Produkte > WMJ
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
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| WMJ020N10HGS | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 288A; Idm: 1152A; 347.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 288A Pulsed drain current: 1152A Power dissipation: 347.2W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: THT Gate charge: 250nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ023N08HGS | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 280A; Idm: 1120A; 320.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 280A Pulsed drain current: 1120A Power dissipation: 320.5W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ028N10HGS | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 228A; Idm: 912A; 320.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 228A Pulsed drain current: 912A Power dissipation: 320.5W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ10N80D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 215W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 33nC | auf Bestellung 229 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ11N150D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W Mounting: THT Drain current: 11A On-state resistance: 2.5Ω Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Gate charge: 93nC Technology: WMOS™ D1 Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 44A Case: TO247-3 Drain-source voltage: 1.5kV | auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ12N120D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 1.25Ω Mounting: THT Gate charge: 94nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ15N80M3 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Power dissipation: 150W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | auf Bestellung 208 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ18N50D1B | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 18A Pulsed drain current: 72A Power dissipation: 271W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ20N50D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 52.5nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ220N20HG3 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3 Case: TO247-3 Mounting: THT Drain-source voltage: 200V Drain current: 82A On-state resistance: 21mΩ Type of transistor: N-MOSFET Power dissipation: 329W Polarisation: unipolar Kind of package: tube Gate charge: 36nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 328A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ25N50D1B | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 25A Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | auf Bestellung 269 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ25N80M3 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 21A Power dissipation: 250W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ26N65FD | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ26N65SR | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Pulsed drain current: 50A Power dissipation: 147W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 198mΩ Mounting: THT Gate charge: 34.7nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ28N50C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 85A Power dissipation: 160W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ28N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ28N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ28N65F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Pulsed drain current: 65A Power dissipation: 160W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 27.3nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ30N65EM | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 100A Power dissipation: 210W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ36N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ36N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ36N65F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ38N60FD | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 38A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ38N65C2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 99mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ38N65FD | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 38A Power dissipation: 277W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.115Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ3N120D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 156.2W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 22.2nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ3N150D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 217 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ40N50D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 416W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ4N150D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 125W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 5.4Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ53N60C2 Produktcode: 183673
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| WMJ53N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ53N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 257 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ53N65C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C4 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ53N65F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 26A; Idm: 90A; 350W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 90A Power dissipation: 350W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement Technology: WMOS™ F2 | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ60N60EM | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 240A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 60mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ69N30DMH | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 65A Pulsed drain current: 260A Power dissipation: 568W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 383nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 245A Power dissipation: 410W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 375ns | auf Bestellung 186 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80N60EM | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Pulsed drain current: 295A Power dissipation: 430W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 43mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 245A Power dissipation: 410W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 44mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80N65C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 245A Power dissipation: 410W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 39mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80N65F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 245A Power dissipation: 410W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 37mΩ Mounting: THT Gate charge: 26.2nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 190ns | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ80R160S | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 15A; Idm: 96A; 250W Type of transistor: N-MOSFET Technology: WMOS™ S Polarisation: unipolar Drain-source voltage: 800V Drain current: 15A Pulsed drain current: 96A Power dissipation: 250W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ80R260S | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W Drain-source voltage: 800V Drain current: 13A On-state resistance: 255mΩ Type of transistor: N-MOSFET Power dissipation: 227W Polarisation: unipolar Kind of package: tube Gate charge: 39nC Technology: WMOS™ S Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 78A Mounting: THT Case: TO247-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ83N25JN | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Drain current: 31A Gate-source voltage: ±20V Power dissipation: 92W Pulsed drain current: 145A Drain-source voltage: 250V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 10nC Reverse recovery time: 180ns On-state resistance: 31mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ90N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 50A; Idm: 295A; 430W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 295A Power dissipation: 430W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 29mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ90N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 295A Power dissipation: 430W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ90N65C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 50A; Idm: 295A; 430W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 50A Pulsed drain current: 295A Power dissipation: 430W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 29mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ90N65SR | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 60A; Idm: 350A; 460W Type of transistor: N-MOSFET Technology: WMOS™ SR Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 350A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 183nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 230 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ90R260S | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W Drain-source voltage: 900V Drain current: 10A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 310W Polarisation: unipolar Kind of package: tube Gate charge: 39.5nC Technology: WMOS™ S Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 50A Mounting: THT Case: TO247-3 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ93N25JN | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO247-3 Case: TO247-3 Mounting: THT Kind of package: tube Drain current: 42A Gate-source voltage: ±20V Power dissipation: 180W Pulsed drain current: 280A Drain-source voltage: 250V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 21nC Reverse recovery time: 190ns On-state resistance: 17mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| WMJ99N60C4 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 350A Gate charge: 175nC | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ99N60F2 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 60A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 25.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 350A Gate charge: 174nC | auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJ9N150D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 9A; Idm: 36A; 320W Mounting: THT Drain current: 9A On-state resistance: 2.9Ω Type of transistor: N-MOSFET Power dissipation: 320W Polarisation: unipolar Kind of package: tube Gate charge: 85.2nC Technology: WMOS™ D1 Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 36A Case: TO247-3 Drain-source voltage: 1.5kV | auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMJP32N50D1 | WAYON | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Case: TO247PLUS Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement | auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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