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IPW60R060P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
30+4.92 EUR
120+4.43 EUR
Mindestbestellmenge: 30
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IPP120N20NFDAKSA1 IPP120N20NFDAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.55 EUR
15+4.93 EUR
16+4.66 EUR
Mindestbestellmenge: 10
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BCX71HE6327 BCX71HE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363 Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6500 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
2275+0.031 EUR
2405+0.03 EUR
Mindestbestellmenge: 600
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IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 69A
On-state resistance: 4mΩ
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPP040N06NAKSA1 IPP040N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 4mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 4mΩ
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 288A
Mounting: THT
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 6.4mΩ
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 252A
Mounting: SMD
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 6mΩ
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.5nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 241A
Mounting: SMD
Produkt ist nicht verfügbar
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IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 12.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.3nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Mounting: SMD
Produkt ist nicht verfügbar
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IPD640N06LGBTMA1 INFINEON TECHNOLOGIES IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Case: PG-TO252-3
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 64mΩ
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Produkt ist nicht verfügbar
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IRF7413ZTRPBFXTMA1 INFINEON TECHNOLOGIES irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ISP16DP10LMXTSA1 INFINEON TECHNOLOGIES Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.48 EUR
Mindestbestellmenge: 1000
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IR21084STRPBF INFINEON TECHNOLOGIES ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.32 EUR
Mindestbestellmenge: 2500
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TDA21472AUMA1 INFINEON TECHNOLOGIES Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+4.3 EUR
Mindestbestellmenge: 5000
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IPB60R125C6ATMA1 IPB60R125C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG7PH35UD-EP IRG7PH35UD-EP INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221D94AD060F5F1A303005056AB0C4F&compId=irg7ph35udpbf.pdf?ci_sign=b0a671a6c320aeda0771455447aee1ad31d0d5d0 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPF016N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
800+3.36 EUR
Mindestbestellmenge: 800
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TLD21313EPXUMA1 TLD21313EPXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE988DDD314487C78BF&compId=TLD21313EP.pdf?ci_sign=6ac2d47fe11c43e63dad045b6f7c190cfad74fa0 Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
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TZ425N14KOF TZ425N14KOF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEC7DE09286469&compId=TZ425N14KOF.pdf?ci_sign=0e71217c1d4bc84f68f40fcbfe5e2e5d267da6f1 Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.4kV; 425A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 14.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: BG-PB501-1
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.5V
Load current: 425A
Produkt ist nicht verfügbar
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IRFR540ZTRLPBF INFINEON TECHNOLOGIES irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRF8734TRPBF IRF8734TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.32 EUR
79+0.91 EUR
150+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 55
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IRFS4620TRLPBF INFINEON TECHNOLOGIES irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Case: D2PAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 17A
On-state resistance: 77.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BAS7004E6327HTSA1 BAS7004E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.37 EUR
315+0.23 EUR
634+0.11 EUR
1055+0.068 EUR
1117+0.064 EUR
Mindestbestellmenge: 193
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BSS169H6906XTSA1 INFINEON TECHNOLOGIES INFNS19228-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000
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TLE9251VLEXUMA1 TLE9251VLEXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F2FE103DD3D6&compId=TLE9251V.pdf?ci_sign=e955e6c070c163e08216723f7cdf8156a1e16e3a Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-8; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TLE9251VSJXUMA1 TLE9251VSJXUMA1 INFINEON TECHNOLOGIES Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TC299TX128F300NBCKXUMA1 INFINEON TECHNOLOGIES TC290_97_98_99.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
500+87.49 EUR
Mindestbestellmenge: 500
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BCR521E6327HTSA1 BCR521E6327HTSA1 INFINEON TECHNOLOGIES bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 INFINEON TECHNOLOGIES bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5 Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.052 EUR
Mindestbestellmenge: 10000
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IRS2153DSTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437 Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IRS2109STRPBF INFINEON TECHNOLOGIES IRSDS11365-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.8 EUR
Mindestbestellmenge: 2500
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IRS21814STRPBF INFINEON TECHNOLOGIES INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.76 EUR
Mindestbestellmenge: 2500
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IRFR4104TRLPBF INFINEON TECHNOLOGIES irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
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IPB19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1 EUR
Mindestbestellmenge: 1000
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IPD19DP10NMATMA1 INFINEON TECHNOLOGIES Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.58 EUR
Mindestbestellmenge: 2500
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IPP330P10NMAKSA1 INFINEON TECHNOLOGIES Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
50+3.07 EUR
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BSC100N10NSFGATMA1 INFINEON TECHNOLOGIES BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.16 EUR
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BAT5404E6327HTSA1 BAT5404E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 30V
Load current: 0.2A
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
435+0.16 EUR
477+0.15 EUR
516+0.14 EUR
1021+0.07 EUR
1087+0.066 EUR
Mindestbestellmenge: 358
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IRFB7730PBF IRFB7730PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.56 EUR
18+4.1 EUR
22+3.27 EUR
24+3.09 EUR
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IRFS7730TRL7PP INFINEON TECHNOLOGIES irfs7730-7ppbf.pdf?fileId=5546d462533600a40153563ab68221e0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Operating temperature: -40...85°C
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 XMC4502F100F768ACXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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XMC4800F100F2048AAXQMA1 XMC4800F100F2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LQFP-100
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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XMC4700F144F2048AAXQMA1 XMC4700F144F2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LQFP-144
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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XMC4800E196F2048AAXQMA1 XMC4800E196F2048AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IR2304STRPBF INFINEON TECHNOLOGIES ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 117500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRF7379TRPBF IRF7379TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7329TRPBF INFINEON TECHNOLOGIES irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7328TRPBF IRF7328TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
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AUIRF7379QTR AUIRF7379QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRFU220NPBF IRFU220NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E77534B81F1A6F5005056AB5A8F&compId=irfr220n.pdf?ci_sign=9d90063032c51c3cdaede40f8de04e9fb81e953d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 200V
Drain current: 5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Gate charge: 15nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
60+1.2 EUR
79+0.91 EUR
130+0.55 EUR
137+0.52 EUR
Mindestbestellmenge: 60
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IPD30N03S4L09ATMA1 IPD30N03S4L09ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA431C5A27B2143&compId=IPD30N03S4L09.pdf?ci_sign=438adb46aa105baf766359ee5aef619066f5ec53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E467F845CC11C&compId=BSZ130N03LSG-DTE.pdf?ci_sign=4efa016b36e3e919650f3576dd46577ae855e941 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N03LSGATMA1 BSC030N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2942DFAC9811C&compId=BSC030N03LSG-DTE.pdf?ci_sign=90236da1284451d503f0fed752c2e6792526b2e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 BSC030N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C29AE622C2411C&compId=BSC030N03MSG-DTE.pdf?ci_sign=fa74a2d00c0b3ef0eae78e3feb1591dabba26cf5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD030N03LF2SATMA1 INFINEON TECHNOLOGIES datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Category: Transistors - Unclassified
Description: IPD030N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
2000+0.49 EUR
Mindestbestellmenge: 2000
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ESD101B102ELSE6327XTSA1 ESD101B102ELSE6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 30W
Breakdown voltage: 6.1V
Leakage current: 20nA
auf Bestellung 8267 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
323+0.22 EUR
404+0.18 EUR
575+0.12 EUR
725+0.099 EUR
770+0.093 EUR
1300+0.09 EUR
Mindestbestellmenge: 129
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IRFB4310ZPBFXKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA BTS5180-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.72 EUR
41+1.76 EUR
52+1.4 EUR
55+1.32 EUR
100+1.3 EUR
250+1.27 EUR
Mindestbestellmenge: 27
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BSS139IXTSA1 INFINEON TECHNOLOGIES Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.079 EUR
Mindestbestellmenge: 3000
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IPW60R060P7XKSA1 Infineon-IPW60R060P7-DS-v02_00-EN.pdf?fileId=5546d4625acbae4c015acce82ba2022c
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 199 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.92 EUR
120+4.43 EUR
Mindestbestellmenge: 30
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IPP120N20NFDAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC912B6685611C&compId=IPP120N20NFD-DTE.pdf?ci_sign=5d8d5dc96917148dec9e37cbde86228c5d8b765b
IPP120N20NFDAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 84A; 300W; PG-TO220-3
Case: PG-TO220-3
Mounting: THT
Drain-source voltage: 200V
Drain current: 84A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ FD
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.55 EUR
15+4.93 EUR
16+4.66 EUR
Mindestbestellmenge: 10
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BCX71HE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C516DCEB748469&compId=BCX71.pdf?ci_sign=0ef135bffc6f71658237f9d671002a459afc6363
BCX71HE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 6500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
1585+0.045 EUR
1765+0.041 EUR
1995+0.036 EUR
2275+0.031 EUR
2405+0.03 EUR
Mindestbestellmenge: 600
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IPA040N06NXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E9A76E68AEC11C&compId=IPA040N06N-DTE.pdf?ci_sign=1c3cfe6adaab2643d43a54e61f8a24ea06fa857c
IPA040N06NXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 69A
On-state resistance: 4mΩ
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPP040N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99844487E211C&compId=IPP040N06NAKSA1-DTE.pdf?ci_sign=67b0feee2a82cae98c5fb9bd1e9ad1a2ae08adee
IPP040N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Drain-source voltage: 60V
Drain current: 80A
On-state resistance: 4mΩ
Power dissipation: 107W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Produkt ist nicht verfügbar
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IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Type of transistor: N-MOSFET
Case: TO220FP
Drain-source voltage: 60V
Drain current: 51A
On-state resistance: 4mΩ
Power dissipation: 36W
Polarisation: unipolar
Kind of package: tube
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 288A
Mounting: THT
Produkt ist nicht verfügbar
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IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 6.4mΩ
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 36.7nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±16V
Pulsed drain current: 252A
Mounting: SMD
Produkt ist nicht verfügbar
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 14A
On-state resistance: 6mΩ
Power dissipation: 71W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30.5nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 241A
Mounting: SMD
Produkt ist nicht verfügbar
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IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Case: PG-TSDSON-8
Drain-source voltage: 60V
Drain current: 8A
On-state resistance: 12.8mΩ
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.3nC
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 120A
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD640N06LGBTMA1 IPD640N06L%2BG%2BRev1.4.pdf?fileId=db3a30431f848401011fcafb4ac00440&folderId=db3a30431ddc9372011ebafa04517f8b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS®; unipolar; 60V; 12A; Idm: 72A; 47W
Type of transistor: N-MOSFET
Case: PG-TO252-3
Drain-source voltage: 60V
Drain current: 12A
On-state resistance: 64mΩ
Power dissipation: 47W
Polarisation: unipolar
Technology: OptiMOS®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Produkt ist nicht verfügbar
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IRF7413ZTRPBFXTMA1 irf7413zpbf.pdf?fileId=5546d462533600a4015355fab6901bc2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ISP16DP10LMXTSA1 Infineon-ISP16DP10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017be2ca8e0c4a4d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.48 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IR21084STRPBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.32 EUR
Mindestbestellmenge: 2500
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TDA21472AUMA1 Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+4.3 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPB60R125C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73
IPB60R125C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRG7PH35UD-EP pVersion=0046&contRep=ZT&docId=E221D94AD060F5F1A303005056AB0C4F&compId=irg7ph35udpbf.pdf?ci_sign=b0a671a6c320aeda0771455447aee1ad31d0d5d0
IRG7PH35UD-EP
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 70W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 60A
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 240ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IPF016N10NF2SATMA1 Infineon-IPF016N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f3f130b05e8a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+3.36 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
TLD21313EPXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE988DDD314487C78BF&compId=TLD21313EP.pdf?ci_sign=6ac2d47fe11c43e63dad045b6f7c190cfad74fa0
TLD21313EPXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; high-side,LED driver; Litix™; PG-SSOP-14-EP; 80mA
Type of integrated circuit: driver
Kind of integrated circuit: high-side; LED driver
Technology: Litix™
Case: PG-SSOP-14-EP
Output current: 80mA
Number of channels: 3
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 5.5...40V DC
Protection: overheating OTP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TZ425N14KOF pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CEC7DE09286469&compId=TZ425N14KOF.pdf?ci_sign=0e71217c1d4bc84f68f40fcbfe5e2e5d267da6f1
TZ425N14KOF
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 1.4kV; 425A; BG-PB501-1
Semiconductor structure: single thyristor
Gate current: 300mA
Max. forward impulse current: 14.5kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Case: BG-PB501-1
Max. off-state voltage: 1.4kV
Max. forward voltage: 1.5V
Load current: 425A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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IRF8734TRPBF pVersion=0046&contRep=ZT&docId=E221AE68DFF128F1A303005056AB0C4F&compId=irf8734pbf.pdf?ci_sign=d66a79d1ccd4cf24541e0d32ca4477ec60165a7c
IRF8734TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
auf Bestellung 3078 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.32 EUR
79+0.91 EUR
150+0.48 EUR
158+0.45 EUR
2000+0.44 EUR
Mindestbestellmenge: 55
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IRFS4620TRLPBF irfs4620pbf.pdf?fileId=5546d462533600a40153563a4cc721be
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 17A; Idm: 100A; 144W; D2PAK
Case: D2PAK
Mounting: SMD
Drain-source voltage: 200V
Drain current: 17A
On-state resistance: 77.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 144W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 100A
Produkt ist nicht verfügbar
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BAS7004E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7004E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 1857 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
315+0.23 EUR
634+0.11 EUR
1055+0.068 EUR
1117+0.064 EUR
Mindestbestellmenge: 193
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BSS169H6906XTSA1 INFNS19228-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.32 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
TLE9251VLEXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F2FE103DD3D6&compId=TLE9251V.pdf?ci_sign=e955e6c070c163e08216723f7cdf8156a1e16e3a
TLE9251VLEXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-TSON-8; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-TSON-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TLE9251VSJXUMA1 Infineon-TLE9251V-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e14b8c287597b
TLE9251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Mounting: SMD
Interface: CAN-FD
Integrated circuit features: WUP
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TC299TX128F300NBCKXUMA1 TC290_97_98_99.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+87.49 EUR
Mindestbestellmenge: 500
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BCR521E6327HTSA1 bcr521.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407b78610308
BCR521E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 1kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Produkt ist nicht verfügbar
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BAV199E6433HTMA1 bav199series.pdf?folderId=db3a30431400ef6801141c748874044e&fileId=db3a30431400ef6801141cba733104e5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.052 EUR
Mindestbestellmenge: 10000
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IRS2153DSTRPBF pVersion=0046&contRep=ZT&docId=E1C04EA78A4D00F1A6F5005056AB5A8F&compId=irs2153d.pdf?ci_sign=778861680765d46b3e732f7e972a8e0a59a6a437
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -260...180mA
Power: 625mW
Number of channels: 2
Supply voltage: 10.1...16.8V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
Integrated circuit features: dead time; front end oscillator; integrated bootstrap functionality
Produkt ist nicht verfügbar
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IRS2109STRPBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.8 EUR
Mindestbestellmenge: 2500
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IRS21814STRPBF INFN-S-A0002363258-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.76 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRFR4104TRLPBF irfr4104pbf.pdf?fileId=5546d462533600a40153563207e320e6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.24 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IPB19DP10NMATMA1 Infineon-IPB19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9416da34eb5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IPD19DP10NMATMA1 Infineon-IPD19DP10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde08b35a1bae
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.58 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP330P10NMAKSA1 Infineon-IPP330P10NM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bde48dfab1c0f
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPP330P10NMAKSA1
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+3.07 EUR
Mindestbestellmenge: 50
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BSC100N10NSFGATMA1 BSC100N10NSF+Rev2.06.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431b3e89eb011b49a75b607b57
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.16 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BAT5404E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5404E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 230mW
Semiconductor structure: double series
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Type of diode: Schottky rectifying
Mounting: SMD
Case: SOT23
Max. off-state voltage: 30V
Load current: 0.2A
auf Bestellung 2525 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
435+0.16 EUR
477+0.15 EUR
516+0.14 EUR
1021+0.07 EUR
1087+0.066 EUR
Mindestbestellmenge: 358
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IRFB7730PBF pVersion=0046&contRep=ZT&docId=005056AB752F1EE58D8A5A09C3C68469&compId=IRFB7730PBF.pdf?ci_sign=f1135565e8d5008d31f5ebd82a3d3e627ae7a3bd
IRFB7730PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 246A
Power dissipation: 375W
Case: TO220AB
On-state resistance: 2.2mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.56 EUR
18+4.1 EUR
22+3.27 EUR
24+3.09 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IRFS7730TRL7PP irfs7730-7ppbf.pdf?fileId=5546d462533600a40153563ab68221e0
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 269A; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 269A
Case: D2PAK-7
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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XMC4200F64F256ABXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC20BA4EFF10FA8&compId=XMC4100-4200-DTE.pdf?ci_sign=e195f2c2d238b40092cb8815d537c2c67d2aa9b6
XMC4200F64F256ABXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Operating temperature: -40...85°C
Case: PG-LQFP-64
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 35
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 9
Kind of architecture: Cortex M4
Family: XMC4200
Memory: 40kB SRAM; 256kB FLASH
Produkt ist nicht verfügbar
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XMC4502F100F768ACXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2140B198CEFA8&compId=XMC4500-DTE.pdf?ci_sign=91394217979077a9021b35e85d014a7489a5795a
XMC4502F100F768ACXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 160kBSRAM,768kBFLASH
Supply voltage: 3.3V DC
Type of integrated circuit: ARM microcontroller
Interface: CAN x3; GPIO; I2C; I2S; LIN; SPI; UART; USB
Number of inputs/outputs: 55
Number of 16bit timers: 26
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4500
Memory: 160kB SRAM; 768kB FLASH
Operating temperature: -40...85°C
Case: PG-LQFP-100
Produkt ist nicht verfügbar
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XMC4800F100F2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800F100F2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-100; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LQFP-100
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 18
Kind of architecture: Cortex M4
Family: XMC4800
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 75
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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XMC4700F144F2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700F144F2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-144; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LQFP-144
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 119
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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XMC4800E196F2048AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196F2048AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 352kBSRAM,2048kBFLASH
Type of integrated circuit: ARM microcontroller
Memory: 352kB SRAM; 2MB FLASH
Case: PG-LFBGA-196
Operating temperature: -40...85°C
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Produkt ist nicht verfügbar
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IR2304STRPBF ir2304.pdf?fileId=5546d462533600a4015355c9954a16e0
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 117500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.77 EUR
Mindestbestellmenge: 2500
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IRF7379TRPBF pVersion=0046&contRep=ZT&docId=E221A123F0D391F1A303005056AB0C4F&compId=irf7379pbf.pdf?ci_sign=dcd81d555b016082d976d83dba1dd0223787cfe8
IRF7379TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7329TRPBF irf7329pbf.pdf?fileId=5546d462533600a4015355f617841b55
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 12V; 9.2A; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 9.2A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF7328TRPBF pVersion=0046&contRep=ZT&docId=E2219F99701188F1A303005056AB0C4F&compId=irf7328pbf.pdf?ci_sign=1056fd32db11150a9acdcdcd1953f3b20c8dc7dd
IRF7328TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 2W
Produkt ist nicht verfügbar
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AUIRF7379QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D7464F1A6F5005056AB5A8F&compId=auirf7379q.pdf?ci_sign=b23d50bc5b963af5978a81d146c110175c10ccaf
AUIRF7379QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 38/70mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 16.7nC
Produkt ist nicht verfügbar
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IRFU220NPBF pVersion=0046&contRep=ZT&docId=E1C04E77534B81F1A6F5005056AB5A8F&compId=irfr220n.pdf?ci_sign=9d90063032c51c3cdaede40f8de04e9fb81e953d
IRFU220NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; 43W; IPAK
Case: IPAK
Mounting: THT
Drain-source voltage: 200V
Drain current: 5A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 43W
Polarisation: unipolar
Gate charge: 15nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 170 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
60+1.2 EUR
79+0.91 EUR
130+0.55 EUR
137+0.52 EUR
Mindestbestellmenge: 60
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IPD30N03S4L09ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA431C5A27B2143&compId=IPD30N03S4L09.pdf?ci_sign=438adb46aa105baf766359ee5aef619066f5ec53
IPD30N03S4L09ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E467F845CC11C&compId=BSZ130N03LSG-DTE.pdf?ci_sign=4efa016b36e3e919650f3576dd46577ae855e941
BSZ130N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC030N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2942DFAC9811C&compId=BSC030N03LSG-DTE.pdf?ci_sign=90236da1284451d503f0fed752c2e6792526b2e2
BSC030N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C29AE622C2411C&compId=BSC030N03MSG-DTE.pdf?ci_sign=fa74a2d00c0b3ef0eae78e3feb1591dabba26cf5
BSC030N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD030N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.49 EUR
Mindestbestellmenge: 2000
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ESD101B102ELSE6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BAA359ED1B753D7&compId=ESD101B102ELSE6327XTSA1.pdf?ci_sign=2c0aaca5d684a303278d2e5aa520ffa4f7989402
ESD101B102ELSE6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 30W; 6.1V; 2A; bidirectional; TSSLP-2-4; reel,tape; ESD
Type of diode: TVS
Case: TSSLP-2-4
Mounting: SMD
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Max. forward impulse current: 2A
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 30W
Breakdown voltage: 6.1V
Leakage current: 20nA
auf Bestellung 8267 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
323+0.22 EUR
404+0.18 EUR
575+0.12 EUR
725+0.099 EUR
770+0.093 EUR
1300+0.09 EUR
Mindestbestellmenge: 129
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IRFB4310ZPBFXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS5180-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698775F8CE50469&compId=BTS5180-2EKA.pdf?ci_sign=dcbfa526d3bc10e800b4f1d73c4a0cc27042a66a
BTS5180-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 2; N-Channel; SMD; SO14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.5A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: SO14
On-state resistance: 0.33Ω
Supply voltage: 8...18V DC
Technology: PROFET™+ 12V
auf Bestellung 1280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.72 EUR
41+1.76 EUR
52+1.4 EUR
55+1.32 EUR
100+1.3 EUR
250+1.27 EUR
Mindestbestellmenge: 27
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BSS139IXTSA1 Infineon-BSS139I-DataSheet-v02_01-EN.pdf?fileId=5546d46277921c320177a421f99f1d4f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.079 EUR
Mindestbestellmenge: 3000
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