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IRF4905LPBF IRF4905LPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B04F1A6F5005056AB5A8F&compId=irf4905spbf.pdf?ci_sign=9a6c480e353ea839f17bfdaedc69d66476e5a1db description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
36+2 EUR
42+1.73 EUR
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 36
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IRF4905PBF IRF4905PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7B0BF1A6F5005056AB5A8F&compId=irf4905.pdf?ci_sign=aa97229e0217852a76ac6df2ebf6f3210501e211 Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
auf Bestellung 7644 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.23 EUR
35+2.07 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 33
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IRF4905STRLPBF IRF4905STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6D8EB4ED95EA&compId=IRF4905STRLPBF.pdf?ci_sign=4664d9a3eb8030f7aaecb27cb22427bfba328288 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 4682 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
28+2.59 EUR
45+1.6 EUR
48+1.5 EUR
800+1.44 EUR
Mindestbestellmenge: 19
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IRF4905STRRPBF INFINEON TECHNOLOGIES irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRF4905S AUIRF4905S INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E897E706B82C143&compId=auirf4905s.pdf?ci_sign=b0e4517baaab923e6fdcc43192bce8335138272b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
Produkt ist nicht verfügbar
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IGW25N120H3FKSA1 IGW25N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF65219119111BF&compId=IGW25N120H3-DTE.pdf?ci_sign=9258e69204c2cff897bd1a4684199a4b9a1e5ab7 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
17+4.39 EUR
18+4.15 EUR
30+3.99 EUR
Mindestbestellmenge: 12
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IHW25N120E1XKSA1 IHW25N120E1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 147nC
Turn-off time: 2004ns
Collector current: 25A
Gate-emitter voltage: ±20V
Power dissipation: 92.4W
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.76 EUR
27+2.67 EUR
29+2.53 EUR
60+2.47 EUR
120+2.43 EUR
Mindestbestellmenge: 16
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IKW25N120T2FKSA1 IKW25N120T2FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B445A567FCC469&compId=IKW25N120T2.pdf?ci_sign=f5d440dc422e32eecd5cb390c0ed98526ec247c5 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 349W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.18 EUR
15+5.02 EUR
16+4.73 EUR
Mindestbestellmenge: 10
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IRF9530NPBF IRF9530NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E531D85A9F1A6F5005056AB5A8F&compId=irf9530n.pdf?ci_sign=2c38ddd36f45d6a026a2c2caf41a7917df1e373c Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Mounting: THT
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -14A
Gate charge: 38.7nC
On-state resistance: 0.2Ω
Power dissipation: 79W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1136 Stücke:
Lieferzeit 14-21 Tag (e)
77+0.93 EUR
89+0.8 EUR
96+0.75 EUR
127+0.57 EUR
134+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 77
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IKW40N60H3FKSA1 IKW40N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF287E64D629820&compId=IKW40N60H3.pdf?ci_sign=7eaa1a7e97c5e16ffdf06cda79c87b11811d0c7c Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.66 EUR
17+4.22 EUR
30+4.1 EUR
Mindestbestellmenge: 13
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BSS138NH6327XTSA2 BSS138NH6327XTSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7B9DF2438310B&compId=BSS138NH6327XTSA2.pdf?ci_sign=a42913079dacaab5a72dc2c46a1681e16ed9290d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 16091 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
407+0.18 EUR
583+0.12 EUR
684+0.1 EUR
1539+0.046 EUR
1629+0.044 EUR
Mindestbestellmenge: 295
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BSS138NH6433XTMA1 BSS138NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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BSC032N04LSATMA1 BSC032N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A633B5E8211C&compId=BSC032N04LS-DTE.pdf?ci_sign=35844659b186770f8aee1366db4c3cb3c76cf2ed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1164 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
55+1.32 EUR
73+0.99 EUR
76+0.94 EUR
77+0.93 EUR
80+0.9 EUR
Mindestbestellmenge: 46
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BSC034N06NSATMA1 BSC034N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2BC83A04D211C&compId=BSC034N06NS-DTE.pdf?ci_sign=deea794976e163886639f6f5a7407e4daef5c7e1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IGW40N60H3FKSA1 IGW40N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF477EE7390B1CC&compId=IGW40N60H3-DTE.pdf?ci_sign=336b04d4c8823ae5f751d2a7838f04774799fd92 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.28 EUR
19+3.78 EUR
20+3.58 EUR
30+3.43 EUR
Mindestbestellmenge: 17
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IHW40N60RFKSA1 IHW40N60RFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94 Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW40N60DH3EXKSA1 IKFW40N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 IGP15N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31AA1D1190FA8&compId=IGP15N60T-DTE.pdf?ci_sign=b502c581e8e6900b8d531fa069e2da1bfc4e2779 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
54+1.34 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 30
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IRL540NSTRLPBF IRL540NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22275F284EE03F1A303005056AB0C4F&compId=irl540nspbf.pdf?ci_sign=b0faffc4f671cf875c1a91bbe77a35e72b967102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.02 EUR
76+0.94 EUR
80+0.9 EUR
Mindestbestellmenge: 36
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IRFB3206GPBF IRFB3206GPBF INFINEON TECHNOLOGIES irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.93 EUR
28+2.63 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 19
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IRFB3206PBF IRFB3206PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6BFF1A6F5005056AB5A8F&compId=irfs3206pbf.pdf?ci_sign=1b9ab7ab5a0e7f7a29be1ba6c0d0457a333e87b2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1237 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.9 EUR
43+1.7 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 38
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IRLMS6802TRPBF IRLMS6802TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227D6FF78EF1F1A303005056AB0C4F&compId=irlms6802pbf.pdf?ci_sign=b1d046298cbd8012bab5b087e26b2481180c634e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB8743PBF IRLB8743PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582593F1A6F5005056AB5A8F&compId=irlb8743pbf.pdf?ci_sign=9b6b0d7ca245064fadba2c5da0c0447974a20e86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
110+0.65 EUR
123+0.58 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 103
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IKW15N120H3FKSA1 IKW15N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
14+5.11 EUR
Mindestbestellmenge: 12
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IRLML6401TRPBF IRLML6401TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582611F1A6F5005056AB5A8F&compId=irlml6401.pdf?ci_sign=8bedbc854eb7229a844e3beb3076098fb21ec847 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5865 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
211+0.34 EUR
305+0.24 EUR
369+0.19 EUR
875+0.082 EUR
925+0.077 EUR
Mindestbestellmenge: 173
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BC847CE6327HTSA1 BC847CE6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.52 EUR
Mindestbestellmenge: 47
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IRFB3607PBF IRFB3607PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6F0F1A6F5005056AB5A8F&compId=irfs3607pbf.pdf?ci_sign=98d0685c947b09aa259e1947e7ed20d67c6bfc89 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Gate charge: 56nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Polarisation: unipolar
Produkt ist nicht verfügbar
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BC857CE6327 BC857CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5DB91A48C6469&compId=BC857SH6327.pdf?ci_sign=9ded2294cfab738e617f38d70595187449824bf3 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
486+0.15 EUR
750+0.095 EUR
795+0.09 EUR
Mindestbestellmenge: 358
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BC847BE6433HTMA1 BC847BE6433HTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
622+0.11 EUR
758+0.094 EUR
1470+0.049 EUR
Mindestbestellmenge: 622
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BAT5406WH6327XTSA1 BAT5406WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
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IKD03N60RFATMA1 IKD03N60RFATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4 Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 17ns
Turn-off time: 265ns
Produkt ist nicht verfügbar
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SPU03N60C3BKMA1 SPU03N60C3BKMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998BB1C7255147820&compId=SP_03N60C3.pdf?ci_sign=b87a58535ff6673a5514a471e700d088e6931a7b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2101PBF IR2101PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F559F216DB0F1A303005056AB0C4F&compId=ir2101.pdf?ci_sign=7868ce006c430385a00b1b6ef276ca5826838e52 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 1W
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.78 EUR
23+3.23 EUR
32+2.26 EUR
34+2.14 EUR
Mindestbestellmenge: 19
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IR2101STRPBF IR2101STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD859AC4CE1F5EA&compId=IR2101SPBF.pdf?ci_sign=cf114e828503fc9421e769ef0cc9eb118ca9e5cf description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
63+1.14 EUR
75+0.96 EUR
79+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 46
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IRF7401TRPBF IRF7401TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A19C0486F2F1A303005056AB0C4F&compId=irf7401pbf.pdf?ci_sign=b61442b4f91f387c9ca967f7e1a87d0aceca607f description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF7404TRPBF IRF7404TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A200E3CFFFF1A303005056AB0C4F&compId=irf7404pbf.pdf?ci_sign=a279e693a9c55e7394993c885ef6397ad3e74a7e description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IR21531PBF IR21531PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD346DF1A6F5005056AB5A8F&compId=ir21531.pdf?ci_sign=fbfd3f2c3acd812dd314bfbf7c9d05a0c977128f description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.65 EUR
31+2.37 EUR
32+2.27 EUR
35+2.1 EUR
50+2.06 EUR
Mindestbestellmenge: 28
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IR2153PBF IR2153PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Produkt ist nicht verfügbar
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IR2153SPBF IR2153SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.97 EUR
42+1.72 EUR
46+1.56 EUR
50+1.43 EUR
Mindestbestellmenge: 37
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IR2153STRPBF IR2153STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
Produkt ist nicht verfügbar
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BTS740S2 BTS740S2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae description Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.31 EUR
13+5.51 EUR
Mindestbestellmenge: 7
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IRLL014NTRPBF IRLL014NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
148+0.48 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 93
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IRLL024NTRPBF IRLL024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499 description Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
135+0.53 EUR
150+0.48 EUR
173+0.41 EUR
194+0.37 EUR
277+0.26 EUR
293+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 109
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BC850BE6327 BC850BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8534 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
468+0.15 EUR
711+0.1 EUR
837+0.086 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 334
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BC850CE6327 BC850CE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
348+0.2 EUR
Mindestbestellmenge: 348
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IRFR9024NTRLPBF IRFR9024NTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
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IRFR9024NTRPBF IRFR9024NTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
76+0.95 EUR
87+0.83 EUR
201+0.36 EUR
212+0.34 EUR
Mindestbestellmenge: 60
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AUIRFR9024NTRL INFINEON TECHNOLOGIES INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Produkt ist nicht verfügbar
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IRL3705NPBF IRL3705NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7DA3F1A6F5005056AB5A8F&compId=irl3705n.pdf?ci_sign=6cab1fdf2340cfadae101f342b21237f36d915c9 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2683 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.96 EUR
40+1.82 EUR
90+0.8 EUR
95+0.76 EUR
Mindestbestellmenge: 37
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IRL3705NSTRLPBF IRL3705NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRL3705ZSTRLPBF IRL3705ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB3034PBF IRLB3034PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3036PBF IRLB3036PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
21+3.5 EUR
23+3.25 EUR
50+3.19 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF IRLB3813PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
48+1.52 EUR
54+1.33 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4030PBF IRLB4030PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.96 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4132PBF IRLB4132PBF INFINEON TECHNOLOGIES IRLB4132PbF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
91+0.79 EUR
152+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8314PBF IRLB8314PBF INFINEON TECHNOLOGIES irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.59 EUR
84+0.86 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8748PBF IRLB8748PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
64+1.12 EUR
74+0.98 EUR
88+0.82 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRF7303TRPBF IRF7303TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7306TRPBF IRF7306TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3280 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
83+0.87 EUR
167+0.43 EUR
177+0.4 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905LPBF description pVersion=0046&contRep=ZT&docId=E1C04E40FB7B04F1A6F5005056AB5A8F&compId=irf4905spbf.pdf?ci_sign=9a6c480e353ea839f17bfdaedc69d66476e5a1db
IRF4905LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO262
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
auf Bestellung 97 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2 EUR
42+1.73 EUR
46+1.59 EUR
48+1.52 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7B0BF1A6F5005056AB5A8F&compId=irf4905.pdf?ci_sign=aa97229e0217852a76ac6df2ebf6f3210501e211
IRF4905PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; TO220AB
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
auf Bestellung 7644 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.23 EUR
35+2.07 EUR
71+1.02 EUR
75+0.96 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRLPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC6D8EB4ED95EA&compId=IRF4905STRLPBF.pdf?ci_sign=4664d9a3eb8030f7aaecb27cb22427bfba328288
IRF4905STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 4682 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
28+2.59 EUR
45+1.6 EUR
48+1.5 EUR
800+1.44 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRF4905STRRPBF irf4905spbf.pdf?fileId=5546d462533600a4015355e331c41980
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; Idm: -280A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Pulsed drain current: -280A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF4905S pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E897E706B82C143&compId=auirf4905s.pdf?ci_sign=b0e4517baaab923e6fdcc43192bce8335138272b
AUIRF4905S
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -44A; 170W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -44A
Power dissipation: 170W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 0.12µC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW25N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ACF65219119111BF&compId=IGW25N120H3-DTE.pdf?ci_sign=9258e69204c2cff897bd1a4684199a4b9a1e5ab7
IGW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
17+4.39 EUR
18+4.15 EUR
30+3.99 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IHW25N120E1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDC709B02919820&compId=IHW25N120E1.pdf?ci_sign=044805b42bcb3062c7f87ce990fa46fd76a11e9d
IHW25N120E1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 147nC
Turn-off time: 2004ns
Collector current: 25A
Gate-emitter voltage: ±20V
Power dissipation: 92.4W
Pulsed collector current: 75A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ RC
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.76 EUR
27+2.67 EUR
29+2.53 EUR
60+2.47 EUR
120+2.43 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120T2FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586B445A567FCC469&compId=IKW25N120T2.pdf?ci_sign=f5d440dc422e32eecd5cb390c0ed98526ec247c5
IKW25N120T2FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 349W; TO247-3
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.12µC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 349W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.18 EUR
15+5.02 EUR
16+4.73 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRF9530NPBF pVersion=0046&contRep=ZT&docId=E1C04E531D85A9F1A6F5005056AB5A8F&compId=irf9530n.pdf?ci_sign=2c38ddd36f45d6a026a2c2caf41a7917df1e373c
IRF9530NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -14A; 79W; TO220AB
Kind of package: tube
Mounting: THT
Case: TO220AB
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -14A
Gate charge: 38.7nC
On-state resistance: 0.2Ω
Power dissipation: 79W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
89+0.8 EUR
96+0.75 EUR
127+0.57 EUR
134+0.53 EUR
1000+0.52 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
IKW40N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF287E64D629820&compId=IKW40N60H3.pdf?ci_sign=7eaa1a7e97c5e16ffdf06cda79c87b11811d0c7c
IKW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 153W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 153W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 218ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 160A
Collector-emitter voltage: 600V
auf Bestellung 184 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.66 EUR
17+4.22 EUR
30+4.1 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BSS138NH6327XTSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A7B9DF2438310B&compId=BSS138NH6327XTSA2.pdf?ci_sign=a42913079dacaab5a72dc2c46a1681e16ed9290d
BSS138NH6327XTSA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.36W; SOT23
Kind of channel: enhancement
Technology: SIPMOS™
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.23A
Power dissipation: 0.36W
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
auf Bestellung 16091 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
407+0.18 EUR
583+0.12 EUR
684+0.1 EUR
1539+0.046 EUR
1629+0.044 EUR
Mindestbestellmenge: 295
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BSS138NH6433XTMA1 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SIPMOS®; unipolar; 60V; 180mA; Idm: 0.92A
Kind of channel: enhancement
Technology: SIPMOS®
Polarisation: unipolar
Type of transistor: N-MOSFET
Case: SOT23
Mounting: SMD
Drain current: 0.18A
Power dissipation: 0.36W
Pulsed drain current: 0.92A
On-state resistance: 3.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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BSC032N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A633B5E8211C&compId=BSC032N04LS-DTE.pdf?ci_sign=35844659b186770f8aee1366db4c3cb3c76cf2ed
BSC032N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 83A; 52W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 83A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1164 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
55+1.32 EUR
73+0.99 EUR
76+0.94 EUR
77+0.93 EUR
80+0.9 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
BSC034N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2BC83A04D211C&compId=BSC034N06NS-DTE.pdf?ci_sign=deea794976e163886639f6f5a7407e4daef5c7e1
BSC034N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW40N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF477EE7390B1CC&compId=IGW40N60H3-DTE.pdf?ci_sign=336b04d4c8823ae5f751d2a7838f04774799fd92
IGW40N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 306W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 306W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 216 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.28 EUR
19+3.78 EUR
20+3.58 EUR
30+3.43 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IHW40N60RFKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDCBDE92FDCF820&compId=IHW40N60RF.pdf?ci_sign=82767ed05928b8e96282a1f045c5bab220a23d94
IHW40N60RFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 40A; 152W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 152W
Case: TO247-3
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Turn-off time: 217ns
Collector current: 40A
Gate-emitter voltage: ±20V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Pulsed collector current: 120A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW40N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9AAD001B273D1&compId=IKFW40N60DH3E.pdf?ci_sign=d3d3fa4018878730715399a693c9252b7a658397
IKFW40N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 28A; 81W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 81W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 52ns
Turn-off time: 160ns
Collector current: 28A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 90A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP15N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31AA1D1190FA8&compId=IGP15N60T-DTE.pdf?ci_sign=b502c581e8e6900b8d531fa069e2da1bfc4e2779
IGP15N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 23A; 130W; TO220-3
Type of transistor: IGBT
Power dissipation: 130W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 23A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.45 EUR
54+1.34 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 30
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IRL540NSTRLPBF pVersion=0046&contRep=ZT&docId=E22275F284EE03F1A303005056AB0C4F&compId=irl540nspbf.pdf?ci_sign=b0faffc4f671cf875c1a91bbe77a35e72b967102
IRL540NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 3.8W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 3.8W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.02 EUR
76+0.94 EUR
80+0.9 EUR
Mindestbestellmenge: 36
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IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.93 EUR
28+2.63 EUR
49+1.49 EUR
51+1.42 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3206PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6BFF1A6F5005056AB5A8F&compId=irfs3206pbf.pdf?ci_sign=1b9ab7ab5a0e7f7a29be1ba6c0d0457a333e87b2
IRFB3206PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 1237 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.9 EUR
43+1.7 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRLMS6802TRPBF pVersion=0046&contRep=ZT&docId=E2227D6FF78EF1F1A303005056AB0C4F&compId=irlms6802pbf.pdf?ci_sign=b1d046298cbd8012bab5b087e26b2481180c634e
IRLMS6802TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.6A; 2W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.6A
Power dissipation: 2W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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IRLB8743PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582593F1A6F5005056AB5A8F&compId=irlb8743pbf.pdf?ci_sign=9b6b0d7ca245064fadba2c5da0c0447974a20e86
IRLB8743PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 150A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 150A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
110+0.65 EUR
123+0.58 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
IKW15N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4ADAB9D8E51CC&compId=IKW15N120H3-DTE.pdf?ci_sign=5e67717d8537695a7facaef0bb16de80cf14fc4a
IKW15N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 30A; 217W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247-3
Technology: TRENCHSTOP™ 3
Kind of package: tube
Gate charge: 75nC
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 217W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
14+5.11 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRLML6401TRPBF pVersion=0046&contRep=ZT&docId=E1C04E8F582611F1A6F5005056AB5A8F&compId=irlml6401.pdf?ci_sign=8bedbc854eb7229a844e3beb3076098fb21ec847
IRLML6401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -4.3A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 50mΩ
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
173+0.41 EUR
211+0.34 EUR
305+0.24 EUR
369+0.19 EUR
875+0.082 EUR
925+0.077 EUR
Mindestbestellmenge: 173
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BC847CE6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847CE6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.52 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
IRFB3607PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6F0F1A6F5005056AB5A8F&compId=irfs3607pbf.pdf?ci_sign=98d0685c947b09aa259e1947e7ed20d67c6bfc89
IRFB3607PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; TO220AB
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Gate charge: 56nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC857CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5DB91A48C6469&compId=BC857SH6327.pdf?ci_sign=9ded2294cfab738e617f38d70595187449824bf3
BC857CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 795 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
486+0.15 EUR
750+0.095 EUR
795+0.09 EUR
Mindestbestellmenge: 358
Im Einkaufswagen  Stück im Wert von  UAH
BC847BE6433HTMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BEA7413E6EFAA143&compId=bc847_8_9_bc850.pdf?ci_sign=b0fb0482c1eec59c20a1d7a11dd6cbe46edf41df
BC847BE6433HTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1470 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
622+0.11 EUR
758+0.094 EUR
1470+0.049 EUR
Mindestbestellmenge: 622
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BAT5406WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5406WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT323; SMD; 30V; 0.2A; 230mW
Power dissipation: 0.23W
Case: SOT323
Mounting: SMD
Load current: 0.2A
Max. forward impulse current: 0.6A
Max. off-state voltage: 30V
Semiconductor structure: common anode; double
Type of diode: Schottky rectifying
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IKD03N60RFATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD8E80508A9820&compId=IKD03N60RF.pdf?ci_sign=68d6aad35e656a07d48ac99a74b3916ffc4e27e4
IKD03N60RFATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 53.6W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 53.6W
Case: DPAK
Mounting: SMD
Gate charge: 17.1nC
Kind of package: reel; tape
Collector current: 6A
Pulsed collector current: 7.5A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 17ns
Turn-off time: 265ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPU03N60C3BKMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998BB1C7255147820&compId=SP_03N60C3.pdf?ci_sign=b87a58535ff6673a5514a471e700d088e6931a7b
SPU03N60C3BKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; TO251
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 2nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2101PBF description pVersion=0046&contRep=ZT&docId=E21F559F216DB0F1A303005056AB0C4F&compId=ir2101.pdf?ci_sign=7868ce006c430385a00b1b6ef276ca5826838e52
IR2101PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 1W
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.78 EUR
23+3.23 EUR
32+2.26 EUR
34+2.14 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
IR2101STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD859AC4CE1F5EA&compId=IR2101SPBF.pdf?ci_sign=cf114e828503fc9421e769ef0cc9eb118ca9e5cf
IR2101STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-off time: 150ns
Turn-on time: 160ns
Power: 625mW
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
63+1.14 EUR
75+0.96 EUR
79+0.92 EUR
250+0.87 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRF7401TRPBF description pVersion=0046&contRep=ZT&docId=E221A19C0486F2F1A303005056AB0C4F&compId=irf7401pbf.pdf?ci_sign=b61442b4f91f387c9ca967f7e1a87d0aceca607f
IRF7401TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8.7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7404TRPBF description pVersion=0046&contRep=ZT&docId=E221A200E3CFFFF1A303005056AB0C4F&compId=irf7404pbf.pdf?ci_sign=a279e693a9c55e7394993c885ef6397ad3e74a7e
IRF7404TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6.7A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR21531PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD346DF1A6F5005056AB5A8F&compId=ir21531.pdf?ci_sign=fbfd3f2c3acd812dd314bfbf7c9d05a0c977128f
IR21531PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Turn-off time: 40ns
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Kind of package: tube
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Voltage class: 600V
Mounting: THT
Operating temperature: -40...125°C
Case: DIP8
Supply voltage: 10...15.6V DC
Turn-on time: 80ns
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.65 EUR
31+2.37 EUR
32+2.27 EUR
35+2.1 EUR
50+2.06 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
IR2153PBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Power: 1W
Mounting: THT
Operating temperature: -40...125°C
Turn-off time: 40ns
Turn-on time: 80ns
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Voltage class: 600V
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Topology: MOSFET half-bridge
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR2153SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD3474F1A6F5005056AB5A8F&compId=ir2153.pdf?ci_sign=4af5f815948fd1ff289fb81e6867b860118ddf46
IR2153SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
42+1.72 EUR
46+1.56 EUR
50+1.43 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IR2153STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD8A926E51A75EA&compId=IR2153DPBF.pdf?ci_sign=467d7c213ad01b739971cced2176d04c6b7f1be5
IR2153STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Power: 625mW
Number of channels: 2
Supply voltage: 10...15.6V DC
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 80ns
Turn-off time: 40ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS740S2 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD64020DBFAD5EA&compId=BTS740S2.pdf?ci_sign=b9ff1acd5dab2c97ff91b1b5b6eaa731690ef1ae
BTS740S2
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 5.5÷8.5A; Ch: 2; N-Channel; SMD; SO20-W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 5.5...8.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO20-W
On-state resistance: 15mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.31 EUR
13+5.51 EUR
Mindestbestellmenge: 7
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IRLL014NTRPBF description pVersion=0046&contRep=ZT&docId=E2227AD7F1FDCDF1A303005056AB0C4F&compId=irll014npbf.pdf?ci_sign=1d1f9f334532dd3711cbf8c73e9f89d36ccd8d49
IRLL014NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 2A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
148+0.48 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 93
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IRLL024NTRPBF description pVersion=0046&contRep=ZT&docId=E1C04E8F5825B6F1A6F5005056AB5A8F&compId=irll024n.pdf?ci_sign=a7f9a48b2cd1b39663d6bdd21504bf6984076499
IRLL024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 4.4A; 2.1W; SOT223
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 4.4A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±16V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
135+0.53 EUR
150+0.48 EUR
173+0.41 EUR
194+0.37 EUR
277+0.26 EUR
293+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 109
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BC850BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 8534 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
711+0.1 EUR
837+0.086 EUR
1214+0.059 EUR
1283+0.056 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
BC850CE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C7D15BD868A469&compId=BC850BE6327.pdf?ci_sign=f121701fbde503d1262ff6ba20651ddab8c7b832
BC850CE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
348+0.2 EUR
Mindestbestellmenge: 348
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IRFR9024NTRLPBF pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR9024NTRPBF description pVersion=0046&contRep=ZT&docId=E221C5734E15E6F1A303005056AB0C4F&compId=irfr9024npbf.pdf?ci_sign=f830b8b3a8fac721b0bcde7213ec6a984f1207a9
IRFR9024NTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -11A; 38W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -11A
Power dissipation: 38W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 2159 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
76+0.95 EUR
87+0.83 EUR
201+0.36 EUR
212+0.34 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR9024NTRL INFN-S-A0002298863-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -8A; Idm: -44A; 38W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -8A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 19nC
Kind of channel: enhancement
Pulsed drain current: -44A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705NPBF description pVersion=0046&contRep=ZT&docId=E1C04E895D7DA3F1A6F5005056AB5A8F&compId=irl3705n.pdf?ci_sign=6cab1fdf2340cfadae101f342b21237f36d915c9
IRL3705NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 65.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 2683 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.96 EUR
40+1.82 EUR
90+0.8 EUR
95+0.76 EUR
Mindestbestellmenge: 37
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IRL3705NSTRLPBF pVersion=0046&contRep=ZT&docId=E22274DD1ABBBBF1A303005056AB0C4F&compId=irl3705nspbf.pdf?ci_sign=def286927a4ec6a16efcd8a4c3fbd0ce993a0cee
IRL3705NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 89A; 170W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 89A
Power dissipation: 170W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRL3705ZSTRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF112ECD9F715EA&compId=IRL3705ZSTRLPBF.pdf?ci_sign=c916a4aa1628d516334b00db556866bd3c12c24c
IRL3705ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 86A; 130W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 86A
Power dissipation: 130W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3034PBF pVersion=0046&contRep=ZT&docId=E1C04E895D7E3DF1A6F5005056AB5A8F&compId=irlb3034pbf.pdf?ci_sign=7508af5c90c4bc752a92b5bab13419c960913739
IRLB3034PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3036PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582577F1A6F5005056AB5A8F&compId=irlb3036pbf.pdf?ci_sign=fb0a0d81cd0373dfbb1fe542694c88309414bd06
IRLB3036PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 91nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
21+3.5 EUR
23+3.25 EUR
50+3.19 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRLB3813PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58257EF1A6F5005056AB5A8F&compId=irlb3813pbf.pdf?ci_sign=b8af6369f50e2b78444ab244deef2c85b9ccbb1a
IRLB3813PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 260A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 260A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.95mΩ
Mounting: THT
Gate charge: 57nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 757 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
48+1.52 EUR
54+1.33 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4030PBF pVersion=0046&contRep=ZT&docId=E1C04E8F582585F1A6F5005056AB5A8F&compId=irlb4030pbf.pdf?ci_sign=9c1dd0d165f7be0768858b97ea06809eb52e6a97
IRLB4030PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 4.3mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.96 EUR
37+1.94 EUR
39+1.84 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRLB4132PBF IRLB4132PbF.pdf
IRLB4132PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 620A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 620A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 794 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
91+0.79 EUR
152+0.47 EUR
160+0.45 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8314PBF irlb8314pbf.pdf?fileId=5546d462533600a4015356604d6f258f
IRLB8314PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 664A; 125W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 664A
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.59 EUR
84+0.86 EUR
130+0.55 EUR
138+0.52 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRLB8748PBF pVersion=0046&contRep=ZT&docId=E1C04E8F58259AF1A6F5005056AB5A8F&compId=irlb8748pbf.pdf?ci_sign=2d8572277f7342dea88e1d211ba84d481801601d
IRLB8748PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 92A; 75W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 92A
Power dissipation: 75W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
64+1.12 EUR
74+0.98 EUR
88+0.82 EUR
140+0.51 EUR
148+0.48 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IRF7303TRPBF pVersion=0046&contRep=ZT&docId=E21F74C2DCE370F1A303005056AB0C4F&compId=irf7303pbf.pdf?ci_sign=a9fcab7b64f09e84c0ca4b84501bec51c69c4040
IRF7303TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4.9A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7306TRPBF description pVersion=0046&contRep=ZT&docId=E21F751DDD019EF1A303005056AB0C4F&compId=irf7306pbf.pdf?ci_sign=244ded6274750851bd5e8e76cc1513b6407fc75b
IRF7306TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 2W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
83+0.87 EUR
167+0.43 EUR
177+0.4 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
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