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SGW50N60HS SGW50N60HS
Produktcode: 73803
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Infineon Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 5 Stück:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1 Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.65 EUR
10+8.21 EUR
30+7.5 EUR
120+6.86 EUR
270+6.59 EUR
Mindestbestellmenge: 2
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon-AIKW50N60CT-DS-v02_01-EN.pdf IGBTs DISCRETES
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.67 EUR
10+8.24 EUR
25+7.52 EUR
100+6.86 EUR
240+6.35 EUR
480+6.27 EUR
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FDBL0150N60 FDBL0150N60 onsemi / Fairchild FDBL0150N60-D.pdf MOSFETs Update code D
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.93 EUR
10+7.78 EUR
100+6.86 EUR
500+6.41 EUR
1000+6.3 EUR
2000+5.84 EUR
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FDBL0150N60 FDBL0150N60 onsemi fdbl0150n60-d.pdf Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1231 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.11 EUR
10+7.91 EUR
100+6.85 EUR
Mindestbestellmenge: 2
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FDBL0150N60 Fairchild Semiconductor fdbl0150n60-d.pdf Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
62+7.37 EUR
Mindestbestellmenge: 62
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IGB50N60T IGB50N60T Infineon Technologies Infineon-IGB50N60T-DS-v02_07-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.46 EUR
10+4.31 EUR
100+3.31 EUR
500+2.97 EUR
1000+2.5 EUR
2000+2.43 EUR
5000+2.38 EUR
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IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.27 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies Infineon-IGB50N60T-DS-v02_07-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.55 EUR
10+4.31 EUR
100+3.06 EUR
500+2.8 EUR
1000+2.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.53 EUR
10+4.3 EUR
100+3.04 EUR
500+2.78 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60T IGP50N60T Infineon Technologies Infineon-IGP50N60T-DS-v02_08-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.21 EUR
10+4.07 EUR
100+3.12 EUR
500+2.64 EUR
1000+2.32 EUR
2500+2.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60TXKSA1 IGP50N60TXKSA1 Infineon Technologies IGP_W50N60T_Rev2_6G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b856d0d278c6 Description: IGBT TRENCH FS 600V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.14 EUR
50+3.13 EUR
100+2.84 EUR
500+2.33 EUR
1000+2.17 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGP50N60TXKSA1 IGP50N60TXKSA1 Infineon Technologies Infineon-IGP50N60T-DS-v02_08-EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.18 EUR
10+3.85 EUR
100+2.99 EUR
500+2.8 EUR
1000+2.62 EUR
2500+2.5 EUR
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IGW50N60H3 IGW50N60H3 Infineon Technologies IGW50N60H3_2_2.pdf IGBTs 600V 50A 333W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.08 EUR
10+3.94 EUR
100+3.68 EUR
480+2.64 EUR
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.6 EUR
27+2.7 EUR
28+2.56 EUR
30+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.6 EUR
27+2.7 EUR
28+2.56 EUR
30+2.47 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 Infineon IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
2+14.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3FKSA1 Infineon Technologies IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.06 EUR
30+3.93 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60T IGW50N60T Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.51 EUR
10+4.28 EUR
100+3.19 EUR
480+2.85 EUR
1200+2.43 EUR
2640+2.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.22 EUR
17+4.23 EUR
18+4 EUR
30+3.85 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)
14+5.22 EUR
17+4.23 EUR
18+4 EUR
30+3.85 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.37 EUR
30+3.52 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.58 EUR
10+4.28 EUR
100+3.19 EUR
480+2.78 EUR
1200+2.53 EUR
2640+2.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TPXKSA1 IGW50N60TPXKSA1 Infineon Technologies Infineon-IGW50N60TP-DS-v02_01-EN.pdf?fileId=5546d46269bda8df0169c912513c1b5b Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.8 EUR
30+2.6 EUR
120+2.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+11.91 EUR
9+7.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 Infineon Technologies Infineon-IKFW50N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff1f782dfb Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.2 EUR
30+4.61 EUR
120+3.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 Infineon Technologies Infineon-IKFW50N60DH3E-DataSheet-v02_01-EN.pdf IGBTs HOME APPLIANCES 14
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.04 EUR
10+4.63 EUR
100+3.5 EUR
480+3.22 EUR
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IKFW50N60DH3XKSA1 IKFW50N60DH3XKSA1 Infineon Technologies Infineon-IKFW50N60DH3-DataSheet-v02_01-EN.pdf IGBTs INDUSTRY 14
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.32 EUR
10+6.92 EUR
100+6.02 EUR
480+4.59 EUR
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 Infineon Technologies Infineon_IKFW50N60ET_DS_v02_01_EN.pdf IGBTs INDUSTRY 14
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 Infineon Technologies Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2 Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
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2+13.16 EUR
30+7.7 EUR
120+6.5 EUR
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 505 Stücke:
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32+2.25 EUR
34+2.12 EUR
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 Infineon Technologies Infineon_IKW50N60DTP_DataSheet_v02_01_EN.pdf IGBTs INDUSTRY 14
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.65 EUR
10+3.08 EUR
100+2.57 EUR
480+1.95 EUR
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 Infineon Technologies Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 1 Stücke:
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IKW50N60H3 IKW50N60H3 Infineon Technologies Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf IGBTs HIGH SPEED SWITCHING
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.3 EUR
10+5.84 EUR
100+4.72 EUR
480+4.19 EUR
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.71 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 13
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
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Lieferzeit 7-14 Tag (e)
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19+3.93 EUR
20+3.72 EUR
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 Infineon Technologies IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 362 Stücke:
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3+8.5 EUR
30+4.8 EUR
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IKW50N60T Infineon INFNS30103-1.pdf?t.download=true&u=5oefqw Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
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IKW50N60T Infineon INFNS30103-1.pdf?t.download=true&u=5oefqw Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
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IKW50N60T IKW50N60T Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.66 EUR
10+6.55 EUR
100+5.28 EUR
480+4.7 EUR
1200+4.03 EUR
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IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
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60+7.56 EUR
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 194 Stücke:
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10+7.34 EUR
15+4.78 EUR
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 194 Stücke:
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10+7.34 EUR
15+4.78 EUR
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IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.26 EUR
30+5.26 EUR
120+4.38 EUR
Mindestbestellmenge: 2
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IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.28 EUR
10+5.28 EUR
100+4.17 EUR
480+3.78 EUR
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IXFH50N60P3 IXFH50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.14 EUR
8+9.18 EUR
9+8.68 EUR
30+8.35 EUR
Mindestbestellmenge: 6
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IXFH50N60P3 IXFH50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 342 Stücke:
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6+12.14 EUR
8+9.18 EUR
9+8.68 EUR
30+8.35 EUR
Mindestbestellmenge: 6
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IXFH50N60P3 IXFH50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 1226 Stücke:
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2+17.32 EUR
30+10.37 EUR
120+8.84 EUR
510+8.32 EUR
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IXFH50N60P3 IXFH50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 490 Stücke:
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1+16.7 EUR
10+10.07 EUR
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IXFQ50N60P3 IXFQ50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
6+13.74 EUR
8+9.02 EUR
9+8.52 EUR
120+8.21 EUR
Mindestbestellmenge: 6
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IXFQ50N60P3 IXFQ50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
6+13.74 EUR
8+9.02 EUR
9+8.52 EUR
120+8.21 EUR
Mindestbestellmenge: 6
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IXFT50N60P3 IXFT50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFT50N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
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6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
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IXFT50N60P3 IXFT50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 95 Stücke:
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1+18.96 EUR
10+13.45 EUR
120+12.5 EUR
510+11.4 EUR
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IXFT50N60P3 IXFT50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 810 Stücke:
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1+18.83 EUR
30+11.35 EUR
120+9.71 EUR
510+9.27 EUR
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IXFT50N60X IXFT50N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+16.43 EUR
7+11.11 EUR
Mindestbestellmenge: 5
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IXFT50N60X IXFT50N60X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
5+16.43 EUR
7+11.11 EUR
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IXXA50N60B3 IXXA50N60B3 IXYS Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
300+8.56 EUR
Mindestbestellmenge: 300
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IXXH150N60C3 IXXH150N60C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
5+17.79 EUR
6+12.07 EUR
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SGW50N60HS
Produktcode: 73803
zu Favoriten hinzufügen Lieblingsprodukt

SGW50N60HS
Hersteller: Infineon
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 5 Stück:
Lieferzeit 21-28 Tag (e)
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AIKW50N60CTXKSA1 Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.65 EUR
10+8.21 EUR
30+7.5 EUR
120+6.86 EUR
270+6.59 EUR
Mindestbestellmenge: 2
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AIKW50N60CTXKSA1 Infineon-AIKW50N60CT-DS-v02_01-EN.pdf
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.67 EUR
10+8.24 EUR
25+7.52 EUR
100+6.86 EUR
240+6.35 EUR
480+6.27 EUR
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FDBL0150N60 FDBL0150N60-D.pdf
FDBL0150N60
Hersteller: onsemi / Fairchild
MOSFETs Update code D
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.93 EUR
10+7.78 EUR
100+6.86 EUR
500+6.41 EUR
1000+6.3 EUR
2000+5.84 EUR
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FDBL0150N60 fdbl0150n60-d.pdf
FDBL0150N60
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1231 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.11 EUR
10+7.91 EUR
100+6.85 EUR
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FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: Fairchild Semiconductor
Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
62+7.37 EUR
Mindestbestellmenge: 62
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IGB50N60T Infineon-IGB50N60T-DS-v02_07-EN.pdf
IGB50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 175 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.46 EUR
10+4.31 EUR
100+3.31 EUR
500+2.97 EUR
1000+2.5 EUR
2000+2.43 EUR
5000+2.38 EUR
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IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.27 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 Infineon-IGB50N60T-DS-v02_07-EN.pdf
IGB50N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.55 EUR
10+4.31 EUR
100+3.06 EUR
500+2.8 EUR
1000+2.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
10+4.3 EUR
100+3.04 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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IGP50N60T Infineon-IGP50N60T-DS-v02_08-EN.pdf
IGP50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.21 EUR
10+4.07 EUR
100+3.12 EUR
500+2.64 EUR
1000+2.32 EUR
2500+2.18 EUR
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IGP50N60TXKSA1 IGP_W50N60T_Rev2_6G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b856d0d278c6
IGP50N60TXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.14 EUR
50+3.13 EUR
100+2.84 EUR
500+2.33 EUR
1000+2.17 EUR
Mindestbestellmenge: 3
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IGP50N60TXKSA1 Infineon-IGP50N60T-DS-v02_08-EN.pdf
IGP50N60TXKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 1343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.18 EUR
10+3.85 EUR
100+2.99 EUR
500+2.8 EUR
1000+2.62 EUR
2500+2.5 EUR
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IGW50N60H3 IGW50N60H3_2_2.pdf
IGW50N60H3
Hersteller: Infineon Technologies
IGBTs 600V 50A 333W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.08 EUR
10+3.94 EUR
100+3.68 EUR
480+2.64 EUR
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IGW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.6 EUR
27+2.7 EUR
28+2.56 EUR
30+2.47 EUR
Mindestbestellmenge: 20
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IGW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+3.6 EUR
27+2.7 EUR
28+2.56 EUR
30+2.47 EUR
Mindestbestellmenge: 20
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IGW50N60H3FKSA1 IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af
Hersteller: Infineon
IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+14.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af
IGW50N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.06 EUR
30+3.93 EUR
Mindestbestellmenge: 3
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IGW50N60T Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.51 EUR
10+4.28 EUR
100+3.19 EUR
480+2.85 EUR
1200+2.43 EUR
2640+2.29 EUR
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IGW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
17+4.23 EUR
18+4 EUR
30+3.85 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 116 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
14+5.22 EUR
17+4.23 EUR
18+4 EUR
30+3.85 EUR
Mindestbestellmenge: 14
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IGW50N60TFKSA1 INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw
IGW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.37 EUR
30+3.52 EUR
Mindestbestellmenge: 3
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IGW50N60TFKSA1 Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 187 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.58 EUR
10+4.28 EUR
100+3.19 EUR
480+2.78 EUR
1200+2.53 EUR
2640+2.46 EUR
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IGW50N60TPXKSA1 Infineon-IGW50N60TP-DS-v02_01-EN.pdf?fileId=5546d46269bda8df0169c912513c1b5b
IGW50N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
30+2.6 EUR
120+2.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+11.91 EUR
9+7.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 Infineon-IKFW50N60DH3E-DS-v02_01-EN.pdf?fileId=5546d462602a9dc8016034ff1f782dfb
IKFW50N60DH3EXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 40A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/174ns
Switching Energy: 1.28mJ (on), 560µJ (off)
Test Condition: 400V, 40A, 8Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 130 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.2 EUR
30+4.61 EUR
120+3.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3EXKSA1 Infineon-IKFW50N60DH3E-DataSheet-v02_01-EN.pdf
IKFW50N60DH3EXKSA1
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES 14
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.04 EUR
10+4.63 EUR
100+3.5 EUR
480+3.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3XKSA1 Infineon-IKFW50N60DH3-DataSheet-v02_01-EN.pdf
IKFW50N60DH3XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 117 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.32 EUR
10+6.92 EUR
100+6.02 EUR
480+4.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 Infineon_IKFW50N60ET_DS_v02_01_EN.pdf
IKFW50N60ETXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.47 EUR
10+7.62 EUR
100+6.53 EUR
480+6.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2
IKFW50N60ETXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.16 EUR
30+7.7 EUR
120+6.5 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 159.6W
Case: TO247-3
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 61A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 505 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 Infineon_IKW50N60DTP_DataSheet_v02_01_EN.pdf
IKW50N60DTPXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY 14
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.65 EUR
10+3.08 EUR
100+2.57 EUR
480+1.95 EUR
1200+1.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1
IKW50N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3 Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf
IKW50N60H3
Hersteller: Infineon Technologies
IGBTs HIGH SPEED SWITCHING
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.3 EUR
10+5.84 EUR
100+4.72 EUR
480+4.19 EUR
1200+3.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 328 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.71 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea
IKW50N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.5 EUR
30+4.8 EUR
120+3.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+13.58 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+13.58 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 405 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.66 EUR
10+6.55 EUR
100+5.28 EUR
480+4.7 EUR
1200+4.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+7.56 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 194 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
15+4.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.34 EUR
15+4.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.26 EUR
30+5.26 EUR
120+4.38 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.28 EUR
10+5.28 EUR
100+4.17 EUR
480+3.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFH50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.14 EUR
8+9.18 EUR
9+8.68 EUR
30+8.35 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFH50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 342 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.14 EUR
8+9.18 EUR
9+8.68 EUR
30+8.35 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFx50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 1226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.32 EUR
30+10.37 EUR
120+8.84 EUR
510+8.32 EUR
Mindestbestellmenge: 2
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IXFH50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFH50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+16.7 EUR
10+10.07 EUR
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IXFQ50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFQ50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+13.74 EUR
8+9.02 EUR
9+8.52 EUR
120+8.21 EUR
Mindestbestellmenge: 6
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IXFQ50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFQ50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+13.74 EUR
8+9.02 EUR
9+8.52 EUR
120+8.21 EUR
Mindestbestellmenge: 6
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IXFT50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
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IXFT50N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A285B3A6FAECB820&compId=IXFH(T%2CQ)50N60P3.pdf?ci_sign=7215fc777fa1c68d55c2b5e1b4f1af550f824e8d
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 241 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+12.97 EUR
7+10.64 EUR
8+10.05 EUR
Mindestbestellmenge: 6
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IXFT50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFT50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.96 EUR
10+13.45 EUR
120+12.5 EUR
510+11.4 EUR
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IXFT50N60P3 IXFx50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.83 EUR
30+11.35 EUR
120+9.71 EUR
510+9.27 EUR
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IXFT50N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+16.43 EUR
7+11.11 EUR
Mindestbestellmenge: 5
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IXFT50N60X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4BFA14AED1820&compId=IXFH(Q%2CT)50N60X.pdf?ci_sign=4f276076f8a13b14449da0ce3f84380c73548c0a
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 14 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+16.43 EUR
7+11.11 EUR
Mindestbestellmenge: 5
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IXXA50N60B3
IXXA50N60B3
Hersteller: IXYS
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+8.56 EUR
Mindestbestellmenge: 300
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IXXH150N60C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB84B2D4667820&compId=IXXH150N60C3.pdf?ci_sign=e2edc0f05d79079a7a3e1b1ee77b81648e551054
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
auf Bestellung 241 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+17.79 EUR
6+12.07 EUR
Mindestbestellmenge: 5
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