NPBF pvd13n.pdf?fileId=5546d462533600a401535683b097292f
PVD1352NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 1.5Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 550mA
On-state resistance: 1.5Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.39x6.47x4.57mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
auf Bestellung 491 Stücke:
Lieferzeit 14-21 Tag (e)
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50+4.22 EUR
150+3.8 EUR
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BCR108SH6327 BCR108WH6327.pdf
BCR108SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 2.2kΩ
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.25W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN x2
Base-emitter resistor: 47kΩ
Case: SOT363
Frequency: 170MHz
Collector current: 0.1A
Mounting: SMD
auf Bestellung 1101 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
463+0.18 EUR
532+0.15 EUR
589+0.14 EUR
715+0.12 EUR
725+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 358 Stücke
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IRFU5305PBF description irfr5305pbf.pdf
IRFU5305PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -28A; 89W; IPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -28A
Power dissipation: 89W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
auf Bestellung 690 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.65 EUR
89+0.96 EUR
123+0.69 EUR
150+0.68 EUR
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IGCM10F60GAXKMA1 IGCM10F60GA.pdf
IGCM10F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PG-MDIP24
Output current: -10...10A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Frequency: 20kHz
Operating voltage: 13.5...18.5/0...400V DC
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 26.1W
Technology: ClPOS™ Mini; TRENCHSTOP™
Voltage class: 600V
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+15.66 EUR
7+12.46 EUR
10+10.13 EUR
14+9.77 EUR
Mindestbestellmenge: 6 Stücke
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TLE4264GHTSA1 TLE4264.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.16A; PG-SOT223-4
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 5.5...45V
Output current: 0.16A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Operating temperature: -40...150°C
Output voltage: 5V
Kind of package: reel; tape
Case: PG-SOT223-4
Number of channels: 1
Tolerance: ±2%
Produkt ist nicht verfügbar
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IPP011N04NF2SAKMA1 Infineon-IPP011N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce566401831709109e5b3e
IPP011N04NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 201A; 375W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 201A
Power dissipation: 375W
Case: TO220-3
On-state resistance: 1.15mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IDH10G65C6XKSA1 IDH10G65C6.pdf
IDH10G65C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO220-2; 72W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 44A
Leakage current: 77µA
Power dissipation: 72W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
19+4.68 EUR
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BTS70302EPAXUMA1 Infineon-BTS7030-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f105951926c9f
BTS70302EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4.5A; Ch: 2; N-Channel; SMD; reel,tape
On-state resistance: 25mΩ
Mounting: SMD
Supply voltage: 4.1...28V DC
Output current: 4.5A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 2
auf Bestellung 2959 Stücke:
Lieferzeit 14-21 Tag (e)
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40+2.13 EUR
45+1.93 EUR
46+1.89 EUR
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BSO220N03MDGXUMA1 BSO220N03MDG-DTE.pdf
BSO220N03MDGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Power dissipation: 1.56W
Polarisation: unipolar
Technology: OptiMOS™ 3
Drain current: 7.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: PG-DSO-8
On-state resistance: 22mΩ
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
57+1.51 EUR
74+1.15 EUR
90+0.95 EUR
118+0.73 EUR
143+0.6 EUR
168+0.51 EUR
250+0.48 EUR
Mindestbestellmenge: 57 Stücke
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S29GL064S80BHV030 infineon-s29gl064s-64-mbit8-mbyte3-datasheet-en.pdf CYPR-S-A0005170109-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Mindestbestellmenge: 676 Stücke
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BFR380L3E6327 BFR380L3E6327-dte.pdf
BFR380L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Mounting: SMD
Case: TSLP-3-1
Collector-emitter voltage: 15V
Power dissipation: 0.38W
Polarisation: bipolar
Kind of transistor: RF
Type of transistor: NPN
Kind of package: reel; tape
Frequency: 14GHz
Collector current: 80mA
auf Bestellung 11825 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
834+0.1 EUR
962+0.088 EUR
1009+0.084 EUR
1060+0.08 EUR
1097+0.077 EUR
2500+0.074 EUR
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BFR193L3E6327 BFR193L3E6327-dte.pdf
BFR193L3E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Frequency: 8GHz
Kind of package: reel; tape
auf Bestellung 751 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
334+0.25 EUR
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BTS500851TMBAKSA1 Infineon-BTS50085-1TMB-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa435af031147
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Produkt ist nicht verfügbar
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IPB65R110CFDAATMA1 Infineon-IPX65R110CFDA-DS-v02_00-en.pdf?fileId=db3a304336797ff90136ba7c820925a5
IPB65R110CFDAATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IPB65R110CFDATMA1 IPB65R110CFD-DTE.pdf
IPB65R110CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BTS70041EPPXUMA1 BTS70041EPP.pdf
BTS70041EPPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 15A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO14-W
On-state resistance: 8mΩ
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Operating temperature: -40...150°C
Turn-off time: 220µs
Turn-on time: 210µs
auf Bestellung 2742 Stücke:
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31+2.81 EUR
41+2.07 EUR
44+1.94 EUR
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BTS5090-1EJA BTS5090-1EJA.pdf
BTS5090-1EJA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: DSO8
On-state resistance: 90mΩ
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
auf Bestellung 1731 Stücke:
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26+3.28 EUR
40+2.13 EUR
46+1.89 EUR
100+1.58 EUR
250+1.43 EUR
500+1.31 EUR
1000+1.27 EUR
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BTS3050EJ BTS3050EJ.pdf
BTS3050EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Output current: 4A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: HITFET®
Turn-on time: 115µs
Output voltage: 40V
Case: SO8-EP
Turn-off time: 210µs
Kind of integrated circuit: low-side
Number of channels: 1
On-state resistance: 0.1Ω
auf Bestellung 2794 Stücke:
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48+1.81 EUR
53+1.62 EUR
64+1.34 EUR
100+1.21 EUR
250+1.12 EUR
500+1.07 EUR
1000+0.98 EUR
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BTS5012SDA BTS5012SDA.pdf
BTS5012SDA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 6A
Number of channels: 1
Mounting: SMD
Case: TO252-5
On-state resistance: 12mΩ
Supply voltage: 5.5...20V DC
Kind of output: N-Channel
Technology: High Current PROFET
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26+3.33 EUR
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BTS3035TF BTS3035TF.pdf
BTS3035TF
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-3
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 1065 Stücke:
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38+2.25 EUR
42+2.06 EUR
45+1.93 EUR
50+1.71 EUR
100+1.5 EUR
250+1.38 EUR
500+1.27 EUR
1000+1.24 EUR
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BTS3035EJ BTS3035EJ.pdf
BTS3035EJ
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8-EP
On-state resistance: 70mΩ
Technology: HITFET®
Operating temperature: -40...150°C
Output voltage: 40V
Turn-on time: 115µs
Turn-off time: 210µs
auf Bestellung 2995 Stücke:
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42+2.06 EUR
47+1.83 EUR
55+1.55 EUR
100+1.39 EUR
250+1.3 EUR
500+1.23 EUR
1000+1.11 EUR
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BSC010N04LSATMA1 BSC010N04LS-DTE.pdf
BSC010N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010N04LSIATMA1 BSC010N04LSI-DTE.pdf
BSC010N04LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR320UE6327HTSA1 BCR320UE6327.pdf
BCR320UE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
auf Bestellung 759 Stücke:
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148+0.58 EUR
149+0.57 EUR
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SN7002NH6327XTSA2 SN7002NH6327XTSA2.pdf
SN7002NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 115 Stücke:
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115+0.73 EUR
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IPW60R031CFD7 IPW60R031CFD7.pdf
IPW60R031CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
On-state resistance: 60mΩ
Mounting: THT
Power dissipation: 278W
Gate charge: 141nC
Polarisation: unipolar
Technology: OptiMOS™
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 13 Stücke:
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8+11.3 EUR
9+10.41 EUR
10+9.73 EUR
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IPW60R037P7XKSA1 IPW60R037P7.pdf
IPW60R037P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 255W
Gate charge: 121nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 600V
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-3
auf Bestellung 142 Stücke:
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7+12.2 EUR
8+11.45 EUR
9+9.92 EUR
11+8.5 EUR
20+8.31 EUR
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IPW60R037CSFDXKSA1 IPW60R037CSFDXKSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
On-state resistance: 37mΩ
Mounting: THT
Power dissipation: 245W
Gate charge: 136nC
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 25A
Kind of channel: enhancement
Drain-source voltage: 600V
Kind of package: tube
Case: TO247-3
Produkt ist nicht verfügbar
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BCV46E6327 BCV46E6327.pdf
BCV46E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: Darlington
auf Bestellung 5706 Stücke:
Lieferzeit 14-21 Tag (e)
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250+0.35 EUR
336+0.25 EUR
455+0.19 EUR
512+0.17 EUR
1000+0.13 EUR
3000+0.12 EUR
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BCR112E6327HTSA1 bcr112series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a37301143a34902e01d0
BCR112E6327HTSA1BCR112E6327HTSA1
BCR112E6327HTSA1BCR112E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 10 Stücke:
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10+8.51 EUR
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BCV61BE6327 BCV61BE6327-DTE.pdf
BCV61BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: NPN x2
auf Bestellung 903 Stücke:
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148+0.58 EUR
248+0.35 EUR
334+0.25 EUR
379+0.23 EUR
500+0.2 EUR
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BCR505E6327 BCR505.pdf
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 6000 Stücke:
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200+0.43 EUR
253+0.33 EUR
285+0.3 EUR
439+0.19 EUR
527+0.17 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
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BCR185E6327 BCR185.pdf
BCR185E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1115 Stücke:
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625+0.13 EUR
906+0.094 EUR
1104+0.077 EUR
1115+0.076 EUR
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BCX71KE6327 BCX71.pdf
BCX71KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 10642 Stücke:
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947+0.09 EUR
1055+0.081 EUR
1194+0.071 EUR
1378+0.062 EUR
3000+0.061 EUR
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BCR533E6327HTSA1 bcr533.pdf?folderId=db3a30431428a3730114407566730303&fileId=db3a30431428a3730114407da25d030a
BCR533E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 10kΩ
Base resistor: 10kΩ
Kind of transistor: BRT
auf Bestellung 4 Stücke:
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4+21.28 EUR
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BCR158E6327 BCR158.pdf
BCR158E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 1035 Stücke:
Lieferzeit 14-21 Tag (e)
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845+0.1 EUR
973+0.088 EUR
1035+0.082 EUR
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BCX70HE6327 BCX70.pdf
BCX70HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 45V
Power dissipation: 0.33W
Polarisation: bipolar
Case: SOT23
Frequency: 250MHz
auf Bestellung 1025 Stücke:
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993+0.086 EUR
1025+0.083 EUR
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BCX71HE6327 BCX71.pdf
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)
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600+0.14 EUR
1585+0.054 EUR
1765+0.049 EUR
1995+0.043 EUR
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BCR503E6327HTSA1 BCR503.pdf
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Kind of transistor: BRT
auf Bestellung 2275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
218+0.39 EUR
250+0.35 EUR
459+0.19 EUR
589+0.14 EUR
685+0.12 EUR
1000+0.11 EUR
1300+0.11 EUR
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BC847SH6327XTSA1 BC847SH6327.pdf
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
544+0.15 EUR
715+0.12 EUR
807+0.11 EUR
944+0.09 EUR
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