Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151653) > Seite 2495 nach 2528
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IPD031N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 79A Power dissipation: 94W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 167W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 888 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD075N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 35A Power dissipation: 47W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 2455 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD135N03LGATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 31W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
auf Bestellung 814 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF8736TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 18A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: resonant mode controller Frequency: 30kHz...1MHz Case: PG-DSO-20 Mounting: SMD Operating temperature: -25...125°C Topology: push-pull Application: SMPS Operating voltage: 11...18V DC |
Produkt ist nicht verfügbar |
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IR2112PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Mounting: THT Case: DIP14 Supply voltage: 10...20V DC Number of channels: 2 Turn-on time: 205ns Turn-off time: 145ns Output current: -420...200mA Kind of package: tube Topology: MOSFET half-bridge Voltage class: 600V Operating temperature: -40...125°C Power: 1.6W |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112SPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 205ns Turn-off time: 145ns |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2112STRPBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16-W Output current: -420...200mA Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 205ns Turn-off time: 145ns |
auf Bestellung 906 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR4105TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 25A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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AUIRFR4105ZTRL | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 30A Power dissipation: 48W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IR2121PBF | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: DIP8 Output current: -2...1A Power: 1W Number of channels: 1 Supply voltage: 12...18V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 5V Turn-on time: 150ns Turn-off time: 105ns |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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2ED020I12-FI | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-18 Output current: -2...1A Number of channels: 2 Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Supply voltage: 0...5V; 14...18V Voltage class: 1.2kV Protection: undervoltage UVP |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3 Mounting: THT Manufacturer series: H3 Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 256W Collector-emitter voltage: 1.2kV Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 |
Produkt ist nicht verfügbar |
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IKQ75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 440W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: PG-TO247-3-46 |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Mounting: THT Kind of package: tube Gate charge: 0.37µC Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 237W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 2 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Mounting: THT Manufacturer series: H3 Kind of package: tube Turn-on time: 70ns Gate charge: 0.37µC Turn-off time: 335ns Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 256W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Mounting: THT Kind of package: tube Gate charge: 530nC Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 300A Power dissipation: 440W Collector-emitter voltage: 1.2kV Technology: TRENCHSTOP™ 6 Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247PLUS-4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BTS4140N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.2A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 4.9...60V DC On-state resistance: 1Ω Technology: Classic PROFET Kind of output: N-Channel |
auf Bestellung 2349 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB3006PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA032N06N3GXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP Mounting: THT Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar On-state resistance: 3.2mΩ Gate-source voltage: ±20V Power dissipation: 41W Drain-source voltage: 60V Drain current: 84A Case: TO220FP Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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IM69D120V01XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Kind of integrated circuit: digital microphone Type of integrated circuit: driver/sensor Case: LLGA-5-1 Integrated circuit features: MEMS Mounting: SMD Supply voltage: 1.62...3.6V DC Interface: PDM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IM69D130V01XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC Kind of integrated circuit: digital microphone Type of integrated circuit: driver/sensor Case: LLGA-5-1 Integrated circuit features: MEMS Mounting: SMD Supply voltage: 1.62...3.6V DC Interface: PDM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLU120NPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 48W Case: IPAK Gate-source voltage: ±16V On-state resistance: 0.185Ω Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU3110ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 63A Power dissipation: 140W Case: IPAK Gate-source voltage: ±16V On-state resistance: 14mΩ Mounting: THT Gate charge: 34nC Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLU3410PBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Power dissipation: 52W Case: IPAK Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLU8743PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 160A Power dissipation: 135W Case: IPAK Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 39nC Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4410PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB Kind of channel: enhancement Technology: HEXFET® Case: TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 0.12µC On-state resistance: 10mΩ Gate-source voltage: ±20V Drain current: 96A Drain-source voltage: 100V Power dissipation: 250W |
auf Bestellung 147 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4410ZPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 97A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 550 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3710ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 56A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 140W |
auf Bestellung 2343 Stücke: Lieferzeit 14-21 Tag (e) |
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SPA15N60C3XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Pulsed drain current: 45A Power dissipation: 34W Case: PG-TO220 FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of channel: enhancement |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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AIHD15N60RATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Turn-on time: 26ns Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 600V Turn-off time: 319ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AIHD15N60RFATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 15A; 250W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 250W Case: DPAK Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Collector current: 15A Turn-on time: 28ns Gate-emitter voltage: ±20V Pulsed collector current: 45A Collector-emitter voltage: 600V Turn-off time: 177ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF2204PBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 210A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Power dissipation: 330W |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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DZ1070N22K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.2kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
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DZ1070N26K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.6kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
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DZ1070N28K | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single diode Max. forward voltage: 0.75V Load current: 1.07kA Max. off-state voltage: 2.8kV Max. forward impulse current: 41kA Case: BG-PB70AT-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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AUIRF7640S2TR | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 30W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPN80R1K4P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD Version: ESD Technology: CoolMOS™ P7 Case: PG-SOT223 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Gate charge: 10nC Power dissipation: 7W On-state resistance: 1.4Ω Drain current: 2.7A Gate-source voltage: ±20V Drain-source voltage: 800V Kind of package: reel Polarisation: unipolar |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4142N | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.4A Mounting: SMD Number of channels: 1 Case: SOT223-3 Supply voltage: 12...45V DC On-state resistance: 0.15Ω Technology: Classic PROFET Kind of output: N-Channel |
auf Bestellung 634 Stücke: Lieferzeit 14-21 Tag (e) |
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IHW30N135R5XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.35kV Collector current: 30A Power dissipation: 165W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 90A Mounting: THT Gate charge: 235nC Kind of package: tube Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Turn-off time: 680ns Technology: TRENCHSTOP™ |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Case: ATSLP-9-3 Mounting: SMD Supply voltage: 1.65...1.95V DC Number of channels: 4 Bandwidth: 0.05...6GHz Application: telecommunication Interface: MIPI Type of integrated circuit: RF switch Output configuration: SP4T |
Produkt ist nicht verfügbar |
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BSP762T | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Output current: 2A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 70mΩ Output voltage: 40V Technology: Classic PROFET Kind of integrated circuit: high-side |
auf Bestellung 2439 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP76E6433 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4 Mounting: SMD Technology: HITFET® Kind of integrated circuit: low-side Kind of output: N-Channel Case: PG-SOT223-4 Type of integrated circuit: power switch Number of channels: 1 Output current: 1.4A Output voltage: 42V |
auf Bestellung 2301 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB027N10N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 300W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IPB027N10N5ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRLR3636TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 99A Power dissipation: 143W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 1726 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS6163D | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 5.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO252-5-11 On-state resistance: 20mΩ Supply voltage: 5.5...62V DC Technology: Classic PROFET |
auf Bestellung 2072 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP752R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.15Ω Output voltage: 52V Technology: Classic PROFET |
auf Bestellung 2674 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS441RG | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 17A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO263-5 On-state resistance: 15mΩ Technology: Classic PROFET Output voltage: 4.75...43V |
auf Bestellung 977 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS5210L | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.8A Number of channels: 2 Kind of output: N-Channel Mounting: SMD Case: BSOP12 On-state resistance: 0.11Ω Supply voltage: 5.5...40V DC Technology: Classic PROFET |
auf Bestellung 576 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS716GXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.6...5.3A Mounting: SMD Number of channels: 4 Case: SO20 Supply voltage: 5.5...40V DC On-state resistance: 35mΩ Turn-on time: 270µs Technology: Classic PROFET Power dissipation: 3.6W Kind of output: N-Channel Turn-off time: 0.25ms |
auf Bestellung 890 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS4175SGA | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.175Ω Supply voltage: 6...52V DC Technology: Classic PROFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFR5410TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -13A Power dissipation: 66W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1586 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP742R | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Technology: Classic PROFET Output voltage: 40V |
auf Bestellung 1749 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP742RIXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.4A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SO8 On-state resistance: 0.25Ω Kind of package: reel Technology: Classic PROFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKW75N60TFKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Power dissipation: 428W Case: TO247-3 Mounting: THT Gate charge: 470nC Kind of package: tube Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 69ns Turn-off time: 401ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFS7730TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 75V Drain current: 174A Pulsed drain current: 984A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 407nC |
auf Bestellung 930 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR3910TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® Power dissipation: 52W |
auf Bestellung 1696 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR120ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.7A Power dissipation: 35W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IPD031N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 79A
Power dissipation: 94W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
68+ | 1.06 EUR |
75+ | 0.96 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
1000+ | 0.68 EUR |
2500+ | 0.66 EUR |
IPD034N06N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 167W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 888 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
26+ | 2.82 EUR |
33+ | 2.23 EUR |
38+ | 1.89 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
56+ | 1.29 EUR |
IPD075N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Power dissipation: 47W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 2455 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
132+ | 0.54 EUR |
153+ | 0.47 EUR |
164+ | 0.44 EUR |
178+ | 0.4 EUR |
191+ | 0.38 EUR |
196+ | 0.37 EUR |
IPD135N03LGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 814 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
120+ | 0.6 EUR |
139+ | 0.52 EUR |
146+ | 0.49 EUR |
159+ | 0.45 EUR |
169+ | 0.42 EUR |
IRF8736TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
ICE2HS01GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2112PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Number of channels: 2
Turn-on time: 205ns
Turn-off time: 145ns
Output current: -420...200mA
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; 1.6W
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Mounting: THT
Case: DIP14
Supply voltage: 10...20V DC
Number of channels: 2
Turn-on time: 205ns
Turn-off time: 145ns
Output current: -420...200mA
Kind of package: tube
Topology: MOSFET half-bridge
Voltage class: 600V
Operating temperature: -40...125°C
Power: 1.6W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.15 EUR |
IR2112SPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3+ | 23.84 EUR |
IR2112STRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; Ch: 2
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16-W
Output current: -420...200mA
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 205ns
Turn-off time: 145ns
auf Bestellung 906 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.13 EUR |
32+ | 2.26 EUR |
34+ | 2.13 EUR |
50+ | 2.06 EUR |
IRFR4105TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 25A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 25A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRFR4105ZTRL |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 30A; 48W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 48W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IR2121PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; high-/low-side,gate driver; DIP8; -2÷1A; 1W; Ch: 1; 5V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -2...1A
Power: 1W
Number of channels: 1
Supply voltage: 12...18V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 5V
Turn-on time: 150ns
Turn-off time: 105ns
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.26 EUR |
24+ | 2.99 EUR |
26+ | 2.82 EUR |
28+ | 2.57 EUR |
2ED020I12-FI |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-side,IGBT gate driver; -2÷1A
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-18
Output current: -2...1A
Number of channels: 2
Integrated circuit features: built-in comparator; built-in operational amplifier; integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 0...5V; 14...18V
Voltage class: 1.2kV
Protection: undervoltage UVP
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.28 EUR |
29+ | 2.53 EUR |
30+ | 2.4 EUR |
500+ | 2.32 EUR |
IKQ75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 256W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247-3; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 256W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKQ75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 440W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; PG-TO247-3-46
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 440W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: PG-TO247-3-46
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.2 EUR |
9+ | 8.09 EUR |
10+ | 7.65 EUR |
IKQ75N120CT2XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 237W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.37µC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 237W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 2
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
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IKY75N120CH3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 256W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3
Mounting: THT
Manufacturer series: H3
Kind of package: tube
Turn-on time: 70ns
Gate charge: 0.37µC
Turn-off time: 335ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 256W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKY75N120CS6XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 440W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4
Mounting: THT
Kind of package: tube
Gate charge: 530nC
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 440W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 6
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247PLUS-4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BTS4140N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 200mA; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.2A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 4.9...60V DC
On-state resistance: 1Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.63 EUR |
49+ | 1.47 EUR |
61+ | 1.17 EUR |
65+ | 1.1 EUR |
500+ | 1.09 EUR |
1000+ | 1.06 EUR |
IRFB3006PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.2 EUR |
24+ | 3.05 EUR |
25+ | 2.89 EUR |
IPA032N06N3GXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 84A; 41W; TO220FP
Mounting: THT
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 41W
Drain-source voltage: 60V
Drain current: 84A
Case: TO220FP
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IM69D120V01XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IM69D130V01XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Category: RTV - audio integrated circuits
Description: IC: driver/sensor; digital microphone; PDM; MEMS; 1.62÷3.6VDC
Kind of integrated circuit: digital microphone
Type of integrated circuit: driver/sensor
Case: LLGA-5-1
Integrated circuit features: MEMS
Mounting: SMD
Supply voltage: 1.62...3.6V DC
Interface: PDM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLU120NPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; 48W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 48W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 0.185Ω
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
63+ | 1.14 EUR |
98+ | 0.73 EUR |
IRLU3110ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 140W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Power dissipation: 140W
Case: IPAK
Gate-source voltage: ±16V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 34nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
29+ | 2.47 EUR |
52+ | 1.39 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
IRLU3410PBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Power dissipation: 52W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLU8743PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 160A; 135W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 160A
Power dissipation: 135W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.57 EUR |
54+ | 1.33 EUR |
59+ | 1.23 EUR |
81+ | 0.89 EUR |
87+ | 0.83 EUR |
IRFB4410PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 96A
Drain-source voltage: 100V
Power dissipation: 250W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 96A; 250W; TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Case: TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 0.12µC
On-state resistance: 10mΩ
Gate-source voltage: ±20V
Drain current: 96A
Drain-source voltage: 100V
Power dissipation: 250W
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
25+ | 2.86 EUR |
38+ | 1.89 EUR |
62+ | 1.16 EUR |
66+ | 1.09 EUR |
IRFB4410ZPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 97A; 230W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 97A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 550 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.33 EUR |
34+ | 2.13 EUR |
46+ | 1.59 EUR |
81+ | 0.89 EUR |
85+ | 0.84 EUR |
IRFR3710ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 140W
auf Bestellung 2343 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.66 EUR |
57+ | 1.27 EUR |
65+ | 1.12 EUR |
118+ | 0.61 EUR |
125+ | 0.58 EUR |
SPA15N60C3XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; Idm: 45A; 34W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Pulsed drain current: 45A
Power dissipation: 34W
Case: PG-TO220 FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of channel: enhancement
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.83 EUR |
24+ | 3 EUR |
25+ | 2.92 EUR |
26+ | 2.85 EUR |
50+ | 2.83 EUR |
AIHD15N60RATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 26ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 319ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AIHD15N60RFATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 15A; 250W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 250W
Case: DPAK
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Collector current: 15A
Turn-on time: 28ns
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 600V
Turn-off time: 177ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRF2204PBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 210A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 330W
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
32+ | 2.23 EUR |
DZ1070N22K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.2kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DZ1070N26K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.6kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
DZ1070N28K |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Load current: 1.07kA
Max. off-state voltage: 2.8kV
Max. forward impulse current: 41kA
Case: BG-PB70AT-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRF7640S2TR |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 30W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPN80R1K4P7ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Version: ESD
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 10nC
Power dissipation: 7W
On-state resistance: 1.4Ω
Drain current: 2.7A
Gate-source voltage: ±20V
Drain-source voltage: 800V
Kind of package: reel
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD
Version: ESD
Technology: CoolMOS™ P7
Case: PG-SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 10nC
Power dissipation: 7W
On-state resistance: 1.4Ω
Drain current: 2.7A
Gate-source voltage: ±20V
Drain-source voltage: 800V
Kind of package: reel
Polarisation: unipolar
auf Bestellung 2880 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
58+ | 1.24 EUR |
75+ | 0.96 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
1000+ | 0.47 EUR |
BTS4142N |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.4A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.4A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 12...45V DC
On-state resistance: 0.15Ω
Technology: Classic PROFET
Kind of output: N-Channel
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.95 EUR |
38+ | 1.89 EUR |
41+ | 1.77 EUR |
500+ | 1.73 EUR |
IHW30N135R5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.35kV; 30A; 165W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.35kV
Collector current: 30A
Power dissipation: 165W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 680ns
Technology: TRENCHSTOP™
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.42 EUR |
31+ | 2.3 EUR |
BGS14MPA9E6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Supply voltage: 1.65...1.95V DC
Number of channels: 4
Bandwidth: 0.05...6GHz
Application: telecommunication
Interface: MIPI
Type of integrated circuit: RF switch
Output configuration: SP4T
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSP762T |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Output current: 2A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 70mΩ
Output voltage: 40V
Technology: Classic PROFET
Kind of integrated circuit: high-side
auf Bestellung 2439 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.2 EUR |
41+ | 1.77 EUR |
43+ | 1.67 EUR |
1000+ | 1.63 EUR |
BSP76E6433 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.4A; Ch: 1; N-Channel; SMD; PG-SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Case: PG-SOT223-4
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.4A
Output voltage: 42V
auf Bestellung 2301 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
37+ | 1.97 EUR |
50+ | 1.43 EUR |
69+ | 1.04 EUR |
73+ | 0.99 EUR |
IPB027N10N3GATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 300W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 300W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB027N10N5ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRLR3636TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 99A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 99A
Power dissipation: 143W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1726 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
42+ | 1.73 EUR |
45+ | 1.6 EUR |
95+ | 0.76 EUR |
101+ | 0.71 EUR |
BTS6163D |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 20mΩ
Supply voltage: 5.5...62V DC
Technology: Classic PROFET
auf Bestellung 2072 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.46 EUR |
18+ | 4.09 EUR |
19+ | 3.88 EUR |
500+ | 3.72 EUR |
BSP752R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Output voltage: 52V
Technology: Classic PROFET
auf Bestellung 2674 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.86 EUR |
29+ | 2.55 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
1000+ | 1.52 EUR |
BTS441RG |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 17A; Ch: 1; N-Channel; SMD; TO263-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO263-5
On-state resistance: 15mΩ
Technology: Classic PROFET
Output voltage: 4.75...43V
auf Bestellung 977 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.25 EUR |
18+ | 4.02 EUR |
19+ | 3.79 EUR |
BTS5210L |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 2; N-Channel; SMD; BSOP12
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.8A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: BSOP12
On-state resistance: 0.11Ω
Supply voltage: 5.5...40V DC
Technology: Classic PROFET
auf Bestellung 576 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
14+ | 5.39 EUR |
24+ | 3 EUR |
26+ | 2.85 EUR |
250+ | 2.73 EUR |
BTS716GXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Technology: Classic PROFET
Power dissipation: 3.6W
Kind of output: N-Channel
Turn-off time: 0.25ms
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6÷5.3A; Ch: 4; N-Channel; SMD; SO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6...5.3A
Mounting: SMD
Number of channels: 4
Case: SO20
Supply voltage: 5.5...40V DC
On-state resistance: 35mΩ
Turn-on time: 270µs
Technology: Classic PROFET
Power dissipation: 3.6W
Kind of output: N-Channel
Turn-off time: 0.25ms
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.09 EUR |
22+ | 3.4 EUR |
23+ | 3.22 EUR |
BTS4175SGA |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.175Ω
Supply voltage: 6...52V DC
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR5410TRPBF | ![]() |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
44+ | 1.66 EUR |
62+ | 1.15 EUR |
71+ | 1.01 EUR |
142+ | 0.51 EUR |
150+ | 0.48 EUR |
BSP742R |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Technology: Classic PROFET
Output voltage: 40V
auf Bestellung 1749 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
22+ | 3.39 EUR |
33+ | 2.22 EUR |
55+ | 1.32 EUR |
58+ | 1.24 EUR |
BSP742RIXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 400mA; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.25Ω
Kind of package: reel
Technology: Classic PROFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IKW75N60TFKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 69ns
Turn-off time: 401ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
8+ | 9.08 EUR |
10+ | 7.35 EUR |
30+ | 7.15 EUR |
IRFS7730TRLPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 407nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 174A; Idm: 984A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 174A
Pulsed drain current: 984A
Power dissipation: 375W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 407nC
auf Bestellung 930 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
20+ | 3.73 EUR |
38+ | 1.89 EUR |
40+ | 1.79 EUR |
IRFR3910TRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 52W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 52W
auf Bestellung 1696 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
73+ | 0.99 EUR |
79+ | 0.91 EUR |
84+ | 0.86 EUR |
120+ | 0.6 EUR |
127+ | 0.57 EUR |
500+ | 0.56 EUR |
1000+ | 0.54 EUR |
IRFR120ZTRPBF |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH