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2ED21094S06JXUMA1 INFINEON TECHNOLOGIES Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1916 Stücke:
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334+0.21 EUR
435+0.16 EUR
544+0.13 EUR
610+0.12 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.083 EUR
Mindestbestellmenge: 334
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ITS428L2ATMA1 ITS428L2ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
auf Bestellung 2343 Stücke:
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28+2.6 EUR
37+1.94 EUR
41+1.76 EUR
100+1.64 EUR
Mindestbestellmenge: 28
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IRFB7540PBF IRFB7540PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAF57F0C315EA&compId=IRFB7540PBF.pdf?ci_sign=3d11ad0f52ae3cf89f9ccc7efd218a58eb0629b9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 160 Stücke:
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35+2.07 EUR
70+1.03 EUR
84+0.85 EUR
98+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 35
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IRS2011STRPBF INFINEON TECHNOLOGIES INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.74 EUR
Mindestbestellmenge: 2500
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CY7C1071DV33-12BAXI INFINEON TECHNOLOGIES Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1079DV33-12BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 4Mx8bit; 12ns; FBGA48; parallel; in-tray
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 4Mx8bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1071DV33-12BAXIT INFINEON TECHNOLOGIES ?docID=31919 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IRFR4510TRPBF INFINEON TECHNOLOGIES irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 143W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFSL4510PBF IRFSL4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
auf Bestellung 1 Stücke:
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1+230.59 EUR
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1ED44175N01BXTSA1 1ED44175N01BXTSA1 INFINEON TECHNOLOGIES Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: IGBT gate driver; low-side
Technology: EiceDRIVER™
Case: SOT23-6
Output current: -2.6...2.6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 12.7...20V
Voltage class: 25V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
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TLF80511TFV50ATMA2 INFINEON TECHNOLOGIES Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.02 EUR
Mindestbestellmenge: 2500
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DEMO SENSE2GOL INFINEON TECHNOLOGIES Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
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BTS50080-1TMA BTS50080-1TMA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-4
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
auf Bestellung 990 Stücke:
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12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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CY7C1472V33-200AXC INFINEON TECHNOLOGIES Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Frequency: 200MHz
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory organisation: 4Mx18bit
Memory: 72Mb SRAM
Produkt ist nicht verfügbar
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BCR505E6327 BCR505E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3441 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
562+0.13 EUR
863+0.083 EUR
1085+0.066 EUR
1208+0.059 EUR
1270+0.056 EUR
Mindestbestellmenge: 417
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BCR503E6327HTSA1 BCR503E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 6580 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
275+0.26 EUR
317+0.23 EUR
466+0.15 EUR
557+0.13 EUR
685+0.1 EUR
800+0.089 EUR
1000+0.079 EUR
1300+0.076 EUR
Mindestbestellmenge: 228
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6185 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCR562E6327 BCR562E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.19 EUR
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BCX70KE6327 BCX70KE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
521+0.14 EUR
819+0.087 EUR
1127+0.063 EUR
1286+0.056 EUR
Mindestbestellmenge: 358
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IRF7815TRPBF IRF7815TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 5.1A
Drain-source voltage: 150V
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL064P0XMFA003 INFINEON TECHNOLOGIES Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 104MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 104MHz
Produkt ist nicht verfügbar
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S29JL064J55TFA003 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29JL064J60TFA003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7 Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29JL064J70TFA003 INFINEON TECHNOLOGIES Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BTF3125EJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF777B19CA520C4&compId=BTF3125EJ.pdf?ci_sign=84e2b0a9f569158632b0e1e5fd024470012e7163 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 0.11Ω
Power dissipation: 1W
Number of channels: 1
Output current: 2A
Supply voltage: 3...5.5V DC
Output voltage: 40V
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 INFINEON TECHNOLOGIES Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 72W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.69 EUR
Mindestbestellmenge: 2500
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SAK-TC1797-384F150E INFINEON TECHNOLOGIES SAK-TC1797-384F150E.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC; Core: 32-bit
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IPT015N10NF2SATMA1 INFINEON TECHNOLOGIES infineon-ipt015n10nf2s-datasheet-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4570 Stücke:
Lieferzeit 14-21 Tag (e)
1800+2.42 EUR
Mindestbestellmenge: 1800
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FZ400R17KE4HOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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S25FL512SAGMFMG10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SAGMFMR10 INFINEON TECHNOLOGIES 001-98284%20Rev%20U.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SAGMFMR13 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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IPP037N08N3GXKSA1 IPP037N08N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB146D4A8B411C&compId=IPP037N08N3G-DTE.pdf?ci_sign=64c6c32f058f82ac6d07d999c4f316e79c242e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
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25+2.95 EUR
28+2.56 EUR
33+2.23 EUR
50+1.97 EUR
100+1.76 EUR
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BSC037N08NS5ATMA1 BSC037N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
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BGSA11GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed Category: Analog multiplexers and switches
Description: IC: RF switch; SPST; CMOS; TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Case: TSNP10
Operating temperature: -40...85°C
Output configuration: SPST
Interface: CMOS
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IPG20N04S409ATMA1 IPG20N04S409ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPG20N04S4L11ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IPP120N04S302AKSA1 IPP120N04S302AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ T
Produkt ist nicht verfügbar
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IPI120N04S402AKSA1 IPI120N04S402AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA595BDCC7A6143&compId=IPI120N04S402.pdf?ci_sign=775495591aaddac68fbafdad717a249f72a379b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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IAUC120N04S6L005ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L008ATMA1 IAUC120N04S6L008ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDA13A543838BF&compId=IAUC120N04S6L008.pdf?ci_sign=bdab0025d6d4f979e10d9a77ea4ed33ea87d6919 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IAUC120N04S6L009ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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IAUC120N04S6N009ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD9EC30B7078BF&compId=IAUC120N04S6N009.pdf?ci_sign=a6dd2747ae99ac90ee67d33d57d4be89710a86dc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPG20N04S4L08ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
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IPB120N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 120A; 158W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
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BSZ040N04LSGATMA1 BSZ040N04LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E052B42C0811C&compId=BSZ040N04LSG-DTE.pdf?ci_sign=086584638ccfdd5ed44256d041035edc91b171d2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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96+0.75 EUR
101+0.71 EUR
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IPZ40N04S53R1ATMA1 IPZ40N04S53R1ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5DEF7DBF97E28&compId=IPZ40N04S53R1.pdf?ci_sign=0ae6e10a5f9e2726964daefd2523a88b8caa579c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.1mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 71W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5-5R4 IPZ40N04S5-5R4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA847358E2A74A&compId=IPZ40N04S5-5R4.pdf?ci_sign=d87690e2b52440f710216f339021a29a7c9476cb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 6.3mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5-8R4 IPZ40N04S5-8R4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8787BDAF274A&compId=IPZ40N04S5-8R4.pdf?ci_sign=5350b58bf3f81c9b318e130a2519f3d855f10390 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 13.7nC
On-state resistance: 9.9mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5L-2R8 IPZ40N04S5L-2R8 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA89F61D20874A&compId=IPZ40N04S5L-2R8.pdf?ci_sign=ee02b7778856d447f739e700de60e47ffaae1978 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 3.8mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 71W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5L-4R8 IPZ40N04S5L-4R8 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8C03AFC8874A&compId=IPZ40N04S5L-4R8.pdf?ci_sign=e072796b1966f97ce0e1301759d47316f5d24d7e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 6.7mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 48W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5L-7R4 IPZ40N04S5L-7R4 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8F50F7EDE74A&compId=IPZ40N04S5L-7R4.pdf?ci_sign=38c31f7871204bf2af0450c5372a4ea55b9e53b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 10.7mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 34W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE493DW2B6A0HTSA1 INFINEON TECHNOLOGIES TLE493D-W2B6_v1.2_4-9-19.pdf Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
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3000+1.4 EUR
Mindestbestellmenge: 3000
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BSC0702LSATMA1 INFINEON TECHNOLOGIES Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRFH6200TRPBF IRFH6200TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS4620TRLPBF INFINEON TECHNOLOGIES irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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2ED21094S06JXUMA1 Infineon-2ED2109-4-S06F-J-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb8d7493e29eb
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Mounting: SMD
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Protection: undervoltage UVP
Output current: -0.7...0.29A
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 650V
Case: PG-DSO-14
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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BAS7002VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1916 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
435+0.16 EUR
544+0.13 EUR
610+0.12 EUR
705+0.1 EUR
807+0.089 EUR
1000+0.083 EUR
Mindestbestellmenge: 334
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ITS428L2ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698AB8FC71B6469&compId=ITS428L2.pdf?ci_sign=78000ac0f0843a05110a1e62c49cd89d125daedb
ITS428L2ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.8A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
On-state resistance: 50mΩ
Supply voltage: 4.75...43V DC
Technology: Industrial PROFET
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.6 EUR
37+1.94 EUR
41+1.76 EUR
100+1.64 EUR
Mindestbestellmenge: 28
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IRFB7540PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCAF57F0C315EA&compId=IRFB7540PBF.pdf?ci_sign=3d11ad0f52ae3cf89f9ccc7efd218a58eb0629b9
IRFB7540PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 160W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 88nC
Kind of channel: enhancement
Kind of package: tube
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
70+1.03 EUR
84+0.85 EUR
98+0.73 EUR
105+0.69 EUR
Mindestbestellmenge: 35
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IRS2011STRPBF INFN-S-A0001467921-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1A; Ch: 2; Uin: 10÷20V
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V
Number of channels: 2
Case: SOIC8
Input voltage: 10...20V
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
Output current: 1A
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.74 EUR
Mindestbestellmenge: 2500
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CY7C1071DV33-12BAXI Infineon-CY7C1071DV33_32-Mbit_(2_M_16)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec32a933817&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1079DV33-12BAXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 4Mx8bit; 12ns; FBGA48; parallel; in-tray
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 4Mx8bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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CY7C1071DV33-12BAXIT ?docID=31919
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 12ns; FBGA48; parallel
Mounting: SMD
Operating temperature: -40...85°C
Case: FBGA48
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Access time: 12ns
Supply voltage: 3...3.6V DC
Memory organisation: 2Mx16bit
Memory: 32Mb SRAM
Type of integrated circuit: SRAM memory
Produkt ist nicht verfügbar
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IRFR4510TRPBF irfr4510pbf.pdf?fileId=5546d462533600a40153563228bc20f1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 100V
Pulsed drain current: 252A
Drain current: 45A
On-state resistance: 13.9mΩ
Gate-source voltage: ±20V
Power dissipation: 143W
Case: DPAK
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IRFSL4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8C9AD0E015EA&compId=IRFSL4510PBF.pdf?ci_sign=b37f1d0d62505b5298aa4ab906aa8bf121bff388
IRFSL4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 140W; TO262
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 140W
Case: TO262
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Produkt ist nicht verfügbar
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FF200R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A60961A4E73D7&compId=FF200R17KE4.pdf?ci_sign=57d7f67c089c0a8f2ad55fa545e7f1876fe92b70
FF200R17KE4HOSA1
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+230.59 EUR
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1ED44175N01BXTSA1 Infineon-1ED44175N01B-DataSheet-v01_00-EN.pdf?fileId=5546d4626df6ee62016e3bf0b3230f35
1ED44175N01BXTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; low-side,IGBT gate driver; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: IGBT gate driver; low-side
Technology: EiceDRIVER™
Case: SOT23-6
Output current: -2.6...2.6A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 12.7...20V
Voltage class: 25V
Protection: anti-overload OPP; undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLF80511TFV50ATMA2 Infineon-TLF80511TF-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159fa3199ac3f4b
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator
Type of integrated circuit: voltage regulator
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.02 EUR
Mindestbestellmenge: 2500
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DEMO SENSE2GOL
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
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BTS50080-1TMA pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869886717E39A469&compId=BTS50080-1TMA.pdf?ci_sign=8cbe647494b17e75a46beef59340490bf8400257
BTS50080-1TMA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; SMD
Technology: High Current PROFET
Kind of integrated circuit: high-side
Case: PG-TO220-7-4
Kind of output: N-Channel
Type of integrated circuit: power switch
Mounting: SMD
On-state resistance: 7mΩ
Output current: 9.5A
Number of channels: 1
Supply voltage: 5.5...38V DC
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
14+5.42 EUR
25+4.88 EUR
100+4.52 EUR
250+4.3 EUR
500+3.88 EUR
Mindestbestellmenge: 12
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CY7C1472V33-200AXC Infineon-CY7C1470V33_CY7C1472V33_CY7C1474V33_72-Mbit_(2_M_36_4_M_18_1_M_72)_Pipelined_SRAM_with_NoBL_Architecture-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec0dd343585&utm_source=cypress&utm_medium=referral&utm_camp
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 4Mx18bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Case: TQFP100
Mounting: SMD
Frequency: 200MHz
Operating temperature: 0...70°C
Kind of package: in-tray
Kind of interface: parallel
Kind of memory: SRAM
Supply voltage: 3.135...3.6V DC
Memory organisation: 4Mx18bit
Memory: 72Mb SRAM
Produkt ist nicht verfügbar
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BCR505E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56A5B28972469&compId=BCR505.pdf?ci_sign=5e69ad6db06b9b14afe597363046ce48384c5007
BCR505E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 3441 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
562+0.13 EUR
863+0.083 EUR
1085+0.066 EUR
1208+0.059 EUR
1270+0.056 EUR
Mindestbestellmenge: 417
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BCR503E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C56C2C8D2EC469&compId=BCR503.pdf?ci_sign=9fd95cda543b3b14d33c4843aec4d29fbb1d0b45
BCR503E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 6580 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
275+0.26 EUR
317+0.23 EUR
466+0.15 EUR
557+0.13 EUR
685+0.1 EUR
800+0.089 EUR
1000+0.079 EUR
1300+0.076 EUR
Mindestbestellmenge: 228
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BCX71HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
3000+0.032 EUR
Mindestbestellmenge: 600
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BCR562E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C54947CF9D8469&compId=BCR562.pdf?ci_sign=176f9a32ccc0b392519c73836ded721c287ee03c
BCR562E6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 4.7kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.19 EUR
Mindestbestellmenge: 60
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BCX70KE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C51B66DDC20469&compId=BCX70.pdf?ci_sign=da2571f5ae52c3566a8c40c8667b91e53fbb8af0
BCX70KE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
521+0.14 EUR
819+0.087 EUR
1127+0.063 EUR
1286+0.056 EUR
Mindestbestellmenge: 358
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IRF7815TRPBF pVersion=0046&contRep=ZT&docId=E221ABCB43F139F1A303005056AB0C4F&compId=irf7815pbf.pdf?ci_sign=38f5aecb8cc9f50903c245ba07a8c38492c46f1b
IRF7815TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Polarisation: unipolar
Power dissipation: 2.5W
Drain current: 5.1A
Drain-source voltage: 150V
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S25FL064P0XMFA003 Infineon-S25FL064P_64-Mbit_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed4dcb1535c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 104MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Operating frequency: 104MHz
Produkt ist nicht verfügbar
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S29JL064J55TFA003
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29JL064J60TFA003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 60ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 60ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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S29JL064J70TFA003
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 70ns; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 70ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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BTF3125EJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEF777B19CA520C4&compId=BTF3125EJ.pdf?ci_sign=84e2b0a9f569158632b0e1e5fd024470012e7163
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2A; Ch: 1; N-Channel; SMD; PG-TDSO-8-31
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-TDSO-8-31
Type of integrated circuit: power switch
Kind of package: reel; tape
Operating temperature: -40...150°C
Turn-on time: 1.35µs
Turn-off time: 2µs
On-state resistance: 0.11Ω
Power dissipation: 1W
Number of channels: 1
Output current: 2A
Supply voltage: 3...5.5V DC
Output voltage: 40V
Produkt ist nicht verfügbar
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IPD60R180P7SAUMA1 Infineon-IPD60R180P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d55249fca0f9c
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 72W; DPAK; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.69 EUR
Mindestbestellmenge: 2500
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SAK-TC1797-384F150E SAK-TC1797-384F150E.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller; BGA416; 3MBFLASH; 3.5÷5VDC; Core: 32-bit
Type of integrated circuit: microcontroller
Case: BGA416
Memory: 3MB FLASH
Mounting: SMD
Supply voltage: 3.5...5V DC
Interface: I2C; SPI; UART
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IPT015N10NF2SATMA1 infineon-ipt015n10nf2s-datasheet-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4570 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1800+2.42 EUR
Mindestbestellmenge: 1800
Im Einkaufswagen  Stück im Wert von  UAH
FZ400R17KE4HOSA1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B88F4F7E06AE0D5&compId=FZ400R17KE4.pdf?ci_sign=3f57764cc2e603070a38fc08322d912fd1ad5e8f
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 400A; AG-62MMES
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Case: AG-62MMES
Electrical mounting: screw
Power dissipation: 2.5kW
Technology: TRENCHSTOP™
Mechanical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 400A
Pulsed collector current: 800A
Max. off-state voltage: 1.7kV
Produkt ist nicht verfügbar
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S25FL512SAGMFMG10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SAGMFMR10 001-98284%20Rev%20U.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: in-tray
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
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S25FL512SAGMFMR13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Interface: QUAD SPI
Mounting: SMD
Kind of package: reel; tape
Kind of interface: serial
Operating temperature: -40...125°C
Operating voltage: 2.7...3.6V
Memory: 512Mb FLASH
Operating frequency: 133MHz
Type of integrated circuit: FLASH memory
Application: automotive
Case: SOIC16
Kind of memory: NOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP037N08N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB146D4A8B411C&compId=IPP037N08N3G-DTE.pdf?ci_sign=64c6c32f058f82ac6d07d999c4f316e79c242e05
IPP037N08N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 214W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
28+2.56 EUR
33+2.23 EUR
50+1.97 EUR
100+1.76 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BSC037N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2E0B3F440811C&compId=BSC037N08NS5-DTE.pdf?ci_sign=068004eaadd07b73cbe8cb48d01465db41fd351d
BSC037N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 114W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 114W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 40A; 46W; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 40A
Gate-source voltage: 20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Electrical mounting: SMT
Power dissipation: 46W
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BGSA11GN10E6327XTSA1 Infineon-BGSA11GN10-DataSheet-v03_02-EN.pdf?fileId=5546d46255dd933d0155e9dac4e809ed
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SPST; CMOS; TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Case: TSNP10
Operating temperature: -40...85°C
Output configuration: SPST
Interface: CMOS
auf Bestellung 37500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7500+0.12 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S409ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA57E4A02E10143&compId=IPG20N04S409.pdf?ci_sign=c4432906d78c25f5effc1e82352607614ab5fbf0
IPG20N04S409ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 54W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 54W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPG20N04S4L11ATMA1 Infineon-IPG20N04S4L_11-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf644b016c14
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; Idm: 80A
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 41W
Case: PG-TDSON-8-4
Gate-source voltage: ±16V
On-state resistance: 11.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP120N04S302AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA888DB63FA143&compId=IPP120N04S302.pdf?ci_sign=121255400b0b3da3e0c94e4be5980b7bba7b7b21
IPP120N04S302AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 120A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ T
Produkt ist nicht verfügbar
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IPI120N04S402AKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA595BDCC7A6143&compId=IPI120N04S402.pdf?ci_sign=775495591aaddac68fbafdad717a249f72a379b2
IPI120N04S402AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 120A; 158W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L005ATMA1 Infineon-IAUC120N04S6L005-DataSheet-v01_00-EN.pdf?fileId=5546d46275b79adb0175e129ada610b6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 60A; Idm: 1550A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 1550A
Power dissipation: 187W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L008ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBDA13A543838BF&compId=IAUC120N04S6L008.pdf?ci_sign=bdab0025d6d4f979e10d9a77ea4ed33ea87d6919
IAUC120N04S6L008ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IAUC120N04S6L009ATMA1 Infineon-IAUC120N04S6L009-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c4c4d087c177b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC120N04S6N009ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBD9EC30B7078BF&compId=IAUC120N04S6N009.pdf?ci_sign=a6dd2747ae99ac90ee67d33d57d4be89710a86dc
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 150W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IPG20N04S4L08ATMA1 Infineon-IPG20N04S4L_08-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf634e6f6c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPG20N04S4L08ATMA1
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.82 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPB120N04S402ATMA1 Infineon-IPP_B_I120N04S4_02-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c33093d5d37&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 120A; 158W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 158W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 1.58mΩ
Mounting: SMD
Gate charge: 134nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.54 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BSZ040N04LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E052B42C0811C&compId=BSZ040N04LSG-DTE.pdf?ci_sign=086584638ccfdd5ed44256d041035edc91b171d2
BSZ040N04LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 69W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 69W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 1938 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
58+1.24 EUR
76+0.95 EUR
96+0.75 EUR
101+0.71 EUR
Mindestbestellmenge: 58
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S53R1ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BCD5DEF7DBF97E28&compId=IPZ40N04S53R1.pdf?ci_sign=0ae6e10a5f9e2726964daefd2523a88b8caa579c
IPZ40N04S53R1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.1mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 71W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5-5R4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA847358E2A74A&compId=IPZ40N04S5-5R4.pdf?ci_sign=d87690e2b52440f710216f339021a29a7c9476cb
IPZ40N04S5-5R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 6.3mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 48W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5-8R4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8787BDAF274A&compId=IPZ40N04S5-8R4.pdf?ci_sign=5350b58bf3f81c9b318e130a2519f3d855f10390
IPZ40N04S5-8R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 13.7nC
On-state resistance: 9.9mΩ
Drain current: 40A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5L-2R8 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA89F61D20874A&compId=IPZ40N04S5L-2R8.pdf?ci_sign=ee02b7778856d447f739e700de60e47ffaae1978
IPZ40N04S5L-2R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 52nC
On-state resistance: 3.8mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 71W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ40N04S5L-4R8 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8C03AFC8874A&compId=IPZ40N04S5L-4R8.pdf?ci_sign=e072796b1966f97ce0e1301759d47316f5d24d7e
IPZ40N04S5L-4R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 29nC
On-state resistance: 6.7mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 48W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPZ40N04S5L-7R4 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA8F50F7EDE74A&compId=IPZ40N04S5L-7R4.pdf?ci_sign=38c31f7871204bf2af0450c5372a4ea55b9e53b1
IPZ40N04S5L-7R4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Case: PG-TSDSON-8
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 10.7mΩ
Drain current: 40A
Gate-source voltage: ±16V
Power dissipation: 34W
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE493DW2B6A0HTSA1 TLE493D-W2B6_v1.2_4-9-19.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+1.4 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
BSC0702LSATMA1 Infineon-BSC0702LS-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff0909c6f4eda
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.72 EUR
Mindestbestellmenge: 5000
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IRFH6200TRPBF pVersion=0046&contRep=ZT&docId=E221B9747C2264F1A303005056AB0C4F&compId=irfh6200pbf.pdf?ci_sign=62fd898ae5f059ad6aae7ce81c47a4d0a9e78a88
IRFH6200TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 17A
Pulsed drain current: 100A
Power dissipation: 144W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 77.5mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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