| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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DG202BDJ-E3 | VISHAY |
 Category: Analog multiplexers and switchesDescription: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube Type of integrated circuit: analog switch Output configuration: SPST-NO Number of channels: 4 Case: DIP16 Supply voltage: 7...22V; 13...36V Mounting: THT Kind of package: tube Resistance: 50Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQD40131EL_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 62W; DPAK,TO252AA Mounting: SMD Case: DPAK; TO252AA Polarisation: unipolar Drain current: -50A Kind of channel: enhancement Drain-source voltage: -40V Application: automotive industry Type of transistor: P-MOSFET On-state resistance: 11.5mΩ Power dissipation: 62W Gate charge: 76nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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CRCW120662K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 62kΩ; SMD; 1206; 250mW; ±1%; 3.2x1.6mm Type of resistor: thick film Resistance: 62kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Mounting: SMD Body dimensions: 3.2x1.6mm Max. operating voltage: 200V |
auf Bestellung 34500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VS-40TPS16-M3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AC-3; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 55A Load current: 35A Gate current: 150mA Case: TO247AC-3 Mounting: THT Kind of package: tube Max. forward impulse current: 420A |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| VS-40TPS16LHM3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 55A Load current: 35A Gate current: 150mA Case: TO247AD-3 Mounting: THT Kind of package: tube Max. forward impulse current: 420A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| VS-40TPS16L-M3 | VISHAY |
Category: SMD/THT thyristors Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 55A Load current: 35A Gate current: 150mA Case: TO247AD-3 Mounting: THT Kind of package: tube Max. forward impulse current: 420A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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TSOP4856 | VISHAY |
 Category: IR receiver modulesDescription: Integrated IR receiver; 56kHz; 4.5÷5.5V; 45° Type of photoelement: integrated IR receiver Frequency: 56kHz Mounting: THT Supply voltage: 4.5...5.5V Viewing angle: 45° Connector variant: straight |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRF710PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 36W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 528 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF710STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W Polarisation: unipolar Case: D2PAK; TO263 On-state resistance: 3.6Ω Mounting: SMD Pulsed drain current: 6A Power dissipation: 36W Gate charge: 17nC Drain current: 1.2A Kind of channel: enhancement Drain-source voltage: 400V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
auf Bestellung 606 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRF710SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 36W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MAL213837221E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 220uF; 40VDC; Ø10x25mm; ±20% Mounting: THT Operating voltage: 40V DC Tolerance: ±20% Diameter: 10mm Kind of capacitor: low ESR Service life: 2000h Operating temperature: -40...105°C Leads: axial Body dimensions: Ø10x25mm Type of capacitor: electrolytic Capacitance: 220µF Height: 25mm |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| D2TO020CR6800FRE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; SMD; TO263; 680mΩ; 25W; ±1%; 500V; -55÷155°C Operating voltage: 500V Mounting: SMD Case: TO263 Tolerance: ±1% Operating temperature: -55...155°C Type of resistor: thick film Resistance: 0.68Ω Power: 25W Conform to the norm: AEC-Q200 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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MAL211890513E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 100uF; 63VDC; Ø10x25mm; ±20% Tolerance: ±20% Diameter: 10mm Mounting: THT Kind of capacitor: low ESR Service life: 4000h Operating temperature: -40...125°C Leads: axial Body dimensions: Ø10x25mm Type of capacitor: electrolytic Capacitance: 100µF Height: 25mm Operating voltage: 63V DC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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IRLL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFL110TRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.96A Pulsed drain current: 12A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3553 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SIHLL110TR-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.93A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±10V On-state resistance: 760mΩ Mounting: SMD Gate charge: 6.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE12A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 89.8A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE |
auf Bestellung 647 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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1.5KE120A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; TransZorb® Type of diode: TVS Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Kind of package: 13 inch reel Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 501 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSC452768R00JEA | VISHAY |
Category: SMD resistors Description: Resistor: wire-wound; 68Ω; SMD; 4527; 2W; ±5%; 11.56x6.98x4.24mm Quantity in set/package: 1200pcs. Type of resistor: wire-wound Mounting: SMD Operating temperature: -65...275°C Resistance: 68Ω Body dimensions: 11.56x6.98x4.24mm Power: 2W Temperature coefficient: 20ppm/°C Roll diameter max.: 330mm Conform to the norm: AEC-Q200 Case - inch: 4527 Tolerance: ±5% |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1200 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WSC45271K000FEA | VISHAY |
Category: SMD resistors Description: WSC45271K000FEA |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1200 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI7315DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -10A Mounting: SMD Type of transistor: P-MOSFET Case: PowerPAK® 1212-8 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Pulsed drain current: -10A Drain current: -8.9A Gate charge: 30nC Power dissipation: 33W On-state resistance: 315mΩ Gate-source voltage: ±30V Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SI4455DY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A Mounting: SMD Case: SO8 On-state resistance: 315mΩ Pulsed drain current: -15A Power dissipation: 3.8W Gate charge: 23.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -2.3A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SI4455DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A Mounting: SMD Case: SO8 On-state resistance: 315mΩ Pulsed drain current: -15A Power dissipation: 3.8W Gate charge: 23.2nC Polarisation: unipolar Technology: TrenchFET® Drain current: -2.3A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SQ2361AEES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 Mounting: SMD Type of transistor: P-MOSFET Case: SOT23 Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -11A Drain current: -2.8A Gate charge: 15nC Power dissipation: 0.67W On-state resistance: 315mΩ Gate-source voltage: ±20V Application: automotive industry Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IRFI9Z24GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: 8.5A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: -34A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SMCJ33CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ Type of diode: TVS Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 7 inch reel; tape Tolerance: ±5% Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated |
auf Bestellung 1645 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMCJ33CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCT06030C1210DP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 121Ω; 0.125W; ±0.5%; MCT0603; 0; 75V Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 121Ω Power: 0.125W Tolerance: ±0.5% Manufacturer series: MCT0603 Version: 0 Operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Roll diameter max.: 180mm |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRLU110PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.3A Pulsed drain current: 17A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.54Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU014PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.9A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±10V On-state resistance: 0.28Ω Mounting: THT Gate charge: 8.4nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1288 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| M32159B06MS2 | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 20mΩ; 150mW; 2.03x1.27x0.51mm; 500pcs. Operating temperature: -65...150°C Body dimensions: 2.03x1.27x0.51mm Resistance: 20mΩ Power: 0.15W Quantity in set/package: 500pcs. Type of resistor: thick film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT06030F7159BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V Operating temperature: -55...155°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.125W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Quantity in set/package: 1000pcs. Case - inch: 0603 Case - mm: 1608 Version: 0 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT06030F7159BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V Operating temperature: -55...155°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.125W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: 0 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT06030F7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V Operating temperature: -55...155°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.125W Roll diameter max.: 330mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: 0 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT0603MF7159BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Quantity in set/package: 1000pcs. Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT0603MF7159BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 180mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| MCT0603MF7159BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V Operating temperature: -55...175°C Resistance: 71.5Ω Tolerance: ±0.1% Power: 0.21W Roll diameter max.: 330mm Temperature coefficient: 10ppm/°C Operating voltage: 75V Case - inch: 0603 Case - mm: 1608 Version: M Conform to the norm: AEC-Q200 Manufacturer series: MCT0603 Type of resistor: thin film Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI8424CDB-T1-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 8V Drain current: 10A Power dissipation: 1.8W Case: MICROFOOT® 1.6x1.6 Gate-source voltage: ±5V On-state resistance: 20mΩ Mounting: SMD Gate charge: 40nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 25A Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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GBPC3506W-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Kind of package: bulk Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
auf Bestellung 155 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GBPC3508-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Max. forward impulse current: 0.4kA Max. forward voltage: 1.1V Version: square Features of semiconductor devices: glass passivated Leads: connectors FASTON Max. off-state voltage: 0.8kV Electrical mounting: THT Load current: 35A Kind of package: bulk Case: GBPC Type of bridge rectifier: single-phase |
auf Bestellung 374 Stücke: Lieferzeit 14-21 Tag (e) |
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GBPC3506-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Features of semiconductor devices: glass passivated Kind of package: bulk |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5242B-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 12V; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| 1N5246B-TR | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 500mW; 16V; DO35 Type of diode: Zener Power dissipation: 0.5W Zener voltage: 16V Case: DO35 Mounting: THT Tolerance: ±5% |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BAS386-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel Mounting: SMD Max. forward impulse current: 5A Manufacturer standard package: 2500pcs. Max. forward voltage: 0.3V Features of semiconductor devices: small signal Max. off-state voltage: 50V Load current: 0.2A Max. load current: 0.5A Kind of package: 7 inch reel Semiconductor structure: single diode Case: MicroMELF Capacitance: 8pF Type of diode: Schottky switching |
auf Bestellung 18104 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS385-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel Mounting: SMD Max. forward impulse current: 5A Manufacturer standard package: 2500pcs. Max. forward voltage: 0.8V Features of semiconductor devices: small signal Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Kind of package: 7 inch reel Semiconductor structure: single diode Leakage current: 2.3µA Case: MicroMELF Capacitance: 10pF Type of diode: Schottky switching |
auf Bestellung 8001 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BAS383-TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel Mounting: SMD Max. forward impulse current: 0.5A Manufacturer standard package: 2500pcs. Max. forward voltage: 1V Features of semiconductor devices: small signal Max. off-state voltage: 60V Load current: 30mA Max. load current: 0.15A Kind of package: 7 inch reel Semiconductor structure: single diode Leakage current: 0.2µA Case: MicroMELF Capacitance: 1.6pF Type of diode: Schottky switching |
auf Bestellung 5650 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 20 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VS-42CTQ030S-M3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 30V Load current: 20A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.38V Kind of package: tube Manufacturer standard package: 50pcs. Max. forward impulse current: 360A Max. load current: 40A |
auf Bestellung 1377 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2308CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.6A Pulsed drain current: 6A Power dissipation: 1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 144mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2303CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 1.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2304DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.3A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 2.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI2306BDS-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1503 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SI2306BDS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SI2303CDS-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SI2303CDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -10A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MAL205857472E3 | VISHAY |
Category: SNAP-IN electrolytic capacitors Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20% Mounting: SNAP-IN Service life: 5000h Operating temperature: -40...105°C Body dimensions: Ø30x30mm Type of capacitor: electrolytic Capacitance: 4.7mF Height: 30mm Operating voltage: 40V DC Tolerance: ±20% Diameter: 30mm Terminal pitch: 10mm |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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6N139 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington CTR@If: 2000%@1.6mA Case: DIP8 Turn-on time: 6µs Turn-off time: 1.5µs Collector-emitter voltage: 7V Insulation voltage: 5.3kV |
auf Bestellung 519 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MCS0402MD1691BE000 | VISHAY |
Category: SMD resistors Description: Resistor: thin film Type of resistor: thin film |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SI4946CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.1A Power dissipation: 2.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 51.6mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 25A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| Si4922BDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Case: SO8 Technology: TrenchFET® Gate charge: 62nC On-state resistance: 24mΩ Power dissipation: 3.1W Drain current: 8A Gate-source voltage: ±12V Drain-source voltage: 30V Pulsed drain current: 35A Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DG202BDJ-E3 |
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Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: DIP16
Supply voltage: 7...22V; 13...36V
Mounting: THT
Kind of package: tube
Resistance: 50Ω
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; DIP16; 7÷22V,13÷36V; tube
Type of integrated circuit: analog switch
Output configuration: SPST-NO
Number of channels: 4
Case: DIP16
Supply voltage: 7...22V; 13...36V
Mounting: THT
Kind of package: tube
Resistance: 50Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQD40131EL_GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 62W; DPAK,TO252AA
Mounting: SMD
Case: DPAK; TO252AA
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
On-state resistance: 11.5mΩ
Power dissipation: 62W
Gate charge: 76nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -50A; 62W; DPAK,TO252AA
Mounting: SMD
Case: DPAK; TO252AA
Polarisation: unipolar
Drain current: -50A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
On-state resistance: 11.5mΩ
Power dissipation: 62W
Gate charge: 76nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CRCW120662K0FKEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 62kΩ; SMD; 1206; 250mW; ±1%; 3.2x1.6mm
Type of resistor: thick film
Resistance: 62kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 3.2x1.6mm
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; 62kΩ; SMD; 1206; 250mW; ±1%; 3.2x1.6mm
Type of resistor: thick film
Resistance: 62kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Mounting: SMD
Body dimensions: 3.2x1.6mm
Max. operating voltage: 200V
auf Bestellung 34500 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-40TPS16-M3 |
|
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AC-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AC-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AC-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AC-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-40TPS16LHM3 |
|
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Application: automotive industry
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| VS-40TPS16L-M3 |
|
Hersteller: VISHAY
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 55A; 35A; Igt: 150mA; TO247AD-3; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 55A
Load current: 35A
Gate current: 150mA
Case: TO247AD-3
Mounting: THT
Kind of package: tube
Max. forward impulse current: 420A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TSOP4856 |
|
Hersteller: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 4.5÷5.5V; 45°
Type of photoelement: integrated IR receiver
Frequency: 56kHz
Mounting: THT
Supply voltage: 4.5...5.5V
Viewing angle: 45°
Connector variant: straight
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF710PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 528 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF710STRLPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Polarisation: unipolar
Case: D2PAK; TO263
On-state resistance: 3.6Ω
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 36W
Gate charge: 17nC
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Polarisation: unipolar
Case: D2PAK; TO263
On-state resistance: 3.6Ω
Mounting: SMD
Pulsed drain current: 6A
Power dissipation: 36W
Gate charge: 17nC
Drain current: 1.2A
Kind of channel: enhancement
Drain-source voltage: 400V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 606 Stücke:
Lieferzeit 14-21 Tag (e)
| IRF710SPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 1.2A; Idm: 6A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 36W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| MAL213837221E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 220uF; 40VDC; Ø10x25mm; ±20%
Mounting: THT
Operating voltage: 40V DC
Tolerance: ±20%
Diameter: 10mm
Kind of capacitor: low ESR
Service life: 2000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø10x25mm
Type of capacitor: electrolytic
Capacitance: 220µF
Height: 25mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 220uF; 40VDC; Ø10x25mm; ±20%
Mounting: THT
Operating voltage: 40V DC
Tolerance: ±20%
Diameter: 10mm
Kind of capacitor: low ESR
Service life: 2000h
Operating temperature: -40...105°C
Leads: axial
Body dimensions: Ø10x25mm
Type of capacitor: electrolytic
Capacitance: 220µF
Height: 25mm
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)
| D2TO020CR6800FRE3 |
|
Hersteller: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 680mΩ; 25W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Case: TO263
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 0.68Ω
Power: 25W
Conform to the norm: AEC-Q200
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 680mΩ; 25W; ±1%; 500V; -55÷155°C
Operating voltage: 500V
Mounting: SMD
Case: TO263
Tolerance: ±1%
Operating temperature: -55...155°C
Type of resistor: thick film
Resistance: 0.68Ω
Power: 25W
Conform to the norm: AEC-Q200
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| MAL211890513E3 |
|
Hersteller: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 63VDC; Ø10x25mm; ±20%
Tolerance: ±20%
Diameter: 10mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 4000h
Operating temperature: -40...125°C
Leads: axial
Body dimensions: Ø10x25mm
Type of capacitor: electrolytic
Capacitance: 100µF
Height: 25mm
Operating voltage: 63V DC
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 100uF; 63VDC; Ø10x25mm; ±20%
Tolerance: ±20%
Diameter: 10mm
Mounting: THT
Kind of capacitor: low ESR
Service life: 4000h
Operating temperature: -40...125°C
Leads: axial
Body dimensions: Ø10x25mm
Type of capacitor: electrolytic
Capacitance: 100µF
Height: 25mm
Operating voltage: 63V DC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLL110TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFL110TRPBF |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.96A; Idm: 12A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.96A
Pulsed drain current: 12A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3553 Stücke:
Lieferzeit 14-21 Tag (e)
| SIHLL110TR-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.93A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.93A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±10V
On-state resistance: 760mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| 1.5KE12A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 89.8A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 89.8A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
auf Bestellung 647 Stücke:
Lieferzeit 14-21 Tag (e)
| 1.5KE120A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Max. off-state voltage: 102V
Breakdown voltage: 120V
Max. forward impulse current: 9.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Kind of package: 13 inch reel
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 501 Stücke:
Lieferzeit 14-21 Tag (e)
| WSC452768R00JEA |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: wire-wound; 68Ω; SMD; 4527; 2W; ±5%; 11.56x6.98x4.24mm
Quantity in set/package: 1200pcs.
Type of resistor: wire-wound
Mounting: SMD
Operating temperature: -65...275°C
Resistance: 68Ω
Body dimensions: 11.56x6.98x4.24mm
Power: 2W
Temperature coefficient: 20ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Case - inch: 4527
Tolerance: ±5%
Category: SMD resistors
Description: Resistor: wire-wound; 68Ω; SMD; 4527; 2W; ±5%; 11.56x6.98x4.24mm
Quantity in set/package: 1200pcs.
Type of resistor: wire-wound
Mounting: SMD
Operating temperature: -65...275°C
Resistance: 68Ω
Body dimensions: 11.56x6.98x4.24mm
Power: 2W
Temperature coefficient: 20ppm/°C
Roll diameter max.: 330mm
Conform to the norm: AEC-Q200
Case - inch: 4527
Tolerance: ±5%
Produkt ist nicht verfügbar
Mindestbestellmenge: 1200 Stücke
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| WSC45271K000FEA |
|
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| SI7315DN-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -10A
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -10A
Drain current: -8.9A
Gate charge: 30nC
Power dissipation: 33W
On-state resistance: 315mΩ
Gate-source voltage: ±30V
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -8.9A; Idm: -10A
Mounting: SMD
Type of transistor: P-MOSFET
Case: PowerPAK® 1212-8
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Pulsed drain current: -10A
Drain current: -8.9A
Gate charge: 30nC
Power dissipation: 33W
On-state resistance: 315mΩ
Gate-source voltage: ±30V
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI4455DY-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Case: SO8
On-state resistance: 315mΩ
Pulsed drain current: -15A
Power dissipation: 3.8W
Gate charge: 23.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Case: SO8
On-state resistance: 315mΩ
Pulsed drain current: -15A
Power dissipation: 3.8W
Gate charge: 23.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SI4455DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Case: SO8
On-state resistance: 315mΩ
Pulsed drain current: -15A
Power dissipation: 3.8W
Gate charge: 23.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -2.3A; Idm: -15A
Mounting: SMD
Case: SO8
On-state resistance: 315mΩ
Pulsed drain current: -15A
Power dissipation: 3.8W
Gate charge: 23.2nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -2.3A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SQ2361AEES-T1_GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -11A
Drain current: -2.8A
Gate charge: 15nC
Power dissipation: 0.67W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23
Mounting: SMD
Type of transistor: P-MOSFET
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -11A
Drain current: -2.8A
Gate charge: 15nC
Power dissipation: 0.67W
On-state resistance: 315mΩ
Gate-source voltage: ±20V
Application: automotive industry
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IRFI9Z24GPBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -34A
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: -34A
Produkt ist nicht verfügbar
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| SMCJ33CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 7 inch reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
auf Bestellung 1645 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ33CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.1A; bidirectional; ±5%; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| MCT06030C1210DP500 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 121Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 121Ω; 0.125W; ±0.5%; MCT0603; 0; 75V
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.125W
Tolerance: ±0.5%
Manufacturer series: MCT0603
Version: 0
Operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Roll diameter max.: 180mm
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| IRLU110PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.3A; Idm: 17A; 25W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.3A
Pulsed drain current: 17A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.54Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| IRLU014PBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.9A; 25W; IPAK,TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.9A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±10V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 8.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1288 Stücke:
Lieferzeit 14-21 Tag (e)
| M32159B06MS2 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 20mΩ; 150mW; 2.03x1.27x0.51mm; 500pcs.
Operating temperature: -65...150°C
Body dimensions: 2.03x1.27x0.51mm
Resistance: 20mΩ
Power: 0.15W
Quantity in set/package: 500pcs.
Type of resistor: thick film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 20mΩ; 150mW; 2.03x1.27x0.51mm; 500pcs.
Operating temperature: -65...150°C
Body dimensions: 2.03x1.27x0.51mm
Resistance: 20mΩ
Power: 0.15W
Quantity in set/package: 500pcs.
Type of resistor: thick film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| MCT06030F7159BP100 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| MCT06030F7159BP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| MCT06030F7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.125W; ±0.1%; MCT0603; 0; 75V
Operating temperature: -55...155°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.125W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: 0
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 20000 Stücke
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| MCT0603MF7159BP100 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Quantity in set/package: 1000pcs.
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| MCT0603MF7159BP500 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 180mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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Stück im Wert von UAH
| MCT0603MF7159BPW00 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 71.5Ω; 0.21W; ±0.1%; MCT0603; M; 75V
Operating temperature: -55...175°C
Resistance: 71.5Ω
Tolerance: ±0.1%
Power: 0.21W
Roll diameter max.: 330mm
Temperature coefficient: 10ppm/°C
Operating voltage: 75V
Case - inch: 0603
Case - mm: 1608
Version: M
Conform to the norm: AEC-Q200
Manufacturer series: MCT0603
Type of resistor: thin film
Mounting: SMD
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| SI8424CDB-T1-E1 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 10A
Power dissipation: 1.8W
Case: MICROFOOT® 1.6x1.6
Gate-source voltage: ±5V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 25A
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 10A; Idm: 25A; 1.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 8V
Drain current: 10A
Power dissipation: 1.8W
Case: MICROFOOT® 1.6x1.6
Gate-source voltage: ±5V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 40nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 25A
Technology: TrenchFET®
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| GBPC3506W-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Kind of package: bulk
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
auf Bestellung 155 Stücke:
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| GBPC3508-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: square
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 35A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Max. forward impulse current: 0.4kA
Max. forward voltage: 1.1V
Version: square
Features of semiconductor devices: glass passivated
Leads: connectors FASTON
Max. off-state voltage: 0.8kV
Electrical mounting: THT
Load current: 35A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
auf Bestellung 374 Stücke:
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| GBPC3506-E4/51 |
|
Hersteller: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Features of semiconductor devices: glass passivated
Kind of package: bulk
auf Bestellung 207 Stücke:
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| 1N5242B-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 12V; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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| 1N5246B-TR |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 500mW; 16V; DO35
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Case: DO35
Mounting: THT
Tolerance: ±5%
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS386-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Load current: 0.2A
Max. load current: 0.5A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: MicroMELF
Capacitance: 8pF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 50V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.3V
Features of semiconductor devices: small signal
Max. off-state voltage: 50V
Load current: 0.2A
Max. load current: 0.5A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Case: MicroMELF
Capacitance: 8pF
Type of diode: Schottky switching
auf Bestellung 18104 Stücke:
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| BAS385-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 2.3µA
Case: MicroMELF
Capacitance: 10pF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 30V; 0.2A; 7 inch reel
Mounting: SMD
Max. forward impulse current: 5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 0.8V
Features of semiconductor devices: small signal
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 2.3µA
Case: MicroMELF
Capacitance: 10pF
Type of diode: Schottky switching
auf Bestellung 8001 Stücke:
Lieferzeit 14-21 Tag (e)
| BAS383-TR |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Max. forward impulse current: 0.5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Load current: 30mA
Max. load current: 0.15A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Capacitance: 1.6pF
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MicroMELF; SMD; 60V; 30mA; 7 inch reel
Mounting: SMD
Max. forward impulse current: 0.5A
Manufacturer standard package: 2500pcs.
Max. forward voltage: 1V
Features of semiconductor devices: small signal
Max. off-state voltage: 60V
Load current: 30mA
Max. load current: 0.15A
Kind of package: 7 inch reel
Semiconductor structure: single diode
Leakage current: 0.2µA
Case: MicroMELF
Capacitance: 1.6pF
Type of diode: Schottky switching
auf Bestellung 5650 Stücke:
Lieferzeit 14-21 Tag (e)
| VS-42CTQ030S-M3 |
|
Hersteller: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward impulse current: 360A
Max. load current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 30V; 20Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 30V
Load current: 20A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.38V
Kind of package: tube
Manufacturer standard package: 50pcs.
Max. forward impulse current: 360A
Max. load current: 40A
auf Bestellung 1377 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2308CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.6A
Pulsed drain current: 6A
Power dissipation: 1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 144mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI2307CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2303CDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -10A; 1.5W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2304DDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI2306BDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1503 Stücke:
Lieferzeit 14-21 Tag (e)
| SI2306BDS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.5A; Idm: 20A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 20A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 4.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI2303CDS-T1-BE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI2303CDS-T1-E3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Pulsed drain current: -10A
Power dissipation: 2.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| MAL205857472E3 |
|
Hersteller: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x30mm
Type of capacitor: electrolytic
Capacitance: 4.7mF
Height: 30mm
Operating voltage: 40V DC
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 4.7mF; 40VDC; Ø30x30mm; ±20%
Mounting: SNAP-IN
Service life: 5000h
Operating temperature: -40...105°C
Body dimensions: Ø30x30mm
Type of capacitor: electrolytic
Capacitance: 4.7mF
Height: 30mm
Operating voltage: 40V DC
Tolerance: ±20%
Diameter: 30mm
Terminal pitch: 10mm
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)
| 6N139 |
|
Hersteller: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 2000%@1.6mA
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
Collector-emitter voltage: 7V
Insulation voltage: 5.3kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 5.3kV; Uce: 7V; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
CTR@If: 2000%@1.6mA
Case: DIP8
Turn-on time: 6µs
Turn-off time: 1.5µs
Collector-emitter voltage: 7V
Insulation voltage: 5.3kV
auf Bestellung 519 Stücke:
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| MCS0402MD1691BE000 |
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
Category: SMD resistors
Description: Resistor: thin film
Type of resistor: thin film
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4946CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.1A
Power dissipation: 2.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 51.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: 25A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 6.1A; Idm: 25A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.1A
Power dissipation: 2.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 51.6mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: TrenchFET®
Pulsed drain current: 25A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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Stück im Wert von UAH
| Si4922BDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Technology: TrenchFET®
Gate charge: 62nC
On-state resistance: 24mΩ
Power dissipation: 3.1W
Drain current: 8A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Pulsed drain current: 35A
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 8A; Idm: 35A
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Case: SO8
Technology: TrenchFET®
Gate charge: 62nC
On-state resistance: 24mΩ
Power dissipation: 3.1W
Drain current: 8A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Pulsed drain current: 35A
Polarisation: unipolar
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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