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IXTA2N80P IXTA2N80P IXYS DS99595F(IXTU-TY-TA-TP2N80P).pdf Description: MOSFET N-CH 800V 2A TO263
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA42N25P IXTA42N25P IXYS 99157.pdf Description: MOSFET N-CH 250V 42A TO-263
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IXTA4N80P IXTA4N80P IXYS media?resourcetype=datasheets&itemid=595AFF53-2A35-43A0-B191-4CBAC9044A16&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-4N80P-Datasheet.PDF Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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IXTA50N20P IXTA50N20P IXYS littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220 Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA62N15P IXTA62N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 62A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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IXTA70N085T IXTA70N085T IXYS Description: MOSFET N-CH 85V 70A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
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IXTA76N075T IXTA76N075T IXYS media?resourcetype=datasheets&itemid=1E751FD9-015D-4B10-BB89-36E11236D56A&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTA76N075T-Datasheet.PDF Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
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IXTA80N10T7 IXTA80N10T7 IXYS Description: MOSFET N-CH 100V 80A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
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IXTA88N085T IXTA88N085T IXYS 159dd045-cdc1-443f-ac0e-2f27c155ca59.pdf Description: MOSFET N-CH 85V 88A TO-263
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IXTA88N085T7 IXTA88N085T7 IXYS f256316f-b4a3-4af7-af20-e4b5de68999f.pdf Description: MOSFET N-CH 85V 88A TO-263-7
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IXTA90N055T IXTA90N055T IXYS Description: MOSFET N-CH 55V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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IXTA98N075T IXTA98N075T IXYS DS99541%28IXTA-IXTP98N075T%29.pdf Description: MOSFET N-CH 75V 98A TO-263
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IXTA98N075T7 IXTA98N075T7 IXYS Description: MOSFET N-CH 75V 98A TO-263-7
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IXTB62N50L IXTB62N50L IXYS DS99336BIXTB62N50Lpdf.PDF Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
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IXTC160N085T IXTC160N085T IXYS Description: MOSFET N-CH 85V 110A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC160N10T IXTC160N10T IXYS Description: MOSFET N-CH 100V 83A ISOPLUS220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
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IXTC180N055T IXTC180N055T IXYS Description: MOSFET N-CH 55V ISOPLUS220
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IXTC180N085T IXTC180N085T IXYS Description: MOSFET N-CH 85V 110A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC180N10T IXTC180N10T IXYS PartDetails.aspx?r=0&pid=995 Description: MOSFET N-CH 100V 90A ISOPLUS220
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IXTC200N085T IXTC200N085T IXYS DS99644(IXTC200N085T).pdf Description: MOSFET N-CH 85V 110A ISOPLUS220
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IXTC200N10T IXTC200N10T IXYS DS99653A(IXTC200N10T).pdf Description: MOSFET N-CH 100V 101A ISOPLUS220
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IXTC220N055T IXTC220N055T IXYS e52c8c2a-4e23-4456-8fec-31e2e3847415.pdf Description: MOSFET N-CH 55V 130A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC220N075T IXTC220N075T IXYS Description: MOSFET N-CH 75V 115A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
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IXTC230N085T IXTC230N085T IXYS trenchmv-power-mosfets.pdf Description: MOSFET N-CH 85V 120A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC240N055T IXTC240N055T IXYS 3b58c1be-62ce-4652-9c59-a165460f1183.pdf Description: MOSFET N-CH 55V 132A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC250N075T IXTC250N075T IXYS DS99655(IXTC250N075T).pdf Description: MOSFET N-CH 75V 128A ISOPLUS220
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IXTC280N055T IXTC280N055T IXYS 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf Description: MOSFET N-CH 55V 145A ISOPLUS220
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IXTF200N10T IXTF200N10T IXYS DS99747B(IXTF200N10T).pdf Description: MOSFET N-CH 100V 90A I4-PAC-5
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IXTF230N085T IXTF230N085T IXYS 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf Description: MOSFET N-CH 85V 130A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
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IXTF250N075T IXTF250N075T IXYS Description: MOSFET N-CH 75V 140A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
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IXTF280N055T IXTF280N055T IXYS 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf Description: MOSFET N-CH 55V 160A I4PAC
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IXTH10N100D IXTH10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO247
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IXTH12N120 IXTH12N120 IXYS Description: MOSFET N-CH 1200V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
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IXTH130N10T IXTH130N10T IXYS DS99708AIXTHIXTQ130N10T.pdf Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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IXTH152N085T IXTH152N085T IXYS ad7328b7-b465-4219-9279-de781003c923.pdf Description: MOSFET N-CH 85V 152A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH160N075T IXTH160N075T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH16P20 IXTH16P20 IXYS 98906.pdf Description: MOSFET P-CH 200V 16A TO-247
Produkt ist nicht verfügbar
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IXTH180N085T IXTH180N085T IXYS 117df8ec-db73-4b77-a16a-478520b75c7a.pdf Description: MOSFET N-CH 85V 180A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH180N10T IXTH180N10T IXYS 9eb2cdbcabd045fc94224c3d8305fcd7.pdf Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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30+9.58 EUR
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510+6.99 EUR
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IXTH182N055T IXTH182N055T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq182n055t_datasheet.pdf.pdf Description: MOSFET N-CH 55V 182A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH200N075T IXTH200N075T IXYS 36401d5f-7628-416f-aae8-0f64c28a1a4a.pdf Description: MOSFET N-CH 75V 200A TO-247
Produkt ist nicht verfügbar
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IXTH200N085T IXTH200N085T IXYS 7e3c037c-de2d-42f0-9652-a1260b6dfbd7.pdf Description: MOSFET N-CH 85V 200A TO247
Produkt ist nicht verfügbar
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IXTH20N50D IXTH20N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH220N055T IXTH220N055T IXYS 161c1af2-a811-48d6-a53d-052a50bed563.pdf Description: MOSFET N-CH 55V 220A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH220N075T IXTH220N075T IXYS Description: MOSFET N-CH 75V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH22N50P IXTH22N50P IXYS littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4 Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
Produkt ist nicht verfügbar
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IXTH230N085T IXTH230N085T IXYS 656b52d9-cdd4-4219-a307-549c63aa7915.pdf Description: MOSFET N-CH 85V 230A TO247
Produkt ist nicht verfügbar
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IXTH240N055T IXTH240N055T IXYS 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf Description: MOSFET N-CH 55V 240A TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
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IXTH250N075T IXTH250N075T IXYS Description: MOSFET N-CH 75V 250A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH280N055T IXTH280N055T IXYS Description: MOSFET N-CH 55V 280A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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IXTH36P10 IXTH36P10 IXYS 98908.pdf Description: MOSFET P-CH 100V 36A TO-247
Produkt ist nicht verfügbar
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IXTH3N120 IXTH3N120 IXYS littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6 Description: MOSFET N-CH 1200V 3A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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IXTH88N15 IXTH88N15 IXYS 99034.pdf Description: MOSFET N-CH 150V 88A TO-247AD
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IXTK120N20P IXTK120N20P IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 200V 120A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK140N20P IXTK140N20P IXYS media?resourcetype=datasheets&itemid=159135EE-4C30-452F-A30B-D4D2A2A6BFCD&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK140N20P-Datasheet.PDF Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTK17N120L IXTK17N120L IXYS Description: MOSFET N-CH 1200V 17A TO264
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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IXTK250N10 IXTK250N10 IXYS Description: MOSFET N-CH 100V 250A TO264
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Box
Produkt ist nicht verfügbar
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IXTL2x180N10T IXYS DS99752BIXTL2x180N10T.pdf Description: MOSFET 2N-CH 100V 100A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Produkt ist nicht verfügbar
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IXTL2X200N085T IXYS bf6c0cec-e8a4-4fae-a69e-5a7e22358774.pdf Description: MOSFET 2N-CH 85V 112A I5-PAK
Produkt ist nicht verfügbar
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IXTL2X220N075T IXYS Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Produkt ist nicht verfügbar
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IXTA2N80P DS99595F(IXTU-TY-TA-TP2N80P).pdf
IXTA2N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 2A TO263
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 50µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA42N25P 99157.pdf
IXTA42N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 42A TO-263
Produkt ist nicht verfügbar
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IXTA4N80P media?resourcetype=datasheets&itemid=595AFF53-2A35-43A0-B191-4CBAC9044A16&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-4N80P-Datasheet.PDF
IXTA4N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 3.6A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA50N20P littelfuse-discrete-mosfets-ixt-50n20p-datasheet?assetguid=93310175-2371-43af-9c53-8351f9872220
IXTA50N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 50A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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IXTA62N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_62n15p_datasheet.pdf.pdf
IXTA62N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 62A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 350W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.56 EUR
50+7.57 EUR
100+6.5 EUR
Mindestbestellmenge: 3 Stücke
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IXTA70N085T
IXTA70N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 70A TO263
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IXTA76N075T media?resourcetype=datasheets&itemid=1E751FD9-015D-4B10-BB89-36E11236D56A&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTA76N075T-Datasheet.PDF
IXTA76N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 25 V
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IXTA80N10T7
IXTA80N10T7
Hersteller: IXYS
Description: MOSFET N-CH 100V 80A TO263-7
Packaging: Tube
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 25A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
Produkt ist nicht verfügbar
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IXTA88N085T 159dd045-cdc1-443f-ac0e-2f27c155ca59.pdf
IXTA88N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 88A TO-263
Produkt ist nicht verfügbar
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IXTA88N085T7 f256316f-b4a3-4af7-af20-e4b5de68999f.pdf
IXTA88N085T7
Hersteller: IXYS
Description: MOSFET N-CH 85V 88A TO-263-7
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IXTA90N055T
IXTA90N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 90A TO263
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 25A, 10V
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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IXTA98N075T DS99541%28IXTA-IXTP98N075T%29.pdf
IXTA98N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 98A TO-263
Produkt ist nicht verfügbar
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IXTA98N075T7
IXTA98N075T7
Hersteller: IXYS
Description: MOSFET N-CH 75V 98A TO-263-7
Produkt ist nicht verfügbar
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IXTB62N50L DS99336BIXTB62N50Lpdf.PDF
IXTB62N50L
Hersteller: IXYS
Description: MOSFET N-CH 500V 62A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 31A, 20V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
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1+102.48 EUR
25+75.58 EUR
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IXTC160N085T
IXTC160N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC160N10T
IXTC160N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 83A ISOPLUS220
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Produkt ist nicht verfügbar
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IXTC180N055T
IXTC180N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V ISOPLUS220
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IXTC180N085T
IXTC180N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC180N10T PartDetails.aspx?r=0&pid=995
IXTC180N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 90A ISOPLUS220
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IXTC200N085T DS99644(IXTC200N085T).pdf
IXTC200N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 110A ISOPLUS220
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IXTC200N10T DS99653A(IXTC200N10T).pdf
IXTC200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 101A ISOPLUS220
Produkt ist nicht verfügbar
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IXTC220N055T e52c8c2a-4e23-4456-8fec-31e2e3847415.pdf
IXTC220N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 130A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC220N075T
IXTC220N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 115A ISOPLUS220
Packaging: Tube
Package / Case: ISOPLUS220™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
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IXTC230N085T trenchmv-power-mosfets.pdf
IXTC230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 120A ISOPLUS220
Drain to Source Voltage (Vdss): 85 V
Supplier Device Package: ISOPLUS220™
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
Produkt ist nicht verfügbar
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IXTC240N055T 3b58c1be-62ce-4652-9c59-a165460f1183.pdf
IXTC240N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 132A ISOPLUS220
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: ISOPLUS220™
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 132A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Packaging: Tube
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IXTC250N075T DS99655(IXTC250N075T).pdf
IXTC250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 128A ISOPLUS220
Produkt ist nicht verfügbar
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IXTC280N055T 63d951d6-c7c1-47e0-8764-776ed58862a1.pdf
IXTC280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 145A ISOPLUS220
Produkt ist nicht verfügbar
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IXTF200N10T DS99747B(IXTF200N10T).pdf
IXTF200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 90A I4-PAC-5
Produkt ist nicht verfügbar
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IXTF230N085T 0e481d03-de4c-45ea-adeb-00d6fd0ad248.pdf
IXTF230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 130A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
Produkt ist nicht verfügbar
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IXTF250N075T
IXTF250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 140A I4PAC
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5
Packaging: Tube
Produkt ist nicht verfügbar
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IXTF280N055T 5fdffdb0-8e57-44af-b934-28cd917aca5c.pdf
IXTF280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 160A I4PAC
Produkt ist nicht verfügbar
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IXTH10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTH10N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO247
Produkt ist nicht verfügbar
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IXTH12N120
IXTH12N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 12A TO247
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Box
Produkt ist nicht verfügbar
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IXTH130N10T DS99708AIXTHIXTQ130N10T.pdf
IXTH130N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 130A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
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IXTH152N085T ad7328b7-b465-4219-9279-de781003c923.pdf
IXTH152N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 152A TO247
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 152A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH160N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth160n075t_datasheet.pdf.pdf
IXTH160N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 160A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH16P20 98906.pdf
IXTH16P20
Hersteller: IXYS
Description: MOSFET P-CH 200V 16A TO-247
Produkt ist nicht verfügbar
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IXTH180N085T 117df8ec-db73-4b77-a16a-478520b75c7a.pdf
IXTH180N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 180A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 85 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH180N10T 9eb2cdbcabd045fc94224c3d8305fcd7.pdf
IXTH180N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 180A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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2+16.42 EUR
30+9.58 EUR
120+8.08 EUR
510+6.99 EUR
1020+6.71 EUR
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IXTH182N055T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtq182n055t_datasheet.pdf.pdf
IXTH182N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 182A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 182A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH200N075T 36401d5f-7628-416f-aae8-0f64c28a1a4a.pdf
IXTH200N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 200A TO-247
Produkt ist nicht verfügbar
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IXTH200N085T 7e3c037c-de2d-42f0-9652-a1260b6dfbd7.pdf
IXTH200N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 200A TO247
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IXTH20N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
IXTH20N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTH220N055T 161c1af2-a811-48d6-a53d-052a50bed563.pdf
IXTH220N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 220A TO247
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IXTH220N075T
IXTH220N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 220A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 25 V
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IXTH22N50P littelfuse-discrete-mosfets-ixt-22n50p-datasheet?assetguid=aa88a2b6-6037-4575-9c3c-a71212b980d4
IXTH22N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 22A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 11A, 10V
Power Dissipation (Max): 350W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 25 V
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IXTH230N085T 656b52d9-cdd4-4219-a307-549c63aa7915.pdf
IXTH230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A TO247
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IXTH240N055T 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf
IXTH240N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 240A TO247
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
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IXTH250N075T
IXTH250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTH280N055T
IXTH280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A TO247
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
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IXTH36P10 98908.pdf
IXTH36P10
Hersteller: IXYS
Description: MOSFET P-CH 100V 36A TO-247
Produkt ist nicht verfügbar
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IXTH3N120 littelfuse-discrete-mosfets-ixta3n120-datasheet?assetguid=0f8a2134-6aa0-4538-a4e2-9a575d3790e6
IXTH3N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 3A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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IXTH88N15 99034.pdf
IXTH88N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 88A TO-247AD
Produkt ist nicht verfügbar
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IXTK120N20P Smart%20Building%20Application%20Guide.pdf
IXTK120N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 120A TO264
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 714W (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTK140N20P media?resourcetype=datasheets&itemid=159135EE-4C30-452F-A30B-D4D2A2A6BFCD&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTK140N20P-Datasheet.PDF
IXTK140N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 140A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 70A, 10V
Power Dissipation (Max): 800W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
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IXTK17N120L
IXTK17N120L
Hersteller: IXYS
Description: MOSFET N-CH 1200V 17A TO264
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 700W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 8.5A, 20V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
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IXTK250N10
IXTK250N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 250A TO264
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-264 (IXTK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 730W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Box
Produkt ist nicht verfügbar
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IXTL2x180N10T DS99752BIXTL2x180N10T.pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 100V 100A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 100A
Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 151nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
Produkt ist nicht verfügbar
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IXTL2X200N085T bf6c0cec-e8a4-4fae-a69e-5a7e22358774.pdf
Hersteller: IXYS
Description: MOSFET 2N-CH 85V 112A I5-PAK
Produkt ist nicht verfügbar
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IXTL2X220N075T
Hersteller: IXYS
Description: MOSFET 2N-CH 75V 120A I5-PAK
Packaging: Tube
Package / Case: ISOPLUSi5-Pak™
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150W
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 120A
Input Capacitance (Ciss) (Max) @ Vds: 7700pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ISOPLUSi5-Pak™
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