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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Output voltage: 600V
Mounting: THT
Operating temperature: -40...125°C
Input voltage: 13.5...18.5V
Maximum output current: 15A
Frequency: 20kHz
Supply voltage: 14.5...18.5V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
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BSC009NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2253B0CCE411C&compId=BSC009NE2LS5-DTE.pdf?ci_sign=cc7dc6f544cdea8ffdc22bc994ff5b04e5a9b00b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0 Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.58 EUR
8+10.02 EUR
10+9.84 EUR
Mindestbestellmenge: 7
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BAR9002ELE6327XTMA1 INFINEON TECHNOLOGIES Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e Category: Unclassified
Description: BAR9002ELE6327XTMA1
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
15000+0.083 EUR
Mindestbestellmenge: 15000
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
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30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 BSP322PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
109+0.66 EUR
121+0.59 EUR
152+0.47 EUR
161+0.44 EUR
Mindestbestellmenge: 65
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ISZ0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.61 EUR
Mindestbestellmenge: 5000
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ISC0702NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 135A; 100W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+0.83 EUR
Mindestbestellmenge: 5000
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IPP075N15N3GXKSA1 IPP075N15N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
On-state resistance: 7.5mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 150V
Polarisation: unipolar
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.25 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 17
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IPP126N10N3GXKSA1 IPP126N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
On-state resistance: 12.6mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1 Stücke:
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1+71.5 EUR
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BCV27E6327 BCV27E6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
225+0.32 EUR
396+0.18 EUR
857+0.084 EUR
906+0.079 EUR
Mindestbestellmenge: 167
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FS150R12KE3BOSA1 INFINEON TECHNOLOGIES Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388 Category: IGBT modules
Description: Module: IGBT
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
10+184.84 EUR
Mindestbestellmenge: 10
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IGZ100N65H5XKSA1 IGZ100N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B38AF53C07CFA8&compId=IGZ100N65H5XKSA1-DTE.pdf?ci_sign=46f30b547367da2b7884cb375a23f6457f242998 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 IPN80R4K5P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2068 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
102+0.7 EUR
114+0.63 EUR
131+0.55 EUR
Mindestbestellmenge: 87
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IPN80R600P7ATMA1 IPN80R600P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 IPN80R2K4P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R3K3P7ATMA1 IPN80R3K3P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 IPN80R750P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 BFS481H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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SGB02N120 SGB02N120 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2 Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Produkt ist nicht verfügbar
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Output voltage: 600V
Mounting: THT
Operating temperature: -40...125°C
Input voltage: 13.5...18.5V
Maximum output current: 15A
Frequency: 20kHz
Supply voltage: 14.5...18.5V
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+12.63 EUR
42+11.37 EUR
Mindestbestellmenge: 14
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BSC009NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2253B0CCE411C&compId=BSC009NE2LS5-DTE.pdf?ci_sign=cc7dc6f544cdea8ffdc22bc994ff5b04e5a9b00b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKCM15H60GAXKMA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BACE685ADE5B3D7&compId=IKCM15H60GA.pdf?ci_sign=b05a44ba28f3534652439353305f4e3dde92d0c0
IKCM15H60GAXKMA2
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 25.2W
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.58 EUR
8+10.02 EUR
10+9.84 EUR
Mindestbestellmenge: 7
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BAR9002ELE6327XTMA1 Infineon-BAR90-02EL-DS-v01_00-EN.pdf?fileId=5546d46265f064ff01663895cd694e6e
Hersteller: INFINEON TECHNOLOGIES
Category: Unclassified
Description: BAR9002ELE6327XTMA1
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15000+0.083 EUR
Mindestbestellmenge: 15000
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IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 428W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.61 EUR
Mindestbestellmenge: 30
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BSP322PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA921AA3AD6611CC&compId=BSP322PH6327XTSA1-dte.pdf?ci_sign=c8cce04bab6e5a8cf722ea0efeae955fac952ad3
BSP322PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1A; 1.8W; PG-SOT223
Technology: SIPMOS™
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -1A
On-state resistance: 0.8Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: PG-SOT223
auf Bestellung 841 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
109+0.66 EUR
121+0.59 EUR
152+0.47 EUR
161+0.44 EUR
Mindestbestellmenge: 65
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ISZ0702NLSATMA1 Infineon-ISZ0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd7e5c9c6e0d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 40000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.61 EUR
Mindestbestellmenge: 5000
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ISC0702NLSATMA1 Infineon-ISC0702NLS-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd0178fd752aa46df2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 135A; 100W; PG-TDSON-8; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 135A
Power dissipation: 100W
Case: PG-TDSON-8
Gate-source voltage: 20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+0.83 EUR
Mindestbestellmenge: 5000
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IPP075N15N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC81F7082D211C&compId=IPP075N15N3G-DTE.pdf?ci_sign=2206d84c866b44030e934a449c4dbb0ec14767f4
IPP075N15N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; 300W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
On-state resistance: 7.5mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 150V
Polarisation: unipolar
auf Bestellung 477 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
40+1.79 EUR
43+1.69 EUR
Mindestbestellmenge: 17
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IPP126N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBA5EB3E6F411C&compId=IPP126N10N3G-DTE.pdf?ci_sign=35a144c2f33ca71b6a8eca3700b3927fd3fd0b32
IPP126N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO220-3
Mounting: THT
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
On-state resistance: 12.6mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
Drain current: 58A
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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BCV27E6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869911BE77406469&compId=BCV27E6327.pdf?ci_sign=0b7df3e49f8a209e013846618a78af40dc82aaae
BCV27E6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.36W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
auf Bestellung 2764 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
225+0.32 EUR
396+0.18 EUR
857+0.084 EUR
906+0.079 EUR
Mindestbestellmenge: 167
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FS150R12KE3BOSA1 Infineon-FS150R12KE3-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311d745388
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+184.84 EUR
Mindestbestellmenge: 10
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IGZ100N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B38AF53C07CFA8&compId=IGZ100N65H5XKSA1-DTE.pdf?ci_sign=46f30b547367da2b7884cb375a23f6457f242998
IGZ100N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 101A; 268W; TO247-4; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 268W
Case: TO247-4
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Turn-on time: 40ns
Turn-off time: 485ns
Gate-emitter voltage: ±20V
Collector current: 101A
Pulsed collector current: 400A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IPN80R4K5P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFE5BB2BC3FF3D1&compId=IPN80R4K5P7.pdf?ci_sign=181b854c7a65f95ea9d97b62a47f753309e2776a
IPN80R4K5P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 4.5Ω
Drain current: 1A
Power dissipation: 6W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
auf Bestellung 2068 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
102+0.7 EUR
114+0.63 EUR
131+0.55 EUR
Mindestbestellmenge: 87
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IPN80R600P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDF1FF656693D1&compId=IPN80R600P7.pdf?ci_sign=74698a736421a2fe8081b11c8402fd2740b28ada
IPN80R600P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 0.6Ω
Drain current: 5.5A
Power dissipation: 7.4W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R2K4P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDB6243C3F13D1&compId=IPN80R2K4P7.pdf?ci_sign=fc60aaeba15bb57be6f1214d4477212da724015e
IPN80R2K4P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 8nC
On-state resistance: 2.4Ω
Drain current: 1.7A
Power dissipation: 6.3W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R3K3P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDA2691FCDB3D1&compId=IPN80R3K3P7.pdf?ci_sign=cb7c353b6e773d711c2d3bf644455832fa1bcb8a
IPN80R3K3P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 6nC
On-state resistance: 3.3Ω
Drain current: 1.3A
Power dissipation: 6.1W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPN80R750P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFDE5E5617E13D1&compId=IPN80R750P7.pdf?ci_sign=9a67d757292591395f7dbeffbc47c891b90039e1
IPN80R750P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Case: PG-SOT223
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 0.75Ω
Drain current: 4.6A
Power dissipation: 7.2W
Gate-source voltage: ±20V
Drain-source voltage: 800V
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPD200N15N3GATMA1 Infineon-IPD_BIP_200N15N3-DS-v02_07-en.pdf?fileId=db3a304319c6f18c0119cd1cc23279be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 40A; Idm: 200A; 150W
Power dissipation: 150W
Case: PG-TO252-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
On-state resistance: 20mΩ
Gate-source voltage: ±20V
Drain current: 40A
Drain-source voltage: 150V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
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BFS481H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BC2B95CA8C9820&compId=BFS481.pdf?ci_sign=0ca4fc8b068827a5810c381b8177efadd7b9a937
BFS481H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 20mA; 0.175W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 12V
Collector current: 20mA
Power dissipation: 0.175W
Case: SOT363
Current gain: 70...140
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Produkt ist nicht verfügbar
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SGB02N120 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58D27D01791E74A&compId=SGB02N120.pdf?ci_sign=716fc339a4ef5be4f99c09e2af256bd2f01bdce2
SGB02N120
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 2.8A; 62W; D2PAK
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 2.8A
Power dissipation: 62W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 9.6A
Mounting: SMD
Kind of package: reel
Turn-on time: 40ns
Turn-off time: 375ns
Produkt ist nicht verfügbar
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