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IXFL70N60Q2 IXFL70N60Q2 IXYS Description: MOSFET N-CH 600V 37A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
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IXFL80N50Q2 IXYS IXFL80N50Q2.pdf Description: MOSFET N-CH 500V 55A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 40A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN120N25 IXFN120N25 IXYS Description: MOSFET N-CH 250V 120A SOT-227B
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IXFN20N120 IXFN20N120 IXYS 99116.pdf Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
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IXFN21N100Q IXFN21N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn21n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 21A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
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IXFN230N10 IXFN230N10 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn230n10_datasheet.pdf.pdf Description: MOSFET N-CH 100V 230A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN24N90Q IXFN24N90Q IXYS Description: MOSFET N-CH 900V 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Power Dissipation (Max): 500W (Tc)
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
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IXFN27N80Q IXFN27N80Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn27n80q_datasheet.pdf.pdf description Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
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IXFN280N07 IXFN280N07 IXYS IXFN280N07.pdf Description: MOSFET N-CH 70V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXFN280N085 IXFN280N085 IXYS Description: MOSFET N-CH 85V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN32N80P IXFN32N80P IXYS IXFN32N80P.pdf Description: MOSFET N-CH 800V 29A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
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IXFN34N80 IXFN34N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn34n80_datasheet.pdf.pdf description Description: MOSFET N-CH 800V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IXFN38N100Q2 IXFN38N100Q2 IXYS IXFN38N100Q2.pdf Description: MOSFET N-CH 1000V 38A SOT-227
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IXFN38N80Q2 IXFN38N80Q2 IXYS IXF%28K%2CN%2CX%2938N80Q2.pdf Description: MOSFET N-CH 800V 38A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
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IXFN39N90 IXFN39N90 IXYS description Description: MOSFET N-CH 900V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IXFN44N60 IXFN44N60 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n60_datasheet.pdf.pdf description Description: MOSFET N-CH 600V 44A SOT-227B
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IXFN44N80 IXFN44N80 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n80_datasheet.pdf.pdf Description: MOSFET N-CH 800V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
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IXFN48N50Q IXFN48N50Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn48n50q_datasheet.pdf.pdf Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
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IXFN50N80Q2 IXFN50N80Q2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn50n80q2_datasheet.pdf.pdf Description: MOSFET N-CH 800V 50A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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IXFN64N50PD2 IXFN64N50PD2 IXYS Description: MOSFET N-CH 500V 52A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
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IXFN66N50Q2 IXFN66N50Q2 IXYS IXFN66N50Q2.pdf Description: MOSFET N-CH 500V 66A SOT-227B
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IXFN70N60Q2 IXFN70N60Q2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN70N60Q2-Datasheet.PDF?assetguid=26451419-90D3-4F24-A471-7858604F72B7 Description: MOSFET N-CH 600V 70A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 35A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
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IXFN72N55Q2 IXFN72N55Q2 IXYS 99030.pdf Description: MOSFET N-CH 550V 72A SOT-227B
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IXFN73N30Q IXFN73N30Q IXYS Description: MOSFET N-CH 300V 73A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
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IXFN80N50Q2 IXFN80N50Q2 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q2_datasheet.pdf.pdf Description: MOSFET N-CH 500V 72A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
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IXFN90N30 IXFN90N30 IXYS 98540.pdf Description: MOSFET N-CH 300V 90A SOT-227B
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IXFP12N50PM IXFP12N50PM IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp12n50pm_datasheet.pdf.pdf Description: MOSFET N-CH 500V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
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IXFP3N50PM IXFP3N50PM IXYS 99509.pdf Description: MOSFET N-CH 500V 2.7A TO-220
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IXFP3N80 IXFP3N80 IXYS IXFA3N80.pdf Description: MOSFET N-CH 800V 3.6A TO-220
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IXFP5N50PM IXFP5N50PM IXYS IXFP%205N50PM.pdf Description: MOSFET N-CH 500V 3.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
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IXFP7N80P IXFP7N80P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IXFP7N80PM IXFP7N80PM IXYS Description: MOSFET N-CH 800V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP8N50PM IXFP8N50PM IXYS 99484.pdf Description: MOSFET N-CH 500V 4.4A TO-220
Produkt ist nicht verfügbar
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IXFQ10N80P IXFQ10N80P IXYS littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1 Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ12N80P IXFQ12N80P IXYS IXF%28H%2CQ%2912N80P%2C%20IXFV12N80P%2CPS.pdf Description: MOSFET N-CH 800V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ14N80P IXFQ14N80P IXYS littelfuse-discrete-mosfets-ixf-14n80p-datasheet?assetguid=295cb4f7-ab84-42cd-94fb-12395b127fd1 Description: MOSFET N-CH 800V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ21N50Q IXFQ21N50Q IXYS Description: MOSFET N-CH 500V 21A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFQ23N60Q IXFQ23N60Q IXYS Description: MOSFET N-CH 600V 23A TO268
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Supplier Device Package: TO-268AA
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IXFQ24N50Q IXFQ24N50Q IXYS Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFQ26N50Q IXFQ26N50Q IXYS Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-3P
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFR14N100Q2 IXFR14N100Q2 IXYS IXFR14N100Q2.pdf Description: MOSFET N-CH 1000V 9.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR15N80Q IXFR15N80Q IXYS Description: MOSFET N-CH 800V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR21N100Q IXFR21N100Q IXYS 98723.pdf Description: MOSFET N-CH 1KV 18A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR24N50Q IXFR24N50Q IXYS Description: MOSFET N-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR24N90Q IXFR24N90Q IXYS Description: MOSFET N-CH 900V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
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IXFR26N50Q IXFR26N50Q IXYS Description: MOSFET N-CH 500V 24A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR26N60Q IXFR26N60Q IXYS Description: MOSFET N-CH 600V 23A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR27N80Q IXFR27N80Q IXYS IXF(K,R,X)27N80Q.pdf Description: MOSFET N-CH 800V 27A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR32N50Q IXFR32N50Q IXYS Description: MOSFET N-CH 500V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR32N80P IXFR32N80P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr32n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR38N80Q2 IXFR38N80Q2 IXYS IXFR38N80Q2.pdf Description: MOSFET N-CH 800V 28A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 19A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR48N50Q IXFR48N50Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr4_n50q_datasheet.pdf.pdf Description: MOSFET N-CH 500V 40A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR50N50 IXFR50N50 IXYS Description: MOSFET N-CH 500V 43A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR52N30Q IXFR52N30Q IXYS Description: MOSFET N-CH 300V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
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IXFR66N50Q2 IXFR66N50Q2 IXYS DS99076A(IXFR66N50Q2).pdf Description: MOSFET N-CH 500V 50A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR90N20Q IXFR90N20Q IXYS Description: MOSFET N-CH 200V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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IXFR90N30 IXFR90N30 IXYS Description: MOSFET N-CH 300V 75A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR9N80Q IXFR9N80Q IXYS Description: MOSFET N-CH 800V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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IXFT12N100Q IXFT12N100Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n100q_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT12N90Q IXFT12N90Q IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n90q_datasheet.pdf.pdf Description: MOSFET N-CH 900V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFL70N60Q2
IXFL70N60Q2
Hersteller: IXYS
Description: MOSFET N-CH 600V 37A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 92mOhm @ 35A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFL80N50Q2 IXFL80N50Q2.pdf
Hersteller: IXYS
Description: MOSFET N-CH 500V 55A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 40A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
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IXFN120N25
IXFN120N25
Hersteller: IXYS
Description: MOSFET N-CH 250V 120A SOT-227B
Produkt ist nicht verfügbar
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IXFN20N120 99116.pdf
IXFN20N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 20A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 500mA, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN21N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn21n100q_datasheet.pdf.pdf
IXFN21N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 21A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN230N10 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn230n10_datasheet.pdf.pdf
IXFN230N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 230A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 570 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN24N90Q
IXFN24N90Q
Hersteller: IXYS
Description: MOSFET N-CH 900V 24A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Power Dissipation (Max): 500W (Tc)
Supplier Device Package: SOT-227B
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
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IXFN27N80Q description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn27n80q_datasheet.pdf.pdf
IXFN27N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN280N07 IXFN280N07.pdf
IXFN280N07
Hersteller: IXYS
Description: MOSFET N-CH 70V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 120A, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
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IXFN280N085
IXFN280N085
Hersteller: IXYS
Description: MOSFET N-CH 85V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 100A, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN32N80P IXFN32N80P.pdf
IXFN32N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 29A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 16A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN34N80 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn34n80_datasheet.pdf.pdf
IXFN34N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 34A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IXFN38N100Q2 IXFN38N100Q2.pdf
IXFN38N100Q2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 38A SOT-227
Produkt ist nicht verfügbar
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IXFN38N80Q2 IXF%28K%2CN%2CX%2938N80Q2.pdf
IXFN38N80Q2
Hersteller: IXYS
Description: MOSFET N-CH 800V 38A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
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IXFN39N90 description
IXFN39N90
Hersteller: IXYS
Description: MOSFET N-CH 900V 39A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 390 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V
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IXFN44N60 description littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n60_datasheet.pdf.pdf
IXFN44N60
Hersteller: IXYS
Description: MOSFET N-CH 600V 44A SOT-227B
Produkt ist nicht verfügbar
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IXFN44N80 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn44n80_datasheet.pdf.pdf
IXFN44N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 44A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 500mA, 10V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN48N50Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn48n50q_datasheet.pdf.pdf
IXFN48N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN50N80Q2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn50n80q2_datasheet.pdf.pdf
IXFN50N80Q2
Hersteller: IXYS
Description: MOSFET N-CH 800V 50A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1135W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13500 pF @ 25 V
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IXFN64N50PD2
IXFN64N50PD2
Hersteller: IXYS
Description: MOSFET N-CH 500V 52A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 25 V
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IXFN66N50Q2 IXFN66N50Q2.pdf
IXFN66N50Q2
Hersteller: IXYS
Description: MOSFET N-CH 500V 66A SOT-227B
Produkt ist nicht verfügbar
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IXFN70N60Q2 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXFN70N60Q2-Datasheet.PDF?assetguid=26451419-90D3-4F24-A471-7858604F72B7
IXFN70N60Q2
Hersteller: IXYS
Description: MOSFET N-CH 600V 70A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 35A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN72N55Q2 99030.pdf
IXFN72N55Q2
Hersteller: IXYS
Description: MOSFET N-CH 550V 72A SOT-227B
Produkt ist nicht verfügbar
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IXFN73N30Q
IXFN73N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V 73A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 500mA, 10V
Power Dissipation (Max): 481W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN80N50Q2 littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50q2_datasheet.pdf.pdf
IXFN80N50Q2
Hersteller: IXYS
Description: MOSFET N-CH 500V 72A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFN90N30 98540.pdf
IXFN90N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 90A SOT-227B
Produkt ist nicht verfügbar
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IXFP12N50PM littelfuse_discrete_mosfets_n-channel_hiperfets_ixfp12n50pm_datasheet.pdf.pdf
IXFP12N50PM
Hersteller: IXYS
Description: MOSFET N-CH 500V 6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP3N50PM 99509.pdf
IXFP3N50PM
Hersteller: IXYS
Description: MOSFET N-CH 500V 2.7A TO-220
Produkt ist nicht verfügbar
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IXFP3N80 IXFA3N80.pdf
IXFP3N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 3.6A TO-220
Produkt ist nicht verfügbar
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IXFP5N50PM IXFP%205N50PM.pdf
IXFP5N50PM
Hersteller: IXYS
Description: MOSFET N-CH 500V 3.2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP7N80P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE
IXFP7N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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IXFP7N80PM
IXFP7N80PM
Hersteller: IXYS
Description: MOSFET N-CH 800V 3.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Produkt ist nicht verfügbar
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IXFP8N50PM 99484.pdf
IXFP8N50PM
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.4A TO-220
Produkt ist nicht verfügbar
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IXFQ10N80P littelfuse-discrete-mosfets-ixf-10n80p-datasheet?assetguid=a565a5d2-4577-4a3a-8c98-1b06bc0768c1
IXFQ10N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ12N80P IXF%28H%2CQ%2912N80P%2C%20IXFV12N80P%2CPS.pdf
IXFQ12N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ14N80P littelfuse-discrete-mosfets-ixf-14n80p-datasheet?assetguid=295cb4f7-ab84-42cd-94fb-12395b127fd1
IXFQ14N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 14A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFQ21N50Q
IXFQ21N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 21A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFQ23N60Q
IXFQ23N60Q
Hersteller: IXYS
Description: MOSFET N-CH 600V 23A TO268
Packaging: Box
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Supplier Device Package: TO-268AA
Drain to Source Voltage (Vdss): 600 V
Produkt ist nicht verfügbar
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IXFQ24N50Q
IXFQ24N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Supplier Device Package: TO-3P
Part Status: Active
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFQ26N50Q
IXFQ26N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 26A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Supplier Device Package: TO-3P
Part Status: Obsolete
Drain to Source Voltage (Vdss): 500 V
Produkt ist nicht verfügbar
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IXFR14N100Q2 IXFR14N100Q2.pdf
IXFR14N100Q2
Hersteller: IXYS
Description: MOSFET N-CH 1000V 9.5A ISOPLS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 7A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR15N80Q
IXFR15N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR21N100Q 98723.pdf
IXFR21N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1KV 18A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR24N50Q
IXFR24N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR24N90Q
IXFR24N90Q
Hersteller: IXYS
Description: MOSFET N-CH 900V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 900 V
Produkt ist nicht verfügbar
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IXFR26N50Q
IXFR26N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 24A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR26N60Q
IXFR26N60Q
Hersteller: IXYS
Description: MOSFET N-CH 600V 23A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 13A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR27N80Q IXF(K,R,X)27N80Q.pdf
IXFR27N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR32N50Q
IXFR32N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 30A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR32N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr32n80p_datasheet.pdf.pdf
IXFR32N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 20A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 16A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR38N80Q2 IXFR38N80Q2.pdf
IXFR38N80Q2
Hersteller: IXYS
Description: MOSFET N-CH 800V 28A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 19A, 10V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR48N50Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr4_n50q_datasheet.pdf.pdf
IXFR48N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 40A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 24A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR50N50
IXFR50N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 43A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 25A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR52N30Q
IXFR52N30Q
Hersteller: IXYS
Description: MOSFET N-CH 300V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Obsolete
Drain to Source Voltage (Vdss): 300 V
Produkt ist nicht verfügbar
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IXFR66N50Q2 DS99076A(IXFR66N50Q2).pdf
IXFR66N50Q2
Hersteller: IXYS
Description: MOSFET N-CH 500V 50A ISOPLUS247
Produkt ist nicht verfügbar
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IXFR90N20Q
IXFR90N20Q
Hersteller: IXYS
Description: MOSFET N-CH 200V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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IXFR90N30
IXFR90N30
Hersteller: IXYS
Description: MOSFET N-CH 300V 75A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V
Produkt ist nicht verfügbar
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IXFR9N80Q
IXFR9N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V ISOPLUS247
Packaging: Box
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: ISOPLUS247™
Drain to Source Voltage (Vdss): 800 V
Produkt ist nicht verfügbar
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IXFT12N100Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n100q_datasheet.pdf.pdf
IXFT12N100Q
Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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IXFT12N90Q littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n90q_datasheet.pdf.pdf
IXFT12N90Q
Hersteller: IXYS
Description: MOSFET N-CH 900V 12A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 6A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Produkt ist nicht verfügbar
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