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BC857AE6327 BC857AE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)
1441+0.05 EUR
1557+0.046 EUR
Mindestbestellmenge: 1441
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IRF9Z34NPBF IRF9Z34NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B680F1A6F5005056AB5A8F&compId=irf9z34n.pdf?ci_sign=d4acb9fe5df062d3e293b8568a174e680d014d81 description Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
67+1.08 EUR
91+0.79 EUR
159+0.45 EUR
174+0.41 EUR
Mindestbestellmenge: 54
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IKP15N65F5XKSA1 IKP15N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR2104PBF IR2104PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.75 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 20
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IR2104SPBF IR2104SPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E2EFD33E1F1A6F5005056AB5A8F&compId=ir2104.pdf?ci_sign=4359ee0159dafd1f6920f459f6db4eb8bb7e1e9d description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.19 EUR
42+1.72 EUR
45+1.6 EUR
48+1.5 EUR
Mindestbestellmenge: 33
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IR2104STRPBF IR2104STRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1 description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1271 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
67+1.08 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 50
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IGB50N60TATMA1 IGB50N60TATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31590A7878FA8&compId=IGB50N60T-DTE.pdf?ci_sign=60db27e8dc1b6cad47cbf90a3606a38d6dfebaed Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP50N60TXKSA1 IGP50N60TXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B359F284B34FA8&compId=IGP50N60T-DTE.pdf?ci_sign=2b05383ced2cbae508f7c97aac42cd7ba476fbe1 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGW50N60H3FKSA1 IGW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.65 EUR
22+3.26 EUR
24+3.07 EUR
30+2.97 EUR
Mindestbestellmenge: 16
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IGW50N60TFKSA1 IGW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.22 EUR
17+4.23 EUR
18+3.99 EUR
30+3.85 EUR
Mindestbestellmenge: 14
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IKW50N60DTPXKSA1 IKW50N60DTPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 23
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IKW50N60H3FKSA1 IKW50N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.71 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 13
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IKW50N60TFKSA1 IKW50N60TFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.34 EUR
15+4.78 EUR
Mindestbestellmenge: 10
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AIKW50N60CTXKSA1 AIKW50N60CTXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW50N60DH3EXKSA1 IKFW50N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
6+11.91 EUR
Mindestbestellmenge: 6
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IKFW50N60ETXKSA1 IKFW50N60ETXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD50N06S409ATMA2 INFINEON TECHNOLOGIES INFNS13307-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N06S4L08ATMA2 INFINEON TECHNOLOGIES INFNS14103-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50N06S4L12ATMA2 IPD50N06S4L12ATMA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1985 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
82+0.88 EUR
89+0.81 EUR
91+0.79 EUR
94+0.77 EUR
100+0.74 EUR
Mindestbestellmenge: 55
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IPD350N06LGBTMA1 IPD350N06LGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 48
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IRF7313TRPBF IRF7313TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565 description Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Case: SO8
Polarisation: unipolar
Power dissipation: 2W
Drain current: 6.5A
Drain-source voltage: 30V
auf Bestellung 3980 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
86+0.84 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 61
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AUIRF7341QTR AUIRF7341QTR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSS84PWH6327XTSA1 BSS84PWH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 5582 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
725+0.099 EUR
930+0.077 EUR
1027+0.07 EUR
1534+0.047 EUR
1624+0.044 EUR
Mindestbestellmenge: 500
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IKW25N120H3FKSA1 IKW25N120H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 115nC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.33 EUR
17+4.36 EUR
18+4.13 EUR
Mindestbestellmenge: 12
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IRFZ44NPBF IRFZ44NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.39 EUR
63+1.14 EUR
78+0.92 EUR
191+0.38 EUR
202+0.35 EUR
Mindestbestellmenge: 52
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IRFZ44NSTRLPBF IRFZ44NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IGW60N60H3FKSA1 IGW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Manufacturer series: H3
auf Bestellung 190 Stücke:
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10+7.85 EUR
12+6.29 EUR
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IKW60N60H3FKSA1 IKW60N60H3FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Manufacturer series: H3
auf Bestellung 1 Stücke:
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1+71.5 EUR
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IKFW60N60DH3EXKSA1 IKFW60N60DH3EXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
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IKFW60N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
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IRFP9140NPBF IRFP9140NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C0AEF1A6F5005056AB5A8F&compId=irfp9140n.pdf?ci_sign=3ac34c20dff7ec6e6196f54516d588001a1d186d Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 114 Stücke:
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25+2.95 EUR
34+2.14 EUR
63+1.14 EUR
67+1.07 EUR
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IRF640NPBF IRF640NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E47020E91F1A6F5005056AB5A8F&compId=irf640n.pdf?ci_sign=a9c4739e332ce1226d87e9114bce505a5c92ddab Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 2058 Stücke:
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53+1.36 EUR
70+1.03 EUR
88+0.82 EUR
161+0.44 EUR
171+0.42 EUR
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IRF640NSTRLPBF IRF640NSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F67C6956B2FF1A303005056AB0C4F&compId=irf640npbf.pdf?ci_sign=c65d3861a70faebe14223419d628e69e4794476e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1604 Stücke:
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55+1.31 EUR
114+0.63 EUR
121+0.59 EUR
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IRL540NPBF IRL540NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7E0CF1A6F5005056AB5A8F&compId=irl540n.pdf?ci_sign=fffe8e2f0bd2c3ceeafab0607703bfe148937036 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 2121 Stücke:
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37+1.97 EUR
44+1.66 EUR
53+1.35 EUR
122+0.59 EUR
130+0.55 EUR
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IRFP4668PBF IRFP4668PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E6B43C092F1A6F5005056AB5A8F&compId=irfp4668pbf.pdf?ci_sign=45a153989e46de31f118c0c4d47723eb943f959c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 9.7mΩ
Gate-source voltage: ±30V
Gate charge: 161nC
Technology: HEXFET®
Power dissipation: 520W
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SPD04N60C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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SPP24N60C3 SPP24N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C338FC109074A&compId=SPP24N60C3.pdf?ci_sign=9b76c37c48399245f85e35d54b51d528dfd0f521 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
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BSP373NH6327XTSA1 BSP373NH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698AF53C194611C&compId=BSP373NH6327-DTE.pdf?ci_sign=1be32fe62dee5c6145f94a436eb224a821e0b90f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 0.24Ω
Drain current: 1.8A
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
97+0.74 EUR
106+0.67 EUR
139+0.52 EUR
147+0.49 EUR
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IRF3710LPBF IRF3710LPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
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IRF3710PBF IRF3710PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7A9BF1A6F5005056AB5A8F&compId=irf3710.pdf?ci_sign=58420826307cbd2f57fbdcc4bdcc928b163a71e8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 43 Stücke:
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32+2.29 EUR
43+1.66 EUR
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IRF3710STRLPBF IRF3710STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 709 Stücke:
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31+2.36 EUR
42+1.7 EUR
85+0.85 EUR
90+0.8 EUR
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IRF3710STRRPBF IRF3710STRRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
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IRF3710ZPBF IRF3710ZPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E40FB7AA9F1A6F5005056AB5A8F&compId=irf3710z.pdf?ci_sign=f9d6d4f1059e7eaeb12e5a0e9cd515b090f6184f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 82nC
Kind of package: tube
auf Bestellung 268 Stücke:
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31+2.33 EUR
57+1.26 EUR
85+0.85 EUR
90+0.8 EUR
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IRF3710ZSTRLPBF IRF3710ZSTRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F625028A726F1A303005056AB0C4F&compId=irf3710zpbf.pdf?ci_sign=70754467c74fb0376ae6b25e3bd2dab2f3f80757 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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AUIRF3710ZSTRL AUIRF3710ZSTRL INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C045883D5208F1A6F5005056AB5A8F&compId=auirf3710z.pdf?ci_sign=6c2c0c9f256e5a525498972404a7f2a1a6ec5bed Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRFP250MPBF IRFP250MPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAEBDC8FAB880E0C7&compId=irfp250mpbf.pdf?ci_sign=ce2f9fec1af75e4313268991e3189becda06ef59 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
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22+3.27 EUR
26+2.85 EUR
29+2.55 EUR
53+1.34 EUR
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IRFP250NPBF IRFP250NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACAB8F1A6F5005056AB5A8F&compId=irfp250n.pdf?ci_sign=efbdd605b5da163688cfe68402cea5bf7e3f98b6 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 661 Stücke:
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20+3.65 EUR
28+2.6 EUR
64+1.13 EUR
67+1.07 EUR
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IRFP260MPBF IRFP260MPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BEC03C8E98F1A303005056AB0C4F&compId=irfp260mpbf.pdf?ci_sign=4f4a731c521cae55b4f5ea375c88274ca42c4872 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
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23+3.16 EUR
30+2.43 EUR
47+1.53 EUR
50+1.44 EUR
125+1.42 EUR
250+1.39 EUR
Mindestbestellmenge: 23
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IRFP260NPBF IRFP260NPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACABFF1A6F5005056AB5A8F&compId=irfp260n.pdf?ci_sign=f3e8a7b27a58ae203b2eeadd5c846979cd6cf1ff Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 426 Stücke:
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13+5.58 EUR
17+4.4 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 13
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IRFP2907PBF IRFP2907PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E653ACACDF1A6F5005056AB5A8F&compId=irfp2907.pdf?ci_sign=4baf6082075992952a372b584b3f66e1a7437e61 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
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15+4.86 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 15
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IRF1407PBF IRF1407PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 156 Stücke:
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24+3.03 EUR
28+2.59 EUR
53+1.36 EUR
56+1.29 EUR
100+1.23 EUR
Mindestbestellmenge: 24
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IRF1407STRLPBF INFINEON TECHNOLOGIES infineon-irf1407spbf-ds-en.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IKP08N65H5XKSA1 IKP08N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPA08N80C3 SPA08N80C3 INFINEON TECHNOLOGIES INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 40W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
24+3.02 EUR
26+2.75 EUR
Mindestbestellmenge: 24
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SPP08N80C3 SPP08N80C3 INFINEON TECHNOLOGIES Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.37 EUR
25+2.96 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 22
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IKA10N65ET6XKSA2 IKA10N65ET6XKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 38
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IGB15N65S5ATMA1 IGB15N65S5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6450028E1820&compId=IGB15N65S5.pdf?ci_sign=dd7b19603f2615207670bc20e8bbe5e272f470ce Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 26ns
Turn-off time: 147ns
Power dissipation: 52.5W
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 IKB15N65EH5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59 Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IKP15N65H5XKSA1 IKP15N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Power dissipation: 105W
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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SPW20N60C3 SPW20N60C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C16093F72474A&compId=SPW20N60C3.pdf?ci_sign=afd7f24a2b3398c2d40ac67fa04a496e8428135d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.35 EUR
24+3 EUR
29+2.52 EUR
31+2.33 EUR
Mindestbestellmenge: 22
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BC857AE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1ED783DF60124ED30259&compId=BC857B-DTE.pdf?ci_sign=ba25cefced3e9fb3bec3567afbe372972cd47a0a
BC857AE6327
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1557 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1441+0.05 EUR
1557+0.046 EUR
Mindestbestellmenge: 1441
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IRF9Z34NPBF description pVersion=0046&contRep=ZT&docId=E1C04E5921B680F1A6F5005056AB5A8F&compId=irf9z34n.pdf?ci_sign=d4acb9fe5df062d3e293b8568a174e680d014d81
IRF9Z34NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -19A; 68W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -19A
Power dissipation: 68W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 23.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 523 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.34 EUR
67+1.08 EUR
91+0.79 EUR
159+0.45 EUR
174+0.41 EUR
Mindestbestellmenge: 54
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IKP15N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6BF0AC93A8A18&compId=IKP15N65F5.pdf?ci_sign=813dd2687d113f2ce86cd4f9b1d438357d641c10
IKP15N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Turn-on time: 24ns
Turn-off time: 166ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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IR2104PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1
IR2104PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -270...130mA
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 249 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.75 EUR
31+2.36 EUR
33+2.23 EUR
Mindestbestellmenge: 20
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IR2104SPBF description pVersion=0046&contRep=ZT&docId=E1C04E2EFD33E1F1A6F5005056AB5A8F&compId=ir2104.pdf?ci_sign=4359ee0159dafd1f6920f459f6db4eb8bb7e1e9d
IR2104SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
42+1.72 EUR
45+1.6 EUR
48+1.5 EUR
Mindestbestellmenge: 33
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IR2104STRPBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD865162496F5EA&compId=IR2104PBF.pdf?ci_sign=c171abf43ff720e30432806290c08be689b8dee1
IR2104STRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -270...130mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 680ns
Turn-off time: 150ns
auf Bestellung 1271 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
67+1.08 EUR
83+0.87 EUR
88+0.82 EUR
Mindestbestellmenge: 50
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IGB50N60TATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B31590A7878FA8&compId=IGB50N60T-DTE.pdf?ci_sign=60db27e8dc1b6cad47cbf90a3606a38d6dfebaed
IGB50N60TATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; D2PAK
Type of transistor: IGBT
Power dissipation: 333W
Case: D2PAK
Mounting: SMD
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGP50N60TXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B359F284B34FA8&compId=IGP50N60T-DTE.pdf?ci_sign=2b05383ced2cbae508f7c97aac42cd7ba476fbe1
IGP50N60TXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO220-3
Type of transistor: IGBT
Power dissipation: 333W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IGW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE69DD2658122D64FA8&compId=IGW50N60H3-DTE.pdf?ci_sign=897e7d7b1107c9d184468cce9d50b26eda5e5dbb
IGW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.65 EUR
22+3.26 EUR
24+3.07 EUR
30+2.97 EUR
Mindestbestellmenge: 16
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IGW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37718FAED8FA8&compId=IGW50N60T-DTE.pdf?ci_sign=8e9d2e131bdbda93bfe3ca4fb8f78e7815e61628
IGW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 64A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.22 EUR
17+4.23 EUR
18+3.99 EUR
30+3.85 EUR
Mindestbestellmenge: 14
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IKW50N60DTPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5CCBF5761D3D7&compId=IKW50N60DTP.pdf?ci_sign=94fc3287d74be6840256ba5010a252d8c5963f49
IKW50N60DTPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 61A; 159.6W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 61A
Power dissipation: 159.6W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 249nC
Kind of package: tube
Turn-on time: 50ns
Turn-off time: 233ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
32+2.25 EUR
34+2.12 EUR
Mindestbestellmenge: 23
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IKW50N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EE0CEE5938C0745&compId=IKW50N60H3.pdf?ci_sign=d334792eef4676a4984a2ca8adefbaef89e3863e
IKW50N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 167W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 167W
Case: TO247-3
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 297ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: H3
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
auf Bestellung 356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.71 EUR
19+3.93 EUR
20+3.72 EUR
Mindestbestellmenge: 13
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IKW50N60TFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B597008ABEE131BF&compId=IKW50N60T-dte.pdf?ci_sign=4bece27f1d2991d109d3770530589bb18075b091
IKW50N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Collector-emitter voltage: 600V
auf Bestellung 320 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.34 EUR
15+4.78 EUR
Mindestbestellmenge: 10
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AIKW50N60CTXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDA9B2D8CF93820&compId=AIKW50N60CT.pdf?ci_sign=b92086039af5d2b2a4bca0bef06f9bcd896bfdc7
AIKW50N60CTXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 333W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 333W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 328ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 50A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IKFW50N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9E65EA81B13D1&compId=IKFW50N60DH3E.pdf?ci_sign=9aec02af7ba15dd5f0fcbd322c4880e0cd8ecdd5
IKFW50N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 95W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 95W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 192ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 37A
Pulsed collector current: 120A
Collector-emitter voltage: 600V
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
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IKFW50N60ETXKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE1A560ED2F820&compId=IKFW50N60ET.pdf?ci_sign=1dc63477d7ea1d12e4dda3141dab1803566a6fe8
IKFW50N60ETXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 59A; 120W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 120W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 332ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 59A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 47A; Idm: 200A
Type of transistor: N-MOSFET
Technology: OptiMOS® -T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 47A
Pulsed drain current: 200A
Power dissipation: 71W
Case: PG-TO252-3-11
Gate-source voltage: ±16V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD50N06S4L12ATMA2 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA46AFD6105A143&compId=IPD50N06S4L12.pdf?ci_sign=c6c9560e346518f86140ea30fd599c19ca15cdc8
IPD50N06S4L12ATMA2
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 36A; 50W
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 50W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
auf Bestellung 1985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
55+1.3 EUR
82+0.88 EUR
89+0.81 EUR
91+0.79 EUR
94+0.77 EUR
100+0.74 EUR
Mindestbestellmenge: 55
Im Einkaufswagen  Stück im Wert von  UAH
IPD350N06LGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A3BAC2F9789B411C&compId=IPD350N06LG-DTE.pdf?ci_sign=87fae814c5bc9e76dd51c3647c62fa14ffec9864
IPD350N06LGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 116A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 116A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
auf Bestellung 203 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
75+0.96 EUR
146+0.49 EUR
154+0.46 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
IRF7313TRPBF description pVersion=0046&contRep=ZT&docId=E2219D76070127F1A303005056AB0C4F&compId=irf7313pbf.pdf?ci_sign=e7bd49b91212a50639a11cd438aa89f6c9fcf565
IRF7313TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 6.5A; 2W; SO8
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Case: SO8
Polarisation: unipolar
Power dissipation: 2W
Drain current: 6.5A
Drain-source voltage: 30V
auf Bestellung 3980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
86+0.84 EUR
204+0.35 EUR
215+0.33 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7341QTR pVersion=0046&contRep=ZT&docId=E1C0458E4D743AF1A6F5005056AB5A8F&compId=auirf7341q.pdf?ci_sign=6bea7d23124b569e130ea828412fdc252f1025d0
AUIRF7341QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 55V; 5.1A; 2.4W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 5.1A
Case: SO8
Mounting: SMD
Kind of channel: enhancement
On-state resistance: 65mΩ
Power dissipation: 2.4W
Gate charge: 29nC
Gate-source voltage: ±20V
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS84PWH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA928F8980DED1CC&compId=BSS84PWH6327XTSA1-dte.pdf?ci_sign=2d44725811f51a5fc8637fd959b8cb9ee3677c90
BSS84PWH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.15A; 0.3W; PG-SOT-323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.15A
Power dissipation: 0.3W
Case: PG-SOT-323
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: SIPMOS™
Gate charge: 0.37nC
auf Bestellung 5582 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
725+0.099 EUR
930+0.077 EUR
1027+0.07 EUR
1534+0.047 EUR
1624+0.044 EUR
Mindestbestellmenge: 500
Im Einkaufswagen  Stück im Wert von  UAH
IKW25N120H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4AFA32A35D1CC&compId=IKW25N120H3-DTE.pdf?ci_sign=a514e131da34fbe6b92466a983691a3367199936
IKW25N120H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 115nC
Collector current: 50A
Gate-emitter voltage: ±20V
Power dissipation: 326W
Pulsed collector current: 100A
Collector-emitter voltage: 1.2kV
Technology: TRENCHSTOP™ 3
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.33 EUR
17+4.36 EUR
18+4.13 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NPBF pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDAF9C48B972F760D4&compId=IRFZ44Npbf.pdf?ci_sign=a0367694f4d7ca96e6cad6a8227012049aa7c754
IRFZ44NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 83W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 83W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 2920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.39 EUR
63+1.14 EUR
78+0.92 EUR
191+0.38 EUR
202+0.35 EUR
Mindestbestellmenge: 52
Im Einkaufswagen  Stück im Wert von  UAH
IRFZ44NSTRLPBF pVersion=0046&contRep=ZT&docId=E221CA9332C586F1A303005056AB0C4F&compId=irfz44nspbf.pdf?ci_sign=3fb2237c544e3a8e905dcabfe68cc494319ca22b
IRFZ44NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 49A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE692B37B44CF164FA8&compId=IGW60N60H3-DTE.pdf?ci_sign=fb021fd10fc060d67c3fe8c683c021df2d088a5e
IGW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Manufacturer series: H3
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.85 EUR
12+6.29 EUR
13+5.95 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IKW60N60H3FKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF2CB8CEA107820&compId=IKW60N60H3.pdf?ci_sign=0a1ce94180d85bd783cd0fa622d1eaeca2db3871
IKW60N60H3FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 60A; 416W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Power dissipation: 416W
Case: TO247-3
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 314ns
Gate-emitter voltage: ±20V
Collector current: 60A
Pulsed collector current: 180A
Collector-emitter voltage: 600V
Manufacturer series: H3
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60DH3EXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE889B9F00A97F393D1&compId=IKFW60N60DH3E.pdf?ci_sign=66fa90d9f11cedce9cdc0e769fa76651b50686b7
IKFW60N60DH3EXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 44A; 104W; PG-TO247-3-AI
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 104W
Case: PG-TO247-3-AI
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Collector current: 44A
Pulsed collector current: 150A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKFW60N60EH3XKSA1 Infineon-IKFW60N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e787232af
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 50A; 164W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 164W
Case: TO247-3
Mounting: THT
Gate charge: 290nC
Kind of package: tube
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 64ns
Turn-off time: 253ns
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP9140NPBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C0AEF1A6F5005056AB5A8F&compId=irfp9140n.pdf?ci_sign=3ac34c20dff7ec6e6196f54516d588001a1d186d
IRFP9140NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 114 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.95 EUR
34+2.14 EUR
63+1.14 EUR
67+1.07 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NPBF pVersion=0046&contRep=ZT&docId=E1C04E47020E91F1A6F5005056AB5A8F&compId=irf640n.pdf?ci_sign=a9c4739e332ce1226d87e9114bce505a5c92ddab
IRF640NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 44.7nC
Kind of package: tube
auf Bestellung 2058 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
70+1.03 EUR
88+0.82 EUR
161+0.44 EUR
171+0.42 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
IRF640NSTRLPBF pVersion=0046&contRep=ZT&docId=E21F67C6956B2FF1A303005056AB0C4F&compId=irf640npbf.pdf?ci_sign=c65d3861a70faebe14223419d628e69e4794476e
IRF640NSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; 150W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Power dissipation: 150W
Case: D2PAK
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 1604 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
55+1.31 EUR
114+0.63 EUR
121+0.59 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
IRL540NPBF pVersion=0046&contRep=ZT&docId=E1C04E895D7E0CF1A6F5005056AB5A8F&compId=irl540n.pdf?ci_sign=fffe8e2f0bd2c3ceeafab0607703bfe148937036
IRL540NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 140W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±16V
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 49.3nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
auf Bestellung 2121 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.97 EUR
44+1.66 EUR
53+1.35 EUR
122+0.59 EUR
130+0.55 EUR
Mindestbestellmenge: 37
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4668PBF pVersion=0046&contRep=ZT&docId=E1C04E6B43C092F1A6F5005056AB5A8F&compId=irfp4668pbf.pdf?ci_sign=45a153989e46de31f118c0c4d47723eb943f959c
IRFP4668PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 130A; 520W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 130A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 9.7mΩ
Gate-source voltage: ±30V
Gate charge: 161nC
Technology: HEXFET®
Power dissipation: 520W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPD04N60C3ATMA1 Infineon-SPD_U04N60C3-DS-v02_06-en.pdf?fileId=db3a30433f12d084013f1a0318e31921
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; Idm: 13.5A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 13.5A
Power dissipation: 50W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPP24N60C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C338FC109074A&compId=SPP24N60C3.pdf?ci_sign=9b76c37c48399245f85e35d54b51d528dfd0f521
SPP24N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15.4A; 240W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15.4A
Power dissipation: 240W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSP373NH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698AF53C194611C&compId=BSP373NH6327-DTE.pdf?ci_sign=1be32fe62dee5c6145f94a436eb224a821e0b90f
BSP373NH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; 1.8W; SOT223
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Technology: OptiMOS™
On-state resistance: 0.24Ω
Drain current: 1.8A
Power dissipation: 1.8W
Gate-source voltage: ±20V
Case: SOT223
Drain-source voltage: 100V
Polarisation: unipolar
auf Bestellung 1920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
97+0.74 EUR
106+0.67 EUR
139+0.52 EUR
147+0.49 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710LPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7A9BF1A6F5005056AB5A8F&compId=irf3710.pdf?ci_sign=58420826307cbd2f57fbdcc4bdcc928b163a71e8
IRF3710PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.29 EUR
43+1.66 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
42+1.7 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF pVersion=0046&contRep=ZT&docId=E21F622D9B27ADF1A303005056AB0C4F&compId=irf3710spbf.pdf?ci_sign=4814b0e51e25decfe7691d9c359408b3b5fd0620
IRF3710STRRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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IRF3710ZPBF pVersion=0046&contRep=ZT&docId=E1C04E40FB7AA9F1A6F5005056AB5A8F&compId=irf3710z.pdf?ci_sign=f9d6d4f1059e7eaeb12e5a0e9cd515b090f6184f
IRF3710ZPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 82nC
Kind of package: tube
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
57+1.26 EUR
85+0.85 EUR
90+0.8 EUR
Mindestbestellmenge: 31
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IRF3710ZSTRLPBF pVersion=0046&contRep=ZT&docId=E21F625028A726F1A303005056AB0C4F&compId=irf3710zpbf.pdf?ci_sign=70754467c74fb0376ae6b25e3bd2dab2f3f80757
IRF3710ZSTRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
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AUIRF3710ZSTRL pVersion=0046&contRep=ZT&docId=E1C045883D5208F1A6F5005056AB5A8F&compId=auirf3710z.pdf?ci_sign=6c2c0c9f256e5a525498972404a7f2a1a6ec5bed
AUIRF3710ZSTRL
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP250MPBF pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAEBDC8FAB880E0C7&compId=irfp250mpbf.pdf?ci_sign=ce2f9fec1af75e4313268991e3189becda06ef59
IRFP250MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AD
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AD
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
26+2.85 EUR
29+2.55 EUR
53+1.34 EUR
Mindestbestellmenge: 22
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IRFP250NPBF description pVersion=0046&contRep=ZT&docId=E1C04E653ACAB8F1A6F5005056AB5A8F&compId=irfp250n.pdf?ci_sign=efbdd605b5da163688cfe68402cea5bf7e3f98b6
IRFP250NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 30A; 214W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 30A
Power dissipation: 214W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 661 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.65 EUR
28+2.6 EUR
64+1.13 EUR
67+1.07 EUR
Mindestbestellmenge: 20
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IRFP260MPBF pVersion=0046&contRep=ZT&docId=E221BEC03C8E98F1A303005056AB0C4F&compId=irfp260mpbf.pdf?ci_sign=4f4a731c521cae55b4f5ea375c88274ca42c4872
IRFP260MPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.16 EUR
30+2.43 EUR
47+1.53 EUR
50+1.44 EUR
125+1.42 EUR
250+1.39 EUR
Mindestbestellmenge: 23
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IRFP260NPBF pVersion=0046&contRep=ZT&docId=E1C04E653ACABFF1A6F5005056AB5A8F&compId=irfp260n.pdf?ci_sign=f3e8a7b27a58ae203b2eeadd5c846979cd6cf1ff
IRFP260NPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.58 EUR
17+4.4 EUR
48+1.5 EUR
51+1.42 EUR
Mindestbestellmenge: 13
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IRFP2907PBF pVersion=0046&contRep=ZT&docId=E1C04E653ACACDF1A6F5005056AB5A8F&compId=irfp2907.pdf?ci_sign=4baf6082075992952a372b584b3f66e1a7437e61
IRFP2907PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 209A; 330W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 209A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 410nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
25+2.95 EUR
26+2.79 EUR
Mindestbestellmenge: 15
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IRF1407PBF description pVersion=0046&contRep=ZT&docId=005056AB90B41EDBABB04EA951DD00C7&compId=irf1407pbf.pdf?ci_sign=d745832aa8dbbd733b93dbfdb32259059f0f1a39
IRF1407PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 130A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 130A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Gate charge: 160nC
auf Bestellung 156 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.03 EUR
28+2.59 EUR
53+1.36 EUR
56+1.29 EUR
100+1.23 EUR
Mindestbestellmenge: 24
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IRF1407STRLPBF infineon-irf1407spbf-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 70A; Idm: 520A; 200W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 70A
Pulsed drain current: 520A
Power dissipation: 200W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP08N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF4A5F4C2AA11CC&compId=IKP08N65H5-DTE.pdf?ci_sign=10d18d1a8c7b016c4dba2298e11ded404d5503e4
IKP08N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 70W; TO220-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 70W
Case: TO220-3
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 24A
Manufacturer series: H5
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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SPA08N80C3 INFN-S-A0004583436-1.pdf?t.download=true&u=5oefqw
SPA08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Technology: CoolMOS™
Case: PG-TO220-3-FP
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 0.65Ω
Drain current: 8A
Gate-source voltage: ±20V
Power dissipation: 40W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+3.02 EUR
26+2.75 EUR
Mindestbestellmenge: 24
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SPP08N80C3 Infineon-SPP08N80C3-DS-v02_91-en.pdf?fileId=db3a30432313ff5e0123a905a6005c8a
SPP08N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.37 EUR
25+2.96 EUR
28+2.56 EUR
30+2.42 EUR
Mindestbestellmenge: 22
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IKA10N65ET6XKSA2 pVersion=0046&contRep=ZT&docId=005056AB752F1EE895EFAAFFDA7933D6&compId=IKA10N65ET6.pdf?ci_sign=357318a9289c8383d9971a53bdf9a9a379462c13
IKA10N65ET6XKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 9A; 20W; TO220FP; T6
Type of transistor: IGBT
Technology: TRENCHSTOP™ 6
Power dissipation: 20W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 42.5A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Manufacturer series: T6
Gate charge: 27nC
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.93 EUR
41+1.77 EUR
49+1.47 EUR
52+1.39 EUR
Mindestbestellmenge: 38
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IGB15N65S5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDB6450028E1820&compId=IGB15N65S5.pdf?ci_sign=dd7b19603f2615207670bc20e8bbe5e272f470ce
IGB15N65S5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 23A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 26ns
Turn-off time: 147ns
Power dissipation: 52.5W
Collector current: 23A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Produkt ist nicht verfügbar
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IKB15N65EH5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDD4741CB2AD820&compId=IKB15N65EH5.pdf?ci_sign=f41aca0c31e21ad8910ab653a5cd8be8dccade59
IKB15N65EH5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 18A; 52.5W; D2PAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Gate charge: 38nC
Turn-on time: 33ns
Turn-off time: 172ns
Power dissipation: 52.5W
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP15N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED685BDA57DFD7A71BF&compId=IKP15N65H5-DTE.pdf?ci_sign=a152a4dcb39347c0c777a80d3988833d2f0dbb62
IKP15N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 105W; TO220-3; H5
Type of transistor: IGBT
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 38nC
Power dissipation: 105W
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPW20N60C3 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A58C16093F72474A&compId=SPW20N60C3.pdf?ci_sign=afd7f24a2b3398c2d40ac67fa04a496e8428135d
SPW20N60C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.1A; 208W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.1A
Power dissipation: 208W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.35 EUR
24+3 EUR
29+2.52 EUR
31+2.33 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
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