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NVMFS6H864NT1GON SemiconductorTrans MOSFET N-CH 80V 6.7A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NT1GONSEMIDescription: ONSEMI - NVMFS6H864NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 21 A, 0.0269 ohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 21A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 33W
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: DFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0269ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.0269ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 1448 Stücke:
Lieferzeit 14-21 Tag (e)
103+2.45 EUR
162+1.44 EUR
240+0.89 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 103 Stücke
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NVMFS6H864NT1GON SemiconductorMOSFET T8 80V SO8FL
auf Bestellung 2793 Stücke:
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NVMFS6H864NT1GonsemiDescription: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.83 EUR
3000+0.73 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H864NT1GON SemiconductorTrans MOSFET N-CH 80V 6.7A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS6H864NT1GONSEMIDescription: ONSEMI - NVMFS6H864NT1G - Leistungs-MOSFET, n-Kanal, 80 V, 21 A, 0.032 ohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 21A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 33W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.032ohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 1428 Stücke:
Lieferzeit 14-21 Tag (e)
75+3.34 EUR
123+1.9 EUR
182+1.18 EUR
500+0.88 EUR
1000+0.84 EUR
Mindestbestellmenge: 75 Stücke
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NVMFS6H864NWFT1GonsemiDescription: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 52500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.82 EUR
3000+0.73 EUR
4500+0.71 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H864NWFT1GON SemiconductorTrans MOSFET N-CH 80V 6.7A Automotive AEC-Q101 5-Pin SO-FL EP T/R
auf Bestellung 52500 Stücke:
Lieferzeit 14-21 Tag (e)
1500+0.64 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS6H864NWFT1GonsemiMOSFET T8 80V SO8FL
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.14 EUR
10+1.92 EUR
100+1.49 EUR
500+1.23 EUR
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NVMFS6H864NWFT1GonsemiDescription: MOSFET N-CH 80V 6.7A/21A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 53920 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.84 EUR
12+1.78 EUR
100+1.2 EUR
500+0.96 EUR
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NVMFS6H864NWFT1GON SemiconductorTrans MOSFET N-CH 80V 6.7A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS9D6P04M8LT1GonsemiDescription: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.05 EUR
3000+1.01 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFS9D6P04M8LT1GonsemiDescription: MV8 P-CH 40V SO-8FL PORTFOLIO EX
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.1A (Ta), 77A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 580µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14.47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2002 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.67 EUR
10+2.27 EUR
25+1.92 EUR
100+1.51 EUR
250+1.31 EUR
500+1.19 EUR
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NVMFS9D6P04M8LT1GonsemiMOSFETs MV8 P-CH 40V SO-8FL PORTFOLIO EXPANSION
auf Bestellung 2159 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.23 EUR
10+1.45 EUR
100+1.2 EUR
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NVMFSC0D9N04CONSEMIDescription: ONSEMI - NVMFSC0D9N04C - Leistungs-MOSFET, n-Kanal, 40 V, 313 A, 870 µohm, PQFN, Oberflächenmontage
tariffCode: 85415000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 313A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 166W
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PQFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: DUAL COOL
productTraceability: No
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 690µohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 870µohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 5914 Stücke:
Lieferzeit 14-21 Tag (e)
100+6.15 EUR
500+5.55 EUR
1000+5.2 EUR
Mindestbestellmenge: 100 Stücke
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NVMFSC0D9N04CON SemiconductorDescription: 40V T6 SL IN 5X6 DUALCOOL
Produkt ist nicht verfügbar
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NVMFSC0D9N04ConsemiMOSFETs 40V T6 SL IN 5X6 DUALCOOL
auf Bestellung 2801 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.07 EUR
10+8.13 EUR
100+5.81 EUR
500+5.68 EUR
1000+5.53 EUR
3000+5.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFSC0D9N04CONSEMIDescription: ONSEMI - NVMFSC0D9N04C - Leistungs-MOSFET, n-Kanal, 40 V, 313 A, 690 µohm, PQFN, Oberflächenmontage
tariffCode: 85415000
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 313A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.5V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: DUAL COOL
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 690µohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 5914 Stücke:
Lieferzeit 14-21 Tag (e)
21+12.04 EUR
29+8.01 EUR
100+6.15 EUR
500+5.55 EUR
1000+5.2 EUR
Mindestbestellmenge: 21 Stücke
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NVMFSC0D9N04CON SemiconductorTrans MOSFET N-CH 40V 48.9A Automotive 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMFSC0D9N04CON SemiconductorDescription: MOSFET N-CH 40V 48.9A/313A 8DFN
Produkt ist nicht verfügbar
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NVMFSC0D9N04CLonsemiDescription: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.14 EUR
10+8.51 EUR
100+6.89 EUR
500+6.13 EUR
1000+5.25 EUR
Mindestbestellmenge: 3 Stücke
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NVMFSC0D9N04CLonsemiMOSFETs 40V T6 LL IN 5X6 DUALCOOL
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.48 EUR
10+7.02 EUR
100+5.24 EUR
500+4.99 EUR
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NVMFSC0D9N04CLON SemiconductorTrans MOSFET N-CH 40V 50A Automotive 8-Pin DFN EP Reel
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMFSC0D9N04CLonsemiDescription: MOSFET N-CH 40V 50A/316A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 316A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6.15)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.74 EUR
Mindestbestellmenge: 3000 Stücke
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NVMFSC1D6N06CLONSEMIDescription: ONSEMI - NVMFSC1D6N06CL - Leistungs-MOSFET, n-Kanal, 60 V, 224 A, 1250 µohm, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 224A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PQFN
Anzahl der Pins: 8Pin(s)
Produktpalette: DUAL COOL
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1250µohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
17+15.57 EUR
20+12.11 EUR
24+9 EUR
50+8.48 EUR
100+7.97 EUR
250+7.82 EUR
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NVMFSC1D6N06CLON SemiconductorDescription: 60V T6 LL IN 5X6 DUALCOOL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFSC1D6N06CLONN
auf Bestellung 2626 Stücke:
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NVMFSC1D6N06CLON SemiconductorDescription: 60V T6 LL IN 5X6 DUALCOOL
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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NVMFSC1D6N06CLonsemiMOSFETs 60V T6 LL IN 5X6 DUALCOOL
auf Bestellung 1855 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.92 EUR
10+8.59 EUR
100+7.2 EUR
500+7.16 EUR
1000+6.68 EUR
3000+6.15 EUR
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NVMFSC1D6N06CLONSEMIDescription: ONSEMI - NVMFSC1D6N06CL - Leistungs-MOSFET, n-Kanal, 60 V, 224 A, 1250 µohm, PQFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 224A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
usEccn: EAR99
Verlustleistung Pd: 166W
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 166W
Bauform - Transistor: PQFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 8Pin(s)
Produktpalette: DUAL COOL
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.00125ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1250µohm
SVHC: Lead (27-Jun-2024)
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
17+15.57 EUR
20+12.11 EUR
24+9 EUR
50+8.48 EUR
100+7.97 EUR
250+7.82 EUR
Mindestbestellmenge: 17 Stücke
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NVMFSW6D1N08HT1GonsemiDescription: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.14 EUR
10+2.57 EUR
100+2 EUR
500+1.7 EUR
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NVMFSW6D1N08HT1GonsemiMOSFETs T8 80V 1 PART PROLI FERATI
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.01 EUR
10+2.31 EUR
100+1.64 EUR
500+1.31 EUR
1000+1.07 EUR
1500+1.06 EUR
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NVMFSW6D1N08HT1GonsemiDescription: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
auf Bestellung 33000 Stücke:
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NVMFSW6D1N08HT1GonsemiDescription: MOSFET N-CH 80V 17A/89A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 3.8W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 40 V
Produkt ist nicht verfügbar
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NVMFWD010N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 84W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1500 Stücke:
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4+5.84 EUR
10+3.8 EUR
100+2.64 EUR
500+2.24 EUR
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NVMFWD010N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 3V @ 97µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 17A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta), 61A (Tc)
Drain to Source Voltage (Vdss): 100V
Power - Max: 3.1W (Ta), 84W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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1500+1.9 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFWD010N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1500 Stücke:
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1+5.81 EUR
10+3.8 EUR
100+2.64 EUR
500+2.24 EUR
1000+2.09 EUR
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NVMFWD016N06CT1GonsemiDescription: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1380 Stücke:
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4+6.24 EUR
10+4.06 EUR
100+2.82 EUR
500+2.28 EUR
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NVMFWD016N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
Produkt ist nicht verfügbar
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NVMFWD016N06CT1GonsemiDescription: MOSFET 2N-CH 60V 9A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 6.9nC @ 10V
Rds On (Max) @ Id, Vgs: 16.3mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 489pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 32A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 3.1W (Ta), 36W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFWD020N06CT1GonsemiDescription: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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1500+1.73 EUR
3000+1.65 EUR
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NVMFWD020N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
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1+5.87 EUR
10+3.81 EUR
100+2.64 EUR
500+2.14 EUR
1000+1.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD020N06CT1GonsemiDescription: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
10+3.49 EUR
100+2.42 EUR
500+2.02 EUR
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NVMFWD020N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 54W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V
Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Configuration: 2 N-Channel
auf Bestellung 1500 Stücke:
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1500+1.27 EUR
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NVMFWD020N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1400 Stücke:
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1+4.5 EUR
10+2.89 EUR
100+1.98 EUR
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NVMFWD020N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 54W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V
Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+2.65 EUR
100+1.81 EUR
500+1.44 EUR
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NVMFWD024N06CT1GonsemiDescription: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
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4+5.82 EUR
10+3.77 EUR
100+2.61 EUR
500+2.11 EUR
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NVMFWD024N06CT1GONSEMICategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 24A; Idm: 85A; 14W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 85A
Power dissipation: 14W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWD024N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.71 EUR
10+3.71 EUR
100+2.56 EUR
500+2.07 EUR
1000+1.86 EUR
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NVMFWD024N06CT1GonsemiDescription: MOSFET 2N-CH 60V 8A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 28W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 30V
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFWD027N10MCLT1GonsemiDescription: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
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1500+1.17 EUR
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NVMFWD027N10MCLT1GonsemiDescription: DUAL N-CHANNEL POWER MOSFET100 V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 46W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 28A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 50V
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
13+1.73 EUR
25+1.56 EUR
100+1.38 EUR
250+1.3 EUR
500+1.25 EUR
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NVMFWD027N10MCLT1GonsemiMOSFETs Dual N-Channel Power MOSFET 100 V, 28 A, 26 mohm Wettable Flank option
auf Bestellung 1050 Stücke:
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2+2.37 EUR
10+1.71 EUR
100+1.38 EUR
500+1.24 EUR
1500+1.14 EUR
3000+1.07 EUR
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NVMFWD030N06CT1GonsemiDescription: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7470 Stücke:
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4+5.57 EUR
10+3.62 EUR
100+2.49 EUR
500+2.01 EUR
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NVMFWD030N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
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1+5.11 EUR
10+3.31 EUR
100+2.28 EUR
500+1.89 EUR
1000+1.75 EUR
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NVMFWD030N06CT1GonsemiDescription: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.65 EUR
3000+1.56 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFWD040N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.01 EUR
3000+0.94 EUR
4500+0.9 EUR
7500+0.88 EUR
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NVMFWD040N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1500 Stücke:
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1+3.67 EUR
10+2.34 EUR
100+1.57 EUR
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NVMFWD040N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 36W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 21A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 50V
Rds On (Max) @ Id, Vgs: 39mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.44 EUR
10+2.18 EUR
100+1.46 EUR
500+1.17 EUR
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NVMFWS002N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS002N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL HE
auf Bestellung 1529 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.16 EUR
10+5.38 EUR
100+3.8 EUR
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NVMFWS002N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 3V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1GonsemiDescription: PTNG 100V STD SO8FL HE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.07 EUR
10+5.32 EUR
100+3.75 EUR
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NVMFWS003N10MCT1GonsemiMOSFETs PTNG 100V STD SO8FL HE
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.16 EUR
10+5.38 EUR
100+3.8 EUR
500+3.39 EUR
1000+3.25 EUR
1500+3.01 EUR
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NVMFWS003N10MCT1GonsemiDescription: PTNG 100V STD SO8FL HE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 194W (Tc)
Vgs(th) (Max) @ Id: 4V @ 351µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS003N10MCT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 169A; Idm: 900A; 97W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 169A
Pulsed drain current: 900A
Power dissipation: 97W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS003P03P8ZT1GonsemiDescription: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.07 EUR
10+3.96 EUR
100+2.75 EUR
500+2.24 EUR
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NVMFWS003P03P8ZT1GonsemiDescription: PFET SO8FL -30V 3MO
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
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1500+2 EUR
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NVMFWS004N04XMT1GonsemiMOSFETs 40V T10M IN S08FL PACKAGE
auf Bestellung 1425 Stücke:
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2+3.06 EUR
10+1.95 EUR
100+1.3 EUR
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NVMFWS004N10MCT1GonsemiMOSFETs PTNG 100V STD SO8FL
auf Bestellung 774 Stücke:
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1+6.89 EUR
10+4.5 EUR
100+3.17 EUR
500+2.57 EUR
1000+2.39 EUR
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NVMFWS004N10MCT1GonsemiDescription: MOSFET N-CH 100V 5DFN
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 3.8W (Ta), 164W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc)
FET Type: N-Channel
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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NVMFWS005N10MCLT1GON SemiconductorTrans MOSFET N-CH 100V 18.4A Automotive 5-Pin DFNW EP T/R
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NVMFWS005N10MCLT1GonsemiMOSFETs MOSFET - Power, Single, N-Channel100 V, 5.1 mohm, 108A Wettable flank option.
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.05 EUR
10+3.27 EUR
100+2.26 EUR
500+1.86 EUR
1000+1.59 EUR
1500+1.56 EUR
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NVMFWS005N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 192µA
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1500 Stücke:
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1500+1.71 EUR
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NVMFWS005N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 1800 Stücke:
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4+5.43 EUR
10+3.51 EUR
100+2.42 EUR
500+1.95 EUR
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NVMFWS014N08XT1GonsemiDescription: POWERTRENCH T10 80V 13.8 M SO-8F
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: SO-8FL
Vgs(th) (Max) @ Id: 3.6V @ 32µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
auf Bestellung 1460 Stücke:
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11+1.99 EUR
17+1.24 EUR
100+0.81 EUR
500+0.63 EUR
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NVMFWS014N08XT1GonsemiDescription: POWERTRENCH T10 80V 13.8 M SO-8F
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: SO-8FL
Vgs(th) (Max) @ Id: 3.6V @ 32µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFWS014N08XT1GonsemiMOSFETs T10 80V SG SO8FL PWF
auf Bestellung 1840 Stücke:
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2+2 EUR
10+1.25 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.55 EUR
1500+0.5 EUR
3000+0.48 EUR
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NVMFWS014P04M8LT1GonsemiMOSFETs MV8 40V P-CH LL IN S08FL PACKAGE
auf Bestellung 17401 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.92 EUR
10+1.59 EUR
100+1.14 EUR
500+0.93 EUR
1000+0.77 EUR
1500+0.76 EUR
3000+0.74 EUR
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NVMFWS014P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 1222 Stücke:
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15+1.49 EUR
100+1.15 EUR
500+0.99 EUR
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NVMFWS014P04M8LT1GON SemiconductorTrans MOSFET P-CH 40V 12.5A Automotive AEC-Q101 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
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NVMFWS014P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFWS015N10MCLT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFWS015N10MCLT1GonsemiDescription: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 309 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.53 EUR
10+2.25 EUR
100+1.51 EUR
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NVMFWS015N10MCLT1GonsemiMOSFETs PTNG 100V LL NCH SO-8FL WETTABLE FLANK FOR AUTOMOTIVE MARKET
auf Bestellung 15000 Stücke:
Lieferzeit 360-364 Tag (e)
1+4.14 EUR
10+2.59 EUR
100+1.71 EUR
500+1.36 EUR
1000+1.2 EUR
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NVMFWS015N10MCLT1GonsemiDescription: PTNG 100V LL NCH SO-8FL WETTABLE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 77µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS016N06CT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Produkt ist nicht verfügbar
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NVMFWS016N06CT1GonsemiDescription: MOSFET N-CH 60V 10A/33A 5DFN
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.26 EUR
3000+1.18 EUR
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NVMFWS016N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
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NVMFWS016N06CT1GonsemiDescription: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:
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10+2.84 EUR
100+1.93 EUR
500+1.55 EUR
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NVMFWS016N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL
auf Bestellung 1500 Stücke:
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2+3.28 EUR
10+2.09 EUR
100+1.39 EUR
500+1.09 EUR
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1500+0.87 EUR
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NVMFWS016N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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NVMFWS016N10MCLT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS016N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 7475 Stücke:
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NVMFWS020N06CT1GonsemiDescription: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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10+2.56 EUR
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NVMFWS020N06CT1GonsemiDescription: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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1500+1.13 EUR
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NVMFWS020N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
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10+2.57 EUR
100+1.74 EUR
500+1.38 EUR
1000+1.15 EUR
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NVMFWS021N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL
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NVMFWS021N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFWS024N06CT1GonsemiDescription: T6 60V SG HIGHER RDS-ON PORTFOLI
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.98 EUR
3000+0.9 EUR
Mindestbestellmenge: 1500 Stücke
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