Suchergebnisse für "7n65" : > 120
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MDF7N65BTH |
auf Bestellung 56000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MDF7N65BTH=FQPF7N65C |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MDP7N65BTH |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH027N65S3F-F155 | ON Semiconductor |
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auf Bestellung 1521 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTH4L027N65S3F | ON Semiconductor |
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auf Bestellung 310 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTHL067N65S3H | ON Semiconductor |
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auf Bestellung 380 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVHL027N65S3F | ON Semiconductor |
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auf Bestellung 425 Stücke: Lieferzeit 21-28 Tag (e) |
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| P7N65C |
auf Bestellung 4130 Stücke: Lieferzeit 21-28 Tag (e) |
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| PSWC7N65AE | China Wind |
auf Bestellung 62 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPA07N65C3 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPI07N65C3 |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPP07N65C3 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SPW47N65C3 |
auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) |
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| STF57N65M5 | STMicroelectronics NV |
MOSFET N-CH 650V 42A TO-220FP |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| STW57N65M5 | STMicroelectronics |
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auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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| STWA57N65M5 | STMicroelectronics |
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auf Bestellung 550 Stücke: Lieferzeit 21-28 Tag (e) |
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FMA07N65GX Produktcode: 104777 |
Fujitsu |
IC > IC Niederfrequenzverstärker |
Produkt ist nicht verfügbar
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MDF7N65BTH Produktcode: 130948 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SPW47N65C3 Produktcode: 201189 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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STP57N65M5 Produktcode: 101868 |
Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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STW77N65M5 (Transistor) Produktcode: 52935 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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AOD7N65 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.3A; 178W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.3A Power dissipation: 178W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.56Ω Mounting: SMD Gate charge: 19.6nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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AOT7N65 | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220 |
Produkt ist nicht verfügbar |
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APT47N65BC3G | Microchip Technology |
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT97N65LC6 | Microchip Technology |
Trans MOSFET N-CH 650V 97A 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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| BXP7N65D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| BXP7N65D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BXP7N65U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BXP7N65U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DI5A7N65D1K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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DI5A7N65D1K | DIOTEC SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DI5A7N65D1K | Diotec Semiconductor | MOSFET, DPAK, N, 650V, 5.7A, 0.43 |
Produkt ist nicht verfügbar |
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| FCH067N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO247 Gate-source voltage: ±30V On-state resistance: 59mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH067N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO247 Gate-source voltage: ±30V On-state resistance: 59mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH067N65S3-F155 | ON Semiconductor |
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH077N65F-F085 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 54A Pulsed drain current: 156A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH077N65F-F085 | ON Semiconductor |
Trans MOSFET N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FCH077N65F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 32A Pulsed drain current: 162A Power dissipation: 481W Case: TO247 Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: THT Gate charge: 126nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH077N65F-F155 | ON Semiconductor |
Trans MOSFET N-CH 650V 54A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FCP067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FCP067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCP067N65S3 | ON Semiconductor |
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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FCPF067N65S3 | ON Semiconductor |
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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MDF7N65BTH | Magnachip Semiconductor |
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube |
Produkt ist nicht verfügbar |
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| MSJU07N65A-TP | Micro Commercial Components |
N-CHANNEL MOSFET |
Produkt ist nicht verfügbar |
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| MSJU07N65A-TP | Micro Commercial Components (MCC) |
MOSFET N-CHANNEL MOSFET |
Produkt ist nicht verfügbar |
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| NTH027N65S3F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTH027N65S3F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTH027N65S3F-F155 | ON Semiconductor |
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NTH4L027N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTH4L027N65S3F | ON Semiconductor |
650 V, N Channel Power MOSFET |
Produkt ist nicht verfügbar |
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| NTH4L067N65S3H | ONSEMI |
NTH4L067N65S3H THT N channel transistors |
Produkt ist nicht verfügbar |
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| NTH4L067N65S3H | ON Semiconductor |
NTH4L067N65S3H |
Produkt ist nicht verfügbar |
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NTH4L067N65S3H | onsemi |
MOSFET SUPERFET3 FAST, 67MOHM, TO-247-4 |
Produkt ist nicht verfügbar |
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| NTH4LN067N65S3H | ONSEMI |
NTH4LN067N65S3H THT N channel transistors |
Produkt ist nicht verfügbar |
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NTH4LN067N65S3H | ON Semiconductor |
Trans MOSFET N-CH 650V 40A Tube |
Produkt ist nicht verfügbar |
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| NTHL027N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTHL027N65S3HF | ON Semiconductor |
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
| STF57N65M5 |
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Hersteller: STMicroelectronics NV
MOSFET N-CH 650V 42A TO-220FP
MOSFET N-CH 650V 42A TO-220FP
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| FMA07N65GX Produktcode: 104777 |
Produkt ist nicht verfügbar
| STW77N65M5 (Transistor) Produktcode: 52935 |
Produkt ist nicht verfügbar
| AOD7N65 |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.3A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.3A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: SMD
Gate charge: 19.6nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.3A; 178W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.3A
Power dissipation: 178W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.56Ω
Mounting: SMD
Gate charge: 19.6nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| AOT7N65 |
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Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220
Produkt ist nicht verfügbar
| APT47N65BC3G |
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Hersteller: Microchip Technology
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 47A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| APT97N65LC6 |
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Hersteller: Microchip Technology
Trans MOSFET N-CH 650V 97A 3-Pin(3+Tab) TO-264 Tube
Trans MOSFET N-CH 650V 97A 3-Pin(3+Tab) TO-264 Tube
Produkt ist nicht verfügbar
| BXP7N65D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BXP7N65D |
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Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BXP7N65U |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BXP7N65U |
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Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DI5A7N65D1K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| DI5A7N65D1K |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 25A
Power dissipation: 36W
Case: DPAK; TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.43Ω
Mounting: SMD
Gate charge: 18.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| DI5A7N65D1K |
Hersteller: Diotec Semiconductor
MOSFET, DPAK, N, 650V, 5.7A, 0.43
MOSFET, DPAK, N, 650V, 5.7A, 0.43
Produkt ist nicht verfügbar
| FCH067N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH067N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FCH067N65S3-F155 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FCH077N65F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH077N65F-F085 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; Idm: 156A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 156A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FCH077N65F-F085 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FCH077N65F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH077N65F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; Idm: 162A; 481W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Pulsed drain current: 162A
Power dissipation: 481W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FCH077N65F-F155 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 54A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 54A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FCP067N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCP067N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| FCP067N65S3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220 Tube
Produkt ist nicht verfügbar
| FCPF067N65S3 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 44A 3-Pin(3+Tab) TO-220FP Tube
Produkt ist nicht verfügbar
| MDF7N65BTH |
|
Hersteller: Magnachip Semiconductor
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220F Tube
Produkt ist nicht verfügbar
| MSJU07N65A-TP |
|
Hersteller: Micro Commercial Components (MCC)
MOSFET N-CHANNEL MOSFET
MOSFET N-CHANNEL MOSFET
Produkt ist nicht verfügbar
| NTH027N65S3F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTH027N65S3F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTH027N65S3F-F155 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NTH4L027N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTH4L027N65S3F |
|
Hersteller: ON Semiconductor
650 V, N Channel Power MOSFET
650 V, N Channel Power MOSFET
Produkt ist nicht verfügbar
| NTH4L067N65S3H |
|
Hersteller: ONSEMI
NTH4L067N65S3H THT N channel transistors
NTH4L067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
| NTH4L067N65S3H |
|
Hersteller: onsemi
MOSFET SUPERFET3 FAST, 67MOHM, TO-247-4
MOSFET SUPERFET3 FAST, 67MOHM, TO-247-4
Produkt ist nicht verfügbar
| NTH4LN067N65S3H |
|
Hersteller: ONSEMI
NTH4LN067N65S3H THT N channel transistors
NTH4LN067N65S3H THT N channel transistors
Produkt ist nicht verfügbar
| NTH4LN067N65S3H |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 40A Tube
Trans MOSFET N-CH 650V 40A Tube
Produkt ist nicht verfügbar
| NTHL027N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NTHL027N65S3HF |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar