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BCW60BE6327 BCW60BE6327 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
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1301+0.054 EUR
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1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Case: PG-DSO-8
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IPB042N10N3GATMA1 IPB042N10N3GATMA1 INFINEON TECHNOLOGIES IPB042N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
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IRFHS8342TRPBF IRFHS8342TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221BC30E9D769F1A303005056AB0C4F&compId=irfhs8342pbf.pdf?ci_sign=9841042d5a4e90aaa2733a943d1ed93cd7c4eeff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA38E1D3190C143&compId=IPB80N08S2L07.pdf?ci_sign=4b890f2806c1600f6c8c2c08ada4dbdb292ede4e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IAUA180N08S5N026AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSC076N06NS3GATMA1 BSC076N06NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38725BC2E96811C&compId=BSC076N06NS3G-DTE.pdf?ci_sign=360dd0f290089c5f67d6f09e520aad476ca8d393 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW80R280P7XKSA1 IPW80R280P7XKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBC0CC33F624143&compId=IPW80R280P7.pdf?ci_sign=1623f61fd440464f34971b01da5d47ae914d8f8a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3; ESD
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 101W
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Gate charge: 36nC
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.28Ω
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18+3.99 EUR
19+3.79 EUR
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TT251N16KOFHPSA1 TT251N16KOFHPSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081 Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 300mA
Max. forward voltage: 1.4V
Load current: 251A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
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1+264.34 EUR
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IPD30N03S4L09ATMA1 IPD30N03S4L09ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA431C5A27B2143&compId=IPD30N03S4L09.pdf?ci_sign=438adb46aa105baf766359ee5aef619066f5ec53 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 BSZ130N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E467F845CC11C&compId=BSZ130N03LSG-DTE.pdf?ci_sign=4efa016b36e3e919650f3576dd46577ae855e941 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSC030N03LSGATMA1 BSC030N03LSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2942DFAC9811C&compId=BSC030N03LSG-DTE.pdf?ci_sign=90236da1284451d503f0fed752c2e6792526b2e2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 BSC030N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C29AE622C2411C&compId=BSC030N03MSG-DTE.pdf?ci_sign=fa74a2d00c0b3ef0eae78e3feb1591dabba26cf5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPD30N03S4L14ATMA1 INFINEON TECHNOLOGIES Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; 31W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
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2500+0.34 EUR
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IPD030N03LF2SATMA1 INFINEON TECHNOLOGIES datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key Category: Transistors - Unclassified
Description: IPD030N03LF2SATMA1
auf Bestellung 2000 Stücke:
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2000+0.47 EUR
Mindestbestellmenge: 2000
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IRSM836-024MATR IRSM836-024MATR INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF14B6DE88815EA&compId=IRSM836-024MATR.pdf?ci_sign=56c083589115c54c17e0717f86f2e27acf8be7a1 Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...150°C
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Output current: 2A
Operating voltage: 11.5...18.5/8.9...200V DC
Power dissipation: 16W
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IRL1404PBF IRL1404PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E1C04E895D7D72F1A6F5005056AB5A8F&compId=irl1404.pdf?ci_sign=93d40338644bb6c430ba859cd6b8fc4be9a355bf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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FS820R08A6P2LBBPSA1 INFINEON TECHNOLOGIES Infineon-FS820R08A6P2LB-DataSheet-v03_03-EN.pdf?fileId=5546d4625fe36784015fe7bf83492945 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 450A
Case: AG-HYBRIDD-1
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.64kA
Power dissipation: 714W
Technology: HybridPACK™
Mechanical mounting: screw
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ITS4130QEPDXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D5E9F66F7C58BF&compId=ITS4130QEPD.pdf?ci_sign=70d93ca68b1f3a080aee042becae6f9c3ebb1475 Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Kind of output: N-Channel
Case: PG-TSDSO-14
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 75µs
Turn-off time: 75µs
On-state resistance: 0.13Ω
Output current: 1.25A
Power dissipation: 1.8W
Number of channels: 4
Supply voltage: 5...45V DC
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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CY8C4024AZI-S413 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 250 Stücke:
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250+2.93 EUR
Mindestbestellmenge: 250
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CY8C4024LQI-S413T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
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CY8C4025AZI-S413 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
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CY8C4025AZQ-S413 INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_%28PSoC_%29-DataSheet-v16_00-EN.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 24MHz; LQFP48; Features: PoR; Core: 32-bit
Operating temperature: -40...105°C
Kind of architecture: Cortex M0+
Case: LQFP48
Mounting: SMD
Number of 16bit timers: 5
Number of inputs/outputs: 36
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Integrated circuit features: PoR
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250+1.44 EUR
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CY8C4025LQI-S413T INFINEON TECHNOLOGIES Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1 Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
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2500+3.09 EUR
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CY8C4125AZI-S413 INFINEON TECHNOLOGIES Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Infineon Technologies microcontrollers
Description: CY8C4125AZI-S413
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250+3.52 EUR
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CY8C4745AZI-S413 INFINEON TECHNOLOGIES download Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
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250+5.46 EUR
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC66C4BACBC11C&compId=BSC320N20NS3G-DTE.pdf?ci_sign=e94621bff73781cfbc11529d93a3f916a241adb4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPA320N20NM3SXKSA1 IPA320N20NM3SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 19A
Power dissipation: 38W
Pulsed drain current: 104A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
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IPI320N20N3GAKSA1 IPI320N20N3GAKSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
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BSC220N20NSFDATMA1 INFINEON TECHNOLOGIES BSC220N20NSFD_Rev2.0_2018-03-14.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
5000+3.75 EUR
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; DPAK; SMT
Case: DPAK
Mounting: SMD
Electrical mounting: SMT
Gate-source voltage: 20V
Gate charge: 29nC
On-state resistance: 27mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273 Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26 Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 5.8nC
Gate current: 20mA
On-state resistance: 70mΩ
Drain current: 31A
Pulsed drain current: 60A
Power dissipation: 125W
Drain-source voltage: 600V
Technology: CoolGaN™
Case: PG-HSOF-8-3
Kind of channel: enhancement
Kind of transistor: HEMT
Type of transistor: N-JFET
Produkt ist nicht verfügbar
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S25FL127SABMFB101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
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IPB108N15N3GATMA1 IPB108N15N3GATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC56AD8CC011C&compId=IPB108N15N3G-DTE.pdf?ci_sign=d73f39379b977e903d1a504cdde47a4b8f120224 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ITS711L1 ITS711L1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.16 EUR
14+5.31 EUR
50+4.56 EUR
100+4.26 EUR
250+3.88 EUR
Mindestbestellmenge: 10
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BSP77E6433 BSP77E6433 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79 Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2693 Stücke:
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24+2.99 EUR
37+1.94 EUR
42+1.73 EUR
100+1.46 EUR
250+1.29 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 24
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IPA60R280P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2000 Stücke:
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100+0.81 EUR
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IPA60R600P7SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Mounting: THT
Gate charge: 9nC
On-state resistance: 0.49Ω
Drain current: 6A
Power dissipation: 21W
Gate-source voltage: 20V
Drain-source voltage: 600V
Technology: MOSFET
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.42 EUR
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IPA90R500C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 50 Stücke:
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50+2.43 EUR
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IPA60R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.41 EUR
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IPA65R150CFDXKSA2 INFINEON TECHNOLOGIES Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 500 Stücke:
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50+2.99 EUR
200+2.69 EUR
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IPA65R400CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
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100+0.97 EUR
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IPA65R1K0CEXKSA1 INFINEON TECHNOLOGIES Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
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150+0.69 EUR
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IRS2308STRPBF INFINEON TECHNOLOGIES irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 10000 Stücke:
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2500+0.82 EUR
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ICE5AR0680AGXUMA1 ICE5AR0680AGXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5 Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Power: 68/40/42W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: PG-DSO-12
Topology: flyback
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SPD02N80C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
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2500+0.62 EUR
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IRFH5250DTRPBF IRFH5250DTRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFH5250TRPBF IRFH5250TRPBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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BTS71202EPAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531EE995D90B21488B38BF&compId=BTS71202EPA.pdf?ci_sign=1b14f49e1402ea6dfc2869df72244d3b06478d1c Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Mounting: SMD
Case: PG-TSDSO-14
Kind of package: reel; tape
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.11Ω
Number of channels: 2
Output current: 2A
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
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IPD50P04P413ATMA1 INFINEON TECHNOLOGIES Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Mounting: SMD
Technology: OptiMOS® -P2
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
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IPD50P04P413ATMA2 INFINEON TECHNOLOGIES Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 40V; 50A; 58W; DPAK; automotive industry
Technology: MOSFET
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: P
Drain current: 50A
Drain-source voltage: 40V
Gate charge: 39nC
On-state resistance: 9.2mΩ
Gate-source voltage: 20V
Power dissipation: 58W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
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2500+0.68 EUR
Mindestbestellmenge: 2500
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BAT1804E6327HTSA1 BAT1804E6327HTSA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB82531ED998A28F9F4B06F820&compId=BAT18.pdf?ci_sign=f4209ec2ed08fe629ebf970273ae2dbbb7d43482 Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 5975 Stücke:
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103+0.7 EUR
145+0.49 EUR
178+0.4 EUR
247+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
3000+0.16 EUR
Mindestbestellmenge: 103
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IRFU4510PBF IRFU4510PBF INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 458 Stücke:
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31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
Mindestbestellmenge: 31
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IRF9393TRPBF IRF9393TRPBF INFINEON TECHNOLOGIES irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 461 Stücke:
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91+0.79 EUR
125+0.57 EUR
176+0.41 EUR
204+0.35 EUR
250+0.3 EUR
Mindestbestellmenge: 91
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XMC1402F064X0200AAXUMA1 XMC1402F064X0200AAXUMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
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IPB60R125C6ATMA1 IPB60R125C6ATMA1 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BCW60BE6327 pVersion=0046&contRep=ZT&docId=005056AB752F1EE587C5401881EE2469&compId=BCW60.pdf?ci_sign=d99b80daca59c88194d51478d004c1281c00cc49
BCW60BE6327
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 1301 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1301+0.054 EUR
Mindestbestellmenge: 1301
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1EDC40I12AHXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE896B62E86916C33D6&compId=1EDCxxX12AH.pdf?ci_sign=da6f019cc801fa37109c75303e594cae5bfb0871
1EDC40I12AHXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Technology: EiceDRIVER™
Mounting: SMD
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Kind of package: reel; tape
Topology: single transistor
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
Case: PG-DSO-8
Produkt ist nicht verfügbar
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IPB042N10N3GATMA1 IPB042N10N3G-DTE.pdf
IPB042N10N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFHS8342TRPBF pVersion=0046&contRep=ZT&docId=E221BC30E9D769F1A303005056AB0C4F&compId=irfhs8342pbf.pdf?ci_sign=9841042d5a4e90aaa2733a943d1ed93cd7c4eeff
IRFHS8342TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 9.9A; 2.1W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 9.9A
Power dissipation: 2.1W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPB80N08S2L07ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA38E1D3190C143&compId=IPB80N08S2L07.pdf?ci_sign=4b890f2806c1600f6c8c2c08ada4dbdb292ede4e
IPB80N08S2L07ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
Produkt ist nicht verfügbar
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IAUA180N08S5N026AUMA1 Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
Produkt ist nicht verfügbar
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BSC076N06NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38725BC2E96811C&compId=BSC076N06NS3G-DTE.pdf?ci_sign=360dd0f290089c5f67d6f09e520aad476ca8d393
BSC076N06NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPW80R280P7XKSA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EBC0CC33F624143&compId=IPW80R280P7.pdf?ci_sign=1623f61fd440464f34971b01da5d47ae914d8f8a
IPW80R280P7XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10.6A; 101W; PG-TO247-3; ESD
Mounting: THT
Case: PG-TO247-3
Type of transistor: N-MOSFET
Version: ESD
Kind of channel: enhancement
Drain current: 10.6A
Gate-source voltage: ±20V
Power dissipation: 101W
Technology: CoolMOS™ P7
Drain-source voltage: 800V
Gate charge: 36nC
Polarisation: unipolar
Kind of package: tube
On-state resistance: 0.28Ω
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+3.99 EUR
19+3.79 EUR
Mindestbestellmenge: 18
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TT251N16KOFHPSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE585CE787EB8C9E469&compId=TT251N18KOF.pdf?ci_sign=3a12e8551cff06ea6af1b7da4fcd294bd77f4081
TT251N16KOFHPSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 251A; BG-PB50-1; screw
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 300mA
Max. forward voltage: 1.4V
Load current: 251A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 9.1kA
Case: BG-PB50-1
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+264.34 EUR
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IPD30N03S4L09ATMA1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED89EA431C5A27B2143&compId=IPD30N03S4L09.pdf?ci_sign=438adb46aa105baf766359ee5aef619066f5ec53
IPD30N03S4L09ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 30V; 30A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 42W
Case: PG-TO252-3
Gate-source voltage: ±16V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 15nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
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BSZ130N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E467F845CC11C&compId=BSZ130N03LSG-DTE.pdf?ci_sign=4efa016b36e3e919650f3576dd46577ae855e941
BSZ130N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03LSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C2942DFAC9811C&compId=BSC030N03LSG-DTE.pdf?ci_sign=90236da1284451d503f0fed752c2e6792526b2e2
BSC030N03LSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 98A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 98A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSC030N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A2C29AE622C2411C&compId=BSC030N03MSG-DTE.pdf?ci_sign=fa74a2d00c0b3ef0eae78e3feb1591dabba26cf5
BSC030N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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BSZ130N03MSGATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A38E48AE7C69A11C&compId=BSZ130N03MSG-DTE.pdf?ci_sign=f9ca3856ae6190f72d64bb628930d1076a5f9175
BSZ130N03MSGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31A; 25W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31A
Power dissipation: 25W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 11.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Produkt ist nicht verfügbar
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IPD30N03S4L14ATMA1 Infineon-IPD30N03S4L_14-DS-v02_01-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b426f9b13b2c&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 30V; 30A; 31W; DPAK; automotive industry
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 30V
Drain current: 30A
Power dissipation: 31W
Case: DPAK
Gate-source voltage: 16V
On-state resistance: 11.2mΩ
Mounting: SMD
Gate charge: 14nC
Kind of channel: enhancement
Electrical mounting: SMT
Application: automotive industry
Technology: MOSFET
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
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IPD030N03LF2SATMA1 datasheet?p=RFNL20TJ6SFHG&dist=Digi-Key&media=referral&source=digi-key.com&campaign=Digi-Key
Hersteller: INFINEON TECHNOLOGIES
Category: Transistors - Unclassified
Description: IPD030N03LF2SATMA1
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2000+0.47 EUR
Mindestbestellmenge: 2000
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IRSM836-024MATR pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF14B6DE88815EA&compId=IRSM836-024MATR.pdf?ci_sign=56c083589115c54c17e0717f86f2e27acf8be7a1
IRSM836-024MATR
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; iMOTION™; PQFN12X12; 2A
Type of integrated circuit: driver
Topology: MOSFET three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Case: PQFN12X12
Integrated circuit features: charge pump; dead time; fault detection; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...150°C
Protection: anti-overload OPP; undervoltage UVP
Technology: iMOTION™
Output current: 2A
Operating voltage: 11.5...18.5/8.9...200V DC
Power dissipation: 16W
Produkt ist nicht verfügbar
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IRL1404PBF pVersion=0046&contRep=ZT&docId=E1C04E895D7D72F1A6F5005056AB5A8F&compId=irl1404.pdf?ci_sign=93d40338644bb6c430ba859cd6b8fc4be9a355bf
IRL1404PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 93.3nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
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FS820R08A6P2LBBPSA1 Infineon-FS820R08A6P2LB-DataSheet-v03_03-EN.pdf?fileId=5546d4625fe36784015fe7bf83492945
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; 714W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge x3; NTC thermistor
Max. off-state voltage: 750V
Collector current: 450A
Case: AG-HYBRIDD-1
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 1.64kA
Power dissipation: 714W
Technology: HybridPACK™
Mechanical mounting: screw
Produkt ist nicht verfügbar
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ITS4130QEPDXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D5E9F66F7C58BF&compId=ITS4130QEPD.pdf?ci_sign=70d93ca68b1f3a080aee042becae6f9c3ebb1475
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.25A; Ch: 4; N-Channel; SMD; reel,tape
Kind of output: N-Channel
Case: PG-TSDSO-14
Type of integrated circuit: power switch
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...150°C
Turn-on time: 75µs
Turn-off time: 75µs
On-state resistance: 0.13Ω
Output current: 1.25A
Power dissipation: 1.8W
Number of channels: 4
Supply voltage: 5...45V DC
Kind of integrated circuit: high-side
Technology: Industrial PROFET
Produkt ist nicht verfügbar
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CY8C4024AZI-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+2.93 EUR
Mindestbestellmenge: 250
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CY8C4024LQI-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 30000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+2.47 EUR
Mindestbestellmenge: 2500
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CY8C4025AZI-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; Core: 32-bit
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 46500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+3.19 EUR
Mindestbestellmenge: 250
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CY8C4025AZQ-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_%28PSoC_%29-DataSheet-v16_00-EN.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; 24MHz; LQFP48; Features: PoR; Core: 32-bit
Operating temperature: -40...105°C
Kind of architecture: Cortex M0+
Case: LQFP48
Mounting: SMD
Number of 16bit timers: 5
Number of inputs/outputs: 36
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
Integrated circuit features: PoR
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+1.44 EUR
Mindestbestellmenge: 250
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CY8C4025LQI-S413T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller
auf Bestellung 62500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+3.09 EUR
Mindestbestellmenge: 2500
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CY8C4125AZI-S413 Infineon-PSOC_4_PSOC_4100S_DATASHEET_PROGRAMMABLE_SYSTEM-ON-CHIP_(PSOC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda5fc45c69&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: CY8C4125AZI-S413
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+3.52 EUR
Mindestbestellmenge: 250
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CY8C4745AZI-S413 download
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; Core: 32-bit
Mounting: SMD
Clock frequency: 48MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+5.46 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
BSC320N20NS3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC66C4BACBC11C&compId=BSC320N20NS3G-DTE.pdf?ci_sign=e94621bff73781cfbc11529d93a3f916a241adb4
BSC320N20NS3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Case: PG-TDSON-8
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 36A
Power dissipation: 125W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPA320N20NM3SXKSA1 Infineon-IPA320N20NM3S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5d1035e86e3a
IPA320N20NM3SXKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; Idm: 104A; 38W; TO220FP
Case: TO220FP
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 19A
Power dissipation: 38W
Pulsed drain current: 104A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPB320N20N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBBF0FB2C1C11C&compId=IPB320N20N3G-DTE.pdf?ci_sign=63968efc315030711006a495abbba2f99ce658c8
IPB320N20N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Case: PG-TO263-3
Mounting: SMD
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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IPI320N20N3GAKSA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BC2B3EB5CC011C&compId=IPI320N20N3G-DTE.pdf?ci_sign=e0d429a5c98a4128004ad9b804e367269248b1b5
IPI320N20N3GAKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO262-3
Case: PG-TO262-3
Mounting: THT
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: OptiMOS™ 3
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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BSC220N20NSFDATMA1 BSC220N20NSFD_Rev2.0_2018-03-14.pdf
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5000+3.75 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; DPAK; SMT
Case: DPAK
Mounting: SMD
Electrical mounting: SMT
Gate-source voltage: 20V
Gate charge: 29nC
On-state resistance: 27mΩ
Drain current: 34A
Power dissipation: 136W
Drain-source voltage: 200V
Kind of channel: enhancement
Technology: MOSFET
Polarisation: N
Type of transistor: N-MOSFET
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+1.82 EUR
Mindestbestellmenge: 2500
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1EDI20N12AFXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BD3DFF0212378BF&compId=1EDI20N12AF.pdf?ci_sign=35d6f21bfdc47584f0a10023f30c07b34fe60273
1EDI20N12AFXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
Produkt ist nicht verfügbar
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IGOT60R070D1AUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE401B81A658BF&compId=IGOT60R070D1.pdf?ci_sign=83f481bff1714d6c3a176ec2ae803d094c7fa622
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Type of transistor: N-JFET
Technology: CoolGaN™
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 600V
Drain current: 31A
Pulsed drain current: 60A
Case: PG-DSO-20
Gate-source voltage: -10V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: tape
Kind of channel: enhancement
Gate current: 20mA
Power dissipation: 125W
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE98BBE420228EDB8BF&compId=IGT60R070D1.pdf?ci_sign=7e4b352780f0dc62839476384facd6fe5b07cb26
IGT60R070D1ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-JFET; CoolGaN™; unipolar; HEMT; 600V; 31A; Idm: 60A
Mounting: SMD
Kind of package: tape
Polarisation: unipolar
Gate-source voltage: -10V
Gate charge: 5.8nC
Gate current: 20mA
On-state resistance: 70mΩ
Drain current: 31A
Pulsed drain current: 60A
Power dissipation: 125W
Drain-source voltage: 600V
Technology: CoolGaN™
Case: PG-HSOF-8-3
Kind of channel: enhancement
Kind of transistor: HEMT
Type of transistor: N-JFET
Produkt ist nicht verfügbar
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S25FL127SABMFB101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; SOIC8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: QUAD SPI
Operating frequency: 108MHz
Operating voltage: 2.7...3.6V
Case: SOIC8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: tube
Application: automotive
Produkt ist nicht verfügbar
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IPB108N15N3GATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5A4BBC56AD8CC011C&compId=IPB108N15N3G-DTE.pdf?ci_sign=d73f39379b977e903d1a504cdde47a4b8f120224
IPB108N15N3GATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 83A; 214W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 83A
Power dissipation: 214W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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ITS711L1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD6A8FB46B515EA&compId=ITS711L1.pdf?ci_sign=10b7477323f83047679ef94230d193e5429d55bb
ITS711L1
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.7A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.7A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
Supply voltage: 5...34V DC
Output voltage: 2...4V
Technology: Industrial PROFET
auf Bestellung 289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.16 EUR
14+5.31 EUR
50+4.56 EUR
100+4.26 EUR
250+3.88 EUR
Mindestbestellmenge: 10
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BSP77E6433 pVersion=0046&contRep=ZT&docId=005056AB752F1EE586975EB63FE4A469&compId=BSP77E6433.pdf?ci_sign=6239ab778401a773ab18950fa653d6f33d6eda79
BSP77E6433
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 2.17A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223-3
On-state resistance: 70mΩ
Technology: HITFET®
Output voltage: 42V
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
37+1.94 EUR
42+1.73 EUR
100+1.46 EUR
250+1.29 EUR
500+1.17 EUR
1000+1.06 EUR
Mindestbestellmenge: 24
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IPA60R280P7SXKSA1 Infineon-IPA60R280P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3c00794f033f
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 12A; 24W; TO220FP; SMT
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 12A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 214mΩ
Mounting: THT
Gate charge: 18nC
Kind of channel: enhancement
Electrical mounting: SMT
Technology: MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.81 EUR
Mindestbestellmenge: 100
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IPA60R600P7SXKSA1 Infineon-IPA60R600P7S-DS-v02_00-EN.pdf?fileId=5546d4625cc9456a015d3b403a7a02ca
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6A; 21W; TO220FP; SMT
Mounting: THT
Gate charge: 9nC
On-state resistance: 0.49Ω
Drain current: 6A
Power dissipation: 21W
Gate-source voltage: 20V
Drain-source voltage: 600V
Technology: MOSFET
Kind of channel: enhancement
Case: TO220FP
Type of transistor: N-MOSFET
Electrical mounting: SMT
auf Bestellung 1954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.42 EUR
Mindestbestellmenge: 200
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IPA90R500C3XKSA2 Infineon-IPA90R500C3-DS-v01_00-en.pdf?fileId=db3a30431b3e89eb011b8cd1d1b10fb6
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 900V; 11A; 34W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 900V
Drain current: 11A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.43 EUR
Mindestbestellmenge: 50
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IPA60R1K0CEXKSA1 Infineon-IPA60R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401537a8be0c671ef
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 600V; 6.8A; 26W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 600V
Drain current: 6.8A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 13nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.41 EUR
Mindestbestellmenge: 200
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IPA65R150CFDXKSA2 Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 650V; 22.4A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Drain-source voltage: 650V
Drain current: 22.4A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: 20V
Mounting: THT
Gate charge: 86nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+2.99 EUR
200+2.69 EUR
Mindestbestellmenge: 50
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IPA65R400CEXKSA1 Infineon-IPA65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384fc4e327493
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 15.1A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 15.1A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 39nC
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.97 EUR
Mindestbestellmenge: 100
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IPA65R1K0CEXKSA1 Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 7.2A; 68W; TO220FP
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 7.2A
Power dissipation: 68W
Case: TO220FP
Gate-source voltage: 20V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 15.3nC
Kind of channel: enhancement
Technology: MOSFET
auf Bestellung 650 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
150+0.69 EUR
Mindestbestellmenge: 150
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IRS2308STRPBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.82 EUR
Mindestbestellmenge: 2500
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ICE5AR0680AGXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED886F285348280EA18&compId=ICE5xRxxxxAG.pdf?ci_sign=9c829b5b683ea7948ea94422704a94b91a4ceeb5
ICE5AR0680AGXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 5.8A; 100kHz; Ch: 1; PG-DSO-12; flyback
Mounting: SMD
Power: 68/40/42W
Operating temperature: -40...140°C
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Application: SMPS
Duty cycle factor: 0...80%
Number of channels: 1
Output current: 5.8A
Operating voltage: 10...25.5V DC
Input voltage: 80...265V
Breakdown voltage: 800V
Frequency: 0.1MHz
Case: PG-DSO-12
Topology: flyback
Produkt ist nicht verfügbar
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SPD02N80C3ATMA1 Infineon-SPD02N80C3-DS-v02_92-en.pdf?fileId=db3a30433f12d084013f1430cc1b0334
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 800V; 2A; 42W; DPAK,TO252; SMT
Type of transistor: N-MOSFET
Technology: MOSFET
Polarisation: N
Drain-source voltage: 800V
Drain current: 2A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: 20V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of channel: enhancement
Electrical mounting: SMT
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.62 EUR
Mindestbestellmenge: 2500
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IRFH5250DTRPBF pVersion=0046&contRep=ZT&docId=E221B69F73CEC8F1A303005056AB0C4F&compId=irfh5250dpbf.pdf?ci_sign=67286b03f8495111b6935f0dc7a1d7f61db34ce8
IRFH5250DTRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 40A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 40A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IRFH5250TRPBF pVersion=0046&contRep=ZT&docId=E221B6BCA3E4D2F1A303005056AB0C4F&compId=irfh5250pbf.pdf?ci_sign=c6bcf5bec11fd72e95d8b9f2ed53f6c2dd09f369
IRFH5250TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 45A; 3.6W; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 45A
Power dissipation: 3.6W
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BTS71202EPAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB82531EE995D90B21488B38BF&compId=BTS71202EPA.pdf?ci_sign=1b14f49e1402ea6dfc2869df72244d3b06478d1c
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 2; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Mounting: SMD
Case: PG-TSDSO-14
Kind of package: reel; tape
Kind of output: N-Channel
Type of integrated circuit: power switch
Operating temperature: -40...150°C
On-state resistance: 0.11Ω
Number of channels: 2
Output current: 2A
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Produkt ist nicht verfügbar
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IPD50P04P413ATMA1 Infineon-IPD50P04P4_13-DS-v01_00-en.pdf?fileId=db3a30432f69f146012f781f908b2da3&ack=t
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; OptiMOS® -P2; unipolar; -40V; -45A; 58W
Type of transistor: P-MOSFET
Mounting: SMD
Technology: OptiMOS® -P2
Polarisation: unipolar
Pulsed drain current: -200A
Drain current: -45A
Drain-source voltage: -40V
On-state resistance: 12.6mΩ
Gate-source voltage: ±20V
Power dissipation: 58W
Case: PG-TO252-3-313
Kind of channel: enhancement
Produkt ist nicht verfügbar
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IPD50P04P413ATMA2 Infineon-IPD50P04P4-13-DataSheet-v01_03-EN.pdf?fileId=db3a30432f69f146012f781f908b2da3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; P; 40V; 50A; 58W; DPAK; automotive industry
Technology: MOSFET
Type of transistor: P-MOSFET
Mounting: SMD
Polarisation: P
Drain current: 50A
Drain-source voltage: 40V
Gate charge: 39nC
On-state resistance: 9.2mΩ
Gate-source voltage: 20V
Power dissipation: 58W
Application: automotive industry
Case: DPAK
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.68 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BAT1804E6327HTSA1 pVersion=0046&contRep=ZT&docId=005056AB82531ED998A28F9F4B06F820&compId=BAT18.pdf?ci_sign=f4209ec2ed08fe629ebf970273ae2dbbb7d43482
BAT1804E6327HTSA1
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 35V; 100mA; SOT23; double series; Ufmax: 1.2V
Max. off-state voltage: 35V
Load current: 0.1A
Case: SOT23
Kind of package: reel; tape
Max. forward voltage: 1.2V
Semiconductor structure: double series
Features of semiconductor devices: PIN; RF
Mounting: SMD
Type of diode: switching
auf Bestellung 5975 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
145+0.49 EUR
178+0.4 EUR
247+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
3000+0.16 EUR
Mindestbestellmenge: 103
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IRFU4510PBF pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FEF8E7AC53835EA&compId=IRFU4510PBF.pdf?ci_sign=52b38537d55835881e2e9ee000aff0c490a07272
IRFU4510PBF
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 63A; 143W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 63A
Case: IPAK
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Power dissipation: 143W
auf Bestellung 458 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
46+1.59 EUR
50+1.46 EUR
60+1.2 EUR
75+1.14 EUR
150+1.03 EUR
450+0.99 EUR
Mindestbestellmenge: 31
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IRF9393TRPBF irf9393pbf.pdf?fileId=5546d462533600a401535611877d1db3
IRF9393TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.3A; 1.6W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.3A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 19.4mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
125+0.57 EUR
176+0.41 EUR
204+0.35 EUR
250+0.3 EUR
Mindestbestellmenge: 91
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XMC1402F064X0200AAXUMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1EE68BC2023B1600CFA8&compId=XMC1400-DTE.pdf?ci_sign=1e39311d89feedc3199fcab34f75dde484976fcc
XMC1402F064X0200AAXUMA1
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 16kBSRAM,200kBFLASH
Type of integrated circuit: ARM microcontroller
Case: PG-LQFP-64
Memory: 16kB SRAM; 200kB FLASH
Number of inputs/outputs: 55
Number of 16bit timers: 16
Supply voltage: 1.8...5.5V DC
Interface: GPIO; USIC x4
Integrated circuit features: ACMP x4; BCCU; CCU8; EEPROM emulation; math coprocessor; POSIF; RTC; watchdog
Number of A/D channels: 12
Kind of architecture: Cortex M0
Family: XMC1400
Operating temperature: -40...105°C
Kind of core: 32-bit
Produkt ist nicht verfügbar
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IPB60R125C6ATMA1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B594126B59FFD1BF&compId=IPB60R125C6-DTE.pdf?ci_sign=81e827ead9db9d126ae967c1d00236c615806a73
IPB60R125C6ATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 219W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 219W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of channel: enhancement
Produkt ist nicht verfügbar
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