Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10947) > Seite 182 nach 183
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SQA604CEJW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK®SC-70W-6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 2785 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP12N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR164ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35.9A/40A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR164ADP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 35.9A/40A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V |
auf Bestellung 5824 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR166DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V |
Produkt ist nicht verfügbar |
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SIR166DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V |
auf Bestellung 2390 Stücke: Lieferzeit 10-14 Tag (e) |
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DG403BDJ-E3 | Vishay Siliconix |
Description: IC SW SPST-NO/NCX4 45OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 45Ohm Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 13V ~ 36V Voltage - Supply, Dual (V±): ±7V ~ 22V Charge Injection: 60pC Crosstalk: -94.8dB @ 1MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 150ns, 100ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 500pA Number of Circuits: 4 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF9630STRL-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
Produkt ist nicht verfügbar |
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SIHF9630STRL-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 200V 6.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V Power Dissipation (Max): 3W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V |
auf Bestellung 785 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS966ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6A PWRPAK1212 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8W Dual Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27.8W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQS966ENW-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 6A PWRPAK1212 Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Dual Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 27.8W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Dual Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8641 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF9540 | Vishay Siliconix |
Description: MOSFET P-CH 100V 19A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
Produkt ist nicht verfügbar |
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DG408DJ | Vishay Siliconix |
Description: IC MUX 8:1 100OHM 16DIP Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 5V ~ 36V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 20pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Switch Time (Ton, Toff) (Max): 150ns, 150ns Channel Capacitance (CS(off), CD(off)): 3pF, 26pF Current - Leakage (IS(off)) (Max): 500pA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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SIR610DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 35.4A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIR610DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 35.4A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc) Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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SiR618DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 14.2A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V |
Produkt ist nicht verfügbar |
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SiR618DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 14.2A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V |
Produkt ist nicht verfügbar |
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SIR624DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
Produkt ist nicht verfügbar |
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DG408DY | Vishay Siliconix |
Description: IC MUX 8:1 100OHM 16SOIC Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 36V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 20pC Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 15Ohm (Max) Switch Time (Ton, Toff) (Max): 150ns, 150ns Channel Capacitance (CS(off), CD(off)): 3pF, 26pF Current - Leakage (IS(off)) (Max): 500pA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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SIA110DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.4A/12A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIA110DJ-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.4A/12A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V Power Dissipation (Max): 3.5W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
auf Bestellung 5350 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR120 | Vishay Siliconix |
Description: MOSFET N-CH 100V 7.7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
Produkt ist nicht verfügbar |
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SI4490DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 2.85A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V |
Produkt ist nicht verfügbar |
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SISH114ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 18A/35A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SISH114ADN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 18A/35A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8SH Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V Power Dissipation (Max): 3.7W (Ta), 39W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8SH Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V |
auf Bestellung 5982 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ131EL-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQJQ131EL-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® 8 x 8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 280A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 8 x 8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 3368 Stücke: Lieferzeit 10-14 Tag (e) |
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DG301AAA | Vishay Siliconix |
Description: IC SWITCH SPDTX1 50OHM TO100-10 Packaging: Bulk Package / Case: TO-100-10 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 50Ohm Supplier Device Package: TO-100-10 Voltage - Supply, Dual (V±): ±15V Charge Injection: 8pC Crosstalk: -74dB @ 500kHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Switch Time (Ton, Toff) (Max): 300ns, 250ns Channel Capacitance (CS(off), CD(off)): 14pF, 14pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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IRFR9014PBF-BE3 | Vishay Siliconix |
Description: P-CHANNEL 60V Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR9120PBF-BE3 | Vishay Siliconix |
Description: P-CHANNEL 100V Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1553CDL-T1-BE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta), 340mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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SI1553CDL-T1-BE3 | Vishay Siliconix |
Description: MOSFET N/P-CH 20V 0.7A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 290mW (Ta), 340mW (Tc) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS112LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS112LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF18N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
Produkt ist nicht verfügbar |
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SiP11203DLP-T1-E3 | Vishay Siliconix | Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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SiP11204DLP-T1-E3 | Vishay Siliconix | Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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Si9122ADLP-T1-E3 | Vishay Siliconix |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9122ADQ-T1-E3 | Vishay Siliconix |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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SIC477ED-T1-GE3 | Vishay Siliconix |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHF530S-E3 | Vishay Siliconix | IRF530SPBF HEXFET Power MOSFET, 100V, 14A, 0,16 Ohm, D2PAK=TO-263 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540PBF | Vishay Siliconix | N-MOSFET, 100V, 28A, 150W, TO220AB |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF620PBF | Vishay Siliconix | N-кан. MOSFET 200V, 6A, 0.6Ом, 70Вт, TO-220 (PowerMesh II) |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHF9540S-E3 | Vishay Siliconix | IRF9540SPBF D2PAK=TO-263 |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFBC30A-E3 | Vishay Siliconix | IRFBC30APBF TO-220AB |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFBC40-E3 | Vishay Siliconix | IRFBC40PBF TO-220AB |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFD110PBF | Vishay Siliconix | (MFET,N-CH,100V,1A,DIP-4) |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFP360LC-E3 | Vishay Siliconix | IRFP360LCPBF TO-247AC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP360PBF : SiHFP360-E3 | Vishay Siliconix | IRFP360PBF TO-247AC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFR9214-E3 | Vishay Siliconix | IRFR9214PBF P-CH. 250V 2.7A DPAK=TO-252 |
auf Bestellung 1023 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFRC20-E3 | Vishay Siliconix | IRFRC20PBF DPAK=TO-252 |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFS11N50A | Vishay Siliconix | IRFS11N50A N-CH U=500V I=11A R=0,52Oм D2PAK=TO-263 |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
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SiHFZ34-E3 | Vishay Siliconix | IRFZ34PBF TO-220-3 |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL110PBF : IRLL110TRPBF | Vishay Siliconix | IRLL110PBF SOT-223 |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1304BDL-T1-E3 | Vishay Siliconix | SC-70 |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301BDS-T1-GE3 | Vishay Siliconix | Si2301BDS P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236) |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-E3 | Vishay Siliconix | MOSFET P-Ch, 20V, 3.7A, SOT-23-3 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2333DDS-T1-GE3 | Vishay Siliconix | P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236) |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SI5403DC-T1-GE3 | Vishay Siliconix | (1206-8,P-ch,Mosfet,30B,6A) |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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SIA907EDJT-T1-GE3 | Vishay Siliconix | MOSFET -20V 57mOhm@4.5V 4.5A P-Ch G-III |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
SQA604CEJW-T1_GE3 |
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
Qualification: AEC-Q101
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK®SC-70W-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.84 EUR |
25+ | 0.71 EUR |
100+ | 0.5 EUR |
500+ | 0.39 EUR |
1000+ | 0.31 EUR |
SIHP12N50C-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.41 EUR |
10+ | 6.22 EUR |
100+ | 5.03 EUR |
500+ | 4.47 EUR |
1000+ | 3.83 EUR |
SIR164ADP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.9A/40A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Description: MOSFET N-CH 30V 35.9A/40A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.69 EUR |
SIR164ADP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35.9A/40A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Description: MOSFET N-CH 30V 35.9A/40A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
auf Bestellung 5824 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.67 EUR |
13+ | 1.37 EUR |
100+ | 1.07 EUR |
500+ | 0.91 EUR |
1000+ | 0.74 EUR |
SIR166DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V
Produkt ist nicht verfügbar
SIR166DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 15 V
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.34 EUR |
10+ | 1.91 EUR |
100+ | 1.49 EUR |
500+ | 1.26 EUR |
1000+ | 1.03 EUR |
DG403BDJ-E3 |
Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 45OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
Description: IC SW SPST-NO/NCX4 45OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 45Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 36V
Voltage - Supply, Dual (V±): ±7V ~ 22V
Charge Injection: 60pC
Crosstalk: -94.8dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 150ns, 100ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 4
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.62 EUR |
10+ | 7.74 EUR |
25+ | 7.32 EUR |
100+ | 6.34 EUR |
250+ | 6.02 EUR |
500+ | 5.4 EUR |
SIHF9630STRL-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Produkt ist nicht verfügbar
SIHF9630STRL-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Description: MOSFET P-CH 200V 6.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.9A, 10V
Power Dissipation (Max): 3W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
auf Bestellung 785 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.09 EUR |
11+ | 1.72 EUR |
100+ | 1.34 EUR |
SQS966ENW-T1_GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.65 EUR |
6000+ | 0.61 EUR |
SQS966ENW-T1_GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 6A PWRPAK1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8W Dual
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 27.8W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W Dual
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8641 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 1.57 EUR |
14+ | 1.28 EUR |
100+ | 0.99 EUR |
500+ | 0.84 EUR |
1000+ | 0.69 EUR |
IRF9540 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET P-CH 100V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
DG408DJ |
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
Description: IC MUX 8:1 100OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
Produkt ist nicht verfügbar
SIR610DP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Produkt ist nicht verfügbar
SIR610DP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
Description: MOSFET N-CH 200V 35.4A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.4A (Tc)
Rds On (Max) @ Id, Vgs: 31.9mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 100 V
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.94 EUR |
10+ | 2.44 EUR |
100+ | 1.94 EUR |
500+ | 1.65 EUR |
1000+ | 1.4 EUR |
SiR618DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
Produkt ist nicht verfügbar
SiR618DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
Description: MOSFET N-CH 200V 14.2A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 8A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 7.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
Produkt ist nicht verfügbar
SIR624DP-T1-RE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
Produkt ist nicht verfügbar
DG408DY |
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
Description: IC MUX 8:1 100OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 36V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 20pC
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 15Ohm (Max)
Switch Time (Ton, Toff) (Max): 150ns, 150ns
Channel Capacitance (CS(off), CD(off)): 3pF, 26pF
Current - Leakage (IS(off)) (Max): 500pA
Number of Circuits: 1
Produkt ist nicht verfügbar
SIA110DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.6 EUR |
SIA110DJ-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 100V 5.4A/12A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 5350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 1.44 EUR |
15+ | 1.18 EUR |
100+ | 0.92 EUR |
500+ | 0.78 EUR |
1000+ | 0.64 EUR |
IRFR120 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Description: MOSFET N-CH 100V 7.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
Produkt ist nicht verfügbar
SI4490DY-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Description: MOSFET N-CH 200V 2.85A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Produkt ist nicht verfügbar
SISH114ADN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.46 EUR |
SISH114ADN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
Description: MOSFET N-CH 30V 18A/35A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8SH
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 18A, 10V
Power Dissipation (Max): 3.7W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8SH
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
auf Bestellung 5982 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.21 EUR |
17+ | 1.05 EUR |
100+ | 0.73 EUR |
500+ | 0.61 EUR |
1000+ | 0.52 EUR |
SQJQ131EL-T1_GE3 |
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 2.57 EUR |
SQJQ131EL-T1_GE3 |
Hersteller: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
Description: AUTOMOTIVE P-CHANNEL 30 V (D-S)
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 8 x 8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 10A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 731 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33050 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 3368 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.28 EUR |
10+ | 4.43 EUR |
100+ | 3.58 EUR |
500+ | 3.19 EUR |
1000+ | 2.73 EUR |
DG301AAA |
Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC SWITCH SPDTX1 50OHM TO100-10
Packaging: Bulk
Package / Case: TO-100-10 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 50Ohm
Supplier Device Package: TO-100-10
Voltage - Supply, Dual (V±): ±15V
Charge Injection: 8pC
Crosstalk: -74dB @ 500kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Switch Time (Ton, Toff) (Max): 300ns, 250ns
Channel Capacitance (CS(off), CD(off)): 14pF, 14pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
IRFR9014PBF-BE3 |
Hersteller: Vishay Siliconix
Description: P-CHANNEL 60V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
Description: P-CHANNEL 60V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 3.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.41 EUR |
75+ | 1.94 EUR |
150+ | 1.54 EUR |
525+ | 1.3 EUR |
1050+ | 1.06 EUR |
2025+ | 1 EUR |
IRFR9120PBF-BE3 |
Hersteller: Vishay Siliconix
Description: P-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Description: P-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.8 EUR |
75+ | 2.25 EUR |
150+ | 1.85 EUR |
525+ | 1.57 EUR |
1050+ | 1.33 EUR |
2025+ | 1.26 EUR |
SI1553CDL-T1-BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
SI1553CDL-T1-BE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET N/P-CH 20V 0.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 290mW (Ta), 340mW (Tc)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, 43pF @ 10V
Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, 850mOhm @ 400mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, 3nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.77 EUR |
29+ | 0.61 EUR |
100+ | 0.36 EUR |
500+ | 0.34 EUR |
1000+ | 0.23 EUR |
SIS112LDN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.41 EUR |
6000+ | 0.39 EUR |
SIS112LDN-T1-GE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.09 EUR |
19+ | 0.94 EUR |
100+ | 0.65 EUR |
500+ | 0.54 EUR |
1000+ | 0.46 EUR |
SIHF18N50C-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Produkt ist nicht verfügbar
SiP11203DLP-T1-E3 |
Hersteller: Vishay Siliconix
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)SiP11204DLP-T1-E3 |
Hersteller: Vishay Siliconix
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
Драйвер синхронного выпрямителя для DC-DC Converter, -40...+85C, MLP44-16, PBF
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)SiHF530S-E3 |
Hersteller: Vishay Siliconix
IRF530SPBF HEXFET Power MOSFET, 100V, 14A, 0,16 Ohm, D2PAK=TO-263
IRF530SPBF HEXFET Power MOSFET, 100V, 14A, 0,16 Ohm, D2PAK=TO-263
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)IRF540PBF |
Hersteller: Vishay Siliconix
N-MOSFET, 100V, 28A, 150W, TO220AB
N-MOSFET, 100V, 28A, 150W, TO220AB
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)IRF620PBF |
Hersteller: Vishay Siliconix
N-кан. MOSFET 200V, 6A, 0.6Ом, 70Вт, TO-220 (PowerMesh II)
N-кан. MOSFET 200V, 6A, 0.6Ом, 70Вт, TO-220 (PowerMesh II)
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)SiHF9540S-E3 |
Hersteller: Vishay Siliconix
IRF9540SPBF D2PAK=TO-263
IRF9540SPBF D2PAK=TO-263
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)SiHFBC30A-E3 |
Hersteller: Vishay Siliconix
IRFBC30APBF TO-220AB
IRFBC30APBF TO-220AB
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)SiHFBC40-E3 |
Hersteller: Vishay Siliconix
IRFBC40PBF TO-220AB
IRFBC40PBF TO-220AB
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)IRFD110PBF |
Hersteller: Vishay Siliconix
(MFET,N-CH,100V,1A,DIP-4)
(MFET,N-CH,100V,1A,DIP-4)
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)SiHFP360LC-E3 |
Hersteller: Vishay Siliconix
IRFP360LCPBF TO-247AC
IRFP360LCPBF TO-247AC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)IRFP360PBF : SiHFP360-E3 |
Hersteller: Vishay Siliconix
IRFP360PBF TO-247AC
IRFP360PBF TO-247AC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)SiHFR9214-E3 |
Hersteller: Vishay Siliconix
IRFR9214PBF P-CH. 250V 2.7A DPAK=TO-252
IRFR9214PBF P-CH. 250V 2.7A DPAK=TO-252
auf Bestellung 1023 Stücke:
Lieferzeit 14-21 Tag (e)SiHFRC20-E3 |
Hersteller: Vishay Siliconix
IRFRC20PBF DPAK=TO-252
IRFRC20PBF DPAK=TO-252
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)SiHFS11N50A |
Hersteller: Vishay Siliconix
IRFS11N50A N-CH U=500V I=11A R=0,52Oм D2PAK=TO-263
IRFS11N50A N-CH U=500V I=11A R=0,52Oм D2PAK=TO-263
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)SiHFZ34-E3 |
Hersteller: Vishay Siliconix
IRFZ34PBF TO-220-3
IRFZ34PBF TO-220-3
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)IRLL110PBF : IRLL110TRPBF |
Hersteller: Vishay Siliconix
IRLL110PBF SOT-223
IRLL110PBF SOT-223
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)SI2301BDS-T1-GE3 |
Hersteller: Vishay Siliconix
Si2301BDS P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
Si2301BDS P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)SI2323DS-T1-E3 |
Hersteller: Vishay Siliconix
MOSFET P-Ch, 20V, 3.7A, SOT-23-3
MOSFET P-Ch, 20V, 3.7A, SOT-23-3
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)SI2333DDS-T1-GE3 |
Hersteller: Vishay Siliconix
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
P-Channel 12V 6A (Tc) 1.2W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)SI5403DC-T1-GE3 |
Hersteller: Vishay Siliconix
(1206-8,P-ch,Mosfet,30B,6A)
(1206-8,P-ch,Mosfet,30B,6A)
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)SIA907EDJT-T1-GE3 |
Hersteller: Vishay Siliconix
MOSFET -20V 57mOhm@4.5V 4.5A P-Ch G-III
MOSFET -20V 57mOhm@4.5V 4.5A P-Ch G-III
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)