Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149672) > Seite 2487 nach 2495
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRLS3034TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 343A Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
AUIRLS3034 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 243A Power dissipation: 375W Case: DPAK Gate-source voltage: ±20V On-state resistance: 1.7mΩ Mounting: SMD Gate charge: 108nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL512T11TFIV10 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL512T11TFIV20 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL512T11TFV010 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
S29GL512T11TFV020 | INFINEON TECHNOLOGIES |
![]() Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 110ns Case: TSOP56 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
T560N18TOFXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA Max. off-state voltage: 1.8kV Load current: 559A Case: BG-T4814K0-1 Max. forward impulse current: 8kA Gate current: 200mA Kind of package: in-tray Mounting: Press-Pack Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 809A Type of thyristor: hockey-puck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TD160N18SOF | INFINEON TECHNOLOGIES |
![]() Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Max. load current: 160A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
T3160N18TOFVTXPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA Max. off-state voltage: 1.8kV Load current: 3.16kA Case: BG-T11126K-1 Max. forward impulse current: 63kA Gate current: 250mA Kind of package: in-tray Mounting: Press-Pack Features of semiconductor devices: phase controlled thyristor (PCT) Max. load current: 7kA Type of thyristor: hockey-puck |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
TT160N18SOF | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 160A Case: BG-PB34SB-1 Max. forward voltage: 1.82V Max. forward impulse current: 5.2kA Gate current: 145mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
BAT6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW Type of diode: Schottky rectifying Case: SC79 Mounting: SMD Max. off-state voltage: 3V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.1W |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
BCR420UE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BCR420UE6433HTMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
IPP50R250CPXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Power dissipation: 114W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
![]() |
BUZ73A | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220 Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.8A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 40W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
SIPC69SN60C3X2SA2 | INFINEON TECHNOLOGIES |
Category: Transistors - Unclassified Description: SIPC69SN60C3X2SA2 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IPB530N15N3GATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3 Drain-source voltage: 150V Drain current: 21A On-state resistance: 53mΩ Type of transistor: N-MOSFET Power dissipation: 68W Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: PG-TO263-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
TLE49643KXTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Sensor: Hall Type of sensor: Hall |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
ISP13DP06NMSATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IRFR2405TRLPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IRFR2405TRPBF | INFINEON TECHNOLOGIES |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IRFR7440TRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 125A Pulsed drain current: 760A Power dissipation: 140W Case: DPAK Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
BCR146E6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
DEMO SENSE2GOL | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included Type of development kit: demonstration Kit contents: documentation; prototype board; USB A - USB B micro cable Components: BGT24LTR11 Software: included |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
STT800N16P55XPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V Case: BG-PS55-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.56V Load current: 800A Semiconductor structure: opposing Gate current: 200mA Max. forward impulse current: 5.4kA Electrical mounting: screw Mechanical mounting: screw Type of module: thyristor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
IRFR540ZTRPBF | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
DD340N20SHPSA1 | INFINEON TECHNOLOGIES |
![]() Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA Case: BG-PB50SB-1 Mechanical mounting: screw Type of module: diode Semiconductor structure: double series Max. forward impulse current: 10kA Max. forward voltage: 1.31V Max. off-state voltage: 2kV Load current: 330A Electrical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
IPW60R070CFD7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 156W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.129Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 67nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPW60R070P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 53.5A Power dissipation: 391W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
AUIR3240STR | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Supply voltage: 4...36V DC Mounting: SMD Number of channels: 1 Kind of package: reel; tape Voltage class: 40V Output current: 0.3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
AUIR3242SXUMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Supply voltage: 3...36V DC Mounting: SMD Number of channels: 1 Voltage class: 40V Output current: 0.2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BCW66KFE6327 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.8A Power dissipation: 0.5W Case: SOT23 Mounting: SMD Frequency: 170MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
BCW66KGE6327HTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: NPN Type of transistor: NPN |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
![]() |
IPP60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPW60R080P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPB60R080P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPZA60R080P7XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 129W Case: PG-TO247-4 Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPP60R120P7 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPB60R120P7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 95W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Gate charge: 36nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPP60R125P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPW60R125P6XKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 219W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPL60R125P7AUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 111W Case: PG-VSON-4 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Version: ESD Gate charge: 36nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPAN60R125PFD7SXKSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A Type of transistor: N-MOSFET Technology: CoolMOS™ PFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 16A Pulsed drain current: 66A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.235Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
BSS192PH6327FTSA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -250V Drain current: -190mA Power dissipation: 1W Case: SOT89 Gate-source voltage: ±20V On-state resistance: 12Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
CY9BF324MPMC-G-MNE2 | INFINEON TECHNOLOGIES |
![]() Description: CY9BF324MPMC-G-MNE2 |
auf Bestellung 167 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
CY62187EV30LL-55BAXIT | INFINEON TECHNOLOGIES |
![]() Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel Type of integrated circuit: SRAM memory Case: FBGA48 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of memory: SRAM Memory organisation: 4Mx16bit Access time: 55ns Kind of interface: parallel Memory: 64Mb SRAM Supply voltage: 2.2...3.6V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
IGCM06F60GAXKMA1 | INFINEON TECHNOLOGIES |
![]() Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A Case: PG-MDIP24 Mounting: THT Kind of package: tube Type of integrated circuit: driver Power dissipation: 23.6W Integrated circuit features: integrated bootstrap functionality Protection: anti-overload OPP; undervoltage UVP Technology: ClPOS™ Mini; TRENCHSTOP™ Kind of integrated circuit: 3-phase motor controller; IPM Topology: IGBT three-phase bridge; thermistor Voltage class: 600V Operating temperature: -40...125°C Operating voltage: 13.5...18.5/0...400V DC Frequency: 20kHz Output current: -6...6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R600E6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 7.3A Drain-source voltage: 650V Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.6Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R1K4CFDBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 2.8A Drain-source voltage: 650V Power dissipation: 28.4W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 1.4Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R420CFDBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 8.7A Drain-source voltage: 650V Power dissipation: 83.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.42Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R225C7ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 11A Drain-source voltage: 650V Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.225Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R250C6XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 16.1A Drain-source voltage: 650V Power dissipation: 208.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R250E6XTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 16.1A Drain-source voltage: 650V Power dissipation: 208W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.25Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
IPD65R400CEAUMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252 Mounting: SMD Case: PG-TO252 Drain current: 9.5A Drain-source voltage: 700V Power dissipation: 118W Polarisation: unipolar Technology: CoolMOS™ CE Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 30A On-state resistance: 0.4Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||
![]() |
IPD65R420CFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 8.7A Drain-source voltage: 650V Power dissipation: 83.3W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.42Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R600C6BTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 7.3A Drain-source voltage: 650V Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.6Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R600E6ATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 7.3A Drain-source voltage: 650V Power dissipation: 63W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.6Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R660CFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 6A Drain-source voltage: 650V Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.66Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R660CFDBTMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 6A Drain-source voltage: 650V Power dissipation: 62.5W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.66Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
![]() |
IPD65R950CFDATMA1 | INFINEON TECHNOLOGIES |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Drain current: 3.9A Drain-source voltage: 650V Power dissipation: 36.7W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V On-state resistance: 0.95Ω Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
IRLS3034TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 343A; 375W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 343A
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIRLS3034 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 243A; 375W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 243A
Power dissipation: 375W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Gate charge: 108nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFIV10 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFIV20 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFV010 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
S29GL512T11TFV020 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 110ns; TSOP56; in-tray
Type of integrated circuit: FLASH memory
Kind of memory: NOR Flash
Memory: 512Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 110ns
Case: TSOP56
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T560N18TOFXPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 809A; 559A; Igt: 200mA
Max. off-state voltage: 1.8kV
Load current: 559A
Case: BG-T4814K0-1
Max. forward impulse current: 8kA
Gate current: 200mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 809A
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TD160N18SOF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Max. load current: 160A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
T3160N18TOFVTXPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
Category: Button thyristors
Description: Thyristor: hockey-puck; 1.8kV; Ifmax: 7kA; 3.16kA; Igt: 250mA
Max. off-state voltage: 1.8kV
Load current: 3.16kA
Case: BG-T11126K-1
Max. forward impulse current: 63kA
Gate current: 250mA
Kind of package: in-tray
Mounting: Press-Pack
Features of semiconductor devices: phase controlled thyristor (PCT)
Max. load current: 7kA
Type of thyristor: hockey-puck
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TT160N18SOF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT6302VH6327XTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
131+ | 0.55 EUR |
166+ | 0.43 EUR |
233+ | 0.31 EUR |
271+ | 0.26 EUR |
421+ | 0.17 EUR |
BCR420UE6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR420UE6433HTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP50R250CPXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; 114W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Power dissipation: 114W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.12 EUR |
27+ | 2.75 EUR |
30+ | 2.39 EUR |
32+ | 2.25 EUR |
BUZ73A |
![]() ![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 200V; 5.8A; 40W; TO220
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.8A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 40W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SIPC69SN60C3X2SA2 |
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 9.18 EUR |
IPB530N15N3GATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 21A; 68W; PG-TO263-3
Drain-source voltage: 150V
Drain current: 21A
On-state resistance: 53mΩ
Type of transistor: N-MOSFET
Power dissipation: 68W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PG-TO263-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TLE49643KXTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
Category: Hall Sensors
Description: Sensor: Hall
Type of sensor: Hall
auf Bestellung 18000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.42 EUR |
ISP13DP06NMSATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.29 EUR |
IRFR2405TRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR2405TRPBF | ![]() |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR7440TRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCR146E6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.05 EUR |
DEMO SENSE2GOL |
Hersteller: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Category: Development kits - others
Description: Dev.kit: demonstration; Comp: BGT24LTR11; Software: included
Type of development kit: demonstration
Kit contents: documentation; prototype board; USB A - USB B micro cable
Components: BGT24LTR11
Software: included
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STT800N16P55XPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Category: Thyristor modules
Description: Module: thyristor; opposing; 1.6kV; 800A; BG-PS55-1; Ufmax: 1.56V
Case: BG-PS55-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.56V
Load current: 800A
Semiconductor structure: opposing
Gate current: 200mA
Max. forward impulse current: 5.4kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: thyristor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IRFR540ZTRPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
2000+ | 0.65 EUR |
DD340N20SHPSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Mechanical mounting: screw
Type of module: diode
Semiconductor structure: double series
Max. forward impulse current: 10kA
Max. forward voltage: 1.31V
Max. off-state voltage: 2kV
Load current: 330A
Electrical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R070CFD7 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R070P6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3240STR |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.3A; Ch: 1; 4÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 4...36V DC
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Voltage class: 40V
Output current: 0.3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
AUIR3242SXUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; 0.2A; Ch: 1; 3÷36VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Supply voltage: 3...36V DC
Mounting: SMD
Number of channels: 1
Voltage class: 40V
Output current: 0.2A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW66KFE6327 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.8A; 0.5W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.8A
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Frequency: 170MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BCW66KGE6327HTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.06 EUR |
IPP60R080P7 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R080P7 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R080P7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPZA60R080P7XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R120P7 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPB60R120P7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPP60R125P6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPW60R125P6XKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPL60R125P7AUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 111W; PG-VSON-4; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 111W
Case: PG-VSON-4
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Version: ESD
Gate charge: 36nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPAN60R125PFD7SXKSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ PFD7; unipolar; 650V; 16A; Idm: 66A
Type of transistor: N-MOSFET
Technology: CoolMOS™ PFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.235Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BSS192PH6327FTSA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; SOT89
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
Case: SOT89
Gate-source voltage: ±20V
On-state resistance: 12Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CY9BF324MPMC-G-MNE2 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
Category: Integrated circuits - Unclassified
Description: CY9BF324MPMC-G-MNE2
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
119+ | 8.34 EUR |
CY62187EV30LL-55BAXIT |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 64MbSRAM; 4Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Case: FBGA48
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of memory: SRAM
Memory organisation: 4Mx16bit
Access time: 55ns
Kind of interface: parallel
Memory: 64Mb SRAM
Supply voltage: 2.2...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IGCM06F60GAXKMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; -6÷6A
Case: PG-MDIP24
Mounting: THT
Kind of package: tube
Type of integrated circuit: driver
Power dissipation: 23.6W
Integrated circuit features: integrated bootstrap functionality
Protection: anti-overload OPP; undervoltage UVP
Technology: ClPOS™ Mini; TRENCHSTOP™
Kind of integrated circuit: 3-phase motor controller; IPM
Topology: IGBT three-phase bridge; thermistor
Voltage class: 600V
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Output current: -6...6A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R600E6BTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R1K4CFDBTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 2.8A
Drain-source voltage: 650V
Power dissipation: 28.4W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R420CFDBTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R225C7ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 11A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R250C6XTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R250E6XTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 16.1A
Drain-source voltage: 650V
Power dissipation: 208W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R400CEAUMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 9.5A; Idm: 30A; 118W; PG-TO252
Mounting: SMD
Case: PG-TO252
Drain current: 9.5A
Drain-source voltage: 700V
Power dissipation: 118W
Polarisation: unipolar
Technology: CoolMOS™ CE
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 30A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R420CFDATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 8.7A
Drain-source voltage: 650V
Power dissipation: 83.3W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R600C6BTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R600E6ATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 7.3A
Drain-source voltage: 650V
Power dissipation: 63W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R660CFDATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R660CFDBTMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 6A
Drain-source voltage: 650V
Power dissipation: 62.5W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.66Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
IPD65R950CFDATMA1 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Drain current: 3.9A
Drain-source voltage: 650V
Power dissipation: 36.7W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH