Suchergebnisse für "50n60" : > 60

Wählen Sie Seite:   1 2  [ Nächste Seite >> ]
Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SGW50N60HS SGW50N60HS
Produktcode: 217211
zu Favoriten hinzufügen Lieblingsprodukt
China Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 9 St.:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SGW50N60HS SGW50N60HS
Produktcode: 73803
zu Favoriten hinzufügen Lieblingsprodukt
Infineon Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 11 St.:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon_AIKW50N60CT_DS_v02_01_EN.pdf IGBTs DISCRETES
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.46 EUR
10+8.82 EUR
100+8.17 EUR
480+8.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 Infineon Technologies Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1 Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.67 EUR
10+9.82 EUR
30+8.99 EUR
120+8.24 EUR
270+7.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 FDBL0150N60 onsemi fdbl0150n60-d.pdf Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1118 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.1 EUR
10+9.63 EUR
100+7.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 FDBL0150N60 onsemi fdbl0150n60-d.pdf MOSFETs Update code D
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.75 EUR
10+9.7 EUR
100+8.08 EUR
500+7.2 EUR
1000+6.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 Fairchild Semiconductor fdbl0150n60-d.pdf Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
59+7.64 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60T IGB50N60T Infineon Technologies Infineon_IGB50N60T_DS_v02_07_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.48 EUR
10+5.53 EUR
100+4.33 EUR
500+3.77 EUR
1000+3.19 EUR
2000+3.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies Infineon_IGB50N60T_DS_v02_07_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.74 EUR
10+4.45 EUR
100+3.17 EUR
500+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.87 EUR
2000+2.71 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60TATMA1 Infineon Technologies IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55 Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2591 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.87 EUR
10+5.22 EUR
100+3.72 EUR
500+3.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3 IGW50N60H3 Infineon Technologies IGW50N60H3_2_2.pdf IGBTs 600V 50A 333W
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.08 EUR
10+3.94 EUR
100+3.26 EUR
480+2.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES IGW50N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.9 EUR
18+3.99 EUR
21+3.47 EUR
30+2.77 EUR
60+2.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 Infineon IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
2+14.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3FKSA1 Infineon Technologies IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60T IGW50N60T Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.53 EUR
10+4.28 EUR
100+3.2 EUR
480+2.85 EUR
1200+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES IGW50N60T-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.35 EUR
19+3.9 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.69 EUR
30+3.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60TFKSA1 Infineon Technologies Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.39 EUR
10+3.52 EUR
100+3.2 EUR
480+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TPXKSA1 IGW50N60TPXKSA1 Infineon Technologies Infineon-IGW50N60TP-DS-v02_01-EN.pdf?fileId=5546d46269bda8df0169c912513c1b5b Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
30+2.58 EUR
120+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3XKSA1 IKFW50N60DH3XKSA1 Infineon Technologies Infineon_IKFW50N60DH3_DataSheet_v02_01_EN.pdf IGBTs INDUSTRY
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.76 EUR
10+8.73 EUR
100+7.36 EUR
480+6.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 Infineon Technologies Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2 Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.14 EUR
30+9.56 EUR
120+8.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 Infineon Technologies Infineon_IKW50N60DTP_DataSheet_v02_01_EN.pdf IGBTs INDUSTRY
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.77 EUR
10+3.71 EUR
100+2.94 EUR
480+2.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 Infineon Technologies Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.91 EUR
30+3.23 EUR
120+2.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3 Infineon INFNS30194-1.pdf?t.download=true&u=5oefqw Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;   IKW50N60H3 TIKW50n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
5+8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3 IKW50N60H3 Infineon Technologies Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf IGBTs HIGH SPEED SWITCHING
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.8 EUR
10+6.44 EUR
100+4.73 EUR
480+4.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES IKW50N60H3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.81 EUR
19+3.9 EUR
30+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 Infineon Technologies IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.82 EUR
30+5.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3FKSA1 Infineon Technologies Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf IGBTs HIGH SPEED SWITCHING
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.52 EUR
10+4.8 EUR
100+4.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T Infineon INFNS30103-1.pdf?t.download=true&u=5oefqw Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
4+11.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T Infineon INFNS30103-1.pdf?t.download=true&u=5oefqw Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
4+11.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T IKW50N60T Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.25 EUR
10+7.48 EUR
100+6.05 EUR
480+5.37 EUR
1200+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TAFKSA1 IKW50N60TAFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
60+7.49 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES IKW50N60T-dte.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.26 EUR
18+4.19 EUR
30+3.86 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21 Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.74 EUR
30+6.15 EUR
120+5.14 EUR
510+4.4 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60TFKSA1 Infineon Technologies Infineon_IKW50N60T_DS_v02_06_EN.pdf IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.35 EUR
10+6.23 EUR
100+5.21 EUR
480+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.43 EUR
8+9.67 EUR
10+8.62 EUR
30+8.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.37 EUR
30+10.99 EUR
120+9.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.35 EUR
10+10.4 EUR
120+10.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFQ50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.74 EUR
10+10.54 EUR
30+8.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFQ50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
1+17.6 EUR
30+10.5 EUR
120+8.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.64 EUR
10+10.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFT50N60P3 IXYS IXFx50N60P3.pdf Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.96 EUR
30+12.03 EUR
120+10.3 EUR
510+9.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFT50N60P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
1+18.88 EUR
10+13.57 EUR
120+11.4 EUR
510+11.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.23 EUR
6+13.71 EUR
10+12.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXA50N60B3 IXXA50N60B3 IXYS media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
300+10.45 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.32 EUR
10+13.38 EUR
30+12.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 IXXH150N60C3 IXYS littelfusediscreteigbtsxptixxh150n60c3datashe.pdf Description: IGBT PT 600V 300A TO-247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.41 EUR
30+14.33 EUR
120+12.34 EUR
510+11.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 IXXH150N60C3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXH150N60C3_Datasheet.PDF IGBTs TO247 600V 150A XPT
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.81 EUR
10+16.42 EUR
120+14.12 EUR
510+13.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3 IXXH50N60B3 IXYS littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170 Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.13 EUR
30+12.16 EUR
120+10.41 EUR
510+9.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3 IXXH50N60B3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXX_50N60B3_Datasheet.PDF IGBTs GenX3 600V XPT IGBTs
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.29 EUR
10+12.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3D1 IXXH50N60B3D1 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXH50N60B3D1_Datasheet.PDF IGBTs XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.24 EUR
10+14.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3D1 IXXH50N60B3D1 IXYS DS100302BIXXH50N60B3D1.pdf Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.25 EUR
30+13.54 EUR
120+11.64 EUR
510+10.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60C3D1 IXXH50N60C3D1 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXH50N60C3D1_Datasheet.PDF IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.54 EUR
10+8.59 EUR
120+7.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60C3D1 IXXH50N60C3D1 IXYS littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2 Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.22 EUR
30+8.98 EUR
120+7.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 IXYN150N60B3 IXYS DS100548BIXYN150N60B3.pdf Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
1+42.08 EUR
10+30.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 IXYN150N60B3 IXYS Littelfuse_Discrete_IGBTs_XPT_IXYN150N60B3_Datasheet.PDF IGBTs SOT227 600V 140A GENX3
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
1+40.97 EUR
10+33.93 EUR
100+33.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60FWG NGTB50N60FWG onsemi ngtb50n60fw-d.pdf Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
auf Bestellung 10950 Stücke:
Lieferzeit 10-14 Tag (e)
76+5.88 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60S1WG NGTB50N60S1WG onsemi NGTB50N60S1WG.pdf Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
81+5.52 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60SWG NGTB50N60SWG onsemi ngtb50n60sw-d.pdf Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
91+4.94 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
SGW50N60HS
Produktcode: 217211
zu Favoriten hinzufügen Lieblingsprodukt
SGW50N60HS
Hersteller: China
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 9 St.:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SGW50N60HS
Produktcode: 73803
zu Favoriten hinzufügen Lieblingsprodukt
SGW50N60HS
Hersteller: Infineon
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247-3
Vces: 600 V
Vce: 2,8 V
Ic 25: 100 A
Ic 100: 50 A
auf Bestellung 11 St.:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 Infineon_AIKW50N60CT_DS_v02_01_EN.pdf
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
IGBTs DISCRETES
auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.46 EUR
10+8.82 EUR
100+8.17 EUR
480+8.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AIKW50N60CTXKSA1 Infineon-AIKW50N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382c6127ca1
AIKW50N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
Qualification: AEC-Q101
auf Bestellung 353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.67 EUR
10+9.82 EUR
30+8.99 EUR
120+8.24 EUR
270+7.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 fdbl0150n60-d.pdf
FDBL0150N60
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 1118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.1 EUR
10+9.63 EUR
100+7.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 fdbl0150n60-d.pdf
FDBL0150N60
Hersteller: onsemi
MOSFETs Update code D
auf Bestellung 767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.75 EUR
10+9.7 EUR
100+8.08 EUR
500+7.2 EUR
1000+6.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: Fairchild Semiconductor
Description: FDBL0150N60 - N-CHANNEL POWERTRE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+7.64 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60T Infineon_IGB50N60T_DS_v02_07_EN.pdf
IGB50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.48 EUR
10+5.53 EUR
100+4.33 EUR
500+3.77 EUR
1000+3.19 EUR
2000+3.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 Infineon_IGB50N60T_DS_v02_07_EN.pdf
IGB50N60TATMA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.74 EUR
10+4.45 EUR
100+3.17 EUR
500+3.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.87 EUR
2000+2.71 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IGB50N60TATMA1 IGB50N60T_Rev2_5G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42812613d55
IGB50N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 100A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 2591 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.87 EUR
10+5.22 EUR
100+3.72 EUR
500+3.32 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3 IGW50N60H3_2_2.pdf
IGW50N60H3
Hersteller: Infineon Technologies
IGBTs 600V 50A 333W
auf Bestellung 362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.08 EUR
10+3.94 EUR
100+3.26 EUR
480+2.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3-DTE.pdf
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Manufacturer series: H3
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 72 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.9 EUR
18+3.99 EUR
21+3.47 EUR
30+2.77 EUR
60+2.43 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af
Hersteller: Infineon
IGBT 600V 100A 333W IGW50N60H3FKSA1 IGW50N60H3 TIGW50n60h3
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+14.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60H3FKSA1 IGW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126bc64524041af
IGW50N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.43 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60T Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.53 EUR
10+4.28 EUR
100+3.2 EUR
480+2.85 EUR
1200+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 IGW50N60T-DTE.pdf
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 64A
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.35 EUR
19+3.9 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw
IGW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.69 EUR
30+3.69 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TFKSA1 Infineon_IGW50N60T_DataSheet_v02_08_EN.pdf
IGW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS IGBT TECH 600V 50A
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.39 EUR
10+3.52 EUR
100+3.2 EUR
480+2.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IGW50N60TPXKSA1 Infineon-IGW50N60TP-DS-v02_01-EN.pdf?fileId=5546d46269bda8df0169c912513c1b5b
IGW50N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
30+2.58 EUR
120+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60DH3XKSA1 Infineon_IKFW50N60DH3_DataSheet_v02_01_EN.pdf
IKFW50N60DH3XKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+12.76 EUR
10+8.73 EUR
100+7.36 EUR
480+6.2 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW50N60ETXKSA1 Infineon-IKFW50N60ET-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e88a432b2
IKFW50N60ETXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 73A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 91 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-AI
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/305ns
Switching Energy: 1.5mJ (on), 1.42mJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 290 nC
Part Status: Active
Current - Collector (Ic) (Max): 73 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 164 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.14 EUR
30+9.56 EUR
120+8.12 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 Infineon_IKW50N60DTP_DataSheet_v02_01_EN.pdf
IKW50N60DTPXKSA1
Hersteller: Infineon Technologies
IGBTs INDUSTRY
auf Bestellung 861 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.77 EUR
10+3.71 EUR
100+2.94 EUR
480+2.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60DTPXKSA1 Infineon-IKW50N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbc2c1c17cc1
IKW50N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/215ns
Switching Energy: 1.53mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 249 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319.2 W
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.91 EUR
30+3.23 EUR
120+2.64 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3 INFNS30194-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;   IKW50N60H3 TIKW50n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+8 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3 Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf
IKW50N60H3
Hersteller: Infineon Technologies
IGBTs HIGH SPEED SWITCHING
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.8 EUR
10+6.44 EUR
100+4.73 EUR
480+4.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3.pdf
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.81 EUR
19+3.9 EUR
30+3.58 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 IKW50N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432a40a650012a47934b1e2bea
IKW50N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/235ns
Switching Energy: 2.36mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 315 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 333 W
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.82 EUR
30+5.58 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60H3FKSA1 Infineon_IKW50N60H3_DataSheet_v02_02_EN.pdf
IKW50N60H3FKSA1
Hersteller: Infineon Technologies
IGBTs HIGH SPEED SWITCHING
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.52 EUR
10+4.8 EUR
100+4.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+11.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T INFNS30103-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1 IKW50N60T TIKW50n60t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
4+11.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60T Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60T
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+11.25 EUR
10+7.48 EUR
100+6.05 EUR
480+5.37 EUR
1200+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TAFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TAFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 9853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+7.49 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T-dte.pdf
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Gate-emitter voltage: ±20V
Collector current: 50A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.26 EUR
18+4.19 EUR
30+3.86 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 IKW50N60T+Rev2_4G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4288ce93e21
IKW50N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 143 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/299ns
Switching Energy: 2.6mJ
Test Condition: 400V, 50A, 7Ohm, 15V
Gate Charge: 310 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 333 W
auf Bestellung 810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.74 EUR
30+6.15 EUR
120+5.14 EUR
510+4.4 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IKW50N60TFKSA1 Infineon_IKW50N60T_DS_v02_06_EN.pdf
IKW50N60TFKSA1
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 50A
auf Bestellung 605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.35 EUR
10+6.23 EUR
100+5.21 EUR
480+4.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFH(T,Q)50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO247-3
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.43 EUR
8+9.67 EUR
10+8.62 EUR
30+8.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 IXFx50N60P3.pdf
IXFH50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.37 EUR
30+10.99 EUR
120+9.38 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFH50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFH50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 338 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.35 EUR
10+10.4 EUR
120+10.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFH(T,Q)50N60P3.pdf
IXFQ50N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.74 EUR
10+10.54 EUR
30+8.19 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFQ50N60P3 IXFx50N60P3.pdf
IXFQ50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+17.6 EUR
30+10.5 EUR
120+8.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.64 EUR
10+10.58 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 IXFx50N60P3.pdf
IXFT50N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 50A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 500mA, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
auf Bestellung 851 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.96 EUR
30+12.03 EUR
120+10.3 EUR
510+9.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_50N60P3_Datasheet.PDF
IXFT50N60P3
Hersteller: IXYS
MOSFETs 600V 50A 0.145Ohm PolarP3 Power MOSFET
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.88 EUR
10+13.57 EUR
120+11.4 EUR
510+11.23 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 195ns
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.23 EUR
6+13.71 EUR
10+12.08 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXA50N60B3 media?resourcetype=datasheets&itemid=0584ED69-861C-477C-9ED3-244C01C8D170&filename=Littelfuse-Discrete-IGBTs-XPT-IXX-50N60B3-Datasheet.PDF
IXXA50N60B3
Hersteller: IXYS
Description: IGBT 600V 120A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 27ns/150ns
Switching Energy: 670µJ (on), 1.2mJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
300+10.45 EUR
Mindestbestellmenge: 300
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Pulsed collector current: 700A
Collector-emitter voltage: 600V
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.32 EUR
10+13.38 EUR
30+12.04 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 littelfusediscreteigbtsxptixxh150n60c3datashe.pdf
IXXH150N60C3
Hersteller: IXYS
Description: IGBT PT 600V 300A TO-247AD
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 150A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/120ns
Switching Energy: 3.4mJ (on), 1.8mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 200 nC
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 1360 W
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.41 EUR
30+14.33 EUR
120+12.34 EUR
510+11.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH150N60C3 Littelfuse_Discrete_IGBTs_XPT_IXXH150N60C3_Datasheet.PDF
IXXH150N60C3
Hersteller: IXYS
IGBTs TO247 600V 150A XPT
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.81 EUR
10+16.42 EUR
120+14.12 EUR
510+13.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3 littelfuse-discrete-igbts-ixx-50n60b3-datasheet?assetguid=0584ed69-861c-477c-9ed3-244c01c8d170
IXXH50N60B3
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.13 EUR
30+12.16 EUR
120+10.41 EUR
510+9.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3 Littelfuse_Discrete_IGBTs_XPT_IXX_50N60B3_Datasheet.PDF
IXXH50N60B3
Hersteller: IXYS
IGBTs GenX3 600V XPT IGBTs
auf Bestellung 301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.29 EUR
10+12.72 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3D1 Littelfuse_Discrete_IGBTs_XPT_IXXH50N60B3D1_Datasheet.PDF
IXXH50N60B3D1
Hersteller: IXYS
IGBTs XPT 600V IGBT GenX3 XPT IGBT
auf Bestellung 409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.24 EUR
10+14.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60B3D1 DS100302BIXXH50N60B3D1.pdf
IXXH50N60B3D1
Hersteller: IXYS
Description: IGBT PT 600V 120A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 27ns/100ns
Switching Energy: 670µJ (on), 740µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.25 EUR
30+13.54 EUR
120+11.64 EUR
510+10.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60C3D1 Littelfuse_Discrete_IGBTs_XPT_IXXH50N60C3D1_Datasheet.PDF
IXXH50N60C3D1
Hersteller: IXYS
IGBTs XPT IGBT C3-Class 600V/100Amp CoPacked
auf Bestellung 475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.54 EUR
10+8.59 EUR
120+7.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXXH50N60C3D1 littelfuse-discrete-igbts-ixxh50n60c3d1-datasheet?assetguid=f95c77ee-e30c-40a0-add2-d813f16ccfd2
IXXH50N60C3D1
Hersteller: IXYS
Description: IGBT PT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 24ns/62ns
Switching Energy: 720µJ (on), 330µJ (off)
Test Condition: 360V, 36A, 5Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 600 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.22 EUR
30+8.98 EUR
120+7.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 DS100548BIXYN150N60B3.pdf
IXYN150N60B3
Hersteller: IXYS
Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.08 EUR
10+30.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 Littelfuse_Discrete_IGBTs_XPT_IXYN150N60B3_Datasheet.PDF
IXYN150N60B3
Hersteller: IXYS
IGBTs SOT227 600V 140A GENX3
auf Bestellung 209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+40.97 EUR
10+33.93 EUR
100+33.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60FWG ngtb50n60fw-d.pdf
NGTB50N60FWG
Hersteller: onsemi
Description: IGBT 600V 100A 223W TO247
Packaging: Tube
Part Status: Obsolete
auf Bestellung 10950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
76+5.88 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60S1WG NGTB50N60S1WG.pdf
NGTB50N60S1WG
Hersteller: onsemi
Description: IGBT TRENCH 600V 100A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 94 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 100ns/237ns
Switching Energy: 1.5mJ (on), 460µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 417 W
auf Bestellung 1080 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
81+5.52 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
NGTB50N60SWG ngtb50n60sw-d.pdf
NGTB50N60SWG
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 100A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 376 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 70ns/144ns
Switching Energy: 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 135 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
auf Bestellung 1530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+4.94 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   1 2  [ Nächste Seite >> ]