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ISP452 ISP452 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989BFA79C82469&compId=ISP452.pdf?ci_sign=2061c4713e40e04fd5df07147ea159759c248e13 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 207 Stücke:
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34+2.14 EUR
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BCX5216H6327XTSA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 2000 Stücke:
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1000+0.2 EUR
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BCX5216H6433XTMA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 35 Stücke:
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35+2.04 EUR
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BSP752T BSP752T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BSP752TXUMA1 INFINEON TECHNOLOGIES Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BTS118D BTS118D INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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BSZ520N15NS3GATMA1 BSZ520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC520N15NS3GATMA1 BSC520N15NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6561A525011C&compId=BSC520N15NS3G-DTE.pdf?ci_sign=fb4d680c37f940e2565f9ae51fea56efe2625137 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB060N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 136A; 250W; TO263-7; SMT
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Kind of channel: enhancement
Gate-source voltage: 20V
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.7 EUR
Mindestbestellmenge: 1000
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XC8868FFI5VACFXUMA1 XC8868FFI5VACFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731 Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IRF9335TRPBF IRF9335TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AFCB3374F8F1A303005056AB0C4F&compId=irf9335pbf.pdf?ci_sign=75a5ae7da5bf91ec152bd1ed019fa68e31a48696 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
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IRF9358TRPBF IRF9358TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221AFE6B19E50F1A303005056AB0C4F&compId=irf9358pbf.pdf?ci_sign=2603984b04ac0777b4f4d8423a7f0c4913626159 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IRF9362TRPBF IRF9362TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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DD160N22K DD160N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
1+269.3 EUR
3+225.25 EUR
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BSP772T BSP772T INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1287 Stücke:
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18+4.2 EUR
25+2.87 EUR
100+2.27 EUR
250+2.04 EUR
Mindestbestellmenge: 18
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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Application: telecommunication
Case: TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Number of channels: 4
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
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ISO1H811GAUMA1 ISO1H811GAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE79487AD8711E72747&compId=ISO1H811G.pdf?ci_sign=6af05765db5015ce017c9f66200429b3118e9db0 Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
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CY7C2245KV18-450BZXI INFINEON TECHNOLOGIES Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
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IPD80R2K0P7ATMA1 IPD80R2K0P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Technology: CoolMOS™ P7
Version: ESD
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
83+0.87 EUR
95+0.75 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 66
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DD260N16K DD260N16K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
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100+0.72 EUR
135+0.53 EUR
Mindestbestellmenge: 100
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IRFL4315TRPBF IRFL4315TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BDFD0C09EFF1A303005056AB0C4F&compId=irfl4315pbf.pdf?ci_sign=8964934cac05ad8809fafbd0c19edf4cb7c5ebfa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPI180N10N3GXKSA1 IPI180N10N3GXKSA1 INFINEON TECHNOLOGIES IPI180N10N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 476 Stücke:
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49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
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IAUA180N10S5N029AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB024N10N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+2.96 EUR
Mindestbestellmenge: 1000
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BCX5316H6327XTSA1 INFINEON TECHNOLOGIES infineon-bcx51-bcx52-bcx53-ds-en.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
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1000+0.17 EUR
Mindestbestellmenge: 1000
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BGT24MTR12E6327XUMA1 BGT24MTR12E6327XUMA1 INFINEON TECHNOLOGIES BGT24MTR12.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.81 EUR
Mindestbestellmenge: 7
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BGT24MTR11E6327XUMA1 BGT24MTR11E6327XUMA1 INFINEON TECHNOLOGIES BGT24MTR11.pdf Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXE INFINEON TECHNOLOGIES Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXET INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXIT INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011DV33-10ZSXIT INFINEON TECHNOLOGIES Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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IDW20G120C5BFKSA1 IDW20G120C5BFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBADCC38FBBEFA8&compId=IDW20G120C5B-DTE.pdf?ci_sign=04ecd26329ddad1567e3bca1198215120340dc7c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Leakage current: 12µA
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Power dissipation: 250W
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
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CY8C29666-24PVXI CY8C29666-24PVXI INFINEON TECHNOLOGIES CY8C29466-24PVXI.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Kind of core: 8-bit
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Case: SSOP48
Type of integrated circuit: PSoC microcontroller
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
3+26.51 EUR
10+24.58 EUR
30+23.42 EUR
Mindestbestellmenge: 3
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BTS3205NHUSA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS3205NHUMA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS5030-2EKA BTS5030-2EKA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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PVI1050NSPBF PVI1050NSPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI-NPbF
Mounting: SMD
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 INFINEON TECHNOLOGIES Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Category: Optocouplers - Unclassified
Description: OPTOISOLATOR 2CH 2.5KV HIGH-VOLT SMD-8
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
50+8.08 EUR
Mindestbestellmenge: 50
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IPF013N04NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPF013N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12e8996b03 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: StrongIRFET™ 2
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.35mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 231W
Drain current: 239A
Case: D2PAK-7
Pulsed drain current: 956A
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IQE013N04LM6ATMA1 INFINEON TECHNOLOGIES Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+1.43 EUR
Mindestbestellmenge: 5000
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IKW30N65ES5XKSA1 IKW30N65ES5XKSA1 INFINEON TECHNOLOGIES IKW30N65ES5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
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IKW30N65WR5XKSA1 IKW30N65WR5XKSA1 INFINEON TECHNOLOGIES IKW30N65WR5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
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IHW30N65R5XKSA1 IHW30N65R5XKSA1 INFINEON TECHNOLOGIES IHW30N65R5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IKW30N65H5XKSA1 IKW30N65H5XKSA1 INFINEON TECHNOLOGIES ikw30n65h5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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IGP30N65F5XKSA1 IGP30N65F5XKSA1 INFINEON TECHNOLOGIES IGP30N65F5-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 IGW30N65L5XKSA1 INFINEON TECHNOLOGIES Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
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IKP30N65F5XKSA1 IKP30N65F5XKSA1 INFINEON TECHNOLOGIES IKP30N65F5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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CY7C1471BV25-133AXI INFINEON TECHNOLOGIES ?docID=49452 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPP040N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.87 EUR
Mindestbestellmenge: 100
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IRLS4030TRLPBF IRLS4030TRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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BTS5012SDAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+2.14 EUR
Mindestbestellmenge: 2500
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BTS50121EKBXUMA1 INFINEON TECHNOLOGIES Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+1.86 EUR
Mindestbestellmenge: 2500
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IPP020N08N5AKSA1 IPP020N08N5AKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
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CY8C29466-24PVXIT INFINEON TECHNOLOGIES Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+16.92 EUR
Mindestbestellmenge: 1000
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IPW90R340C3XKSA1 INFINEON TECHNOLOGIES Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
30+4.42 EUR
120+3.98 EUR
Mindestbestellmenge: 30
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BSB104N08NP3GXUSA1 BSB104N08NP3GXUSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
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ISP452 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586989BFA79C82469&compId=ISP452.pdf?ci_sign=2061c4713e40e04fd5df07147ea159759c248e13
ISP452
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.7A
Mounting: SMD
Number of channels: 1
Case: SOT223-3
Supply voltage: 5...34V DC
On-state resistance: 0.16Ω
Technology: Industrial PROFET
Kind of output: N-Channel
auf Bestellung 207 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
Mindestbestellmenge: 34
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BCX5216H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.2 EUR
Mindestbestellmenge: 1000
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BCX5216H6433XTMA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4000+0.17 EUR
Mindestbestellmenge: 4000
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IRF9389TRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDC9C6E07FC35EA&compId=IRF9389TRPBF.pdf?ci_sign=ea3b1216efc13bc500124d935d1fdf6b8d441c11
IRF9389TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
BSP752T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697A892C9B98469&compId=BSP752T.pdf?ci_sign=b5ced3c5ed460144b067c1a56ab54b4b2531568d
BSP752T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BSP752TXUMA1 Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.15Ω
Technology: Classic PROFET
Output voltage: 52V
Produkt ist nicht verfügbar
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BTS118D pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF4787C35DE4745&compId=BTS118D.pdf?ci_sign=9b9db2d4e2b7ee7d791f6da8d36a09917897c1ff
BTS118D
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; N-Channel; SMD; TO252-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.4A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-3
On-state resistance: 0.1Ω
Technology: HITFET®
Output voltage: 42V
Power dissipation: 21W
Produkt ist nicht verfügbar
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BSZ520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC3ECE7EAA411C&compId=BSZ520N15NS3G-DTE.pdf?ci_sign=4334bb1e8d31b9ce8d1cb4da0d0f9340350c816c
BSZ520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSC520N15NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6561A525011C&compId=BSC520N15NS3G-DTE.pdf?ci_sign=fb4d680c37f940e2565f9ae51fea56efe2625137
BSC520N15NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 57W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 21A
Power dissipation: 57W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 52mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB060N15N5ATMA1 Infineon-IPB060N15N5-DS-v02_00-EN.pdf?fileId=5546d4625b3ca4ec015b5ca333d3364d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 150V; 136A; 250W; TO263-7; SMT
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Electrical mounting: SMT
Kind of channel: enhancement
Gate-source voltage: 20V
Gate charge: 68nC
On-state resistance: 4.8mΩ
Drain current: 136A
Power dissipation: 250W
Drain-source voltage: 150V
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.7 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
XC8868FFI5VACFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BBD6C16D8DC79E28&compId=XC88X-DTE.pdf?ci_sign=d050d2878a88789e7d06e3553657479f565ee731
XC8868FFI5VACFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Mounting: SMD
Type of integrated circuit: microcontroller 8051
Case: PG-TQFP-48
Interface: SPI; UART x2
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Number of output compare channels: 1
Number of input capture channels: 1
Supply voltage: 3...5V DC
Number of 16bit timers: 4
Number of PWM channels: 4
Number of 10bit A/D converters: 8
Memory: 1.75kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 8-bit
Produkt ist nicht verfügbar
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IRF9335TRPBF pVersion=0046&contRep=ZT&docId=E221AFCB3374F8F1A303005056AB0C4F&compId=irf9335pbf.pdf?ci_sign=75a5ae7da5bf91ec152bd1ed019fa68e31a48696
IRF9335TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.4A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.4A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9358TRPBF pVersion=0046&contRep=ZT&docId=E221AFE6B19E50F1A303005056AB0C4F&compId=irf9358pbf.pdf?ci_sign=2603984b04ac0777b4f4d8423a7f0c4913626159
IRF9358TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9.2A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -9.2A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF9362TRPBF pVersion=0046&contRep=ZT&docId=E221B00322F7EAF1A303005056AB0C4F&compId=irf9362pbf.pdf?ci_sign=daec17103d69b620a36fa31b8c45e333a8f32cd4
IRF9362TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; 2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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CY7C1480BV33-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD160N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f
DD160N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 160A
Max. forward impulse current: 4.6kA
Max. off-state voltage: 2.2kV
Semiconductor structure: double series
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+269.3 EUR
3+225.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BSP772T pVersion=0046&contRep=ZT&docId=005056AB752F1EE58697ACDC9066A469&compId=BSP772T.pdf?ci_sign=30fabbcc8cb7dfd515be88603b5898f2678b306f
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1287 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.2 EUR
25+2.87 EUR
100+2.27 EUR
250+2.04 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Application: telecommunication
Case: TSNP10
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Number of channels: 4
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Produkt ist nicht verfügbar
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ISO1H811GAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE79487AD8711E72747&compId=ISO1H811G.pdf?ci_sign=6af05765db5015ce017c9f66200429b3118e9db0
ISO1H811GAUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: driver; high-side; ISOFACE™; PG-DSO-36; 625mA; Ch: 8; 11÷35VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side
Technology: ISOFACE™
Case: PG-DSO-36
Output current: 0.625A
Number of channels: 8
Supply voltage: 11...35V DC
Integrated circuit features: 8bit interface; galvanically isolated
Mounting: SMD
On-state resistance: 0.15Ω
Operating temperature: -25...125°C
Kind of package: reel; tape
Kind of output: N-Channel
Turn-on time: 64µs
Turn-off time: 89µs
Power dissipation: 3.3W
Produkt ist nicht verfügbar
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CY7C2245KV18-450BZXI Infineon-CY7C2245KV18-450BZXI-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2b7a837b0
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.7...1.9V DC
Frequency: 450MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD80R2K0P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA500A0526CE143&compId=IPD80R2K0P7.pdf?ci_sign=c53a33955b5e634b291666a18a0dfbe567e6a0d1
IPD80R2K0P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.9A; 24W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.9A
Power dissipation: 24W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 9nC
Technology: CoolMOS™ P7
Version: ESD
auf Bestellung 1462 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
83+0.87 EUR
95+0.75 EUR
107+0.67 EUR
114+0.63 EUR
Mindestbestellmenge: 66
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DD260N16K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586CA08F9313D8469&compId=DD260N18K.pdf?ci_sign=1a3eeda9b19c3aa4315259af2d268dad7a8056c1
DD260N16K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 260A; BG-PB50-1; screw
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 260A
Case: BG-PB50-1
Max. forward voltage: 1.32V
Max. forward impulse current: 9.5kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IRFL4105TRPBF pVersion=0046&contRep=ZT&docId=E221BDC8CA1D8FF1A303005056AB0C4F&compId=irfl4105pbf.pdf?ci_sign=d9a4fd47158d122281f0b3beebd5ed2729db0339
IRFL4105TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 3.7A
Power dissipation: 2.1W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
135+0.53 EUR
Mindestbestellmenge: 100
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IRFL4315TRPBF pVersion=0046&contRep=ZT&docId=E221BDFD0C09EFF1A303005056AB0C4F&compId=irfl4315pbf.pdf?ci_sign=8964934cac05ad8809fafbd0c19edf4cb7c5ebfa
IRFL4315TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 2.6A; 2.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.6A
Power dissipation: 2.8W
Case: SOT223
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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IPI180N10N3GXKSA1 IPI180N10N3G-DTE.pdf
IPI180N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; 71W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Power dissipation: 71W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
56+1.29 EUR
70+1.03 EUR
250+0.9 EUR
Mindestbestellmenge: 49
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IAUA180N10S5N029AUMA1 Infineon-IAUA180N10S5N029-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39b1380b38
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 561A; 221W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 561A
Power dissipation: 221W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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IPB024N10N5ATMA1 Infineon-IPB024N10N5-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf0159ef08d94417f4
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+2.96 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
BCX5316H6327XTSA1 infineon-bcx51-bcx52-bcx53-ds-en.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 2W; SOT89; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 2W
Case: SOT89
Current gain: 25
Mounting: SMD
Frequency: 125MHz
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.17 EUR
Mindestbestellmenge: 1000
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BGT24MTR12E6327XUMA1 BGT24MTR12.pdf
BGT24MTR12E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...24.25GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 210mA
Number of receivers: 2
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.81 EUR
Mindestbestellmenge: 7
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BGT24MTR11E6327XUMA1 BGT24MTR11.pdf
BGT24MTR11E6327XUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: interface; MMIC,RF transceiver; SPI; VQFN32; -40÷105°C
Type of integrated circuit: interface
Kind of integrated circuit: MMIC; RF transceiver
Interface: SPI
Case: VQFN32
Mounting: SMD
Operating temperature: -40...105°C
Frequency: 24...26GHz
Kind of package: reel; tape
Supply voltage: 3.135...3.465V DC
DC supply current: 150mA
Number of receivers: 1
Open-loop gain: 26dB
Number of transmitters: 1
Noise Figure: 12dB
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXI Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXE Infineon-CY7C1011G_AUTOMOTIVE_2_MBIT_(128K_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7727c5896
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011G30-12ZSXET download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 12ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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CY7C1011DV33-10BVXIT Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1011DV33-10ZSXIT Infineon-CY7C1011DV33_2-Mbit_(128_K_16)_Static_RAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e6f737e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 128kx16bit; 10ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 128kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 3...3.6V DC
Produkt ist nicht verfügbar
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IDW20G120C5BFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBADCC38FBBEFA8&compId=IDW20G120C5B-DTE.pdf?ci_sign=04ecd26329ddad1567e3bca1198215120340dc7c
IDW20G120C5BFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; PG-TO247-3
Case: PG-TO247-3
Mounting: THT
Leakage current: 12µA
Max. forward voltage: 1.4V
Load current: 10A x2
Max. forward impulse current: 180A
Semiconductor structure: common cathode; double
Power dissipation: 250W
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Kind of package: tube
Produkt ist nicht verfügbar
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CY8C29666-24PVXI CY8C29466-24PVXI.pdf
CY8C29666-24PVXI
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP48; 3÷5.25VDC; Core: 8-bit
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 3...5.25V DC
Number of inputs/outputs: 44
Memory: 2kB SRAM; 32kB FLASH; 512kB SRAM
Kind of core: 8-bit
Clock frequency: 24MHz
Interface: GPIO; I2C; SPI; UART
Case: SSOP48
Type of integrated circuit: PSoC microcontroller
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+26.51 EUR
10+24.58 EUR
30+23.42 EUR
Mindestbestellmenge: 3
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BTS3205NHUSA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS3205NHUMA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
Produkt ist nicht verfügbar
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BTS5030-2EKA pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE4F48132938259&compId=BTS5030-2EKA.pdf?ci_sign=33e059d647c96a6ae9b9d65e9205d4cc4a8f0d7c
BTS5030-2EKA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 4A; Ch: 2; N-Channel; SMD; PG-DSO-14
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 4A
Number of channels: 2
Kind of output: N-Channel
Mounting: SMD
Case: PG-DSO-14
On-state resistance: 60mΩ
Supply voltage: 5...28V DC
Technology: PROFET™+ 12V
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PVI1050NSPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED495C0B4CC175DA1EC&compId=pvin.pdf?ci_sign=a3aca8335bf6d9d460b8a7a1ccdacbbc0ac5365d
PVI1050NSPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 2; OUT: photodiode; 2.5kV; Gull wing 8
Type of optocoupler: optocoupler
Kind of output: photodiode
Manufacturer series: PVI-NPbF
Mounting: SMD
Turn-off time: 220µs
Turn-on time: 0.3ms
Number of channels: 2
Case: Gull wing 8
Insulation voltage: 2.5kV
Produkt ist nicht verfügbar
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBFHLLA1
Hersteller: INFINEON TECHNOLOGIES
Category: Optocouplers - Unclassified
Description: OPTOISOLATOR 2CH 2.5KV HIGH-VOLT SMD-8
auf Bestellung 890 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+8.08 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
IPF013N04NF2SATMA1 Infineon-IPF013N04NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee01851d12e8996b03
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 239A; Idm: 956A; 231W; D2PAK-7
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Technology: StrongIRFET™ 2
Polarisation: unipolar
Gate charge: 106nC
On-state resistance: 1.35mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 231W
Drain current: 239A
Case: D2PAK-7
Pulsed drain current: 956A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IQE013N04LM6ATMA1 Infineon-IQE013N04LM6-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a01735298bd175b06
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+1.43 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65ES5XKSA1 IKW30N65ES5.pdf
IKW30N65ES5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 39.5A; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 29ns
Turn-off time: 154ns
Gate-emitter voltage: ±20V
Collector current: 39.5A
Pulsed collector current: 120A
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
22+3.32 EUR
23+3.22 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65WR5XKSA1 IKW30N65WR5.pdf
IKW30N65WR5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IHW30N65R5XKSA1 IHW30N65R5.pdf
IHW30N65R5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 88W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 88W
Case: TO247-3
Mounting: THT
Gate charge: 153nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Turn-off time: 228ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65H5XKSA1 ikw30n65h5.pdf
IKW30N65H5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 94W; TO247-3; H5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 94W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: H5
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 31ns
Turn-off time: 209ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IGP30N65F5XKSA1 IGP30N65F5-DTE.pdf
IGP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 55A; 188W; TO220-3; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 188W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Manufacturer series: F5
Gate-emitter voltage: ±20V
Collector current: 55A
Produkt ist nicht verfügbar
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IGW30N65L5XKSA1 Infineon-IGW30N65L5-DS-v02_01-EN.pdf?fileId=5546d4624b0b249c014b11cd55583ac9
IGW30N65L5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 62A; 114W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 114W
Case: TO247-3
Mounting: THT
Gate charge: 168nC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 44ns
Turn-off time: 359ns
Gate-emitter voltage: ±20V
Collector current: 62A
Pulsed collector current: 120A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IKP30N65F5XKSA1 IKP30N65F5.pdf
IKP30N65F5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 93W; TO220-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 93W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 22ns
Turn-off time: 189ns
Gate-emitter voltage: ±20V
Collector current: 35A
Pulsed collector current: 90A
Produkt ist nicht verfügbar
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CY7C1471BV25-133AXI ?docID=49452
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Supply voltage: 2.5V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 133MHz
Kind of package: in-tray
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Case: TQFP100
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 7050 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.87 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
IRLS4030TRLPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF1405327EAF5EA&compId=IRLS4030TRLPBF.pdf?ci_sign=e08ef8e4ed71a18d7be89ec36c726beec3021151
IRLS4030TRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 370W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 370W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS5012SDAAUMA1 Infineon-BTS5012SDA-DS-v01_01-en.pdf?folderId=db3a304314dca38901152836c5a412ab&fileId=db3a30431d8a6b3c011db95c6eba237d&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.14 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BTS50121EKBXUMA1 Infineon-BTS5012-1EKB-DS-v02_00-EN.pdf?fileId=5546d4625a888733015aa42c52d5113a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch
Type of integrated circuit: power switch
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.86 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPP020N08N5AKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BAF8298E0D611C&compId=IPP020N08N5-DTE.pdf?ci_sign=9dc82295fd02601e52b8b2d21a394a10450c2c86
IPP020N08N5AKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 2mΩ
Gate-source voltage: ±20V
Power dissipation: 375W
Drain-source voltage: 80V
Drain current: 120A
Case: PG-TO220-3
Kind of package: tube
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.45 EUR
13+5.81 EUR
15+5.09 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
CY8C29466-24PVXIT Infineon-CY8C29466_CY8C29566_CY8C29666_CY8C29866_PSoC_Programmable_System-on-Chip-DataSheet-v31_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec690c03ce1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integra
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY8C29466-24PVXIT
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+16.92 EUR
Mindestbestellmenge: 1000
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IPW90R340C3XKSA1 Infineon-IPW90R340C3-DS-v01_00-en.pdf?fileId=db3a3043183a955501183c3a02810087
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 15A; 208W; TO247-3
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+4.42 EUR
120+3.98 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
BSB104N08NP3GXUSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C220E6DEEA811C&compId=BSB104N08NP3G-DTE.pdf?ci_sign=832b18762d15ed5ee8983b6b176c4fdb34e0e794
BSB104N08NP3GXUSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 32A; 48W
Case: CanPAK™ M; MG-WDSON-2
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
On-state resistance: 10.4mΩ
Power dissipation: 48W
Drain current: 32A
Gate-source voltage: ±20V
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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