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PSMN038-100YLX PSMN038-100YLX Nexperia USA Inc. PSMN038-100YL.pdf Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
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PSMN6R1-30YLDX PSMN6R1-30YLDX Nexperia USA Inc. PSMN6R1-30YLD.pdf Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
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74AVC1T45GN,132 74AVC1T45GN,132 Nexperia USA Inc. 74AVC1T45.pdf Description: IC XLTR VL BIDIR 6-XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON (0.9x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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74AVC1T45GS,132 74AVC1T45GS,132 Nexperia USA Inc. 74AVC1T45.pdf Description: IC XLTR VL BIDIR 6-XSON/SOT1202
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Number of Circuits: 1
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NPIC6C596ABQ-Q100X NPIC6C596ABQ-Q100X Nexperia USA Inc. NPIC6C596A_Q100.pdf Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
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PCMF2DFN1XL PCMF2DFN1XL Nexperia USA Inc. PCMF2DFN1_PCMF3DFN1.pdf Description: CMC 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PCMF3DFN1X PCMF3DFN1X Nexperia USA Inc. PCMF2DFN1_PCMF3DFN1.pdf Description: COMMON MODE CHOKE 6LN SMD ESD
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74AVC16T245DGV-Q1J 74AVC16T245DGV-Q1J Nexperia USA Inc. 74AVC16T245_Q100.pdf Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Grade: Automotive
Qualification: AEC-Q100
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74AVC4TD245GU,115 74AVC4TD245GU,115 Nexperia USA Inc. 74AVC4TD245.pdf Description: IC XLTR VL BIDIR 16-XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
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74HC4040BQ-Q100X 74HC4040BQ-Q100X Nexperia USA Inc. 74HC_HCT4040_Q100.pdf Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 98 MHz
Number of Bits per Element: 12
Qualification: AEC-Q100
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74HCT4040BQ-Q100X 74HCT4040BQ-Q100X Nexperia USA Inc. 74HC_HCT4040_Q100.pdf Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 79 MHz
Number of Bits per Element: 12
Qualification: AEC-Q100
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BAS316Z BAS316Z Nexperia USA Inc. BAS316.pdf Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
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BC817-40QAZ BC817-40QAZ Nexperia USA Inc. BC817-25QA_40QA.pdf Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
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BUK9K5R1-30EX BUK9K5R1-30EX Nexperia USA Inc. BUK9K5R1-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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BUK9K5R6-30EX BUK9K5R6-30EX Nexperia USA Inc. BUK9K5R6-30E.pdf Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
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NCR401UX NCR401UX Nexperia USA Inc. NCR401U.pdf Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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NPIC6C596ABQX NPIC6C596ABQX Nexperia USA Inc. NPIC6C596A.pdf Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NPIC6C596ADJ NPIC6C596ADJ Nexperia USA Inc. NPIC6C596A.pdf Description: IC SR OPEN DRAIN 8BIT 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NPIC6C596APWJ NPIC6C596APWJ Nexperia USA Inc. NPIC6C596A.pdf Description: IC SR OPEN DRAIN 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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PBHV8540X,115 PBHV8540X,115 Nexperia USA Inc. PBHV8540X.pdf Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Qualification: AEC-Q100
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PBHV9040X,115 PBHV9040X,115 Nexperia USA Inc. PBHV9040X.pdf Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Qualification: AEC-Q100
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PBSS5260QAZ PBSS5260QAZ Nexperia USA Inc. PBSS5260QA.pdf Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Qualification: AEC-Q100
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PDTA123JTVL PDTA123JTVL Nexperia USA Inc. PDTA123J_SER.pdf Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
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PDTC144ETVL PDTC144ETVL Nexperia USA Inc. PDTC144ET.pdf Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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PESD24VF1BLYL PESD24VF1BLYL Nexperia USA Inc. PESD24VF1BL.pdf Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PMEG2002AESF,315 PMEG2002AESF,315 Nexperia USA Inc. PMEG2002AESF.pdf Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
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PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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PMPB85ENEAX PMPB85ENEAX Nexperia USA Inc. PMPB85ENEA.pdf Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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PMPB95ENEAX PMPB95ENEAX Nexperia USA Inc. PMPB95ENEA.pdf Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMXB56ENZ PMXB56ENZ Nexperia USA Inc. PMXB56EN.pdf Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
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PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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1500+1.09 EUR
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PSMN1R2-30YLDX PSMN1R2-30YLDX Nexperia USA Inc. PSMN1R2-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
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PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
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PSMN2R1-60CSJ Nexperia USA Inc. Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PTVS26VU1UPAZ PTVS26VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUSB2X4DH PUSB2X4DH Nexperia USA Inc. PUSB2X4D.pdf Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PUSB2X4YH PUSB2X4YH Nexperia USA Inc. PUSB2X4Y.pdf Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVS7V5U1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVS10VU1UPAZ Nexperia USA Inc. PTVSXU1UPA_SER.pdf Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPAZ Nexperia USA Inc. PTVS18VU1UPA.pdf Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
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PMEG45A10EPDAZ PMEG45A10EPDAZ Nexperia USA Inc. PMEG45A10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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PMEG45U10EPDZ PMEG45U10EPDZ Nexperia USA Inc. PMEG45U10EPD.pdf Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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100+1.13 EUR
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BUK7K18-40EX BUK7K18-40EX Nexperia USA Inc. BUK7K18-40E.pdf Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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100+1.06 EUR
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BUK7Y19-100EX BUK7Y19-100EX Nexperia USA Inc. BUK7Y19-100E.pdf Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
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BUK9Y113-100E,115 BUK9Y113-100E,115 Nexperia USA Inc. BUK9Y113-100E.pdf Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
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100+0.8 EUR
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BUK9Y19-100E,115 BUK9Y19-100E,115 Nexperia USA Inc. BUK9Y19-100E.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Qualification: AEC-Q101
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PSMN0R9-30YLDX PSMN0R9-30YLDX Nexperia USA Inc. PSMN0R9-30YLD.pdf Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 13612 Stücke:
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PSMN1R0-30YLDX PSMN1R0-30YLDX Nexperia USA Inc. PSMN1R0-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 6000 Stücke:
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PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
auf Bestellung 7648 Stücke:
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PSMN1R0-40YLDX PSMN1R0-40YLDX Nexperia USA Inc. PSMN1R0-40YLD.pdf Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
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PSMN1R4-30YLDX PSMN1R4-30YLDX Nexperia USA Inc. PSMN1R4-30YLD.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
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PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
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PSMN1R4-40YLDX PSMN1R4-40YLDX Nexperia USA Inc. PSMN1R4-40YLD.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
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2N7002P,235 2N7002P,235 Nexperia USA Inc. 2N7002P.pdf Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Qualification: AEC-Q101
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BAT54W,135 BAT54W,135 Nexperia USA Inc. BAT54W.pdf Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 26656 Stücke:
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PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 30A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 5A, 10V
Power Dissipation (Max): 94.9W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
auf Bestellung 2829 Stücke:
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9+2.34 EUR
15+1.48 EUR
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PSMN6R1-30YLDX PSMN6R1-30YLD.pdf
PSMN6R1-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 66A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 817 pF @ 15 V
auf Bestellung 2348 Stücke:
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74AVC1T45GN,132 74AVC1T45.pdf
74AVC1T45GN,132
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON (0.9x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 4975 Stücke:
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22+0.99 EUR
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34+0.62 EUR
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74AVC1T45GS,132 74AVC1T45.pdf
74AVC1T45GS,132
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT1202
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 500Mbps
Supplier Device Package: 6-XSON, SOT1202 (1x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 8540 Stücke:
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33+0.65 EUR
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53+0.4 EUR
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NPIC6C596ABQ-Q100X NPIC6C596A_Q100.pdf
NPIC6C596ABQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Last Time Buy
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PCMF2DFN1XL PCMF2DFN1_PCMF3DFN1.pdf
PCMF2DFN1XL
Hersteller: Nexperia USA Inc.
Description: CMC 4LN SMD ESD
Features: TVS Diode ESD Protection
Packaging: Tape & Reel (TR)
Package / Case: 9-XFDFN
Filter Type: Signal Line
Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.020" (0.50mm)
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Obsolete
Produkt ist nicht verfügbar
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PCMF3DFN1X PCMF2DFN1_PCMF3DFN1.pdf
PCMF3DFN1X
Hersteller: Nexperia USA Inc.
Description: COMMON MODE CHOKE 6LN SMD ESD
Produkt ist nicht verfügbar
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74AVC16T245DGV-Q1J 74AVC16T245_Q100.pdf
74AVC16T245DGV-Q1J
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74AVC4TD245GU,115 74AVC4TD245.pdf
74AVC4TD245GU,115
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 16-XQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.75 EUR
8000+0.74 EUR
12000+0.73 EUR
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74HC4040BQ-Q100X 74HC_HCT4040_Q100.pdf
74HC4040BQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 2 V ~ 6 V
Count Rate: 98 MHz
Number of Bits per Element: 12
Qualification: AEC-Q100
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74HCT4040BQ-Q100X 74HC_HCT4040_Q100.pdf
74HCT4040BQ-Q100X
Hersteller: Nexperia USA Inc.
Description: IC BINARY COUNTER 12BIT 16DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Grade: Automotive
Part Status: Active
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 79 MHz
Number of Bits per Element: 12
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BAS316Z BAS316.pdf
BAS316Z
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Produkt ist nicht verfügbar
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BC817-40QAZ BC817-25QA_40QA.pdf
BC817-40QAZ
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.5A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 900 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK9K5R1-30EX BUK9K5R1-30E.pdf
BUK9K5R1-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3065pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 26.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BUK9K5R6-30EX BUK9K5R6-30E.pdf
BUK9K5R6-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2480pF @ 25V
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCR401UX NCR401U.pdf
NCR401UX
Hersteller: Nexperia USA Inc.
Description: IC LED DRIVER LINEAR 10MA 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Voltage - Output: 38V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TA)
Current - Output / Channel: 10mA
Internal Switch(s): Yes
Supplier Device Package: 6-TSOP
Voltage - Supply (Max): 40V
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NPIC6C596ABQX NPIC6C596A.pdf
NPIC6C596ABQX
Hersteller: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 8BIT 16-DHVQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-DHVQFN (2.5x3.5)
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NPIC6C596ADJ NPIC6C596A.pdf
NPIC6C596ADJ
Hersteller: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 8BIT 16-SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-SO
Part Status: Obsolete
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NPIC6C596APWJ NPIC6C596A.pdf
NPIC6C596APWJ
Hersteller: Nexperia USA Inc.
Description: IC SR OPEN DRAIN 8BIT 16-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel, Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 5.5V
Supplier Device Package: 16-TSSOP
Part Status: Last Time Buy
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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PBHV8540X,115 PBHV8540X.pdf
PBHV8540X,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 400V 0.5A SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 60mA, 300mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 30MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 520 mW
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PBHV9040X,115 PBHV9040X.pdf
PBHV9040X,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 400V 0.25A SOT89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 20mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 10V
Frequency - Transition: 55MHz
Supplier Device Package: SOT-89
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 250 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Qualification: AEC-Q100
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PBSS5260QAZ PBSS5260QA.pdf
PBSS5260QAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1.7A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.7A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.7 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 325 mW
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PDTA123JTVL PDTA123J_SER.pdf
PDTA123JTVL
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PDTC144ETVL PDTC144ET.pdf
PDTC144ETVL
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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PESD24VF1BLYL PESD24VF1BL.pdf
PESD24VF1BLYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DFN1006-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN1006-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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10000+0.14 EUR
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PMEG2002AESF,315 PMEG2002AESF.pdf
PMEG2002AESF,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTK 20V 200MA DSN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.9 ns
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DSN0603-2
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 200 mA
Current - Reverse Leakage @ Vr: 45 µA @ 20 V
Produkt ist nicht verfügbar
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
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1500+0.76 EUR
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PMPB85ENEAX PMPB85ENEA.pdf
PMPB85ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 3A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 30 V
Qualification: AEC-Q101
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PMPB95ENEAX PMPB95ENEA.pdf
PMPB95ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMXB56ENZ PMXB56EN.pdf
PMXB56ENZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.2A DFN1010D-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 3.2A, 10V
Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN1010D-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
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1500+1.09 EUR
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PSMN1R2-30YLDX PSMN1R2-30YLD.pdf
PSMN1R2-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
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1500+0.82 EUR
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PSMN2R1-60CSJ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V DPAK
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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3000+0.26 EUR
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PTVS26VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS26VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 26VWM 42.1VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 7A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Tape & Reel (TR)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PUSB2X4DH PUSB2X4D.pdf
PUSB2X4DH
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 4.3VC 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.8A (8/20µs)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 4.3V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PUSB2X4YH PUSB2X4Y.pdf
PUSB2X4YH
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.8VC 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Supplier Device Package: 6-TSSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 3.8V (Typ)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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PTVS7V5U1UPAZ PTVSXU1UPA_SER.pdf
PTVS7V5U1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 7.5VWM 12.9VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 23.3A
Voltage - Reverse Standoff (Typ): 7.5V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS10VU1UPAZ PTVSXU1UPA_SER.pdf
PTVS10VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 10VWM 17VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 17.6A
Voltage - Reverse Standoff (Typ): 10V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS18VU1UPAZ PTVS18VU1UPA.pdf
PTVS18VU1UPAZ
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 29.2VC 3HUSON
Packaging: Cut Tape (CT)
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Current - Peak Pulse (10/1000µs): 10.3A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: 3-HUSON (2x2)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7844 Stücke:
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AnzahlPrivatkunde
19+1.15 EUR
30+0.71 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.31 EUR
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PMEG45A10EPDAZ PMEG45A10EPD.pdf
PMEG45A10EPDAZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 21 ns
Technology: Schottky
Capacitance @ Vr, F: 715pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
auf Bestellung 7303 Stücke:
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9+2.57 EUR
13+1.62 EUR
50+1.2 EUR
100+1.07 EUR
500+0.83 EUR
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PMEG45U10EPDZ PMEG45U10EPD.pdf
PMEG45U10EPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 45V 10A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 34 ns
Technology: Schottky
Capacitance @ Vr, F: 1170pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: CFP15
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 10 A
Current - Reverse Leakage @ Vr: 600 µA @ 45 V
auf Bestellung 13579 Stücke:
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8+2.7 EUR
13+1.71 EUR
50+1.27 EUR
100+1.13 EUR
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BUK7K18-40EX BUK7K18-40E.pdf
BUK7K18-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 24.2A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 24.2A
Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
14+1.59 EUR
50+1.19 EUR
100+1.06 EUR
500+0.82 EUR
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BUK7Y19-100EX BUK7Y19-100E.pdf
BUK7Y19-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V LFPAK56-SO8
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Power Dissipation (Max): 169W (Tc)
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Qualification: AEC-Q101
auf Bestellung 2552 Stücke:
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6+4 EUR
10+2.53 EUR
50+1.9 EUR
100+1.7 EUR
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BUK9Y113-100E,115 BUK9Y113-100E.pdf
BUK9Y113-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 12A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3306 Stücke:
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11+1.96 EUR
18+1.23 EUR
50+0.9 EUR
100+0.8 EUR
500+0.62 EUR
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BUK9Y19-100E,115 BUK9Y19-100E.pdf
BUK9Y19-100E,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3148 Stücke:
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7+3.14 EUR
11+2 EUR
50+1.49 EUR
100+1.33 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 300A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 291W
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
auf Bestellung 13612 Stücke:
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5+4.4 EUR
10+2.82 EUR
50+2.14 EUR
100+1.92 EUR
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PSMN1R0-30YLDX PSMN1R0-30YLD.pdf
PSMN1R0-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.02mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121.35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8598 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.71 EUR
10+2.36 EUR
50+1.77 EUR
100+1.58 EUR
500+1.25 EUR
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
auf Bestellung 7648 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.13 EUR
50+2.38 EUR
100+2.13 EUR
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PSMN1R0-40YLDX PSMN1R0-40YLD.pdf
PSMN1R0-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 280A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 25A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8845 pF @ 20 V
auf Bestellung 7500 Stücke:
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1500+1.5 EUR
4500+1.49 EUR
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PSMN1R4-30YLDX PSMN1R4-30YLD.pdf
PSMN1R4-30YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.42mOhm @ 25A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 15 V
auf Bestellung 7410 Stücke:
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8+2.75 EUR
13+1.73 EUR
50+1.29 EUR
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PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
auf Bestellung 15073 Stücke:
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5+4.38 EUR
10+2.8 EUR
50+2.12 EUR
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PSMN1R4-40YLDX PSMN1R4-40YLD.pdf
PSMN1R4-40YLDX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.32 EUR
4500+1.18 EUR
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2N7002P,235 2N7002P.pdf
2N7002P,235
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 360MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Qualification: AEC-Q101
auf Bestellung 24750 Stücke:
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AnzahlPrivatkunde
53+0.39 EUR
91+0.24 EUR
127+0.17 EUR
146+0.14 EUR
500+0.1 EUR
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BAT54W,135 BAT54W.pdf
BAT54W,135
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 200MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 26656 Stücke:
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AnzahlPrivatkunde
59+0.36 EUR
100+0.21 EUR
140+0.15 EUR
162+0.13 EUR
500+0.094 EUR
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