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IAUC60N04S6L039ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6L045HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N031HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N044ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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IAUC60N04S6N050HATMA1 INFINEON TECHNOLOGIES Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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IRL6372TRPBF IRL6372TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222764C02FEBAF1A303005056AB0C4F&compId=irl6372pbf.pdf?ci_sign=a264412f72f1908b1edf5c3bde12e71c2523e4ea Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 149 Stücke:
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77+0.93 EUR
100+0.72 EUR
149+0.49 EUR
Mindestbestellmenge: 77
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IRF7476TRPBF IRF7476TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC7C2A66EC15EA&compId=IRF7476TRPBF.pdf?ci_sign=b1c4f1bfe59b7dbebf2400bda4e8a1bdcacd0956 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSZ15DC02KDHXTMA1 BSZ15DC02KDHXTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C0BF1F03B6E469&compId=BSZ15DC02KDHXTMA1.pdf?ci_sign=f83c7fa189c244298cf4be3af785f8d1245c2942 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
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BCV62BE6327 BCV62BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24 Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
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BCV62BE6327HTSA1 INFINEON TECHNOLOGIES bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230 Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 6000 Stücke:
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Mindestbestellmenge: 3000
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F475R06W1E3BOMA1 INFINEON TECHNOLOGIES Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
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BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1986 Stücke:
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115+0.62 EUR
130+0.55 EUR
214+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 107
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BSC080N03MSGATMA1 BSC080N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
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100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.40 EUR
Mindestbestellmenge: 100
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BSC0902NSATMA1 BSC0902NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC009NE2LSATMA1 BSC009NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC010NE2LSATMA1 BSC010NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC010NE2LSIATMA1 BSC010NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC011N03LSATMA1 BSC011N03LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC011N03LSIATMA1 BSC011N03LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC014NE2LSIATMA1 BSC014NE2LSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC019N04LSATMA1 BSC019N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSC024NE2LSATMA1 BSC024NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSC026N04LSATMA1 BSC026N04LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
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BSC026NE2LS5ATMA1 BSC026NE2LS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC0904NSIATMA1 BSC0904NSIATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP016N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP016N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180fd60a1443c7d Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
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50+1.57 EUR
Mindestbestellmenge: 50
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CY7C1061GE30-10BV1XIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY7C1041GE30-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY7C1061GE30-10BV1XI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVJXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10ZSXIT INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10ZSXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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BSP296NH6433XTMA1 INFINEON TECHNOLOGIES BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
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4000+0.34 EUR
Mindestbestellmenge: 4000
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IPB600N25N3GATMA1 IPB600N25N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIPS7091GTR AUIPS7091GTR INFINEON TECHNOLOGIES auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
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SI4435DYTRPBF SI4435DYTRPBF INFINEON TECHNOLOGIES si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983 description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
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61+1.17 EUR
85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.40 EUR
Mindestbestellmenge: 61
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BAS12507WH6327XTSA1 BAS12507WH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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TLE9250XSJXUMA1 TLE9250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE9250SJXUMA1 TLE9250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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TLE9250VSJXUMA1 TLE9250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
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IRFHM9331TRPBF IRFHM9331TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -9A
Type of transistor: P-MOSFET
Power dissipation: 2.8W
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
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IRFH9310TRPBF IRFH9310TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
auf Bestellung 3480 Stücke:
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40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
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IR4311MTRPBF IR4311MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Produkt ist nicht verfügbar
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IR4312MTRPBF IR4312MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2 Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Produkt ist nicht verfügbar
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IRFHM3911TRPBF INFINEON TECHNOLOGIES irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
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S29JL064J55TFI003 INFINEON TECHNOLOGIES Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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100+0.97 EUR
Mindestbestellmenge: 100
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA41A369E46143&compId=IPN70R1K5CE.pdf?ci_sign=7b64cee31104df33c4e4b91fb5a60fa891f6314b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 3.4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
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IPN70R1K0CEATMA1 IPN70R1K0CEATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
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IPN60R1K5CEATMA1 INFINEON TECHNOLOGIES Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 8.4A
Case: PG-SOT223
Produkt ist nicht verfügbar
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BTN8962TAAUMA1 BTN8962TAAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9 Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
16+4.59 EUR
17+4.33 EUR
100+4.16 EUR
Mindestbestellmenge: 11
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S25FS064SAGNFB033 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
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TLE9255WLCXUMA1 INFINEON TECHNOLOGIES Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5 Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 8197 Stücke:
Lieferzeit 14-21 Tag (e)
5000+2.20 EUR
Mindestbestellmenge: 5000
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SN7002NH6433XTMA1 SN7002NH6433XTMA1 INFINEON TECHNOLOGIES Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.16A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
407+0.18 EUR
573+0.12 EUR
665+0.11 EUR
1257+0.06 EUR
1330+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 250
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IPD70R900P7SAUMA1 IPD70R900P7SAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 IPN70R900P7SATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IAUC60N04S6L039ATMA1 Infineon-IAUC60N04S6L039-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c511cb70df6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 54A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 54A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 5.9mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6L045HATMA1 Infineon-IAUC60N04S6L045H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753091111b5fec
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 18A; Idm: 193A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 193A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N031HATMA1 Infineon-IAUC60N04S6N031H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb320175309103dd5fe9
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 22A; Idm: 311A; 75W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 311A
Power dissipation: 75W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N044ATMA1 Infineon-IAUC60N04S6N044-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1c8843d110a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 50A; Idm: 240A; 42W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IAUC60N04S6N050HATMA1 Infineon-IAUC60N04S6N050H-DataSheet-v01_00-EN.pdf?fileId=5546d4627506bb3201753090f4715fe6
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 16A; Idm: 171A; 52W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 16A
Pulsed drain current: 171A
Power dissipation: 52W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL6372TRPBF pVersion=0046&contRep=ZT&docId=E222764C02FEBAF1A303005056AB0C4F&compId=irl6372pbf.pdf?ci_sign=a264412f72f1908b1edf5c3bde12e71c2523e4ea
IRL6372TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.1A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 17.9mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
77+0.93 EUR
100+0.72 EUR
149+0.49 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
IRF7476TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC7C2A66EC15EA&compId=IRF7476TRPBF.pdf?ci_sign=b1c4f1bfe59b7dbebf2400bda4e8a1bdcacd0956
IRF7476TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 15A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 12V
Drain current: 15A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ15DC02KDHXTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE594C0BF1F03B6E469&compId=BSZ15DC02KDHXTMA1.pdf?ci_sign=f83c7fa189c244298cf4be3af785f8d1245c2942
BSZ15DC02KDHXTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.1/-3.2A; 2.5W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 5.1/-3.2A
Power dissipation: 2.5W
Case: PG-TSDSON-8
Gate-source voltage: ±12V
On-state resistance: 63/164mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 2
Produkt ist nicht verfügbar
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BCV62BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5428778BE0469&compId=BCV62.pdf?ci_sign=d0c188643225297faa79299169dd54df85009d24
BCV62BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Frequency: 250MHz
Collector-emitter voltage: 30V
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Polarisation: bipolar
Produkt ist nicht verfügbar
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BCV62BE6327HTSA1 bcv62.pdf?folderId=db3a30431441fb5d0114498f7eab01ce&fileId=db3a30431441fb5d011449a5795f0230
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
F475R06W1E3BOMA1 Infineon-F4_75R06W1E3-DS-v03_00-en_de.pdf?fileId=db3a304313b8b5a60113baa00d5d00b8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A
Power dissipation: 275W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPACK™ 1B
Topology: IGBT half-bridge x2; NTC thermistor
Type of semiconductor module: IGBT
Case: AG-EASY1B-1
Max. off-state voltage: 0.6kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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BSC340N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DBADED761611C&compId=BSC340N08NS3G-DTE.pdf?ci_sign=aa9b337a0db21dfe8f5ac636b1ed5ff1110c9458
BSC340N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23A
Power dissipation: 32W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
115+0.62 EUR
130+0.55 EUR
214+0.33 EUR
227+0.32 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
BSC080N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A387420481F9A11C&compId=BSC080N03MSG-DTE.pdf?ci_sign=67d4652ce5e7611550106b6c964b5ad6af114d39
BSC080N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 35W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1871 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
133+0.54 EUR
166+0.43 EUR
175+0.41 EUR
1000+0.40 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BSC0902NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3875541E9DFA11C&compId=BSC0902NS-DTE.pdf?ci_sign=203977e4a66c3f26c2bd7c796245641d42955b1d
BSC0902NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 91A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 91A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC009NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C232ADC6DE811C&compId=BSC009NE2LS-DTE.pdf?ci_sign=474c14cd09ac2b54f5c408db185963e09191a5c0
BSC009NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 0.9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD29AC7BFD011C&compId=BSC010NE2LS-DTE.pdf?ci_sign=4037dffe638488c62f3a77b32205acbf9b96de48
BSC010NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 39A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 39A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC010NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD40EAD5E9A11C&compId=BSC010NE2LSI-DTE.pdf?ci_sign=ab0e926d776d7e5a1947b6a42d0ee3b7e575e2bc
BSC010NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 38A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 38A
Power dissipation: 96W
Case: PG-TDSON-8
On-state resistance: 1.05mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C250285237211C&compId=BSC011N03LS-DTE.pdf?ci_sign=8507a022bc1117b9821b6b91046b3e0aa399e520
BSC011N03LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC011N03LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2520F0C19C11C&compId=BSC011N03LSI-DTE.pdf?ci_sign=03f69ceb77307fa7fb2c04624043f8eedeb8807d
BSC011N03LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC014NE2LSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C261A139DAE11C&compId=BSC014NE2LSI-DTE.pdf?ci_sign=0a69ffadf1ecef5f2deecb3baae5b5493d0cb0ab
BSC014NE2LSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 74W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC019N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C276C164B8C11C&compId=BSC019N04LS-DTE.pdf?ci_sign=24f98007f7062467d0d86250c8fc347c8ca5891a
BSC019N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 78W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 1.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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BSC024NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0DD7287EF0E811C&compId=BSC024NE2LS-dte.pdf?ci_sign=02f2819344fa6536fccc816908b39ac8866af181
BSC024NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 25A; 48W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 25V
Drain current: 25A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 48W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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BSC026N04LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C28471E353E11C&compId=BSC026N04LS-DTE.pdf?ci_sign=95197db971ae602846dd7418207997742f7e4fba
BSC026N04LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 63W; PG-TDSON-8
Case: PG-TDSON-8
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 2.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 63W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Produkt ist nicht verfügbar
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BSC026NE2LS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C287232F8F811C&compId=BSC026NE2LS5-DTE.pdf?ci_sign=9ba57efedcf67f25fbe19cd1bedc471bcf370d94
BSC026NE2LS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 66A; 29W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 66A
Power dissipation: 29W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 2.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC032NE2LSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A99160AE011C&compId=BSC032NE2LS-DTE.pdf?ci_sign=fba83687b313e70a9dcdb9920d08f73dceae32cc
BSC032NE2LSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 84A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC0904NSIATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38758E954B4211C&compId=BSC0904NSI-DTE.pdf?ci_sign=e9c94f7c05748051f1ed689d5cad20d2a4808e92
BSC0904NSIATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP016N06NF2SAKMA1 Infineon-IPP016N06NF2S-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c80f4d3290180fd60a1443c7d
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.57 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10BV1XIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1041GE30-10ZSXIT Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BV1XI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVJXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10ZSXIT download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1061GE30-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1061GE30-10ZSXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; TSOP54 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Access time: 10ns
Case: TSOP54 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP296NH6433XTMA1 BSP296N_rev2+0.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433dd58def013dd5af675d001f
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.34 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
IPB600N25N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC3B5872EA11C&compId=IPB600N25N3G-DTE.pdf?ci_sign=0c8b0a11b5bacba491b0b72986cefacf94736e41
IPB600N25N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 25A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 25A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIPS7091GTR auips7091.pdf?fileId=5546d462533600a4015355a7c0d21322
AUIPS7091GTR
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 8A; Ch: 1; N-Channel; SMD; SO8; reel
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.12Ω
Kind of package: reel
Technology: Classic PROFET
Operating temperature: -40...150°C
Power dissipation: 1.25W
Application: automotive industry
Produkt ist nicht verfügbar
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SI4435DYTRPBF description si4435dypbf.pdf?fileId=5546d462533600a4015356847c882983
SI4435DYTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.4A; Idm: -50A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.4A
Pulsed drain current: -50A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 2950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
85+0.85 EUR
166+0.43 EUR
175+0.41 EUR
2000+0.40 EUR
Mindestbestellmenge: 61
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BAS12507WH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DF13B870A32469&compId=BAS125-0xW.pdf?ci_sign=f5f44dc4e7ac8e846a5816e0f88ba496aa18aa00
BAS12507WH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT343; SMD; 25V; 0.1A; 250mW
Mounting: SMD
Case: SOT343
Max. off-state voltage: 25V
Load current: 0.1A
Semiconductor structure: double independent
Max. forward impulse current: 0.5A
Power dissipation: 0.25W
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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TLE9250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8F0D2A09A53D6&compId=TLE9250X.pdf?ci_sign=6fe83aa8e5c15628008a3e39793af6518485ff06
TLE9250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B7D453D3C213D6&compId=TLE9250.pdf?ci_sign=27ba1db29d95de7cb919defc054a8b5952db1824
TLE9250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B8ED46D599F3D6&compId=TLE9250V.pdf?ci_sign=9527e63d6b8a7c9a9723676138a31f8f8e6d0361
TLE9250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC,4.5÷5.5VDC; PG-DSO-8; 60mA
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 3...5.5V DC; 4.5...5.5V DC
Case: PG-DSO-8
Interface: CAN-FD
Mounting: SMD
Operating temperature: -40...150°C
Number of receivers: 1
Number of transmitters: 1
Kind of package: reel; tape
DC supply current: 60mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFHM9331TRPBF pVersion=0046&contRep=ZT&docId=E221BBF9CE5E22F1A303005056AB0C4F&compId=irfhm9331pbf.pdf?ci_sign=8cc3c5ff5376bc1ed9debc3ee244e7b25088f040
IRFHM9331TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; 2.8W; PQFN3.3X3.3
Case: PQFN3.3X3.3
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -9A
Type of transistor: P-MOSFET
Power dissipation: 2.8W
auf Bestellung 3450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
107+0.67 EUR
203+0.35 EUR
215+0.33 EUR
2000+0.32 EUR
Mindestbestellmenge: 95
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IRFH9310TRPBF pVersion=0046&contRep=ZT&docId=E221BAE9CF58A4F1A303005056AB0C4F&compId=irfh9310pbf.pdf?ci_sign=48812bd2ff057ffc8ba4f95f0f18c126be688947
IRFH9310TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -17A; 3.1W; PQFN5X6
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhancement
Drain-source voltage: -30V
Drain current: -17A
Type of transistor: P-MOSFET
Power dissipation: 3.1W
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
48+1.52 EUR
61+1.19 EUR
65+1.12 EUR
250+1.07 EUR
Mindestbestellmenge: 40
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IR4311MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC33777F7675EA&compId=IR4311MTRPBF.pdf?ci_sign=5a483b99b10824afc59ab00c4bd5168595648f79
IR4311MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 1; Amp.class: D; PQFN5X6
Type of integrated circuit: audio amplifier
Case: PQFN5X6
Mounting: SMD
Amplifier class: D
Number of channels: 1
Output power: 35W
Produkt ist nicht verfügbar
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IR4312MTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC35B0725435EA&compId=IR4312MTRPBF.pdf?ci_sign=4da8d2b0f175fe9c3d571fc5f1b21876e749c2d2
IR4312MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 35W; Ch: 2; Amp.class: D; PQFN7X7
Type of integrated circuit: audio amplifier
Case: PQFN7X7
Mounting: SMD
Amplifier class: D
Number of channels: 2
Output power: 35W
Produkt ist nicht verfügbar
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IRFHM3911TRPBF irfhm3911pbf.pdf?fileId=5546d462533600a40153561ff23f1f2b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.2A; PQFN8
Case: PQFN8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Drain-source voltage: 100V
Drain current: 3.2A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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S29JL064J55TFI003 Infineon-S29JL064J_64_Mb_(8M_x_8_Bit_4M_x_16_Bit)_3_V_Simultaneous_Read_Write_Flash-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed6688c56c7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 55ns; TSOP48; parallel
Operating temperature: -40...85°C
Case: TSOP48
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: CFI; parallel
Kind of memory: NOR Flash
Access time: 55ns
Kind of package: reel; tape
Kind of interface: parallel
Memory: 64Mb FLASH
Mounting: SMD
Produkt ist nicht verfügbar
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IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.97 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IPW60R099C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5952403C1FAD1BF&compId=IPW60R099C6-DTE.pdf?ci_sign=0ff4e9262369219235dac83c27672666e66fcd60
IPW60R099C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R1K5CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA41A369E46143&compId=IPN70R1K5CE.pdf?ci_sign=7b64cee31104df33c4e4b91fb5a60fa891f6314b
IPN70R1K5CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 3.4A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 10.5nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN70R1K0CEATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA457EA6188143&compId=IPN70R1K0CE.pdf?ci_sign=fdb6d19cf093910697e21e04ce0a35d5565b49ea
IPN70R1K0CEATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 700V
Drain current: 4.7A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Gate charge: 15.2nC
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-SOT223
Produkt ist nicht verfügbar
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IPN60R1K5CEATMA1 Infineon-IPN60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af653155b49
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.2A; Idm: 8.4A; 5W; PG-SOT223
Mounting: SMD
Drain-source voltage: 650V
Drain current: 3.2A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 8.4A
Case: PG-SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTN8962TAAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF185DE8D6A8745&compId=BTN8962TA.pdf?ci_sign=6c5456d10cf0b4baf788f9d1d1f4df19bed07ba9
BTN8962TAAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Output current: -27...30A
Number of channels: 1
Mounting: SMD
On-state resistance: 14.2mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V DC
Kind of package: reel; tape
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.51 EUR
16+4.59 EUR
17+4.33 EUR
100+4.16 EUR
Mindestbestellmenge: 11
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S25FS064SAGNFB033
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 133MHz; 1.7÷2V; LGA8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 1.7...2V
Case: LGA8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Application: automotive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9255WLCXUMA1 Infineon-TLE9255W-DS-v01_01-EN.pdf?fileId=5546d4625bd71aa0015c10eaeaf93ee5
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface
Type of integrated circuit: interface
auf Bestellung 8197 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+2.20 EUR
Mindestbestellmenge: 5000
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SN7002NH6433XTMA1 Infineon-SN7002N-DS-v02_06-en.pdf?fileId=db3a304330f6860601311934e76045d5
SN7002NH6433XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Power dissipation: 0.36W
Case: SOT23
Drain-source voltage: 60V
Drain current: 0.16A
On-state resistance: 5Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
auf Bestellung 5260 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
407+0.18 EUR
573+0.12 EUR
665+0.11 EUR
1257+0.06 EUR
1330+0.05 EUR
5000+0.05 EUR
Mindestbestellmenge: 250
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IPD70R900P7SAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFD1AC19AA1CA259&compId=IPD70R900P7S.pdf?ci_sign=746f7b1943fba9fedd7a1fb78f582f1027187f3b
IPD70R900P7SAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 30.5W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 30.5W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPN70R900P7SATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBA526BEF5A6143&compId=IPN70R900P7S.pdf?ci_sign=003efb79197d315493859738eb83e97ee6904935
IPN70R900P7SATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 3.5A; 6.5W; PG-SOT223; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.5A
Power dissipation: 6.5W
Case: PG-SOT223
Gate-source voltage: ±16V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 6.8nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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