| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIDR870ADP-T1-GE3 | VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIDR5102EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 126A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIDR510EP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 148A Pulsed drain current: 300A Power dissipation: 150W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIDR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 95A Pulsed drain current: 300A Power dissipation: 125W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIJH112E-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 225A Pulsed drain current: 300A Power dissipation: 333W Case: PowerPAK® 8x8L Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 160nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SIR870ADP-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 66.6W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIR870ADP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 300A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SIR512DP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80.7A Pulsed drain current: 300A Power dissipation: 96.2W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 30.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Z4KE200A-E3/54 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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P4KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE Type of diode: TVS Case: DO41 Mounting: THT Semiconductor structure: unidirectional Kind of package: 13 inch reel Leakage current: 1µA Breakdown voltage: 190V Manufacturer series: P4KE Max. forward impulse current: 1.5A Peak pulse power dissipation: 0.4kW Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 171V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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Z4KE200A-E3/73 | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.5W; 200V; DO41; single diode Type of diode: Zener Power dissipation: 1.5W Zener voltage: 200V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FEP16GT-E3/45 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Max. forward impulse current: 125A Case: TO220AB Kind of package: tube Max. forward voltage: 1.3V Max. load current: 16A Heatsink thickness: 1.14...1.39mm Reverse recovery time: 50ns |
auf Bestellung 577 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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GBU6J-E3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: tube Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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GBU6J-E3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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GBU6J-M3/51 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A Max. off-state voltage: 0.6kV Load current: 6A Features of semiconductor devices: glass passivated Max. forward impulse current: 175A Case: GBU Kind of package: in-tray Max. forward voltage: 1V Version: flat Leads: flat pin Electrical mounting: THT Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMA02040C6800FB300 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V Type of resistor: thin film Resistance: 680Ω Case - inch: 0204 Case - mm: 0510 Power: 0.25W Tolerance: ±1% Operating voltage: 200V Temperature coefficient: 50ppm/°C Body dimensions: Ø1.4x3.6mm Case: MiniMELF Conform to the norm: AEC-Q200 Quantity in set/package: 3000pcs. Diameter: 1.4mm Mounting: SMD Operating temperature: -55...155°C Length: 3.6mm |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBJ100CA-E3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3200 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBJ100CA-M3/52 | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMBJ100CA-M3/5B | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 0.1kV Breakdown voltage: 111V Max. forward impulse current: 3.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9600 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMCJ100CA-E3/57T | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
auf Bestellung 850 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SMCJ100CA-E3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 0.1kV Breakdown voltage: 111...123V Max. forward impulse current: 9.3A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMCJ Technology: TransZorb® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ZMY62-GS08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY Type of diode: Zener Power dissipation: 1W Zener voltage: 62V Mounting: SMD Tolerance: ±5% Case: DO213AB; MELF glass Semiconductor structure: single diode Manufacturer series: ZMY |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DG412LEDY-T1-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG412HSDY-E3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG412LEDQ-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 360 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DG412LEDY-GE3 | VISHAY |
Category: Analog multiplexers and switches Description: IC: analog switch Type of integrated circuit: analog switch Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SMAJ40CAHE3_A/I | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 6.2A Semiconductor structure: bidirectional Case: DO214AC; SMA Mounting: SMD Leakage current: 1µA Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape Manufacturer series: SMAJ Technology: TransZorb® Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805Y681KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805A681FXBAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805A681GXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805A681GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805A681GXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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VJ0805A681JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805 Type of capacitor: ceramic Capacitance: 0.68nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| WR404140A2202J4100 | VISHAY |
Category: THT Resistors Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs. Type of resistor: metal oxide Resistance: 22kΩ Mounting: THT Power: 2W Tolerance: ±5% Operating voltage: 500V Body dimensions: Ø3.9x10mm Temperature coefficient: 200ppm/°C Quantity in set/package: 1000pcs. Operating temperature: -55...200°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BZT52B27-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 27V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-E3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 7 inch reel Manufacturer series: BZT52B Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-G3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Kind of package: 13 inch reel Manufacturer series: BZT52B Manufacturer standard package: 10000pcs. |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-HE3_A-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BZT52B24-HE3_A-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±2% Case: SOD123 Semiconductor structure: single diode Manufacturer series: BZT52B Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WSLT2512R0150FEB | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W Type of resistor: metal strip Resistance: 15mΩ Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Power: 1W Tolerance: ±1% Operating temperature: -65...275°C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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WSL2512R0150FEA18 | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C Type of resistor: metal strip Resistance: 15mΩ Mounting: SMD Case - inch: 2512 Power: 2W Tolerance: ±1% Operating temperature: -65...170°C |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIS590DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 100V Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SQS965ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SQS940ELNW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar Drain current: 6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SQS966ENW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8 Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Case: PowerPAK® 1212-8 Mounting: SMD Polarisation: unipolar Drain current: 6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SIS9446DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 34A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 12mΩ Pulsed drain current: 60A Gate charge: 4.7nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI7232DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 25A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 24mΩ Pulsed drain current: 40A Power dissipation: 23W Gate charge: 32nC Technology: TrenchFET® Gate-source voltage: ±8V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI7223DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -40A Power dissipation: 23W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 37.2mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SIS9122DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 167mΩ Pulsed drain current: 8A Power dissipation: 11.4W Gate charge: 6nC Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SIS990DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 9.7A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.105Ω Pulsed drain current: 20A Power dissipation: 16W Gate charge: 8nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SISF04DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 86A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement Semiconductor structure: common drain On-state resistance: 6mΩ Pulsed drain current: 190A Power dissipation: 44.4W Gate charge: 60nC Technology: TrenchFET® Gate-source voltage: -12...16V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SISF00DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 7mΩ Pulsed drain current: 120A Power dissipation: 44.4W Gate charge: 53nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SISF02DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 5.6mΩ Pulsed drain current: 140A Power dissipation: 44.4W Gate charge: 56nC Technology: TrenchFET® Gate-source voltage: -12...16V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SQS944ENW-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Case: PowerPAK® 1212-8 On-state resistance: 25mΩ Mounting: SMD Pulsed drain current: 24A Power dissipation: 27.8W Gate charge: 7.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 6A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SISB46DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.3A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 15.8mΩ Pulsed drain current: 70A Power dissipation: 14.8W Gate charge: 22nC Technology: TrenchFET® Gate-source voltage: -16...20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| SI7212DN-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 2.6W Gate charge: 11nC Technology: TrenchFET® Gate-source voltage: ±12V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI7212DN-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 6.8A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 39mΩ Pulsed drain current: 20A Power dissipation: 2.6W Gate charge: 11nC Technology: TrenchFET® Gate-source voltage: ±12V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SI7922DN-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.5A Case: PowerPAK® 1212-8 Mounting: SMD Kind of channel: enhancement On-state resistance: 0.23Ω Pulsed drain current: 10A Power dissipation: 2.6W Gate charge: 8nC Technology: TrenchFET® Gate-source voltage: ±20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIDR870ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIDR5102EP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 126A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 126A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIDR510EP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 148A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 148A
Pulsed drain current: 300A
Power dissipation: 150W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIDR870ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 95A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 95A
Pulsed drain current: 300A
Power dissipation: 125W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIJH112E-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 225A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 225A
Pulsed drain current: 300A
Power dissipation: 333W
Case: PowerPAK® 8x8L
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 160nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIR870ADP-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 66.6W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIR870ADP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 300A
Power dissipation: 104W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SIR512DP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 80.7A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80.7A
Pulsed drain current: 300A
Power dissipation: 96.2W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 30.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| Z4KE200A-E3/54 |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
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| P4KE200A-E3/54 |
|
Hersteller: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 400W; 190V; 1.5A; unidirectional; DO41; TransZorb®; P4KE
Type of diode: TVS
Case: DO41
Mounting: THT
Semiconductor structure: unidirectional
Kind of package: 13 inch reel
Leakage current: 1µA
Breakdown voltage: 190V
Manufacturer series: P4KE
Max. forward impulse current: 1.5A
Peak pulse power dissipation: 0.4kW
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 171V
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| Z4KE200A-E3/73 |
|
Hersteller: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.5W; 200V; DO41; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 200V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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| FEP16GT-E3/45 |
|
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: glass passivated; ultrafast switching
Max. forward impulse current: 125A
Case: TO220AB
Kind of package: tube
Max. forward voltage: 1.3V
Max. load current: 16A
Heatsink thickness: 1.14...1.39mm
Reverse recovery time: 50ns
auf Bestellung 577 Stücke:
Lieferzeit 14-21 Tag (e)
| GBU6J-E3/45 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: tube
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6J-E3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| GBU6J-M3/51 |
|
Hersteller: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 175A
Max. off-state voltage: 0.6kV
Load current: 6A
Features of semiconductor devices: glass passivated
Max. forward impulse current: 175A
Case: GBU
Kind of package: in-tray
Max. forward voltage: 1V
Version: flat
Leads: flat pin
Electrical mounting: THT
Type of bridge rectifier: single-phase
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| MMA02040C6800FB300 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
Category: SMD resistors
Description: Resistor: thin film; 680Ω; SMD; MiniMELF; 0204; 250mW; ±1%; 200V
Type of resistor: thin film
Resistance: 680Ω
Case - inch: 0204
Case - mm: 0510
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Temperature coefficient: 50ppm/°C
Body dimensions: Ø1.4x3.6mm
Case: MiniMELF
Conform to the norm: AEC-Q200
Quantity in set/package: 3000pcs.
Diameter: 1.4mm
Mounting: SMD
Operating temperature: -55...155°C
Length: 3.6mm
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| SMBJ100CA-E3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3200 Stücke
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| SMBJ100CA-M3/52 |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| SMBJ100CA-M3/5B |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 111V; 3.7A; bidirectional; DO214AA,SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111V
Max. forward impulse current: 3.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Technology: TransZorb®
Produkt ist nicht verfügbar
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| SMCJ100CA-E3/57T |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
auf Bestellung 850 Stücke:
Lieferzeit 14-21 Tag (e)
| SMCJ100CA-E3/9AT |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.3A; bidirectional; DO214AB,SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 0.1kV
Breakdown voltage: 111...123V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMCJ
Technology: TransZorb®
Produkt ist nicht verfügbar
Mindestbestellmenge: 3500 Stücke
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| ZMY62-GS08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 62V; SMD; DO213AB,MELF glass; single diode; ZMY
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 62V
Mounting: SMD
Tolerance: ±5%
Case: DO213AB; MELF glass
Semiconductor structure: single diode
Manufacturer series: ZMY
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
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| DG412LEDY-T1-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| DG412HSDY-E3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| DG412LEDQ-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 360 Stücke
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| DG412LEDY-GE3 |
|
Hersteller: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Category: Analog multiplexers and switches
Description: IC: analog switch
Type of integrated circuit: analog switch
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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| SMAJ40CAHE3_A/I |
|
Hersteller: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 44.4÷49.1V; 6.2A; bidirectional; DO214AC,SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 6.2A
Semiconductor structure: bidirectional
Case: DO214AC; SMA
Mounting: SMD
Leakage current: 1µA
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Manufacturer series: SMAJ
Technology: TransZorb®
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| VJ0805Y681KXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| VJ0805A681FXBAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| VJ0805A681GXAAC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| VJ0805A681GXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| VJ0805A681GXBCW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 100V; C0G (NP0); ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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| VJ0805A681JXACW1BC |
|
Hersteller: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 680pF; 50V; C0G (NP0); ±5%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 0.68nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| WR404140A2202J4100 |
|
Hersteller: VISHAY
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Operating temperature: -55...200°C
Category: THT Resistors
Description: Resistor: metal oxide; 22kΩ; THT; 2W; ±5%; 500V; Ø3.9x10mm; 1000pcs.
Type of resistor: metal oxide
Resistance: 22kΩ
Mounting: THT
Power: 2W
Tolerance: ±5%
Operating voltage: 500V
Body dimensions: Ø3.9x10mm
Temperature coefficient: 200ppm/°C
Quantity in set/package: 1000pcs.
Operating temperature: -55...200°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| BZT52B27-HE3_A-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 27V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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| BZT52B24-E3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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| BZT52B24-E3-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
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| BZT52B24-G3-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 7 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 7 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
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| BZT52B24-G3-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; 13 inch reel
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Kind of package: 13 inch reel
Manufacturer series: BZT52B
Manufacturer standard package: 10000pcs.
Produkt ist nicht verfügbar
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| BZT52B24-HE3_A-08 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Produkt ist nicht verfügbar
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| BZT52B24-HE3_A-18 |
|
Hersteller: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123; single diode; BZT52B
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±2%
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: BZT52B
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| WSLT2512R0150FEB |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; current shunt,sensing; SMD; 2512; 1W
Type of resistor: metal strip
Resistance: 15mΩ
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Power: 1W
Tolerance: ±1%
Operating temperature: -65...275°C
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| WSL2512R0150FEA18 |
|
Hersteller: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; 15mΩ; SMD; 2512; 2W; ±1%; -65÷170°C
Type of resistor: metal strip
Resistance: 15mΩ
Mounting: SMD
Case - inch: 2512
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
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| SIS590DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 100V; PowerPAK® 1212-8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: reel; tape
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| SQS965ELNW-T1_GE3 |
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Produkt ist nicht verfügbar
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| SQS940ELNW-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Produkt ist nicht verfügbar
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| SQS966ENW-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 6A; PowerPAK® 1212-8
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET x2
Case: PowerPAK® 1212-8
Mounting: SMD
Polarisation: unipolar
Drain current: 6A
Produkt ist nicht verfügbar
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| SIS9446DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 12mΩ
Pulsed drain current: 60A
Gate charge: 4.7nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 34A; Idm: 60A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 34A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 12mΩ
Pulsed drain current: 60A
Gate charge: 4.7nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SI7232DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 24mΩ
Pulsed drain current: 40A
Power dissipation: 23W
Gate charge: 32nC
Technology: TrenchFET®
Gate-source voltage: ±8V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 25A; Idm: 40A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 25A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 24mΩ
Pulsed drain current: 40A
Power dissipation: 23W
Gate charge: 32nC
Technology: TrenchFET®
Gate-source voltage: ±8V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI7223DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 37.2mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6A; Idm: -40A
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -40A
Power dissipation: 23W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 37.2mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| SIS9122DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 167mΩ
Pulsed drain current: 8A
Power dissipation: 11.4W
Gate charge: 6nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 5.7A; Idm: 8A; 11.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 167mΩ
Pulsed drain current: 8A
Power dissipation: 11.4W
Gate charge: 6nC
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| SIS990DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Pulsed drain current: 20A
Power dissipation: 16W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.7A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.105Ω
Pulsed drain current: 20A
Power dissipation: 16W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| SISF04DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
On-state resistance: 6mΩ
Pulsed drain current: 190A
Power dissipation: 44.4W
Gate charge: 60nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 86A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
Semiconductor structure: common drain
On-state resistance: 6mΩ
Pulsed drain current: 190A
Power dissipation: 44.4W
Gate charge: 60nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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| SISF00DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7mΩ
Pulsed drain current: 120A
Power dissipation: 44.4W
Gate charge: 53nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 7mΩ
Pulsed drain current: 120A
Power dissipation: 44.4W
Gate charge: 53nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SISF02DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.6mΩ
Pulsed drain current: 140A
Power dissipation: 44.4W
Gate charge: 56nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 60A; Idm: 140A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 5.6mΩ
Pulsed drain current: 140A
Power dissipation: 44.4W
Gate charge: 56nC
Technology: TrenchFET®
Gate-source voltage: -12...16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SQS944ENW-T1_GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 25mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 27.8W
Gate charge: 7.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 24A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Case: PowerPAK® 1212-8
On-state resistance: 25mΩ
Mounting: SMD
Pulsed drain current: 24A
Power dissipation: 27.8W
Gate charge: 7.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 6A
Produkt ist nicht verfügbar
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| SISB46DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 15.8mΩ
Pulsed drain current: 70A
Power dissipation: 14.8W
Gate charge: 22nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 15.8mΩ
Pulsed drain current: 70A
Power dissipation: 14.8W
Gate charge: 22nC
Technology: TrenchFET®
Gate-source voltage: -16...20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SI7212DN-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI7212DN-T1-GE3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6.8A; Idm: 20A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 6.8A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 39mΩ
Pulsed drain current: 20A
Power dissipation: 2.6W
Gate charge: 11nC
Technology: TrenchFET®
Gate-source voltage: ±12V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| SI7922DN-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.5A
Case: PowerPAK® 1212-8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 0.23Ω
Pulsed drain current: 10A
Power dissipation: 2.6W
Gate charge: 8nC
Technology: TrenchFET®
Gate-source voltage: ±20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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