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SQS120ELNW-T1_GE3 SQS120ELNW-T1_GE3 Vishay Siliconix sqs120elnw.pdf Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
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SQS124ELNW-T1_GE3 SQS124ELNW-T1_GE3 Vishay Siliconix sqs124elnw.pdf Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V
Qualification: AEC-Q101
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IRF530 IRF530 Vishay Siliconix irf530.pdf Description: MOSFET N-CH 100V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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IRF710 IRF710 Vishay Siliconix 91041.pdf description Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRFP460 IRFP460 Vishay Siliconix 91237.pdf Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IRF9530 IRF9530 Vishay Siliconix IRF9530.pdf description Description: MOSFET P-CH 100V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
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IRF520 IRF520 Vishay Siliconix irl620.pdf Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
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SIHF9630S-GE3 SIHF9630S-GE3 Vishay Siliconix sihf9630.pdf Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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SISS26LDN-T1-UE3 SISS26LDN-T1-UE3 Vishay Siliconix siss26ldn.pdf Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
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SISS26LDN-T1-UE3 SISS26LDN-T1-UE3 Vishay Siliconix siss26ldn.pdf Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
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IRF9510 IRF9510 Vishay Siliconix 91072.pdf description Description: MOSFET P-CH 100V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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DG413DY DG413DY Vishay Siliconix DG411-413.pdf Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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2N6661 2N6661 Vishay Siliconix 2N6661%282%29%2C2N6661JANTX%28V%29.pdf Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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IRF830 IRF830 Vishay Siliconix irl620.pdf description Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
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SIR570DP-T1-BE3 SIR570DP-T1-BE3 Vishay Siliconix sir570dp.pdf Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
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SIR570DP-T1-BE3 SIR570DP-T1-BE3 Vishay Siliconix sir570dp.pdf Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
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2N5116 Vishay Siliconix 2N5114-5116.PDF 124387-lds-0006 Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar
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IRFD110 IRFD110 Vishay Siliconix sihfd110.pdf description Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
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IRF540 IRF540 Vishay Siliconix irf540.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF730 IRF730 Vishay Siliconix 91047.pdf Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF9630 IRF9630 Vishay Siliconix IRF9630%2CSiHF9630.pdf Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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IRFR9220TRRPBF IRFR9220TRRPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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IRFR9220TRRPBF IRFR9220TRRPBF Vishay Siliconix sihfr922.pdf Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
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DG409DY DG409DY Vishay Siliconix DG408_DG409.pdf Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
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IRLZ44STRRPBF IRLZ44STRRPBF Vishay Siliconix sihlz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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IRLZ44STRRPBF IRLZ44STRRPBF Vishay Siliconix sihlz44s.pdf Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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DG301AAA Vishay Siliconix DG300A_MIL301A_MIL302A_MIL.pdf Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
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DG201BDY-T1-E3 Vishay Siliconix dg201b.pdf Аналоговий комутатор; К-сть вх/вих = 4 1:1 SPST - NC; rDS(on), Ом = 85; Uживл, В = 4,5...25; ) ±4,5...22; Тексп, °C = -40...+85; ton = 300 нс; toff = 200 нс; SOICN-16
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DG4051EEQ-T1-GE3 Vishay Siliconix dg4051e.pdf Аналоговий комутатор; К-сть вх/вих = 1; rDS(on), Ом = 78; Uживл, В = 3...16; Тексп, °C = -40...+125; ton = 75 нс; toff = 88 нс; Співвідн. = 8:1; F(3 дБ) = 308 МГц; TSSOP-16
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DG419DY-E3 Vishay Siliconix dg417.pdf Аналоговий комутатор; Io = 1 нА; rDS(on), Ом = 40; Uживл, В = 12, ±15; Кіл. вх/вих = 1 x SPDT - NC/NO; Тексп, °С = -40...+85; ton = 175 нс; toff = 145 нс; SOICN-8
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DG441DJ Vishay Siliconix DG441-DG442.pdf Аналоговий комутатор; Io = 15 мкА; rDS(on), Ом = 85; Uживл, В = 12; ±15; Кіл. вх/вих = 4 x SPST - NC; Тексп, °С = -40...+85; ton = 250 нс; toff = 120 нс; DIP-16
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DG9424DQ-T1-E3 Vishay Siliconix dg9424.pdf Id, мА = 100; Umax (сток-исток), В = 16; Uживл, В = 3-16; К-сть. драйв./прийм, шт = 4; Тексп, °С = -40-85; TSSOP-16
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SI9112DY-T1-E3 Vishay Siliconix si9112.pdf ШІМ-регулятор; Fosc = 3 МГц; Iвих = 10 мА; Uживл, В = 9,5...13,5; К-сть. вих. = 1; К-т заповн, % = 50; Тексп, °С = -40...+85; Push-Pull СН прямого/зворотного ходу; SOICN-14
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SI7272DP-T1-GE3 Vishay Siliconix si7272dp.pdf 2N-канальний ПТ; Udss, В = 30; Id = 25; Ciss, пФ @ Uds, В = 1100 @ 15; Qg, нКл = 26; Rds = 9,3 мОм; Ugs(th) = 2,5 В; Р, Вт = 22; Тексп, °C = -55...+150; Тип монт. = smd; POWERPACK SOIC-8
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SI9945BDY-T1-GE3 Vishay Siliconix si9945bdy.pdf 2N-канальний ПТ; Udss, В = 60; Id = 5,3 A; Ciss, пФ @ Uds, В = 665 @ 15; Qg, нКл = 20 @ 10 В; Rds = 58 мОм @ 4,3 А, 10 В; Ugs(th) = 3 В @ 250 мкА; Р, Вт = 3,1 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
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SIR882ADP-T1-GE3 Vishay Siliconix sir882adp.pdf N-канальний ПТ; Udss, В = 100; Id = 60 А; Ptot, Вт = 83; Тип монт. = smd; Ciss, пФ @ Uds, В = 1975 @ 50; Qg, нКл = 60 @ 10 В; Rds = 8,7 мОм @ 20 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,8 В @ 250 мкА; SOICN-8
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IRFPG50PBF Vishay Siliconix 91254.pdf N-канальний ПТ; Udss, В = 1 000; Id = 6,1 А; Ciss, пФ @ Uds, В = 2800 @ 25; Qg, нКл = 190 @ 10 В; Rds = 2 Ом @ 3,6 A, 10 В; Ugs(th) = 10 В; Р, Вт = 190; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247-3
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IRFL9110TRPBF-BE3 Vishay Siliconix sihfl911.pdf P-канальний ПТ; Udss, В = 100; Id = 1,1 А; Ciss, пФ @ Uds, В = 200 @ 25; Qg, нКл = 8,7 @ 10 В; Rds = 1,2 Ом @ 660 мA, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 2; 3,1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-223
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SI3457CDV-T1-GE3 Vishay Siliconix si3457cdv.pdf P-канальний ПТ; Udss, В = 30; Id = 5,1 А; Ciss, пФ @ Uds, В = 450 @ 15; Qg, нКл = 15 @ 10 В; Rds = 74 мОм @ 4,1 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Тексп, °C = -55...+150; Тип монт. = smd; TSOP-6
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SI7155DP-T1-GE3 Vishay Siliconix si7155dp.pdf P-канальний ПТ; Udss, В = 40; Id = 100 А; Ciss, пФ @ Uds, В = 12900 @ -20; Qg, нКл = 220; Rds = 4,6 мОм; Р, Вт = 104; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK-SO-8
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SiA469DJ-T1-GE3 Vishay Siliconix sia469dj.pdf P-канальний ПТ; Udss, В = 30; Id = 12; Ciss, пФ @ Uds, В = 1020 @ 15; Qg, нКл = 15; Rds = 26,5 мОм; Ugs(th) = 3 В; Р, Вт = 15,6; Тексп, °C = -55...+150; Тип монт. = smd; SC70-6L
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SIA471DJ-T1-GE3 Vishay Siliconix sia471dj.pdf P-канальний ПТ; Udss, В = 30; Id = 250 мкА; Ciss, пФ @ Uds, В = 1170 @ 15; Qg, нКл = 27.8; Rds = 14 мОм; Ugs(th) = 10 В; Р, Вт = 19.2; Тексп, °C = -55...+150; SC70-6L
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SIR165DP-T1-GE3 Vishay Siliconix sir165dp.pdf P-канальний ПТ; Udss, В = 30; Id = 60 А; Ciss, пФ @ Uds, В = 4930 @ 15; Qg, нКл = 138 @ 10 В; Rds = 4,6 мОм; Ugs(th) = 2,3 В; Р, Вт = 69,4; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK® SO-8
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SiRS4401DP-T1-GE3 Vishay Siliconix sirs4401dp.pdf P-канальний ПТ; Udss, В = 40; Id = 198; Ciss, пФ @ Uds, В = 21850 @ 20; Qg, нКл = 588 @ 10 В; Rds = 2,2 мОм; Ugs(th) = 2,3; Р, Вт = 132; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK® SO-8
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SQ2309ES-T1_BE3 Vishay Siliconix P-канальний ПТ; Udss, В = 60; Id = 1,7 А; Ciss, пФ @ Uds, В = 265 @ 25; Qg, нКл = 8,5 @ 10 В; Rds = 335 мОм @ 1,25 A, 10 В; Ugs(th) = 2,5 В @ 250 мкА; Р, Вт = 2; Тексп, °C = -55...+175; Тип монт. = smd; SOT-23-3
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SUM110P04-05-E3 Vishay Siliconix 73493.pdf P-канальний ПТ; Udss, В = 40; Id = 110; Ciss, пФ @ Uds, В = 11300 @ 25; Qg, нКл = 280; Rds = 5 мОм; Ugs(th) = 4 В; Р, Вт = 375; Тексп, °C = -55...+175; Тип монт. = smd; D2PAK
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SUM110P06-07L Vishay Siliconix P-канальний ПТ; Udss, В = 60; Id = 110 А; Ciss, пФ @ Uds, В = 11400 @ 25; Qg, нКл = 345 @ 10 В; Rds = 6,9 мОм @ 30 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Тексп, °C = -55...+175; D2PAK
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SUM70101EL-GE3 Vishay Siliconix sum70101el.pdf P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263
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IRF9530PBF Vishay Siliconix 91076.pdf P-канальний ПТ; Udss, В = 100; Id = 12 А; Ptot, Вт = 88; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 860 @ 25; Qg, нКл = 38 @ 10 В; Rds = 300 мОм @ 7,2 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; TO-220AB
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SiP11203DLP-T1-E3 Vishay Siliconix description Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
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SiP11204DLP-T1-E3 Vishay Siliconix sip11203.pdf Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
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Si9122ADLP-T1-E3 Vishay Siliconix si9122a.pdf
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SI9122ADQ-T1-E3 Vishay Siliconix si9122a.pdf
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SiHF530S-E3 Vishay Siliconix IRF530SPBF HEXFET Power MOSFET, 100V, 14A, 0,16 Ohm, D2PAK=TO-263
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IRF540PBF Vishay Siliconix irf540.pdf N-MOSFET, 100V, 28A, 150W, TO220AB
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IRF620PBF Vishay Siliconix irf620.pdf N-кан. MOSFET 200V, 6A, 0.6Ом, 70Вт, TO-220 (PowerMesh II)
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SiHF9540S-E3 Vishay Siliconix IRF9540SPBF D2PAK=TO-263
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SiHFBC30A-E3 Vishay Siliconix IRFBC30APBF TO-220AB
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IRFBC40PBF Vishay Siliconix 91115.pdf MOSFET N-CH 600V 6.2A TO-220AB
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SIHFD9014-E3 Vishay Siliconix IRFD9014PBF P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
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SQS120ELNW-T1_GE3 sqs120elnw.pdf
SQS120ELNW-T1_GE3
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SLW
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 10A, 10V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4590 pF @ 25 V
Qualification: AEC-Q101
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Anzahl Preis
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12+1.52 EUR
100+1.10 EUR
500+0.86 EUR
1000+0.79 EUR
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SQS124ELNW-T1_GE3 sqs124elnw.pdf
SQS124ELNW-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 100A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 107A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SLW
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2945 pF @ 25 V
Qualification: AEC-Q101
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IRF530 irf530.pdf
IRF530
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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IRF710 description 91041.pdf
IRF710
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
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IRFP460 91237.pdf
IRFP460
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IRF9530 description IRF9530.pdf
IRF9530
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.2A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IRF520 irl620.pdf
IRF520
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 9.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 5.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
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SIHF9630S-GE3 sihf9630.pdf
SIHF9630S-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.30 EUR
100+1.58 EUR
500+1.26 EUR
Mindestbestellmenge: 6
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SISS26LDN-T1-UE3 siss26ldn.pdf
SISS26LDN-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Produkt ist nicht verfügbar
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SISS26LDN-T1-UE3 siss26ldn.pdf
SISS26LDN-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) 150C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.60 EUR
11+1.65 EUR
100+1.10 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
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IRF9510 description 91072.pdf
IRF9510
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.4A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Produkt ist nicht verfügbar
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DG413DY DG411-413.pdf
DG413DY
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
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2N6661 2N6661%282%29%2C2N6661JANTX%28V%29.pdf
2N6661
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 90V 860MA TO39
Packaging: Tube
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 860mA (Tc)
Rds On (Max) @ Id, Vgs: 4Ohm @ 1A, 10V
Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 90 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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IRF830 description irl620.pdf
IRF830
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V
Produkt ist nicht verfügbar
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SIR570DP-T1-BE3 sir570dp.pdf
SIR570DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
Produkt ist nicht verfügbar
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SIR570DP-T1-BE3 sir570dp.pdf
SIR570DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) 175 C MOSF
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V
Produkt ist nicht verfügbar
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2N5116 2N5114-5116.PDF 124387-lds-0006
Hersteller: Vishay Siliconix
Description: JFET P-CH TO206AA
Packaging: Tube
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Supplier Device Package: TO-206AA (TO-18)
Produkt ist nicht verfügbar
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IRFD110 description sihfd110.pdf
IRFD110
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
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IRF540 irf540.pdf
IRF540
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF730 91047.pdf
IRF730
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 5.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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IRF9630 IRF9630%2CSiHF9630.pdf
IRF9630
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9220TRRPBF sihfr922.pdf
IRFR9220TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
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IRFR9220TRRPBF sihfr922.pdf
IRFR9220TRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Produkt ist nicht verfügbar
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DG409DY DG408_DG409.pdf
DG409DY
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 14pF, 25pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 2
Produkt ist nicht verfügbar
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IRLZ44STRRPBF sihlz44s.pdf
IRLZ44STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
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IRLZ44STRRPBF sihlz44s.pdf
IRLZ44STRRPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 50A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 5V
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
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DG301AAA DG300A_MIL301A_MIL302A_MIL.pdf
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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DG201BDY-T1-E3 dg201b.pdf
Hersteller: Vishay Siliconix
Аналоговий комутатор; К-сть вх/вих = 4 1:1 SPST - NC; rDS(on), Ом = 85; Uживл, В = 4,5...25; ) ±4,5...22; Тексп, °C = -40...+85; ton = 300 нс; toff = 200 нс; SOICN-16
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+2.61 EUR
10+2.25 EUR
100+1.98 EUR
Mindestbestellmenge: 3
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DG4051EEQ-T1-GE3 dg4051e.pdf
Hersteller: Vishay Siliconix
Аналоговий комутатор; К-сть вх/вих = 1; rDS(on), Ом = 78; Uживл, В = 3...16; Тексп, °C = -40...+125; ton = 75 нс; toff = 88 нс; Співвідн. = 8:1; F(3 дБ) = 308 МГц; TSSOP-16
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+4.76 EUR
10+4.10 EUR
100+3.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DG419DY-E3 dg417.pdf
Hersteller: Vishay Siliconix
Аналоговий комутатор; Io = 1 нА; rDS(on), Ом = 40; Uживл, В = 12, ±15; Кіл. вх/вих = 1 x SPDT - NC/NO; Тексп, °С = -40...+85; ton = 175 нс; toff = 145 нс; SOICN-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+6.15 EUR
10+5.09 EUR
100+4.48 EUR
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DG441DJ DG441-DG442.pdf
Hersteller: Vishay Siliconix
Аналоговий комутатор; Io = 15 мкА; rDS(on), Ом = 85; Uживл, В = 12; ±15; Кіл. вх/вих = 4 x SPST - NC; Тексп, °С = -40...+85; ton = 250 нс; toff = 120 нс; DIP-16
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+1.72 EUR
10+1.48 EUR
100+1.30 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DG9424DQ-T1-E3 dg9424.pdf
Hersteller: Vishay Siliconix
Id, мА = 100; Umax (сток-исток), В = 16; Uживл, В = 3-16; К-сть. драйв./прийм, шт = 4; Тексп, °С = -40-85; TSSOP-16
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+8.97 EUR
10+7.73 EUR
100+6.80 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI9112DY-T1-E3 si9112.pdf
Hersteller: Vishay Siliconix
ШІМ-регулятор; Fosc = 3 МГц; Iвих = 10 мА; Uживл, В = 9,5...13,5; К-сть. вих. = 1; К-т заповн, % = 50; Тексп, °С = -40...+85; Push-Pull СН прямого/зворотного ходу; SOICN-14
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+6.91 EUR
10+5.42 EUR
100+4.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI7272DP-T1-GE3 si7272dp.pdf
Hersteller: Vishay Siliconix
2N-канальний ПТ; Udss, В = 30; Id = 25; Ciss, пФ @ Uds, В = 1100 @ 15; Qg, нКл = 26; Rds = 9,3 мОм; Ugs(th) = 2,5 В; Р, Вт = 22; Тексп, °C = -55...+150; Тип монт. = smd; POWERPACK SOIC-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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SI9945BDY-T1-GE3 si9945bdy.pdf
Hersteller: Vishay Siliconix
2N-канальний ПТ; Udss, В = 60; Id = 5,3 A; Ciss, пФ @ Uds, В = 665 @ 15; Qg, нКл = 20 @ 10 В; Rds = 58 мОм @ 4,3 А, 10 В; Ugs(th) = 3 В @ 250 мкА; Р, Вт = 3,1 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOICN-8
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+2.74 EUR
10+2.36 EUR
100+2.07 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIR882ADP-T1-GE3 sir882adp.pdf
Hersteller: Vishay Siliconix
N-канальний ПТ; Udss, В = 100; Id = 60 А; Ptot, Вт = 83; Тип монт. = smd; Ciss, пФ @ Uds, В = 1975 @ 50; Qg, нКл = 60 @ 10 В; Rds = 8,7 мОм @ 20 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,8 В @ 250 мкА; SOICN-8
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+3.75 EUR
10+3.23 EUR
100+2.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IRFPG50PBF 91254.pdf
Hersteller: Vishay Siliconix
N-канальний ПТ; Udss, В = 1 000; Id = 6,1 А; Ciss, пФ @ Uds, В = 2800 @ 25; Qg, нКл = 190 @ 10 В; Rds = 2 Ом @ 3,6 A, 10 В; Ugs(th) = 10 В; Р, Вт = 190; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-247-3
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+8.52 EUR
10+7.34 EUR
100+6.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRFL9110TRPBF-BE3 sihfl911.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 100; Id = 1,1 А; Ciss, пФ @ Uds, В = 200 @ 25; Qg, нКл = 8,7 @ 10 В; Rds = 1,2 Ом @ 660 мA, 10 В; Ugs(th) = 4 В @ 250 мкА; Р, Вт = 2; 3,1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-223
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+2.78 EUR
10+2.39 EUR
100+2.10 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI3457CDV-T1-GE3 si3457cdv.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 30; Id = 5,1 А; Ciss, пФ @ Uds, В = 450 @ 15; Qg, нКл = 15 @ 10 В; Rds = 74 мОм @ 4,1 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Тексп, °C = -55...+150; Тип монт. = smd; TSOP-6
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+2.02 EUR
10+1.74 EUR
100+1.53 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI7155DP-T1-GE3 si7155dp.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 40; Id = 100 А; Ciss, пФ @ Uds, В = 12900 @ -20; Qg, нКл = 220; Rds = 4,6 мОм; Р, Вт = 104; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK-SO-8
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+6.15 EUR
10+3.92 EUR
100+3.45 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SiA469DJ-T1-GE3 sia469dj.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 30; Id = 12; Ciss, пФ @ Uds, В = 1020 @ 15; Qg, нКл = 15; Rds = 26,5 мОм; Ugs(th) = 3 В; Р, Вт = 15,6; Тексп, °C = -55...+150; Тип монт. = smd; SC70-6L
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+3.07 EUR
10+1.08 EUR
100+0.95 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIA471DJ-T1-GE3 sia471dj.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 30; Id = 250 мкА; Ciss, пФ @ Uds, В = 1170 @ 15; Qg, нКл = 27.8; Rds = 14 мОм; Ugs(th) = 10 В; Р, Вт = 19.2; Тексп, °C = -55...+150; SC70-6L
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+2.26 EUR
10+1.95 EUR
100+1.71 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIR165DP-T1-GE3 sir165dp.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 30; Id = 60 А; Ciss, пФ @ Uds, В = 4930 @ 15; Qg, нКл = 138 @ 10 В; Rds = 4,6 мОм; Ugs(th) = 2,3 В; Р, Вт = 69,4; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK® SO-8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+4.62 EUR
10+3.98 EUR
100+3.50 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SiRS4401DP-T1-GE3 sirs4401dp.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 40; Id = 198; Ciss, пФ @ Uds, В = 21850 @ 20; Qg, нКл = 588 @ 10 В; Rds = 2,2 мОм; Ugs(th) = 2,3; Р, Вт = 132; Тексп, °C = -55...+150; Тип монт. = smd; PowerPAK® SO-8
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+8.00 EUR
10+6.89 EUR
100+6.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SQ2309ES-T1_BE3
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 60; Id = 1,7 А; Ciss, пФ @ Uds, В = 265 @ 25; Qg, нКл = 8,5 @ 10 В; Rds = 335 мОм @ 1,25 A, 10 В; Ugs(th) = 2,5 В @ 250 мкА; Р, Вт = 2; Тексп, °C = -55...+175; Тип монт. = smd; SOT-23-3
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+1.84 EUR
10+1.59 EUR
100+1.40 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SUM110P04-05-E3 73493.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 40; Id = 110; Ciss, пФ @ Uds, В = 11300 @ 25; Qg, нКл = 280; Rds = 5 мОм; Ugs(th) = 4 В; Р, Вт = 375; Тексп, °C = -55...+175; Тип монт. = smd; D2PAK
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+10.15 EUR
10+8.75 EUR
100+7.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SUM110P06-07L
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 60; Id = 110 А; Ciss, пФ @ Uds, В = 11400 @ 25; Qg, нКл = 345 @ 10 В; Rds = 6,9 мОм @ 30 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Тексп, °C = -55...+175; D2PAK
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+14.19 EUR
10+12.22 EUR
100+10.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SUM70101EL-GE3 sum70101el.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+15.16 EUR
10+13.06 EUR
100+11.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530PBF 91076.pdf
Hersteller: Vishay Siliconix
P-канальний ПТ; Udss, В = 100; Id = 12 А; Ptot, Вт = 88; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 860 @ 25; Qg, нКл = 38 @ 10 В; Rds = 300 мОм @ 7,2 A, 10 В; Tексп, °C = -55...+175; Ugs(th) = 4 В @ 250 мкА; TO-220AB
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2+4.75 EUR
10+4.09 EUR
100+3.60 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SiP11203DLP-T1-E3 description
Hersteller: Vishay Siliconix
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
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SiP11204DLP-T1-E3 sip11203.pdf
Hersteller: Vishay Siliconix
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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Si9122ADLP-T1-E3 si9122a.pdf
Hersteller: Vishay Siliconix
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
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SI9122ADQ-T1-E3 si9122a.pdf
Hersteller: Vishay Siliconix
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
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SiHF530S-E3
Hersteller: Vishay Siliconix
IRF530SPBF HEXFET Power MOSFET, 100V, 14A, 0,16 Ohm, D2PAK=TO-263
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
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IRF540PBF irf540.pdf
Hersteller: Vishay Siliconix
N-MOSFET, 100V, 28A, 150W, TO220AB
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
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IRF620PBF irf620.pdf
Hersteller: Vishay Siliconix
N-кан. MOSFET 200V, 6A, 0.6Ом, 70Вт, TO-220 (PowerMesh II)
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
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SiHF9540S-E3
Hersteller: Vishay Siliconix
IRF9540SPBF D2PAK=TO-263
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
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SiHFBC30A-E3
Hersteller: Vishay Siliconix
IRFBC30APBF TO-220AB
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
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IRFBC40PBF 91115.pdf
Hersteller: Vishay Siliconix
MOSFET N-CH 600V 6.2A TO-220AB
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
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SIHFD9014-E3
Hersteller: Vishay Siliconix
IRFD9014PBF P-Channel 60V 1.1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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