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IXTQ230N085T IXTQ230N085T IXYS 656b52d9-cdd4-4219-a307-549c63aa7915.pdf Description: MOSFET N-CH 85V 230A TO3P
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IXTQ240N055T IXTQ240N055T IXYS 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf Description: MOSFET N-CH 55V 240A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXTQ250N075T IXTQ250N075T IXYS Description: MOSFET N-CH 75V 250A TO3P
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
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IXTQ280N055T IXTQ280N055T IXYS Description: MOSFET N-CH 55V 280A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXTQ40N50Q IXYS Description: MOSFET N-CH 500V 40A TO3P
Packaging: Box
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTQ42N25P IXTQ42N25P IXYS littelfuse-discrete-mosfets-ixt-42n25p-datasheet?assetguid=bee1e89d-6c4a-43b4-9188-2749a5d4fb97 Description: MOSFET N-CH 250V 42A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXTQ44N50P IXTQ44N50P IXYS media?resourcetype=datasheets&itemid=0584BAF2-BE97-46E6-958D-5A943DF9C78B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTQ44N50P-Datasheet.PDF Description: MOSFET N-CH 500V 44A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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IXTQ82N25P IXTQ82N25P IXYS Smart%20Building%20Application%20Guide.pdf Description: MOSFET N-CH 250V 82A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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30+10.91 EUR
120+9.26 EUR
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IXTQ96N15P IXTQ96N15P IXYS 99131.pdf Description: MOSFET N-CH 150V 96A TO3P
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IXTQ96N20P IXTQ96N20P IXYS littelfuse-discrete-mosfets-ixt-96n20p-datasheet?assetguid=f01cf09b-9474-4d8a-b705-45c8df47cc7e Description: MOSFET N-CH 200V 96A TO3P
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
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120+9.26 EUR
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IXTR200N10P IXTR200N10P IXYS 99365.pdf Description: MOSFET N-CH 100V 120A ISOPLUS247
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IXTT10N100D IXTT10N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 10A TO268
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
FET Feature: Depletion Mode
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT10P50 IXTT10P50 IXYS IXTH10P50.pdf Description: MOSFET P-CH 500V 10A TO-268
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IXTT110N10P IXTT110N10P IXYS media?resourcetype=datasheets&itemid=0F3EB351-1967-4127-BCCF-4D28C59BD48F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-110N10P-Datasheet.PDF Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
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IXTT16P20 IXTT16P20 IXYS Description: MOSFET P-CH 200V 16A TO268
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-268AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT1N100 IXTT1N100 IXYS 98886.pdf Description: MOSFET N-CH 1000V 1.5A TO-268
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IXTT20N50D IXYS Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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IXTT24P20 IXTT24P20 IXYS DS98769GIXTHIXTT24P20.pdf Description: MOSFET P-CH 200V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXTT36P10 IXTT36P10 IXYS Description: MOSFET P-CH 100V 36A TO-268
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IXTT50P085 IXYS Description: MOSFET P-CH 85V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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IXTT50P10 IXTT50P10 IXYS DS98905E(IXTH-T50P10).pdf Description: MOSFET P-CH 100V 50A TO-268
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IXTT52N30P IXTT52N30P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT64N25P IXTT64N25P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf Description: MOSFET N-CH 250V 64A TO268
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTT69N30P IXTT69N30P IXYS 99078.pdf Description: MOSFET N-CH 300V 69A TO-268
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IXTT74N20P IXTT74N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 74A TO268
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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IXTT88N15 IXTT88N15 IXYS 99034.pdf Description: MOSFET N-CH 150V 88A TO-268
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IXTT8P50 IXTT8P50 IXYS 94534.pdf Description: MOSFET P-CH 500V 8A TO-268
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IXTT96N15P IXTT96N15P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 96A TO268
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
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IXTT96N20P IXTT96N20P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf Description: MOSFET N-CH 200V 96A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
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IXTU01N100D IXTU01N100D IXYS littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 400MA TO251
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IXTU01N80 IXTU01N80 IXYS 98841.pdf Description: MOSFET N-CH 800V 100MA TO251
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IXTU02N50D IXTU02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Description: MOSFET N-CH 500V 200MA TO251
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
auf Bestellung 356 Stücke:
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IXTU05N120 IXTU05N120 IXYS Description: MOSFET N-CH 1200V 0.5A TO-251
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IXTU06N120P IXTU06N120P IXYS Description: MOSFET N-CH 1200V 600MA TO251
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IXTU1R4N60P IXTU1R4N60P IXYS IXT(P,U,Y)%201R4N60P.pdf Description: MOSFET N-CH 600V 1.4A TO251
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IXTU44N10T IXTU44N10T IXYS Description: MOSFET N-CH 100V 44A TO251
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTU50N085T IXTU50N085T IXYS Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
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IXTU55N075T IXTU55N075T IXYS Description: MOSFET N-CH 75V 55A TO-251
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IXTU5N50P IXTU5N50P IXYS DS99446G(IXTU-TY-TA-TP5N50P).pdf Description: MOSFET N-CH 500V 4.8A TO252
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IXTU64N055T IXTU64N055T IXYS Description: MOSFET N-CH 55V 64A TO-251
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IXTV200N10T IXTV200N10T IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220
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IXTV200N10TS IXTV200N10TS IXYS DS99714A(IXTV200N10T-S).pdf Description: MOSFET N-CH 100V 200A PLUS220SMD
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IXTV230N085T IXTV230N085T IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS220
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IXTV230N085TS IXTV230N085TS IXYS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf Description: MOSFET N-CH 85V 230A PLUS-220SMD
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IXTV250N075T IXTV250N075T IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS220
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IXTV250N075TS IXTV250N075TS IXYS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf Description: MOSFET N-CH 75V 250A PLUS-220SMD
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IXTV280N055T IXTV280N055T IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS220
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IXTV280N055TS IXTV280N055TS IXYS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf Description: MOSFET N-CH 55V 280A PLUS-220SMD
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IXTX22N100L IXTX22N100L IXYS DS99293DIXTKTX22N100L.pdf Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
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IXTX24N100 IXTX24N100 IXYS littelfuse-discrete-mosfets-ixtx24n100-datasheet?assetguid=6aa7e64b-5d5e-45de-99db-8d8811a55ece Description: MOSFET N-CH 1000V 24A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
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IXTY01N80 IXTY01N80 IXYS Description: MOSFET N-CH 800V 100MA TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IXTY02N50D IXTY02N50D IXYS littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5 Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 168 Stücke:
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4+5.38 EUR
70+2.55 EUR
140+2.31 EUR
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IXTY1N80 IXTY1N80 IXYS 98822.pdf Description: MOSFET N-CH 800V 750MA TO-252AA
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IXTY2N80P IXTY2N80P IXYS DS99595F(IXTU-TY-TA-TP2N80P).pdf Description: MOSFET N-CH 800V 2A TO252
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IXTY50N085T IXTY50N085T IXYS Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IXTY55N075T IXTY55N075T IXYS media?resourcetype=datasheets&itemid=0033EB38-F739-4617-9273-91022ACD6E35&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTY55N075T-Datasheet.PDF Description: MOSFET N-CH 75V 55A TO252
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 25µA
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IXTY5N50P IXTY5N50P IXYS littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 4.8A TO252
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IXTY64N055T IXTY64N055T IXYS 3c0974e5-0ca4-4ceb-b0dd-e28713c962f8.pdf Description: MOSFET N-CH 55V 64A TO-252
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IXUN280N10 IXUN280N10 IXYS 8a99d869-0e48-4465-90b4-1e4759036527.pdf Description: MOSFET N-CH 100V 280A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 440 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 770W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
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IXUV170N075 IXUV170N075 IXYS Description: MOSFET N-CH 75V 175A PLUS220
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IXTQ230N085T 656b52d9-cdd4-4219-a307-549c63aa7915.pdf
IXTQ230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A TO3P
Produkt ist nicht verfügbar
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IXTQ240N055T 51abd158-5540-4eba-b7c7-c2a768f073d0.pdf
IXTQ240N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 240A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ250N075T
IXTQ250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A TO3P
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
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IXTQ280N055T
IXTQ280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 550W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ40N50Q
Hersteller: IXYS
Description: MOSFET N-CH 500V 40A TO3P
Packaging: Box
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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IXTQ42N25P littelfuse-discrete-mosfets-ixt-42n25p-datasheet?assetguid=bee1e89d-6c4a-43b4-9188-2749a5d4fb97
IXTQ42N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 42A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 280 Stücke:
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AnzahlPrivatkunde
2+11.39 EUR
30+6.49 EUR
120+5.4 EUR
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IXTQ44N50P media?resourcetype=datasheets&itemid=0584BAF2-BE97-46E6-958D-5A943DF9C78B&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXTQ44N50P-Datasheet.PDF
IXTQ44N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 44A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 5440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 658W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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IXTQ82N25P Smart%20Building%20Application%20Guide.pdf
IXTQ82N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 82A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 41A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.41 EUR
30+10.91 EUR
120+9.26 EUR
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IXTQ96N15P 99131.pdf
IXTQ96N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 96A TO3P
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IXTQ96N20P littelfuse-discrete-mosfets-ixt-96n20p-datasheet?assetguid=f01cf09b-9474-4d8a-b705-45c8df47cc7e
IXTQ96N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 96A TO3P
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
auf Bestellung 279 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.41 EUR
30+10.91 EUR
120+9.26 EUR
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IXTR200N10P 99365.pdf
IXTR200N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 120A ISOPLUS247
Produkt ist nicht verfügbar
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IXTT10N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_10n100d_datasheet.pdf.pdf
IXTT10N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 10A TO268
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 400W (Tc)
FET Feature: Depletion Mode
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT10P50 IXTH10P50.pdf
IXTT10P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 10A TO-268
Produkt ist nicht verfügbar
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IXTT110N10P media?resourcetype=datasheets&itemid=0F3EB351-1967-4127-BCCF-4D28C59BD48F&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Standard-IXT-110N10P-Datasheet.PDF
IXTT110N10P
Hersteller: IXYS
Description: MOSFET N-CH 100V 110A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 500mA, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT16P20
IXTT16P20
Hersteller: IXYS
Description: MOSFET P-CH 200V 16A TO268
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-268AA
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT1N100 98886.pdf
IXTT1N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 1.5A TO-268
Produkt ist nicht verfügbar
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IXTT20N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 20A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 10A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT24P20 DS98769GIXTHIXTT24P20.pdf
IXTT24P20
Hersteller: IXYS
Description: MOSFET P-CH 200V 24A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 500mA, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+29.24 EUR
30+17.9 EUR
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IXTT36P10
IXTT36P10
Hersteller: IXYS
Description: MOSFET P-CH 100V 36A TO-268
Produkt ist nicht verfügbar
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IXTT50P085
Hersteller: IXYS
Description: MOSFET P-CH 85V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
Produkt ist nicht verfügbar
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IXTT50P10 DS98905E(IXTH-T50P10).pdf
IXTT50P10
Hersteller: IXYS
Description: MOSFET P-CH 100V 50A TO-268
Produkt ist nicht verfügbar
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IXTT52N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_52n30p_datasheet.pdf.pdf
IXTT52N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 52A TO268
Input Capacitance (Ciss) (Max) @ Vds: 3490 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT64N25P littelfuse_discrete_mosfets_n-channel_standard_ixt_64n25p_datasheet.pdf.pdf
IXTT64N25P
Hersteller: IXYS
Description: MOSFET N-CH 250V 64A TO268
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTT69N30P 99078.pdf
IXTT69N30P
Hersteller: IXYS
Description: MOSFET N-CH 300V 69A TO-268
Produkt ist nicht verfügbar
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IXTT74N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_74n20p_datasheet.pdf.pdf
IXTT74N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 74A TO268
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 37A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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IXTT88N15 99034.pdf
IXTT88N15
Hersteller: IXYS
Description: MOSFET N-CH 150V 88A TO-268
Produkt ist nicht verfügbar
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IXTT8P50 94534.pdf
IXTT8P50
Hersteller: IXYS
Description: MOSFET P-CH 500V 8A TO-268
Produkt ist nicht verfügbar
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IXTT96N15P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n15p_datasheet.pdf.pdf
IXTT96N15P
Hersteller: IXYS
Description: MOSFET N-CH 150V 96A TO268
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 480W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.48 EUR
30+12.36 EUR
120+11.06 EUR
Mindestbestellmenge: 2 Stücke
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IXTT96N20P littelfuse_discrete_mosfets_n-channel_standard_ixt_96n20p_datasheet.pdf.pdf
IXTT96N20P
Hersteller: IXYS
Description: MOSFET N-CH 200V 96A TO268
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 600W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTU01N100D littelfuse_discrete_mosfets_n-channel_depletion_mode_ixt_01n100d_datasheet.pdf.pdf
IXTU01N100D
Hersteller: IXYS
Description: MOSFET N-CH 1000V 400MA TO251
Produkt ist nicht verfügbar
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IXTU01N80 98841.pdf
IXTU01N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 100MA TO251
Produkt ist nicht verfügbar
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IXTU02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
IXTU02N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 200MA TO251
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 5V @ 25µA
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel, Depletion Mode
auf Bestellung 356 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.4 EUR
70+2.52 EUR
140+2.27 EUR
Mindestbestellmenge: 4 Stücke
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IXTU05N120
IXTU05N120
Hersteller: IXYS
Description: MOSFET N-CH 1200V 0.5A TO-251
Produkt ist nicht verfügbar
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IXTU06N120P
IXTU06N120P
Hersteller: IXYS
Description: MOSFET N-CH 1200V 600MA TO251
Produkt ist nicht verfügbar
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IXTU1R4N60P IXT(P,U,Y)%201R4N60P.pdf
IXTU1R4N60P
Hersteller: IXYS
Description: MOSFET N-CH 600V 1.4A TO251
Produkt ist nicht verfügbar
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IXTU44N10T
IXTU44N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 44A TO251
Drain to Source Voltage (Vdss): 100 V
Part Status: Obsolete
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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IXTU50N085T
IXTU50N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 50A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-251AA
Drain to Source Voltage (Vdss): 85 V
Produkt ist nicht verfügbar
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IXTU55N075T
IXTU55N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 55A TO-251
Produkt ist nicht verfügbar
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IXTU5N50P DS99446G(IXTU-TY-TA-TP5N50P).pdf
IXTU5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO252
Produkt ist nicht verfügbar
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IXTU64N055T
IXTU64N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 64A TO-251
Produkt ist nicht verfügbar
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IXTV200N10T DS99714A(IXTV200N10T-S).pdf
IXTV200N10T
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS220
Produkt ist nicht verfügbar
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IXTV200N10TS DS99714A(IXTV200N10T-S).pdf
IXTV200N10TS
Hersteller: IXYS
Description: MOSFET N-CH 100V 200A PLUS220SMD
Produkt ist nicht verfügbar
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IXTV230N085T b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A PLUS220
Produkt ist nicht verfügbar
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IXTV230N085TS b45fb52d-f2a5-4237-a04b-a87d0203d941.pdf
IXTV230N085TS
Hersteller: IXYS
Description: MOSFET N-CH 85V 230A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTV250N075T c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A PLUS220
Produkt ist nicht verfügbar
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IXTV250N075TS c0d722eb-2d30-4166-92f7-05bc626aaf18.pdf
IXTV250N075TS
Hersteller: IXYS
Description: MOSFET N-CH 75V 250A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTV280N055T 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A PLUS220
Produkt ist nicht verfügbar
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IXTV280N055TS 8d18b55e-5b6a-4143-9d5e-c07c7fe1e64a.pdf
IXTV280N055TS
Hersteller: IXYS
Description: MOSFET N-CH 55V 280A PLUS-220SMD
Produkt ist nicht verfügbar
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IXTX22N100L DS99293DIXTKTX22N100L.pdf
IXTX22N100L
Hersteller: IXYS
Description: MOSFET N-CH 1000V 22A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
Power Dissipation (Max): 700W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
Produkt ist nicht verfügbar
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IXTX24N100 littelfuse-discrete-mosfets-ixtx24n100-datasheet?assetguid=6aa7e64b-5d5e-45de-99db-8d8811a55ece
IXTX24N100
Hersteller: IXYS
Description: MOSFET N-CH 1000V 24A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 12A, 10V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY01N80
IXTY01N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 100MA TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 25µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 50Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IXTY02N50D littelfuse-discrete-mosfets-ixt-02n50d-datasheet?assetguid=034fffd1-528e-4165-a830-650adaa583e5
IXTY02N50D
Hersteller: IXYS
Description: MOSFET N-CH 500V 200MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
Rds On (Max) @ Id, Vgs: 30Ohm @ 50mA, 0V
Power Dissipation (Max): 1.1W (Ta), 25W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 25 V
auf Bestellung 168 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
70+2.55 EUR
140+2.31 EUR
Mindestbestellmenge: 4 Stücke
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IXTY1N80 98822.pdf
IXTY1N80
Hersteller: IXYS
Description: MOSFET N-CH 800V 750MA TO-252AA
Produkt ist nicht verfügbar
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IXTY2N80P DS99595F(IXTU-TY-TA-TP2N80P).pdf
IXTY2N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 2A TO252
Produkt ist nicht verfügbar
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IXTY50N085T
IXTY50N085T
Hersteller: IXYS
Description: MOSFET N-CH 85V 50A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Produkt ist nicht verfügbar
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IXTY55N075T media?resourcetype=datasheets&itemid=0033EB38-F739-4617-9273-91022ACD6E35&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXTY55N075T-Datasheet.PDF
IXTY55N075T
Hersteller: IXYS
Description: MOSFET N-CH 75V 55A TO252
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 25µA
Produkt ist nicht verfügbar
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IXTY5N50P littelfuse_discrete_mosfets_n-channel_standard_ixt_5n50p_datasheet.pdf.pdf
IXTY5N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 4.8A TO252
Produkt ist nicht verfügbar
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IXTY64N055T 3c0974e5-0ca4-4ceb-b0dd-e28713c962f8.pdf
IXTY64N055T
Hersteller: IXYS
Description: MOSFET N-CH 55V 64A TO-252
Produkt ist nicht verfügbar
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IXUN280N10 8a99d869-0e48-4465-90b4-1e4759036527.pdf
IXUN280N10
Hersteller: IXYS
Description: MOSFET N-CH 100V 280A SOT-227B
Input Capacitance (Ciss) (Max) @ Vds: 18000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 440 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-227B
Vgs(th) (Max) @ Id: 4V @ 4mA
Power Dissipation (Max): 770W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 140A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar
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IXUV170N075
IXUV170N075
Hersteller: IXYS
Description: MOSFET N-CH 75V 175A PLUS220
Produkt ist nicht verfügbar
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