Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (151647) > Seite 2494 nach 2528
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BAR6403WE6327HTSA1 | INFINEON TECHNOLOGIES |
 Category: Diodes - othersDescription: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
auf Bestellung 1835 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6404E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
auf Bestellung 1798 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR66E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series Semiconductor structure: double series Features of semiconductor devices: PIN Kind of package: reel; tape Case: SOT23 Mounting: SMD Type of diode: switching Load current: 0.2A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. forward impulse current: 12A Max. off-state voltage: 150V |
auf Bestellung 4510 Stücke: Lieferzeit 14-21 Tag (e) |
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BA592E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape Type of diode: switching Max. off-state voltage: 35V Load current: 0.1A Case: SOD323 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Leakage current: 20nA Capacitance: 0.6...1.4pF |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6303WE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOD323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
auf Bestellung 2619 Stücke: Lieferzeit 14-21 Tag (e) |
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BC817UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 170MHz Kind of transistor: complementary pair |
auf Bestellung 7003 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Kind of package: reel; tape Electrical mounting: SMT Load current: 0.9A Max. forward impulse current: 5A Max. off-state voltage: 30V Type of bridge rectifier: single-phase Features of semiconductor devices: Schottky |
auf Bestellung 4435 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS4002ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 0.2A Max. forward impulse current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Case: SOT143 Features of semiconductor devices: Schottky |
auf Bestellung 278 Stücke: Lieferzeit 14-21 Tag (e) |
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BB640E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: RF Semiconductor structure: single diode Case: SOD323 Type of diode: varicap Capacitance: 2.8...76pF Leakage current: 0.2µA Load current: 20mA Max. off-state voltage: 30V |
auf Bestellung 2181 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBTA06UPNE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.33W Case: SC74 Mounting: SMD Frequency: 100MHz |
auf Bestellung 860 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLML9303TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 6859 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R360P7SAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 59.5W Case: PG-TO252-3 Gate-source voltage: ±16V On-state resistance: 0.36Ω Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1591 Stücke: Lieferzeit 14-21 Tag (e) |
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ICL8001GXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver Integrated circuit features: phase-cut dimming; soft-start function Kind of integrated circuit: LED driver; PFC controller; SMPS controller Topology: flyback Mounting: SMD Case: PG-DSO-8 Operating voltage: 10.5...26V DC Type of integrated circuit: driver Number of channels: 1 |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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IR1161LTRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5 Case: SOT23-5 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 590mW Supply voltage: 4.75...18V DC Output current: -2.5...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
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IR11688STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 625mW Supply voltage: 4.75...18V DC Output current: -4...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IR1169STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of integrated circuit: gate driver Topology: flyback; push-pull; resonant LLC Voltage class: 200V Operating temperature: -40...125°C Power: 625mW Supply voltage: 11...19V DC Output current: -4...1A Type of integrated circuit: driver Application: SMPS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ICE5QR1070AZXKLA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80% Power: 58/32W Input voltage: 80...265V Output current: 0.4A Case: DIP7 Mounting: THT Operating temperature: -40...150°C Topology: flyback Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Application: SMPS Duty cycle factor: 0...80% Number of channels: 1 Operating voltage: 10...25.5V DC Breakdown voltage: 700V Frequency: 20kHz |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP740H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: HBT; RF Collector-emitter voltage: 13V Collector current: 45mA Power dissipation: 0.16W Case: SOT343 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 44GHz |
auf Bestellung 2496 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50055-1TMB | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 55A Mounting: THT Number of channels: 1 Case: PG-TO220-7-11 Supply voltage: 5...34V DC On-state resistance: 4.4mΩ Technology: High Current PROFET Kind of output: N-Channel |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
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BTS50080-1TMB | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT Case: PG-TO220-7-12 Supply voltage: 5.5...38V DC On-state resistance: 7mΩ Output current: 9.5A Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Technology: High Current PROFET Kind of integrated circuit: high-side Mounting: THT |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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BFR182WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323 Type of transistor: NPN Polarisation: bipolar Power dissipation: 0.25W Case: SOT323 Mounting: SMD Collector-emitter voltage: 12V Frequency: 8GHz Kind of transistor: RF Kind of package: reel; tape Collector current: 35mA |
auf Bestellung 1287 Stücke: Lieferzeit 14-21 Tag (e) |
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BCP5616H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT223 Mounting: SMD Frequency: 100MHz |
auf Bestellung 560 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX53H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 125MHz |
auf Bestellung 509 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX5610H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
auf Bestellung 1745 Stücke: Lieferzeit 14-21 Tag (e) |
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BCX56H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 2W Case: SOT89 Mounting: SMD Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRF5802TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 0.9A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 1771 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLMS2002TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.5A Power dissipation: 2W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSL207SPH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6 Case: PG-TSOP-6 Mounting: SMD Gate-source voltage: ±12V Kind of channel: enhancement Technology: OptiMOS™ P Type of transistor: P-MOSFET Polarisation: unipolar Drain current: -6A Drain-source voltage: -20V On-state resistance: 41mΩ Power dissipation: 2W |
auf Bestellung 2852 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2132JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Case: PLCC44 Mounting: SMD Operating temperature: -40...125°C Output current: -420...200mA Turn-off time: 475ns Turn-on time: 675ns Number of channels: 6 Power: 2W Supply voltage: 10...20V DC Voltage class: 600V Type of integrated circuit: driver Kind of package: tube |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2135JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Case: PLCC44 Mounting: SMD Operating temperature: -40...125°C Output current: -420...200mA Turn-off time: 700ns Turn-on time: 750ns Number of channels: 6 Power: 2W Supply voltage: 10...20V DC Voltage class: 0.6/1.2kV Type of integrated circuit: driver Kind of package: tube |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2233JPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Case: PLCC44 Mounting: SMD Operating temperature: -40...125°C Output current: -420...200mA Turn-off time: 700ns Turn-on time: 750ns Number of channels: 6 Power: 2W Supply voltage: 10...20V DC Voltage class: 1.2kV Type of integrated circuit: driver Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Kind of package: tube |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFL4310TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Power dissipation: 2.1W Case: SOT223 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFB7434PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 317A Power dissipation: 294W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 216nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® Trade name: StrongIRFET |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2181SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -2.3...1.9A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Protection: undervoltage UVP Voltage class: 600V Turn-off time: 0.22µs Turn-on time: 180ns Power: 625mW Integrated circuit features: charge pump; integrated bootstrap functionality |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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SPW20N60S5 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 208W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLZ34NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 27A Power dissipation: 56W Case: TO220AB Mounting: THT Kind of channel: enhancement Features of semiconductor devices: logic level On-state resistance: 35mΩ Gate-source voltage: ±16V Gate charge: 16.7nC Kind of package: tube |
auf Bestellung 154 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRLZ34NSTRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 21A Power dissipation: 68W Case: D2PAK Mounting: SMD Kind of channel: enhancement On-state resistance: 35mΩ Gate-source voltage: ±16V Pulsed drain current: 110A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3415PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 43A Power dissipation: 200W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 42mΩ Mounting: THT Gate charge: 133.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP3703PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 210A Power dissipation: 230W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 209nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP129H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 50mA Power dissipation: 1.8W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Kind of channel: depletion |
auf Bestellung 1543 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 185ns |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Semiconductor structure: single diode Mounting: SMD Type of diode: varicap Capacitance: 0.45...7.2pF Leakage current: 0.2µA Load current: 20mA Max. off-state voltage: 30V Kind of package: reel; tape Features of semiconductor devices: RF Case: SC79 |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.2V Max. off-state voltage: 50V |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Mounting: SMD On-state resistance: 12.3mΩ Drain current: 55A Gate-source voltage: ±20V Power dissipation: 66W Drain-source voltage: 80V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
auf Bestellung 1268 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Mounting: SMD On-state resistance: 16mΩ Drain current: 42A Gate-source voltage: ±20V Power dissipation: 60W Drain-source voltage: 100V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Mounting: SMD On-state resistance: 19mΩ Drain current: 50A Gate-source voltage: ±20V Power dissipation: 125W Drain-source voltage: 150V Kind of channel: enhancement Technology: OptiMOS™ 3 Polarisation: unipolar Type of transistor: N-MOSFET Case: PG-TSDSON-8 |
auf Bestellung 1741 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SC79 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
auf Bestellung 2284 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Kind of package: reel; tape Case: SOT323 Mounting: SMD Type of diode: switching Load current: 0.1A Power dissipation: 0.25W Max. forward voltage: 1.1V Max. off-state voltage: 150V |
auf Bestellung 4115 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF250P225 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 49A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Kind of channel: enhancement Gate charge: 96nC Kind of package: tube Technology: StrongIRFET™ |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 347 Stücke: Lieferzeit 14-21 Tag (e) |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFI1310NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 19A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRFI4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 34A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 9.3mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1020 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI530NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 29.3nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 1744 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: THT Gate charge: 62.7nC Kind of package: tube Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 575 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB033N10N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Case: PG-TO263-3 Mounting: SMD Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar On-state resistance: 3.3mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BAR6403WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 1835 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 334+ | 0.21 EUR |
| 618+ | 0.12 EUR |
| 667+ | 0.11 EUR |
| 695+ | 0.1 EUR |
| BAR6404E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
auf Bestellung 1798 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 0.37 EUR |
| 296+ | 0.24 EUR |
| 384+ | 0.19 EUR |
| 573+ | 0.12 EUR |
| 889+ | 0.081 EUR |
| 940+ | 0.076 EUR |
| 1000+ | 0.073 EUR |
| BAR66E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 200mA; 250mW; SOT23; double series
Semiconductor structure: double series
Features of semiconductor devices: PIN
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Type of diode: switching
Load current: 0.2A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. forward impulse current: 12A
Max. off-state voltage: 150V
auf Bestellung 4510 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 239+ | 0.3 EUR |
| 295+ | 0.24 EUR |
| 329+ | 0.22 EUR |
| 385+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 481+ | 0.15 EUR |
| BA592E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOD323; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOD323
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Leakage current: 20nA
Capacitance: 0.6...1.4pF
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 365+ | 0.2 EUR |
| 405+ | 0.18 EUR |
| 460+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| BAR6303WE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SOD323; single diode
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 2619 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 313+ | 0.23 EUR |
| 379+ | 0.19 EUR |
| 428+ | 0.17 EUR |
| 500+ | 0.14 EUR |
| 618+ | 0.12 EUR |
| 820+ | 0.087 EUR |
| 878+ | 0.082 EUR |
| BC817UPNE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 170MHz
Kind of transistor: complementary pair
auf Bestellung 7003 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 240+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 404+ | 0.18 EUR |
| 443+ | 0.16 EUR |
| BAS3007ARPPE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Kind of package: reel; tape
Electrical mounting: SMT
Load current: 0.9A
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Features of semiconductor devices: Schottky
auf Bestellung 4435 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 138+ | 0.52 EUR |
| 147+ | 0.49 EUR |
| 240+ | 0.3 EUR |
| 253+ | 0.28 EUR |
| 3000+ | 0.27 EUR |
| BAS4002ARPPE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 40V; If: 0.2A; Ifsm: 2A; SOT143; SMT
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 0.2A
Max. forward impulse current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Case: SOT143
Features of semiconductor devices: Schottky
auf Bestellung 278 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 0.46 EUR |
| 183+ | 0.39 EUR |
| 195+ | 0.37 EUR |
| 239+ | 0.3 EUR |
| 252+ | 0.28 EUR |
| BB640E6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Case: SOD323
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: RF
Semiconductor structure: single diode
Case: SOD323
Type of diode: varicap
Capacitance: 2.8...76pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
auf Bestellung 2181 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 261+ | 0.27 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| 695+ | 0.1 EUR |
| 736+ | 0.097 EUR |
| SMBTA06UPNE6327HTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 80V; 0.5A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SC74
Mounting: SMD
Frequency: 100MHz
auf Bestellung 860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 239+ | 0.3 EUR |
| 371+ | 0.19 EUR |
| 516+ | 0.14 EUR |
| 544+ | 0.13 EUR |
| IRLML9303TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.25W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 6859 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 298+ | 0.24 EUR |
| 432+ | 0.17 EUR |
| 506+ | 0.14 EUR |
| 758+ | 0.094 EUR |
| 794+ | 0.09 EUR |
| 3000+ | 0.087 EUR |
| IPD70R360P7SAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 7.5A; 59.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 59.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1591 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 81+ | 0.88 EUR |
| 107+ | 0.67 EUR |
| 114+ | 0.63 EUR |
| ICL8001GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
Type of integrated circuit: driver
Number of channels: 1
Category: LED drivers
Description: IC: driver; flyback; PFC controller,SMPS controller,LED driver
Integrated circuit features: phase-cut dimming; soft-start function
Kind of integrated circuit: LED driver; PFC controller; SMPS controller
Topology: flyback
Mounting: SMD
Case: PG-DSO-8
Operating voltage: 10.5...26V DC
Type of integrated circuit: driver
Number of channels: 1
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 51+ | 1.42 EUR |
| 58+ | 1.24 EUR |
| 64+ | 1.13 EUR |
| 67+ | 1.07 EUR |
| 100+ | 1.04 EUR |
| IR1161LTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SOT23-5
Case: SOT23-5
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 590mW
Supply voltage: 4.75...18V DC
Output current: -2.5...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR11688STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 4.75...18V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IR1169STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Category: MOSFET/IGBT drivers
Description: IC: driver; flyback,push-pull,resonant LLC; gate driver; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of integrated circuit: gate driver
Topology: flyback; push-pull; resonant LLC
Voltage class: 200V
Operating temperature: -40...125°C
Power: 625mW
Supply voltage: 11...19V DC
Output current: -4...1A
Type of integrated circuit: driver
Application: SMPS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ICE5QR1070AZXKLA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Operating voltage: 10...25.5V DC
Breakdown voltage: 700V
Frequency: 20kHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 400mA; 20kHz; Ch: 1; DIP7; flyback; 0÷80%
Power: 58/32W
Input voltage: 80...265V
Output current: 0.4A
Case: DIP7
Mounting: THT
Operating temperature: -40...150°C
Topology: flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Operating voltage: 10...25.5V DC
Breakdown voltage: 700V
Frequency: 20kHz
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 70+ | 1.02 EUR |
| BFP740H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 45mA; 0.16W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 45mA
Power dissipation: 0.16W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 44GHz
auf Bestellung 2496 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 198+ | 0.36 EUR |
| 221+ | 0.32 EUR |
| 231+ | 0.31 EUR |
| 249+ | 0.29 EUR |
| 500+ | 0.28 EUR |
| BTS50055-1TMB |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Mounting: THT
Number of channels: 1
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Technology: High Current PROFET
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 55A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 55A
Mounting: THT
Number of channels: 1
Case: PG-TO220-7-11
Supply voltage: 5...34V DC
On-state resistance: 4.4mΩ
Technology: High Current PROFET
Kind of output: N-Channel
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 10.14 EUR |
| 13+ | 5.51 EUR |
| 14+ | 5.21 EUR |
| BTS50080-1TMB |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.5A; Ch: 1; N-Channel; THT
Case: PG-TO220-7-12
Supply voltage: 5.5...38V DC
On-state resistance: 7mΩ
Output current: 9.5A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: THT
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.89 EUR |
| 13+ | 5.66 EUR |
| 14+ | 5.35 EUR |
| BFR182WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 12V; 35mA; 0.25W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Collector-emitter voltage: 12V
Frequency: 8GHz
Kind of transistor: RF
Kind of package: reel; tape
Collector current: 35mA
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 676+ | 0.11 EUR |
| 782+ | 0.092 EUR |
| 863+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| BCP5616H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Mounting: SMD
Frequency: 100MHz
auf Bestellung 560 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 220+ | 0.33 EUR |
| 245+ | 0.29 EUR |
| 320+ | 0.23 EUR |
| 335+ | 0.21 EUR |
| BCX53H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 125MHz
auf Bestellung 509 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 248+ | 0.29 EUR |
| 285+ | 0.25 EUR |
| 364+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| BCX5610H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
auf Bestellung 1745 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 220+ | 0.33 EUR |
| 250+ | 0.29 EUR |
| 325+ | 0.22 EUR |
| 345+ | 0.21 EUR |
| BCX56H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 2W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Mounting: SMD
Frequency: 100MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF5802TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 0.9A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 0.9A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 1771 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 167+ | 0.43 EUR |
| 195+ | 0.37 EUR |
| 319+ | 0.22 EUR |
| 338+ | 0.21 EUR |
| IRLMS2002TRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; 2W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSL207SPH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 2W; PG-TSOP-6
Case: PG-TSOP-6
Mounting: SMD
Gate-source voltage: ±12V
Kind of channel: enhancement
Technology: OptiMOS™ P
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -6A
Drain-source voltage: -20V
On-state resistance: 41mΩ
Power dissipation: 2W
auf Bestellung 2852 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 119+ | 0.6 EUR |
| 218+ | 0.33 EUR |
| 230+ | 0.31 EUR |
| 1000+ | 0.3 EUR |
| IR2132JPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 475ns
Turn-on time: 675ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 600V
Type of integrated circuit: driver
Kind of package: tube
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 6.74 EUR |
| 12+ | 6.09 EUR |
| 13+ | 5.76 EUR |
| 27+ | 5.69 EUR |
| IR2135JPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 0.6/1.2kV
Type of integrated circuit: driver
Kind of package: tube
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 15.22 EUR |
| 7+ | 10.72 EUR |
| IR2233JPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Case: PLCC44
Mounting: SMD
Operating temperature: -40...125°C
Output current: -420...200mA
Turn-off time: 700ns
Turn-on time: 750ns
Number of channels: 6
Power: 2W
Supply voltage: 10...20V DC
Voltage class: 1.2kV
Type of integrated circuit: driver
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 11.28 EUR |
| 8+ | 9.62 EUR |
| IRFL4310TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFB7434PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 317A; 294W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 317A
Power dissipation: 294W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 216nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Trade name: StrongIRFET
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.4 EUR |
| 25+ | 2.97 EUR |
| 38+ | 1.89 EUR |
| IR2181SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: undervoltage UVP
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -2.3...1.9A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Protection: undervoltage UVP
Voltage class: 600V
Turn-off time: 0.22µs
Turn-on time: 180ns
Power: 625mW
Integrated circuit features: charge pump; integrated bootstrap functionality
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| SPW20N60S5 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 8.74 EUR |
| 12+ | 6.02 EUR |
| 13+ | 5.69 EUR |
| IRLZ34NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Gate charge: 16.7nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; 56W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Power dissipation: 56W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: logic level
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Gate charge: 16.7nC
Kind of package: tube
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 65+ | 1.1 EUR |
| 75+ | 0.96 EUR |
| 154+ | 0.46 EUR |
| IRLZ34NSTRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 21A; Idm: 110A; 68W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 21A
Power dissipation: 68W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 35mΩ
Gate-source voltage: ±16V
Pulsed drain current: 110A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFP3006PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.65 EUR |
| IRFP3415PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 43A; 200W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 43A
Power dissipation: 200W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 133.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.2 EUR |
| IRFP3703PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 210A; 230W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 210A
Power dissipation: 230W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 209nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 71.5 EUR |
| BSP129H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.05A; 1.8W; SOT223
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 240V
Drain current: 50mA
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: SMD
Kind of channel: depletion
auf Bestellung 1543 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 116+ | 0.62 EUR |
| 147+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| 200+ | 0.44 EUR |
| IRS2304SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 185ns
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.86 EUR |
| 35+ | 2.1 EUR |
| 45+ | 1.62 EUR |
| 46+ | 1.56 EUR |
| BB85702VH7902XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: varicap
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Features of semiconductor devices: RF
Case: SC79
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Semiconductor structure: single diode
Mounting: SMD
Type of diode: varicap
Capacitance: 0.45...7.2pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Features of semiconductor devices: RF
Case: SC79
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 172+ | 0.42 EUR |
| 186+ | 0.38 EUR |
| 360+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| BAR6302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.2V
Max. off-state voltage: 50V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 218+ | 0.33 EUR |
| 271+ | 0.26 EUR |
| 339+ | 0.21 EUR |
| 543+ | 0.13 EUR |
| 1011+ | 0.071 EUR |
| 1069+ | 0.067 EUR |
| BSC123N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
On-state resistance: 12.3mΩ
Drain current: 55A
Gate-source voltage: ±20V
Power dissipation: 66W
Drain-source voltage: 80V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
auf Bestellung 1268 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.69 EUR |
| 56+ | 1.29 EUR |
| 86+ | 0.83 EUR |
| 91+ | 0.79 EUR |
| 500+ | 0.76 EUR |
| BSC160N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Mounting: SMD
On-state resistance: 16mΩ
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 60W
Drain-source voltage: 100V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSC190N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
On-state resistance: 19mΩ
Drain current: 50A
Gate-source voltage: ±20V
Power dissipation: 125W
Drain-source voltage: 150V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
auf Bestellung 1741 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 1.99 EUR |
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SC79
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
auf Bestellung 2284 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 275+ | 0.26 EUR |
| 455+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 635+ | 0.11 EUR |
| BAR6405WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Type of diode: switching
Load current: 0.1A
Power dissipation: 0.25W
Max. forward voltage: 1.1V
Max. off-state voltage: 150V
auf Bestellung 4115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 250+ | 0.29 EUR |
| 291+ | 0.25 EUR |
| 315+ | 0.23 EUR |
| 353+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| 521+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| IRF250P225 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 96nC
Kind of package: tube
Technology: StrongIRFET™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 96nC
Kind of package: tube
Technology: StrongIRFET™
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.74 EUR |
| 12+ | 6.12 EUR |
| 13+ | 5.78 EUR |
| IRFZ46NLPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| IRFZ46NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 101+ | 0.71 EUR |
| 146+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| BSB165N15NZ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI1310NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 2.42 EUR |
| 36+ | 2.03 EUR |
| 41+ | 1.76 EUR |
| 46+ | 1.57 EUR |
| 47+ | 1.53 EUR |
| IRFI4229PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 19A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFI4321PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 33+ | 2.22 EUR |
| IRFI4410ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.59 EUR |
| 32+ | 2.27 EUR |
| 33+ | 2.2 EUR |
| 34+ | 2.16 EUR |
| 50+ | 2.07 EUR |
| IRFI530NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1744 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 65+ | 1.11 EUR |
| 83+ | 0.87 EUR |
| 88+ | 0.82 EUR |
| 1000+ | 0.79 EUR |
| IRFI540NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: THT
Gate charge: 62.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 38+ | 1.89 EUR |
| 48+ | 1.5 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.9 EUR |
| IPB033N10N5LF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Kind of channel: enhancement
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