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IXTQ230N085T IXTQ230N085T IXYS 656b52d9-cdd4-4219-a307-549c63aa7915.pdf Description: MOSFET N-CH 85V 230A TO3P
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IXTQ240N055T IXTQ240N055T IXYS 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf Description: MOSFET N-CH 55V 240A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
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IXTQ250N075T IXTQ250N075T IXYS Description: MOSFET N-CH 75V 250A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
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IXTQ280N055T IXTQ280N055T IXYS Description: MOSFET N-CH 55V 280A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
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IXTQ40N50Q IXTQ40N50Q IXYS Description: MOSFET N-CH 500V 40A TO3P
Packaging: Box
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTQ96N15P IXTQ96N15P IXYS 99131.pdf Description: MOSFET N-CH 150V 96A TO3P
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IXTR200N10P IXTR200N10P IXYS 99365.pdf Description: MOSFET N-CH 100V 120A ISOPLUS247
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IXTT10N100D IXTT10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTT10P50 IXTT10P50 IXYS IXTH10P50.pdf Description: MOSFET P-CH 500V 10A TO-268
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IXTT10P60 IXTT10P60 IXYS littelfuse_discrete_mosfets_p-channel_ixt_10p60_datasheet.pdf.pdf Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
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IXTT16P20 IXTT16P20 IXYS Description: MOSFET P-CH 200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Supplier Device Package: TO-268AA
Drain to Source Voltage (Vdss): 200 V
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IXTT1N100 IXTT1N100 IXYS 98886.pdf Description: MOSFET N-CH 1000V 1.5A TO-268
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IXTT20N50D IXTT20N50D IXYS Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTT36P10 IXTT36P10 IXYS Description: MOSFET P-CH 100V 36A TO-268
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IXTT50P085 IXTT50P085 IXYS Description: MOSFET P-CH 85V 50A TO-268
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IXTT50P10 IXTT50P10 IXYS DS98905E(IXTH-T50P10).pdf Description: MOSFET P-CH 100V 50A TO-268
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IXTT52N30P IXTT52N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
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IXTT64N25P IXTT64N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
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IXTT69N30P IXTT69N30P IXYS 99078.pdf Description: MOSFET N-CH 300V 69A TO-268
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IXTT74N20P IXTT74N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 74A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
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IXTT88N15 IXTT88N15 IXYS 99034.pdf Description: MOSFET N-CH 150V 88A TO-268
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IXTT8P50 IXTT8P50 IXYS 94534.pdf Description: MOSFET P-CH 500V 8A TO-268
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IXTT96N15P IXTT96N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 219 Stücke:
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2+13.01 EUR
30+10.39 EUR
120+9.29 EUR
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IXTT96N20P IXTT96N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IXTU01N100D IXTU01N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO251
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IXTU01N80 IXTU01N80 IXYS 98841.pdf Description: MOSFET N-CH 800V 100MA TO251
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IXTU02N50D IXTU02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Description: MOSFET N-CH 500V 200MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 356 Stücke:
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IXTU05N120 IXTU05N120 IXYS Description: MOSFET N-CH 1200V 0.5A TO-251
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IXTU06N120P IXTU06N120P IXYS Description: MOSFET N-CH 1200V 600MA TO251
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IXTU1R4N60P IXTU1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO251
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IXTU44N10T IXTU44N10T IXYS Description: MOSFET N-CH 100V 44A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
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IXTU50N085T IXTU50N085T IXYS Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
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IXTU55N075T IXTU55N075T IXYS Description: MOSFET N-CH 75V 55A TO-251
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IXTU5N50P IXTU5N50P IXYS DS99446G(IXTU-TY-TA-TP5N50P).pdf Description: MOSFET N-CH 500V 4.8A TO252
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IXTU64N055T IXTU64N055T IXYS Description: MOSFET N-CH 55V 64A TO-251
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IXTV200N10T IXTV200N10T IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220
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IXTV200N10TS IXTV200N10TS IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220SMD
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IXTV230N085T IXTV230N085T IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS220
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IXTV230N085TS IXTV230N085TS IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS-220SMD
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IXTV250N075T IXTV250N075T IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS220
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IXTV250N075TS IXTV250N075TS IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS-220SMD
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IXTV280N055T IXTV280N055T IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS220
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IXTV280N055TS IXTV280N055TS IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS-220SMD
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IXTX22N100L IXTX22N100L IXYS littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
auf Bestellung 298 Stücke:
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1+73.97 EUR
10+69.03 EUR
100+59.93 EUR
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IXTY01N80 IXTY01N80 IXYS Description: MOSFET N-CH 800V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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IXTY02N50D IXTY02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 3042 Stücke:
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5+4.29 EUR
70+2.32 EUR
140+2.20 EUR
560+1.84 EUR
1050+1.72 EUR
2030+1.61 EUR
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IXTY1N80 IXTY1N80 IXYS 98822.pdf Description: MOSFET N-CH 800V 750MA TO-252AA
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IXTY2N80P IXTY2N80P IXYS DS99595F(IXTU-TY-TA-TP2N80P).pdf Description: MOSFET N-CH 800V 2A TO252
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IXTY50N085T IXTY50N085T IXYS Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY55N075T IXTY55N075T IXYS littelfuse_discrete_mosfets_n-channel_trench_gate_ixty55n075t_datasheet.pdf.pdf Description: MOSFET N-CH 75V 55A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
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IXTY5N50P IXTY5N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 4.8A TO252
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IXTY64N055T IXTY64N055T IXYS 3c0974e5-0ca4-4ceb-b0dd-e28713c962f8.pdf Description: MOSFET N-CH 55V 64A TO-252
Produkt ist nicht verfügbar
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IXUN280N10 IXUN280N10 IXYS 8a99d869-0e48-4465-90b4-1e4759036527.pdf Description: MOSFET N-CH 100V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 140A, 10V
Power Dissipation (Max): 770W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 440 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Produkt ist nicht verfügbar
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IXUV170N075 IXUV170N075 IXYS Description: MOSFET N-CH 75V 175A PLUS220
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IXUV170N075S IXYS PartDetails.aspx?r=0&pid=1044 Description: MOSFET N-CH 75V 175A PLUS-220SMD
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MCC132-08io1 MCC132-08io1 IXYS media?resourcetype=datasheets&itemid=9c663c26-642a-412e-af3c-b94d94ce5834&filename=Littelfuse-Power-Semiconductors-MCC132-08io1-Datasheet Description: MOD THYRISTOR DUAL 800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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MCC132-12io1 MCC132-12io1 IXYS media?resourcetype=datasheets&itemid=aaea7fdb-ff82-4fbb-903b-d38659ccabfd&filename=Littelfuse-Power-Semiconductors-MCC132-12io1-Datasheet Description: MOD THYRISTOR DUAL 1200V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
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MCC132-18io1 MCC132-18io1 IXYS media?resourcetype=datasheets&itemid=2344da07-6449-4da4-975b-ec6262b6531f&filename=Littelfuse-Power-Semiconductors-MCC132-18io1-Datasheet Description: MOD THYRISTOR DUAL 1800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
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MCC162-08io1 MCC162-08io1 IXYS MCC162-08io1.pdf Description: MOD THYRISTOR DUAL 800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 800 V
auf Bestellung 2 Stücke:
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MCC162-12io1 MCC162-12io1 IXYS media?resourcetype=datasheets&itemid=eb1772ab-1175-4cef-a955-8fb16b13dc74&filename=Littelfuse-Power-Semiconductors-MCC162-12io1-Datasheet Description: MOD THYRISTOR DUAL 1200V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
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IXTQ230N085T 656b52d9-cdd4-4219-a307-549c63aa7915.pdf
IXTQ230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A TO3P
Produkt ist nicht verfügbar
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IXTQ240N055T 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf
IXTQ240N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 240A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ250N075T
IXTQ250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ280N055T
IXTQ280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Power Dissipation (Max): 550W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ40N50Q
IXTQ40N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Box
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTQ96N15P 99131.pdf
IXTQ96N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 96A TO3P
auf Bestellung 390 Stücke:
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IXTR200N10P 99365.pdf
IXTR200N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 120A ISOPLUS247
Produkt ist nicht verfügbar
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IXTT10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTT10N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT10P50 IXTH10P50.pdf
IXTT10P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 10A TO-268
Produkt ist nicht verfügbar
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IXTT10P60 littelfuse_discrete_mosfets_p-channel_ixt_10p60_datasheet.pdf.pdf
IXTT10P60
Hersteller: IXYS
Description: MOSFET P-CH 600V 10A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT16P20
IXTT16P20
Hersteller: IXYS
Description: MOSFET P-CH 200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Supplier Device Package: TO-268AA
Drain to Source Voltage (Vdss): 200 V
Produkt ist nicht verfügbar
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IXTT1N100 98886.pdf
IXTT1N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.5A TO-268
Produkt ist nicht verfügbar
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IXTT20N50D
IXTT20N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT36P10
IXTT36P10
Hersteller: IXYS
Description: MOSFET P-CH 100V 36A TO-268
Produkt ist nicht verfügbar
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IXTT50P085
IXTT50P085
Hersteller: IXYS
Description: MOSFET P-CH 85V 50A TO-268
Produkt ist nicht verfügbar
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IXTT50P10 DS98905E(IXTH-T50P10).pdf
IXTT50P10
Hersteller: IXYS
Description: MOSFET P-CH 100V 50A TO-268
Produkt ist nicht verfügbar
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IXTT52N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf
IXTT52N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT64N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf
IXTT64N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 64A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT69N30P 99078.pdf
IXTT69N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 69A TO-268
Produkt ist nicht verfügbar
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IXTT74N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf
IXTT74N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 74A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT88N15 99034.pdf
IXTT88N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 88A TO-268
Produkt ist nicht verfügbar
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IXTT8P50 94534.pdf
IXTT8P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 8A TO-268
Produkt ist nicht verfügbar
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IXTT96N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf
IXTT96N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.01 EUR
30+10.39 EUR
120+9.29 EUR
Mindestbestellmenge: 2
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IXTT96N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf
IXTT96N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 96A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Produkt ist nicht verfügbar
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IXTU01N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTU01N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO251
Produkt ist nicht verfügbar
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IXTU01N80 98841.pdf
IXTU01N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 100MA TO251
Produkt ist nicht verfügbar
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IXTU02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
IXTU02N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 200MA TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
70+2.12 EUR
140+1.91 EUR
Mindestbestellmenge: 4
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IXTU05N120
IXTU05N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 0.5A TO-251
Produkt ist nicht verfügbar
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IXTU06N120P
IXTU06N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO251
Produkt ist nicht verfügbar
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IXTU1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTU1R4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 1.4A TO251
Produkt ist nicht verfügbar
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IXTU44N10T
IXTU44N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 44A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-251AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar
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IXTU50N085T
IXTU50N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
Produkt ist nicht verfügbar
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IXTU55N075T
IXTU55N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 55A TO-251
Produkt ist nicht verfügbar
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IXTU5N50P DS99446G(IXTU-TY-TA-TP5N50P).pdf
IXTU5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO252
Produkt ist nicht verfügbar
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IXTU64N055T
IXTU64N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 64A TO-251
Produkt ist nicht verfügbar
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IXTV200N10T DS99714A(IXTV200N10T-S).pdf
IXTV200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS220
Produkt ist nicht verfügbar
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IXTV200N10TS DS99714A(IXTV200N10T-S).pdf
IXTV200N10TS
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS220SMD
Produkt ist nicht verfügbar
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IXTV230N085T b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A PLUS220
Produkt ist nicht verfügbar
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IXTV230N085TS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085TS
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTV250N075T c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A PLUS220
Produkt ist nicht verfügbar
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IXTV250N075TS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075TS
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTV280N055T 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A PLUS220
Produkt ist nicht verfügbar
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IXTV280N055TS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055TS
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTX22N100L littelfuse_discrete_mosfets_n-channel_linear_ixt_22n100l_datasheet.pdf.pdf
IXTX22N100L
Hersteller: IXYS
Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+73.97 EUR
10+69.03 EUR
100+59.93 EUR
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IXTY01N80
IXTY01N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 100MA TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
IXTY02N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 3042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.29 EUR
70+2.32 EUR
140+2.20 EUR
560+1.84 EUR
1050+1.72 EUR
2030+1.61 EUR
Mindestbestellmenge: 5
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IXTY1N80 98822.pdf
IXTY1N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 750MA TO-252AA
Produkt ist nicht verfügbar
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IXTY2N80P DS99595F(IXTU-TY-TA-TP2N80P).pdf
IXTY2N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 2A TO252
Produkt ist nicht verfügbar
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IXTY50N085T
IXTY50N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY55N075T littelfuse_discrete_mosfets_n-channel_trench_gate_ixty55n075t_datasheet.pdf.pdf
IXTY55N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 55A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 27.5A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY5N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf
IXTY5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO252
Produkt ist nicht verfügbar
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IXTY64N055T 3c0974e5-0ca4-4ceb-b0dd-e28713c962f8.pdf
IXTY64N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 64A TO-252
Produkt ist nicht verfügbar
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IXUN280N10 8a99d869-0e48-4465-90b4-1e4759036527.pdf
IXUN280N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 280A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 140A, 10V
Power Dissipation (Max): 770W (Tc)
Vgs(th) (Max) @ Id: 4V @ 4mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 440 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Produkt ist nicht verfügbar
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IXUV170N075
IXUV170N075
Hersteller: IXYS
Description: MOSFET N-CH 75V 175A PLUS220
Produkt ist nicht verfügbar
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IXUV170N075S PartDetails.aspx?r=0&pid=1044
Hersteller: IXYS
Description: MOSFET N-CH 75V 175A PLUS-220SMD
Produkt ist nicht verfügbar
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MCC132-08io1 media?resourcetype=datasheets&itemid=9c663c26-642a-412e-af3c-b94d94ce5834&filename=Littelfuse-Power-Semiconductors-MCC132-08io1-Datasheet
MCC132-08io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 800 V
Produkt ist nicht verfügbar
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MCC132-12io1 media?resourcetype=datasheets&itemid=aaea7fdb-ff82-4fbb-903b-d38659ccabfd&filename=Littelfuse-Power-Semiconductors-MCC132-12io1-Datasheet
MCC132-12io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1200V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+99.09 EUR
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MCC132-18io1 media?resourcetype=datasheets&itemid=2344da07-6449-4da4-975b-ec6262b6531f&filename=Littelfuse-Power-Semiconductors-MCC132-18io1-Datasheet
MCC132-18io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 130 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.8 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+90.30 EUR
Mindestbestellmenge: 6
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MCC162-08io1 MCC162-08io1.pdf
MCC162-08io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 800V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 800 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+119.70 EUR
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MCC162-12io1 media?resourcetype=datasheets&itemid=eb1772ab-1175-4cef-a955-8fb16b13dc74&filename=Littelfuse-Power-Semiconductors-MCC162-12io1-Datasheet
MCC162-12io1
Hersteller: IXYS
Description: MOD THYRISTOR DUAL 1200V Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6400A
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 190 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Active
Current - On State (It (RMS)) (Max): 300 A
Voltage - Off State: 1.2 kV
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+104.30 EUR
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