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IRFP150NPBF IRFP150NPBF INFINEON TECHNOLOGIES irfp150n.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 374 Stücke:
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24+3.64 EUR
39+2.19 EUR
46+1.89 EUR
100+1.59 EUR
125+1.57 EUR
250+1.48 EUR
Mindestbestellmenge: 24 Stücke
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BTS70101EPAXUMA1 BTS70101EPAXUMA1 INFINEON TECHNOLOGIES Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Supply voltage: 4.1...28V DC
Mounting: SMD
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
auf Bestellung 2267 Stücke:
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44+1.94 EUR
56+1.54 EUR
61+1.42 EUR
64+1.34 EUR
100+1.31 EUR
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BAW101E6327HTSA1 BAW101E6327HTSA1 INFINEON TECHNOLOGIES BAW101E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
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ICE2QR0665XKLA1 ICE2QR0665XKLA1 INFINEON TECHNOLOGIES Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
auf Bestellung 1745 Stücke:
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26+3.28 EUR
32+2.74 EUR
34+2.55 EUR
36+2.38 EUR
50+2.34 EUR
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
auf Bestellung 1700 Stücke:
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50+9.5 EUR
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES IKD03N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Mounting: SMD
Pulsed drain current: 9.6A
Power dissipation: 38W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
Case: PG-TO252
Produkt ist nicht verfügbar
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BSC109N10NS3GATMA1 BSC109N10NS3GATMA1 INFINEON TECHNOLOGIES BSC109N10NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP135IXTSA1 BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IR2127STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
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IR21271STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES IPD70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Gate-source voltage: ±16V
auf Bestellung 2446 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.23 EUR
117+0.74 EUR
164+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES IPN70R900P7S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
Produkt ist nicht verfügbar
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IPS70R900P7SAKMA1 INFINEON TECHNOLOGIES infineon-ips70r900p7s-ds-en.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR21531STRPBF INFINEON TECHNOLOGIES ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Mounting: SMD
Input voltage: 10...15.6V
Output current: 0.26A
Produkt ist nicht verfügbar
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES TLS115B0.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IDWD40G120C5XKSA1 INFINEON TECHNOLOGIES Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 IKA08N65F5XKSA1 INFINEON TECHNOLOGIES fundamentals-of-power-semiconductors Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Manufacturer series: F5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
26+3.33 EUR
39+2.23 EUR
50+2.11 EUR
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES IPZ60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
5+19.74 EUR
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IMZA65R048M1HXKSA1 IMZA65R048M1HXKSA1 INFINEON TECHNOLOGIES Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 63mΩ
Pulsed drain current: 100A
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
7+12.51 EUR
9+10.08 EUR
10+8.58 EUR
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BSS606NH6327XTSA1 BSS606NH6327XTSA1 INFINEON TECHNOLOGIES BSS606NH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.98 EUR
143+0.6 EUR
196+0.44 EUR
223+0.38 EUR
500+0.3 EUR
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PVI5033RSPBF PVI5033RSPBF INFINEON TECHNOLOGIES IRSDS10627-1.pdf?t.download=true&u=5oefqw Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
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6+16.47 EUR
7+13.6 EUR
25+11.95 EUR
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PVI5033RS-TPBF PVI5033RS-TPBF INFINEON TECHNOLOGIES PVI5033RS-TPBF.pdf Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IRS2982STRPBF IRS2982STRPBF INFINEON TECHNOLOGIES IRS2982S-DTE.pdf Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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BTS443P BTS443P INFINEON TECHNOLOGIES BTS443P_DS_v10.pdf description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
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BTS443PAUMA1 INFINEON TECHNOLOGIES Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
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PVG612APBF PVG612APBF INFINEON TECHNOLOGIES pvg612a.pdf?fileId=5546d462533600a401535683ca14293a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
50+11.57 EUR
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IRFP3710PBF IRFP3710PBF INFINEON TECHNOLOGIES irfp3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Technology: HEXFET®
Drain current: 51A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 180W
Gate charge: 66.7nC
Polarisation: unipolar
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
36+2.42 EUR
37+2.31 EUR
38+2.28 EUR
39+2.21 EUR
100+2.09 EUR
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IRFP3415PBF IRFP3415PBF INFINEON TECHNOLOGIES irfp3415.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.53 EUR
30+2.89 EUR
32+2.73 EUR
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IRFP3703PBF IRFP3703PBF INFINEON TECHNOLOGIES irfp3703.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+85.08 EUR
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BCR08PNH6327 BCR08PNH6327 INFINEON TECHNOLOGIES BCR08PNH6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Kind of transistor: BRT; complementary pair
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Collector current: 0.1A
auf Bestellung 2590 Stücke:
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365+0.24 EUR
410+0.2 EUR
465+0.18 EUR
535+0.15 EUR
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IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES irfp4368pbf.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR4426STRPBF INFINEON TECHNOLOGIES ir4426.pdf?fileId=5546d462533600a4015355d60b491822 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IPP030N10N5XKSA1 IPP030N10N5XKSA1 INFINEON TECHNOLOGIES Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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13+6.93 EUR
15+5.66 EUR
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IPP030N10N3GXKSA1 IPP030N10N3GXKSA1 INFINEON TECHNOLOGIES IPP030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.9 EUR
21+4.07 EUR
50+3.81 EUR
100+3.68 EUR
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IPI030N10N3GXKSA1 IPI030N10N3GXKSA1 INFINEON TECHNOLOGIES IPI030N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC030N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IPA030N10NF2SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 2ED2106S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2182-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.05mΩ
Drain current: 119A
Drain-source voltage: 60V
Power dissipation: 150W
Kind of channel: enhancement
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.67 EUR
60+1.44 EUR
63+1.36 EUR
72+1.19 EUR
100+1.06 EUR
Mindestbestellmenge: 52 Stücke
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327HTSA1 INFINEON TECHNOLOGIES SMBTA06UPNE6327.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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FM24CL16B-G FM24CL16B-G INFINEON TECHNOLOGIES Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Kind of interface: serial
Memory organisation: 2kx8bit
Case: SO8
Interface: I2C
Kind of memory: FRAM
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.74 EUR
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S25FL032P0XMFA010 S25FL032P0XMFA010 INFINEON TECHNOLOGIES Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
14+6.13 EUR
Mindestbestellmenge: 14 Stücke
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S25FL064LABMFI010 S25FL064LABMFI010 INFINEON TECHNOLOGIES infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.95 EUR
16+5.38 EUR
25+4.66 EUR
100+4.5 EUR
Mindestbestellmenge: 15 Stücke
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IPB100N04S4H2ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Power dissipation: 115W
Drain current: 100A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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IPC100N04S5-2R8 IPC100N04S5-2R8 INFINEON TECHNOLOGIES IPC100N04S52R8.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 75W
Gate charge: 45nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S5-1R9 INFINEON TECHNOLOGIES IPC100N04S51R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 100W
Gate charge: 65nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L-1R5 INFINEON TECHNOLOGIES IPC100N04S5L1R5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303ATMA1 INFINEON TECHNOLOGIES IPB100N04S303.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO263-3
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ T
Drain current: 100A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L-1R1 INFINEON TECHNOLOGIES IPC100N04S5L1R1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 150W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L-1R9 INFINEON TECHNOLOGIES IPC100N04S5L1R9.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 100W
Gate charge: 81nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L-2R6 INFINEON TECHNOLOGIES IPC100N04S5L2R6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 75W
Gate charge: 55nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 IAUC100N04S6L014ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 100W
Gate charge: 65nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6L020ATMA1 IAUC100N04S6L020ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 75W
Gate charge: 46nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IRFB7530PBF IRFB7530PBF INFINEON TECHNOLOGIES irfs7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IRFP7530PBF IRFP7530PBF INFINEON TECHNOLOGIES irfp7530pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
16+5.57 EUR
17+5.03 EUR
25+3.47 EUR
30+2.84 EUR
50+2.77 EUR
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IPP015N04NGXKSA1 IPP015N04NGXKSA1 INFINEON TECHNOLOGIES IPP015N04NG-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
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IPP015N04NF2SAKMA1 IPP015N04NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.42 EUR
39+2.23 EUR
45+1.93 EUR
46+1.86 EUR
Mindestbestellmenge: 36 Stücke
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ISC015N04NM5ATMA1 ISC015N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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IRFP150NPBF description irfp150n.pdf
IRFP150NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 160W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 160W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 374 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
24+3.64 EUR
39+2.19 EUR
46+1.89 EUR
100+1.59 EUR
125+1.57 EUR
250+1.48 EUR
Mindestbestellmenge: 24 Stücke
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BTS70101EPAXUMA1 Infineon-BTS7010-1EPA-DataSheet-v01_02-EN.pdf?fileId=5546d462636cc8fb0163fe8fada108bf
BTS70101EPAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Supply voltage: 4.1...28V DC
Mounting: SMD
Output current: 9A
Type of integrated circuit: power switch
Kind of output: N-Channel
Operating temperature: -40...150°C
Technology: PROFET™+2
Kind of package: reel; tape
Case: PG-TSDSO-14
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 19.5mΩ
auf Bestellung 2267 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
44+1.94 EUR
56+1.54 EUR
61+1.42 EUR
64+1.34 EUR
100+1.31 EUR
Mindestbestellmenge: 44 Stücke
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BAW101E6327HTSA1 BAW101E6327HTSA1.pdf
BAW101E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 1us; SOT143; Ufmax: 1.3V; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 300V
Load current: 0.25A
Reverse recovery time: 1µs
Semiconductor structure: double independent
Case: SOT143
Max. forward voltage: 1.3V
Kind of package: reel; tape
Power dissipation: 0.35W
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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ICE2QR0665XKLA1 Datasheet_ICE2QR0665_v23_20100517.pdf?folderId=db3a30431a5c32f2011a77f9c03e6cb4&fileId=db3a3043271faefd012729aa8ec44dab
ICE2QR0665XKLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 39÷65kHz; Ch: 1; DIP8; flyback; Ubr: 650V
Type of integrated circuit: PMIC
Topology: flyback
Kind of integrated circuit: PWM controller
Case: DIP8
Number of channels: 1
Mounting: THT
Operating temperature: -25...130°C
Application: SMPS
Operating voltage: 10.5...24V DC
Frequency: 39...65kHz
Breakdown voltage: 650V
Input voltage: 85...265V
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.28 EUR
32+2.74 EUR
34+2.55 EUR
36+2.38 EUR
50+2.34 EUR
Mindestbestellmenge: 26 Stücke
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBFHLLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; 2.5kV; SMD8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 2.5kV
Case: SMD8
Turn-on time: 90µs
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+9.5 EUR
Mindestbestellmenge: 50 Stücke
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IKD03N60RFATMA1 IKD03N60RF.pdf
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Pulsed collector current: 7.5A
Turn-on time: 17ns
Turn-off time: 265ns
Gate-emitter voltage: ±20V
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
On-state resistance: 1.4Ω
Mounting: SMD
Pulsed drain current: 9.6A
Power dissipation: 38W
Polarisation: unipolar
Technology: CoolMOS™
Drain current: 2A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±20V
Case: PG-TO252
Produkt ist nicht verfügbar
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BSC109N10NS3GATMA1 BSC109N10NS3G-DTE.pdf
BSC109N10NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 78W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 78W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
BSP135IXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 120mA; 1.8W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.12A
Power dissipation: 1.8W
Case: SOT23
On-state resistance: 30Ω
Mounting: SMD
Gate charge: 3.7nC
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62.pdf
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector current: 0.1A
Collector-emitter voltage: 30V
Power dissipation: 0.3W
Polarisation: bipolar
Type of transistor: PNP x2
Produkt ist nicht verfügbar
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IR2127STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; Ch: 1; MOSFET; Uin: 12÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 12...20V
Voltage class: 600V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IR21271STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 500mA; Ch: 1; MOSFET; U: 600V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Number of channels: 1
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Voltage class: 600V
Output current: 0.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD70R900P7SAUMA1 IPD70R900P7S.pdf
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Gate-source voltage: ±16V
auf Bestellung 2446 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
70+1.23 EUR
117+0.74 EUR
164+0.52 EUR
500+0.39 EUR
1000+0.35 EUR
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IPN70R900P7SATMA1 IPN70R900P7S.pdf
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Gate-source voltage: ±16V
Version: ESD
Produkt ist nicht verfügbar
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IPS70R900P7SAKMA1 infineon-ips70r900p7s-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; 30.5W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 30.5W
Case: TO251
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 6.9nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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IR21531STRPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 260mA; Ch: 2; bridge; U: 600V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: bridge
Voltage class: 600V
Case: SOIC8
Kind of integrated circuit: high-side; low-side
Number of channels: 2
Mounting: SMD
Input voltage: 10...15.6V
Output current: 0.26A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLS115B0LDXUMA1 TLS115B0.pdf
TLS115B0LDXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IDWD40G120C5XKSA1 Infineon-IDWD40G120C5-DS-v02_00-EN.pdf?fileId=5546d462689a790c016933d56ffd548f
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; 402W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 290A
Power dissipation: 402W
Produkt ist nicht verfügbar
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IKA08N65F5XKSA1 fundamentals-of-power-semiconductors
IKA08N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Collector current: 6.8A
Manufacturer series: F5
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
26+3.33 EUR
39+2.23 EUR
50+2.11 EUR
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IPZ60R040C7XKSA1 IPZ60R040C7-DTE.pdf
IPZ60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Mounting: THT
Power dissipation: 227W
Polarisation: unipolar
Technology: CoolMOS™ C7
Features of semiconductor devices: Kelvin terminal
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: PG-TO247-4
On-state resistance: 40mΩ
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
5+19.74 EUR
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IMZA65R048M1HXKSA1 Infineon-IMZA65R048M1H-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f85d9ac090535
IMZA65R048M1HXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Mounting: THT
Power dissipation: 125W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 24A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Kind of package: tube
Case: TO247-4
On-state resistance: 63mΩ
Pulsed drain current: 100A
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
7+12.51 EUR
9+10.08 EUR
10+8.58 EUR
Mindestbestellmenge: 7 Stücke
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BSS606NH6327XTSA1 BSS606NH6327XTSA1.pdf
BSS606NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; 1W; PG-SOT89
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Power dissipation: 1W
Case: PG-SOT89
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 637 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
88+0.98 EUR
143+0.6 EUR
196+0.44 EUR
223+0.38 EUR
500+0.3 EUR
Mindestbestellmenge: 88 Stücke
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PVI5033RSPBF IRSDS10627-1.pdf?t.download=true&u=5oefqw
PVI5033RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Kind of output: photodiode
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 2.5ms
Case: Gull wing 8
Turn-off time: 5ms
Number of channels: 2
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
6+16.47 EUR
7+13.6 EUR
25+11.95 EUR
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PVI5033RS-TPBF PVI5033RS-TPBF.pdf
PVI5033RS-TPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Manufacturer series: PVI5033RPbF
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Turn-off time: 0.5ms
Turn-on time: 2.5ms
Number of channels: 2
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
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IRS2982STRPBF IRS2982S-DTE.pdf
IRS2982STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; SMPS controller,LED driver; PG-DSO-8; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: LED driver; SMPS controller
Case: PG-DSO-8
Output current: 200...400mA
Number of channels: 1
Integrated circuit features: PWM
Mounting: SMD
Operating voltage: 12.8...18V DC
Topology: flyback
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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BTS443P description BTS443P_DS_v10.pdf
BTS443P
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
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BTS443PAUMA1 Infineon-BTS443P-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa9afbc5035d5
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...36V DC
Technology: High Current PROFET
Output voltage: 43V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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PVG612APBF pvg612a.pdf?fileId=5546d462533600a401535683ca14293a
PVG612APBF
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; Icntrl max: 25mA; 2A
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Max. operating current: 2A
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
On-state resistance: 0.1Ω
Turn-on time: 3.5ms
Turn-off time: 0.5ms
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
50+11.57 EUR
Mindestbestellmenge: 50 Stücke
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IRFP3710PBF irfp3710.pdf
IRFP3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 51A; 180W; TO247AC
Technology: HEXFET®
Drain current: 51A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO247AC
On-state resistance: 25mΩ
Mounting: THT
Power dissipation: 180W
Gate charge: 66.7nC
Polarisation: unipolar
auf Bestellung 371 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.55 EUR
36+2.42 EUR
37+2.31 EUR
38+2.28 EUR
39+2.21 EUR
100+2.09 EUR
Mindestbestellmenge: 34 Stücke
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IRFP3415PBF irfp3415.pdf
IRFP3415PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.53 EUR
30+2.89 EUR
32+2.73 EUR
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IRFP3703PBF irfp3703.pdf
IRFP3703PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1+85.08 EUR
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BCR08PNH6327 BCR08PNH6327.pdf
BCR08PNH6327
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Kind of transistor: BRT; complementary pair
Base-emitter resistor: 47kΩ
Frequency: 170MHz
Collector current: 0.1A
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
365+0.24 EUR
410+0.2 EUR
465+0.18 EUR
535+0.15 EUR
Mindestbestellmenge: 365 Stücke
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IRFP4368PBF description irfp4368pbf.pdf
IRFP4368PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IR4426STRPBF ir4426.pdf?fileId=5546d462533600a4015355d60b491822
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side; SOIC8; 1.5A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: low-side
Case: SOIC8
Output current: 1.5A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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IPP030N10N5XKSA1 Infineon-IPP030N10N5-DS-v02_03-EN.pdf?fileId=5546d4624a75e5f1014ac4e0b47c1f49
IPP030N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: TO220-3
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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13+6.93 EUR
15+5.66 EUR
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IPP030N10N3GXKSA1 IPP030N10N3G-DTE.pdf
IPP030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.9 EUR
21+4.07 EUR
50+3.81 EUR
100+3.68 EUR
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IPI030N10N3GXKSA1 IPI030N10N3G-DTE.pdf
IPI030N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 300W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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ISC030N10NM6ATMA1 Infineon-ISC030N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bb9a9887300a4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 179A; 208W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 179A
Power dissipation: 208W
Case: PG-TDSON-8 FL
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA030N10NF2SXKSA1 Infineon-IPA030N10NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0179176bf1c41165
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 83A; 41W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 154nC
On-state resistance: 3mΩ
Power dissipation: 41W
Drain-source voltage: 100V
Drain current: 83A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED2106S06FXUMA1 infineon-2ed2182-4-s06f-j-datasheet-en.pdf
2ED2106S06FXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -0.7...0.29A
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Supply voltage: 10...20V
Protection: undervoltage UVP
Voltage class: 650V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
IPP030N06NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 119A; 150W; TO220-3
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220-3
Polarisation: unipolar
Gate charge: 68nC
On-state resistance: 3.05mΩ
Drain current: 119A
Drain-source voltage: 60V
Power dissipation: 150W
Kind of channel: enhancement
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
52+1.67 EUR
60+1.44 EUR
63+1.36 EUR
72+1.19 EUR
100+1.06 EUR
Mindestbestellmenge: 52 Stücke
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SMBTA06UPNE6327HTSA1 SMBTA06UPNE6327.pdf
SMBTA06UPNE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Kind of transistor: complementary pair
Produkt ist nicht verfügbar
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FM24CL16B-G Infineon-FM24CL16B_16-Kbit_(2_K_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec99cb241e9
FM24CL16B-G
Hersteller: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; I2C; 2kx8bit; 2.7÷3.65VDC; 1MHz; SO8
Mounting: SMD
Supply voltage: 2.7...3.65V DC
Type of integrated circuit: FRAM memory
Operating temperature: -40...85°C
Clock frequency: 1MHz
Memory: 16kb FRAM
Kind of interface: serial
Memory organisation: 2kx8bit
Case: SO8
Interface: I2C
Kind of memory: FRAM
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
18+4.74 EUR
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S25FL032P0XMFA010 Infineon-S25FL032P_32-Mbit_3.0_V_Flash_Memory-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4e2dd5369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL032P0XMFA010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; SPI; 104MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: SPI
Operating frequency: 104MHz
Operating voltage: 2.7...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
14+6.13 EUR
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S25FL064LABMFI010 infineon-s25fl064l-64-mbit-8-mbyte-3-datasheet-en.pdf
S25FL064LABMFI010
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; SPI; 108MHz; 2.7÷3.6V; SO8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating voltage: 2.7...3.6V
Operating frequency: 108MHz
Case: SO8
Operating temperature: -40...85°C
auf Bestellung 667 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
15+5.95 EUR
16+5.38 EUR
25+4.66 EUR
100+4.5 EUR
Mindestbestellmenge: 15 Stücke
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IPB100N04S4H2ATMA1 Infineon-IPP_B_I100N04S4_H2-DS-v01_00-en.pdf?fileId=db3a304328c6bd5c01291c2758925d17&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK-3
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhancement
Power dissipation: 115W
Drain current: 100A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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IPC100N04S5-2R8 IPC100N04S52R8.pdf
IPC100N04S5-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 75W
Gate charge: 45nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Produkt ist nicht verfügbar
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IPC100N04S5-1R9 IPC100N04S51R9.pdf
IPC100N04S5-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 100W
Gate charge: 65nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-1R5 IPC100N04S5L1R5.pdf
IPC100N04S5L-1R5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB100N04S303ATMA1 IPB100N04S303.pdf
IPB100N04S303ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 100A; 214W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO263-3
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of channel: enhancement
Power dissipation: 214W
Technology: OptiMOS™ T
Drain current: 100A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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IPC100N04S5L-1R1 IPC100N04S5L1R1.pdf
IPC100N04S5L-1R1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 150W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 150W
Gate charge: 0.14µC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 1.1mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-1R9 IPC100N04S5L1R9.pdf
IPC100N04S5L-1R9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 100W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 100W
Gate charge: 81nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Produkt ist nicht verfügbar
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IPC100N04S5L-2R6 IPC100N04S5L2R6.pdf
IPC100N04S5L-2R6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Power dissipation: 75W
Gate charge: 55nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Produkt ist nicht verfügbar
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IAUC100N04S6L014ATMA1 Infineon-IAUC100N04S6L014-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c35a9690def
IAUC100N04S6L014ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 100W
Gate charge: 65nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IAUC100N04S6L020ATMA1 Infineon-IAUC100N04S6L020-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c5a4e5b0dfa
IAUC100N04S6L020ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; Idm: 400A
Case: PG-TDSON-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 400A
Power dissipation: 75W
Gate charge: 46nC
Polarisation: unipolar
Technology: OptiMOS™ 6
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±16V
On-state resistance: 2.7mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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IRFB7530PBF irfs7530pbf.pdf
IRFB7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 295A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 295A
Power dissipation: 375W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
Produkt ist nicht verfügbar
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IRFP7530PBF irfp7530pbf.pdf
IRFP7530PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 281A; 341W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 281A
Power dissipation: 341W
Case: TO247AC
Mounting: THT
Kind of channel: enhancement
On-state resistance: 2mΩ
Trade name: StrongIRFET
Gate charge: 274nC
Gate-source voltage: ±20V
Kind of package: tube
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
16+5.57 EUR
17+5.03 EUR
25+3.47 EUR
30+2.84 EUR
50+2.77 EUR
Mindestbestellmenge: 16 Stücke
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IPP015N04NGXKSA1 IPP015N04NG-DTE.pdf
IPP015N04NGXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
3+28.37 EUR
Mindestbestellmenge: 3 Stücke
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IPP015N04NF2SAKMA1 Infineon-IPP015N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c82ce56640183175b60d92ae3
IPP015N04NF2SAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 188W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 188W
Case: TO220-3
On-state resistance: 1.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 106nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
36+2.42 EUR
39+2.23 EUR
45+1.93 EUR
46+1.86 EUR
Mindestbestellmenge: 36 Stücke
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ISC015N04NM5ATMA1 Infineon-ISC015N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4302e0001
ISC015N04NM5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 206A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 206A
Power dissipation: 115W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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