Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMT32M5LPS-13 | DIODES INC. | Description: DIODES INC. - DMT32M5LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 1600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1600µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M5LPS-13 | DIODES INC. | Description: DIODES INC. - DMT32M5LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 150 A, 1600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1600µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT32M5LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 150A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3944 pF @ 25 V | auf Bestellung 71806 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M5LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 350A; 3.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 3.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhancement Pulsed drain current: 350A Kind of package: 13 inch reel; tape | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 3.2W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: PowerDI5060-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4389 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M5LPSW-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2W; PowerDI5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Power dissipation: 3.2W Case: PowerDI5060-8 On-state resistance: 2mΩ Mounting: SMD Gate charge: 34nC | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M5LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M6LDG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT32M6LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) | auf Bestellung 23847 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M6LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M6LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M6LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 21A PWRDI3333 Rds On (Max) @ Id, Vgs: 2.5mOhm @ 18A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2101pF @ 15V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 47A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PowerDI3333-8 (Type G) Vgs(th) (Max) @ Id: 2.2V @ 400µA Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 4.5V | auf Bestellung 3990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT32M6LDG-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT334R2S474M3DTA0 | CAP-XX Ltd Supercapacitors | Description: CAP 470MF 4.2V -40-+85C Tolerance: ±20% Packaging: Bulk Package / Case: 3-SMD Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C ESR (Equivalent Series Resistance): 156mOhm @ 1kHz Height - Seated (Max): 0.150" (3.80mm) Capacitance: 470 mF Voltage - Rated: 4.2 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT334R2S474M3DTA0 | Murata Electronics | Supercapacitors / Ultracapacitors EDLC 470mF 4.2V 20% 21x14x3.5mm | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT334R2S474M3DTA0 | CAP-XX | Description: CAP-XX - DMT334R2S474M3DTA0 - Superkondensator, Prismatic Ultra Thin, 0.47 F, 4.2 V, Lötanschlüsse, ± 20% tariffCode: 85322900 Produkthöhe: 3.5mm Bauform / Gehäuse des Kondensators: SMD rohsCompliant: YES Anschlussabstand: - hazardous: false rohsPhthalatesCompliant: TBA Kapazitätstoleranz: ± 20% Kondensatormontage: Oberflächenmontage Qualifikation: - usEccn: EAR99 Lebensdauer bei Temperatur: - Betriebstemperatur, min.: -40°C Äquivalenter Serienwiderstand (ESR): 0.13ohm Produktlänge: 21mm euEccn: NLR Kapazität: 0.47F Spannung (DC): 4.2V Produktpalette: DMT Series productTraceability: No Produktdurchmesser: - Kondensatoranschlüsse: Lötanschlüsse Betriebstemperatur, max.: 85°C Produktbreite: 14mm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 274 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT334R2S474M3DTA0 | CAP-XX | Category: Supercapacitors Description: Supercapacitor; SMD; 470mF; 4.2VDC; ±20%; 21x14x3.5mm; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Body dimensions: 21x14x3.5mm Type of capacitor: supercapacitor Capacitance: 0.47F Operating voltage: 4.2V DC Tolerance: ±20% Trade name: EDLC | auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT34M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 2600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2600µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT34M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 | auf Bestellung 1495 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT34M1LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 1.3W; PowerDI®5060-8 Type of transistor: N-MOSFET Case: PowerDI®5060-8 Mounting: SMD Drain current: 80A Drain-source voltage: 30V On-state resistance: 5.2mΩ Power dissipation: 1.3W Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Polarisation: unipolar Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT34M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 2600 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 42W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2600µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 2380 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT34M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M1LPS-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M2LPS-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V 30V POWERDI506 Drain to Source Voltage (Vdss): 30 V Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 15 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Input Capacitance (Ciss) (Max) @ Vds: 2242 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M2LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 21A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M2LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M5LFVW-13 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M5LFVW-7 | Diodes Incorporated | MOSFET BVDSS: 25V-30V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M8LFDE-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T and R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M8LFDE-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M8LFDE-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 10A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT34M8LFDE-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T and R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M1LFVW-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M1LFVW-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1057 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 13 A, 4900 µohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 860mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4900µohm | auf Bestellung 3758 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 3K | auf Bestellung 646 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 90A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 14.9nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 13A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFDF-7 - Leistungs-MOSFET, n-Kanal, 30 V, 13 A, 4900 µohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 860mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: UDFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4900µohm | auf Bestellung 3758 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1009 pF @ 15 V | auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF-7 | Diodes Zetex | Trans MOSFET N-CH 30V 13A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFDF4-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V X2-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFDF4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V X2-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 3K | auf Bestellung 2997 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LFVW-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFVW-7 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 4600 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 1.5W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4600µohm | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 982 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LFVW-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V PowerDI3333-8 T&R 2K | auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LFVW-7 | DIODES INC. | Description: DIODES INC. - DMT35M4LFVW-7 - Leistungs-MOSFET, n-Kanal, 30 V, 16 A, 4600 µohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 1.5W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4600µohm | auf Bestellung 390 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT35M4LFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 982 pF @ 15 V | auf Bestellung 1980 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M4LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.9A (Ta), 71.1A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1029 pF @ 15 V | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M4LSS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30V SO-8 T&R 2.5K | auf Bestellung 2460 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M7LFV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M7LFV-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M8LDG-13 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M8LDG-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT35M8LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT35M8LDG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 30V 17A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 980mW (Ta), 2W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 15.3A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V, 1032pF @ 15V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.7nC @ 10V, 16.3nC @ 10V Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: PowerDI3333-8 (Type G) | auf Bestellung 14000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT36M1LPS | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT36M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 4800 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 42W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4800µohm | auf Bestellung 1656 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT36M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 65A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT36M1LPS-13 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 25V-30V | auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT36M1LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 100A; 2.6W Mounting: SMD Gate charge: 16.7nC Polarisation: unipolar Drain current: 12A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: PowerDI5060-8 On-state resistance: 9.8mΩ Pulsed drain current: 100A Power dissipation: 2.6W | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT36M1LPS-13 | DIODES INC. | Description: DIODES INC. - DMT36M1LPS-13 - Leistungs-MOSFET, n-Kanal, 30 V, 65 A, 4800 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 65A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 42W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 4800µohm | auf Bestellung 1656 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT36M1LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 30V 65A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT36M1LPS-13 | Diodes Zetex | Trans MOSFET N-CH 30V 16A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT36M4LDT-7A | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V V-DFN3030- Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.04W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 14.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1092pF @ 15V, 1644pF @ 15V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 10A, 10V, 6.4mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, 23.3nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: V-DFN3030-8 (Type K) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT36M4LDT-7A | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V V-DFN3030-8 T&R 1.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3M60LPSW-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 20A, 10V Power Dissipation (Max): 2.13W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 152.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11112 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3M70LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3N4R2U224M3DTA0 | CAP-XX Ltd Supercapacitors | Description: CAP 220MF 4.2V -40-+85C Tolerance: ±20% Packaging: Bulk Package / Case: 3-SMD Size / Dimension: 0.827" L x 0.551" W (21.00mm x 14.00mm) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C ESR (Equivalent Series Resistance): 360mOhm @ 1kHz Height - Seated (Max): 0.098" (2.50mm) Capacitance: 220 mF Voltage - Rated: 4.2 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3N4R2U224M3DTA0 | CAP-XX | Category: Supercapacitors Description: Supercapacitor; SMD; 220mF; 4.2VDC; ±20%; 21x14x2.2mm; 10A; EDLC Mounting: SMD Max. forward impulse current: 10A Operating temperature: -40...85°C Body dimensions: 21x14x2.2mm Type of capacitor: supercapacitor Capacitance: 0.22F Operating voltage: 4.2V DC Tolerance: ±20% Trade name: EDLC | auf Bestellung 534 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT3N4R2U224M3DTA0 | Murata Electronics | Supercapacitors / Ultracapacitors EDLC 220mF 4.2V 20% 21x14x2.2mm | auf Bestellung 4406 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT3N4R2U224M3DTA0 | CAP-XX | Description: CAP-XX - DMT3N4R2U224M3DTA0 - Superkondensator, Prismatic Ultra Thin, 0.22 F, 4.2 V, Lötanschlüsse, ± 20% tariffCode: 85322900 Produkthöhe: 2.2mm Bauform / Gehäuse des Kondensators: SMD euEccn: NLR rohsCompliant: YES Anschlussabstand: - hazardous: false rohsPhthalatesCompliant: TBA Kapazitätstoleranz: ± 20% Kondensatormontage: Oberflächenmontage Qualifikation: - isCanonical: Y Lebensdauer bei Temperatur: - Betriebstemperatur, min.: -40°C Äquivalenter Serienwiderstand (ESR): 0.3ohm Produktlänge: 21mm SVHC: No SVHC (21-Jan-2025) Kapazität: 0.22F Spannung (DC): 4.2V Produktpalette: DMT Series productTraceability: No usEccn: EAR99 Produktdurchmesser: - Betriebstemperatur, max.: 85°C Kondensatoranschlüsse: Lötanschlüsse Produktbreite: 14mm | auf Bestellung 989 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT4001LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 30A, 10V Power Dissipation (Max): 2.6W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 160.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12121 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4001LPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V~40V PowerDI5060-8 T&R 2.5K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4002LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 1300 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.3W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1300µohm | auf Bestellung 2130 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT4002LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4002LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS 31V-40V | auf Bestellung 2393 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4002LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4002LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 1300 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.3W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1300µohm | auf Bestellung 2130 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT4002LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 200A; 2.3W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Pulsed drain current: 200A Power dissipation: 2.3W Gate charge: 116.1nC Polarisation: unipolar Drain current: 100A | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4002LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 100A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 2.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 116.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6771 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 32262 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4003SCT | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4003SCT | Diodes Zetex | Trans MOSFET N-CH 40V 205A 3-Pin(3+Tab) TO-220AB Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4003SCT | DIODES INCORPORATED | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 164A; Idm: 350A; 156W; TO220AB Case: TO220AB Kind of package: tube Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Pulsed drain current: 350A Power dissipation: 156W Gate charge: 75.6nC Polarisation: unipolar Drain current: 164A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4003SCT | Diodes Incorporated | Description: MOSFET N-CH 40V 205A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 6865 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 75.6 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 205A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4003SCT | DIODES INC. | Description: DIODES INC. - DMT4003SCT - Leistungs-MOSFET, n-Kanal, 40 V, 205 A, 2400 µohm, TO-220AB, Durchsteckmontage tariffCode: 85411000 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 205A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 156W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2400µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4004LPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; Idm: 100A; 2.6W Case: PowerDI5060-8 Kind of package: 13 inch reel; tape Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Pulsed drain current: 100A Power dissipation: 2.6W Gate charge: 82.2nC Polarisation: unipolar Drain current: 21A | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 26A PWRDI5060 Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4004LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4004LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 90 A, 2500 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 138W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2500µohm | auf Bestellung 2713 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT4004LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 1130 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4004LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 40V 26A PWRDI5060 Input Capacitance (Ciss) (Max) @ Vds: 4508 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 82.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.6W (Ta), 138W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 2589 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4004LPS-13 | DIODES INC. | Description: DIODES INC. - DMT4004LPS-13 - Leistungs-MOSFET, n-Kanal, 40 V, 90 A, 2500 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 138W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2500µohm | auf Bestellung 2713 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| DMT4005SCT | Diodes Zetex | Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMT4005SCT | Diodes Incorporated | MOSFETs MOSFET BVDSS: 31V-40V | auf Bestellung 22 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
| DMT4005SCT | Diodes Incorporated | Description: MOSFET N-CH 40V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 50A, 10V Power Dissipation (Max): 2.3W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3062 pF @ 20 V | auf Bestellung 3950 Stücke: Lieferzeit 10-14 Tag (e) |
|