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IDM02G120C5XTMA1 IDM02G120C5XTMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 31A
Leakage current: 1.2µA
Power dissipation: 98W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
Produkt ist nicht verfügbar
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BSC014N06NSATMA1 BSC014N06NSATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IRF6727MTRPBF IRF6727MTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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DD160N22K DD160N22K INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.4V
Load current: 160A
Semiconductor structure: double series
Max. forward impulse current: 4.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
1+209.31 EUR
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BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.24 EUR
410+0.17 EUR
538+0.13 EUR
611+0.12 EUR
1214+0.059 EUR
1283+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 295
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0 Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
218+0.33 EUR
353+0.2 EUR
463+0.15 EUR
516+0.14 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 218
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IPW60R045CPFKSA1 IPW60R045CPFKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ60R040C7XKSA1 IPZ60R040C7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59552626D78D1BF&compId=IPZ60R040C7-DTE.pdf?ci_sign=1d1709cb23ef90f3adae91e68c26105e3f8c2550 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
4+18.25 EUR
5+17.26 EUR
10+17.12 EUR
Mindestbestellmenge: 4
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AUIRFR8405TRL INFINEON TECHNOLOGIES auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
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S25FL128SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
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S25FL256SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
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S25FL512SAGMFIR11 INFINEON TECHNOLOGIES Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
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IRF200P223 IRF200P223 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.16 EUR
14+5.38 EUR
15+5.09 EUR
Mindestbestellmenge: 10
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IRFR24N15DTRPBF IRFR24N15DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BSC030N08NS5ATMA1 BSC030N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFB8407 AUIRFB8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
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AUIRFSL8407 AUIRFSL8407 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Produkt ist nicht verfügbar
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IRF7380TRPBF IRF7380TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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AUIRFB8405 AUIRFB8405 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.09 EUR
13+5.51 EUR
Mindestbestellmenge: 12
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AUIRFB8409 AUIRFB8409 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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AUIRFSL8403 AUIRFSL8403 INFINEON TECHNOLOGIES AUIRFSL8403.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
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TD120N16SOFHPSA1 TD120N16SOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E7F003BC32469&compId=TD120N16SOF.pdf?ci_sign=0592943490bce5a241151a7a1f5755094fd7551b Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
3+32.72 EUR
10+31.83 EUR
Mindestbestellmenge: 3
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BFP650FH6327 BFP650FH6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0 Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 1473 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
218+0.33 EUR
229+0.31 EUR
240+0.3 EUR
Mindestbestellmenge: 209
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IPB016N06L3GATMA1 IPB016N06L3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CEC4B1B9C11C&compId=IPB016N06L3G-DTE.pdf?ci_sign=771cd50308087000a64d845feff9bfa9f27c355d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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SPP18P06PHXKSA1 SPP18P06PHXKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.93 EUR
Mindestbestellmenge: 37
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IR38263MTRPBFAUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D96AA8069611C&compId=BSC110N06NS3G-DTE.pdf?ci_sign=00f412b49613db1927099a64c96e7667ef282ced Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 304A
Case: PG-TDSON-8
Drain-source voltage: 150V
Drain current: 48A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC117N08NS5ATMA1 BSC117N08NS5ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 49A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC118N10NSGATMA1 BSC118N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 11.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC123N10LSGATMA1 BSC123N10LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC12DN20NS3GATMA1 BSC12DN20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 200V
Drain current: 11.3A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 BSC16DN25NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 BSC190N12NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 120V
Drain current: 44A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC196N10NSGATMA1 BSC196N10NSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 45A
On-state resistance: 19.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8 Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 INFINEON TECHNOLOGIES SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF IRL3103STRLPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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TLS115B0LDXUMA1 TLS115B0LDXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IRF6648TRPBF IRF6648TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50080-1TEA BTS50080-1TEA INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
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Lieferzeit 14-21 Tag (e)
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 INFINEON TECHNOLOGIES Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
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IPD053N06NATMA1 IPD053N06NATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 BSR316PH6327XTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
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107+0.67 EUR
169+0.42 EUR
260+0.28 EUR
275+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 107
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CY7C4041KV13-667FCXC INFINEON TECHNOLOGIES Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IDP15E65D2XKSA1 IDP15E65D2XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
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31+2.33 EUR
35+2.04 EUR
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IDP15E65D1XKSA1 IDP15E65D1XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
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ITS5215L ITS5215L INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 869 Stücke:
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22+3.3 EUR
25+2.95 EUR
32+2.26 EUR
34+2.14 EUR
250+2.07 EUR
Mindestbestellmenge: 22
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IR2011PBF IR2011PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b description Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
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IRF7420TRPBF IRF7420TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPW60R330P6FKSA1 IPW60R330P6FKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBFB08E807C143&compId=IPW60R330P6.pdf?ci_sign=8f3765fccc89d1f705e81841d8079e376b4c7e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE7250VSJXUMA1 TLE7250VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
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TLE7251VSJXUMA1 TLE7251VSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257SJXUMA1 TLE7257SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 3mA
Supply voltage: 5.5...18V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7268SKXUMA1 TLE7268SKXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463 Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7250SJXUMA1 TLE7250SJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75 Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7250XSJXUMA1 TLE7250XSJXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IDM02G120C5XTMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68FBA3490FE516FA8&compId=IDM02G120C5-DTE.pdf?ci_sign=39f02fd9a145e2170f3e498cb765e81a39c4fb99
IDM02G120C5XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-TO252-2; SiC; SMD; 1.2kV; 2A; 98W
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.4V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 31A
Leakage current: 1.2µA
Power dissipation: 98W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Case: PG-TO252-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC014N06NSATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C25F431FB8811C&compId=BSC014N06NS-DTE.pdf?ci_sign=89be9cef3c84b02cc52bd76782f1cbbbafd2f7d6
BSC014N06NSATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF6727MTRPBF pVersion=0046&contRep=ZT&docId=E21F719561A82EF1A303005056AB0C4F&compId=irf6727mpbf.pdf?ci_sign=0d47fe75e18f0aeb0e9cfe7b5a6140800bd8f964
IRF6727MTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 180A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 180A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD160N22K pVersion=0046&contRep=ZT&docId=005056AB752F1EE586C86AA869E30469&compId=DD160N22K.pdf?ci_sign=89bba5a5b6017d61df8b68446cd34101842b194f
DD160N22K
Hersteller: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 160A; BG-PB34-1; screw
Case: BG-PB34-1
Max. off-state voltage: 2.2kV
Max. forward voltage: 1.4V
Load current: 160A
Semiconductor structure: double series
Max. forward impulse current: 4.6kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+209.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BAT5402VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0EDC5C0EE5B1820&compId=Infineon-BAT54SERIES-DS-v01_01-en.pdf?ci_sign=9d415fac4e4038a2e5066020b8f03e621cda1497 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589E0035FBA164469&compId=BAT5404E6327HTSA1.pdf?ci_sign=59c3f9435ae2eef0d74f82fc49616073dce28d16
BAT5402VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky rectifying
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
auf Bestellung 8980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
295+0.24 EUR
410+0.17 EUR
538+0.13 EUR
611+0.12 EUR
1214+0.059 EUR
1283+0.056 EUR
3000+0.054 EUR
Mindestbestellmenge: 295
Im Einkaufswagen  Stück im Wert von  UAH
BAS7002VH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE589DFD0CECB95E469&compId=BAS7004E6327HTSA1.pdf?ci_sign=ff2c882736c2865056ef199c5df8e8b8e4521bb0
BAS7002VH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Power dissipation: 0.25W
Max. forward impulse current: 0.1A
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
218+0.33 EUR
353+0.2 EUR
463+0.15 EUR
516+0.14 EUR
794+0.09 EUR
848+0.084 EUR
Mindestbestellmenge: 218
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IPW60R045CPFKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594E4C7AF9B31BF&compId=IPW60R045CP-DTE.pdf?ci_sign=5e3f47fef8e1cb1491e58f40da372d83d84901cd
IPW60R045CPFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 431W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 431W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPZ60R040C7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B59552626D78D1BF&compId=IPZ60R040C7-DTE.pdf?ci_sign=1d1709cb23ef90f3adae91e68c26105e3f8c2550
IPZ60R040C7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-4
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: CoolMOS™ C7
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.25 EUR
5+17.26 EUR
10+17.12 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFR8405TRL auirfr8405.pdf?fileId=5546d462533600a4015355b6216514a5
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 804A; 163W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Power dissipation: 163W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 1.98mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Pulsed drain current: 804A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL128SAGMFIR11 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 128Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL256SAGMFIR11 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 256Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S25FL512SAGMFIR11 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating frequency: 133MHz
Kind of interface: serial
Memory: 512Mb FLASH
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Type of integrated circuit: FLASH memory
Interface: QUAD SPI
Kind of memory: NOR Flash
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF200P223 pVersion=0046&contRep=ZT&docId=005056AB752F1ED885C5C60D032C6A18&compId=IRF200P223.pdf?ci_sign=e6665466486189b4a31e5651bceddce5d8357e7a
IRF200P223
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 200V; 71A; 313W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 71A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 102nC
Technology: StrongIRFET™
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.16 EUR
14+5.38 EUR
15+5.09 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IRFR24N15DTRPBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDCEF7D18E015EA&compId=IRFR24N15DTRPBF.pdf?ci_sign=ea45edf9f549a5715b095bc03e8c0b797eaf525c
IRFR24N15DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC030N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2A1DE2482E11C&compId=BSC030N08NS5-DTE.pdf?ci_sign=e2923a653bbc49ae9f0a658a51ab2dbc6a80e934
BSC030N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBEF63752B5EA&compId=AUIRFB8407.pdf?ci_sign=77c7432b80b269846f5e47385d4aa9b20e3cd3ad
AUIRFB8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO220AB
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220AB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL8407 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBE382C02195EA&compId=AUIRFSL8407.pdf?ci_sign=4c0550a9897f895e27738a49f082a991e26f4267
AUIRFSL8407
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 230W; TO262
Drain-source voltage: 40V
Drain current: 180A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 230W
Polarisation: unipolar
Gate charge: 150nC
Technology: HEXFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO262
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF7380TRPBF pVersion=0046&contRep=ZT&docId=E221A1416FA3A7F1A303005056AB0C4F&compId=irf7380pbf.pdf?ci_sign=43b47160500444f3ece01f173324f425d2669bea
IRF7380TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8
Type of transistor: N-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8405 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBBC936327F5EA&compId=AUIRFB8405.pdf?ci_sign=7b480d6d4381ed9eff5cd4a93dd04a3a2f195ed0
AUIRFB8405
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 163W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 163W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.09 EUR
13+5.51 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFB8409 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBC0B3419C15EA&compId=AUIRFB8409.pdf?ci_sign=7f12e48652dc15e699fd5e099a6f836db55a2bbf
AUIRFB8409
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 195A; 375W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 195A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.2mΩ
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AUIRFSL8403 AUIRFSL8403.pdf
AUIRFSL8403
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 87A; 99W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 87A
Power dissipation: 99W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD120N16SOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5859E7F003BC32469&compId=TD120N16SOF.pdf?ci_sign=0592943490bce5a241151a7a1f5755094fd7551b
TD120N16SOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 120A; BG-SB20-1; Ufmax: 1.75V
Case: BG-SB20-1
Max. off-state voltage: 1.6kV
Max. load current: 190A
Max. forward voltage: 1.75V
Load current: 120A
Semiconductor structure: double series
Gate current: 100mA
Max. forward impulse current: 2.25kA
Electrical mounting: screw
Mechanical mounting: screw
Type of semiconductor module: diode-thyristor
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+32.72 EUR
10+31.83 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
BFP650FH6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A191E1A19995E11C&compId=BFP650FH6327-dte.pdf?ci_sign=96a77ad04f5d9683c812535acb39daba6b15d6a0
BFP650FH6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 13V; 0.15A; 0.5W; TSFP-4
Mounting: SMD
Case: TSFP-4
Kind of package: reel; tape
Kind of transistor: RF
Frequency: 42GHz
Collector-emitter voltage: 13V
Collector current: 0.15A
Type of transistor: NPN
Power dissipation: 0.5W
Polarisation: bipolar
Technology: SiGe:C
auf Bestellung 1473 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
218+0.33 EUR
229+0.31 EUR
240+0.3 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
IPB016N06L3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A0F5CEC4B1B9C11C&compId=IPB016N06L3G-DTE.pdf?ci_sign=771cd50308087000a64d845feff9bfa9f27c355d
IPB016N06L3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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SPP18P06PHXKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA92E1526F3291CC&compId=SPP18P06PHXKSA1-DTE.pdf?ci_sign=31d8bff6b49e66865ad7bc0fc966b6524742fb2f
SPP18P06PHXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
Power dissipation: 81.1W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: SIPMOS™
auf Bestellung 37 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
37+1.93 EUR
Mindestbestellmenge: 37
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IR38263MTRPBFAUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE8959CE379BD04F3D5&compId=IR38263M.pdf?ci_sign=f4a4112111a3d25c5f97e732653620611218005c
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; POL converter; Uin: 5.3÷16VDC; Uout: 0.5÷14VDC; PQFN5X7
Operating temperature: -40...125°C
Case: PQFN5X7
DC supply current: 50mA
Supply voltage: 4.5...5.5V
Frequency: 0.15...1.5MHz
Output voltage: 0.5...14V DC
Output current: 30A
Type of integrated circuit: PMIC
Interface: PMBus; PVID
Number of channels: 1
Input voltage: 5.3...16V DC
Kind of package: reel; tape
Kind of integrated circuit: POL converter
Topology: buck
Mounting: SMD
Produkt ist nicht verfügbar
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BSC110N06NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D96AA8069611C&compId=BSC110N06NS3G-DTE.pdf?ci_sign=00f412b49613db1927099a64c96e7667ef282ced
BSC110N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 60V
Drain current: 50A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC110N15NS5ATMA1 Infineon-BSC110N15NS5-DS-v02_01-EN.pdf?fileId=5546d46253f650570154a04caaad551a
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 48A; Idm: 304A; 125W
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 304A
Case: PG-TDSON-8
Drain-source voltage: 150V
Drain current: 48A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC117N08NS5ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9A69886D211C&compId=BSC117N08NS5-DTE.pdf?ci_sign=23efda944c0554f017e600157a0f280e1d331efa
BSC117N08NS5ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 5
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 80V
Drain current: 49A
On-state resistance: 11.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC118N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38D9DCDB846011C&compId=BSC118N10NSG-DTE.pdf?ci_sign=677f6c93c2498a7ba9596957c0f0ef730c263662
BSC118N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 11.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC123N10LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DA96CD3C5811C&compId=BSC123N10LSG-DTE.pdf?ci_sign=502e468ba211a3d90ef62890cb82e0b16657e541
BSC123N10LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Power dissipation: 114W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 71A
On-state resistance: 12.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC12DN20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6CDBBD7E411C&compId=BSC12DN20NS3G-DTE.pdf?ci_sign=a25373e9ee75a46b52f6339ff91ce7cebfbad060
BSC12DN20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Power dissipation: 50W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 200V
Drain current: 11.3A
On-state resistance: 0.125Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC16DN25NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC6DE8A553411C&compId=BSC16DN25NS3G-DTE.pdf?ci_sign=da8a4c7c5c75536fe143cf3873658d8ba84f863b
BSC16DN25NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Mounting: SMD
Power dissipation: 62.5W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC190N12NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC63B17224A11C&compId=BSC190N12NS3G-DTE.pdf?ci_sign=350ea8f47ffd494294b14350634a85a9fee75355
BSC190N12NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Power dissipation: 69W
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 120V
Drain current: 44A
On-state resistance: 19mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC196N10NSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38DB2068F3D811C&compId=BSC196N10NSG-DTE.pdf?ci_sign=da8b6e507176b595fdb7cb5dc1e045ec2ef98bb3
BSC196N10NSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™ 2
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 45A
On-state resistance: 19.6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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FP10R12W1T7B11BOMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D84C0AEB33F8BF&compId=FP10R12W1T7B11.pdf?ci_sign=f22158e9fd40755a352e4e202ff2f4db12e763f8
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; three-phase diode bridge; Ic: 10A
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: EasyPIM™ 1B
Topology: IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Case: AG-EASY1B-2
Produkt ist nicht verfügbar
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SPD03N60C3ATMA1 SPD03N60C3_rev+2+6.pdf?fileId=db3a3043191a246301192907f3b27f4b
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 9.6A; 38W; PG-TO252
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Pulsed drain current: 9.6A
Power dissipation: 38W
Case: PG-TO252
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRL3103STRLPBF pVersion=0046&contRep=ZT&docId=E22273FCEE86BBF1A303005056AB0C4F&compId=irl3103spbf.pdf?ci_sign=d3447635fefbe0b4d19b7a54228f1edac8d3a79e
IRL3103STRLPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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XMC4700E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4700E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4700
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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XMC4800E196F1536AAXQMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2183DDA5EEFA8&compId=XMC4700-4800-DTE.pdf?ci_sign=ee0b2cda1a283a5cda4f3ba26c587e77723a3a0a
XMC4800E196F1536AAXQMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LFBGA-196
Memory: 276kB SRAM; 1.5MB FLASH
Number of inputs/outputs: 155
Supply voltage: 3.3V DC
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
Number of A/D channels: 26
Kind of architecture: Cortex M4
Family: XMC4800
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLS115B0LDXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE89BADAE85089093D7&compId=TLS115B0.pdf?ci_sign=c0954877c01959537d5d1b55d069f99ae4a2cf48
TLS115B0LDXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 2÷14V; 0.15A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.25V
Output voltage: 2...14V
Output current: 0.15A
Case: PG-TSON-10
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±0.1%
Input voltage: 4...45V
Produkt ist nicht verfügbar
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IRF6648TRPBF pVersion=0046&contRep=ZT&docId=E21F6D8D82FF2CF1A303005056AB0C4F&compId=irf6648pbf.pdf?ci_sign=09bf340e62947621a3eb9a51d35afb4ae0b9c410
IRF6648TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 86A
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 89W
Technology: HEXFET®
Produkt ist nicht verfügbar
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BTS50080-1TEA pVersion=0046&contRep=ZT&docId=005056AB752F1EE78FF530CCC8920745&compId=BTS500801TEA.pdf?ci_sign=8180324bf2579b770ec16da1ab15a35b2d277daf
BTS50080-1TEA
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 10A; Ch: 1; N-Channel; SMD
Case: PG-TO252-5-11
Supply voltage: 5.5...30V DC
On-state resistance: 16mΩ
Output voltage: 39V
Output current: 10A
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Technology: High Current PROFET
Kind of integrated circuit: high-side
Mounting: SMD
auf Bestellung 1655 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.98 EUR
32+2.26 EUR
34+2.13 EUR
Mindestbestellmenge: 15
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BTS500251TEAAUMA1 Infineon-BTS50025-1TEA-DS-V01_00-EN-DataSheet-v01_00-EN.pdf?fileId=5546d4626cb27db2016d4322f14b7d2a
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 24A; Ch: 1; N-Channel; SMD; -40÷150°C
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 24A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO252-5-11
On-state resistance: 5mΩ
Supply voltage: 5.8...18V DC
Technology: High Current PROFET
Operating temperature: -40...150°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD053N06NATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A698E669ECC2211C&compId=IPD053N06N-DTE.pdf?ci_sign=c387f26976ad22f24751fba530dfc2fd71aed62d
IPD053N06NATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 45A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSR316PH6327XTSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE78EDFB0E568564745&compId=BSR316PH6327XTSA1.pdf?ci_sign=00502fbe6cd0200668e7560cc4589d7a1438ad5e
BSR316PH6327XTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Polarisation: unipolar
Technology: SIPMOS™
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: SC59
Drain-source voltage: -100V
Drain current: -0.29A
On-state resistance: 2.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.5W
auf Bestellung 1178 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
169+0.42 EUR
260+0.28 EUR
275+0.26 EUR
1000+0.25 EUR
Mindestbestellmenge: 107
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CY7C4041KV13-667FCXC Infineon-CY7C4021KV13_CY7C4041KV13_72-Mbit_QDR-IV_HP_SRAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4cc743a40
Hersteller: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FCBGA361; parallel; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Case: FCBGA361
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray
Supply voltage: 1.3V DC
Frequency: 667MHz
Produkt ist nicht verfügbar
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IDP15E65D2XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6FF3B73774469&compId=IDP15E65D2.pdf?ci_sign=8b2271511ce4ce182f4702d6d46a9fe652cd5d1d
IDP15E65D2XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.04 EUR
Mindestbestellmenge: 31
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IDP15E65D1XKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6F60C962A4469&compId=IDP15E65D1.pdf?ci_sign=ab03c6d2d221d5cc668abe5e29a23765e6141f60
IDP15E65D1XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 15A; tube; TO220-2
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Type of diode: rectifying
Features of semiconductor devices: fast switching
Mounting: THT
Case: TO220-2
Max. off-state voltage: 650V
Produkt ist nicht verfügbar
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ITS5215L pVersion=0046&contRep=ZT&docId=005056AB752F1EE58698B3D160A98469&compId=ITS5215L.pdf?ci_sign=c29e04078cac09645894d0116ce0724b692e413a
ITS5215L
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3.7A; Ch: 2; N-Channel; SMD; BSOP12
Case: BSOP12
Mounting: SMD
On-state resistance: 70mΩ
Output current: 3.7A
Type of integrated circuit: power switch
Number of channels: 2
Kind of output: N-Channel
Technology: Industrial PROFET
Kind of integrated circuit: high-side
Supply voltage: 5.5...40V DC
auf Bestellung 869 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.3 EUR
25+2.95 EUR
32+2.26 EUR
34+2.14 EUR
250+2.07 EUR
Mindestbestellmenge: 22
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IR2011PBF description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FDBFA6A1F3A75EA&compId=IR2011SPBF.pdf?ci_sign=e00761d8966cabb8635a24bc3b6e98b6b2e00d6b
IR2011PBF
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; DIP8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: DIP8
Output current: -1...1A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 200V
Turn-on time: 80ns
Turn-off time: 60ns
Produkt ist nicht verfügbar
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IRF7420TRPBF pVersion=0046&contRep=ZT&docId=E221A2D620B293F1A303005056AB0C4F&compId=irf7420pbf.pdf?ci_sign=6253395e5caaefe09fbe324a35a465519a31e9a5
IRF7420TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -11.5A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -11.5A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW60R330P6FKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBBFB08E807C143&compId=IPW60R330P6.pdf?ci_sign=8f3765fccc89d1f705e81841d8079e376b4c7e3a
IPW60R330P6FKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.6A; 93W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.6A
Power dissipation: 93W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.33Ω
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BSZ123N08NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E449F0943811C&compId=BSZ123N08NS3G-DTE.pdf?ci_sign=3c3f5976f273d1c142310ae9d70a9357326ae452
BSZ123N08NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TLE7250VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE6173550792259&compId=TLE7250V.pdf?ci_sign=5318c72f3b3a8a32a168011b3ffa7f06c26ac0aa
TLE7250VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7251VSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE5C83B113AA259&compId=TLE7251V.pdf?ci_sign=6c135a20cec3e8d56ad544eb4ddfc054300b9a72
TLE7251VSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 3÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 3...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7257SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEC2E1B1C506EA14&compId=TLE7257.pdf?ci_sign=2ddfec743c1f2fd230310522ebad0f66ab6ceb81
TLE7257SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷18VDC; LIN; SMD; PG-DSO-8
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 3mA
Supply voltage: 5.5...18V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TLE7268SKXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98AF19CD8C10758BF&compId=TLE7268LCXUMA1.pdf?ci_sign=6d41f142a59becd130305d8dd83663fed4a0f463
TLE7268SKXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 5.5÷40VDC; LIN; SMD; PG-DSO-14
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-14
Supply voltage: 5.5...40V DC
Mounting: SMD
Interface: LIN
Kind of package: reel; tape
Number of receivers: 2
Number of transmitters: 2
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
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TLE7250SJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE60134B0678259&compId=TLE7250.pdf?ci_sign=f59479f7b4ec512bd12903b7d6900dfed7d45d75
TLE7250SJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE7250XSJXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE628A2EAFB8259&compId=TLE7250X.pdf?ci_sign=006d109d5c4db5292b80916d7b6e35b9099f9c8a
TLE7250XSJXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; PG-DSO-8; -40÷150°C; 60mA
Type of integrated circuit: interface
Operating temperature: -40...150°C
Case: PG-DSO-8
DC supply current: 60mA
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Interface: CAN
Kind of package: reel; tape
Number of receivers: 1
Number of transmitters: 1
Kind of integrated circuit: transceiver
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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