Produkte > WMJ

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WMJ020N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ020N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ023N08HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ023N08HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ028N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ028N10HGSWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ10N80D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.12 EUR
43+ 1.69 EUR
57+ 1.27 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 34
WMJ10N80D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.12 EUR
43+ 1.69 EUR
57+ 1.27 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 34
WMJ11N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.77 EUR
10+ 7.21 EUR
11+ 6.81 EUR
Mindestbestellmenge: 5
WMJ11N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 11A; Idm: 44A; 250W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.77 EUR
10+ 7.21 EUR
11+ 6.81 EUR
Mindestbestellmenge: 5
WMJ12N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ12N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 12A; Idm: 48A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.25Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ15N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.09 EUR
15+ 4.86 EUR
16+ 4.46 EUR
Mindestbestellmenge: 12
WMJ15N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.09 EUR
15+ 4.86 EUR
16+ 4.46 EUR
17+ 4.2 EUR
Mindestbestellmenge: 12
WMJ18N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
48+ 1.5 EUR
64+ 1.13 EUR
87+ 0.83 EUR
93+ 0.77 EUR
Mindestbestellmenge: 38
WMJ18N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 18A; Idm: 72A; 271W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 271W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
48+ 1.5 EUR
64+ 1.13 EUR
87+ 0.83 EUR
93+ 0.77 EUR
Mindestbestellmenge: 38
WMJ20N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ20N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 20A; Idm: 80A; 278W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 52.5nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ220N20HG3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ220N20HG3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ25N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 134 Stücke:
Lieferzeit 7-14 Tag (e)
36+2.03 EUR
45+ 1.62 EUR
59+ 1.22 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 36
WMJ25N50D1BWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
45+ 1.62 EUR
59+ 1.22 EUR
82+ 0.87 EUR
87+ 0.83 EUR
Mindestbestellmenge: 36
WMJ25N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.51 EUR
12+ 6.01 EUR
21+ 3.45 EUR
22+ 3.26 EUR
900+ 3.22 EUR
Mindestbestellmenge: 10
WMJ25N80M3WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 21A; 250W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 21A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.51 EUR
12+ 6.01 EUR
21+ 3.45 EUR
22+ 3.26 EUR
Mindestbestellmenge: 10
WMJ26N60C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.59 EUR
23+ 3.23 EUR
31+ 2.36 EUR
33+ 2.23 EUR
Mindestbestellmenge: 20
WMJ26N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ26N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.02 EUR
15+ 4.8 EUR
27+ 2.7 EUR
28+ 2.56 EUR
Mindestbestellmenge: 12
WMJ26N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.02 EUR
15+ 4.8 EUR
27+ 2.7 EUR
28+ 2.56 EUR
Mindestbestellmenge: 12
WMJ26N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ26N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ26N65SRWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ26N65SRWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 12A; Idm: 50A; 147W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 198mΩ
Mounting: THT
Gate charge: 34.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ28N50C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ28N50C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 16A; Idm: 85A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 85A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ28N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ28N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ28N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ28N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ28N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ28N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 13A; Idm: 65A; 160W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 160W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 27.3nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ30N65EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ30N65EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 16A; Idm: 100A; 210W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 100A
Power dissipation: 210W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ36N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ36N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ36N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ36N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ36N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ36N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ38N60C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.75 EUR
Mindestbestellmenge: 2
WMJ38N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ38N60FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ38N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ38N65C2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ38N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ38N65FDWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 38A; 277W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Power dissipation: 277W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ3N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 287 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.09 EUR
43+ 1.67 EUR
57+ 1.26 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 35
WMJ3N120D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 287 Stücke:
Lieferzeit 7-14 Tag (e)
35+2.09 EUR
43+ 1.67 EUR
57+ 1.26 EUR
85+ 0.84 EUR
90+ 0.8 EUR
Mindestbestellmenge: 35
WMJ3N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.07 EUR
30+ 2.45 EUR
39+ 1.84 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 24
WMJ3N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 40nC
Technology: WMOS™ D1
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 12A
Drain-source voltage: 1.5kV
Drain current: 3A
On-state resistance: 5.7Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 268 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.07 EUR
30+ 2.45 EUR
39+ 1.84 EUR
55+ 1.32 EUR
58+ 1.24 EUR
Mindestbestellmenge: 24
WMJ40N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 260 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.26 EUR
13+ 5.81 EUR
25+ 2.97 EUR
26+ 2.82 EUR
Mindestbestellmenge: 10
WMJ40N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 416W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 416W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 260 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.26 EUR
13+ 5.81 EUR
25+ 2.97 EUR
26+ 2.82 EUR
Mindestbestellmenge: 10
WMJ4N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.2 EUR
28+ 2.56 EUR
38+ 1.92 EUR
55+ 1.32 EUR
59+ 1.23 EUR
Mindestbestellmenge: 23
WMJ4N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.2 EUR
28+ 2.56 EUR
38+ 1.92 EUR
55+ 1.32 EUR
59+ 1.23 EUR
Mindestbestellmenge: 23
WMJ53N60C2
Produktcode: 183673		Verschiedene Bauteile > Verschiedene Bauteile 1
Produkt ist nicht verfügbar
WMJ53N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+23.84 EUR
Mindestbestellmenge: 3
WMJ53N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)
3+23.84 EUR
4+ 17.88 EUR
10+ 7.15 EUR
300+ 4.23 EUR
900+ 4.16 EUR
Mindestbestellmenge: 3
WMJ53N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ53N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ53N60FD-CYG; 53A; 600V; 378W; 0.078R; N-канальный; WMOS™ FD; Корпус: TO-247; WAYON
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
WMJ53N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ53N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 26A; Idm: 90A; 350W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 350W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ53N65F2WAYONWMJ53N65F2-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ53N65FDWAYONWMJ53N65FD-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ60N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ60N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 36A; Idm: 240A; 403W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 240A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ69N30DMHWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ69N30DMHWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: TO247-3
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ80N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.87 EUR
11+ 6.51 EUR
12+ 6.15 EUR
Mindestbestellmenge: 5
WMJ80N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.87 EUR
11+ 6.51 EUR
12+ 6.15 EUR
Mindestbestellmenge: 5
WMJ80N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ80N60EMWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 600V; 48A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 43mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ80N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ80N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ80N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ80N65C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ80N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 165 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.46 EUR
11+ 6.75 EUR
12+ 6.38 EUR
Mindestbestellmenge: 5
WMJ80N65F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.46 EUR
11+ 6.75 EUR
12+ 6.38 EUR
Mindestbestellmenge: 5
WMJ80R160SWAYONWMJ80R160S-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ80R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ80R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 13A; Idm: 78A; 227W
Mounting: THT
Drain-source voltage: 800V
Drain current: 13A
On-state resistance: 255mΩ
Type of transistor: N-MOSFET
Power dissipation: 227W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 78A
Case: TO247-3
Produkt ist nicht verfügbar
WMJ80R350SWAYONWMJ80R350S-CYG THT N channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.38 EUR
23+ 3.19 EUR
24+ 3.02 EUR
Mindestbestellmenge: 10
WMJ90N60C4WAYONWMJ90N60C4-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ90N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ90N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 50A; Idm: 295A; 430W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 295A
Power dissipation: 430W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ90N65C4WAYONWMJ90N65C4-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ90N65F2WAYONWMJ90N65F2-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ90N65SRWAYONWMJ90N65SR-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ90R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO247-3
Produkt ist nicht verfügbar
WMJ90R260SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Drain-source voltage: 900V
Drain current: 10A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 310W
Polarisation: unipolar
Kind of package: tube
Gate charge: 39.5nC
Technology: WMOS™ S
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 50A
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ90R360SWAYONWMJ90R360S-CYG THT N channel transistors
Produkt ist nicht verfügbar
WMJ90R500SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ90R500SWAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 6A; Idm: 40A; 138W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 6A
Pulsed drain current: 40A
Power dissipation: 138W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ99N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ99N60C4WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 175nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ99N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
WMJ99N60F2WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Pulsed drain current: 350A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 25.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
WMJ9N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
WMJ9N150D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
WMJP32N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.04 EUR
13+ 5.63 EUR
24+ 3.05 EUR
25+ 2.87 EUR
Mindestbestellmenge: 11
WMJP32N50D1WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 40A; TO247PLUS
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Case: TO247PLUS
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.04 EUR
13+ 5.63 EUR
24+ 3.05 EUR
25+ 2.87 EUR
Mindestbestellmenge: 11