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SQ4917EY-T1_GE3 SQ4917EY-T1_GE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
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2500+1.28 EUR
5000+ 1.23 EUR
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SQ4917EY-T1_GE3 SQ4917EY-T1_GE3 Vishay Siliconix sq4917ey.pdf Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8894 Stücke:
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10+ 2.36 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 7
SIJ4106DP-T1-GE3 SIJ4106DP-T1-GE3 Vishay Siliconix sij4106dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Produkt ist nicht verfügbar
SIJ4106DP-T1-GE3 SIJ4106DP-T1-GE3 Vishay Siliconix sij4106dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Produkt ist nicht verfügbar
DG409DJ DG409DJ Vishay Siliconix DG408_DG409.pdf description Description: IC SWITCH SP4T X 2 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
SQSA70CENW-T1_GE3 SQSA70CENW-T1_GE3 Vishay Siliconix sqsa70cenw.pdf Description: AUTOMOTIVE N-CHANNEL 150 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68.5mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 30000 Stücke:
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9000+ 0.58 EUR
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SQSA70CENW-T1_GE3 SQSA70CENW-T1_GE3 Vishay Siliconix sqsa70cenw.pdf Description: AUTOMOTIVE N-CHANNEL 150 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68.5mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 31563 Stücke:
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14+ 1.27 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SQ3426AEEV-T1_GE3 SQ3426AEEV-T1_GE3 Vishay Siliconix sq3426eev.pdf Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
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3000+0.42 EUR
6000+ 0.39 EUR
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SiRS4401DP-T1-GE3 SiRS4401DP-T1-GE3 Vishay Siliconix sirs4401dp.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V
auf Bestellung 9000 Stücke:
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3000+2.54 EUR
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SiRS4401DP-T1-GE3 SiRS4401DP-T1-GE3 Vishay Siliconix sirs4401dp.pdf Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V
auf Bestellung 10793 Stücke:
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4+5.21 EUR
10+ 4.38 EUR
100+ 3.54 EUR
500+ 3.15 EUR
1000+ 2.69 EUR
Mindestbestellmenge: 4
SiRS4301DP-T1-GE3 Vishay Siliconix sirs4301dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+2.64 EUR
Mindestbestellmenge: 3000
SiRS4301DP-T1-GE3 Vishay Siliconix sirs4301dp.pdf Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
auf Bestellung 5720 Stücke:
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100+ 3.68 EUR
500+ 3.28 EUR
1000+ 2.8 EUR
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SiRS4302DP-T1-GE3 SiRS4302DP-T1-GE3 Vishay Siliconix sirs4302dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V
Produkt ist nicht verfügbar
SiRS4302DP-T1-GE3 SiRS4302DP-T1-GE3 Vishay Siliconix sirs4302dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V
Produkt ist nicht verfügbar
SIRS5800DP-T1-GE3 SIRS5800DP-T1-GE3 Vishay Siliconix sirs5800dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
Produkt ist nicht verfügbar
SIRS5800DP-T1-GE3 SIRS5800DP-T1-GE3 Vishay Siliconix sirs5800dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
Produkt ist nicht verfügbar
SIRS4400DP-T1-RE3 SIRS4400DP-T1-RE3 Vishay Siliconix sirs4400dp.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
Produkt ist nicht verfügbar
SIRS4400DP-T1-RE3 SIRS4400DP-T1-RE3 Vishay Siliconix sirs4400dp.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
Produkt ist nicht verfügbar
DGQ4051EEQ-T1-GE4 DGQ4051EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DGQ4051EEQ-T1-GE4 DGQ4051EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
SQD30N05-20L_T4GE3 Vishay Siliconix sqd30n05-20l.pdf Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Produkt ist nicht verfügbar
SI2315BDS-T1-BE3 SI2315BDS-T1-BE3 Vishay Siliconix 72014.pdf Description: P-CHANNEL 1.8-V (G-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.29 EUR
Mindestbestellmenge: 3000
SI2315BDS-T1-BE3 SI2315BDS-T1-BE3 Vishay Siliconix 72014.pdf Description: P-CHANNEL 1.8-V (G-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 5758 Stücke:
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2N4392 Vishay Siliconix 2N%2CPN%2CSST4391.pdf description Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
SIHP085N60EF-GE3 SIHP085N60EF-GE3 Vishay Siliconix sihp085n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V
Produkt ist nicht verfügbar
SI3440ADV-T1-BE3 SI3440ADV-T1-BE3 Vishay Siliconix si3440adv.pdf Description: N-CHANNEL 150-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V
Produkt ist nicht verfügbar
SI3440ADV-T1-BE3 SI3440ADV-T1-BE3 Vishay Siliconix si3440adv.pdf Description: N-CHANNEL 150-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V
Produkt ist nicht verfügbar
SQS462EN-T1_BE3 SQS462EN-T1_BE3 Vishay Siliconix sqs462en.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SQS462EN-T1_BE3 SQS462EN-T1_BE3 Vishay Siliconix sqs462en.pdf Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
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SIHFR9120-GE3 SIHFR9120-GE3 Vishay Siliconix sihfr912.pdf Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
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2N7002E-T1-E3 2N7002E-T1-E3 Vishay Siliconix 2n7002e.pdf Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar
2N7002E-T1-E3 2N7002E-T1-E3 Vishay Siliconix 2n7002e.pdf Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
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DG401DJ DG401DJ Vishay Siliconix DG401,403,405_Rev2009.pdf Description: IC SWITCH SPST-NOX2 45OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
SIZF4800LDT-T1-GE3 SIZF4800LDT-T1-GE3 Vishay Siliconix sizf4800ldt.pdf Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
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SIZF4800LDT-T1-GE3 SIZF4800LDT-T1-GE3 Vishay Siliconix sizf4800ldt.pdf Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
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SISS5112DN-T1-GE3 SISS5112DN-T1-GE3 Vishay Siliconix siss5112dn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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SISS5112DN-T1-GE3 SISS5112DN-T1-GE3 Vishay Siliconix siss5112dn.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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DGQ4052EEQ-T1-GE4 DGQ4052EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SP4T - NO/NC
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DGQ4052EEQ-T1-GE4 DGQ4052EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SP4T - NO/NC
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DGQ4053EEQ-T1-GE4 DGQ4053EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
Produkt ist nicht verfügbar
DGQ4053EEQ-T1-GE4 DGQ4053EEQ-T1-GE4 Vishay Siliconix dgq4051e_dgq4052e_dgq4053e.pdf Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
Produkt ist nicht verfügbar
SUD23N06-31-T4-GE3 SUD23N06-31-T4-GE3 Vishay Siliconix sud23n06.pdf Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD23N06-31-T4-GE3 SUD23N06-31-T4-GE3 Vishay Siliconix sud23n06.pdf Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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SI1330EDL-T1-GE3 SI1330EDL-T1-GE3 Vishay Siliconix si1330ed.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1330EDL-T1-GE3 SI1330EDL-T1-GE3 Vishay Siliconix si1330ed.pdf Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
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IRF634 IRF634 Vishay Siliconix irf634.pdf Description: MOSFET N-CH 250V 8.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Produkt ist nicht verfügbar
SIR846BDP-T1-RE3 SIR846BDP-T1-RE3 Vishay Siliconix sir846bdp.pdf Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.1 EUR
Mindestbestellmenge: 3000
SQ4050EY-T1_BE3 SQ4050EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CHANNEL 40V 19A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
auf Bestellung 7500 Stücke:
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5000+ 0.66 EUR
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SQ4050EY-T1_BE3 SQ4050EY-T1_BE3 Vishay Siliconix Description: MOSFET N-CHANNEL 40V 19A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
auf Bestellung 7768 Stücke:
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500+ 0.91 EUR
1000+ 0.74 EUR
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SIP12116DMP-T1-GE4 SIP12116DMP-T1-GE4 Vishay Siliconix sip12116.pdf Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
SIP12116DMP-T1-GE4 SIP12116DMP-T1-GE4 Vishay Siliconix sip12116.pdf Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2475 Stücke:
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10+1.85 EUR
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SIP12110DMP-T1-GE4 SIP12110DMP-T1-GE4 Vishay Siliconix sip12110.pdf Description: IC REG BUCK ADJ 6A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
SIP12109DB Vishay Siliconix sip12109.pdf Description: SIP12109 DEMO BOARD-4.5V TO 15V
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 4A
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12109
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12110DB Vishay Siliconix sip12110.pdf Description: 6A,4.5V TO 15V INPUT SYNCHRONOUS
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 6A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12110
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12116DB SiP12116DB Vishay Siliconix sip12116.pdf Description: 3A CURRENT MODE SYNCHRONOUS BUCK
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 3A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12116
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12117DB Vishay Siliconix sip12117.pdf Description: 3A BUCK REGULATOR DEMOBOARD
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 3A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12117
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC951ED-T1-GE3 SIC951ED-T1-GE3 Vishay Siliconix sic951.pdf Description: 4.5 - 20V, INPUT25A MICROBRICK R
Packaging: Tape & Reel (TR)
Features: Adjustable Output, Remote On/Off, Remote Sense
Package / Case: 60-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 20V
Efficiency: 97%
Current - Output (Max): 25A
Supplier Device Package: PowerPAK® MLP60-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.3 ~ 5.5V
Number of Outputs: 1
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
1050+23.23 EUR
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SIC951ED-T1-GE3 SIC951ED-T1-GE3 Vishay Siliconix sic951.pdf Description: 4.5 - 20V, INPUT25A MICROBRICK R
Packaging: Cut Tape (CT)
Features: Adjustable Output, Remote On/Off, Remote Sense
Package / Case: 60-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 20V
Efficiency: 97%
Current - Output (Max): 25A
Supplier Device Package: PowerPAK® MLP60-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.3 ~ 5.5V
Number of Outputs: 1
auf Bestellung 1100 Stücke:
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1+34.5 EUR
10+ 31.81 EUR
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100+ 27.17 EUR
250+ 25.91 EUR
500+ 24.66 EUR
SQJQ186ER-T1_GE3 SQJQ186ER-T1_GE3 Vishay Siliconix sqjq186er.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 329A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJQ186ER-T1_GE3 SQJQ186ER-T1_GE3 Vishay Siliconix sqjq186er.pdf Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 329A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQ4917EY-T1_GE3 sq4917ey.pdf
SQ4917EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.28 EUR
5000+ 1.23 EUR
Mindestbestellmenge: 2500
SQ4917EY-T1_GE3 sq4917ey.pdf
SQ4917EY-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 60V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1910pF @ 30V
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.83 EUR
10+ 2.36 EUR
100+ 1.88 EUR
500+ 1.59 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 7
SIJ4106DP-T1-GE3 sij4106dp.pdf
SIJ4106DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Produkt ist nicht verfügbar
SIJ4106DP-T1-GE3 sij4106dp.pdf
SIJ4106DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Produkt ist nicht verfügbar
DG409DJ description DG408_DG409.pdf
DG409DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 14pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
SQSA70CENW-T1_GE3 sqsa70cenw.pdf
SQSA70CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 150 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68.5mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.64 EUR
6000+ 0.61 EUR
9000+ 0.58 EUR
Mindestbestellmenge: 3000
SQSA70CENW-T1_GE3 sqsa70cenw.pdf
SQSA70CENW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 150 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 68.5mOhm @ 7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 31563 Stücke:
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Anzahl Preis ohne MwSt
12+1.55 EUR
14+ 1.27 EUR
100+ 0.98 EUR
500+ 0.83 EUR
1000+ 0.68 EUR
Mindestbestellmenge: 12
SQ3426AEEV-T1_GE3 sq3426eev.pdf
SQ3426AEEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.42 EUR
6000+ 0.39 EUR
Mindestbestellmenge: 3000
SiRS4401DP-T1-GE3 sirs4401dp.pdf
SiRS4401DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V
auf Bestellung 9000 Stücke:
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Anzahl Preis ohne MwSt
3000+2.54 EUR
6000+ 2.43 EUR
Mindestbestellmenge: 3000
SiRS4401DP-T1-GE3 sirs4401dp.pdf
SiRS4401DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 46.8A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 588 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21850 pF @ 20 V
auf Bestellung 10793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.21 EUR
10+ 4.38 EUR
100+ 3.54 EUR
500+ 3.15 EUR
1000+ 2.69 EUR
Mindestbestellmenge: 4
SiRS4301DP-T1-GE3 sirs4301dp.pdf
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+2.64 EUR
Mindestbestellmenge: 3000
SiRS4301DP-T1-GE3 sirs4301dp.pdf
Hersteller: Vishay Siliconix
Description: P-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 53.7A (Ta), 227A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 19750 pF @ 15 V
auf Bestellung 5720 Stücke:
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500+ 3.28 EUR
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Mindestbestellmenge: 4
SiRS4302DP-T1-GE3 sirs4302dp.pdf
SiRS4302DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V
Produkt ist nicht verfügbar
SiRS4302DP-T1-GE3 sirs4302dp.pdf
SiRS4302DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V
Power Dissipation (Max): 6.9W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V
Produkt ist nicht verfügbar
SIRS5800DP-T1-GE3 sirs5800dp.pdf
SIRS5800DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
Produkt ist nicht verfügbar
SIRS5800DP-T1-GE3 sirs5800dp.pdf
SIRS5800DP-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V
Produkt ist nicht verfügbar
SIRS4400DP-T1-RE3 sirs4400dp.pdf
SIRS4400DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
Produkt ist nicht verfügbar
SIRS4400DP-T1-RE3 sirs4400dp.pdf
SIRS4400DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
Produkt ist nicht verfügbar
DGQ4051EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4051EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DGQ4051EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4051EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 308MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.2pF, 9.2pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
SQD30N05-20L_T4GE3 sqd30n05-20l.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 55V 30A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1175 pF @ 25 V
Produkt ist nicht verfügbar
SI2315BDS-T1-BE3 72014.pdf
SI2315BDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 1.8-V (G-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
Mindestbestellmenge: 3000
SI2315BDS-T1-BE3 72014.pdf
SI2315BDS-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 1.8-V (G-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 5758 Stücke:
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Anzahl Preis ohne MwSt
21+0.86 EUR
24+ 0.74 EUR
100+ 0.51 EUR
500+ 0.4 EUR
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2N4392 description 2N%2CPN%2CSST4391.pdf
Hersteller: Vishay Siliconix
Description: JFET N-CH 40V TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AA (TO-18)
Power - Max: 1.8 W
Resistance - RDS(On): 60 Ohms
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 25 mA @ 20 V
Produkt ist nicht verfügbar
SIHP085N60EF-GE3 sihp085n60ef.pdf
SIHP085N60EF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V
Produkt ist nicht verfügbar
SI3440ADV-T1-BE3 si3440adv.pdf
SI3440ADV-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V
Produkt ist nicht verfügbar
SI3440ADV-T1-BE3 si3440adv.pdf
SI3440ADV-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.5A, 10V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 75 V
Produkt ist nicht verfügbar
SQS462EN-T1_BE3 sqs462en.pdf
SQS462EN-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.68 EUR
6000+ 0.65 EUR
9000+ 0.62 EUR
Mindestbestellmenge: 3000
SQS462EN-T1_BE3 sqs462en.pdf
SQS462EN-T1_BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 4.3A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
auf Bestellung 12090 Stücke:
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11+1.65 EUR
14+ 1.35 EUR
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1000+ 0.73 EUR
Mindestbestellmenge: 11
SIHFR9120-GE3 sihfr912.pdf
SIHFR9120-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 175 Stücke:
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Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 1.01 EUR
100+ 0.7 EUR
Mindestbestellmenge: 16
2N7002E-T1-E3 2n7002e.pdf
2N7002E-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Produkt ist nicht verfügbar
2N7002E-T1-E3 2n7002e.pdf
2N7002E-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 250mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
auf Bestellung 2192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1 EUR
21+ 0.86 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 18
DG401DJ DG401,403,405_Rev2009.pdf
DG401DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX2 45OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
SIZF4800LDT-T1-GE3 sizf4800ldt.pdf
SIZF4800LDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.14 EUR
6000+ 1.1 EUR
Mindestbestellmenge: 3000
SIZF4800LDT-T1-GE3 sizf4800ldt.pdf
SIZF4800LDT-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.52 EUR
10+ 2.1 EUR
100+ 1.67 EUR
500+ 1.41 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 7
SISS5112DN-T1-GE3 siss5112dn.pdf
SISS5112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.01 EUR
6000+ 0.96 EUR
9000+ 0.91 EUR
Mindestbestellmenge: 3000
SISS5112DN-T1-GE3 siss5112dn.pdf
SISS5112DN-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40.7A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 8
DGQ4052EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4052EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SP4T - NO/NC
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DGQ4052EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4052EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 353MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SP4T - NO/NC
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.8pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DGQ4053EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4053EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
Produkt ist nicht verfügbar
DGQ4053EEQ-T1-GE4 dgq4051e_dgq4052e_dgq4053e.pdf
DGQ4053EEQ-T1-GE4
Hersteller: Vishay Siliconix
Description: 8 CHANNEL MUX DUAL 4 CH MUX, TRI
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 103Ohm
-3db Bandwidth: 930MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 3V ~ 16V
Charge Injection: 0.38pC
Crosstalk: -51dB @ 100MHz
Switch Circuit: SPDT - NO/NC
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1.24Ohm
Switch Time (Ton, Toff) (Max): 62ns, 87ns
Channel Capacitance (CS(off), CD(off)): 2pF, 3.1pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 3
Produkt ist nicht verfügbar
SUD23N06-31-T4-GE3 sud23n06.pdf
SUD23N06-31-T4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
SUD23N06-31-T4-GE3 sud23n06.pdf
SUD23N06-31-T4-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 21.4A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.4A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 15A, 10V
Power Dissipation (Max): 5.7W (Ta), 31.25W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.15 EUR
11+ 1.75 EUR
100+ 1.36 EUR
500+ 1.16 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 9
SI1330EDL-T1-GE3 si1330ed.pdf
SI1330EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1330EDL-T1-GE3 si1330ed.pdf
SI1330EDL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 250mA, 10V
Power Dissipation (Max): 280mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-70-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
auf Bestellung 2920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
25+ 0.72 EUR
100+ 0.54 EUR
500+ 0.42 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 22
IRF634 irf634.pdf
IRF634
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 8.1A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
Produkt ist nicht verfügbar
SIR846BDP-T1-RE3 sir846bdp.pdf
SIR846BDP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A/65.8 PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8 (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.1 EUR
Mindestbestellmenge: 3000
SQ4050EY-T1_BE3
SQ4050EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 40V 19A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.66 EUR
Mindestbestellmenge: 2500
SQ4050EY-T1_BE3
SQ4050EY-T1_BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 40V 19A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 10A, 10V
Power Dissipation (Max): 6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2406 pF @ 20 V
auf Bestellung 7768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.69 EUR
13+ 1.38 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
Mindestbestellmenge: 11
SIP12116DMP-T1-GE4 sip12116.pdf
SIP12116DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
SIP12116DMP-T1-GE4 sip12116.pdf
SIP12116DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 3A 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 600kHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 10-DFN (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.85 EUR
11+ 1.66 EUR
25+ 1.57 EUR
100+ 1.29 EUR
250+ 1.21 EUR
500+ 1.07 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 10
SIP12110DMP-T1-GE4 sip12110.pdf
SIP12110DMP-T1-GE4
Hersteller: Vishay Siliconix
Description: IC REG BUCK ADJ 6A 16MLP
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 1MHz
Voltage - Input (Max): 15V
Topology: Buck
Supplier Device Package: 16-MLP (3x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 0.6V
Produkt ist nicht verfügbar
SIP12109DB sip12109.pdf
Hersteller: Vishay Siliconix
Description: SIP12109 DEMO BOARD-4.5V TO 15V
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 4A
Frequency - Switching: 1.5MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12109
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12110DB sip12110.pdf
Hersteller: Vishay Siliconix
Description: 6A,4.5V TO 15V INPUT SYNCHRONOUS
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 6A
Frequency - Switching: 1MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SiP12110
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12116DB sip12116.pdf
SiP12116DB
Hersteller: Vishay Siliconix
Description: 3A CURRENT MODE SYNCHRONOUS BUCK
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 3A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12116
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SiP12117DB sip12117.pdf
Hersteller: Vishay Siliconix
Description: 3A BUCK REGULATOR DEMOBOARD
Packaging: Bulk
Voltage - Output: 0.6V ~ 5.5V
Voltage - Input: 4.5V ~ 15V
Current - Output: 3A
Frequency - Switching: 600kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: SIP12117
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down
Outputs and Type: 1, Non-Isolated
Produkt ist nicht verfügbar
SIC951ED-T1-GE3 sic951.pdf
SIC951ED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 20V, INPUT25A MICROBRICK R
Packaging: Tape & Reel (TR)
Features: Adjustable Output, Remote On/Off, Remote Sense
Package / Case: 60-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 20V
Efficiency: 97%
Current - Output (Max): 25A
Supplier Device Package: PowerPAK® MLP60-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.3 ~ 5.5V
Number of Outputs: 1
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1050+23.23 EUR
Mindestbestellmenge: 1050
SIC951ED-T1-GE3 sic951.pdf
SIC951ED-T1-GE3
Hersteller: Vishay Siliconix
Description: 4.5 - 20V, INPUT25A MICROBRICK R
Packaging: Cut Tape (CT)
Features: Adjustable Output, Remote On/Off, Remote Sense
Package / Case: 60-PowerBFQFN
Size / Dimension: 0.42" L x 0.26" W x 0.12" H (10.6mm x 6.5mm x 3.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 85°C
Applications: ITE (Commercial)
Voltage - Input (Max): 20V
Efficiency: 97%
Current - Output (Max): 25A
Supplier Device Package: PowerPAK® MLP60-A6C
Voltage - Input (Min): 4.5V
Voltage - Output 1: 0.3 ~ 5.5V
Number of Outputs: 1
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+34.5 EUR
10+ 31.81 EUR
25+ 30.38 EUR
100+ 27.17 EUR
250+ 25.91 EUR
500+ 24.66 EUR
SQJQ186ER-T1_GE3 sqjq186er.pdf
SQJQ186ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 329A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SQJQ186ER-T1_GE3 sqjq186er.pdf
SQJQ186ER-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 329A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10552 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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