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IRF740A IRF740A Vishay Siliconix 91051.pdf description Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
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SIZ348DT-T1-GE3 SIZ348DT-T1-GE3 Vishay Siliconix siz348dt.pdf Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SIZ348DT-T1-GE3 SIZ348DT-T1-GE3 Vishay Siliconix siz348dt.pdf Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SIZ350DT-T1-GE3 SIZ350DT-T1-GE3 Vishay Siliconix siz350dt.pdf Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SIZ350DT-T1-GE3 SIZ350DT-T1-GE3 Vishay Siliconix siz350dt.pdf Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 7529 Stücke:
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500+0.95 EUR
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SUD80460E-GE3 SUD80460E-GE3 Vishay Siliconix sud80460e.pdf Description: MOSFET N-CH 150V 42A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Power Dissipation (Max): 65.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Produkt ist nicht verfügbar
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SUD80460E-GE3 SUD80460E-GE3 Vishay Siliconix sud80460e.pdf Description: MOSFET N-CH 150V 42A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Power Dissipation (Max): 65.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
auf Bestellung 1164 Stücke:
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SIR170DP-T1-RE3 SIR170DP-T1-RE3 Vishay Siliconix sir170dp.pdf Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
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IRF610 IRF610 Vishay Siliconix irl620.pdf description Description: MOSFET N-CH 200V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
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SI1480BDH-T1-GE3 SI1480BDH-T1-GE3 Vishay Siliconix si1480bdh.pdf Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
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SI1480BDH-T1-GE3 SI1480BDH-T1-GE3 Vishay Siliconix si1480bdh.pdf Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
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SIHFL110TR-GE3 SIHFL110TR-GE3 Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
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SIHFL110TR-GE3 SIHFL110TR-GE3 Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2480 Stücke:
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SIS128LDN-T1-GE3 SIS128LDN-T1-GE3 Vishay Siliconix sis128ldn.pdf Description: MOSFET N-CH 80V 10.2A/33.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
auf Bestellung 12000 Stücke:
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3000+0.58 EUR
6000+0.54 EUR
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SIS128LDN-T1-GE3 SIS128LDN-T1-GE3 Vishay Siliconix sis128ldn.pdf Description: MOSFET N-CH 80V 10.2A/33.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
auf Bestellung 13271 Stücke:
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SQJ416EP-T1_BE3 SQJ416EP-T1_BE3 Vishay Siliconix sqj416ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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SQJ416EP-T1_BE3 SQJ416EP-T1_BE3 Vishay Siliconix sqj416ep.pdf Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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SQRS152ELP-T1_GE3 SQRS152ELP-T1_GE3 Vishay Siliconix sqrs152elp.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8SW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SQRS152ELP-T1_GE3 SQRS152ELP-T1_GE3 Vishay Siliconix sqrs152elp.pdf Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8SW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2642 Stücke:
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100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
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SQJ138EP-T1_GE3 Vishay Siliconix sqj138ep.pdf Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Qualification: AEC-Q101
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SQJ138EP-T1_GE3 Vishay Siliconix sqj138ep.pdf Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 28243 Stücke:
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7+2.85 EUR
10+1.93 EUR
100+1.36 EUR
500+1.11 EUR
1000+1.03 EUR
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Si7972DP-T1-GE3 Si7972DP-T1-GE3 Vishay Siliconix si7972dp.pdf Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
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SISS66DN-T1-GE3 SISS66DN-T1-GE3 Vishay Siliconix siss66dn.pdf Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
auf Bestellung 3000 Stücke:
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SISS66DN-T1-GE3 SISS66DN-T1-GE3 Vishay Siliconix siss66dn.pdf Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
auf Bestellung 4584 Stücke:
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6+3.36 EUR
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500+1.15 EUR
1000+1.06 EUR
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SIPQ32433BDN-T1E3 SIPQ32433BDN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 2.8V ~ 22V
Current - Output: 3.5A
Accuracy: ±8%
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Grade: Automotive
Qualification: AEC-Q100
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SIPQ32433BDN-T1E3 SIPQ32433BDN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 2.8V ~ 22V
Current - Output: 3.5A
Accuracy: ±8%
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1860 Stücke:
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10+1.86 EUR
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SIPQ32434BDN-T1E3 SIPQ32434BDN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434BDN-T1E3 SIPQ32434BDN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434ADN-T1E3 SIPQ32434ADN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434ADN-T1E3 SIPQ32434ADN-T1E3 Vishay Siliconix sipq32434.pdf Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SQ3418AEEV-T1_BE3 SQ3418AEEV-T1_BE3 Vishay Siliconix sq3418aeev.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ3418AEEV-T1_BE3 SQ3418AEEV-T1_BE3 Vishay Siliconix sq3418aeev.pdf Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
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SISS60DN-T1-GE3 SISS60DN-T1-GE3 Vishay Siliconix siss60dn.pdf Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 3000 Stücke:
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SISS60DN-T1-GE3 SISS60DN-T1-GE3 Vishay Siliconix siss60dn.pdf Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 5995 Stücke:
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7+2.68 EUR
10+1.80 EUR
100+1.27 EUR
500+1.03 EUR
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SIRS4600DP-T1-RE3 SIRS4600DP-T1-RE3 Vishay Siliconix sirs4600dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V
auf Bestellung 3000 Stücke:
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3000+2.84 EUR
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SIRS4600DP-T1-RE3 SIRS4600DP-T1-RE3 Vishay Siliconix sirs4600dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V
auf Bestellung 3845 Stücke:
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3+7.27 EUR
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500+3.06 EUR
1000+2.85 EUR
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2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix 2n7002k.pdf Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 339000 Stücke:
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3000+0.12 EUR
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2N7002K-T1-E3 2N7002K-T1-E3 Vishay Siliconix 2n7002k.pdf Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 339874 Stücke:
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40+0.44 EUR
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SIB4317EDK-T1-GE3 SIB4317EDK-T1-GE3 Vishay Siliconix sib4317edk.pdf Description: P-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 6000 Stücke:
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3000+0.24 EUR
6000+0.23 EUR
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SIB4317EDK-T1-GE3 SIB4317EDK-T1-GE3 Vishay Siliconix sib4317edk.pdf Description: P-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 9499 Stücke:
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25+0.72 EUR
29+0.61 EUR
100+0.42 EUR
500+0.33 EUR
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IRF510 IRF510 Vishay Siliconix irf510.pdf Description: MOSFET N-CH 100V 5.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
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SQ4284EY-T1_BE3 SQ4284EY-T1_BE3 Vishay Siliconix doc?67334 Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+1.17 EUR
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SQ4284EY-T1_BE3 SQ4284EY-T1_BE3 Vishay Siliconix doc?67334 Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5062 Stücke:
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7+2.60 EUR
10+2.15 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.23 EUR
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DG412DY DG412DY Vishay Siliconix DG411-413.pdf Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG403DY DG403DY Vishay Siliconix DG401%2C403%2C405_Rev2009.pdf Description: IC SW SPST-NO/NCX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
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IRFU1N60APBF IRFU1N60APBF Vishay Siliconix sihfr1n6.pdf Description: MOSFET N-CH 600V 1.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
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525+1.09 EUR
1050+0.96 EUR
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SI2325DS-T1-BE3 SI2325DS-T1-BE3 Vishay Siliconix 73238.pdf Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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SI2325DS-T1-BE3 SI2325DS-T1-BE3 Vishay Siliconix 73238.pdf Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
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SI3453DV-T1-GE3 Vishay Siliconix si3453dv.pdf Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Produkt ist nicht verfügbar
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SI3453DV-T1-GE3 Vishay Siliconix si3453dv.pdf Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 1935 Stücke:
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SI3459BDV-T1-E3 SI3459BDV-T1-E3 Vishay Siliconix si3459bd.pdf Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
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SI3459BDV-T1-E3 SI3459BDV-T1-E3 Vishay Siliconix si3459bd.pdf Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 5833 Stücke:
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SI3430DV-T1-BE3 SI3430DV-T1-BE3 Vishay Siliconix si3430dv.pdf Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
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SI3430DV-T1-BE3 SI3430DV-T1-BE3 Vishay Siliconix si3430dv.pdf Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
auf Bestellung 5293 Stücke:
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SISS30DN-T1-GE3 SISS30DN-T1-GE3 Vishay Siliconix siss30dn.pdf Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
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SISS30DN-T1-GE3 SISS30DN-T1-GE3 Vishay Siliconix siss30dn.pdf Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 12697 Stücke:
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SQ4917EY-T1_GE3 SQ4917EY-T1_GE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
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SQ4917EY-T1_GE3 SQ4917EY-T1_GE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5308 Stücke:
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SIJ4106DP-T1-GE3 SIJ4106DP-T1-GE3 Vishay Siliconix sij4106dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
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SIJ4106DP-T1-GE3 SIJ4106DP-T1-GE3 Vishay Siliconix sij4106dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
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IRF740A description 91051.pdf
IRF740A
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
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SIZ348DT-T1-GE3 siz348dt.pdf
SIZ348DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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3000+0.73 EUR
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SIZ348DT-T1-GE3 siz348dt.pdf
SIZ348DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SIZ350DT-T1-GE3 siz350dt.pdf
SIZ350DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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SIZ350DT-T1-GE3 siz350dt.pdf
SIZ350DT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 940pF @ 15V
Rds On (Max) @ Id, Vgs: 6.75mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 7529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
13+1.43 EUR
100+1.12 EUR
500+0.95 EUR
1000+0.77 EUR
Mindestbestellmenge: 10
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SUD80460E-GE3 sud80460e.pdf
SUD80460E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 42A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Power Dissipation (Max): 65.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Produkt ist nicht verfügbar
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SUD80460E-GE3 sud80460e.pdf
SUD80460E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 42A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 44.7mOhm @ 8.3A, 10V
Power Dissipation (Max): 65.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
auf Bestellung 1164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.74 EUR
14+1.32 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 11
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SIR170DP-T1-RE3 sir170dp.pdf
SIR170DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 23.2A/95A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.36 EUR
6000+1.31 EUR
Mindestbestellmenge: 3000
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IRF610 description irl620.pdf
IRF610
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 3.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
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SI1480BDH-T1-GE3 si1480bdh.pdf
SI1480BDH-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
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SI1480BDH-T1-GE3 si1480bdh.pdf
SI1480BDH-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHNNEL 100-V (D-S) MOSFET SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 2.38A (Tc)
Rds On (Max) @ Id, Vgs: 212mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 206 pF @ 50 V
Produkt ist nicht verfügbar
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SIHFL110TR-GE3 sihfl110.pdf
SIHFL110TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
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SIHFL110TR-GE3 sihfl110.pdf
SIHFL110TR-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.50 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 17
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SIS128LDN-T1-GE3 sis128ldn.pdf
SIS128LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/33.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.58 EUR
6000+0.54 EUR
9000+0.52 EUR
Mindestbestellmenge: 3000
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SIS128LDN-T1-GE3 sis128ldn.pdf
SIS128LDN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 10.2A/33.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
auf Bestellung 13271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.42 EUR
100+0.94 EUR
500+0.73 EUR
1000+0.67 EUR
Mindestbestellmenge: 8
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SQJ416EP-T1_BE3 sqj416ep.pdf
SQJ416EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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SQJ416EP-T1_BE3 sqj416ep.pdf
SQJ416EP-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100-V (D-S) 175C MOSFE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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SQRS152ELP-T1_GE3 sqrs152elp.pdf
SQRS152ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8SW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQRS152ELP-T1_GE3 sqrs152elp.pdf
SQRS152ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8SW
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2642 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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SQJ138EP-T1_GE3 sqj138ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.95 EUR
Mindestbestellmenge: 3000
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SQJ138EP-T1_GE3 sqj138ep.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 28243 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.93 EUR
100+1.36 EUR
500+1.11 EUR
1000+1.03 EUR
Mindestbestellmenge: 7
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Si7972DP-T1-GE3 si7972dp.pdf
Si7972DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2 N-CH 30V POWERPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 22W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 30V
Rds On (Max) @ Id, Vgs: 18mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
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SISS66DN-T1-GE3 siss66dn.pdf
SISS66DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.89 EUR
Mindestbestellmenge: 3000
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SISS66DN-T1-GE3 siss66dn.pdf
SISS66DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 49.1/178.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.38mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3327 pF @ 15 V
auf Bestellung 4584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.14 EUR
100+1.45 EUR
500+1.15 EUR
1000+1.06 EUR
Mindestbestellmenge: 6
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SIPQ32433BDN-T1E3 sipq32434.pdf
SIPQ32433BDN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 2.8V ~ 22V
Current - Output: 3.5A
Accuracy: ±8%
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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SIPQ32433BDN-T1E3 sipq32434.pdf
SIPQ32433BDN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Sensing Method: High-Side
Mounting Type: Surface Mount
Function: Electronic Fuse
Voltage - Input: 2.8V ~ 22V
Current - Output: 3.5A
Accuracy: ±8%
Operating Temperature: -40°C ~ 125°C (TJ)
Supplier Device Package: 10-DFN (3x3)
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
10+1.86 EUR
25+1.69 EUR
100+1.50 EUR
250+1.41 EUR
500+1.36 EUR
1000+1.31 EUR
Mindestbestellmenge: 7
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SIPQ32434BDN-T1E3 sipq32434.pdf
SIPQ32434BDN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434BDN-T1E3 sipq32434.pdf
SIPQ32434BDN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434ADN-T1E3 sipq32434.pdf
SIPQ32434ADN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Tape & Reel (TR)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SIPQ32434ADN-T1E3 sipq32434.pdf
SIPQ32434ADN-T1E3
Hersteller: Vishay Siliconix
Description: LOAD SWITCH W/ PROGRAMMABLE OVP
Packaging: Cut Tape (CT)
Features: Power Good, Slew Rate Controlled, Status Flag
Package / Case: 10-VFDFN Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 33mOhm
Input Type: Non-Inverting
Voltage - Load: 2.8V ~ 23V
Voltage - Supply (Vcc/Vdd): 2.8V ~ 23V
Current - Output (Max): 6A
Ratio - Input:Output: 1:1
Supplier Device Package: 10-DFN (3x3)
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit, UVLO
Produkt ist nicht verfügbar
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SQ3418AEEV-T1_BE3 sq3418aeev.pdf
SQ3418AEEV-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQ3418AEEV-T1_BE3 sq3418aeev.pdf
SQ3418AEEV-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.44 EUR
15+1.18 EUR
100+0.92 EUR
500+0.78 EUR
1000+0.63 EUR
Mindestbestellmenge: 13
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SISS60DN-T1-GE3 siss60dn.pdf
SISS60DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.87 EUR
Mindestbestellmenge: 3000
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SISS60DN-T1-GE3 siss60dn.pdf
SISS60DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50.1/181.8A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.1A (Ta), 181.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.31mOhm @ 20A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3960 pF @ 15 V
auf Bestellung 5995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+1.80 EUR
100+1.27 EUR
500+1.03 EUR
1000+0.96 EUR
Mindestbestellmenge: 7
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SIRS4600DP-T1-RE3 sirs4600dp.pdf
SIRS4600DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.84 EUR
Mindestbestellmenge: 3000
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SIRS4600DP-T1-RE3 sirs4600dp.pdf
SIRS4600DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 334A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7655 pF @ 30 V
auf Bestellung 3845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
10+5.20 EUR
100+3.70 EUR
500+3.06 EUR
1000+2.85 EUR
Mindestbestellmenge: 3
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2N7002K-T1-E3 2n7002k.pdf
2N7002K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 339000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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2N7002K-T1-E3 2n7002k.pdf
2N7002K-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 300MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 339874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
69+0.26 EUR
124+0.14 EUR
Mindestbestellmenge: 40
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SIB4317EDK-T1-GE3 sib4317edk.pdf
SIB4317EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.23 EUR
Mindestbestellmenge: 3000
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SIB4317EDK-T1-GE3 sib4317edk.pdf
SIB4317EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-75-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 10V
Power Dissipation (Max): 1.95W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerPAK® SC-75-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 15 V
auf Bestellung 9499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
29+0.61 EUR
100+0.42 EUR
500+0.33 EUR
1000+0.27 EUR
Mindestbestellmenge: 25
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IRF510 irf510.pdf
IRF510
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 3.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
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SQ4284EY-T1_BE3 doc?67334
SQ4284EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.17 EUR
Mindestbestellmenge: 2500
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SQ4284EY-T1_BE3 doc?67334
SQ4284EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5062 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
10+2.15 EUR
100+1.71 EUR
500+1.45 EUR
1000+1.23 EUR
Mindestbestellmenge: 7
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DG412DY DG411-413.pdf
DG412DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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DG403DY DG401%2C403%2C405_Rev2009.pdf
DG403DY
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 45OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -90dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
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IRFU1N60APBF sihfr1n6.pdf
IRFU1N60APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 1.4A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.03 EUR
75+1.37 EUR
150+1.29 EUR
525+1.09 EUR
1050+0.96 EUR
Mindestbestellmenge: 6
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SI2325DS-T1-BE3 73238.pdf
SI2325DS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar
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SI2325DS-T1-BE3 73238.pdf
SI2325DS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 1959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
11+1.62 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.77 EUR
Mindestbestellmenge: 7
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SI3453DV-T1-GE3 si3453dv.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Produkt ist nicht verfügbar
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SI3453DV-T1-GE3 si3453dv.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CHANNEL 30V 3.4A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 2.5A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 1935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
34+0.53 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.22 EUR
Mindestbestellmenge: 26
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SI3459BDV-T1-E3 si3459bd.pdf
SI3459BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.52 EUR
Mindestbestellmenge: 3000
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SI3459BDV-T1-E3 si3459bd.pdf
SI3459BDV-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 216mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 30 V
auf Bestellung 5833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
14+1.28 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.60 EUR
Mindestbestellmenge: 9
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SI3430DV-T1-BE3 si3430dv.pdf
SI3430DV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.80 EUR
Mindestbestellmenge: 3000
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SI3430DV-T1-BE3 si3430dv.pdf
SI3430DV-T1-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
auf Bestellung 5293 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
12+1.58 EUR
100+1.23 EUR
500+1.04 EUR
1000+0.85 EUR
Mindestbestellmenge: 10
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SISS30DN-T1-GE3 siss30dn.pdf
SISS30DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.66 EUR
6000+0.65 EUR
Mindestbestellmenge: 3000
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SISS30DN-T1-GE3 siss30dn.pdf
SISS30DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 15.9A/54.7A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 54.7A (Tc)
Rds On (Max) @ Id, Vgs: 8.25mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 10 V
auf Bestellung 12697 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
13+1.42 EUR
100+0.99 EUR
500+0.80 EUR
1000+0.74 EUR
Mindestbestellmenge: 9
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SQ4917EY-T1_GE3 sq4917ey.pdf
SQ4917EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.24 EUR
Mindestbestellmenge: 2500
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SQ4917EY-T1_GE3 sq4917ey.pdf
SQ4917EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+2.69 EUR
100+1.84 EUR
500+1.48 EUR
1000+1.36 EUR
Mindestbestellmenge: 5
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SIJ4106DP-T1-GE3 sij4106dp.pdf
SIJ4106DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.26 EUR
6000+1.21 EUR
Mindestbestellmenge: 3000
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SIJ4106DP-T1-GE3 sij4106dp.pdf
SIJ4106DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.31 EUR
100+1.84 EUR
500+1.56 EUR
1000+1.32 EUR
Mindestbestellmenge: 7
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