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STT800N16P55XPSA1 INFINEON TECHNOLOGIES STT800N16P55.pdf Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Produkt ist nicht verfügbar
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IRFR540ZTRPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.65 EUR
Mindestbestellmenge: 2000
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Produkt ist nicht verfügbar
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IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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AUIR3240STR AUIR3240STR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
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AUIR3242SXUMA1 AUIR3242SXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66KFE6327 INFINEON TECHNOLOGIES BCW66K.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
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BCW66KGE6327HTSA1 INFINEON TECHNOLOGIES bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07 Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.061 EUR
Mindestbestellmenge: 3000
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IPP60R080P7 IPP60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R080P7 IPW60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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IPB60R080P7ATMA1 IPB60R080P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896813BD02BADB3D6&compId=IPB60R080P7.pdf?ci_sign=3c01e4952f1c32a10c73fab21d64a62f3b2e1442 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
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IPZA60R080P7XKSA1 IPZA60R080P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFED125C01BD3D1&compId=IPZA60R080P7.pdf?ci_sign=ef9be7ac0a8c54c0b647b1e2231a33a29b63d583 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
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IPP60R125P6XKSA1 IPP60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A1D5CDA931BF&compId=IPP60R125P6-DTE.pdf?ci_sign=efad1efd398c54219921fe1d04530a5ad86ec065 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.52 EUR
13+5.78 EUR
14+5.46 EUR
Mindestbestellmenge: 10
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IPL60R125P7AUMA1 IPL60R125P7AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681931E647433D6&compId=IPL60R125P7.pdf?ci_sign=e88d00a5cf9726cc0ab8f3c774f6e3a1ab8eb8bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
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IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B41E3C77CFC469&compId=BSS192PH6327FTSA1.pdf?ci_sign=11076b1b245a34fddb3d33c4ae9cc3628d261909 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY9BF324MPMC-G-MNE2 INFINEON TECHNOLOGIES Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
119+8.34 EUR
Mindestbestellmenge: 119
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CY62187EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IGCM06F60GAXKMA1 IGCM06F60GAXKMA1 INFINEON TECHNOLOGIES IGCM06F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 INFINEON TECHNOLOGIES IPD65R1K4CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 INFINEON TECHNOLOGIES IPD65R225C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES IPD65R250C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES IPD65R250E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES IPD65R600C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1 INFINEON TECHNOLOGIES Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
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16+4.48 EUR
28+2.56 EUR
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IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.21 EUR
10+7.32 EUR
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI60R125CPXKSA1 IPI60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942DFCD9EE71BF&compId=IPI60R125CP-DTE.pdf?ci_sign=a6ea8e60abe31ce0efe03800b0779adda6010d85 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES IPI032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP772T BSP772T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1675 Stücke:
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16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Output current: 2.17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223-3
auf Bestellung 3070 Stücke:
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23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.1 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
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IRFU13N20DPBF IRFU13N20DPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
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228+0.31 EUR
363+0.2 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.069 EUR
1097+0.065 EUR
1500+0.064 EUR
Mindestbestellmenge: 228
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BSS670S2LH6433XTMA1 INFINEON TECHNOLOGIES BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.06 EUR
Mindestbestellmenge: 10000
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
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22+3.25 EUR
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
143+0.5 EUR
168+0.43 EUR
196+0.37 EUR
207+0.35 EUR
Mindestbestellmenge: 105
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PVT322ASPBF INFINEON TECHNOLOGIES IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
50+14.11 EUR
Mindestbestellmenge: 50
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PVT322S-TPBF INFINEON TECHNOLOGIES pvt322.pdf?fileId=5546d462533600a40153568427eb2965 INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
750+11.28 EUR
Mindestbestellmenge: 750
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R125C7XKSA1 IPA65R125C7XKSA1 INFINEON TECHNOLOGIES IPA65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB94A02B2C431BF&compId=IPP65R125C7-DTE.pdf?ci_sign=00d72aa2fd9ce7f2bfa841eaad24f8aa97706fda Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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STT800N16P55XPSA1 STT800N16P55.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Produkt ist nicht verfügbar
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IRFR540ZTRPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.65 EUR
Mindestbestellmenge: 2000
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DD340N20SHPSA1 DD340N20S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Produkt ist nicht verfügbar
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IPW60R070CFD7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA7F2EE2B5874A&compId=IPW60R070CFD7.pdf?ci_sign=68bde6167c82ae31c9a715e7932f17ad13c37a54
IPW60R070CFD7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R070P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59546FC0F7031BF&compId=IPW60R070P6-DTE.pdf?ci_sign=51b5ba3d1091fd0d4ee959109032092458bb384e
IPW60R070P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIR3240STR pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3AAF61BAF8BF&compId=AUIR3240S.pdf?ci_sign=7576fdee7207b3be02f35991f19453ba01efc0d4
AUIR3240STR
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
Produkt ist nicht verfügbar
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AUIR3242SXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBF3D7C4CCD58BF&compId=AUIR3242S.pdf?ci_sign=d75be44e9e78f376970f436c3ecddc58d6354d5a
AUIR3242SXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Produkt ist nicht verfügbar
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BCW66KFE6327 BCW66K.pdf
BCW66KFE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
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BCW66KGE6327HTSA1 bcw66.pdf?folderId=db3a304314dca389011545f4eb561884&fileId=db3a304314dca389011547504ebe1a07
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.061 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef
IPP60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1FE04C8F66749&compId=IPW60R080P7.pdf?ci_sign=195cee5d2680397630540f16ad4b24f277950462
IPW60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R080P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896813BD02BADB3D6&compId=IPB60R080P7.pdf?ci_sign=3c01e4952f1c32a10c73fab21d64a62f3b2e1442
IPB60R080P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZA60R080P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFED125C01BD3D1&compId=IPZA60R080P7.pdf?ci_sign=ef9be7ac0a8c54c0b647b1e2231a33a29b63d583
IPZA60R080P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R120P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1752E50D38749&compId=IPP60R120P7.pdf?ci_sign=db5d6da5af7792cb5fe3e97f682fefdab165ae7b
IPP60R120P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R120P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594A1D5CDA931BF&compId=IPP60R125P6-DTE.pdf?ci_sign=efad1efd398c54219921fe1d04530a5ad86ec065
IPP60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59543CDD019D1BF&compId=IPW60R125P6-DTE.pdf?ci_sign=088cedc48e6352559a5ff6e64b1bf0a9857977f4
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.52 EUR
13+5.78 EUR
14+5.46 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPL60R125P7AUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89681931E647433D6&compId=IPL60R125P7.pdf?ci_sign=e88d00a5cf9726cc0ab8f3c774f6e3a1ab8eb8bc
IPL60R125P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Produkt ist nicht verfügbar
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IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS192PH6327FTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B41E3C77CFC469&compId=BSS192PH6327FTSA1.pdf?ci_sign=11076b1b245a34fddb3d33c4ae9cc3628d261909
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY9BF324MPMC-G-MNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+8.34 EUR
Mindestbestellmenge: 119
Im Einkaufswagen  Stück im Wert von  UAH
CY62187EV30LL-55BAXIT Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IGCM06F60GAXKMA1 IGCM06F60GA.pdf
IGCM06F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFD-DTE.pdf
IPD65R1K4CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7-DTE.pdf
IPD65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6-DTE.pdf
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6-DTE.pdf
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 IPD65R600C6-DTE.pdf
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
28+2.56 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a
IPP60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.21 EUR
10+7.32 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R125C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8
IPP60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5942DFCD9EE71BF&compId=IPI60R125CP-DTE.pdf?ci_sign=a6ea8e60abe31ce0efe03800b0779adda6010d85
IPI60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI032N06N3GAKSA1 IPI032N06N3G-DTE.pdf
IPI032N06N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP772T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 1675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
BSP77E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
On-state resistance: 70mΩ
Output voltage: 42V
Output current: 2.17A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: HITFET®
Kind of integrated circuit: low-side
Mounting: SMD
Case: SOT223-3
auf Bestellung 3070 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.1 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IRFU13N20DPBF irfr13n20dpbf.pdf
IRFU13N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
363+0.2 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.069 EUR
1097+0.065 EUR
1500+0.064 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
BSS670S2LH6433XTMA1 BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.06 EUR
Mindestbestellmenge: 10000
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1EDC10I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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BSP89H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 0.35A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.5 EUR
168+0.43 EUR
196+0.37 EUR
207+0.35 EUR
Mindestbestellmenge: 105
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PVT322ASPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1850 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+14.11 EUR
Mindestbestellmenge: 50
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PVT322S-TPBF pvt322.pdf?fileId=5546d462533600a40153568427eb2965 INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+11.28 EUR
Mindestbestellmenge: 750
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IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R125C7XKSA1 IPA65R125C7-DTE.pdf
IPA65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R125C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB94A02B2C431BF&compId=IPP65R125C7-DTE.pdf?ci_sign=00d72aa2fd9ce7f2bfa841eaad24f8aa97706fda
IPP65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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