Suchergebnisse für "50n60" : > 120

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IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.43 EUR
7+ 11.13 EUR
10+ 11.11 EUR
Mindestbestellmenge: 5
IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.43 EUR
7+ 11.13 EUR
10+ 11.11 EUR
Mindestbestellmenge: 5
IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.18 EUR
9+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
6+12.18 EUR
9+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3 IXXH150N60C3 IXYS littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.52 EUR
30+ 15.57 EUR
120+ 13.93 EUR
510+ 12.3 EUR
IXXH150N60C3 IXXH150N60C3 Littelfuse littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf Trans IGBT Chip N-CH 600V 300A 1360000mW
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH150N60C3 IXXH150N60C3 IXYS media-3323158.pdf IGBT Transistors IGBT XPT-GENX3
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
2+28.65 EUR
10+ 28.63 EUR
Mindestbestellmenge: 2
IXXH50N60B3 IXXH50N60B3 IXYS media-3319329.pdf IGBT Transistors GenX3 600V XPT IGBTs
auf Bestellung 199 Stücke:
Lieferzeit 14-28 Tag (e)
2+27.77 EUR
10+ 24.47 EUR
30+ 23.79 EUR
60+ 22.46 EUR
120+ 21.16 EUR
510+ 20.67 EUR
1020+ 20.07 EUR
Mindestbestellmenge: 2
IXXH50N60B3D1 IXXH50N60B3D1 IXYS media?resourcetype=datasheets&amp;itemid=0ea64f9b-78b8-4b55-b0d9-758a71b93456&amp;filename=littelfuse_discrete_igbts_xpt_ixxh50n60b3d1_datasheet.pdf Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.06 EUR
30+ 16.25 EUR
120+ 15.3 EUR
IXXH50N60B3D1 IXXH50N60B3D1 IXYS media-3319508.pdf IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 300 Stücke:
Lieferzeit 336-350 Tag (e)
2+29.46 EUR
10+ 22.46 EUR
Mindestbestellmenge: 2
IXXH50N60C3D1 IXXH50N60C3D1 IXYS media-3323788.pdf IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
auf Bestellung 450 Stücke:
Lieferzeit 14-28 Tag (e)
2+30.58 EUR
10+ 27.14 EUR
30+ 25.51 EUR
60+ 24.96 EUR
510+ 21.32 EUR
1020+ 19.55 EUR
Mindestbestellmenge: 2
NGTB50N60FWG NGTB50N60FWG onsemi ngtb50n60fw-d.pdf Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
auf Bestellung 10950 Stücke:
Lieferzeit 10-14 Tag (e)
88+5.65 EUR
Mindestbestellmenge: 88
NGTB50N60S1WG NGTB50N60S1WG onsemi NGTB50N60S1WG.pdf Description: IGBT 50A 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
93+5.32 EUR
Mindestbestellmenge: 93
NGTB50N60SWG NGTB50N60SWG onsemi ngtb50n60sw-d.pdf Description: IGBT 600V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
99+5.01 EUR
Mindestbestellmenge: 99
NGTG50N60FLWG NGTG50N60FLWG onsemi NGTG50N60FLWG.pdf Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
100+4.96 EUR
Mindestbestellmenge: 100
NGTG50N60FWG NGTG50N60FWG onsemi ngtg50n60fw-d.pdf Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 117ns/285ns
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
auf Bestellung 4181 Stücke:
Lieferzeit 10-14 Tag (e)
105+4.75 EUR
Mindestbestellmenge: 105
RM150N60HD-W RM150N60HD-W Rectron rm150n60hd-1395994.pdf MOSFET
auf Bestellung 753 Stücke:
Lieferzeit 14-28 Tag (e)
9+6.34 EUR
10+ 5.28 EUR
100+ 4.21 EUR
250+ 3.87 EUR
500+ 3.54 EUR
800+ 3.02 EUR
2400+ 2.83 EUR
Mindestbestellmenge: 9
SGW50N60HSFKSA1 SGW50N60HSFKSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 600V 100A 416W TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
96+5.19 EUR
Mindestbestellmenge: 96
SIHA150N60E-GE3 SIHA150N60E-GE3 Vishay Siliconix siha150n60e.pdf Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+ 4.81 EUR
100+ 3.89 EUR
500+ 3.46 EUR
1000+ 2.96 EUR
2000+ 2.79 EUR
Mindestbestellmenge: 4
SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.05 EUR
10+ 5.08 EUR
100+ 4.11 EUR
500+ 3.65 EUR
Mindestbestellmenge: 3
SIHB150N60E-GE3 SIHB150N60E-GE3 Vishay / Siliconix sihb150n60e.pdf MOSFET E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
auf Bestellung 1916 Stücke:
Lieferzeit 14-28 Tag (e)
6+8.87 EUR
10+ 7.46 EUR
25+ 7.05 EUR
100+ 6.06 EUR
250+ 5.69 EUR
500+ 5.38 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 6
SIHG050N60E-GE3 SIHG050N60E-GE3 Vishay Siliconix sihg050n60e.pdf Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.58 EUR
10+ 13.34 EUR
100+ 11.12 EUR
Mindestbestellmenge: 2
SIHG050N60E-GE3 SIHG050N60E-GE3 Vishay Semiconductors sihg050n60e.pdf MOSFET 650V Vds 30V Vgs TO-247AC
auf Bestellung 207 Stücke:
Lieferzeit 14-28 Tag (e)
3+22.83 EUR
10+ 19.55 EUR
25+ 17.76 EUR
100+ 16.3 EUR
250+ 15.34 EUR
500+ 14.38 EUR
1000+ 12.95 EUR
Mindestbestellmenge: 3
SIHG150N60E-GE3 SIHG150N60E-GE3 Vishay Siliconix sihg150n60e.pdf Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.83 EUR
10+ 5.73 EUR
100+ 4.63 EUR
500+ 4.12 EUR
1000+ 3.53 EUR
Mindestbestellmenge: 3
SIHH150N60E-T1-GE3 SIHH150N60E-T1-GE3 Vishay Siliconix sihh150n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.19 EUR
Mindestbestellmenge: 3000
SIHH150N60E-T1-GE3 SIHH150N60E-T1-GE3 Vishay Siliconix sihh150n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.61 EUR
10+ 7.22 EUR
100+ 5.84 EUR
500+ 5.2 EUR
1000+ 4.45 EUR
Mindestbestellmenge: 3
SIHH150N60E-T1-GE3 SIHH150N60E-T1-GE3 Vishay / Siliconix sihh150n60e.pdf MOSFET E Series Power MOSFET PowerPAK 8x8, 155 mohm a. 10V
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.48 EUR
10+ 10.5 EUR
25+ 9.88 EUR
100+ 8.48 EUR
250+ 8.01 EUR
500+ 7.54 EUR
1000+ 6.45 EUR
Mindestbestellmenge: 5
SIHH250N60EF-T1GE3 SIHH250N60EF-T1GE3 Vishay Siliconix sihh250n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
auf Bestellung 3050 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.85 EUR
10+ 5.74 EUR
100+ 4.65 EUR
500+ 4.13 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 3
SIHH250N60EF-T1GE3 SIHH250N60EF-T1GE3 Vishay Siliconix sihh250n60ef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.33 EUR
Mindestbestellmenge: 3000
SIHH250N60EF-T1GE3 SIHH250N60EF-T1GE3 Vishay Semiconductors sihh250n60ef.pdf MOSFET EF SERIES PWR MOSFET
auf Bestellung 9020 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.04 EUR
10+ 8.45 EUR
25+ 7.96 EUR
100+ 6.81 EUR
250+ 6.45 EUR
500+ 6.06 EUR
1000+ 5.54 EUR
Mindestbestellmenge: 6
SIHP050N60E-GE3 SIHP050N60E-GE3 Vishay Siliconix sihp050n60e.pdf Description: MOSFET N-CH 600V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 956 Stücke:
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500+ 9.29 EUR
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SIHP050N60E-GE3 SIHP050N60E-GE3 Vishay / Siliconix sihp050n60e.pdf MOSFET 650V Vds 30V Vgs TO-220AB
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SIHP150N60E-GE3 SIHP150N60E-GE3 Vishay Siliconix sihp150n60e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
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3+5.9 EUR
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100+ 4.01 EUR
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STP50N60DM6 STP50N60DM6 STMicroelectronics stp50n60dm6.pdf Description: MOSFET N-CH 600V 36A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 735 Stücke:
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STP50N60DM6 STP50N60DM6 STMicroelectronics stp50n60dm6-1874801.pdf MOSFET N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET
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4+14.17 EUR
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E250N60 ST
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IGW50N60TP Infineon technologies
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES IKFW50N60ET.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 59A
Power dissipation: 120W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 240 Stücke
auf Bestellung 2 Stücke:
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240+6.72 EUR
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IKW50N60DTP Infineon
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IKW50N60DTP Infineon technologies
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IXGK50N60AU1 IXYS IXGK50N60AU1.pdf
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IXGN50N60BD3 ABB IXGN50N60BD2,3.pdf 07+;
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IXGN50N60BD3 IXYS IXGN50N60BD2,3.pdf
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IXGN50N60BD3 IXYS IXGN50N60BD2,3.pdf MODULE
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IXSK50N60AU1 IXYS IXSK50N60AU1.pdf 09+ QFN
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IXSN50N60U1 IXYS
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NGTB50N60L2WG ON Semiconductor ngtb50n60l2w-d.pdf
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NGTG50N60FWG ON Semiconductor ngtg50n60fw-d.pdf
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RFP50N60
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SGL50N60RUF
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SGL50N60RUFD
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SGL50N60RUFDTU===
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SGL50N60RUFDTU===Fairchild
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SGL50N60RUFDTU==Fa
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SGL50N60RUFDTU==Fairchild
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SGL50N60RUFTU SGL50N60RUF.pdf
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SGW50N60HS INFINEON MODULE
auf Bestellung 184 Stücke:
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SM50N60P
auf Bestellung 100000 Stücke:
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TD250N600KOF AEG 05+
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Lieferzeit 21-28 Tag (e)
Транзистор IGBT IKW50N60H3_(K50H603, K50T60) 50А 600V TO-247
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+16.43 EUR
7+ 11.13 EUR
10+ 11.11 EUR
Mindestbestellmenge: 5
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
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Anzahl Preis ohne MwSt
5+16.43 EUR
7+ 11.13 EUR
10+ 11.11 EUR
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IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.18 EUR
9+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 150A
Power dissipation: 1.36kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 700A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+12.18 EUR
9+ 8.25 EUR
Mindestbestellmenge: 6
IXXH150N60C3 littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf
IXXH150N60C3
Hersteller: IXYS
Description: IGBT 600V TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+19.52 EUR
30+ 15.57 EUR
120+ 13.93 EUR
510+ 12.3 EUR
IXXH150N60C3 littelfuse_discrete_igbts_xpt_ixxh150n60c3_datasheet.pdf.pdf
IXXH150N60C3
Hersteller: Littelfuse
Trans IGBT Chip N-CH 600V 300A 1360000mW
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
IXXH150N60C3 media-3323158.pdf
IXXH150N60C3
Hersteller: IXYS
IGBT Transistors IGBT XPT-GENX3
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+28.65 EUR
10+ 28.63 EUR
Mindestbestellmenge: 2
IXXH50N60B3 media-3319329.pdf
IXXH50N60B3
Hersteller: IXYS
IGBT Transistors GenX3 600V XPT IGBTs
auf Bestellung 199 Stücke:
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Anzahl Preis ohne MwSt
2+27.77 EUR
10+ 24.47 EUR
30+ 23.79 EUR
60+ 22.46 EUR
120+ 21.16 EUR
510+ 20.67 EUR
1020+ 20.07 EUR
Mindestbestellmenge: 2
IXXH50N60B3D1 media?resourcetype=datasheets&amp;itemid=0ea64f9b-78b8-4b55-b0d9-758a71b93456&amp;filename=littelfuse_discrete_igbts_xpt_ixxh50n60b3d1_datasheet.pdf
IXXH50N60B3D1
Hersteller: IXYS
Description: IGBT 600V 120A 600W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 175 Stücke:
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Anzahl Preis ohne MwSt
1+20.06 EUR
30+ 16.25 EUR
120+ 15.3 EUR
IXXH50N60B3D1 media-3319508.pdf
IXXH50N60B3D1
Hersteller: IXYS
IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 300 Stücke:
Lieferzeit 336-350 Tag (e)
Anzahl Preis ohne MwSt
2+29.46 EUR
10+ 22.46 EUR
Mindestbestellmenge: 2
IXXH50N60C3D1 media-3323788.pdf
IXXH50N60C3D1
Hersteller: IXYS
IGBT Transistors XPT IGBT C3-Class 600V/100Amp CoPacked
auf Bestellung 450 Stücke:
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Anzahl Preis ohne MwSt
2+30.58 EUR
10+ 27.14 EUR
30+ 25.51 EUR
60+ 24.96 EUR
510+ 21.32 EUR
1020+ 19.55 EUR
Mindestbestellmenge: 2
NGTB50N60FWG ngtb50n60fw-d.pdf
NGTB50N60FWG
Hersteller: onsemi
Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
auf Bestellung 10950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
88+5.65 EUR
Mindestbestellmenge: 88
NGTB50N60S1WG NGTB50N60S1WG.pdf
NGTB50N60S1WG
Hersteller: onsemi
Description: IGBT 50A 600V TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1440 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
93+5.32 EUR
Mindestbestellmenge: 93
NGTB50N60SWG ngtb50n60sw-d.pdf
NGTB50N60SWG
Hersteller: onsemi
Description: IGBT 600V 50A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
99+5.01 EUR
Mindestbestellmenge: 99
NGTG50N60FLWG NGTG50N60FLWG.pdf
NGTG50N60FLWG
Hersteller: onsemi
Description: IGBT 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 116ns/292ns
Switching Energy: 1.1mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
auf Bestellung 4287 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
100+4.96 EUR
Mindestbestellmenge: 100
NGTG50N60FWG ngtg50n60fw-d.pdf
NGTG50N60FWG
Hersteller: onsemi
Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 117ns/285ns
Switching Energy: 1.1mJ (on), 1.2mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 310 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 223 W
auf Bestellung 4181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
105+4.75 EUR
Mindestbestellmenge: 105
RM150N60HD-W rm150n60hd-1395994.pdf
RM150N60HD-W
Hersteller: Rectron
MOSFET
auf Bestellung 753 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.34 EUR
10+ 5.28 EUR
100+ 4.21 EUR
250+ 3.87 EUR
500+ 3.54 EUR
800+ 3.02 EUR
2400+ 2.83 EUR
Mindestbestellmenge: 9
SGW50N60HSFKSA1 Part_Number_Guide_Web.pdf
SGW50N60HSFKSA1
Hersteller: Infineon Technologies
Description: IGBT 600V 100A 416W TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
96+5.19 EUR
Mindestbestellmenge: 96
SIHA150N60E-GE3 siha150n60e.pdf
SIHA150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET THIN-LEAD
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.72 EUR
10+ 4.81 EUR
100+ 3.89 EUR
500+ 3.46 EUR
1000+ 2.96 EUR
2000+ 2.79 EUR
Mindestbestellmenge: 4
SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.05 EUR
10+ 5.08 EUR
100+ 4.11 EUR
500+ 3.65 EUR
Mindestbestellmenge: 3
SIHB150N60E-GE3 sihb150n60e.pdf
SIHB150N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
auf Bestellung 1916 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+8.87 EUR
10+ 7.46 EUR
25+ 7.05 EUR
100+ 6.06 EUR
250+ 5.69 EUR
500+ 5.38 EUR
1000+ 4.55 EUR
Mindestbestellmenge: 6
SIHG050N60E-GE3 sihg050n60e.pdf
SIHG050N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.58 EUR
10+ 13.34 EUR
100+ 11.12 EUR
Mindestbestellmenge: 2
SIHG050N60E-GE3 sihg050n60e.pdf
SIHG050N60E-GE3
Hersteller: Vishay Semiconductors
MOSFET 650V Vds 30V Vgs TO-247AC
auf Bestellung 207 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+22.83 EUR
10+ 19.55 EUR
25+ 17.76 EUR
100+ 16.3 EUR
250+ 15.34 EUR
500+ 14.38 EUR
1000+ 12.95 EUR
Mindestbestellmenge: 3
SIHG150N60E-GE3 sihg150n60e.pdf
SIHG150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.83 EUR
10+ 5.73 EUR
100+ 4.63 EUR
500+ 4.12 EUR
1000+ 3.53 EUR
Mindestbestellmenge: 3
SIHH150N60E-T1-GE3 sihh150n60e.pdf
SIHH150N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.19 EUR
Mindestbestellmenge: 3000
SIHH150N60E-T1-GE3 sihh150n60e.pdf
SIHH150N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.61 EUR
10+ 7.22 EUR
100+ 5.84 EUR
500+ 5.2 EUR
1000+ 4.45 EUR
Mindestbestellmenge: 3
SIHH150N60E-T1-GE3 sihh150n60e.pdf
SIHH150N60E-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET E Series Power MOSFET PowerPAK 8x8, 155 mohm a. 10V
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.48 EUR
10+ 10.5 EUR
25+ 9.88 EUR
100+ 8.48 EUR
250+ 8.01 EUR
500+ 7.54 EUR
1000+ 6.45 EUR
Mindestbestellmenge: 5
SIHH250N60EF-T1GE3 sihh250n60ef.pdf
SIHH250N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
auf Bestellung 3050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.85 EUR
10+ 5.74 EUR
100+ 4.65 EUR
500+ 4.13 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 3
SIHH250N60EF-T1GE3 sihh250n60ef.pdf
SIHH250N60EF-T1GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5.5A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+3.33 EUR
Mindestbestellmenge: 3000
SIHH250N60EF-T1GE3 sihh250n60ef.pdf
SIHH250N60EF-T1GE3
Hersteller: Vishay Semiconductors
MOSFET EF SERIES PWR MOSFET
auf Bestellung 9020 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.04 EUR
10+ 8.45 EUR
25+ 7.96 EUR
100+ 6.81 EUR
250+ 6.45 EUR
500+ 6.06 EUR
1000+ 5.54 EUR
Mindestbestellmenge: 6
SIHP050N60E-GE3 sihp050n60e.pdf
SIHP050N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.73 EUR
10+ 12.63 EUR
100+ 10.53 EUR
500+ 9.29 EUR
Mindestbestellmenge: 2
SIHP050N60E-GE3 sihp050n60e.pdf
SIHP050N60E-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs TO-220AB
auf Bestellung 297 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
3+21.61 EUR
10+ 18.54 EUR
25+ 17.58 EUR
100+ 15.44 EUR
250+ 14.95 EUR
500+ 13.65 EUR
1000+ 12.19 EUR
Mindestbestellmenge: 3
SIHP150N60E-GE3 sihp150n60e.pdf
SIHP150N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+5.9 EUR
10+ 4.95 EUR
100+ 4.01 EUR
500+ 3.56 EUR
1000+ 3.05 EUR
2000+ 2.87 EUR
Mindestbestellmenge: 3
STP50N60DM6 stp50n60dm6.pdf
STP50N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 36A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 18A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.66 EUR
50+ 7.65 EUR
100+ 6.56 EUR
500+ 5.83 EUR
Mindestbestellmenge: 2
STP50N60DM6 stp50n60dm6-1874801.pdf
STP50N60DM6
Hersteller: STMicroelectronics
MOSFET N-channel 600 V, 70 mOhm typ 36 A MDmesh DM6 Power MOSFET
auf Bestellung 519 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+14.17 EUR
10+ 12.95 EUR
25+ 11.23 EUR
100+ 9.65 EUR
250+ 9.33 EUR
500+ 8.55 EUR
1000+ 7.28 EUR
Mindestbestellmenge: 4
E250N60
Hersteller: ST
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IGW50N60TP
Hersteller: Infineon technologies
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
IKFW50N60ETXKSA1 IKFW50N60ET.pdf
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 59A
Power dissipation: 120W
Case: PG-TO247-3-AI
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 240 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
240+6.72 EUR
Mindestbestellmenge: 240
IKW50N60DTP
Hersteller: Infineon
auf Bestellung 15600 Stücke:
Lieferzeit 21-28 Tag (e)
IKW50N60DTP
Hersteller: Infineon technologies
auf Bestellung 239 Stücke:
Lieferzeit 21-28 Tag (e)
IXGK50N60AU1 IXGK50N60AU1.pdf
Hersteller: IXYS
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN50N60BD3 IXGN50N60BD2,3.pdf
Hersteller: ABB
07+;
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN50N60BD3 IXGN50N60BD2,3.pdf
Hersteller: IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IXGN50N60BD3 IXGN50N60BD2,3.pdf
Hersteller: IXYS
MODULE
auf Bestellung 80 Stücke:
Lieferzeit 21-28 Tag (e)
IXSK50N60AU1 IXSK50N60AU1.pdf
Hersteller: IXYS
09+ QFN
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
IXSN50N60U1
Hersteller: IXYS
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
NGTB50N60L2WG ngtb50n60l2w-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 250 Stücke:
Lieferzeit 21-28 Tag (e)
NGTG50N60FWG ngtg50n60fw-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
RFP50N60
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUF
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFD
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFDTU===
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFDTU===Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFDTU==Fa
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFDTU==Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGL50N60RUFTU SGL50N60RUF.pdf
auf Bestellung 4950 Stücke:
Lieferzeit 21-28 Tag (e)
SGW50N60HS
Hersteller: INFINEON
MODULE
auf Bestellung 184 Stücke:
Lieferzeit 21-28 Tag (e)
SM50N60P
auf Bestellung 100000 Stücke:
Lieferzeit 21-28 Tag (e)
TD250N600KOF
Hersteller: AEG
05+
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Транзистор IGBT IKW50N60H3_(K50H603, K50T60) 50А 600V TO-247
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
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