Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (11840) > Seite 186 nach 198
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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| SISD4604DN-T1-UE3 | Vishay Siliconix |
 Description: N-CHANNEL 60-V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-F Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| SISD4604DN-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Power Dissipation (Max): 5.4W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-F Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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SIR626LDP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR626LDP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR626LDP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SQJ185ELP-T1_GE3 | Vishay Siliconix |
Description: P-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJ185ELP-T1_GE3 | Vishay Siliconix |
Description: P-CHANNEL 80-V (D-S) 175C MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 14423 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS61DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 30.9/111.9A PPAK Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SISS61DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 30.9/111.9A PPAK Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerPAK® 1212-8S Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8S Packaging: Cut Tape (CT) |
auf Bestellung 13472 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5211DP-T1-GE3 | Vishay Siliconix |
Description: P-CHANNEL 20 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5211DP-T1-GE3 | Vishay Siliconix |
Description: P-CHANNEL 20 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 5W (Ta), 56.8W (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5590 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5408DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5408DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5406DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5406DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 5W (Ta), 71.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5402DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5402DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9540 | Vishay Siliconix |
 Description: MOSFET P-CH 100V 19A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SQJ141ELP-T1_GE3 | Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) 175C MOSF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SQJ141ELP-T1_GE3 | Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) 175C MOSF |
auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9530 | Vishay Siliconix |
Description: MOSFET P-CH 100V 12A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIHG026N65E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 650V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SIZF456LDT-T1-UE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 70-V (D-S) MOSF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIZF456LDT-T1-UE3 | Vishay Siliconix |
Description: DUAL N-CHANNEL 70-V (D-S) MOSF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| SIZF660LDT-T1-GE3 | Vishay Siliconix |
Description: SYMMETRIC DUAL N-CH 60-V (D-S) M |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||
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DG403DJ | Vishay Siliconix |
Description: IC SW SPST-NO/NCX2 45OHM 16DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIHG080N65SF-GE3 | Vishay Siliconix |
Description: N-CHANNEL 650V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHL080N65SF-GE3 | Vishay Siliconix |
Description: N-CHANNEL 600V |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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2N7002E | Vishay Siliconix |
Description: MOSFET N-CH 60V 240MA SOT23-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DG409DJ | Vishay Siliconix |
Description: IC SWITCH SP4T X 2 100OHM 16DIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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DG419DY | Vishay Siliconix |
Description: IC SWITCH SPDT X 1 35OHM 8SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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IRF740 | Vishay Siliconix |
Description: MOSFET N-CH 400V 10A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR580DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR580DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
auf Bestellung 4102 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5812DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK SO-8 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5812DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30A PPAK SO-8 |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5810DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR5810DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
auf Bestellung 5866 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5208DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 20 V (D-S) MOSFET 150C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR5208DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 20 V (D-S) MOSFET 150C |
auf Bestellung 4287 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR576DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR576DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
auf Bestellung 11972 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR516DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET 150 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR516DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET 150 |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR582DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR582DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5802DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR5802DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET 150C |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR572DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR572DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
auf Bestellung 5988 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR514DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET 150 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR514DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET 150 |
auf Bestellung 5984 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR578DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIR578DP-T1-BE3 | Vishay Siliconix |
Description: N-CHANNEL 150 V (D-S) MOSFET 150 |
auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF530 | Vishay Siliconix |
Description: MOSFET N-CH 100V 14A TO220AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SIHH180N60E-T1-FE3 | Vishay Siliconix |
Description: N-CHANNEL 600V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHH180N60E-T1-FE3 | Vishay Siliconix |
Description: N-CHANNEL 600V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSOP34356 | Vishay Siliconix |
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2,5...5,5, Тексп, °С = -25...+85, 3 виводи,... Датчики Корпус: 7x6x5.7mm Од. вим: шт Anzahl je Verpackung: 90 Stücke |
verfügbar 400 Stücke: |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| TSOP34356SS1F | Vishay Siliconix |
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2.5...5.5, Тексп, °С = -25...+85,... Датчики Корпус: 6x6.95x5.6mm Од. вим: шт Anzahl je Verpackung: 90 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
| MBR0540PBF | Vishay Siliconix |
Діод Шотткі smd, Io, A = 0,5, Uзвор, В = 40, Uf (max), В = 0,56, If, А = 1, Тексп, °С = -65...+150, I, мкА @ Ur, В = 20,... Діоди Корпус: SOD-123 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SISD4604DN-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SISD4604DN-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-F
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR626LDP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR626LDP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR626LDP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQJ185ELP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.09 EUR |
| 6000+ | 1.02 EUR |
| 9000+ | 0.98 EUR |
| SQJ185ELP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
Description: P-CHANNEL 80-V (D-S) 175C MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 10A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4914 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 14423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.92 EUR |
| 10+ | 2.5 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.23 EUR |
| SISS61DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.87 EUR |
| 6000+ | 0.81 EUR |
| 9000+ | 0.79 EUR |
| SISS61DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 30.9/111.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
auf Bestellung 13472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.25 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.99 EUR |
| SIR5211DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.77 EUR |
| SIR5211DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: P-CHANNEL 20 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 56.8W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Ta), 105A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| SIR5408DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.79 EUR |
| 6000+ | 0.73 EUR |
| SIR5408DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28.8A (Ta), 101A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 59.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2243 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.89 EUR |
| SIR5406DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.83 EUR |
| 6000+ | 0.77 EUR |
| SIR5406DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.3A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2675 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.12 EUR |
| 11+ | 1.98 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| SIR5402DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.25 EUR |
| 6000+ | 1.17 EUR |
| SIR5402DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
Description: N-CHANNEL 40-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49.9A (Ta), 201.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 20A, 10V
Power Dissipation (Max): 5.6W (Ta), 92.5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 20 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.38 EUR |
| 10+ | 2.82 EUR |
| 100+ | 1.92 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.4 EUR |
| IRF9540 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Description: MOSFET P-CH 100V 19A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQJ141ELP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSF
Description: P-CHANNEL 40-V (D-S) 175C MOSF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SQJ141ELP-T1_GE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSF
Description: P-CHANNEL 40-V (D-S) 175C MOSF
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.41 EUR |
| 10+ | 2.82 EUR |
| 100+ | 1.93 EUR |
| IRF9530 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 12A TO220AB
Description: MOSFET P-CH 100V 12A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG026N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Description: N-CHANNEL 650V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.42 EUR |
| 25+ | 17.74 EUR |
| 100+ | 15.2 EUR |
| 500+ | 13.67 EUR |
| SIZF456LDT-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIZF456LDT-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
Description: DUAL N-CHANNEL 70-V (D-S) MOSF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIZF660LDT-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: SYMMETRIC DUAL N-CH 60-V (D-S) M
Description: SYMMETRIC DUAL N-CH 60-V (D-S) M
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DG403DJ |
|
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 45OHM 16DIP
Description: IC SW SPST-NO/NCX2 45OHM 16DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHG080N65SF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Description: N-CHANNEL 650V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.33 EUR |
| 10+ | 7.58 EUR |
| 100+ | 5.46 EUR |
| SIHL080N65SF-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Description: N-CHANNEL 600V
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.91 EUR |
| 10+ | 8 EUR |
| 480+ | 4.84 EUR |
| 2N7002E |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 240MA SOT23-3
Description: MOSFET N-CH 60V 240MA SOT23-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DG409DJ |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 100OHM 16DIP
Description: IC SWITCH SP4T X 2 100OHM 16DIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DG419DY |
|
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 35OHM 8SOIC
Description: IC SWITCH SPDT X 1 35OHM 8SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF740 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Description: MOSFET N-CH 400V 10A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR580DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR580DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 4102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.57 EUR |
| 100+ | 2.45 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.88 EUR |
| SIR5812DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Description: MOSFET N-CH 80V 30A PPAK SO-8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.7 EUR |
| SIR5812DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Description: MOSFET N-CH 80V 30A PPAK SO-8
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.73 EUR |
| 13+ | 1.71 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.81 EUR |
| SIR5810DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR5810DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 5866 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.23 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| SIR5208DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR5208DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
Description: N-CHANNEL 20 V (D-S) MOSFET 150C
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 11+ | 1.99 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.95 EUR |
| SIR576DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.13 EUR |
| 6000+ | 1.06 EUR |
| SIR576DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
auf Bestellung 11972 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.06 EUR |
| 10+ | 2.59 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.39 EUR |
| 1000+ | 1.29 EUR |
| SIR516DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR516DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Description: N-CHANNEL 100 V (D-S) MOSFET 150
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 10+ | 3.18 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.61 EUR |
| SIR582DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Description: N-CHANNEL 80 V (D-S) MOSFET 150
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.46 EUR |
| 6000+ | 1.37 EUR |
| SIR582DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150
Description: N-CHANNEL 80 V (D-S) MOSFET 150
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.01 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.77 EUR |
| 1000+ | 1.65 EUR |
| SIR5802DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.57 EUR |
| 6000+ | 1.48 EUR |
| SIR5802DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
Description: N-CHANNEL 80 V (D-S) MOSFET 150C
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.34 EUR |
| 10+ | 3.45 EUR |
| 100+ | 2.37 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.8 EUR |
| SIR572DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR572DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.58 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.89 EUR |
| SIR514DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR514DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET 150
Description: N-CHANNEL 100 V (D-S) MOSFET 150
auf Bestellung 5984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.58 EUR |
| 100+ | 2.46 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.89 EUR |
| SIR578DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR578DP-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 150 V (D-S) MOSFET 150
Description: N-CHANNEL 150 V (D-S) MOSFET 150
auf Bestellung 5990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 4.3 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.43 EUR |
| 1000+ | 2.4 EUR |
| IRF530 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Description: MOSFET N-CH 100V 14A TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHH180N60E-T1-FE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Description: N-CHANNEL 600V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.53 EUR |
| SIHH180N60E-T1-FE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Description: N-CHANNEL 600V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 10+ | 5.22 EUR |
| 100+ | 3.68 EUR |
| 500+ | 3.09 EUR |
| TSOP34356 |
|
Hersteller: Vishay Siliconix
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2,5...5,5, Тексп, °С = -25...+85, 3 виводи,... Датчики Корпус: 7x6x5.7mm Од. вим: шт
Anzahl je Verpackung: 90 Stücke
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2,5...5,5, Тексп, °С = -25...+85, 3 виводи,... Датчики Корпус: 7x6x5.7mm Од. вим: шт
Anzahl je Verpackung: 90 Stücke
verfügbar 400 Stücke:
| TSOP34356SS1F |
|
Hersteller: Vishay Siliconix
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2.5...5.5, Тексп, °С = -25...+85,... Датчики Корпус: 6x6.95x5.6mm Од. вим: шт
Anzahl je Verpackung: 90 Stücke
Інфрачервоний фотоприймач, Ic, мА = 5, Uживл, В = 2.5...5.5, Тексп, °С = -25...+85,... Датчики Корпус: 6x6.95x5.6mm Од. вим: шт
Anzahl je Verpackung: 90 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBR0540PBF |
|
Hersteller: Vishay Siliconix
Діод Шотткі smd, Io, A = 0,5, Uзвор, В = 40, Uf (max), В = 0,56, If, А = 1, Тексп, °С = -65...+150, I, мкА @ Ur, В = 20,... Діоди Корпус: SOD-123 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Діод Шотткі smd, Io, A = 0,5, Uзвор, В = 40, Uf (max), В = 0,56, If, А = 1, Тексп, °С = -65...+150, I, мкА @ Ur, В = 20,... Діоди Корпус: SOD-123 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH