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SIHG050N65SF-GE3 SIHG050N65SF-GE3 Vishay Siliconix sihg050n65sf.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
auf Bestellung 490 Stücke:
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SIHL050N65SF-GE3 SIHL050N65SF-GE3 Vishay Siliconix sihl050n65sf.pdf Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
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SIHH150N60E-T1-FE3 SIHH150N60E-T1-FE3 Vishay Siliconix sihh150n60e-fe3.pdf Description: E SERIES POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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SIHH150N60E-T1-FE3 SIHH150N60E-T1-FE3 Vishay Siliconix sihh150n60e-fe3.pdf Description: E SERIES POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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SIHL023N60E-GE3 SIHL023N60E-GE3 Vishay Siliconix sihl023n60e.pdf Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V
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SI3493DDV-T1-BE3 SI3493DDV-T1-BE3 Vishay Siliconix si3493ddv.pdf Description: P-CHANNEL 20 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
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SI3493DDV-T1-BE3 SI3493DDV-T1-BE3 Vishay Siliconix si3493ddv.pdf Description: P-CHANNEL 20 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
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SIHH075N65E-T1-GE3 SIHH075N65E-T1-GE3 Vishay Siliconix sihh075n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2832 pF @ 100 V
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SIHK075N65E-T1-GE3 Vishay Siliconix sihk075n65e.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2832 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH186N60EF-T1FE3 SIHH186N60EF-T1FE3 Vishay Siliconix sihh186n60ef-fe3.pdf Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
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SIHH186N60EF-T1FE3 SIHH186N60EF-T1FE3 Vishay Siliconix sihh186n60ef-fe3.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
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SQJ457EP-T2_BE3 SQJ457EP-T2_BE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
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SQJ457EP-T2_BE3 SQJ457EP-T2_BE3 Vishay Siliconix sqj457ep.pdf Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2976 Stücke:
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SQ3419CEV-T1_GE3 SQ3419CEV-T1_GE3 Vishay Siliconix sq3419cev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
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6000+0.33 EUR
9000+0.32 EUR
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SQ3419CEV-T1_GE3 SQ3419CEV-T1_GE3 Vishay Siliconix sq3419cev.pdf Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
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SIHP065N65E-GE3 SIHP065N65E-GE3 Vishay Siliconix sihp065n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100 V
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SISD4604DN-T1-UE3 Vishay Siliconix sisd4604dn.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
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SISD4604DN-T1-UE3 Vishay Siliconix sisd4604dn.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-BE3 SIR626LDP-T1-BE3 Vishay Siliconix sir626ldp.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-BE3 SIR626LDP-T1-BE3 Vishay Siliconix sir626ldp.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-UE3 SIR626LDP-T1-UE3 Vishay Siliconix sir626ldp.pdf Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SQJ185ELP-T1_GE3 SQJ185ELP-T1_GE3 Vishay Siliconix sqj185elp.pdf Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
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3000+1.12 EUR
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SQJ185ELP-T1_GE3 SQJ185ELP-T1_GE3 Vishay Siliconix sqj185elp.pdf Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4873 Stücke:
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6+4 EUR
10+2.56 EUR
100+1.73 EUR
500+1.37 EUR
1000+1.26 EUR
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SISS61DN-T1-GE3 SISS61DN-T1-GE3 Vishay Siliconix siss61dn.pdf Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
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3000+0.87 EUR
6000+0.81 EUR
9000+0.79 EUR
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SISS61DN-T1-GE3 SISS61DN-T1-GE3 Vishay Siliconix siss61dn.pdf Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
auf Bestellung 13472 Stücke:
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7+3.25 EUR
11+2.05 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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SIR5211DP-T1-GE3 SIR5211DP-T1-GE3 Vishay Siliconix sir5211dp.pdf Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
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SIR5211DP-T1-GE3 SIR5211DP-T1-GE3 Vishay Siliconix sir5211dp.pdf Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5590 Stücke:
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8+2.93 EUR
12+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
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SIR5408DP-T1-UE3 SIR5408DP-T1-UE3 Vishay Siliconix sir5408dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
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SIR5408DP-T1-UE3 SIR5408DP-T1-UE3 Vishay Siliconix sir5408dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
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SIR5406DP-T1-UE3 SIR5406DP-T1-UE3 Vishay Siliconix sir5406dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
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SIR5406DP-T1-UE3 SIR5406DP-T1-UE3 Vishay Siliconix sir5406dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
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SIR5402DP-T1-UE3 SIR5402DP-T1-UE3 Vishay Siliconix sir5402dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
auf Bestellung 6000 Stücke:
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3000+1.25 EUR
6000+1.17 EUR
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SIR5402DP-T1-UE3 SIR5402DP-T1-UE3 Vishay Siliconix sir5402dp.pdf Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
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IRF9540 IRF9540 Vishay Siliconix 91078.pdf description Description: MOSFET P-CH 100V 19A TO220AB
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SQJ141ELP-T1_GE3 SQJ141ELP-T1_GE3 Vishay Siliconix sqj141elp.pdf Description: P-CHANNEL 40-V (D-S) 175C MOSF
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SQJ141ELP-T1_GE3 SQJ141ELP-T1_GE3 Vishay Siliconix sqj141elp.pdf Description: P-CHANNEL 40-V (D-S) 175C MOSF
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SIHG026N65E-GE3 SIHG026N65E-GE3 Vishay Siliconix sihg026n65e.pdf Description: N-CHANNEL 650V
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SIZF456LDT-T1-UE3 SIZF456LDT-T1-UE3 Vishay Siliconix sizf456ldt.pdf Description: DUAL N-CHANNEL 70-V (D-S) MOSF
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SIHG080N65SF-GE3 SIHG080N65SF-GE3 Vishay Siliconix sihg080n65sf.pdf Description: N-CHANNEL 650V
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SIHL080N65SF-GE3 SIHL080N65SF-GE3 Vishay Siliconix sihl080n65sf.pdf Description: N-CHANNEL 600V
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DG409DJ DG409DJ Vishay Siliconix DG408_DG409.pdf description Description: IC SWITCH SP4T X 2 100OHM 16DIP
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IRF740 IRF740 Vishay Siliconix 91054.pdf Description: MOSFET N-CH 400V 10A TO220AB
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SIR580DP-T1-BE3 SIR580DP-T1-BE3 Vishay Siliconix sir580dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
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SIR5812DP-T1-RE3 SIR5812DP-T1-RE3 Vishay Siliconix doc?62298 Description: MOSFET N-CH 80V 30A PPAK SO-8
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SIR5810DP-T1-RE3 SIR5810DP-T1-RE3 Vishay Siliconix sir5810dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
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SIR5208DP-T1-RE3 SIR5208DP-T1-RE3 Vishay Siliconix sir5208dp.pdf Description: N-CHANNEL 20 V (D-S) MOSFET 150C
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SIR5208DP-T1-RE3 SIR5208DP-T1-RE3 Vishay Siliconix sir5208dp.pdf Description: N-CHANNEL 20 V (D-S) MOSFET 150C
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SIR576DP-T1-BE3 SIR576DP-T1-BE3 Vishay Siliconix sir576dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET 150
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SIR576DP-T1-BE3 SIR576DP-T1-BE3 Vishay Siliconix sir576dp.pdf Description: N-CHANNEL 150 V (D-S) MOSFET 150
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SIR516DP-T1-BE3 SIR516DP-T1-BE3 Vishay Siliconix sir516dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET 150
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SIR5802DP-T1-BE3 SIR5802DP-T1-BE3 Vishay Siliconix sir5802dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET 150C
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SIHG050N65SF-GE3 sihg050n65sf.pdf
SIHG050N65SF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
auf Bestellung 490 Stücke:
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AnzahlPrivatkunde
2+12.86 EUR
10+8.65 EUR
100+6.27 EUR
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SIHL050N65SF-GE3 sihl050n65sf.pdf
SIHL050N65SF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6369 pF @ 100 V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.03 EUR
10+8.78 EUR
480+5.36 EUR
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SIHH150N60E-T1-FE3 sihh150n60e-fe3.pdf
SIHH150N60E-T1-FE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+3.17 EUR
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SIHH150N60E-T1-FE3 sihh150n60e-fe3.pdf
SIHH150N60E-T1-FE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.4 EUR
10+6.22 EUR
100+4.43 EUR
500+3.88 EUR
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SIHL023N60E-GE3 sihl023n60e.pdf
SIHL023N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 38A, 10V
Power Dissipation (Max): 521W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AD-4L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10291 pF @ 100 V
auf Bestellung 480 Stücke:
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AnzahlPrivatkunde
1+27.64 EUR
10+19.4 EUR
480+13.2 EUR
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SI3493DDV-T1-BE3 si3493ddv.pdf
SI3493DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
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SI3493DDV-T1-BE3 si3493ddv.pdf
SI3493DDV-T1-BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 3.6W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 10 V
Produkt ist nicht verfügbar
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SIHH075N65E-T1-GE3 sihh075n65e.pdf
SIHH075N65E-T1-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2832 pF @ 100 V
Produkt ist nicht verfügbar
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SIHK075N65E-T1-GE3 sihk075n65e.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2832 pF @ 100 V
Produkt ist nicht verfügbar
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SIHH186N60EF-T1FE3 sihh186n60ef-fe3.pdf
SIHH186N60EF-T1FE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.87 EUR
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SIHH186N60EF-T1FE3 sihh186n60ef-fe3.pdf
SIHH186N60EF-T1FE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.73 EUR
10+5.76 EUR
100+4.08 EUR
500+3.51 EUR
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SQJ457EP-T2_BE3 sqj457ep.pdf
SQJ457EP-T2_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SQJ457EP-T2_BE3 sqj457ep.pdf
SQJ457EP-T2_BE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2976 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.95 EUR
12+1.87 EUR
100+1.25 EUR
500+0.98 EUR
1000+0.89 EUR
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SQ3419CEV-T1_GE3 sq3419cev.pdf
SQ3419CEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.37 EUR
6000+0.33 EUR
9000+0.32 EUR
15000+0.31 EUR
21000+0.3 EUR
30000+0.29 EUR
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SQ3419CEV-T1_GE3 sq3419cev.pdf
SQ3419CEV-T1_GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 36347 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.57 EUR
22+0.96 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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SIHP065N65E-GE3 sihp065n65e.pdf
SIHP065N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 100 V
Produkt ist nicht verfügbar
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SISD4604DN-T1-UE3 sisd4604dn.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Produkt ist nicht verfügbar
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SISD4604DN-T1-UE3 sisd4604dn.pdf
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-BE3 sir626ldp.pdf
SIR626LDP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-BE3 sir626ldp.pdf
SIR626LDP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SIR626LDP-T1-UE3 sir626ldp.pdf
SIR626LDP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
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SQJ185ELP-T1_GE3 sqj185elp.pdf
SQJ185ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.12 EUR
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SQJ185ELP-T1_GE3 sqj185elp.pdf
SQJ185ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4873 Stücke:
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AnzahlPrivatkunde
6+4 EUR
10+2.56 EUR
100+1.73 EUR
500+1.37 EUR
1000+1.26 EUR
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SISS61DN-T1-GE3 siss61dn.pdf
SISS61DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
3000+0.87 EUR
6000+0.81 EUR
9000+0.79 EUR
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SISS61DN-T1-GE3 siss61dn.pdf
SISS61DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
auf Bestellung 13472 Stücke:
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AnzahlPrivatkunde
7+3.25 EUR
11+2.05 EUR
100+1.37 EUR
500+1.08 EUR
1000+0.99 EUR
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SIR5211DP-T1-GE3 sir5211dp.pdf
SIR5211DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.77 EUR
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SIR5211DP-T1-GE3 sir5211dp.pdf
SIR5211DP-T1-GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
12+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
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SIR5408DP-T1-UE3 sir5408dp.pdf
SIR5408DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.79 EUR
6000+0.73 EUR
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SIR5408DP-T1-UE3 sir5408dp.pdf
SIR5408DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.98 EUR
12+1.88 EUR
100+1.25 EUR
500+0.99 EUR
1000+0.89 EUR
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SIR5406DP-T1-UE3 sir5406dp.pdf
SIR5406DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.83 EUR
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SIR5406DP-T1-UE3 sir5406dp.pdf
SIR5406DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.98 EUR
100+1.32 EUR
500+1.04 EUR
1000+0.94 EUR
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SIR5402DP-T1-UE3 sir5402dp.pdf
SIR5402DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.25 EUR
6000+1.17 EUR
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SIR5402DP-T1-UE3 sir5402dp.pdf
SIR5402DP-T1-UE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.38 EUR
10+2.82 EUR
100+1.92 EUR
500+1.52 EUR
1000+1.4 EUR
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IRF9540 description 91078.pdf
IRF9540
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Produkt ist nicht verfügbar
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SQJ141ELP-T1_GE3 sqj141elp.pdf
SQJ141ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSF
Produkt ist nicht verfügbar
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SQJ141ELP-T1_GE3 sqj141elp.pdf
SQJ141ELP-T1_GE3
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSF
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5+4.41 EUR
10+2.82 EUR
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SIHG026N65E-GE3 sihg026n65e.pdf
SIHG026N65E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
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1+28.42 EUR
25+17.74 EUR
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SIZF456LDT-T1-UE3 sizf456ldt.pdf
SIZF456LDT-T1-UE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
Produkt ist nicht verfügbar
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SIZF456LDT-T1-UE3 sizf456ldt.pdf
SIZF456LDT-T1-UE3
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
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SIZF660LDT-T1-GE3 sizf660ldt.pdf
Hersteller: Vishay Siliconix
Description: SYMMETRIC DUAL N-CH 60-V (D-S) M
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SIHG080N65SF-GE3 sihg080n65sf.pdf
SIHG080N65SF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
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2+11.58 EUR
10+7.76 EUR
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SIHL080N65SF-GE3 sihl080n65sf.pdf
SIHL080N65SF-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
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DG409DJ description DG408_DG409.pdf
DG409DJ
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 100OHM 16DIP
Produkt ist nicht verfügbar
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IRF740 91054.pdf
IRF740
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Produkt ist nicht verfügbar
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SIR580DP-T1-BE3 sir580dp.pdf
SIR580DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
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SIR580DP-T1-BE3 sir580dp.pdf
SIR580DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
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4+5.53 EUR
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SIR5812DP-T1-RE3 doc?62298
SIR5812DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
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3000+0.7 EUR
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SIR5812DP-T1-RE3 doc?62298
SIR5812DP-T1-RE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
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8+2.73 EUR
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SIR5810DP-T1-RE3 sir5810dp.pdf
SIR5810DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
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SIR5810DP-T1-RE3 sir5810dp.pdf
SIR5810DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
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8+2.93 EUR
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SIR5208DP-T1-RE3 sir5208dp.pdf
SIR5208DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
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SIR5208DP-T1-RE3 sir5208dp.pdf
SIR5208DP-T1-RE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
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7+3.14 EUR
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SIR576DP-T1-BE3 sir576dp.pdf
SIR576DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
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3000+1.13 EUR
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SIR576DP-T1-BE3 sir576dp.pdf
SIR576DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
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6+4.06 EUR
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SIR516DP-T1-BE3 sir516dp.pdf
SIR516DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
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Mindestbestellmenge: 3000 Stücke
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SIR516DP-T1-BE3 sir516dp.pdf
SIR516DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
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5+4.94 EUR
10+3.18 EUR
100+2.17 EUR
500+1.74 EUR
1000+1.61 EUR
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SIR582DP-T1-BE3 sir582dp.pdf
SIR582DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
auf Bestellung 6000 Stücke:
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3000+1.46 EUR
6000+1.37 EUR
Mindestbestellmenge: 3000 Stücke
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SIR582DP-T1-BE3 sir582dp.pdf
SIR582DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
10+3.24 EUR
100+2.21 EUR
500+1.77 EUR
1000+1.65 EUR
Mindestbestellmenge: 5 Stücke
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SIR5802DP-T1-BE3 sir5802dp.pdf
SIR5802DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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3000+1.57 EUR
6000+1.48 EUR
Mindestbestellmenge: 3000 Stücke
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SIR5802DP-T1-BE3 sir5802dp.pdf
SIR5802DP-T1-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.34 EUR
10+3.45 EUR
100+2.37 EUR
500+1.92 EUR
1000+1.8 EUR
Mindestbestellmenge: 4 Stücke
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