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BSP317PH6327XTSA1 BSP317PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2429 Stücke:
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64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPD122N10N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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IPB65R190C7ATMA1 IPB65R190C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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S29GL01GS12DHIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12DHIV20 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12DHVV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFIV10 INFINEON TECHNOLOGIES Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFIV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S29GL01GS12TFVV20 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHBV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHBV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHIV13 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHIV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHIV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHVV20 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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S70GL02GS12FHVV23 INFINEON TECHNOLOGIES Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
Mindestbestellmenge: 117
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ISC240P06LMATMA1 INFINEON TECHNOLOGIES Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BFR35APE6327HTSA1 BFR35APE6327HTSA1 INFINEON TECHNOLOGIES INFNS22473-1.pdf?t.download=true&u=5oefqw Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BSP135IXTSA1 INFINEON TECHNOLOGIES Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.2 EUR
Mindestbestellmenge: 1000
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IRF7842TRPBF IRF7842TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2118 Stücke:
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44+1.64 EUR
59+1.22 EUR
72+1 EUR
81+0.89 EUR
100+0.8 EUR
Mindestbestellmenge: 44
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FF100R12W1T7EB11BPSA1 INFINEON TECHNOLOGIES FF100R12W1T7EB11BPSA1.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
Produkt ist nicht verfügbar
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PVI5013RSPBF PVI5013RSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82 Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
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IPB65R190CFDATMA1 IPB65R190CFDATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB65R190CFDAATMA1 INFINEON TECHNOLOGIES Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.76 EUR
Mindestbestellmenge: 1000
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IPB65R190CFDATMA2 INFINEON TECHNOLOGIES DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.17 EUR
Mindestbestellmenge: 1000
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IPB65R065C7ATMA1 IPB65R065C7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA2 INFINEON TECHNOLOGIES Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR401WH6327XTSA1
+1
 		BCR401WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
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IMBG120R030M1HXTMA1 INFINEON TECHNOLOGIES Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
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1000+13.86 EUR
Mindestbestellmenge: 1000
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BCR430UXTSA2 INFINEON TECHNOLOGIES Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395 Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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CY7C1371KV33-100AXI INFINEON TECHNOLOGIES Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
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IRF250P224 IRF250P224 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
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IRFP4368PBF IRFP4368PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
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IRLS3813TRLPBF IRLS3813TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
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IRLS3034TRLPBF IRLS3034TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRLS3034 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
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BFS483H6327XTSA1 BFS483H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC20A4F8F5353D7&compId=BFS483H6327.pdf?ci_sign=61c3d157ad5086885e7ea2f5e876061a78c1bec1 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 65mA
Collector-emitter voltage: 12V
Frequency: 8GHz
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147+0.49 EUR
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BSL215CH6327XTSA1 BSL215CH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C25C1489EFE469&compId=BSL215CH6327XTSA1.pdf?ci_sign=0a00f3acfd22f79b2d11b8c2d73959540f65466f Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
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103+0.7 EUR
152+0.47 EUR
201+0.36 EUR
207+0.35 EUR
222+0.32 EUR
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ICE2HS01G ICE2HS01G INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
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BC847SH6327XTSA1 BC847SH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449 Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
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313+0.23 EUR
544+0.13 EUR
715+0.1 EUR
807+0.089 EUR
926+0.077 EUR
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BCM856SH6327 BCM856SH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
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253+0.28 EUR
385+0.19 EUR
511+0.14 EUR
1000+0.13 EUR
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IR2128STRPBF INFINEON TECHNOLOGIES ir2127.pdf?fileId=5546d462533600a4015355c868861696 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
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ISA170230C04LMDSXTMA1 INFINEON TECHNOLOGIES ISA170230C04LMDSXTMA1.pdf Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
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BSC022N04LS6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
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S25FS512SDSBHM210 INFINEON TECHNOLOGIES Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSAGBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FS01GSDSBHM210 INFINEON TECHNOLOGIES Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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IPD650P06NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
Gate charge: 39nC
On-state resistance: 65mΩ
Gate-source voltage: 20V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: P-MOSFET
Polarisation: P
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XMC4500F100F1024ACXQMA1 XMC4500F100F1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
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XMC4500F144F1024ACXQMA1 XMC4500F144F1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4500F144K1024ACXQMA1 XMC4500F144K1024ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
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XMC4504F144K512ACXQMA1 XMC4504F144K512ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
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IRFSL3206PBF IRFSL3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
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IRFSL4310ZPBF IRFSL4310ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IAUA170N10S5N031AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
Produkt ist nicht verfügbar
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IPW65R080CFDFKSA1 IPW65R080CFDFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSP317PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA9219ACB51A51CC&compId=BSP317PH6327XTSA1-dte.pdf?ci_sign=a936721dcc5d1bbb427c56fd5eca3034a2449eee
BSP317PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.43A; 1.8W; PG-SOT223
Kind of channel: enhancement
Case: PG-SOT223
Mounting: SMD
Type of transistor: P-MOSFET
Technology: SIPMOS™
Drain-source voltage: -250V
Drain current: -0.43A
On-state resistance: 4Ω
Power dissipation: 1.8W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 2429 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
64+1.13 EUR
95+0.76 EUR
140+0.51 EUR
250+0.44 EUR
500+0.4 EUR
1000+0.36 EUR
2000+0.34 EUR
Mindestbestellmenge: 64
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IPD122N10N3GATMA1 Infineon-IPD122N10N3_G-DS-v02_03-en.pdf?fileId=db3a30432239cccd0122604a0b2e7f65
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.37 EUR
63+1.15 EUR
68+1.06 EUR
73+0.98 EUR
81+0.89 EUR
100+0.84 EUR
200+0.79 EUR
500+0.73 EUR
1000+0.72 EUR
Mindestbestellmenge: 53
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IPB65R190C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FB74953A71BF&compId=IPB65R190C7-DTE.pdf?ci_sign=de5cd77f6bd4c6f81d65e42a03bfc2b86172d885
IPB65R190C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; 72W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 72W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHIV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12DHVV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFIV10 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFIV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GS12TFVV20 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 120ns; TSOP56; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Case: TSOP56
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHBV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Application: automotive
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV13 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHIV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...85°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV20 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: in-tray
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S70GL02GS12FHVV23 Infineon-S70GL02GS_2Gbit_(256Mbytes)_3.0V_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed148734d74&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; CFI,parallel; 120ns; BGA64; parallel
Operating temperature: -40...105°C
Mounting: SMD
Access time: 120ns
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Case: BGA64
Interface: CFI; parallel
Type of integrated circuit: FLASH memory
Kind of package: reel; tape
Kind of memory: NOR
Kind of interface: parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6302VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E02D7CE8486469&compId=BAT6302VH6327XTSA1.pdf?ci_sign=37345c6b5c4c72fa5d20b81471d690570a6d7645
BAT6302VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 410 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
147+0.49 EUR
173+0.41 EUR
317+0.23 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
ISC240P06LMATMA1 Infineon-ISC240P06LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee0185a9e4b2c536ec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 59A; Idm: 236A; 188W
Case: PG-TDSON-8
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain current: 59A
Drain-source voltage: 60V
Power dissipation: 188W
Pulsed drain current: 236A
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Produkt ist nicht verfügbar
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BFR35APE6327HTSA1 INFNS22473-1.pdf?t.download=true&u=5oefqw
BFR35APE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 45mA; 280mW; SOT23
Case: SOT23
Mounting: SMD
Type of transistor: NPN
Kind of transistor: RF
Collector current: 45mA
Power dissipation: 0.28W
Collector-emitter voltage: 15V
Current gain: 70...140
Frequency: 5GHz
Polarisation: bipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP135IXTSA1 Infineon-BSP135I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a4188551361e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.2 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7842TRPBF description pVersion=0046&contRep=ZT&docId=E221AC935A3E8EF1A303005056AB0C4F&compId=irf7842pbf.pdf?ci_sign=744a801cb6d39a17fc5323a2cd421e1967a6254c
IRF7842TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 2118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
59+1.22 EUR
72+1 EUR
81+0.89 EUR
100+0.8 EUR
Mindestbestellmenge: 44
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FF100R12W1T7EB11BPSA1 FF100R12W1T7EB11BPSA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; motors; photovoltaics
Semiconductor structure: common emitter; transistor/transistor
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Gate-emitter voltage: ±20V
Case: AG-EASY1B
Topology: IGBT x2; NTC thermistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVI5013RSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE789CF03423360A745&compId=pvi5013r.pdf?ci_sign=2896a267ac238fb8d92b31fc582bd7c80dbfef82
PVI5013RSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 3.75kV; Gull wing 8
Mounting: SMD
Case: Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI5013RPbF
Turn-off time: 25µs
Turn-on time: 5ms
Number of channels: 2
Insulation voltage: 3.75kV
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2FCE3F865B1BF&compId=IPB65R190CFD-DTE.pdf?ci_sign=29fd38479d7b134b2403a81f7a99daed4ae2ab33
IPB65R190CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDAATMA1 Infineon-IPX65R190CFDA-DS-v02_00-en.pdf?fileId=db3a3043399628450139afa2346920a1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 17.5A; 151W; D2PAK,TO263; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 151W
Case: D2PAK; TO263
Gate-source voltage: 20V
On-state resistance: 171mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.76 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R190CFDATMA2 DS_IPX65R190CFD__2_2.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a30432fd0c54a012fded065a8309b
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPB65R190CFDATMA2
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.17 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R065C7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AEF2EB2A880771BF&compId=IPB65R065C7-DTE.pdf?ci_sign=fea8ec4937df9f9dc590a5a6483e4546548d8ff6
IPB65R065C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB180N06S4H1ATMA2 Infineon-IPB180N06S4-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203ccc9314178e
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 180A; Idm: 720A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Pulsed drain current: 720A
Power dissipation: 250W
Case: PG-TO263-7-3
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCR401WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE994C27E55264558BF&compId=BCR401W.pdf?ci_sign=6541f52c2999ab839e95193870c4f087e5a9dafd
BCR401WH6327XTSA1
+1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Mounting: SMD
Number of channels: 1
Case: SOT343
Kind of integrated circuit: current regulator; LED driver
Operating voltage: 1.2...18V DC
Integrated circuit features: linear dimming
Topology: single transistor
Type of integrated circuit: driver
Output current: 10...60mA
Produkt ist nicht verfügbar
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IMBG120R030M1HXTMA1 Infineon-IMBG120R030M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0eca774325c
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IMBG120R030M1HXTMA1
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+13.86 EUR
Mindestbestellmenge: 1000
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BCR430UXTSA2 Infineon-BCR%20430U-DataSheet-v01_03-EN.pdf?fileId=5546d4627506bb32017541202bc15395
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Topology: single transistor
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Operating voltage: 6...42V DC
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Mounting: SMD
Produkt ist nicht verfügbar
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY7C1371KV33-100AXI Infineon-CY7C1371KV33_CY7C1371KVE33_CY7C1373KV33_18-Mbit_(512_K_36_1_M_18)_Flow-Through_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed99c465b40&utm_source=cypress&utm_medium=refe
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; TQFP100; parallel; -40÷85°C
Memory organisation: 512kx36bit
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 18Mb SRAM
Frequency: 100MHz
Produkt ist nicht verfügbar
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IRF250P224 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5D7D7C8750A18&compId=IRF250P224.pdf?ci_sign=b596cfd627d254660d4e86550909ac67ff33c44d
IRF250P224
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 203nC
Kind of package: tube
Technology: StrongIRFET™
Produkt ist nicht verfügbar
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IRFP4368PBF description pVersion=0046&contRep=ZT&docId=E1C04E6B43C06FF1A6F5005056AB5A8F&compId=irfp4368pbf.pdf?ci_sign=9eb47e6406d9302930fa1feedb7fd32221717365
IRFP4368PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 350A; 520W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 350A
Power dissipation: 520W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 380nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRLS3813TRLPBF pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EC004893E39A143&compId=IRLS3813TRLPBF.pdf?ci_sign=d5c73a2dcebb5123fbcd021d4dd0c7ce98082d0b
IRLS3813TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 156A; 195W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 156A
Power dissipation: 195W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
On-state resistance: 1.95mΩ
Gate-source voltage: ±20V
Gate charge: 55nC
Produkt ist nicht verfügbar
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IRLS3034TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1363FB77DB5EA&compId=IRLS3034TRLPBF.pdf?ci_sign=b1cd31c779cd5fbc0f101d0a52e7c4beab36a4a9
IRLS3034TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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AUIRLS3034 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8B1A083EA96143&compId=AUIRLS3034.pdf?ci_sign=ff5db222f1e89365072581b30ecf44c64c41980f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 1.7mΩ
Gate-source voltage: ±20V
Gate charge: 108nC
Produkt ist nicht verfügbar
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BFS483H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC20A4F8F5353D7&compId=BFS483H6327.pdf?ci_sign=61c3d157ad5086885e7ea2f5e876061a78c1bec1
BFS483H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 12V; 65mA; 0.45W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Power dissipation: 0.45W
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 65mA
Collector-emitter voltage: 12V
Frequency: 8GHz
auf Bestellung 2721 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
147+0.49 EUR
Mindestbestellmenge: 129
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BSL215CH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C25C1489EFE469&compId=BSL215CH6327XTSA1.pdf?ci_sign=0a00f3acfd22f79b2d11b8c2d73959540f65466f
BSL215CH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1.5/-1.5A; 0.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1.5/-1.5A
Power dissipation: 0.5W
Case: PG-TSOP-6
Gate-source voltage: ±12V
On-state resistance: 0.173/0.25Ω
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
auf Bestellung 2377 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
152+0.47 EUR
201+0.36 EUR
207+0.35 EUR
222+0.32 EUR
Mindestbestellmenge: 103
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ICE2HS01G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE39087F58AA259&compId=ICE2HS01G.pdf?ci_sign=57971471c0680ec692093ffb8daf73882b579381
ICE2HS01G
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 0.03÷1MHz; PG-DSO-20; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: resonant mode controller
Frequency: 30kHz...1MHz
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -25...125°C
Topology: push-pull
Application: SMPS
Operating voltage: 11...18V DC
Produkt ist nicht verfügbar
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Mechanical mounting: screw
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: thyristor
Gate current: 250mA
Load current: 400A
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Max. off-state voltage: 2.6kV
Case: BG-PB60-1
Semiconductor structure: double series
Produkt ist nicht verfügbar
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BC847SH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5E4F171F1C469&compId=BC847SH6327.pdf?ci_sign=9f0621617777e5af35a6ad272b9ffc3005813449
BC847SH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 45V
Frequency: 250MHz
auf Bestellung 1526 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
544+0.13 EUR
715+0.1 EUR
807+0.089 EUR
926+0.077 EUR
Mindestbestellmenge: 313
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BCM856SH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5C1DE6A1A2469&compId=BCM856SH6327.pdf?ci_sign=8c374ff5ec8db9f2d76774cc1d853c230dde9778
BCM856SH6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.25W; SOT363
Type of transistor: PNP x2
Mounting: SMD
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.25W
Polarisation: bipolar
Collector-emitter voltage: 65V
Frequency: 250MHz
auf Bestellung 1715 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
253+0.28 EUR
385+0.19 EUR
511+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 193
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IR2128STRPBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.76 EUR
Mindestbestellmenge: 2500
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ISA170230C04LMDSXTMA1 ISA170230C04LMDSXTMA1.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: ISA170230C04LMDSXTMA1
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.59 EUR
Mindestbestellmenge: 4000
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BSC022N04LS6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD83367A3120C4&compId=BSC022N04LS6ATMA1.pdf?ci_sign=e2229754fae00c68648b3afc496feb6389ec8b62
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 100A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 79W
Case: PG-TDSON-8 FL
On-state resistance: 2.2mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 6
Produkt ist nicht verfügbar
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S25FS512SDSBHM210 Infineon-S25FS512S_512_Mb_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_Non-Volatile_Flash-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed681a356fe&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 80MHz; 1.7÷2V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSAGBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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S70FS01GSDSBHM210 Infineon-S70FS01GS_1-Gb_(128_MB)_1.8_V_FS-S_Flash-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6777356e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 80MHz; 1.7÷2V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 80MHz
Operating voltage: 1.7...2V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
Produkt ist nicht verfügbar
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IPD650P06NMATMA1 Infineon-IPD650P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2db2100b1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 60V; 22A; 83W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 22A
Gate charge: 39nC
On-state resistance: 65mΩ
Gate-source voltage: 20V
Power dissipation: 83W
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: P-MOSFET
Polarisation: P
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
XMC4500F100F1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F100F1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 18
Number of 16bit timers: 26
Number of inputs/outputs: 55
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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XMC4500F144F1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144F1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Produkt ist nicht verfügbar
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XMC4500F144K1024ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4500F144K1024ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 160kBSRAM,1024kBFLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; EBI; Ethernet; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Family: XMC4500
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Memory: 160kB SRAM; 1MB FLASH
Kind of core: 32-bit
Case: PG-LQFP-144
Produkt ist nicht verfügbar
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XMC4504F144K512ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4504F144K512ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 128kBSRAM,512kBFLASH
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of 16bit timers: 26
Number of inputs/outputs: 91
Kind of core: 32-bit
Memory: 128kB SRAM; 512kB FLASH
Type of integrated circuit: ARM microcontroller
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Interface: EBI; GPIO; I2C; I2S; LIN; SPI; UART; USB
Case: PG-LQFP-144
Family: XMC4500
Produkt ist nicht verfügbar
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IRFSL3206PBF pVersion=0046&contRep=ZT&docId=E221C696F861C1F1A303005056AB0C4F&compId=irfs3206pbf.pdf?ci_sign=f600ccb40e2eaf3741d1c40e5d7debb5a1899fde
IRFSL3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; TO262
Case: TO262
Mounting: THT
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET
Polarisation: unipolar
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IRFSL4310ZPBF pVersion=0046&contRep=ZT&docId=E221B373B3D7CCF1A303005056AB0C4F&compId=irfb4310zpbf.pdf?ci_sign=c4ace11945af6befebfd380d4a1a0655b80c000d
IRFSL4310ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: TO262
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IAUA170N10S5N031AUMA1 Infineon-IAUA170N10S5N031-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39952b0b32
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Case: PG-HSOF-5
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Gate charge: 88nC
On-state resistance: 4mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Power dissipation: 197W
Pulsed drain current: 519A
Drain current: 22A
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IPW65R080CFDFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBBB3522BD531BF&compId=IPW65R080CFD-DTE.pdf?ci_sign=9425d7ac9df299ed19596fbda93012c2681a7a80
IPW65R080CFDFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 43.3A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 43.3A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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