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STW31N65M5 STW31N65M5 STMicroelectronics STW31N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP31N65M5 STP31N65M5 STMicroelectronics en.DM00049148.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
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STL31N65M5 STMicroelectronics en.DM00098856.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
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STP120NF10 STP120NF10 STMicroelectronics STB120NF10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 545 Stücke:
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17+4.33 EUR
19+3.96 EUR
23+3.25 EUR
27+2.66 EUR
50+2.3 EUR
100+2.04 EUR
250+1.86 EUR
500+1.77 EUR
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STM8S105K4T3C STM8S105K4T3C STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T3CTR STM8S105K4T3CTR STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T6CTR STM8S105K4T6CTR STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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SMCJ24CA-TR SMCJ24CA-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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STWD100NXWY3F STMicroelectronics stwd100.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
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STWD100YNXWY3F STMicroelectronics stwd100.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
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VIPER27LD STMicroelectronics en.CD00215500.pdf Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
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STP3N150 STP3N150 STMicroelectronics STP3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW3N150 STW3N150 STMicroelectronics STP3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STFW3N150 STFW3N150 STMicroelectronics STFW3N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STH3N150-2 STH3N150-2 STMicroelectronics sth3n150-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TYN1012TRG TYN1012TRG STMicroelectronics en.CD00002269.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
auf Bestellung 181 Stücke:
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35+2.07 EUR
58+1.24 EUR
66+1.09 EUR
72+1 EUR
100+0.91 EUR
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STTH812G-TR STTH812G-TR STMicroelectronics stth812.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
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106+0.68 EUR
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STTH812FP STTH812FP STMicroelectronics stth812.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
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31+2.3 EUR
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STTH8S12D STTH8S12D STMicroelectronics stth8s12.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
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61+1.19 EUR
115+0.63 EUR
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STTH812DI STTH812DI STMicroelectronics stth812.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
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47+1.53 EUR
55+1.3 EUR
60+1.2 EUR
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STGW8M120DF3 STMicroelectronics en.DM00294677.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
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KF33BD-TR KF33BD-TR STMicroelectronics KFXX.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
auf Bestellung 7970 Stücke:
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108+0.66 EUR
117+0.61 EUR
130+0.55 EUR
138+0.52 EUR
147+0.49 EUR
250+0.46 EUR
500+0.45 EUR
2500+0.42 EUR
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KF33BDT-TR KF33BDT-TR STMicroelectronics KFXX.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
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93+0.77 EUR
112+0.64 EUR
121+0.59 EUR
133+0.54 EUR
142+0.51 EUR
150+0.48 EUR
152+0.47 EUR
250+0.46 EUR
500+0.44 EUR
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STP22N60M6 STMicroelectronics stp22n60m6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BD139 BD139 STMicroelectronics BD139-10-STMicroelectronics.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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L6386ED L6386ED STMicroelectronics L6386ED.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
DC supply current: 320µA
auf Bestellung 65 Stücke:
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25+2.96 EUR
28+2.65 EUR
31+2.37 EUR
50+2.33 EUR
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L6386ED013TR L6386ED013TR STMicroelectronics L6386ED.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
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STGB6NC60HDT4 STMicroelectronics en.CD00058424.pdf description Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
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STP110N10F7 STP110N10F7 STMicroelectronics en.DM00072347.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
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22+3.3 EUR
24+3.07 EUR
26+2.82 EUR
31+2.35 EUR
50+2.22 EUR
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TN4050-12PI TN4050-12PI STMicroelectronics tn4050-12pi.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT; tube
Case: TOP3I
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Load current: 25A
Max. load current: 40A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 0.4kA
Kind of package: tube
auf Bestellung 34 Stücke:
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15+5.08 EUR
21+3.42 EUR
30+2.9 EUR
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TS914IDT TS914IDT STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 278 Stücke:
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32+2.25 EUR
39+1.87 EUR
42+1.73 EUR
47+1.53 EUR
51+1.42 EUR
100+1.33 EUR
250+1.23 EUR
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TS914ID TS914ID STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
auf Bestellung 191 Stücke:
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28+2.59 EUR
35+2.07 EUR
43+1.7 EUR
53+1.36 EUR
100+1 EUR
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TS914AIDT TS914AIDT STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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TS914AID TS914AID STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS914AIYDT TS914AIYDT STMicroelectronics ts914a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS914IYDT TS914IYDT STMicroelectronics ts914.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TSC1641IQT STMicroelectronics tsc1641.pdf Category: A/D converters - integrated circuits
Description: IC: A/D converter; Ch: 2
Type of integrated circuit: A/D converter
Number of channels: 2
Mounting: SMD
Interface: ADC x2
Operating temperature: -40...125°C
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L6226PD STMicroelectronics l6226.pdf Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO36; 1.4A; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 1.4A
Number of channels: 4
Mounting: SMD
On-state resistance: 0.73Ω
Operating temperature: -40...150°C
Application: universal
Frequency: 0.1MHz
Supply voltage: 8...52V
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STP16N65M2 STMicroelectronics en.DM00140964.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
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STW56N65M2-4 STMicroelectronics stw56n65m2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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STD16N65M2 STMicroelectronics en.DM00140850.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP315N10F7 STP315N10F7 STMicroelectronics en.DM00096835.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
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STH315N10F7-2 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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STH315N10F7-6 STMicroelectronics sth315n10f7-2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL STP200N3LL STMicroelectronics en.DM00255610.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
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STP200NF03 STMicroelectronics en.CD00003018.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 30V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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1.5KE120A 1.5KE120A STMicroelectronics cd00000663.pdf 15ke68.pdf 1.5KE_Datasheet.pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 1.5ke%20series(1500w,5.8v_408v).pdf 1.5KE SERIES_O2104.pdf description Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
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STWA70N65DM6 STWA70N65DM6 STMicroelectronics stwa70n65dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
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TDA7575B TDA7575B STMicroelectronics tda7575b.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Case: FLEXIWATT27
Interface: I2C
Mounting: THT
Number of channels: 2
Impedance: 2Ω
Supply voltage: 8...18V DC
Output power: 75W
Amplifier class: AB
Type of integrated circuit: audio amplifier
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LM833DT LM833DT STMicroelectronics LM833DT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
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186+0.39 EUR
209+0.34 EUR
242+0.3 EUR
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271+0.26 EUR
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MC1458IDT MC1458IDT STMicroelectronics MC1458ID.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
Quiescent current: 2.3mA
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Bandwidth: 1MHz
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220+0.33 EUR
243+0.29 EUR
275+0.26 EUR
317+0.23 EUR
338+0.21 EUR
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MC1458DT MC1458DT STMicroelectronics mc1458.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
Quiescent current: 2.3mA
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Bandwidth: 1MHz
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LD39150PT-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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LD39150PU-R STMicroelectronics ld39150.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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LD39150PU33R STMicroelectronics ld39150.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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MMBTA42 MMBTA42 STMicroelectronics MMBTA42.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
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STM32F373RCT6TR STMicroelectronics stm32f373c8.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
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BUX10 BUX10 STMicroelectronics CD00000944.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 25A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 25A
Case: TO3
Mounting: THT
Power: 150W
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LM339N LM339N STMicroelectronics suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flm339 LM339.pdf en.CD00000460.pdf lm339-d.pdf Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Number of channels: 4
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VIPER17HN STMicroelectronics en.CD00185039.pdf Category: Voltage regulators - PWM circuits
Description: IC: driver
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STW31N65M5 STW31N65M5.pdf
STW31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 13.9A; 150W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.9A
Power dissipation: 150W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STP31N65M5 en.DM00049148.pdf
STP31N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 22A; Idm: 88A; 150W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 22A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 148mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 88A
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STL31N65M5 en.DM00098856.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 162mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 45nC
Pulsed drain current: 60A
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STP120NF10 STB120NF10.pdf
STP120NF10
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 100V; 77A; 312W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 77A
Power dissipation: 312W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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17+4.33 EUR
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STM8S105K4T3C STM8S105C4-DTE.pdf
STM8S105K4T3C
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T3CTR STM8S105C4-DTE.pdf
STM8S105K4T3CTR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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STM8S105K4T6CTR STM8S105C4-DTE.pdf
STM8S105K4T6CTR
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
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SMCJ24CA-TR SMCJ33CA-TR.pdf
SMCJ24CA-TR
Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 28.1V; 40A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 28.1V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
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STWD100NXWY3F stwd100.pdf
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
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STWD100YNXWY3F stwd100.pdf
Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; timer; open drain,push-pull; 2.7÷5.5VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: timer
Kind of RESET output: open drain; push-pull
Active logical level: low
Supply voltage: 2.7...5.5V DC
Case: SOT23-5
Operating temperature: -40...125°C
Mounting: SMD
Number of channels: 1
Integrated circuit features: watchdog
Produkt ist nicht verfügbar
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VIPER27LD en.CD00215500.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.49 EUR
Mindestbestellmenge: 50
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STP3N150 STP3N150.pdf
STP3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO220-3
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.09 EUR
18+4.2 EUR
Mindestbestellmenge: 15
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STW3N150 STP3N150.pdf
STW3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 140W; TO247
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.39 EUR
18+3.98 EUR
Mindestbestellmenge: 14
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STFW3N150 STFW3N150.pdf
STFW3N150
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1500V; 1.6A; 63W; TO3PF
Type of transistor: N-MOSFET
Technology: PowerMesh™
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 1.6A
Power dissipation: 63W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.13 EUR
19+3.83 EUR
Mindestbestellmenge: 18
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STH3N150-2 sth3n150-2.pdf
STH3N150-2
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 7A; 86W; DPAK
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 7A
Power dissipation: 86W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TYN1012TRG en.CD00002269.pdf
TYN1012TRG
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 12A; 8A; Igt: 5mA; TO220AB; THT; tube
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Case: TO220AB
Kind of package: tube
Gate current: 5mA
Max. load current: 12A
Max. forward impulse current: 140A
Type of thyristor: thyristor
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
58+1.24 EUR
66+1.09 EUR
72+1 EUR
100+0.91 EUR
Mindestbestellmenge: 35
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STTH812G-TR stth812.pdf
STTH812G-TR
Hersteller: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; 50ns; D2PAK; Ufmax: 1.25V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK
Kind of package: reel; tape
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
auf Bestellung 423 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
84+0.86 EUR
106+0.68 EUR
250+0.61 EUR
Mindestbestellmenge: 52
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STTH812FP stth812.pdf
STTH812FP
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220FPAC; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.3 EUR
Mindestbestellmenge: 31
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STTH8S12D stth8s12.pdf
STTH8S12D
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 70A; TO220AC; 32ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 32ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.75V
Max. forward impulse current: 70A
auf Bestellung 308 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
115+0.63 EUR
Mindestbestellmenge: 61
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STTH812DI stth812.pdf
STTH812DI
Hersteller: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8A; tube; Ifsm: 80A; TO220ACIns; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 8A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220ACIns
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. forward voltage: 1.25V
Max. forward impulse current: 80A
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
55+1.3 EUR
60+1.2 EUR
Mindestbestellmenge: 47
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STGW8M120DF3 en.DM00294677.pdf
Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 8A; 167W; TO247-3
Mounting: THT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Kind of package: tube
Gate charge: 32nC
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 32A
Power dissipation: 167W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Produkt ist nicht verfügbar
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KF33BD-TR KFXX.pdf
KF33BD-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SO8; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
auf Bestellung 7970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
108+0.66 EUR
117+0.61 EUR
130+0.55 EUR
138+0.52 EUR
147+0.49 EUR
250+0.46 EUR
500+0.45 EUR
2500+0.42 EUR
Mindestbestellmenge: 90
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KF33BDT-TR KFXX.pdf
KF33BDT-TR
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; KFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: KFXX
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
auf Bestellung 1722 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
112+0.64 EUR
121+0.59 EUR
133+0.54 EUR
142+0.51 EUR
150+0.48 EUR
152+0.47 EUR
250+0.46 EUR
500+0.44 EUR
Mindestbestellmenge: 93
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STP22N60M6 stp22n60m6.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 9.5A; Idm: 42A
Type of transistor: N-MOSFET
Technology: MDmesh™ M6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.5A
Pulsed drain current: 42A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BD139 BD139-10-STMicroelectronics.pdf
BD139
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; SOT32
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 12.5W
Case: SOT32
Current gain: 25...250
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Produkt ist nicht verfügbar
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L6386ED L6386ED.pdf
L6386ED
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: tube
Supply voltage: 17V
DC supply current: 320µA
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
28+2.65 EUR
31+2.37 EUR
50+2.33 EUR
Mindestbestellmenge: 25
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L6386ED013TR L6386ED.pdf
L6386ED013TR
Hersteller: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; push-pull; SO14; 0.4A; 580V; Ch: 2; 400kHz; Usup: 17V
Type of integrated circuit: driver
Topology: push-pull
Kind of integrated circuit: high-/low-side; IGBT gate driver; MOSFET gate driver
Case: SO14
Output current: 0.4A
Output voltage: 580V
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 400kHz
Kind of package: reel; tape
Supply voltage: 17V
Produkt ist nicht verfügbar
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STGB6NC60HDT4 description en.CD00058424.pdf
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 7A; 62.5W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 7A
Power dissipation: 62.5W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 21A
Mounting: SMD
Gate charge: 13.6nC
Kind of package: reel; tape
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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STP110N10F7 en.DM00072347.pdf
STP110N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 74 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
24+3.07 EUR
26+2.82 EUR
31+2.35 EUR
50+2.22 EUR
Mindestbestellmenge: 22
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TN4050-12PI tn4050-12pi.pdf
TN4050-12PI
Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 40A; 25A; Igt: 50mA; TOP3I; THT; tube
Case: TOP3I
Mounting: THT
Type of thyristor: thyristor
Gate current: 50mA
Load current: 25A
Max. load current: 40A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 0.4kA
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
21+3.42 EUR
30+2.9 EUR
Mindestbestellmenge: 15
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TS914IDT ts914.pdf
TS914IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
39+1.87 EUR
42+1.73 EUR
47+1.53 EUR
51+1.42 EUR
100+1.33 EUR
250+1.23 EUR
Mindestbestellmenge: 32
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TS914ID ts914.pdf
TS914ID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.59 EUR
35+2.07 EUR
43+1.7 EUR
53+1.36 EUR
100+1 EUR
Mindestbestellmenge: 28
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TS914AIDT ts914a.pdf
TS914AIDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS914AID ts914a.pdf
TS914AID
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Produkt ist nicht verfügbar
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TS914AIYDT ts914a.pdf
TS914AIYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TS914IYDT ts914.pdf
TS914IYDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Produkt ist nicht verfügbar
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TSC1641IQT tsc1641.pdf
Hersteller: STMicroelectronics
Category: A/D converters - integrated circuits
Description: IC: A/D converter; Ch: 2
Type of integrated circuit: A/D converter
Number of channels: 2
Mounting: SMD
Interface: ADC x2
Operating temperature: -40...125°C
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+2.72 EUR
Mindestbestellmenge: 3000
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L6226PD l6226.pdf
Hersteller: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; PowerSO36; 1.4A; Ch: 4
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: motor controller
Case: PowerSO36
Output current: 1.4A
Number of channels: 4
Mounting: SMD
On-state resistance: 0.73Ω
Operating temperature: -40...150°C
Application: universal
Frequency: 0.1MHz
Supply voltage: 8...52V
Produkt ist nicht verfügbar
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STP16N65M2 en.DM00140964.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STW56N65M2-4 stw56n65m2-4.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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STD16N65M2 en.DM00140850.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STP315N10F7 en.DM00096835.pdf
STP315N10F7
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 120A; Idm: 720A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 720A
Power dissipation: 315W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
18+4.12 EUR
Mindestbestellmenge: 16
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STH315N10F7-2 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Produkt ist nicht verfügbar
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STH315N10F7-6 sth315n10f7-2.pdf
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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STP200N3LL en.DM00255610.pdf
STP200N3LL
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.51 EUR
Mindestbestellmenge: 13
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STP200NF03 en.CD00003018.pdf
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ III; unipolar; 30V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ III
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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1.5KE120A description cd00000663.pdf 15ke68.pdf 1.5KE_Datasheet.pdf 1.5KE%20SERIES%20N0209%20REV.E.pdf 1.5ke%20series(1500w,5.8v_408v).pdf 1.5KE SERIES_O2104.pdf
1.5KE120A
Hersteller: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
161+0.45 EUR
195+0.37 EUR
250+0.34 EUR
500+0.31 EUR
Mindestbestellmenge: 122
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STWA70N65DM6 stwa70n65dm6.pdf
STWA70N65DM6
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 43A; Idm: 260A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43A
Pulsed drain current: 260A
Power dissipation: 450W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 125nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TDA7575B tda7575b.pdf
TDA7575B
Hersteller: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 75W; I2C; 8÷18VDC; Ch: 2; Amp.class: AB
Case: FLEXIWATT27
Interface: I2C
Mounting: THT
Number of channels: 2
Impedance: 2Ω
Supply voltage: 8...18V DC
Output power: 75W
Amplifier class: AB
Type of integrated circuit: audio amplifier
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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LM833DT LM833DT.pdf
LM833DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
auf Bestellung 8307 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
157+0.46 EUR
175+0.41 EUR
186+0.39 EUR
209+0.34 EUR
242+0.3 EUR
268+0.27 EUR
271+0.26 EUR
Mindestbestellmenge: 157
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MC1458IDT MC1458ID.pdf
MC1458IDT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
Quiescent current: 2.3mA
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Bandwidth: 1MHz
auf Bestellung 6035 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
220+0.33 EUR
243+0.29 EUR
275+0.26 EUR
317+0.23 EUR
338+0.21 EUR
2500+0.2 EUR
Mindestbestellmenge: 179
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MC1458DT mc1458.pdf
MC1458DT
Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Case: SO8
Number of channels: 2
Kind of package: reel; tape
Mounting: SMT
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
Quiescent current: 2.3mA
Input offset voltage: 6mV
Slew rate: 0.8V/μs
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Bandwidth: 1MHz
auf Bestellung 1177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
131+0.55 EUR
145+0.49 EUR
166+0.43 EUR
197+0.36 EUR
250+0.33 EUR
500+0.31 EUR
1000+0.3 EUR
Mindestbestellmenge: 109
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LD39150PT-R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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LD39150PU-R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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LD39150PU33R ld39150.pdf
Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Produkt ist nicht verfügbar
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MMBTA42 MMBTA42.pdf
MMBTA42
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.5A; 0.35W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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STM32F373RCT6TR stm32f373c8.pdf
Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 3
Family: STM32F3
Kind of core: 32-bit
Produkt ist nicht verfügbar
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BUX10 CD00000944.pdf
BUX10
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 25A; 150W; TO3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 25A
Case: TO3
Mounting: THT
Power: 150W
Produkt ist nicht verfügbar
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LM339N suppproductinfo.tsp?distId=10&gotoUrl=http%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Flm339 LM339.pdf en.CD00000460.pdf lm339-d.pdf
LM339N
Hersteller: STMicroelectronics
Category: THT comparators
Description: IC: comparator; low-power; 1.3us; 2÷36V; Ch: 4; THT; DIP14
Type of integrated circuit: comparator
Kind of comparator: low-power
Delay time: 1.3µs
Operating voltage: 2...36V
Mounting: THT
Case: DIP14
Number of channels: 4
Produkt ist nicht verfügbar
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VIPER17HN en.CD00185039.pdf
Hersteller: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: driver
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.92 EUR
Mindestbestellmenge: 100
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