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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
135+0.53 EUR
Mindestbestellmenge: 100
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IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDFD0C09EFF1A303005056AB0C4F&compId=irfl4315pbf.pdf?ci_sign=8964934cac05ad8809fafbd0c19edf4cb7c5ebfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.06 EUR
Mindestbestellmenge: 1000
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.96 EUR
Mindestbestellmenge: 1000
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BCX5316H6327XTSA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
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1000+0.17 EUR
Mindestbestellmenge: 1000
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BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Interface: SPI
Kind of package: reel; tape
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 210mA
Number of receivers: 2
Number of transmitters: 1
Supply voltage: 3.135...3.465V DC
Noise Figure: 12dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
Kind of integrated circuit: MMIC; RF transceiver
auf Bestellung 475 Stücke:
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7+10.75 EUR
Mindestbestellmenge: 7
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BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4556AB1BDE28&compId=BGT24MTR11.pdf?ci_sign=2900f01eb0e229bf469f90085a5e772ee396b392 Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Mounting: SMD
Interface: SPI
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 150mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.135...3.465V DC
Noise Figure: 12dB
Open-loop gain: 26dB
Frequency: 24...26GHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
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CY7C1011DV33-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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IDW20G120C5BFKSA1 IDW20G120C5BFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBADCC38FBBEFA8&compId=IDW20G120C5B-DTE.pdf?ci_sign=04ecd26329ddad1567e3bca1198215120340dc7c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Leakage current: 12µA
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Power dissipation: 250W
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
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CY8C29666-24PVXI CY8C29666-24PVXI INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD09FFAE3E80C4&compId=CY8C29466-24PVXI.pdf?ci_sign=eeae5e27e6ca667aaa9f9c39f527ba37400f5a52 Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Interface: GPIO; I2C; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Clock frequency: 24MHz
Kind of core: 8-bit
auf Bestellung 30 Stücke:
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3+26.51 EUR
10+24.58 EUR
30+23.42 EUR
Mindestbestellmenge: 3
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BTS3205NHUSA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS3205NHUMA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS5030-2EKA BTS5030-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI-NPbF
Mounting: SMD
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - Unclassified
Description: OPTOISOLATOR 2CH 2.5KV HIGH-VOLT SMD-8
auf Bestellung 890 Stücke:
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50+8.08 EUR
Mindestbestellmenge: 50
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IPF013N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF013N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12e8996b03 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: StrongIRFET™ 2
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.35mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 231W
Drain current: 239A
Case: D2PAK-7
Pulsed drain current: 956A
Kind of channel: enhancement
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IQE013N04LM6ATMA1 INFINEON TECHNOLOGIES Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.43 EUR
Mindestbestellmenge: 5000
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE88A39EAC5820&compId=IKW30N65ES5.pdf?ci_sign=3c20a4d6d2a4a6234dfd9d5cb8e68d9172ce375c Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 29ns
Turn-off time: 154ns
auf Bestellung 36 Stücke:
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16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Technology: TRENCHSTOP™ 5
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4+17.88 EUR
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
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CY7C1471BV25-133AXI INFINEON TECHNOLOGIES ?docID=49452 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPP040N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.87 EUR
Mindestbestellmenge: 100
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IRLS4030TRLPBF IRLS4030TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS5012SDAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.14 EUR
Mindestbestellmenge: 2500
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BTS50121EKBXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.86 EUR
Mindestbestellmenge: 2500
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
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CY8C29466-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+16.92 EUR
Mindestbestellmenge: 1000
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IPW90R340C3XKSA1 INFINEON TECHNOLOGIES Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
30+4.42 EUR
120+3.98 EUR
Mindestbestellmenge: 30
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BSB104N08NP3GXUSA1 BSB104N08NP3GXUSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IPP034N08N5AKSA1 IPP034N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB024N08N5ATMA1 IPB024N08N5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB054N08N3GATMA1 IPB054N08N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAD8376444C11C&compId=IPB054N08N3G-DTE.pdf?ci_sign=a97463763342bf8843fb520d4a928c6f3f3b933a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 150W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IAUC64N08S5L075ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 11.1mΩ
Power dissipation: 75W
Drain current: 13A
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IPP024N08NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 182A; 214W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Drain current: 182A
Gate-source voltage: 20V
Drain-source voltage: 80V
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.52 EUR
Mindestbestellmenge: 50
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DD540N26K DD540N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE840E2733F00C7&compId=DD540N2xK.pdf?ci_sign=ab7d59d45e6f4161ee38774443bc27633fd17567 Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DZ540N22K DZ540N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9D0A5D069C469&compId=DZ540N22K.pdf?ci_sign=8c3ad01c6faae600eb36f97b444d92b787a7d1aa Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Semiconductor structure: single diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DZ540N26K DZ540N26K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6AD62BD33C469&compId=DZ540N26K.pdf?ci_sign=de8f37489a18e39211aff5074db5f32f3ac4415d Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: single diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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SPD09P06PLGBTMA1 SPD09P06PLGBTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Kind of channel: enhancement
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 42W
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
75+0.96 EUR
84+0.86 EUR
111+0.64 EUR
Mindestbestellmenge: 65
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES infineon-idwd30g120c5-datasheet-en.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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FF300R17ME4BOSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Case: AG-ECONOD-3
Produkt ist nicht verfügbar
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S29GL256S10FHI020 INFINEON TECHNOLOGIES S29GL_128S_01GS_00.pdf Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
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BCR198E6327HTSA1 INFINEON TECHNOLOGIES bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.048 EUR
Mindestbestellmenge: 3000
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IRF7480MTRPBF INFINEON TECHNOLOGIES irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL7486MTRPBF INFINEON TECHNOLOGIES IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRF6668TRPBF IRF6668TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
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IRF6613TRPBF IRF6613TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
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AUIRF7640S2TR AUIRF7640S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
Produkt ist nicht verfügbar
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AUIRF7647S2TR AUIRF7647S2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Produkt ist nicht verfügbar
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AUIRF7648M2TR AUIRF7648M2TR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Produkt ist nicht verfügbar
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IRFL4105TRPBF pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
135+0.53 EUR
Mindestbestellmenge: 100
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IRFL4315TRPBF pVersion=0046&contRep=ZT&docId=E221BDFD0C09EFF1A303005056AB0C4F&compId=irfl4315pbf.pdf?ci_sign=8964934cac05ad8809fafbd0c19edf4cb7c5ebfa
IRFL4315TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
auf Bestellung 478 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB180N10S402ATMA1 Infineon-IPB180N10S4_02-DS-v01_00-en.pdf?fileId=db3a30433d1d0bbe013d2129cf8a2f88
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 180A; 300W; TO263-7; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: TO263-7
Gate-source voltage: 20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 156nC
Kind of channel: enhancement
Application: automotive industry
Electrical mounting: SMT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.06 EUR
Mindestbestellmenge: 1000
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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BGT24MTR12E6327XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4A23BA301E28&compId=BGT24MTR12.pdf?ci_sign=f624d640ac2e865a0dc9b9642ef785ba696a0b44
BGT24MTR12E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Interface: SPI
Kind of package: reel; tape
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
DC supply current: 210mA
Number of receivers: 2
Number of transmitters: 1
Supply voltage: 3.135...3.465V DC
Noise Figure: 12dB
Open-loop gain: 26dB
Frequency: 24...24.25GHz
Kind of integrated circuit: MMIC; RF transceiver
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.75 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BGT24MTR11E6327XUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9DD4556AB1BDE28&compId=BGT24MTR11.pdf?ci_sign=2900f01eb0e229bf469f90085a5e772ee396b392
BGT24MTR11E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Mounting: SMD
Interface: SPI
Case: VQFN32
Operating temperature: -40...105°C
DC supply current: 150mA
Number of transmitters: 1
Number of receivers: 1
Supply voltage: 3.135...3.465V DC
Noise Figure: 12dB
Open-loop gain: 26dB
Frequency: 24...26GHz
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011DV33-10BVXI Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011G30-12ZSXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011G30-12ZSXET download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011DV33-10BVXIT Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011DV33-10ZSXIT Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDW20G120C5BFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBADCC38FBBEFA8&compId=IDW20G120C5B-DTE.pdf?ci_sign=04ecd26329ddad1567e3bca1198215120340dc7c
IDW20G120C5BFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Leakage current: 12µA
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Power dissipation: 250W
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
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CY8C29666-24PVXI pVersion=0046&contRep=ZT&docId=005056AB90B41EDA80AD09FFAE3E80C4&compId=CY8C29466-24PVXI.pdf?ci_sign=eeae5e27e6ca667aaa9f9c39f527ba37400f5a52
CY8C29666-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Interface: GPIO; I2C; SPI; UART
Type of integrated circuit: PSoC microcontroller
Case: SSOP48
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Clock frequency: 24MHz
Kind of core: 8-bit
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.51 EUR
10+24.58 EUR
30+23.42 EUR
Mindestbestellmenge: 3
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BTS3205NHUSA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS3205NHUMA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5030-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c
BTS5030-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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PVI1050NSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI-NPbF
Mounting: SMD
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBFHLLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - Unclassified
Description: OPTOISOLATOR 2CH 2.5KV HIGH-VOLT SMD-8
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.08 EUR
Mindestbestellmenge: 50
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IPF013N04NF2SATMA1 Infineon-IPF013N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12e8996b03
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: StrongIRFET™ 2
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.35mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 231W
Drain current: 239A
Case: D2PAK-7
Pulsed drain current: 956A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.43 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE88A39EAC5820&compId=IKW30N65ES5.pdf?ci_sign=3c20a4d6d2a4a6234dfd9d5cb8e68d9172ce375c
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 39.5A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: TRENCHSTOP™ 5
Turn-on time: 29ns
Turn-off time: 154ns
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC5F600351953D7&compId=IKW30N65WR5.pdf?ci_sign=fca82b64ffb71e83afcb941304821656608b4787
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 30A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Technology: TRENCHSTOP™ 5
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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IHW30N65R5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BC65625A78A73D7&compId=IHW30N65R5.pdf?ci_sign=7f03a628084c42f7eb5565be268fbe684ca2dcbe
IHW30N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C6EBA99D05EA18&compId=ikw30n65h5.pdf?ci_sign=ef4af8313a33a24ffc5ddf2605e51512f85de775
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5ABF45F1EF19DB1CC&compId=IGP30N65F5-DTE.pdf?ci_sign=d5808c516fe5b312f9544fcad07701861f873cea
IGP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EDE50433F363820&compId=IKP30N65F5.pdf?ci_sign=fa3d1b47c8af8e134f5a323bdc4d3df0efadea7d
IKP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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CY7C1471BV25-133AXI ?docID=49452
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.87 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IRLS4030TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151
IRLS4030TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS5012SDAAUMA1 Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.86 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CY8C29466-24PVXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+16.92 EUR
Mindestbestellmenge: 1000
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IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.42 EUR
120+3.98 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BSB104N08NP3GXUSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794
BSB104N08NP3GXUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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IPP034N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BB1121F18CC11C&compId=IPP034N08N5-DTE.pdf?ci_sign=1dda73ae20d4521fd3f3e2996dc6f9936161321f
IPP034N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 167W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 167W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB024N08N5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA8C0E6BD0011C&compId=IPB024N08N5-dte.pdf?ci_sign=49f9c54818950a9a239eac3f0159014c59fedaf1
IPB024N08N5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
On-state resistance: 2.4mΩ
Power dissipation: 375W
Gate-source voltage: ±20V
Case: PG-TO263-3
Kind of channel: enhancement
Mounting: SMD
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB054N08N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAD8376444C11C&compId=IPB054N08N3G-DTE.pdf?ci_sign=a97463763342bf8843fb520d4a928c6f3f3b933a
IPB054N08N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 150W; PG-TO263-3
Case: PG-TO263-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 5.4mΩ
Power dissipation: 150W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC64N08S5L075ATMA1 Infineon-IAUC64N08S5L075-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd40f74020b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 13A; Idm: 256A; 75W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 37nC
On-state resistance: 11.1mΩ
Power dissipation: 75W
Drain current: 13A
Pulsed drain current: 256A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP024N08NF2SAKMA1 Infineon-IPP024N08NF2S-DataSheet-v02_00-EN.pdf?fileId=5546d46276c4f5350176f70288ae1698
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 80V; 182A; 214W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Technology: MOSFET
Type of transistor: N-MOSFET
Mounting: THT
Gate charge: 89nC
On-state resistance: 2.4mΩ
Power dissipation: 214W
Drain current: 182A
Gate-source voltage: 20V
Drain-source voltage: 80V
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.52 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
DD540N26K pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBEE840E2733F00C7&compId=DD540N2xK.pdf?ci_sign=ab7d59d45e6f4161ee38774443bc27633fd17567
DD540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.6kV; If: 540A; BG-PB60AT-1; screw
Case: BG-PB60AT-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.48V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: double series
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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DZ540N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9D0A5D069C469&compId=DZ540N22K.pdf?ci_sign=8c3ad01c6faae600eb36f97b444d92b787a7d1aa
DZ540N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.78V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.2kV
Semiconductor structure: single diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ540N26K pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6AD62BD33C469&compId=DZ540N26K.pdf?ci_sign=de8f37489a18e39211aff5074db5f32f3ac4415d
DZ540N26K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 540A; BG-PB501-1; screw
Case: BG-PB501-1
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.64V
Max. forward impulse current: 16.5kA
Load current: 540A
Max. off-state voltage: 2.6kV
Semiconductor structure: single diode
Type of semiconductor module: diode
Produkt ist nicht verfügbar
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SPD09P06PLGBTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92C871EC1151CC&compId=SPD09P06PLGBTMA1-DTE.pdf?ci_sign=159e1dd4d16b5783d745104ea92eb75c1c742566
SPD09P06PLGBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -9.7A; 42W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -9.7A
Kind of channel: enhancement
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 42W
auf Bestellung 1738 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
75+0.96 EUR
84+0.86 EUR
111+0.64 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
IDWD30G120C5XKSA1 infineon-idwd30g120c5-datasheet-en.pdf
IDWD30G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Produkt ist nicht verfügbar
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FF300R17ME4BOSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89D8A8BDE17AC13D7&compId=FF300R17ME4.pdf?ci_sign=3165dc23580ded91f906ca73de1a5b015a0a9dcf
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Technology: EconoDUAL™ 3
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.7kV
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.8kW
Case: AG-ECONOD-3
Produkt ist nicht verfügbar
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S29GL256S10FHI020 S29GL_128S_01GS_00.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 256MbFLASH; CFI,parallel; 100ns; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 100ns
Case: BGA64
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR198E6327HTSA1 bcr198series.pdf?folderId=db3a30431f848401011fcbf2ab4c04c4&fileId=db3a304320d39d590121e8552c2f65bb
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.048 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
IRF7480MTRPBF irf7480m.pdf?fileId=5546d462533600a4015355ff8fa41c30
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 330A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 330A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL7486MTRPBF IRSD-S-A0001076320-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 209A; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 209A
Case: DirectFET
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6668TRPBF pVersion=0046&contRep=ZT&docId=E21F6E04AA9E5EF1A303005056AB0C4F&compId=irf6668pbf.pdf?ci_sign=3d071b1127b1dfff4ca1aec60de8486f5a4ff2d4
IRF6668TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 55A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
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IRF6613TRPBF pVersion=0046&contRep=ZT&docId=E21F68802DD922F1A303005056AB0C4F&compId=irf6613pbf.pdf?ci_sign=22b184a7d9530b239b01848c8503885fd8923f04
IRF6613TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 23A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 23A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6648TRPBF pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 89W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7640S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D7480F1A6F5005056AB5A8F&compId=auirf7640s2.pdf?ci_sign=d080479f8227fc8010aaf755fcbe73634e14b94a
AUIRF7640S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; 30W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 30W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7647S2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D748EF1A6F5005056AB5A8F&compId=auirf7647s2.pdf?ci_sign=a5ade660db264cb9e00cb8ccb2dffd04e4723d6b
AUIRF7647S2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; 41W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 41W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF7648M2TR pVersion=0046&contRep=ZT&docId=E1C0458E4D749CF1A6F5005056AB5A8F&compId=auirf7648m2.pdf?ci_sign=ebc60ccc8adf31a6563568cfeee5902d69161772
AUIRF7648M2TR
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; 63W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 63W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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