Produkte > HP8

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
HP8Amphenol FCIAmphenol
Produkt ist nicht verfügbar
HP8-ZH-BPL5RSCC Aerospace & DefenseWIRE: INSULATED ELECTRIC CONDUCTOR Of copper not fitted with connectors
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)
100+18.62 EUR
500+ 14.18 EUR
Mindestbestellmenge: 100
HP802HUAYAMICRO08+
auf Bestellung 13 Stücke:
Lieferzeit 21-28 Tag (e)
HP804HUAYA MICRO2008
auf Bestellung 9930 Stücke:
Lieferzeit 21-28 Tag (e)
HP8060-9RGBel Power SolutionsDescription: POWER SUPPLYHP8060-9RGDC-DCIN 16
Produkt ist nicht verfügbar
HP8060-9RGBel Power SolutionsSwitching Power Supplies 187W 16.8-137.5Vi 5.1/24/24Vo 12/2.5A
Produkt ist nicht verfügbar
HP8060-9RGBel Power SolutionsHP8060-9RG
Produkt ist nicht verfügbar
HP8120AHENWOOD0106+
auf Bestellung 127 Stücke:
Lieferzeit 21-28 Tag (e)
HP8126AHENWOOD0136+
auf Bestellung 11365 Stücke:
Lieferzeit 21-28 Tag (e)
HP8127AHENWOOD2002
auf Bestellung 6220 Stücke:
Lieferzeit 21-28 Tag (e)
HP8128AHENWOOD2002
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
HP820PORTASOLCategory: Gas soldering irons & torches
Description: Burner: gas; 820W; 1350°C; 30min; piezoelectric lighter
Type of burner: gas
Kind of gas: butane
Power: 820W
Flame temperature: 1350°C
Applications of soldering equipment: for heat shrinking; for singeing
Height: 133mm
Soldering equipment features: flame adjustment; igniter lock; piezoelectric lighter; possibility to fix on a stand; sight-glass for gas level indication in the bottle; standard refilling valve
Standard equipment: stand
Nominal life: 30min
Produkt ist nicht verfügbar
HP820PORTASOLCategory: Gas soldering irons & torches
Description: Burner: gas; 820W; 1350°C; 30min; piezoelectric lighter
Type of burner: gas
Kind of gas: butane
Power: 820W
Flame temperature: 1350°C
Applications of soldering equipment: for heat shrinking; for singeing
Height: 133mm
Soldering equipment features: flame adjustment; igniter lock; piezoelectric lighter; possibility to fix on a stand; sight-glass for gas level indication in the bottle; standard refilling valve
Standard equipment: stand
Nominal life: 30min
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
HP8210PRO ELECDescription: PRO ELEC - HP8210 - Steckverbinder-Adapter, Kaltgerätestecker (IEC 60320 C14), 1 -polig, Stecker
tariffCode: 85369010
productTraceability: No
Zielpositionen: 2Ways
rohsCompliant: YES
Ausführung Zielsteckverbinder: Buchse
Steckverbinder zwischen versch. Baureihen B: Kaltgerätebuchse (IEC C13), x2
euEccn: NLR
Steckverbinder zwischen versch. Baureihen A: Kaltgerätestecker (IEC 60320 C14)
hazardous: false
rohsPhthalatesCompliant: TBA
Ausführung Ausgangssteckverbinder: Stecker
Ausgangspositionen: 1Ways
usEccn: EAR99
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
HP838H8NibcoDescription: S585HP66LF-HC 3/4 SLD X 3/4 HOSE
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
HP840X8NibcoDescription: PC-585HP-LF 3/4 PRESS BALL VALVE
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
HP843X8NibcoDescription: PC585HPLF-HC 3/4 PRESS X 3/4 HOS
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
HP8K
auf Bestellung 7820 Stücke:
Lieferzeit 21-28 Tag (e)
HP8K22TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 27A/57A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 57A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
auf Bestellung 9532 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.15 EUR
11+ 2.57 EUR
100+ 2 EUR
500+ 1.7 EUR
1000+ 1.38 EUR
Mindestbestellmenge: 9
HP8K22TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
132+1.2 EUR
250+ 1.11 EUR
500+ 1.03 EUR
1000+ 0.96 EUR
2500+ 0.89 EUR
Mindestbestellmenge: 132
HP8K22TBROHM SemiconductorMOSFET 30V Nch+Nch Si MOSFET
auf Bestellung 30379 Stücke:
Lieferzeit 14-28 Tag (e)
17+3.15 EUR
21+ 2.59 EUR
100+ 2.02 EUR
500+ 1.71 EUR
1000+ 1.39 EUR
2500+ 1.25 EUR
5000+ 1.24 EUR
Mindestbestellmenge: 17
HP8K22TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 27A/57A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 57A
Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 15V
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.3 EUR
5000+ 1.24 EUR
Mindestbestellmenge: 2500
HP8K22TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
132+1.2 EUR
250+ 1.11 EUR
Mindestbestellmenge: 132
HP8K22TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/57A 8-Pin HSOP EP T/R
auf Bestellung 2445 Stücke:
Lieferzeit 14-21 Tag (e)
252+0.63 EUR
261+ 0.58 EUR
265+ 0.56 EUR
500+ 0.52 EUR
1000+ 0.5 EUR
Mindestbestellmenge: 252
HP8K24ROHM SemiconductorMOSFET
Produkt ist nicht verfügbar
HP8K24TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
115+1.38 EUR
120+ 1.27 EUR
250+ 1.18 EUR
500+ 1.09 EUR
1000+ 1.01 EUR
2500+ 0.94 EUR
5000+ 0.88 EUR
Mindestbestellmenge: 115
HP8K24TBROHMDescription: ROHM - HP8K24TB - Dual-MOSFET, n-Kanal, 30 V, 27 A, 0.0067 ohm, HSOP, Oberflächenmontage
SVHC: No SVHC (10-Jun-2022)
Produkt ist nicht verfügbar
HP8K24TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 15A/27A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
auf Bestellung 9480 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.8 EUR
10+ 3.11 EUR
100+ 2.42 EUR
500+ 2.05 EUR
1000+ 1.67 EUR
Mindestbestellmenge: 7
HP8K24TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R
auf Bestellung 2290 Stücke:
Lieferzeit 14-21 Tag (e)
115+1.38 EUR
120+ 1.27 EUR
250+ 1.18 EUR
500+ 1.09 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 115
HP8K24TBROHMDescription: ROHM - HP8K24TB - Dual-MOSFET, n-Kanal, 30 V, 27 A, 0.0067 ohm, HSOP, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30
Dauer-Drainstrom Id: 27
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 3
Gate-Source-Schwellenspannung, max.: 2.5
Bauform - Transistor: HSOP
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0067
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
SVHC: No SVHC (10-Jun-2022)
Produkt ist nicht verfügbar
HP8K24TBROHM SemiconductorMOSFET HP8K24 is the high reliability transistor, suitable for switching and DC/DC converter.
auf Bestellung 2412 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.87 EUR
18+ 2.96 EUR
100+ 2.41 EUR
500+ 2.09 EUR
1000+ 1.7 EUR
2500+ 1.6 EUR
5000+ 1.52 EUR
Mindestbestellmenge: 14
HP8K24TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.58 EUR
Mindestbestellmenge: 100
HP8K24TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 15A/27A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 27A (Tc), 26A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V, 2410pF @ 15V
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 15A, 10V, 3mOhm @ 26A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, 36nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.57 EUR
5000+ 1.5 EUR
Mindestbestellmenge: 2500
HP8KA1TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.81 EUR
12+ 2.3 EUR
100+ 1.79 EUR
500+ 1.51 EUR
1000+ 1.23 EUR
Mindestbestellmenge: 10
HP8KA1TBROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 28A
Power dissipation: 3W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Produkt ist nicht verfügbar
HP8KA1TBROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 28A; 3W; HSOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14A
Pulsed drain current: 28A
Power dissipation: 3W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
HP8KA1TBROHM SemiconductorMOSFET NCH+NCH 30V POWER MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.83 EUR
23+ 2.31 EUR
100+ 1.8 EUR
500+ 1.53 EUR
1000+ 1.24 EUR
2500+ 1.17 EUR
5000+ 1.11 EUR
Mindestbestellmenge: 19
HP8KA1TBRohm SemiconductorTrans MOSFET N-CH 30V 14A 8-Pin HSOP EP T/R
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
177+0.89 EUR
250+ 0.83 EUR
500+ 0.77 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 177
HP8KA1TBRohm SemiconductorDescription: MOSFET 2N-CH 30V 14A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 14A
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.16 EUR
Mindestbestellmenge: 2500
HP8KB6TB1Rohm SemiconductorDescription: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.67 EUR
Mindestbestellmenge: 2500
HP8KB6TB1Rohm SemiconductorTrans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
97+1.64 EUR
Mindestbestellmenge: 97
HP8KB6TB1Rohm SemiconductorDescription: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 20V
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 10.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
10+ 3.53 EUR
25+ 3.35 EUR
100+ 2.75 EUR
250+ 2.57 EUR
500+ 2.27 EUR
1000+ 1.79 EUR
Mindestbestellmenge: 7
HP8KB6TB1ROHM SemiconductorMOSFET 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
13+4 EUR
16+ 3.28 EUR
100+ 2.56 EUR
500+ 2.17 EUR
1000+ 1.91 EUR
2500+ 1.62 EUR
5000+ 1.58 EUR
Mindestbestellmenge: 13
HP8KB6TB1Rohm SemiconductorTrans MOSFET N-CH 40V 10.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
100+1.63 EUR
Mindestbestellmenge: 100
HP8KB7TB1Rohm SemiconductorDescription: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.29 EUR
10+ 5.66 EUR
25+ 5.34 EUR
100+ 4.55 EUR
250+ 4.27 EUR
500+ 3.74 EUR
1000+ 3.1 EUR
Mindestbestellmenge: 5
HP8KB7TB1Rohm SemiconductorHP8KB7TB1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.66 EUR
100+ 2.45 EUR
Mindestbestellmenge: 60
HP8KB7TB1Rohm SemiconductorDescription: 40V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1570pF @ 20V
Rds On (Max) @ Id, Vgs: 8mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.88 EUR
Mindestbestellmenge: 2500
HP8KB7TB1ROHM SemiconductorMOSFET 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
9+6.4 EUR
10+ 5.36 EUR
100+ 4.26 EUR
250+ 3.93 EUR
500+ 3.56 EUR
1000+ 3.33 EUR
2500+ 2.83 EUR
Mindestbestellmenge: 9
HP8KB7TB1Rohm SemiconductorHP8KB7TB1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
55+2.92 EUR
60+ 2.56 EUR
100+ 2 EUR
Mindestbestellmenge: 55
HP8KC6TB1ROHM SemiconductorMOSFET 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.61 EUR
18+ 2.99 EUR
100+ 2.38 EUR
250+ 2.2 EUR
500+ 1.99 EUR
1000+ 1.91 EUR
2500+ 1.62 EUR
Mindestbestellmenge: 15
HP8KC6TB1Rohm SemiconductorDescription: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 3.18 EUR
25+ 3 EUR
100+ 2.56 EUR
250+ 2.4 EUR
500+ 2.1 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 8
HP8KC6TB1Rohm SemiconductorTrans MOSFET N-CH 60V 8.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
97+1.64 EUR
Mindestbestellmenge: 97
HP8KC6TB1Rohm SemiconductorDescription: 60V 23A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 23A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 30V
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.6nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.62 EUR
Mindestbestellmenge: 2500
HP8KC7TB1Rohm SemiconductorDescription: 60V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.34 EUR
10+ 5.69 EUR
25+ 5.37 EUR
100+ 4.58 EUR
250+ 4.3 EUR
500+ 3.76 EUR
1000+ 3.11 EUR
Mindestbestellmenge: 5
HP8KC7TB1Rohm SemiconductorHP8KC7TB1
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.67 EUR
Mindestbestellmenge: 60
HP8KC7TB1ROHM SemiconductorMOSFET 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 167-181 Tag (e)
9+6.45 EUR
10+ 5.36 EUR
100+ 4.29 EUR
250+ 3.95 EUR
500+ 3.59 EUR
1000+ 3.33 EUR
2500+ 2.83 EUR
Mindestbestellmenge: 9
HP8KC7TB1Rohm SemiconductorDescription: 60V 24A, DUAL NCH+NCH, HSOP8, PO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 26W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 24A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 13.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.9 EUR
Mindestbestellmenge: 2500
HP8KC7TB1Rohm SemiconductorHP8KC7TB1
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
54+2.94 EUR
59+ 2.58 EUR
100+ 2.02 EUR
200+ 1.82 EUR
Mindestbestellmenge: 54
HP8KE6TB1Rohm SemiconductorDescription: MOSFET 2N-CH 100V 6A/17A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.69 EUR
Mindestbestellmenge: 2500
HP8KE6TB1Rohm SemiconductorTrans MOSFET N-CH 100V 6A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8KE6TB1ROHM SemiconductorMOSFET 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 4953 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.67 EUR
18+ 3.04 EUR
100+ 2.44 EUR
250+ 2.24 EUR
500+ 2.03 EUR
1000+ 1.99 EUR
2500+ 1.7 EUR
Mindestbestellmenge: 15
HP8KE6TB1ROHMDescription: ROHM - HP8KE6TB1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 17 A, 0.041 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 17A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
euEccn: NLR
Bauform - Transistor: HSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.041ohm
productTraceability: No
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 21W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
HP8KE6TB1Rohm SemiconductorDescription: MOSFET 2N-CH 100V 6A/17A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 21W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 17A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 50V
Rds On (Max) @ Id, Vgs: 54mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.74 EUR
10+ 3.11 EUR
100+ 2.47 EUR
500+ 2.09 EUR
1000+ 1.77 EUR
Mindestbestellmenge: 7
HP8KE6TB1Rohm SemiconductorTrans MOSFET N-CH 100V 6A 8-Pin HSOP EP T/R
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
HP8KE6TB1ROHMDescription: ROHM - HP8KE6TB1 - Dual-MOSFET, Zweifach n-Kanal, 100 V, 17 A, 0.041 ohm
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
HP8KE7TB1Rohm SemiconductorHP8KE7TB1
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
60+2.66 EUR
65+ 2.37 EUR
Mindestbestellmenge: 60
HP8KE7TB1ROHM SemiconductorMOSFET 100V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE7 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 4990 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.71 EUR
10+ 5.59 EUR
100+ 4.45 EUR
250+ 4.11 EUR
500+ 3.72 EUR
1000+ 3.38 EUR
2500+ 2.91 EUR
Mindestbestellmenge: 8
HP8KE7TB1Rohm SemiconductorHP8KE7TB1
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.17 EUR
52+ 2.94 EUR
100+ 2.73 EUR
Mindestbestellmenge: 50
HP8M31TB1Rohm SemiconductorTrans MOSFET N/P-CH 60V 8.5A 8-Pin HSOP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
56+2.79 EUR
100+ 2.59 EUR
250+ 2.42 EUR
500+ 2.26 EUR
1000+ 2.11 EUR
2500+ 1.97 EUR
Mindestbestellmenge: 56
HP8M31TB1Rohm SemiconductorDescription: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
Produkt ist nicht verfügbar
HP8M31TB1ROHM SemiconductorMOSFET HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive.
auf Bestellung 50 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.62 EUR
12+ 4.65 EUR
100+ 3.69 EUR
250+ 3.41 EUR
500+ 3.09 EUR
1000+ 2.65 EUR
2500+ 2.51 EUR
Mindestbestellmenge: 10
HP8M31TB1Rohm SemiconductorTrans MOSFET N/P-CH 60V 8.5A 8-Pin HSOP EP T/R
auf Bestellung 2180 Stücke:
Lieferzeit 14-21 Tag (e)
56+2.79 EUR
100+ 2.59 EUR
250+ 2.42 EUR
500+ 2.26 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 56
HP8M31TB1ROHMDescription: ROHM - HP8M31TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 8.5 A, 8.5 A, 0.046 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.5A
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm
Verlustleistung, p-Kanal: 7W
euEccn: NLR
Bauform - Transistor: HSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 7W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
HP8M31TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 8.5/-8.5A
Pulsed drain current: 18A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 73/80mΩ
Mounting: SMD
Gate charge: 12.3/38nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
HP8M31TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 8.5/-8.5A
Pulsed drain current: 18A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 73/80mΩ
Mounting: SMD
Gate charge: 12.3/38nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
HP8M31TB1Rohm SemiconductorDescription: MOSFET N/P-CH 60V 8.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 30V, 2300pF @ 30V
Rds On (Max) @ Id, Vgs: 65mOhm @ 8.5A, 10V, 70mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V, 38nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
HP8M31TB1ROHMDescription: ROHM - HP8M31TB1 - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 8.5 A, 8.5 A, 0.046 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8.5A
Dauer-Drainstrom Id, p-Kanal: 8.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.046ohm
Verlustleistung, p-Kanal: 7W
euEccn: NLR
Bauform - Transistor: HSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.046ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 7W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
HP8M51TB1ROHM SemiconductorMOSFET HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application.
auf Bestellung 973 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.51 EUR
12+ 4.58 EUR
100+ 3.64 EUR
500+ 3.09 EUR
1000+ 2.6 EUR
2500+ 2.42 EUR
5000+ 2.35 EUR
Mindestbestellmenge: 10
HP8M51TB1Rohm SemiconductorTrans MOSFET N/P-CH 100V 4.5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8M51TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 7W
Gate charge: 15/26.2nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 100/-100V
Type of transistor: N/P-MOSFET
Case: HSOP8
On-state resistance: 180/320mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
HP8M51TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100/-100V; 4.5A; Idm: 18A; 7W
Kind of package: reel; tape
Mounting: SMD
Pulsed drain current: 18A
Power dissipation: 7W
Gate charge: 15/26.2nC
Polarisation: unipolar
Drain current: 4.5A
Kind of channel: enhanced
Drain-source voltage: 100/-100V
Type of transistor: N/P-MOSFET
Case: HSOP8
On-state resistance: 180/320mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
HP8M51TB1Rohm SemiconductorDescription: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
HP8M51TB1Rohm SemiconductorTrans MOSFET N/P-CH 100V 4.5A 8-Pin HSOP EP T/R
auf Bestellung 1465 Stücke:
Lieferzeit 14-21 Tag (e)
58+2.67 EUR
100+ 2.48 EUR
250+ 2.31 EUR
500+ 2.16 EUR
1000+ 2.02 EUR
Mindestbestellmenge: 58
HP8M51TB1Rohm SemiconductorDescription: MOSFET N/P-CH 100V 4.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 50V, 1430pF @ 50V
Rds On (Max) @ Id, Vgs: 170mOhm @ 4.5A, 10V, 290mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, 26.2nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2458 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.3 EUR
10+ 4.4 EUR
100+ 3.5 EUR
500+ 2.96 EUR
1000+ 2.51 EUR
Mindestbestellmenge: 5
HP8MA2TB1Rohm SemiconductorDescription: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2304 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.24 EUR
10+ 3.52 EUR
100+ 2.8 EUR
500+ 2.37 EUR
1000+ 2.01 EUR
Mindestbestellmenge: 7
HP8MA2TB1Rohm SemiconductorTrans MOSFET N/P-CH 30V 18A/15A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8MA2TB1Rohm SemiconductorDescription: MOSFET N/P-CH 30V 18A/15A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Produkt ist nicht verfügbar
HP8MA2TB1ROHM SemiconductorMOSFET HP8MA2 is low on-resistance and small surface mount package MOSFET for switching application.
auf Bestellung 1986 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.29 EUR
16+ 3.43 EUR
100+ 2.83 EUR
250+ 2.6 EUR
500+ 2.38 EUR
1000+ 2.04 EUR
2500+ 1.94 EUR
Mindestbestellmenge: 13
HP8MA2TB1Rohm SemiconductorTrans MOSFET N/P-CH 30V 18A/15A 8-Pin HSOP EP T/R
auf Bestellung 1854 Stücke:
Lieferzeit 14-21 Tag (e)
129+1.22 EUR
250+ 1.13 EUR
500+ 1.05 EUR
1000+ 0.98 EUR
Mindestbestellmenge: 129
HP8MA2TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
HP8MA2TB1ROHM SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 18/15A; Idm: 48A; 7W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 18/15A
Pulsed drain current: 48A
Power dissipation: 7W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 16.4/29mΩ
Mounting: SMD
Gate charge: 22/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
HP8MB5TB1Rohm SemiconductorTrans MOSFET N/P-CH 40V 6A/7A 8-Pin HSOP EP T/R
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
109+1.46 EUR
128+ 1.19 EUR
149+ 0.99 EUR
200+ 0.9 EUR
Mindestbestellmenge: 109
HP8MB5TB1ROHM SemiconductorMOSFET 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.3 EUR
20+ 2.73 EUR
100+ 2.12 EUR
500+ 1.8 EUR
1000+ 1.58 EUR
2500+ 1.34 EUR
5000+ 1.31 EUR
Mindestbestellmenge: 16
HP8MB5TB1Rohm SemiconductorDescription: 40V 16.5A, DUAL NCH+PCH, HSOP8,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.28 EUR
10+ 2.92 EUR
25+ 2.78 EUR
100+ 2.28 EUR
250+ 2.13 EUR
500+ 1.88 EUR
1000+ 1.49 EUR
Mindestbestellmenge: 8
HP8MB5TB1Rohm SemiconductorDescription: 40V 16.5A, DUAL NCH+PCH, HSOP8,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V
Rds On (Max) @ Id, Vgs: 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.39 EUR
Mindestbestellmenge: 2500
HP8MC5TB1ROHMDescription: ROHM - HP8MC5TB1 - Dual-MOSFET, Komplementärer n- und p-Kanal, 60 V, 60 V, 12 A, 12 A, 0.09 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 12A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.096ohm
Verlustleistung, p-Kanal: 20W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: HSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.09ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 20W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8MC5TB1Rohm SemiconductorTrans MOSFET N/P-CH 60V 4A/5A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8MC5TB1ROHM SemiconductorMOSFET 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 5000 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.3 EUR
20+ 2.73 EUR
100+ 2.12 EUR
500+ 1.8 EUR
1000+ 1.58 EUR
2500+ 1.34 EUR
5000+ 1.31 EUR
Mindestbestellmenge: 16
HP8ME5TB1Rohm SemiconductorTrans MOSFET N/P-CH 100V 3A 8-Pin HSOP EP T/R
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
HP8ME5TB1ROHMDescription: ROHM - HP8ME5TB1 - Dual-MOSFET, n- und p-Kanal, 100 V, 100 V, 8.5 A, 8 A, 0.148 ohm
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
HP8ME5TB1ROHM SemiconductorMOSFET 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications.
auf Bestellung 4936 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.33 EUR
19+ 2.76 EUR
100+ 2.13 EUR
500+ 1.81 EUR
1000+ 1.63 EUR
2500+ 1.39 EUR
5000+ 1.32 EUR
Mindestbestellmenge: 16
HP8ME5TB1Rohm SemiconductorDescription: MOSFET N/P-CH 100V 3A/8.5A 8HSOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
10+ 2.8 EUR
100+ 2.18 EUR
500+ 1.84 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 8
HP8ME5TB1ROHMDescription: ROHM - HP8ME5TB1 - Dual-MOSFET, n- und p-Kanal, 100 V, 100 V, 8.5 A, 8 A, 0.148 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 100V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 8.5A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.21ohm
Verlustleistung, p-Kanal: 20W
euEccn: NLR
Bauform - Transistor: HSOP
Anzahl der Pins: 8Pin(s)
Produktpalette: PW Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.148ohm
productTraceability: No
Kanaltyp: n- und p-Kanal
Verlustleistung, n-Kanal: 20W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
HP8ME5TB1Rohm SemiconductorTrans MOSFET N/P-CH 100V 3A 8-Pin HSOP EP T/R
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
126+1.26 EUR
143+ 1.07 EUR
163+ 0.9 EUR
Mindestbestellmenge: 126
HP8ME5TB1Rohm SemiconductorDescription: MOSFET N/P-CH 100V 3A/8.5A 8HSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 20W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V, 590pF @ 50V
Rds On (Max) @ Id, Vgs: 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2.9nC @ 10V, 19.7nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.41 EUR
Mindestbestellmenge: 2500
HP8P
auf Bestellung 6230 Stücke:
Lieferzeit 21-28 Tag (e)
HP8Q
auf Bestellung 4115 Stücke:
Lieferzeit 21-28 Tag (e)
HP8S36ROHM SemiconductorMOSFET
Produkt ist nicht verfügbar
HP8S36TBRohm SemiconductorDescription: 30V NCH+NCH MIDDLE POWER MOSFET,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 80A
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Not For New Designs
Produkt ist nicht verfügbar
HP8S36TBRohm SemiconductorTrans MOSFET N-CH 30V 27A/80A 8-Pin HSOP EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
124+1.28 EUR
250+ 1.18 EUR
500+ 1.1 EUR
1000+ 1.02 EUR
2500+ 0.95 EUR
5000+ 0.89 EUR
Mindestbestellmenge: 124
HP8S36TBROHM SemiconductorMOSFET 30V Nch+Nch Si MOSFET
Produkt ist nicht verfügbar
HP8S36TBRohm SemiconductorDescription: 30V NCH+NCH MIDDLE POWER MOSFET,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 29W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 27A, 80A
Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 15V
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-HSOP
Part Status: Not For New Designs
Produkt ist nicht verfügbar
HP8S36TB
Produktcode: 174887		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar