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IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBFB08E807C143&compId=IPW60R330P6.pdf?ci_sign=8f3765fccc89d1f705e81841d8079e376b4c7e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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IPW60R125CFD7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 210 Stücke:
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30+3.63 EUR
150+3.27 EUR
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IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 31A; 255W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 280 Stücke:
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30+7.61 EUR
90+6.85 EUR
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IPW60R060C7XKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a130041f2b80 Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 185 Stücke:
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30+6.05 EUR
90+5.45 EUR
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IPA083N10NM5SXKSA1 IPA083N10NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 35A
Gate-source voltage: ±20V
Pulsed drain current: 200A
Power dissipation: 36W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 352 Stücke:
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34+2.14 EUR
38+1.93 EUR
43+1.7 EUR
47+1.53 EUR
50+1.44 EUR
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CY7C1460KV33-200AXCT INFINEON TECHNOLOGIES ?docID=53657 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
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CY7C1460KVE33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1460KVE33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1460KV25-250AXC INFINEON TECHNOLOGIES Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
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CY7C1460KV33-167AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-167BZC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-200AXC INFINEON TECHNOLOGIES ?docID=53657 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-250AXI INFINEON TECHNOLOGIES ?docID=53657 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: TQFP100
Produkt ist nicht verfügbar
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IRF150P220AKMA1 INFINEON TECHNOLOGIES Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH05G120C5XKSA1 IDH05G120C5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB86BA77C05AFA8&compId=IDH05G120C5-DTE.pdf?ci_sign=c929609316e2d0df7a888e8d2e4ef763e55570fa Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; PG-TO220-2; 109W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 59A
Leakage current: 2.5µA
Power dissipation: 109W
Kind of package: tube
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 IPA80R1K0CEXKSA2 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB90B41EDB95AF739EA02EA0C7&compId=IPA80R1K0CE.pdf?ci_sign=56fb0d01ca4bd2418bde8aa3283e401ed1ec8ba7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 31nC
On-state resistance: 0.95Ω
Drain current: 3.6A
Gate-source voltage: ±20V
Pulsed drain current: 18A
Power dissipation: 32W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 169 Stücke:
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49+1.49 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 49
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IPA80R360P7XKSA1 IPA80R360P7XKSA1 INFINEON TECHNOLOGIES Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.36Ω
Drain current: 8.6A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Power dissipation: 30W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 54 Stücke:
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23+3.22 EUR
39+1.87 EUR
41+1.76 EUR
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IPA057N06N3GXKSA1 IPA057N06N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99D203175811C&compId=IPA057N06N3G-DTE.pdf?ci_sign=8120eafd3b66acc9439c1bdc8098043f3d669323 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 5.7mΩ
Drain current: 60A
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 60V
Kind of package: tube
auf Bestellung 47 Stücke:
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21+3.53 EUR
27+2.69 EUR
47+1.52 EUR
Mindestbestellmenge: 21
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IPA086N10N3GXKSA1 IPA086N10N3GXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4FE93D5EE11C&compId=IPA086N10N3G-DTE.pdf?ci_sign=e123d9ce3cc8a378efbf0b9a0f3f766723283fc7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 37.5W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 428 Stücke:
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27+2.66 EUR
49+1.49 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 27
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IPA80R750P7XKSA1 IPA80R750P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD1AA640E0143&compId=IPA80R750P7.pdf?ci_sign=4f7ec53a557f057124394852a266cc03e1af40b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 26W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 471 Stücke:
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36+1.99 EUR
48+1.5 EUR
65+1.1 EUR
69+1.04 EUR
250+1 EUR
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IPA083N10N5XKSA1 IPA083N10N5XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4E2EDEAF411C&compId=IPA083N10N5-DTE.pdf?ci_sign=817546629e601f5d037ddd3655bcce94dee0b121 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 17 Stücke:
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17+4.2 EUR
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IPAN70R450P7SXKSA1 IPAN70R450P7SXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC8794563FF3D1&compId=IPAN70R450P7S.pdf?ci_sign=94ee71f1b57ed1bc518b4bfc42cee46d73a2060c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Drain current: 6.5A
Gate-source voltage: ±16V
Power dissipation: 22.7W
Drain-source voltage: 700V
Kind of package: tube
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
84+0.86 EUR
Mindestbestellmenge: 63
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IPD220N06L3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 30A; 36W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
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2500+0.34 EUR
Mindestbestellmenge: 2500
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S25FL128SDPNFI001 INFINEON TECHNOLOGIES 001-98283%20Rev%20T.pdf CYPR-S-A0004852901-1.pdf?t.download=true&u=5oefqw Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 IPI020N06NAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPC50N04S5-5R8 IPC50N04S5-5R8 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R199CPXKSA1 IPP60R199CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
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17+4.25 EUR
20+3.58 EUR
Mindestbestellmenge: 17
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IRS25401PBF IRS25401PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Kind of package: tube
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Supply voltage: 8...16.6V DC
Voltage class: 200V
Topology: buck
auf Bestellung 43 Stücke:
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43+1.66 EUR
Mindestbestellmenge: 43
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IPP65R125C7XKSA1 IPP65R125C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB94A02B2C431BF&compId=IPP65R125C7-DTE.pdf?ci_sign=00d72aa2fd9ce7f2bfa841eaad24f8aa97706fda Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R280E6XKSA1 IPP65R280E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R045C7XKSA1 IPP65R045C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190C6XKSA1 IPP65R190C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R065C7XKSA1 IPP65R065C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP65R095C7XKSA1 IPP65R095C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R110CFDXKSA1 IPP65R110CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB949374A7691BF&compId=IPP65R110CFD-DTE.pdf?ci_sign=3306c54fc7781ecf8d59083104f52f9aed68d333 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R190E6XKSA1 IPP65R190E6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R225C7XKSA1 IPP65R225C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP65R310CFDXKSA1 IPP65R310CFDXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain current: 70A
Drain-source voltage: 300V
Polarisation: unipolar
Produkt ist nicht verfügbar
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ICE5GR1680AGXUMA1 ICE5GR1680AGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 125kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Case: PG-DSO-12
Operating voltage: 10...25.5V DC
Power: 48/27/28W
Topology: flyback
Kind of integrated circuit: PWM controller
Type of integrated circuit: PMIC
Application: SMPS
Operating temperature: -40...140°C
Duty cycle factor: 0...80%
Output current: 5.8A
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 125kHz
Produkt ist nicht verfügbar
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CDM10VXTSA1 INFINEON TECHNOLOGIES Infineon-CDM10V-DS-v01_03-EN.pdf?fileId=5546d46258fc0bc101596eeea3e040ee Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10V2XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632 Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10V3XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870 Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10V4XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10V-4-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e13786a5d586d Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10VDXTSA1 INFINEON TECHNOLOGIES Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10VD2XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
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CDM10VD3XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 1mA
Produkt ist nicht verfügbar
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CDM10VD4XTSA1 INFINEON TECHNOLOGIES Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 1mA
Produkt ist nicht verfügbar
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IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 57 Stücke:
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14+5.21 EUR
15+5 EUR
Mindestbestellmenge: 14
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IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 166 Stücke:
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13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
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IPP60R125CPXKSA1 IPP60R125CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
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8+8.97 EUR
10+7.31 EUR
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IPP60R165CPXKSA1 IPP60R165CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
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17+4.36 EUR
18+4.16 EUR
19+3.96 EUR
20+3.68 EUR
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IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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11+6.71 EUR
16+4.62 EUR
17+4.38 EUR
Mindestbestellmenge: 11
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IPP60R299CPXKSA1 IPP60R299CPXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.46 EUR
32+2.29 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 30
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IPP60R160P6XKSA1 IPP60R160P6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949AA297D091BF&compId=IPP60R160P6-DTE.pdf?ci_sign=7f69625d6b7ccc50bdebc8e093fd2059a469e2c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.16 EUR
19+3.78 EUR
20+3.76 EUR
Mindestbestellmenge: 18
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IPP60R125C6XKSA1 IPP60R125C6XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R022S7XKSA1 IPP60R022S7XKSA1 INFINEON TECHNOLOGIES Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 375A
Produkt ist nicht verfügbar
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IPP60R080P7 IPP60R080P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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IPP60R280P7 IPP60R280P7 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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IPW60R330P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBFB08E807C143&compId=IPW60R330P6.pdf?ci_sign=8f3765fccc89d1f705e81841d8079e376b4c7e3a
IPW60R330P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R125CFD7XKSA1 Infineon-IPW60R125CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fa4562bb2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 600V; 18A; 92W; TO247
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 92W
Case: TO247
Gate-source voltage: 20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 36nC
Kind of channel: enhancement
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+3.63 EUR
150+3.27 EUR
Mindestbestellmenge: 30
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IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 31A; 255W; TO247-3; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 90mΩ
Mounting: THT
Gate charge: 80nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
auf Bestellung 280 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+7.61 EUR
90+6.85 EUR
Mindestbestellmenge: 30
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IPW60R060C7XKSA1 Infineon-IPW60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a130041f2b80
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+6.05 EUR
90+5.45 EUR
Mindestbestellmenge: 30
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IPA083N10NM5SXKSA1 Infineon-IPA083N10NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfe00a06e30
IPA083N10NM5SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 200A; 36W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 35A
Gate-source voltage: ±20V
Pulsed drain current: 200A
Power dissipation: 36W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.14 EUR
38+1.93 EUR
43+1.7 EUR
47+1.53 EUR
50+1.44 EUR
Mindestbestellmenge: 34
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CY7C1460KV33-200AXCT ?docID=53657
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1460KVE33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1460KVE33-200AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1460KV25-250AXC Infineon-CY7C1460KV25_CY7C1462KV25_CY7C1460KVE25_CY7C1462KVE25_36-Mbit_(1_M_36_2_M_18)_Pipelined_SRAM_with_NoBL_Architecture_(With_ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf508349c1&utm_source=cypress&utm_me
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 2.5V DC
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1460KV33-167AXC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1460KV33-167AXI download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1460KV33-167BZC download
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; FBGA165; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: FBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 167MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-200AXC ?docID=53657
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 3.135...3.6V DC
Frequency: 200MHz
Produkt ist nicht verfügbar
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CY7C1460KV33-250AXI ?docID=53657
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 1Mx36bit; TQFP100; parallel; -40÷85°C
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 36Mb SRAM
Memory organisation: 1Mx36bit
Frequency: 250MHz
Kind of package: in-tray
Case: TQFP100
Produkt ist nicht verfügbar
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IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 316A; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 316A
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IDH05G120C5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FB86BA77C05AFA8&compId=IDH05G120C5-DTE.pdf?ci_sign=c929609316e2d0df7a888e8d2e4ef763e55570fa
IDH05G120C5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; PG-TO220-2; 109W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 59A
Leakage current: 2.5µA
Power dissipation: 109W
Kind of package: tube
Produkt ist nicht verfügbar
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IPA80R1K0CEXKSA2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDB95AF739EA02EA0C7&compId=IPA80R1K0CE.pdf?ci_sign=56fb0d01ca4bd2418bde8aa3283e401ed1ec8ba7
IPA80R1K0CEXKSA2
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Technology: CoolMOS™ CE
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 31nC
On-state resistance: 0.95Ω
Drain current: 3.6A
Gate-source voltage: ±20V
Pulsed drain current: 18A
Power dissipation: 32W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 169 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
53+1.37 EUR
55+1.3 EUR
Mindestbestellmenge: 49
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IPA80R360P7XKSA1 Infineon-IPA80R360P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b23b4067a2b98
IPA80R360P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8.6A; Idm: 34A; 30W; TO220FP
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 0.36Ω
Drain current: 8.6A
Gate-source voltage: ±20V
Pulsed drain current: 34A
Power dissipation: 30W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
39+1.87 EUR
41+1.76 EUR
Mindestbestellmenge: 23
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IPA057N06N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A5E99D203175811C&compId=IPA057N06N3G-DTE.pdf?ci_sign=8120eafd3b66acc9439c1bdc8098043f3d669323
IPA057N06N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 60A; 38W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 5.7mΩ
Drain current: 60A
Gate-source voltage: ±20V
Power dissipation: 38W
Drain-source voltage: 60V
Kind of package: tube
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.53 EUR
27+2.69 EUR
47+1.52 EUR
Mindestbestellmenge: 21
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IPA086N10N3GXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4FE93D5EE11C&compId=IPA086N10N3G-DTE.pdf?ci_sign=e123d9ce3cc8a378efbf0b9a0f3f766723283fc7
IPA086N10N3GXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 37.5W; TO220FP
Technology: OptiMOS™ 3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.6mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 37.5W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
27+2.66 EUR
49+1.49 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 27
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IPA80R750P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89E8DD1AA640E0143&compId=IPA80R750P7.pdf?ci_sign=4f7ec53a557f057124394852a266cc03e1af40b5
IPA80R750P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 26W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 0.9Ω
Drain current: 3.9A
Gate-source voltage: ±20V
Power dissipation: 26W
Drain-source voltage: 800V
Kind of package: tube
auf Bestellung 471 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
48+1.5 EUR
65+1.1 EUR
69+1.04 EUR
250+1 EUR
Mindestbestellmenge: 36
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IPA083N10N5XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BA4E2EDEAF411C&compId=IPA083N10N5-DTE.pdf?ci_sign=817546629e601f5d037ddd3655bcce94dee0b121
IPA083N10N5XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 36W; TO220FP
Technology: OptiMOS™ 5
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
On-state resistance: 8.3mΩ
Drain current: 44A
Gate-source voltage: ±20V
Power dissipation: 36W
Drain-source voltage: 100V
Kind of package: tube
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.2 EUR
Mindestbestellmenge: 17
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IPAN70R450P7SXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE88CFC8794563FF3D1&compId=IPAN70R450P7S.pdf?ci_sign=94ee71f1b57ed1bc518b4bfc42cee46d73a2060c
IPAN70R450P7SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6.5A; 22.7W; TO220FP; ESD
Technology: CoolMOS™ P7
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Mounting: THT
Case: TO220FP
Polarisation: unipolar
Gate charge: 13.1nC
On-state resistance: 0.45Ω
Drain current: 6.5A
Gate-source voltage: ±16V
Power dissipation: 22.7W
Drain-source voltage: 700V
Kind of package: tube
auf Bestellung 191 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
63+1.14 EUR
73+0.99 EUR
82+0.87 EUR
84+0.86 EUR
Mindestbestellmenge: 63
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IPD220N06L3GATMA1 Infineon-IPD220N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e266fb35e471a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 30A; 36W; DPAK; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 30A
Power dissipation: 36W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 22mΩ
Mounting: SMD
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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S25FL128SDPNFI001 001-98283%20Rev%20T.pdf CYPR-S-A0004852901-1.pdf?t.download=true&u=5oefqw
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 66MHz; 2.7÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 66MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
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IPI020N06NAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A699409E46E7411C&compId=IPI020N06N-DTE.pdf?ci_sign=ad868dfc0c42fcc58379d7682150801ddb0f6b0a
IPI020N06NAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 214W; PG-TO262-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 214W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IPC50N04S5-5R8 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA68F77C56274A&compId=IPC50N04S55R8.pdf?ci_sign=4e78ae42cfa7aad0122f5bfeac8190ff8fcdfe0c
IPC50N04S5-5R8
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 42W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 42W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R199CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59453B6F1F651BF&compId=IPP60R199CP-DTE.pdf?ci_sign=92d70687cb740539bf38418ae0fd651c7a6f0e05
IPP60R199CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 139W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 139W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.25 EUR
20+3.58 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IRS25401PBF pVersion=0046&contRep=ZT&docId=E222831E099A5DF1A303005056AB0C4F&compId=irs25401pbf.pdf?ci_sign=e254e61d544328852a104fbb88372e928f9b660a
IRS25401PBF
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; high-/low-side,LED driver; DIP8; -700÷500mA; 1W
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; LED driver
Case: DIP8
Output current: -700...500mA
Number of channels: 2
Mounting: THT
Kind of package: tube
Operating temperature: -25...125°C
Turn-off time: 180ns
Turn-on time: 320ns
Power: 1W
Supply voltage: 8...16.6V DC
Voltage class: 200V
Topology: buck
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.66 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R125C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB94A02B2C431BF&compId=IPP65R125C7-DTE.pdf?ci_sign=00d72aa2fd9ce7f2bfa841eaad24f8aa97706fda
IPP65R125C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 101W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 101W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R280E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9516FC6EB1BF&compId=IPP65R280E6-DTE.pdf?ci_sign=ab13db9f0175355a47c6d021969fb1b2df7d6eb9
IPP65R280E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 104W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 104W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R045C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93B1544DB51BF&compId=IPP65R045C7-DTE.pdf?ci_sign=9a69c5defdebe05376b0727807904645fe24291c
IPP65R045C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 227W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95141AB8871BF&compId=IPP65R190C6-DTE.pdf?ci_sign=5a64bab8fdcced60a48f5765d43e2e4394489f2f
IPP65R190C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R065C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB93C310F5351BF&compId=IPP65R065C7-DTE.pdf?ci_sign=09a8b07890ce95ee833156022ebe0e693d191243
IPP65R065C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R095C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB9424047AE91BF&compId=IPP65R095C7-DTE.pdf?ci_sign=f8ae09ca77c7b8a29e1ed1b178a9ae42b093d995
IPP65R095C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 128W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R110CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB949374A7691BF&compId=IPP65R110CFD-DTE.pdf?ci_sign=3306c54fc7781ecf8d59083104f52f9aed68d333
IPP65R110CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R190E6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFB95C9A710011BF&compId=IPP65R190E6-DTE.pdf?ci_sign=7f819fdf24e47db7bb7e5f302ad1ab4224b75ce2
IPP65R190E6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R225C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB90D7372A51BF&compId=IPP65R225C7-DTE.pdf?ci_sign=377275d8e623ac997e45525f6a965f7f2792db38
IPP65R225C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.225Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP65R310CFDXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AFBB9625353B71BF&compId=IPP65R310CFD-DTE.pdf?ci_sign=e939a0d4ccdfde273e5b46a65ead8a2997f171df
IPP65R310CFDXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11.4A
Power dissipation: 104.2W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP4868PBFAKMA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Mounting: THT
Case: TO247AC
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Drain current: 70A
Drain-source voltage: 300V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE5GR1680AGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5
ICE5GR1680AGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 125kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Case: PG-DSO-12
Operating voltage: 10...25.5V DC
Power: 48/27/28W
Topology: flyback
Kind of integrated circuit: PWM controller
Type of integrated circuit: PMIC
Application: SMPS
Operating temperature: -40...140°C
Duty cycle factor: 0...80%
Output current: 5.8A
Number of channels: 1
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 125kHz
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10VXTSA1 Infineon-CDM10V-DS-v01_03-EN.pdf?fileId=5546d46258fc0bc101596eeea3e040ee
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10V2XTSA1 Infineon-CDM10V-2-DS-v01_00-EN.pdf?fileId=5546d4625b62cd8a015ba5215cb66632
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10V3XTSA1 Infineon-CDM10V-3-DS-v01_00-EN.pdf?fileId=5546d4625debb399015e13817cbd5870
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10V4XTSA1 Infineon-CDM10V-4-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e13786a5d586d
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10VDXTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10VD2XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 5mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10VD3XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CDM10VD4XTSA1 Infineon-CDM10VD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015ba52a268c663a
Hersteller: INFINEON TECHNOLOGIES
Category: Integrated circuits - others
Description: IC: LED dimming interface IC; SOT23-6; reel,tape; 11÷25V
Case: SOT23-6
Mounting: SMD
Kind of package: reel; tape
Operating voltage: 11...25V
Type of integrated circuit: LED dimming interface IC
Output current: 1mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59457F5CAAA71BF&compId=IPP60R099CP-DTE.pdf?ci_sign=58cf3965cfc8109487e20bd8d33b892067a49653
IPP60R099CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 57 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.21 EUR
15+5 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E1D8ADC57F2749&compId=IPP60R099P7.pdf?ci_sign=f712e67ed86a8f78e11410cb3eca32c304fb8895
IPP60R099P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 166 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.79 EUR
14+5.21 EUR
15+5.02 EUR
16+4.75 EUR
50+4.56 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R125CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594552FBE8F91BF&compId=IPP60R125CP-DTE.pdf?ci_sign=afab661542e2620673283235d20ec3775808743a
IPP60R125CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
8+8.97 EUR
10+7.31 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R165CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594570231AE91BF&compId=IPP60R165CP-DTE.pdf?ci_sign=db1213e31989efc1585e3a26d55298e6a8de380a
IPP60R165CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 192W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
18+4.16 EUR
19+3.96 EUR
20+3.68 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R099C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945C848E84F1BF&compId=IPP60R099C6-DTE.pdf?ci_sign=309580ea66cbc75322c87db6d192b428c777e9ea
IPP60R099C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.71 EUR
16+4.62 EUR
17+4.38 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R299CPXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594497E2285B1BF&compId=IPP60R299CP-DTE.pdf?ci_sign=0aa6e8461138adc0224ff0880d043028a0164f7f
IPP60R299CPXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 96W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 96W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.299Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.46 EUR
32+2.29 EUR
38+1.89 EUR
40+1.79 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R160P6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5949AA297D091BF&compId=IPP60R160P6-DTE.pdf?ci_sign=7f69625d6b7ccc50bdebc8e093fd2059a469e2c0
IPP60R160P6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23.8A; 176W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23.8A
Power dissipation: 176W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
19+3.78 EUR
20+3.76 EUR
Mindestbestellmenge: 18
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IPP60R125C6XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B5945AE6D53F51BF&compId=IPP60R125C6-DTE.pdf?ci_sign=cb3192ecc3b12df96459b035fc86ddf06d8a84f8
IPP60R125C6XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPP60R022S7XKSA1 Infineon-IPP60R022S7-DataSheet-v02_01-EN.pdf?fileId=5546d4626bb628d7016bc25d1085779d
IPP60R022S7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ S7; unipolar; 600V; 23A; Idm: 375A
Type of transistor: N-MOSFET
Technology: CoolMOS™ S7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 390W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 375A
Produkt ist nicht verfügbar
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IPP60R080P7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AE924C1D4A508A14&compId=IPP60R080P7.pdf?ci_sign=7acf8b405e5a5445a1cfbb7a2bbb797c5709f3ef
IPP60R080P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 129W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 129W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Produkt ist nicht verfügbar
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IPP60R280P7 pVersion=0046&contRep=ZT&docId=005056AB752F1EE7A1E2D56A4027A749&compId=IPP60R280P7.pdf?ci_sign=d3e6a2bf46f2739688b3d650a2c349effce4428a
IPP60R280P7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 53W; PG-TO220-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 53W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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