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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
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IPP60R125P6XKSA1 IPP60R125P6XKSA1 INFINEON TECHNOLOGIES IPP60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPW60R125P6XKSA1 IPW60R125P6XKSA1 INFINEON TECHNOLOGIES IPW60R125P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPL60R125P7AUMA1 IPL60R125P7AUMA1 INFINEON TECHNOLOGIES IPL60R125P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
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IPAN60R125PFD7SXKSA1 IPAN60R125PFD7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES BSS192PH6327FTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
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CY9BF324MPMC-G-MNE2 INFINEON TECHNOLOGIES Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
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CY62187EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IGCM06F60GAXKMA1 IGCM06F60GAXKMA1 INFINEON TECHNOLOGIES IGCM06F60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
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IPD65R1K4CFDBTMA1 IPD65R1K4CFDBTMA1 INFINEON TECHNOLOGIES IPD65R1K4CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
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IPD65R420CFDBTMA1 IPD65R420CFDBTMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
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IPD65R225C7ATMA1 IPD65R225C7ATMA1 INFINEON TECHNOLOGIES IPD65R225C7-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES IPD65R250C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
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IPD65R250E6XTMA1 IPD65R250E6XTMA1 INFINEON TECHNOLOGIES IPD65R250E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
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IPD65R400CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFDATMA1 INFINEON TECHNOLOGIES IPD65R420CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 IPD65R600C6BTMA1 INFINEON TECHNOLOGIES IPD65R600C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1 INFINEON TECHNOLOGIES Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
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IPW60R125CPFKSA1 IPW60R125CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO247-3
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28+2.56 EUR
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IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
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1+71.50 EUR
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IPW60R125C6FKSA1 IPW60R125C6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES IPP60R125C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI60R125CPXKSA1 IPI60R125CPXKSA1 INFINEON TECHNOLOGIES IPI60R125CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3GAKSA1 INFINEON TECHNOLOGIES IPI032N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFS7430TRLPBF INFINEON TECHNOLOGIES Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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IRFS7430TRL7PP IRFS7430TRL7PP INFINEON TECHNOLOGIES IRFS7430TRL7PP.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP772T BSP772T INFINEON TECHNOLOGIES BSP772T.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
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32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES BSP77E6433.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
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23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.10 EUR
2000+1.06 EUR
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IRFU13N20DPBF IRFU13N20DPBF INFINEON TECHNOLOGIES irfr13n20dpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF INFINEON TECHNOLOGIES IRFR3504ZTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z AUIRFR3504Z INFINEON TECHNOLOGIES auirfr3504.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA1 INFINEON TECHNOLOGIES BSS670S2LH6327XTSA.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
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228+0.31 EUR
363+0.20 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.07 EUR
1097+0.07 EUR
1500+0.06 EUR
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BSS670S2LH6433XTMA1 INFINEON TECHNOLOGIES BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.06 EUR
Mindestbestellmenge: 10000
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1EDC10I12MHXUMA1 1EDC10I12MHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
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BSP89H6327XTSA1 BSP89H6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 428 Stücke:
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105+0.69 EUR
143+0.50 EUR
168+0.43 EUR
197+0.36 EUR
208+0.34 EUR
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PVT322ASPBF INFINEON TECHNOLOGIES IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
50+14.10 EUR
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PVT322S-TPBF INFINEON TECHNOLOGIES INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw pvt322.pdf?fileId=5546d462533600a40153568427eb2965 Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
750+11.28 EUR
Mindestbestellmenge: 750
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IRFB3077PBFXKMA1 INFINEON TECHNOLOGIES Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R125C7XKSA1 IPA65R125C7XKSA1 INFINEON TECHNOLOGIES IPA65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES IPP65R125C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 INFINEON TECHNOLOGIES BSL296SNH6327XTSA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
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BCR22PNH6327XTSA1 INFINEON TECHNOLOGIES bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.09 EUR
Mindestbestellmenge: 3000
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IRFB3306PBF IRFB3306PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E5921B6CDF1A6F5005056AB5A8F&compId=irfs3306pbf.pdf?ci_sign=3eff737cd65f7676704d1e680efaba849ec13fe8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1610 Stücke:
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25+2.86 EUR
73+0.99 EUR
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES IRS2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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DD180N22SHPSA1 INFINEON TECHNOLOGIES DD180N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP80R1K2P7XKSA1 IPP80R1K2P7XKSA1 INFINEON TECHNOLOGIES IPP80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 IPU80R1K2P7AKMA1 INFINEON TECHNOLOGIES IPU80R1K2P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
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IPD80R1K2P7ATMA1 IPD80R1K2P7ATMA1 INFINEON TECHNOLOGIES IPD80R1K2P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.52 EUR
23+3.12 EUR
24+3.00 EUR
25+2.90 EUR
Mindestbestellmenge: 21
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1EDC20H12AHXUMA1 1EDC20H12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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1EDC60H12AHXUMA1 1EDC60H12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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DD600N16KHPSA1 DD600N16KHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPB60R120P7ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896815B32C1F013D6&compId=IPB60R120P7.pdf?ci_sign=0b1a6511fa612c71b351822f654355b3493d4f24
IPB60R120P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
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IPP60R125P6XKSA1 IPP60R125P6-DTE.pdf
IPP60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125P6XKSA1 IPW60R125P6-DTE.pdf
IPW60R125P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPL60R125P7AUMA1 IPL60R125P7.pdf
IPL60R125P7AUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Produkt ist nicht verfügbar
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IPAN60R125PFD7SXKSA1 Infineon-IPAN60R125PFD7S-DataSheet-v02_01-EN.pdf?fileId=5546d4626df6ee62016e224bf53a667c
IPAN60R125PFD7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSS192PH6327FTSA1 BSS192PH6327FTSA1.pdf
BSS192PH6327FTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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CY9BF324MPMC-G-MNE2 Infineon-CY9B320M_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edbd0465f0c
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
119+8.34 EUR
Mindestbestellmenge: 119
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CY62187EV30LL-55BAXIT Infineon-CY62187EV30_MoBL_64-Mbit_(4M_x_16)_Static_RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebef92d32fb&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
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IGCM06F60GAXKMA1 IGCM06F60GA.pdf
IGCM06F60GAXKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
Produkt ist nicht verfügbar
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IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R1K4CFDBTMA1 IPD65R1K4CFD-DTE.pdf
IPD65R1K4CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDBTMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R225C7ATMA1 IPD65R225C7-DTE.pdf
IPD65R225C7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250C6XTMA1 IPD65R250C6-DTE.pdf
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R250E6XTMA1 IPD65R250E6-DTE.pdf
IPD65R250E6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R420CFDATMA1 IPD65R420CFD-DTE.pdf
IPD65R420CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600C6BTMA1 IPD65R600C6-DTE.pdf
IPD65R600C6BTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDATMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPD65R950CFDBTMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDBTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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TLS715B0NAV50XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Input voltage: 4...40V
Produkt ist nicht verfügbar
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IPW60R125CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E1B2AF78D1BF&compId=IPW60R125CP-DTE.pdf?ci_sign=538fed47957f97bf4916397747f0a9fe7c4f3e94
IPW60R125CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO247-3
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO247-3
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
28+2.56 EUR
Mindestbestellmenge: 16
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IPP60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a
IPP60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Power dissipation: 208W
Polarisation: unipolar
Kind of package: tube
Technology: CoolMOS™ CP
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: PG-TO220-3
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.50 EUR
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IPW60R125C6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E8299B4771BF&compId=IPW60R125C6-DTE.pdf?ci_sign=2cd58f7e86f660b20c7fc99d26ffae291963f804
IPW60R125C6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R125C6XKSA1 IPP60R125C6-DTE.pdf
IPP60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI60R125CPXKSA1 IPI60R125CP-DTE.pdf
IPI60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPI032N06N3GAKSA1 IPI032N06N3G-DTE.pdf
IPI032N06N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 188W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 188W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 426A; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 426A
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFS7430TRL7PP IRFS7430TRL7PP.pdf
IRFS7430TRL7PP
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 240A; 375W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 240A
Case: D2PAK-7
Mounting: SMD
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.55mΩ
Power dissipation: 375W
Gate charge: 305nC
Technology: HEXFET®
Produkt ist nicht verfügbar
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BSP772T BSP772T.pdf
BSP772T
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.6A; Ch: 1; N-Channel; SMD; SO8
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SO8
On-state resistance: 50mΩ
Technology: Classic PROFET
Supply voltage: 5...34V DC
auf Bestellung 1716 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.53 EUR
32+2.25 EUR
34+2.12 EUR
500+2.04 EUR
Mindestbestellmenge: 16
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BSP77E6433 BSP77E6433.pdf
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 3753 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.23 EUR
35+2.09 EUR
62+1.16 EUR
65+1.10 EUR
2000+1.06 EUR
Mindestbestellmenge: 23
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IRFU13N20DPBF irfr13n20dpbf.pdf
IRFU13N20DPBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 14A; 110W; IPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 14A
Power dissipation: 110W
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFR3504ZTRPBF IRFR3504ZTRPBF.pdf
IRFR3504ZTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFR3504Z auirfr3504.pdf
AUIRFR3504Z
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Power dissipation: 90W
Case: DPAK
Mounting: SMD
Kind of channel: enhancement
Gate charge: 30nC
On-state resistance: 9mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
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BSS670S2LH6327XTSA1 BSS670S2LH6327XTSA.pdf
BSS670S2LH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 0.54A; 0.36W; SOT23
Type of transistor: N-MOSFET
Case: SOT23
Drain-source voltage: 55V
Drain current: 0.54A
On-state resistance: 0.65Ω
Mounting: SMD
Power dissipation: 0.36W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2032 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
363+0.20 EUR
506+0.14 EUR
587+0.12 EUR
1038+0.07 EUR
1097+0.07 EUR
1500+0.06 EUR
Mindestbestellmenge: 228
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BSS670S2LH6433XTMA1 BSS670S2L_Rev2.6.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a304330f68606013109e4a7fb0094
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.06 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
1EDC10I12MHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B631F8F54993D6&compId=1EDCxxI12MH.pdf?ci_sign=4561d7fac3ac124e788ba07bb931c0c6ab15205c
1EDC10I12MHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -1...1A
Mounting: SMD
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...18V
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.25 EUR
Mindestbestellmenge: 22
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BSP89H6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE595A76F50D5BC510B&compId=BSP89H6327XTSA1.pdf?ci_sign=7971c84e5dd572ba81dd29f18b275092ee4394af
BSP89H6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
Drain-source voltage: 240V
Drain current: 0.35A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Power dissipation: 1.8W
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
143+0.50 EUR
168+0.43 EUR
197+0.36 EUR
208+0.34 EUR
Mindestbestellmenge: 105
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PVT322ASPBF IRSD-S-A0001022139-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 161 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+14.10 EUR
Mindestbestellmenge: 50
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PVT322S-TPBF INFN-S-A0002782763-1.pdf?t.download=true&u=5oefqw pvt322.pdf?fileId=5546d462533600a40153568427eb2965
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state
Type of relay: solid state
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
750+11.28 EUR
Mindestbestellmenge: 750
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IRFB3077PBFXKMA1 Infineon-IRFB3077-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015356153f0d1def
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 210A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 210A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPA65R125C7XKSA1 IPA65R125C7-DTE.pdf
IPA65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R125C7XKSA1 IPP65R125C7-DTE.pdf
IPP65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1.pdf
BSL296SNH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; 2W; TSOP6; ESD
Mounting: SMD
Case: TSOP6
Drain current: 1.4A
Version: ESD
Type of transistor: N-MOSFET
Technology: OptiMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Polarisation: unipolar
On-state resistance: 0.56Ω
Drain-source voltage: 100V
Power dissipation: 2W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR22PNH6327XTSA1 bcr22pn.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a3730114406a036a02fe
Hersteller: INFINEON TECHNOLOGIES
Category: Complementary transistors
Description: Transistor: NPN / PNP
Type of transistor: NPN / PNP
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+0.09 EUR
Mindestbestellmenge: 3000
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IRFB3306PBF pVersion=0046&contRep=ZT&docId=E1C04E5921B6CDF1A6F5005056AB5A8F&compId=irfs3306pbf.pdf?ci_sign=3eff737cd65f7676704d1e680efaba849ec13fe8
IRFB3306PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 160A; 230W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 160A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 85nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1610 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
73+0.99 EUR
77+0.93 EUR
Mindestbestellmenge: 25
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IRS2302SPBF IRS2302SPBF.pdf
IRS2302SPBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Power: 625mW
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Produkt ist nicht verfügbar
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DD180N22SHPSA1 DD180N22S.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 226A; BG-PB34SB-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 226A
Case: BG-PB34SB-1
Max. forward voltage: 1.39V
Max. forward impulse current: 5.75kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
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IPP80R1K2P7XKSA1 IPP80R1K2P7.pdf
IPP80R1K2P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.94 EUR
45+1.62 EUR
51+1.42 EUR
54+1.34 EUR
150+1.33 EUR
200+1.32 EUR
Mindestbestellmenge: 37
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IPU80R1K2P7AKMA1 IPU80R1K2P7.pdf
IPU80R1K2P7AKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; IPAK; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
86+0.84 EUR
96+0.75 EUR
110+0.65 EUR
117+0.62 EUR
Mindestbestellmenge: 76
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IPD80R1K2P7ATMA1 IPD80R1K2P7.pdf
IPD80R1K2P7ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.1A; 37W; PG-TO252-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.1A
Power dissipation: 37W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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1EDC60I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC60I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Kind of integrated circuit: high-side; IGBT gate driver
Case: PG-DSO-8
Output current: -6...6A
Mounting: SMD
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Topology: single transistor
Voltage class: 600/650/1200V
Supply voltage: 3.1...17V; 13...35V
auf Bestellung 659 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.52 EUR
23+3.12 EUR
24+3.00 EUR
25+2.90 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
1EDC20H12AHXUMA1 1EDCxxX12AH.pdf
1EDC20H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Output current: -2...2A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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1EDC60H12AHXUMA1 1EDCxxX12AH.pdf
1EDC60H12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Output current: -6...6A
Mounting: SMD
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
Topology: single transistor
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R299CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f
IPP60R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 34A
Power dissipation: 136W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD600N16KHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C9F08533614469&compId=DD600N18K.pdf?ci_sign=f10963049ff88079e530079ed9b25fbb721c5e8a
DD600N16KHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; BG-PB60AT-1; screw
Type of module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 600A
Case: BG-PB60AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 22kA
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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